The main purpose of this research is to analyze and improve manufacturing process of chip resistor . To startup research by collecting chip resistor related thesises and patents, and as a result, discover most research paper are focused on structure and material, seldom found information related to manufacturing and process. As a matter of fact, manufacturing and process is crucial for mass production. Continued by analyzing chip resistor's structure and manufacture process, use defect sample collected from current manufacturing. Apply functional analysis to explore manufacturing system and environment. Base on analysis on functional structure and the limitation of structure, propose three ways of changing the processing sequence which provide improvement. In one case, after been trail run, it can actually reduce defect of manufacturing and speedup the operation flow. List designing and operating operable of detail stage, according to equipment jig and product dimension explore approach, choose a approach optimum what it raise efficiency and improve defect of chip resistor. Analyze resistance distribution and reliability test after test batch, confirm chip resistor¡¦s function and specification. Analyze defect rate of production ramp-up last. Result of study, provide optimum procedure could be reduce defect rate. Whole process of study, compare defect rate of current and optimum approach, optimum approach could be reduce defect rate from 8.5¢H to 1.3¢H.

The needs for obtaining quantitative plantar force information range from basic research into foot function to assisting patients in the use of prosthetic devices. This project reviews present force monitoring techniques, describes the evaluation of a Force Sensing Resistor for monitoring plantar force and proposes a low power portable plantar force monitoring system utilizing an array of force sensing resistors. / Thesis / Master of Engineering (ME)

Tese (Doutorado em Engenharia Elétrica) - Centro Universitário FEI, São Bernardo do Campo, 2016

Large conductance voltage and Ca2+ activated K+ (BK) channels control electrical excitability in many cell types. BK channels have the largest conductance (~250 pS) of all K+ selective channels. To explore whether a large entrance to the inner cavity of BK channels is required for their large conductance, I examined if changing the size of the entrance alters the single-channel current amplitude. Previous studies suggest that residues E321/E324 in BK channels are located at the entrance to the inner cavity. To test if positions 321/324 are accessible to intracellular ions, I compared single-channel outward current before and after attaching thiol reagents at E321C/E324C. Attachment of MBB and MTSET altered single-channel currents, indicating that positions 321/324 are accessible to the conduction pathway. Decreasing the size of the entrance to the inner cavity by substituting residues with larger side chains, such as tyrosine and tryptophan, at positions 321/324 decreased the conductance, whereas increasing the size of the entrance had little effect on conductance. Increasing [K+]i from 0.15 to 2.5 M negated differences in single-channel outward current associated with side chain volume. Substitutions had less effect on inward currents. Plots of conductance vs. substituted side chain volume could be approximated with a simple model for the conduction pathway described by two resistors in series, R1 and R2. R2 is a variable resistor, with the resistance proportional to the inverse of the volume of the entrance to the inner cavity not occupied by the side chains. R1 is a fixed resistor arising from the other parts of the conduction pathway including the selectivity filter. Fitting the experimental observations indicated that R1+R2 ~5.4 GΩ for glycine substitution, with an R1/R2 ratio of ~17, and an effective radius and length of the entrance to the inner cavity of ~9.0 and 5.4 Å, respectively. The volume of K+ and water were not taken into account. Taken together, the above observations suggest that a large entrance to the inner cavity is needed for the large conductance of BK channels, as my study shows that the entrance is large and that decreasing the entrance size decreases the currents.

In many Resistance-Capacitance Oscillators the oscillation amplitude is controlled by the use of a temperature-dependent resistor incorporated in the negative feedback loop. The use of thermistors and tungsten lamps is discussed and an approximate analysis is presented for the behaviour of the tungsten lamp. The result is applied in an analysis of the familiar Wien Bridge Oscillator both for the presence of a linear circuit and a cubic nonlinearity. The linear analysis leads to a highly unstable transient response which is uncommon to most oscillators. The inclusion of the slight cubic nonlinearity, however, leads to a result which is in close agreement to the observed response. / Thesis / Master of Engineering (MEngr)

Este trabalho objetivou a construção de um resistor shunt dedicado a medir correntes impulsivas com valores de 2 kA a 100 kA. Esse resistor possui características gerais similares aos resistores shunt coaxiais convencionais descritos na literatura. No entanto, ele difere dos demais já desenvolvidos, por apresentar inúmeras inovações tecnológicas. Quando comparado com um resistor shunt Haefely® padrão, apresentou excelente estabilidade em toda a faixa de freqüência requerida, até 10 MHz, bem como, excelente resposta temporal. / The aim of this work was to construct a shunt resistor to measure impulsive currents with values from 2 kA to 100 kA, with general features similar to conventional coaxial resistors as described in the literature. However, it differs from resistors already developed because it shows many offers technological innovations. When compared to a should stand Haefely® shunt resistor, it presented great stability in all required frequency band to 10 MHz, as well as excellent temporal response.

The main contents of this thesis are improving a UWB LNA, and analyze the input-matching, the noise, and the gain. First we increase the width of the input transistor, and remove source-degeneration inductor. Those ways can increase the gain and reduce the noise of the circuit. In the input matching, we use a shunt capacitor, a series inductor, and the impedance of the transistor itself to achieve high frequency matching. The lower frequency matching is achieved by negative feedback resistor. The UWB LNA dissipates 10.14 mW power and achieves input return loss (S11) below -11.5 dB, output return loss (S22) below -11.9 dB, forward gain (S21) of 14.4¡Ó0.4 dB, reverse isolation (S12) below -26.7 dB, and noise figure (NF) of 2.6~3.5 dB over the 3.1~10.6 GHz band of interest. 1-dB compression point (P1dB) of -16.8 dBm and input third-order inter-modulation point (IIP3) of -8.1 dBm are achieved at 6.85 GHz.

The main contents of this thesis are improving a UWB LNA, and analyze the input-matching, the noise, and the gain. First we use the feedback of the input transistor , and it different from the traditional source-degeneration inductor.The design can increase the gain and reduce the noise of the circuit.The second stage CS architecture designed to improve the overall gain of the circuit. Output level to use the source follower with the device even when the output matching . In the input matching,we use a shunt inductor and the impedance of the transistor itself to achieve high frequency matching. The UWB LNA dissipates 16.8 mW power and achieves input return loss (S11) -9.3 to -10 dB, output return loss (S22) -16.83 to -13 dB, forward gain (S21) 13.8 to 11.6 dB, reverse isolation (S12) below -30 dB, and noise figure (NF) of 2.38~3.31 dB over the 6~10 GHz band of interest. 1-dB compression point (P1dB) of -12.5 dBm and input third-order inter-modulation point (IIP3) of -2.5 dBm are achieved at 6 GHz.

Field emission cathodes have proven themselves to be excellent candidates for some special medical X-ray applications. Spindt cathode and CNT (carbon nanotube) based field emission cathode have been widely studied for many years. Spindt cathode has the near perfect structure, but the material property limits its applications. On the other hand, low density vertically aligned CNT array has been proved the best candidate of field emission material. Several attempts have been made to combine the advantages of the Spindt cathode and CNT array, but some most important advantages of Spindt cathode have not been successfully utilized in CNT emitter design, for example: ballast resistor, self-aligned fabrication process, sub-micron scale gate electrode, and low control voltage. In this thesis, the design, fabrication and test of CNT based field emission cathode with a novel ballast resistor and coaxial cylinder shape gate electrode is reported. A connection pad has been reported for the first time. This structure makes the ballast resistor can be utilized in a CNT field emitter array. Therefore, the uniformity and stability of field emission current is improved significantly. In addition, the stabilized emission current heated up the sample to a high temperature and changes the emission from field emission to Schottky emission regime. This is the first report of the self-heating Schottky emission from a CNT emitter array. Coaxial cylinder shape gate electrode is another important improvement in the CNT emitter design. The gate electrode adopts the self-alignment property of the Spindt cathode, and adjusted to fit the structure and synthesis process of CNT array. This new design and fabrication process has all the advantages of both the Spindt cathode and CNT emitter. In addition to the field emission cathode design, a novel PMMA (poly methyl methacrylate) based FEM (field emission microscope) is designed to evaluate the emission uniformity and capture high resolution images of the distribution of field emitted electrons. Compare to the conventional phosphor screen based FEM, the PMMA based FEM has a much higher resolution and sensitivity. Images of this new FEM have a resolution of as high as 0.34 nm and clearly show the boundary of crystal facets.

Este trabalho objetivou a construção de um resistor shunt dedicado a medir correntes impulsivas com valores de 2 kA a 100 kA. Esse resistor possui características gerais similares aos resistores shunt coaxiais convencionais descritos na literatura. No entanto, ele difere dos demais já desenvolvidos, por apresentar inúmeras inovações tecnológicas. Quando comparado com um resistor shunt Haefely® padrão, apresentou excelente estabilidade em toda a faixa de freqüência requerida, até 10 MHz, bem como, excelente resposta temporal. / The aim of this work was to construct a shunt resistor to measure impulsive currents with values from 2 kA to 100 kA, with general features similar to conventional coaxial resistors as described in the literature. However, it differs from resistors already developed because it shows many offers technological innovations. When compared to a should stand Haefely® shunt resistor, it presented great stability in all required frequency band to 10 MHz, as well as excellent temporal response.