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Two sources of reniform nematode (Rotylenchulus reniformis) resistance in two Upland cotton (Gossypium hirsutum) developed from related cotton species, BARBREN-713 (Renbarb1 and Renbarb2 genes), and the LONREN germplasm lines (Renlon gene) are available to breeders. Stunting was observed in the LONREN source of resistance, but not for BARBREN. To investigate future use of LONREN germplasm, lines were developed with different combinations of genes from both the LONREN and BARBREN-713 germplasm lines. Marker assisted selection (MAS) was conducted identify these gene combinations within breeding population 1) Renbarb1 +Renbabr2 2) Renbarb1 + Renbar2 + Renlon 3) Renbarb2 + Renlon 4) Renbarb2 5) Renbarb1 6) Renbarb1+Renlon 7) Renlon, and 8) a susceptible genotype. Two populations were identified and increased in 2015. Genotypes were inoculated with 0, 2300, or 5000 reniform nematodes. Seedlings were harvested at 90 days to collect plant measurements and RF of reniform nematodes from roots and soil. The Renbarb1 genotype was susceptible. No significant differences in genotypes were observed for root and shoot measurements, and there was no indication of stunting.

<p>Advancements on flexible radiofrequency (RF) coils have been made to accommodate a variety of body sizes with great image quality and a comfortable imaging process. RF coils are magnetic field antennas for magnetic resonance imaging (MRI) that broadcast the RF signal to the patient and receive the returning signal to affect the image quality. The conventional neck RF coil is rigid and requires the patients to be in supine position. Due to its characteristics, the patients who have difficulties to move their neck experience an uncomfortable imaging process. The novel 4-channel neck RF coil is made of conductive silver thread embroidered on stretchable fabric to provide patients a more comfortable experience with lightweight and flexible materials. A wide range of neck sizes can be covered with the stretchable materials and great image quality can be acquired due to the RF coil positioned close to the source. The stretchable RF coil was built as non-overlapping 4 channels in zigzag stitch pattern and tested on a dielectric phantom, which was made to have the permittivity and conductivity of muscle at 128 MHz. The research can be extended to stretchable RF coils with more channels and different stitching patterns. It also has potential to be applied on joints such as wrist and ankle due to its flexibility to cover the curved surface. </p>

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In this thesis, the whole process of design a low pass filter (LPF) for the wireless communication application has been presented. Integrated passive device technology based on GaAs substrate has been utilized to make the LPF. Schematic simulation and electromagnetic simulations are extensively used in the design process. EM simulation is used in the selection of layout design and processing parameters for design optimization of both the inductors and IPD harmonic filters. The effective use of EM simulation enables us to realize the successful development of high performance harmonic filters. To make the optimization be more flexible and also for a deeper understanding of the optimization theory, optimization using genetic algorithm is also implemented. The weight of each targets are adjustable, and a non-uniformly distributed goal for the harmonic rejection range is introduced to achieve better optimization results. The embedded LPF is built and measurement results show good agreement with the simulation data. This kind of very compact, high performance harmonic filters can be used in radio transceiver front-end modules. The realized harmonic filters have insertion loss less than 0.6 dB and harmonic rejections greater than 25 dB with a compact die size of 0.8 mm2.

Electrostatic Discharge (ESD) phenomenon is a common phenomenon in daily life and it could damage the integrated circuit throughout the whole cycle of product from the manufacturing. Several ESD stress models and test methods have been used to reproduce ESD events and characterize ESD protection device's performance. The basic ESD stress models are: Human Body Model (HBM), Machine Model (MM), and Charged Device Model (CDM). On-chip ESD protection devices are widely used to discharge ESD current and limit the overstress voltage under different ESD events. Some effective ESD protection devices were reported for low speed circuit applications such as analog ICs or digital ICs in CMOS process. On the contrast, only a few ESD protection devices available for radio frequency integrated circuits (RF ICs). ESD protection for RF ICs is more challenging than traditional low speed CMOS ESD protection design because of the facts that: (1) Process limitation: High-performance RF ICs are typically fabricated in compound semiconductor process such as GaAs pHEMT and SiGe HBT process. And some proved effective ESD devices (e.g. SCR) are not able to be fabricated in those processes due to process limitation. Moreover, compound semiconductor process has lower thermal conductivity which will worsen its ESD damage immunity. (2) Parasitic capacitance limitation: Even for RF CMOS process, the inherent parasitic capacitance of ESD protection devices is a big concern. Therefore, this dissertation will contribute on ESD protection designs for RF ICs in all the major processes including GaAs pHEMT, SiGe BiCMOS and standard CMOS. iv The ESD protection for RF ICs in GaAs pHEMT process is very difficult, and the typical HBM protection level is below 1-kV HBM level. The first part of our work is to analyze pHEMT's snapback, post-snapback saturation and thermal failure under ESD stress using TLP-like Sentaurus TCAD simulation. The snapback is caused by virtual bipolar transistor due to large electron-hole pairs impacted near drain region. Postsnapback saturation is caused by temperature-induced mobility degradation due to IIIV compound semiconductor materials' poor thermal conductivity. And thermal failure is found to be caused by hot spot located in pHEMT's InGaAs layer. Understanding of these physical mechanisms is critical to design effective ESD protection device in GaAs pHEMT process. Several novel ESD protection devices were designed in 0.5um GaAs pHEMT process. The multi-gate pHEMT based ESD protection devices in both enhancementmode and depletion-mode were reported and characterized then. Due to the multiple current paths available in the multi-gate pHEMT, the new ESD protection clamp showed significantly improved ESD performances over the conventional single-gate pHEMT ESD clamp, including higher current discharge capability, lower on-state resistance, and smaller voltage transient. We proposed another further enhanced ESD protection clamp based on a novel drain-less, multi-gate pHEMT in a 0.5um GaAs pHEMT technology. Based on Barth 4002 TLP measurement results, the ESD protection devices proposed in this chapter can improve the ESD level from 1-kV (0.6 A It2) to up to 8-kV ( > 5.2 A It2) under HBM. v Then we optimized SiGe-based silicon controlled rectifiers (SiGe SCR) in SiGe BiCMOS process. SiGe SCR is considered a good candidate ESD protection device in this process. But the possible slow turn-on issue under CDM ESD events is the major concern. In order to optimize the turn-on performance of SiGe SCR against CDM ESD, the Barth 4012 very fast TLP (vfTLP) and vfTLP-like TCAD simulation were used for characterization and analysis. It was demonstrated that a SiGe SCR implemented with a P PLUG layer and minimal PNP base width can supply the smallest peak voltage and fastest response time which is resulted from the fact that the impact ionization region and effective base width in the SiGe SCR were reduced due to the presence of the P PLUG layer. This work demonstrated a practical approach for designing optimum ESD protection solutions for the low-voltage/radio frequency integrated circuits in SiGe BiCMOS process. In the end, we optimized SCRs in standard silicon-based CMOS process to supply protection for high speed/radio-frequency ICs. SCR is again considered the best for its excellent current handling ability. But the parasitic capacitance of SCRs needs to be reduced to limit SCR's impact to RF performance. We proposed a novel SCR-based ESD structure and characterize it experimentally for the design of effective ESD protection in high-frequency CMOS based integrated circuits. The proposed SCR-based ESD protection device showed a much lower parasitic capacitance and better ESD performance than the conventional SCR and a low-capacitance SCR reported in the literature. The physics underlying the low capacitance was explained by measurements using HP 4284 capacitance meter. vi Throughout the dissertation work, all the measurements are mainly conducted using Barth 4002 transimission line pulsing (TLP) and Barth 4012 very fast transmission line pulsing (vfTLP) testers. All the simulation was performed using Sentaurus TCAD tool from Synopsys.

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This decade will hopefully see the first human stepping on the Martian soil. Thus, supporting and enhancing the life quality of a future crew should be the driving theme for accomplishing manned missions on Mars. In this regard, an on-demand, ubiquitous, reliable, wideband, and low-latency connectivity seems of vital importance, both for in-situ and deep-space communications. Hence, this PhD dissertation aims to introduce innovation on this multi-faceted topic, to propose a new set of solutions which we refer to as Next Generation Communications on Mars (NGC-M). First, we discuss through extensive simulations the viability of an Extraterrestrial Long Term Evolution (E-LTE) porting, where a lander and a rover are re-allocated to compose a wireless local mobile network as the base station (BS) and user equipment (UE), respectively. Next, in order to model realistic Martian channels for further solid evaluations, we present a study on large and small-scale phenomena through a three-dimensional (3D) ray-tracing algorithm executed over 3D tile-based rendering of high-resolution Digital Elevation Model (DEM) of the ``Red Planet" surface. Then, we formulate a framework for the design of heterogeneous ground-to-space multi-layered (3D) networks implementing Cloud Radio Access Networks (C-RAN) for ``Towards 6G" Martian connectivity. The results will spread from simulations of the so-called splitting options, for the virtualization of baseband functionalities on non-dedicated hardware, to end-to-end (E2E) network emulations and on-hardware assessments. Finally, a decode-and-forward (DF) optical wireless multi-relay network (OWmRN), based on satellites orbiting the Lagrangian points (LPs), will be proposed for wideband exchanges of data between Mars and Earth. Data rate over time will be measured with respect to the selected shortest-path for relaying. The analysis of the various techniques, performed in a holistic and systemic view, focuses on viability and performance, taking into account trade-offs and constraints inherent to the unusual and challenging Martian application environment.

Yes / A characteristic loop locus of dc power versus RF output power was observed as the frequency was varied around the optimum point of an operational active antenna. A new technique was introduced into the simulation, plotting the dependence of parameters such as supply current, efficiency or output power on internal impedance as seen by the naked transistor. It is now clear that the loop was formed as a consequence of the interaction of the transistor packaging elements with the patch impedances.

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