Yes / Semiconductor nanostructures like CdSe quantum dots and colloidal nanoplatelets exhibit remarkable optical properties, making them interesting for applications in optoelectronics and photocatalysis. For both areas of application a detailed understanding of the electronic structure is essential to achieve highly efficient devices. The electronic structure can be probed using the fact that optical properties of semiconductor nanoparticles are found to be extremely sensitive to the presence of excess charges that can for instance be generated by means of an electrochemical charge transfer via an electrode. Here we present the use of potential modulated absorption spectroscopy (EMAS) as a versatile spectroelectrochemical method to obtain absolute band edge positions of CdSe nanostructures versus a well-defined reference electrode under ambient conditions. In this the spectral properties of the nanoparticles are monitored dependent on an applied electrochemical potential. We developed a bleaching model that yields the lowest electronic state in the conduction band of the nanostructures. A change in the band edge positions caused by quantum confinement is shown both for CdSe quantum dots as well as for colloidal nanoplatelets. In the case of CdSe quantum dots these findings are in good agreement with tight binding calculations. The method presented is not limited to CdSe nanostructures but can be used as a universal tool. Hence, this technique allows the determination of absolute band edge positions of a large variety of materials used in various applications.

A logical progression from the maturing field of colloidal semiconductor quantum dots to the emerging subclass of impurity-doped colloidal semiconductor nanoparticles is underway. To this end, the present work describes the formation and analysis of a new form of Tin-doped Indium Oxide (ITO). The form is that of a colloidal dispersion comprised of pure-phase, 4-6 nanometer ITO particles possessing an essentially single crystalline character. This system forms a non-agglomerated, optically clear solution in a variety of non-polar solvents and can remain in this state, at room temperature, for months and potentially, years. ITO is the most widely used member of the exotic materials family known as Transparent Conductive Oxides (TCOs) and is the primary enabling material behind a wide variety of opto-electronic device technologies. Material synthesis was achieved by initiating a series of interrelated nucleophilic substitution reactions that provided sufficient intensity to promote doping efficiencies greater than 90% for a wide range of tin concentrations. The optical clarity of this colloidal system allowed the intrinsic properties of single crystalline ITO particles to be evaluated prior to their use in thin-films or composite structures. Monitoring the temporal progression of n-type degeneracy by its effects on the optical properties of colloidal dispersions shed light on the fundamental issues of particle formation, band filling (Burstein-Moss) dynamics, and the very origin of n-type degeneracy in ITO. Central to these studies was the issue of excess electron character. The two limiting cases of entirely free and entirely confined electron motion were evaluated by application of bulk-like band dispersion analysis and the effective mass approximation, respectively. This provided a means to estimate the number of excess conduction band electrons present within an individual particle boundary. The ability to control and optimize the level of n-type degeneracy within the colloidal ITO nanoparticle form by compositional variation was also demonstrated. A key to the widespread adoption of a new material by industry is an ability to produce multi-gram and perhaps, kilogram quantities with no significant sacrifice in quality. Accordingly, a modified synthesis process was developed to allow for the mass production of high-quality colloidal ITO nanocrystals.

We report on the fundamental properties and device applications of semiconductor nanoparticles. ZnO nanowires and CdSe quantum dots were used, prepared, characterized, and assembled into novel light-emitting diodes and solar cells. ZnO nanowire films were grown electrochemically using aqueous soluble chloride-based electrolytes as precursors at temperatures below 90° C. Dopants were added to the electrolyte in the form of chloride compounds, which are AlCl3, CoCl2, CuCl2, and MnCl2. The optical, magnetic, and structural properties of undoped and transition-metal-ion doped ZnO nanowires were explored. Our results indicate that the as-grown nanowire structures have considerable internal strain, resulting in clearly visible lattice distortions in bright and dark-field transmission electron micrographs. Photo and electroluminescence studies indicate that the strain-induced defects strongly dominate any dopant-related effects. However, annealing at moderate temperature as well as laser annealing induces strain relaxation and leads to dopant activation. Hence, the optical and electrical properties of the nanowires significantly improve, allowing these nanowires to become feasible for use in the fabrication of solar cell and LED devices. In addition, the magnetic impurities incorporated into our ZnO nanowires show superparamagnetic behavior at room-temperature, while Al-doped and undoped ZnO nanowires show no magnetic behavior. The electroluminescence (EL) is achieved from a vertical hybrid p-n junction LED arrangement consisting of a hole-conducting polymer and n-type ZnO nanowires, our group was the first to report this vertical nanowire-based LED in Könenkamp et al., 2004 [12]. The observed EL spectra show an ultraviolet excitonic emission peak and a broad defect-related emission band in the visible range. After annealing at 380° C, the defect related EL peak exhibits a characteristic shift to higher wavelengths, where the magnitude of the shift is dependent on the dopant type. Aluminum incorporation exhibited the most improved exciton related-emission, leading to the emergence of a narrow excitonic luminescence peak around 390 nm, which is close to the bandgap of ZnO. The comparison of spectra obtained from temperature-dependent photoluminescence (PL) measurements, before and after thermal annealing, also indicates that the optical activity of impurities changes noticeably upon annealing. The internal quantum efficiency for PL is measured to be as high as 16 percent for Al-doped samples annealed at 380° C. The PL measurements also show that the excitonic luminescence is preferentially guided, while the defect related emission is more isotropically emitted. The nanostructured heterojunction solar cell is designed such that thin CdSe quantum dot films are embedded between a ZnO nanowire film and a hole-conducting polymer layer. This arrangement allows for enhanced light absorption and an efficient collection of photogenerated carriers. Here, we present a detailed analysis of the pyridine solution and 1,2- ethanedithiol ligand exchange processes of the quantum dots, deposition processes of this quantum dot layer, the conformality of this layer on deeply nanostructured samples, and the effect of a surfactant-aided thermal annealing process. Annealing creates a structural conversion of the quantum dot layers into an extremely thin continuous poly-crystalline film, with typical grain diameters of 30-50 nm. This transition is accompanied by a loss of quantum confinement and a significant improvement of the charge transport in the CdSe layer. The combination of the solution and ligand exchange of CdSe quantum dots, as well as the deposition and optimized annealing processes of this quantum dot layer, resulted in solar cells with an open-circuit voltage up to 0.6 V, a short circuit current of ~15 mA/cm2, an external quantum efficiency of 70 percent, and an energy conversion efficiency of 3.4 percent. This 3.4 percent efficiency is presently one of the best efficiencies obtained for this type of device.

This thesis investigates the unique properties of 2D devices such as twisted semiconducting bilayers and a-RuCl₃ heterostructures employing scanning tunneling microscopy (STM) and spectroscopy (STS) probes. The research presented here sheds light on the vast opportunities that 2D materials provide in condensed matter systems as well as future device applications. Among 2D materials, transition metal dichalcogenide (TMD) heterobilayers provide a promising platform to study many quantum phenomena such as excitonic states due to their tunability of band gap. In addition, TMDs are excellent candidates to achieve localized states and carrier confinement, crucial for single photon emitters used in quantum computation and information. We begin this thesis with a brief overview of STM/STS and utilizing these techniques on 2D materials in the first and second chapters.The third chapter of this work investigates the twisted bilayer of WSe₂ and MoSe₂ in the H-stacking configuration using STM/STS which was previously challenging to measure. The spectroscopic results obtained from the heterobilayer indicate that a combination of structural rippling and electronic coupling generates unexpectedly large \moire potentials, in the range of several hundred meV. Our analysis reveals that the \moire structure and internal strain, rather than interlayer coupling, are the main factors of the moire potential. Large moire potentials lead to deeply trapped carriers such as electron-hole pairs, so-called excitons. Our findings open new routes toward investigating excitonic states in twisted TMDs. In the next chapter, we investigate the ultralocalized states of twisted WSe₂/MoSe₂ nanobubbles. Mechanical and electrical nanostructurings are expected to modify the band properties of transition metal dichalcogenides at the nanoscale. To visualize this effect, we use STM and near-field photoluminescence to examine the electronic and optical properties of nanobubbles in the semiconducting heterostructures. Our findings reveal a significant change in the local bandgap at the nanobubble, with a continuous evolution towards the edge of the bubble. Moreover, at the edge of the nanobubble, we show the formation of in gap bound states. A continuous redshift of the interlayer exciton on entering the bubble is also detected by the nano-PL. Using self-consistent Schrodinger-Poisson simulations, we further show that strong doping in the bubble region leading to band bending is responsible for achieving ultralocalized states. Overall, this work demonstrates the potential of 2D TMDs for developing well-controlled optical emitters for quantum technologies and photonics. We next turn to the effect of the electric field in band gap tuning of WSe₂/WS₂ heterobilayer. The tunability of band gap is a crucial element in device engineering to achieve quantum emitters. The electrostatic gate generates doping and an electric field giving access to continuous tunability, higher doping level, and integration capability to nanoelectronic devices. We employ scanning tunneling microscopy (STM) and spectroscopy (STS) to probe the band properties of twisted heterobilayer with high energy and spatial resolution. We observe continuous band gap tuning up to several hundreds of meV change by sweeping the back gate. We introduced a capacitance model to take into account the finite tip size leading to an enhanced electric field. The result of our calculation captures well the band gap change observed by STS measurements. Our study offers a new route toward creating highly tunable semiconductors for carrier confinement in quantum technology. In the next chapters, we focus on a-RuCl₃ heterointerfaces. We first explore the nanobubble of graphene/a-RuCl3 to create sharp p-n junctions. The ability to create sharp lateral p-n junctions is a critical requirement for the observation of numerous quantum phenomena. To accomplish this, we used a charge-transfer based heterostructure consisting of graphene and a-RuCl₃ to create nanoscale lateral p-n junctions in the vicinity of nanobubbles. Our approach relied on a combination of scanning tunneling microscopy (STM) and spectroscopy (STS), as well as scattering-type scanning near-field optical microscopy (s-SNOM), which allowed us to examine both the electronic and optical responses of these nanobubble p-n junctions. Our results showed a massive doping variation across the nanobubble with a band offset of 0.6 eV. Further, we observe the formation of an abrupt junction along nanobubble boundaries with an exceptionally sharp lateral width (<3 nm). This is one order of magnitude smaller length scale than previous lithographic methods. Our work paves the way toward device engineering via interfacial charge transfer in graphene and other low-density 2D materials. In chapter 7, we describe the use of low-temperature scanning tunneling microscopy (STM) measurements to observe the \moire pattern in graphene/a-RuCl3 heterostructure to validate the InterMatch method. This method is effective in predicting the charge transfer, strain, and stability of an interface. The InterMatch method was applied to moire patterns of graphene/a-RuCl3 to predict the stable interface structure. STM topographs show three regions with distinct moire wavelengths due to atomic reconstructions. Using the InterMatch method, we perform a comprehensive mapping of the space of superlattice configurations and we identify the energetically favorable superlattices that occur in a small range of twist angles. This range is consistent with the STM results. Moreover, the spectra on these regions exhibit strong resonances with the spacing between resonances following the expectation from Landau levels on a Dirac spectrum due to strain and doping. The results of our scanning tunneling microscopy (STM) measurements confirm that the InterMatch method is effective in predicting the charge transfer and stability of interfaces between materials. We next investigate WSe₂/a-RuCl₃ heterostructure through a multi-faceted approach. Our exploration encompassed diverse techniques such as STM, and optical measurements. We detect a significant charge transfer between the two layers by STM measurements, leading to a shift in the Fermi level towards the valence band of WSe₂. Our findings are supported by optical measurements and DFT calculations, which confirm the p-doped WSe₂ observed through STM. The results of this work highlight a-RuCl₃ potential for contact engineering of TMDs and unlocking their functionalities for the next generation optoelectronic devices. In the last chapter of this thesis, I provide a brief conclusion as well as a few future directions and insights for investigating 2D materials.

This thesis explores colloidal semiconductor nanocrystal solutions as a feedstock for creating thin film semiconductor materials through printing processes. This thesis will span the synthesis of nanocrystals, ligand exchange chemistry, solution phase characterization methods, thin film device fabrication, thin film characterization methods, and device characteristics. We will focus extensively relating the structure of nanocrystals in solution and in thin films to their chemistry, optical properties and electronic properties. By way of introduction, the origin and nature of semiconductor nanocrystals will be explored. This discussion will place semiconductor nanocrystals in their historical context, namely the oil-shocks of the 1970s. The interest in II-VI semiconductor materials stemmed from a desire find photochemical synthetic routes to reduce the use of fossil fuels. As a result, II-VI semiconductor nanocrystal are far more developed synthetically. Additionally, our understanding of II-VI semiconductor nanocrystals is couched in the language of solid state physics rather than chemistry. This will lead into a discussion of their electronic structure and the iterative nature of nanocrystal synthetic development and our theoretical understanding of nanocrystals. The first chapter will discuss nanocrystal synthetic methods in a broad context, finally narrowing in on the synthesis chosen for this work. Following a description of the synthesis, we will then describe the ligand chemistry and the reactions which may be performed in the ligand shell. The final sections of the chapter will describe the synthetic routes to the three nanocrystal materials used in the rest of this work, namely CdSe-CdCl2/PBu3, CdSe-CdCl2/NH2Bu, and CdSe/NH2Bu. The second chapter will introduce the crystal structure of II-VI semiconductor nanocrystals and describe how the structure is measured. This will lead in to a discussion of pair distribution function analysis of X-ray data and examples of its application to the solution phase structure of semiconductor nanocrystals. Some size dependent structural properties, namely stain, will be demonstrated by PDF. At the end evidence for surface reconstruction in solution as ligands are removed will be presented. In the final chapter, techniques for film formation and ligand dissolution with be presented. Annealing of films produces electronic and structural changes which can be observed in the absorbance spectrum, electron microscopy, and X-ray scattering. I propose a three phase annealing model which includes 1) reversible desorption of the organic ligands, 2) irreversible particle fusion, and 3 ripening of grains. The temperature at which ripening occurs depends sensitively on the sample content, which increase chloride concentration decreasing the temperature at which ripening occurs. The ripening process is found to correlate with a phase transition from zinc blende to wurtzite, which indicates that grain boundary mobility is an important part of the ripening process. Finally thin film transistors are characterized electronically. Fused grains show superior electron mobility as high as 25 cm2/(Vs) and on/off ratios of 10\up5 and less than 0.5 V hysteresis in threshold voltage without the addition of indium. Surprisingly, the ripened grains show poorer transport characteristics. The manuscript concludes by noting the importance of the sintering process in achieving conductivity in thin films and discussing future directions to build upon this work.

While significant progress has been made in the treatment and management of cancer, challenges remain because of the complexity and the heterogeneous nature of the disease. The improvement that has been seen in survival rates reflects advancements not only in treatment, but also in early stage detection and diagnostics for certain cancers. In particular, early stage detection and treatment of cancer before it has metastasized to other organs has resulted in a dramatic improvement in patient survival rates. One area of research that has shown considerable promise in further advancing diagnostics and early cancer detection is nanotechnology. Specifically, semiconductor and metal nanoparticles have great potential to provide advanced technology platforms for ultrasensitive and multiplexed detection of disease markers and probe disease on the molecular level. Because they are in the same size regime as biological molecules, these nanoparticles exhibit unique interactions with proteins, nucleic acids and other biomarkers of interest for detecting and diagnosing disease. However, high-quality nanoparticles are often unsuited for use in complex biological environments because of their coatings and surface chemistry. In this work, we describe the design and development of polymer-coated nanoparticle imaging agents for use in blood, cell and tissue diagnostic applications. Low-molecular weight, amphiphilic polymers capable of noncovalent interactions with nanoparticle surface ligands and the aqueous environment were synthesized and characterized for use in nanoparticle coating applications. We demonstrate that the hydrophobic and hydrophilic interactions between the nanoparticle surface, the amphiphilic polymer and the aqueous solvent were able to drive the coating and water solubilization of quantum dots. Novel nanoparticle synthetic techniques were also developed using the amphiphilic polymers in a one-pot method to make high quality semiconductor and gold nanoparticles and stabilize and encapsulate the particles for transfer into water. Using the polymer functional groups as multidentate ligands, nanoparticles were synthesized with a high degree of size control and increased stability. In addition, by performing the synthesis in a noncoordinating amphiphilic solvent such as polyethylene glycol, nanoparticles were immediately transferred to water with the excess polymer forming a water soluble coating. Next, nanoparticle surface charge and how it relates to the nonspecific binding of nanoparticles in cells, tissues and other complex biological samples was studied. We have found that highly charged (negative and positive) particles exhibit significant nonspecific binding to biomolecules and other cellular components in biological environments. By reducing the surface charge through the incorporation of hydroxyl functional groups, we have nearly eliminated the nonspecific binding of quantum dots in blood, cells and tissues. Moreover, through crosslinking and altering the surface chemistry of the polymer-coated quantum dots, we have increased the stability of the nanoparticles while maintaining a small hydrodynamic size. Finally, we have investigated the use of the low-binding, hydroxyl quantum dots in tissue staining applications, where nonspecific binding presents a considerable challenge to detection sensitivity and specificity. A number of biomolecule conjugation techniques were examined for the coupling of quantum dots to antibody targeting molecules and preliminary staining experiments were performed.

Rare-earth ions holmium (Ho+3), Thulium (Tm+3), and Samarium (Sm+3) were investigated for infrared emission and their possible biomedical applications by a photoluminescence (PL) system. Holmium’s (Ho+3) emission peaks were the result of transitions 5 S2 → 5 I7, and 5 S2 → 5 I5 respectively. Samarium’s (Sm+3) emission peaks were 936 nm and 1863 nm. Thulium’s (Tm+3) emission peaks were the a result of transitions 3 H4 → 3 H6, 3 H5 → 3 H6 , and 3 F4 → 3 H6 respectively. Erbium Oxide nanoparticles (Er2O3) mixed with water by a photoluminescence (PL) system. Erbium Oxide’ (Er2O3) nanoparticle’s emission peaks were the a result of transitions 4 I15/2 → 4 S3/2 , 4 I15/2 → 4 I13/2 respectively. The process was also repeated in vacuum and it was found that the green emission enhances tremendously when the nanoparticles are excited in vacuum. This enhanced luminescence from the Erbium Oxide nanoparticles shows their potential importance in the optical devices and Biomedical applications. / Department of Physics and Astronomy

Neste trabalho é apresentado um estudo espectroscópico sobre vidros de germanato contendo nanopartículas (NPs) metálicas e semicondutoras dopados com íons de terras-raras (TRs) Eu3+, Nd3+ e Er3+ visando o desenvolvimento de novos materiais para aplicações em fotônica. Estes vidros apresentam larga janela de transmissão (400-4500 nm), alto índice de refração (~ 1,9), baixa energia de fônon (700 cm-1), alta resistência mecânica e durabilidade química. Com a finalidade de verificar a nucleação das NPs metálicas e semicondutoras, foram realizadas análises por Microscopia Eletrônica de Transmissão (MET) que indicaram a presença de NPs metálicas e semicondutoras. As técnicas de espectroscopia de fluorescência de raios X por energia dispersiva (EDS energy dispersive spectroscopy) e difração de elétrons comprovaram a natureza química das NPs. As medidas de absorção óptica evidenciaram a incorporação dos íons de TRs na forma trivalente, fenômeno responsável pela luminescência nos vidros, e permitiram as medidas das bandas de absorção relacionadas à ressonância dos plasmons superficiais e das bandas de absorção características de NPs de natureza semicondutora. Medidas de emissão foram realizadas através de diferentes procedimentos, que variaram de acordo com a natureza das TRs. Foram medidas intensas bandas de emissão da luz vermelha do Eu3+ relacionadas com as transições 7F J (J=0 a 6) -> 5D0, bandas de emissão associadas à conversão ascendente de freqüências do Er3+ em 530, 550 e 670nm relacionadas com as transições 2H 11/2 -> 4I 15/2 , 4S 3/2 -> 4I 15/2 e 4F 9/2 -> 4I 15/2 respectivamente, e bandas de emissão de luz na região do infravermelho do Nd3+ em 900, 1076 e 1350 nm relacionadas com as transições 4F 3/2 -> 4I 9/2 , 4F 3/2 -> 4I 11/2 e 4F 3/2 -> 4I 13/2 . Foi observado aumento significativo da luminescência da luz vermelha do Eu3+ nas amostras contendo NPs de prata, ouro, e prata juntamente com ouro. Nas amostras contendo NPs de silício foi observado aumento significativo da emissão associada à conversão ascendente de freqüências do érbio. Os aumentos ocorridos na luminescência das amostras contendo NPs metálicas são provavelmente causados pelo aumento do campo local nas proximidades dos íons de TRs e pela transferência de energia entre as NPs e os íons deTRs. Os aumentos ocorridos na luminescência das amostras contendo NPs semicondutoras são provavelmente causados pela transferência eficiente de energia entre as NPs e os íons de TRs originada da recombinação de éxcitons dentro das NPs semicondutoras. Portanto, a presença das NPs desempenha um papel importante para o aumento da luminescência, permitindo o desenvolvimento de novos materiais com aplicações em nanofotônica. / This work presents a spectroscopic study about Eu3+, Nd3+ and Er3+ rare-earth doped germanate glasses containing metallic and semiconductor nanoparticles (NPs) aiming the development of new materials for photonic applications. These glasses have a large transmission window (400-4500 nm), high refractive index (~ 1.9), low phonon energy (700 cm-1), high mechanic resistance and chemical durability. Transmission Electronic Microscopy analysis was performed to verify the metallic and semiconductor NPs nucleation, and indicated the presence of metallic and semiconductor NPs. X ray fluorescence by energy dispersive spectroscopic (EDS) and electron diffraction analysis showed the chemical nature of the NPs. Optic absorption measurement proved the trivalent incorporation of the rare-earth ions, the responsible phenomenon for the luminescence of the glasses that allowed the measurement of the absorption bands related to the superficial plasmon resonance. Emission measurements were performed with different procedures, related to nature of the rare-earth. High emission bands of Eu3+ were measured related to the 7F J (J=0 to 6) -> 5D 0 transitions; emission bands associated to the frequency upconversion of Er3+ in 530, 550 and 670nm related to the 2H 11/2 -> 4I 15/2, 4S 3/2 -> 4I 15/2 e 4F 9/2 -> 4I 15/2 transitions were observed, and as well as emission bands of Nd3+ in 900, 1076 and 1350 nm related with the 4F 3/2 -> 4I 9/2, 4F 3/2 -> 4I 11/2 e 4F 3/2 -> 4I 13/2 transitions. A significant enhancement of the red light luminescence of Eu3+ was observed in the samples containing silver, gold, and silver together with gold NPs. For the samples containing silicon NPs it was observed a considerable enhancement of the frequency upconversion emission of the erbium. The luminescence enhancement of the samples with metallic NPs is due to the enhancement of the local field nearby the rare-earth ions and/or to the energy transfer between the NPs and the rare-earth ions. The luminescence enhancement of the samples with semiconductor NPs are due to the efficient energy transfer between the NPs and the rare-earth ions originated from the excitons recombination inside the semiconductor NPs. Therefore, the presence of the NPs plays an important role on the luminescence enhancement, allowing de development of new materials for nanophotonic applications.

Neste trabalho é apresentado um estudo espectroscópico sobre vidros de germanato contendo nanopartículas (NPs) metálicas e semicondutoras dopados com íons de terras-raras (TRs) Eu3+, Nd3+ e Er3+ visando o desenvolvimento de novos materiais para aplicações em fotônica. Estes vidros apresentam larga janela de transmissão (400-4500 nm), alto índice de refração (~ 1,9), baixa energia de fônon (700 cm-1), alta resistência mecânica e durabilidade química. Com a finalidade de verificar a nucleação das NPs metálicas e semicondutoras, foram realizadas análises por Microscopia Eletrônica de Transmissão (MET) que indicaram a presença de NPs metálicas e semicondutoras. As técnicas de espectroscopia de fluorescência de raios X por energia dispersiva (EDS energy dispersive spectroscopy) e difração de elétrons comprovaram a natureza química das NPs. As medidas de absorção óptica evidenciaram a incorporação dos íons de TRs na forma trivalente, fenômeno responsável pela luminescência nos vidros, e permitiram as medidas das bandas de absorção relacionadas à ressonância dos plasmons superficiais e das bandas de absorção características de NPs de natureza semicondutora. Medidas de emissão foram realizadas através de diferentes procedimentos, que variaram de acordo com a natureza das TRs. Foram medidas intensas bandas de emissão da luz vermelha do Eu3+ relacionadas com as transições 7F J (J=0 a 6) -> 5D0, bandas de emissão associadas à conversão ascendente de freqüências do Er3+ em 530, 550 e 670nm relacionadas com as transições 2H 11/2 -> 4I 15/2 , 4S 3/2 -> 4I 15/2 e 4F 9/2 -> 4I 15/2 respectivamente, e bandas de emissão de luz na região do infravermelho do Nd3+ em 900, 1076 e 1350 nm relacionadas com as transições 4F 3/2 -> 4I 9/2 , 4F 3/2 -> 4I 11/2 e 4F 3/2 -> 4I 13/2 . Foi observado aumento significativo da luminescência da luz vermelha do Eu3+ nas amostras contendo NPs de prata, ouro, e prata juntamente com ouro. Nas amostras contendo NPs de silício foi observado aumento significativo da emissão associada à conversão ascendente de freqüências do érbio. Os aumentos ocorridos na luminescência das amostras contendo NPs metálicas são provavelmente causados pelo aumento do campo local nas proximidades dos íons de TRs e pela transferência de energia entre as NPs e os íons deTRs. Os aumentos ocorridos na luminescência das amostras contendo NPs semicondutoras são provavelmente causados pela transferência eficiente de energia entre as NPs e os íons de TRs originada da recombinação de éxcitons dentro das NPs semicondutoras. Portanto, a presença das NPs desempenha um papel importante para o aumento da luminescência, permitindo o desenvolvimento de novos materiais com aplicações em nanofotônica. / This work presents a spectroscopic study about Eu3+, Nd3+ and Er3+ rare-earth doped germanate glasses containing metallic and semiconductor nanoparticles (NPs) aiming the development of new materials for photonic applications. These glasses have a large transmission window (400-4500 nm), high refractive index (~ 1.9), low phonon energy (700 cm-1), high mechanic resistance and chemical durability. Transmission Electronic Microscopy analysis was performed to verify the metallic and semiconductor NPs nucleation, and indicated the presence of metallic and semiconductor NPs. X ray fluorescence by energy dispersive spectroscopic (EDS) and electron diffraction analysis showed the chemical nature of the NPs. Optic absorption measurement proved the trivalent incorporation of the rare-earth ions, the responsible phenomenon for the luminescence of the glasses that allowed the measurement of the absorption bands related to the superficial plasmon resonance. Emission measurements were performed with different procedures, related to nature of the rare-earth. High emission bands of Eu3+ were measured related to the 7F J (J=0 to 6) -> 5D 0 transitions; emission bands associated to the frequency upconversion of Er3+ in 530, 550 and 670nm related to the 2H 11/2 -> 4I 15/2, 4S 3/2 -> 4I 15/2 e 4F 9/2 -> 4I 15/2 transitions were observed, and as well as emission bands of Nd3+ in 900, 1076 and 1350 nm related with the 4F 3/2 -> 4I 9/2, 4F 3/2 -> 4I 11/2 e 4F 3/2 -> 4I 13/2 transitions. A significant enhancement of the red light luminescence of Eu3+ was observed in the samples containing silver, gold, and silver together with gold NPs. For the samples containing silicon NPs it was observed a considerable enhancement of the frequency upconversion emission of the erbium. The luminescence enhancement of the samples with metallic NPs is due to the enhancement of the local field nearby the rare-earth ions and/or to the energy transfer between the NPs and the rare-earth ions. The luminescence enhancement of the samples with semiconductor NPs are due to the efficient energy transfer between the NPs and the rare-earth ions originated from the excitons recombination inside the semiconductor NPs. Therefore, the presence of the NPs plays an important role on the luminescence enhancement, allowing de development of new materials for nanophotonic applications.

The thesis consists of four parts of which part 1 presents a brief overview of nanomaterials. Parts 2, 3 and 4 contain results of investigations of graphene, nanofilms of noble metal nanoparticles and ZnO nanostructures respectively. Investigations of graphene are described in Part 2 which consists of six chapters. In Chapter 2.1, changes in the electronic structure and properties of graphene induced by molecular charge-transfer have been discussed. Chapter 2.2 deals with the results of a study of the interaction of metal and metal oxide nanoparticles with graphene. Electrical and dielectric properties of graphene-polymer composites are presented in Chapter 2.3. Chapter 2.4 presents photo-thermal effects observed in laser-induced chemical transformations in graphene and other nanocarbons system. Chapter 2.5 describes the mechanical properties of polymer matrix composites reinforced by fewlayer graphene investigated by nano-indentation. The extraordinary synergy found in the mechanical properties of polymer matrix composites reinforced with two nanocarbons of different dimensionalities constitute the subject matter of Chapter 2.6. Investigations of noble metal nanoparticles have been described in Part 3. In Chapter 3.1, ferromagnetism exhibited by nanoparticles of noble metals is discussed in detail while Chapter 3.2 deals with surface-enhanced Raman scattering (SERS) of molecules adsorbed on nanocrystalline Au and Ag films formed at the organic–aqueous interface. Factors affecting laser-excited photoluminescence from ZnO nanostructures are examined in great detail in Part 4.