Thesis (M.Eng.(Microelectronic Engineering))--University of Pretoria, 2009. / Includes summaries in Afrikaans and English. Includes bibliographical references (leaves [74]-78). Mode of access: World Wide Web.

Algumas técnicas foram criadas com o objetivo de reduzir o consumo de potência, dentre elas o uso de Mútiplas Tensões de Alimentação ajustadas de Forma Dinâmica(Multiple Dynamic Supply Voltage - MDSV). Essa técnica visa reduzir o consumo dinâmico utilizando pelo menos três tensões de alimentação diferentes dentro do chip. Para isso, é necessário que circuitos especiais de proteção sejam adicionados ao chip. Os conversores de tensão tem como objetivo aumentar ou diminuir o nível de tensão do sinal de entrada. O custo de introduzir os conversores de tensão, em circuitos que utilizam a técnica MDSV, é alto. Uma vez que isso causa aumento da área total e altera a temporização do chip. Com base nisso, esse trabalho propõem adicionar um caminho alternativo para a corrente, desviando e desligando os conversores de tensão enquanto eles não são necessários. Cabe salientar que alguns conversores de tensão ficam sem utilidade por causa da característica dinâmica dos circuitos contruídos usando MDSV. Com isso, neste trabalho é proposta uma nova construção para os conversores de tensão utilizados em conjunto com o MDSV. Nas simulações elétricas, os circuitos contendo essa nova construção apresentaram redução no tempo de propagação de até 13%, em comparação aos circuitos tradicionalmente utilizados para conversão de tensão. Além da redução no tempo de atraso, foram alcançadas reduções no consumo de potência na ordem de 14%. / Some techniques have been created with the purpose of reducing power consumption, among them the Multiple Dynamic Supply Voltage (MDSV). This technique aims to reduce the dynamic consumption using at least three different supply voltages inside the chip. Therefore, it is necessary that special protection circuits to be added to the chip. Level shifter aims to increase or decrease the voltage level of the input signal. The cost of introducing the voltage converters in circuits using the MDSV technique is high. As this causes increased total area and changes the timing of the chip. Based on this, this paper proposes to add an alternate path for current, deflecting off and the voltage converters as they are not required. It should be noted that some voltage converters are useless because of the dynamic characteristic of contruidos circuits using MDSV. Thus, this work proposes a new construction for the voltage converters used in conjunction with MDSV. In electric simulations, the circuit containing this new construction decreased to 13% in the propagation time in comparison to the circuits traditionally used for voltage conversion. In addition to reducing the delay time, reductions were achieved in the power consumption on the order of 14%.

Algumas técnicas foram criadas com o objetivo de reduzir o consumo de potência, dentre elas o uso de Mútiplas Tensões de Alimentação ajustadas de Forma Dinâmica(Multiple Dynamic Supply Voltage - MDSV). Essa técnica visa reduzir o consumo dinâmico utilizando pelo menos três tensões de alimentação diferentes dentro do chip. Para isso, é necessário que circuitos especiais de proteção sejam adicionados ao chip. Os conversores de tensão tem como objetivo aumentar ou diminuir o nível de tensão do sinal de entrada. O custo de introduzir os conversores de tensão, em circuitos que utilizam a técnica MDSV, é alto. Uma vez que isso causa aumento da área total e altera a temporização do chip. Com base nisso, esse trabalho propõem adicionar um caminho alternativo para a corrente, desviando e desligando os conversores de tensão enquanto eles não são necessários. Cabe salientar que alguns conversores de tensão ficam sem utilidade por causa da característica dinâmica dos circuitos contruídos usando MDSV. Com isso, neste trabalho é proposta uma nova construção para os conversores de tensão utilizados em conjunto com o MDSV. Nas simulações elétricas, os circuitos contendo essa nova construção apresentaram redução no tempo de propagação de até 13%, em comparação aos circuitos tradicionalmente utilizados para conversão de tensão. Além da redução no tempo de atraso, foram alcançadas reduções no consumo de potência na ordem de 14%. / Some techniques have been created with the purpose of reducing power consumption, among them the Multiple Dynamic Supply Voltage (MDSV). This technique aims to reduce the dynamic consumption using at least three different supply voltages inside the chip. Therefore, it is necessary that special protection circuits to be added to the chip. Level shifter aims to increase or decrease the voltage level of the input signal. The cost of introducing the voltage converters in circuits using the MDSV technique is high. As this causes increased total area and changes the timing of the chip. Based on this, this paper proposes to add an alternate path for current, deflecting off and the voltage converters as they are not required. It should be noted that some voltage converters are useless because of the dynamic characteristic of contruidos circuits using MDSV. Thus, this work proposes a new construction for the voltage converters used in conjunction with MDSV. In electric simulations, the circuit containing this new construction decreased to 13% in the propagation time in comparison to the circuits traditionally used for voltage conversion. In addition to reducing the delay time, reductions were achieved in the power consumption on the order of 14%.

Phase Shifters are one of the most important building cells of the applications in microwave and millimeter-wave range, especially for communications and radar applications / to steer the main beam for electronic scanning. This thesis includes all of the stages starting from the theoretical design stage to the measurements of the phase shifters. In detail, all-pass network phase shifter configuration is used to achieve broadband and ultra wide-band differential phase characteristics. For these reasons, 1 to 2 GHz, 2 to 4 GHz, and 3 to 6 GHz 4-bit, 22.5&deg / phase resolution phase shifter realization with surface micromachined lumped components are designed, simulated, fabricated and measured. Basic building blocks of the phase shifters, i.e., surface micromachined lumped components, square planar spiral inductors and Metal-Insulator-Metal capacitors are designed with EM simulation and lumped equivalent model extractions. The validation of the designed square planar spiral inductors is done with fabrication and measurement steps, very low error, below 1%, between the designs and fabricated samples are observed. Using this knowledge on lumped elements finally phase shifters are designed with surface micromachined lumped components, fabricated using an in house technology provided by METU-MEMS facilities, RF MEMS group. Low phase rms error, good return and insertion loss considerations are aimed, and achieved. In addition to the main work of this thesis, a generalized theoretical calculation method for 2n-1 number of stages all-pass network phase shifters is presented for the first time in literature. A different, new, broadband, and combined phase shifter topology using two-stage all-pass filters is presented. Moreover, the implementation of this idea is proved to be practical to 3 to 6 GHz 5.625&deg / and 11.25&deg / combined phase shifter. A new approach for stage numbers other than power of 2 is indicated, which is different from what is already presented in the literature. An example practical implementation results are provided for the three-stage 4-bit 1 to 6 GHz phase shifter. Also, a small improvement in SRF of the high inductance valued inductors is achieved with the mitering of the corners of square planar spiral inductors. Comparison of the measured data between the normal inductors and mitered versions shows that the first SRF of the inductors are increased about 80 MHz, and second SRF of the inductors are increased about 200 MHz.

Ultra narrow-band filters and the use of two loops in a cascade configuration dominate current clock conditioners based on phase-locked-loop (PLL) schemes. Since a PLL exhibits a low-pass transfer function with respect to the reference clock, the noise performance at very close-to-carrier offset frequencies is still determined by the input signal. Although better cleaning can be achieved with extremely narrow loops, an ultra low cut-off frequency could not be selected since the stability of the configuration deteriorates as the filter bandwidth is reduced. This fact suggests that a full-spectrum clock conditioning is not possible using traditional PLL architectures, and an alternative scheme is necessary to attenuate the very-close-to-carrier phase noise (PN). In addition, ultra-narrow loop filters can compromise on-chip integration because of the large size capacitors needed when chosen as passive. Input signal attenuation with relaxed bandwidth requirements becomes the main aspect that a comprehensive clock cleaner must address to effectively regenerate a reference signal. This dissertation describes the Band-Reject Nested-PLL (BRN-PLL) scheme, a modified PLL-based architecture that provides an effective signal cleaning procedure by introducing a notch in the input transfer function through inner and outer loops and a high-pass filter (HPF). This modified response attenuates the reference-signal PN and reduces the size of the loop-filter capacitors substantially. Ultra narrow loops are no longer required because the notch size is related to the system bandwidth. The associated transfer function for the constitutive blocks (phase detectors and local oscillators) show that the output close-to-carrier and far-from-carrier PN sections are mainly dominated by the noise from the inner-PLL phase detector (PD) and local oscillator (LO) located in the outer loop, respectively. The inner-PLL PD transfer function maintains a low-pass characteristic with a passband gain inversely proportional to the PD gain becoming the main contribution around the carrier signal. On the other hand, the PN around the transition frequency is determined mainly by the reference and the inner-PLL LO. Their noise contributions to the output will depend on the associated passband local maxima, which is located at the BRN-PLL transition frequency. Hence, in this region, the inner-PLL LO is selected so that its effect can be held below that of the outer-PLL PD. The BRN-PLL can use a high-Q MEMS-based VCO to further improve the transition region of the output PN profile and an LC-VCO as outer-PLL LO to reduce the noise floor of the output signal. In particular, two tuning mechanisms are explored for the MEMS-VCO: series tuning using varactors and phase shifting of a resonator operating in nonlinear regime. Both schemes are implemented to generate a tunable oscillator with no PN-performance degradation.

Recent developments in the area of microfabrication technologies, has enabled the fabrication of many radio frequency/microwave components with better performance and lower cost than possible with semiconductor based fabrication technology. Many of these microfabricated RF components such as switches and phase shifters, popularly known as RF MEMS, are aimed at reducing the insertion loss and improving other performance parameters such as linearity. For these devices size miniaturization is not necessarily important, as in practical subsystems, these components are integrated with RF front-ends on a laminate. This thesis deals with concepts of a low cost passive phase shifter fabricated in-situ on a microwave laminate. The operation of this Mesoscale Electrostatically actuated Phase shifter on microwave Laminate (MEPL) is similar to that of a micromachined distributed MEMS transmission line (DMTL) phase shifter. In spite of advantages of low losses, wide bandwidth, low DC power consumption and high linearity over semiconductor/MMIC technology, microfabricated phase shifters are often not used in field because of issues related to fabrication reliability, packaging and integration. On the other hand, the proposed MEPL will have all the advantages of conventional MEMS phase shifters with additional benefit of lower cost. Furthermore, these are integrable to form a monolithic phased array. A MEPL phase shifter of 50-bridges periodically distributed on the co-planar waveguide (CPW) transmission line is demonstrated in this thesis. MEMS air bridges are electrostatically actuated to vary the capacitance of the transmission line, which changes the phase velocity of the propagation RF signal, consequently phase at the output port. The realized MEPL is characterized for electromagnetic as well as electromechanical performance. The electromechanical characterization of this device is performed using a Laser Doppler Vibrometer (LDV). The measured data showed good agreement with the analytical data.. Major application of a phase shifter is in a phased array antenna system. MEPL is particularly suited for a monolithic phase array antenna. The proposed monolithic phased array antenna system fabrication approach utilizes extremely simple and economical modern printed circuit board technology to pattern the conventional microwave laminate and copper foil. A complete monolithic phased array antenna system is fabricated on a microwave laminate using an embedded phase shifter operating with electrostatic principles. Other components such as DC block and bias tee are integrated into the CPW-microstrip transitions to optimize the space and performance. Integrated phased array antenna is fabricated and tested to demonstrate the beam steering capability. Measured S11 is better than -15dB at the operating frequency of 9.8GHz. The beam steering capability is shown as proof of concept by showing the beam scan angle of 10deg with bias voltage of 125V. The mesoscale phase shifter demonstrated in this thesis has several advantages compared to micromachined phase shifters. The proposed fabrication approach does not use metal deposition/patterning process, which removes the need of high cost clean room and sophisticated films deposition equipments. Secondly, as there are no thin films used, stiction is not expected on phase shifters fabricated with this approach. Since this approach uses thicker metal films, the power handling capability is expected to be significantly higher than micromachined phase shifters. Since conventional phased array antenna system components are fabricated on a microwave laminate, micro machined phase shifters realized on semiconductor substrates are required to be packaged separately before integrating with such phased array circuits. Packaging of the micro-machined RF-MEMS/MEMS devices is still a major issue and contributes to a substantial part of the total cost. Unlike micromachined phase shifters which are required to be packaged and then embedded in phased array applications, device presented in this thesis is packaged in-situ. Compared to similar monolithic phased array antenna reported on silicon substrate which are limited by wafer size, these arrays can be easily extended for larger arrays on microwave laminate as these are available in large size. To summarize, the proposed fabrication approach for phase shifters overcomes many limitations of micromachined components for microwave applications while retaining most of their advantages compared to other existing approaches based on ferrites or semiconductor technologies.

This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2×2 up to 8×8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0º-180º capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased array switch elements is demonstrated in this chapter. An executive summary and conclusions sections are also included in the thesis.

Microwave Photonics(MWP) has been defined as the study of photonic devices which operate at microwave frequencies and also their applications to microwave and optical systems. One or more electrical signals at microwave frequencies are transported over the optic link ,with electrical to optical and optical to electrical conversion on the transmission and receiving side respectively. The key advantages of microwave photonic links over conventional electrical transmission systems such as coaxial cables or waveguides ,includes reduced size, weight and cost, immunity to electromagnetic interference ,low dispersion and high data transfer capacity. Integrated Optics is the name given to a new generation of opto-electronic systems in which the familiar wires and cables are replaced by light-waveguiding optical fibers, and conventional integrated circuits are replaced by optical integrated circuits (OICs).Microwave Photonics with photonic integration can add the benefits of reduction in system size, losses, short path lengths leading to more efficient cost effective systems. In this thesis, a new approach for using 1-D linear arrays of curved waveguides as delay lines is presented. We propose a design for a passive phase shifter obtained by curved waveguide delay lines. The modulated RF signal obtains the phase shift in the optical domain which is transferred to the RF signal by heterodyning techniques .This phase shift is independent of the RF frequency and hence the Beam squinting which occurs in the conventional RF phase shifter systems is avoided in the proposed system. Switching between different lengths of the bent/curved waveguides can produce variable phase shifts ranging from 0 to 2 radians. The use of curved waveguides for delay generation and optimization of various parameters are the main topics of the research problem. The need for delay line is large and most of these were implemented previously using long optical fiber cables. More precise delays could be obtained by using waveguide delay lines as compared to fiber delay lines. Waveguides paves way for design in smaller dimensions ranging from m to nm in integrated optics. The differential phase shift for a signal propagating in a waveguide from waveguide theory is given as which clearly indicates that the differential phase shifts could be obtained in accordance with differential path lengths Δl with β as the propagation constant. S-bend waveguide sections of different lengths along with straight waveguide as reference for each section are employed. The phase delay is passively obtained by a differential path length change, where various phase shift values can be obtained by switching between different differential path lengths. Since the optical phase delay generated is in- dependent of the input RF frequency. A shift in the RF frequency, at the input will not change the phase or beam pointing angle when the phase shifter is employed for beam pointing in case of Phased Array Antenna applications. A 1-bit phase shifter is the firrst step in the design which could be further extended to n-bit phase shifter. Here 1-bit or n-bit ,is one where n can take any integer value. Each bit is composed of a reference phase signal pathway and a delayed phase signal pathway. When the optical signal goes every single bit through the reference phase the phase shift is ‘0’ radians ,the other is through the delayed path which is . For every n-bit, 2n delays can be obtained. For the 1-bit,2 delays are obtained. Switching between the path lengths is done using the directional coupler switches. Th optimization of different parameters of the S-bend waveguide delay line has been realized and studied. The design and optimisation of a 1-bit optical RF phase shifter is discussed which could be extended to n-bit phase shifters. These S-bends are studied analytically. Beam Propagation Method (BPM)is employed for modeling and simulation of the proposed device. An interferometric configuration is considered for practical measurement of optical phase. In this configuration the phase change is translated into amplitude or intensity measurement. One of the arms of the Maczehdner Interferometer has no path length change while the other arm has an S-bend structure which provides the path length difference as compared to the reference path, and hence produces the necessary phase shift at the output of the interferometer as required. By changing the path length difference between the two arms of the interferometer ,a change in intensity is produced at the output of the interferometer. In this study, integrated optic curved waveguide delay line phase shifters are designed and analyzed, considering the Titanium Di used Lithium Niobate Technology. This is because it has good electro-optic properties necessary for designing switches used for switching between delay segments. Practical parameters that can be fabricated are employed in the design and simulation studies reported here. Fabrication is also done using the Lithium Niobate Technology. However the fabrication studies are excluded from the main stream, as further fabrication studies are necessary to realise the actual devices de- signed. The fabrication aspects are left as scope for further development. The fabricated devices are shown as appendix to the thesis. Organisation of the thesis Chapter 1 gives the introduction to the fields of Microwave Photonics and Integrated optics and its applications. Chapter 2discusses the curved waveguide theory and design with coverage of materials and methods employed in the proposed system. Chapter 3 discusses the different types of delay lines and the design of the 1-bit phase shifter which can be extended to the design of a n-bit phase shifter with both analytical and simulation results. Chapter 4 discusses the method of phase measurement for the n-bit phase shifter and the possible applications where the phase shifter could be employed. Chapter 5 discusses conclusions and future work in the proposed area of work. Appendix A discusses the loss calculations for the Cosine S-bend waveguide. Appendix B gives the fabrication details. The references form the end part of the thesis.

This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2×2 up to 8×8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0º-180º capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased array switch elements is demonstrated in this chapter. An executive summary and conclusions sections are also included in the thesis.

Most of today’s microwave circuits are designed for specific function and specialneed. There is a growing trend to have flexible and reconfigurable circuits. Circuitsthat can be digitally programmed to achieve various functions based on specific needs. Realization of high frequency circuit blocks that can be dynamically reconfigured toachieve the desired performance seems to be challenging. However, with recentadvances in many areas of technology these demands can now be met. Two concepts have been investigated in this thesis. The initial part presents thefeasibility of a flexible and programmable circuit (PROMFA) that can be utilized formultifunctional systems operating at microwave frequencies. Design details andPROMFA implementation is presented. This concept is based on an array of genericcells, which consists of a matrix of analog building blocks that can be dynamicallyreconfigured. Either each matrix element can be programmed independently or severalelements can be programmed collectively to achieve a specific function. The PROMFA circuit can therefore realize more complex functions, such as filters oroscillators. Realization of a flexible RF circuit based on generic cells is a new concept.In order to validate the idea, a test chip has been fabricated in a 0.2μm GaAs process, ED02AH from OMMICTM. Simulated and measured results are presented along withsome key applications like implementation of a widely tunable band pass filter and anactive corporate feed network. The later part of the thesis covers the design and implementation of tunable andwideband highly linear LNAs that can be very useful for multistandard terminals suchas software defined radio (SDR). One of the key components in the design of a flexibleradio is low noise amplifier (LNA). Considering a multimode and multiband radiofront end, the LNA must provide adequate performance within a large frequency band.Optimization of LNA performance for a single frequency band is not suitable for thisapplication. There are two possible solutions for multiband and multimode radio frontends (a) Narrowband tunable LNAs (b) Wideband highly linear LNAs. A dual bandtunable LNA MMIC has been fabricated in 0.2μm GaAs process. A self tuningtechnique has also been proposed for the optimization of this LNA. This thesis alsopresents the design of a novel highly linear current mode LNA that can be used forwideband RF front ends for multistandard applications. Technology process for thiscircuit is 90nm CMOS.