L’objectif de ce travail est de concevoir et de caractériser un front-end millimétriqueutilisant des lignes de propagation à ondes lentes S-CPW optimisées en technologies CMOS avancées.Ces lignes présentant des facteurs de qualité 2 à 3 fois supérieurs à ceux des lignes classiques de typemicroruban ou CPW.Dans le premier chapitre, l’impact de l’évolution des noeuds technologiques CMOS sur lesperformances des transistors MOS aux fréquences millimétriques et sur les lignes de propagation ainsiqu’un état de l’art concernant les performances des front-end sont présentés. Le deuxième chapitreconcerne la réalisation des lignes S-CPW dans différentes technologies CMOS et la validation d’unmodèle phénoménologique électrique équivalent. Le troisième chapitre est dédié à la conceptiond’amplificateurs de puissance à 60 GHz utilisant ces lignes S-CPW en technologies CMOS 45 et65 nm. Cette étude a permis de mettre en évidence l’apport des lignes à ondes lentes aux performancesdes amplificateurs de puissance fonctionnant dans la gamme des fréquences millimétriques. Uneméthode de conception basée sur les règles d’électro-migration et permettant une optimisation desperformances a été développée. Finalement, un amplificateur faible bruit et un commutateur d’antennetravaillant à 60 GHz et à base de lignes S-CPW ont été conçus en technologie CMOS 65 nm afin degénéraliser l’impact de ce type de lignes sur les performances des front-end millimétriques. / The objective of this work is to design and characterize a millimeter-wave front-end usingthe optimized slow-wave transmission lines S-CPW in advanced CMOS technologies. The qualityfactor of these transmission lines is twice to three times higher than that of the conventionaltransmission lines such as microstrip lines and coplanar waveguides.In the first chapter, the influence of CMOS scaling-down on the performance of transistors atmillimeter-wave frequencies and on the transmission lines was studied. In addition, a state of the artwith regard to the performance of the front-end was presented. The second chapter concerns about therealization of the S-CPW lines in different CMOS technologies and the validation of an electricalequivalent model. The third chapter is dedicated to the design of 60-GHz power amplifiers using theseS-CPW lines in CMOS 45 and 65 nm technologies. This study highlighted the performanceenhancement of power amplifiers operating at millimeter-wave frequencies by using the slow-wavetransmission lines. A design method based on the electro-migration rules was also developed. Finally,a low noise amplifier and an antenna switch operating at 60 GHz were designed in CMOS 65 nm inorder to generalize the impact of such transmission lines on the performance of the millimeter-wavefront-end.

State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented.

Ultraprecision single point diamond turning is required to produce parts with sub-nanometer surface roughness and sub-micrometer surface profiles tolerances. These parts have applications in the optics industry, where tight form accuracy is required while achieving high surface finish quality. Generally, parts can be polished to achieve the desired finish, but then the form accuracy can easily be lost in the process rendering the part unusable. Currently, most mid to low spatial frequency surface finish errors are inspected offline. This is done by physically removing the workpiece from the machining fixture and mounting the part in a laser interferometer. This action introduces errors in itself through minute differences in the support conditions of the over constrained part on a machine as compared to the mounting conditions used for part measurement. Once removed, the fixture induced stresses and the part’s internal residual stresses relax and change the shape of the generally thin parts machined in these applications. Thereby, the offline inspection provides an erroneous description of the performance of the machine. This research explores the use of a single, high resolution, capacitance sensor to quickly and qualitatively measure the low to mid spatial frequencies on the workpiece surface, while it is mounted in a fixture on a standard ultraprecision single point diamond turning machine after a standard facing operation. Following initial testing, a strong qualitative correlation exists between the surface profiling on a standard offline system and this online measuring system. Despite environmental effects and the effects of the machine on the measurement system, the capacitive system with some modifications and awareness of its measurement method is a viable option for measuring mid to low spatial frequencies on a workpiece surface mounted on an ultraprecision machine with a resolution of 1nm with an error band of ±5nm with a 20kHz bandwidth. / Thesis / Master of Applied Science (MASc)