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This diploma thesis is focused on preparation of perovskite methylammonium lead bromide thin film layers and also thin film layers of its precursors, namely methylammonium bromide and lead(II) bromide, by spin-coating from the solution; and optical characterisation of the prepared thin film layers by UV-VIS spectroscopy and spectroscopical ellipsometry. Methylammonium bromide does not absorb in visible nor ultraviolet region, the maximum absorption of lead(II) bromide occurred in ultraviolet region, methylammonium lead bromide absorbs in visible region. Optical band gaps were determined by Tauc method to (3,5 ± 0,1) eV for lead(II) bromide and 2,15 eV, respectively 2,25 eV for perovskite. Refractive indices and extinction coefficients were determined by ellipsometry in range of wavelengths from 290 nm to 830 nm and their dependence with layer thickness was discussed. Ellipsometry model used in this thesis consist on Tauc-Lorentz oscillators for methylammonium bromide, methylammonium lead bromide and partially for lead(II) bromide, which another part is formed by New Amorphous oscillator.

Made available in DSpace on 2016-06-02T20:36:36Z (GMT). No. of bitstreams: 1 4179.pdf: 5952888 bytes, checksum: b0961612c482aa701a73cb33605c06a6 (MD5) Previous issue date: 2012-02-17 / The formation of In1-xSnxO2 (ITO) nanocrystals through the conversion of radiant energy into heat has been studied by using an adapted domestic microwave oven. The formation of powder was obtained by heating the oven to 200 C using a heating rate of 50 C/min and soaking time of 30 min. The obtained powder by this method was characterized by X-ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FEG-SEM), High Resolution Transmission Electron Microscope (HRTEM) and Selected Area Diffraction technique whose enable to distinguish possible crystalline phases, as well as the structure and morphology of the powder. Spherical particles with average size of 4, 8 and 12 nm were identified. This powder was characterized by sensing response against the presence or absence of oxygen gas. Finally, ITO powder was deposited on amorphous quartz or glass substrates by spin coating method. The films thus obtained were characterized by FEG-SEM, UVVIS and the electrical sheet resistance was measured using a four probe tips. Best results were obtained in the film whose particles were synthesized at pH 6,5. Optical transmittance at visible region of 98,5 % was observed and with an optical gap and resistance calculated to be 3,55 eV and 3,6.10-3 Ω.m respectively. / Utilizando um forno micro-ondas doméstico adaptado como fonte de energia, estudou-se a formação de nanocristais de In1-xSnxO2 (ITO) por meio da conversão de energia radiante em térmica. O pó do material foi formado em uma temperatura de 200 ºC por tempo de 30 minutos, a razão de aquecimento do sistema foi de 50 ºC/min. Os pós obtidos por esse método foram caracterizadas por Difratometria de raios-X (DRX), Microscopia Eletrônica de Varredura com Campo Emissor de Elétrons (FEG-SEM), Microscopia Eletrônica de Transmissão de Alta Resolução (HRTEM) e Difração em Área Selecionada (SAD), essas técnicas possibilitaram a distinção das possíveis fases bem como a estrutura e morfologia do pó. Partículas esféricas e com tamanhos médios de 4, 8 e 13 nm foram identificadas. Os pós também foram caracterizados como sensores e suas respostas foram medidas na presença e ausência do gás oxigênio. Finalmente, o pó de ITO foi depositado sobre substrato de quartzo amorfo ou vidro pelo Método Spin Coating. Os filmes assim obtidos foram caracterizados por FEG-SEM, UV-VIS e a resistência elétrica superficial de cada um dos filmes foram medidas pelo método de quatro pontas. Os melhores resultados foram apresentados pelo filme cujas partículas foram sintetizadas em pH 6,5, sua transmitância é de 98,5%, gap óptico de 3,55 eV e resistividade de 3,6 10-3Ω.m.

Auf dielektrische Substrate wurden Schichten aus Gold thermisch aufgedampft. Die Schichten wurden neben anderen Methoden wie AFM oder der Messung der Schichtleitfähigkeiten hauptsächlich mit Hilfe der spektroskopischen IR-Ellipsometrie (SIRE) in einem Schichtdickenbereich von 4 bis 60 nm systematisch untersucht. Aus den primär ermittelten ellipsometrischen Parametern tan(Psi) und Delta lassen sich der Brechungsindex n und der Absorptionsindex k bestimmen und auch weitere Größen wie z.B. der elektrische Widerstand bzw. die elektrische Leitfähigkeit errechnen. Die untersuchten Schichten lassen sich anhand der optischen, topographischen und elektrischen Eigenschaften in drei Gruppen einteilen: Dielektrische, aus isolierten Goldinseln bestehende Filme (4 bis 6 nm), Schichten in einem Übergangsbereich (8 bis ca. 16 nm), metallische Schichten (ab ca. 16 nm). Die dielektrischen Goldinselfilme zeigen optische Eigenschaften, die bislang für keine anderen Proben beschrieben worden sind. Der Brechungsindex n ist hoch (4 bis 9 bei 2400/cm) und der Absorptionsindex k klein (0 bis 4 bei 2400/cm). Beide Indizes sind spektral weitgehend konstant. Daß diese Filme dielektrische Eigenschaften besitzen, steht in direktem Widerspruch zur allgemeinen SEIRA-Literatur. Die Inselstruktur der dielektrischen Filme verursacht einen Verstärkungseffekt, der als Oberflächenverstärkte Infrarotabsorption (surface-enhanced infrared absorption - SEIRA) bekannt ist. Es zeigte sich, daß die optischen Konstanten der Filme einen erheblichen Einfluß auf die SEIRA-Verstärkung ausüben. Um Inselfilme mit reproduzierbaren optischen Eigenschaften herstellen zu können, wurde ein lithographisches Verfahren entwickelt. Auf einer geschlossenen, homogenen Goldschicht wurden monodisperse Nanopartikel aus Polystyrol (PS) in einer Monolage deponiert. Die PS-Nanopartikel dienten in einem trockenen Ätzprozeß im Ar-Plasma als lithographische Maske, um die darunterliegende Au-Schicht zu strukturieren. / Thin films were produced on dielectric substrates by thermal evaporation of gold in a high vacuum chamber. These films were investigated systematically in a range between 4 and 60 nm thickness. The method mainly applied was the spectroscopic IR-ellipsometry (SIRE), in addition to other methods like AFM or sheet resistance measurement. The primary results are the ellipsometric parameters tan(Psi) and Delta. They were used to determine the refractive index n and the absorption index k. Electrical parameters can also be calculated. Depending on the optical, topographical and electrical properties the population of different layers can be divided into three parts: dielectric films with isolated gold islands (4 to 6 nm), layers in a transient area (8 to ca. 16 nm), metal films (ca. 16 to 60 nm). The optical properties shown by dielectric gold island films were never before described for other samples. The refractive index n is high (4 to 9 at 2400/cm) and the absorption index small (0 to 4 at 2400/cm). Both indices are nearly constant in the spectral range. Directly in contrast to the SEIRA-literature the island films show dielectric properties. The island structure of the dielectric films gives rise to an enhancement effect called surface-enhanced infrared absorption (SEIRA). It could be shown that the optical constants of the island films have a considerable influence on the enhancement factors. A lithographic method was developed in order to find a way for manufacturing island films with reproducible optical properties. Monodispers polystyrene nanoparticles were deposited in a monolayer on a dense gold layer on a dielectric substrate. The layer of nanoparticles was used as a mask for a dry etch process in a reactive Ar-plasma.