Nanostructured ZnO films were obtained via thermal oxidation of thin films formed with metallic Zn-nanoparticle dispersions. Commercial zinc nanoparticles used for this work were characterized by microscopic and thermal analysis methods to analyze the Zn-ZnO core shell structure, surface morphology and oxidation characteristics. These dispersions were spin-coated on SiO₂/Si substrates and then annealed in air between 100 and 600 °C. Significant nanostructural changes were observed for the resulting films, particularly those from larger Zn nanoparticles. These nanostructures, including nanoneedles and nanorods, were likely formed due to fracturing of ZnO outer shell due to differential thermal expansion between the Zn core and the ZnO shell. At temperatures above 227 °C, the metallic Zn has a high vapor pressure leading to high mass transport through these defects. Ultimately the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. We have found that the resulting films annealed above 400 °C had high electrical resistivity. The zinc nanoparticles were incorporated into zinc indium oxide solution and spin-coated to form thin film transistor (TFT) test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing. The functionalization of zinc tin oxide (ZTO) films with self-assembled monolayers (SAMs) of n-hexylphosphonic acid (n-HPA) was investigated. The n-HPA modified ZTO surfaces were characterized using contact angle measurement, x-ray photoelectron spectroscopy (XPS) and electrical measurements. High contact angles were obtained suggesting high surface coverage of n-HPA on the ZTO films, which was also confirmed using XPS. The impact of n-HPA functionalization on the stability of ZTO TFTs was investigated. The n-HPA functionalized ZTO TFTs were either measured directly after drying or after post-annealing at 140 °C for 48 hours in flowing nitrogen. Their electrical characteristics were compared with that of non-functionalized ZTO reference TFTs fabricated using identical conditions. We found that the non-functionalized devices had a significant turn-on voltage (V[subscript ON]) shift of ~0.9 V and ~1.5 V for the non-annealed and the post-annealed conditions under positive gate bias stress for 10,000 seconds. The n-HPA modified devices showed very minimal shift in V[subscript ON] (0.1 V), regardless of post-thermal treatment. The VON instabilities were attributed to the interaction of species from the ambient atmosphere with the exposed ZTO back channel during gate voltage stress. These species can either accept or donate electrons resulting in changes in the channel conductance with respect to the applied stress. / Graduation date: 2012 / Access restricted to the OSU Community at author's request from Jan. 6, 2012 - Jan. 6, 2013

Amorphous Silicon(a-Si) films have attracted the attention of several investigators as it is an economical material for devices. One of the problems that is addressed is the doping of these films after they are prepared. In this thesis, we investigated the effects of doping amorphous Sil­icon films(prepared by r.f. sputtering) with Aluminium(Al) by ther­mal diffusion. Amorphous Silicon films have been prepared on glass substrates at optimal process parameters. Then, the a-Si films are coated with Al by vacuum evaporation and subjected to heating in N2 atmosphere in the temperature range 300°C to 600°C for different durations. After etching Al layer, it has been found that some of the films which are heated around 550°C contain filament like polycrystalline regions surrounding islands of a-Si. This structure has been confirmed through Scanning Electron Mi-croscope(SEM) photographs and electrical conductivity measurements. SEM photographs indicate that, bright regions of amorphous mate­rial are surrounded by dark regions of relatively higher conducting boundaries. The electrical conductivity study shows that there is sharp increase in conductivity of Al doped films, which is attributed to the conduct­ing polycrystalUne filament. A simple model has been proposed to explain the variation of con­ductivity of these transformed films, with process parameters and with temperature. Schottky barrier diodes have been fabricated using these trans­formed materials and their characteristics explained.

Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs will become necessary to enable ultra-definition resolution high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were fabricated by RF magnetron sputter deposition. In this study, the effect of both deposition and post annealing conditions have been evaluated in regards to film structure, composition, surface contamination, and device performance. Both the variation of oxygen partial pressure during deposition and the temperature of the post-deposition annealing were found to have a significant impact on TFT properties. X-ray diffraction data indicated that the ZTO films remain amorphous even after annealing to 600° C. Rutherford backscattering spectrometry indicated that the Zn:Sn ratio of the films was ~1.7:1 which is slightly tin rich compared to the sputter target composition. X-ray photoelectron spectroscopy data indicated that the films had significant surface contamination and that the Zn:Sn ratios changed depending on sample annealing conditions. Electrical characterization of ZTO films using TFT test structures indicated that mobilities as high as 17 cm² V⁻¹ s⁻¹ could be obtained for depletion mode devices. It was determined that the electrical properties of ZTO films can be precisely controlled by varying the deposition conditions and annealing temperature. It was found that the ZTO electrical properties could be controlled where insulating, semiconducting and conducting films could be prepared. This precise control of electrical properties allowed us to incorporate sputter deposited ZTO films into resistive random access memory (RRAM) devices. RRAM are two terminal nonvolatile data memory devices that are very promising for the replacement of silicon-based Flash. These devices exhibited resistive switching between high-resistance states to low-resistance states and low-resistance states to high-resistance states depending on polarity of applied voltages and current compliance settings. The device switching was fundamentally related to the defect states and material properties of metal and insulator layers, and their interfaces in the metalinsulator-metal (MIM) structure. / Graduation date: 2012 / Access restricted to the OSU Community at author's request from Jan. 6, 2012 - Jan. 6, 2013

La pulvérisation cathodique magnétron est un procédé plasma très répandu dans l'industrie pour le dépôt de couches minces. Néanmoins, les exigences des nouvelles applications nécessitent de mieux comprendre, contrôler et maîtriser les processus fondamentaux gouvernant le transport de la matière pour optimiser le procédé. Ce travail de thèse porte sur l'étude du transport des atomes pulvérisés de tungstène (W) en décharge magnétron continu (DC direct current) et pulsée haute puissance (HiPIMS_high power impulse magnétron sputtering). La fluorescence induite par diode laser (TD-LIF) a été mise au point afin de mesurer les fonctions de distribution en vitesse des atomes W pulvérisés. Les mesures ont été calibrées par absorption laser et validées en corrélant avec les vitesses de dépôt. En procédé DC, l'étude de l’influence des paramètres de la décharge (puissance, tension, mélange gazeux Ar/He, distance par rapport à la cible, etc.) a mis en évidence l'évolution spatiale des régimes de transport balistique (atomes énergétiques), diffusif (atomes thermalisés), et mixte (balistique+diffusif). Pour l'étude du procédé HiPIMS, le plasma pulsé a nécessité de développer la TD-LIF résolue en temps (TR-TDLIF). Le degré de liberté supplémentaire qu'offre la dimension temporelle du plasma HiPIMS a permis de mieux comprendre le transport mixte qui représente le cas le plus compliqué. En effet, cela a permis de mesurer la cinétique du transport des atomes pulvérisés en ayant la possibilité de séparer les temps caractéristiques des différents processus / Magnetron sputter deposition is an established and widely used method for the growth of thin films. Nevertheless, the high level of expectations regarding new applications require a better understanding, controlling, mastering of basic processes governing atoms transport in the view of process optimization. This work consist in the study of transport of sputtered W atoms in direct current and high power impulse magnetron discharges (DC and HiPIMS). A tunable diode laser induced fluorescence technique (TD-LIF) has been developed, in order to measure W sputtered atom velocity distribution function. Measurements were calibrated using laser absorption and were corroborated by deposition rate. In DC, the study of the influence of discharge parameters (power, voltage, Ar/He gas mixture, and distance from target, etc.) highlighted spatial evolution of different regimes of transport: ballistic (energetic atoms), diffusive (thermalized atoms), and mixed (ballistic + diffusive). In HiPIMS, pulsed plasma required to develop a time resolved TD-LIF technique (TR-TDLIF). The additional degree of freedom, given by time dimension allowed for a better understanding of mixed transport which represents the most complicated situation. This technique allowed to measure the kinetic of sputtered W atoms while at the same time providing the possibility to separate characteristic time scales of different processes