Currently, organic electronics is one of the most expanding technology of semiconductor devices. This direction is rapidly developing due to the constant synthesis of new organic compounds and sophisticated advances in device engineering. Currently, organic materials are used in organic light-emitting diodes (OLEDs), organic thin-film transistors, solar cells and sensors. Low-cost manufacturing techniques such as wet casting or inkjet printing enable organic materials use in large-area and flexible electronic devices. Modern organic electronic materials are multifunctional – this enables not only to improve the material properties, but also to simplify the device architecture. However, the complexity of the molecular structure brings new problems associated with complex phenomena of the new multifunctional molecules -such as the formation of aggregates, intramolecular charge transfer, intramolecular torsion and others. Therefore, the control of the features of new multifunctional molecules is the main problem of organic electronics today. This work focuses on the control of photophysical characteristics of multifunctional organic emitters. Here we study aggregation induced emission and quenching of multifunctional molecular emitters and the possibilities to control these phenomena by optimizing functional properties of the film such as film forming properties, charge transfer, the emission efficiency, amplified spontaneous emission threshold and others. / Organinė elektronika pastaruoju metu yra viena sparčiausiai besiplėtojančių puslaidininkių prietaisų krypčių. Ši kryptis labai sparčiai vystoma dėl nuolat kuriamų naujų organinių junginių ir tobulėjančių inžinerijos galimybių. Šiuo metu organinės medžiagos naudojamos organiniuose šviestukuose (OLED), plonasluoksniuose tranzistoriuose, saulės celėse, jutikliuose ir kt. Organinės medžiagos įgalina gaminti didelio ploto bei lanksčius elektronikos prietaisus, gamybai pasitelkiant pigias gaminimo technologijas. Modernios organinės elektronikos medžiagos yra daugiafunkcinės – tai leidžia ne tik pagerinti medžiagos savybes, bet ir supaprastinti technologiją, kur viename sluoksnyje daugiafunkcinė molekulė atlieka keletą funkcijų. Tačiau molekulinės struktūros sudėtingėjimas iškelia naujas problemas susijusias su naujais sudėtingais reiškiniais daugiafunkciniame molekuliniame darinyje, tokiais kaip agregatų formavimas, vidujemolekulinė krūvio pernaša, vidujemolekulinė sąsūka ir kt. Todėl naujų daugiafunkcinių molekulinių darinių savybių optimizavimas yra aktuali nūdienos organinės elektronikos problema. Šiame darbe didžiausias dėmesys skiriamas daugiafunkcinių organinių spinduolių fotofizikinių savybių valdymui. Čia nagrinėjami daugiafunkcinių molekulinių spinduolių agregacijos nulemti reiškiniai ir jų valdymo galimybės, optimizuojant sluoksnio funkcines savybes tokias kaip plėvėdaros savybės, krūvio pernaša, emisijos našumas, sustiprintos savaiminės spinduliuotės slenkstis ir kt.

Over the past three decades in cellular neuroscience there has been a shift towards the view of the 'tripartite synapse', where, astrocytes -- as well as the pre-synapse and post-synapse -- are involved in synaptic signalling. The migration of astrocytes to form branched networks in the brain is, therefore, of great interest in understanding brain development and neuronal function. Migration is a complex interplay between cytoskeletal reorganisation and cell mechanical stiffness. In order to improve understanding of this process, correlative measurements of cytoskeletal organisation and mechanical stiffness are required. To investigate astrocyte migration a technique combining atomic force microscopy (AFM) with stimulated emission depletion (STED) microscopy was developed. First a custom STED microscope was developed. To facilitate the design of this system the theoretical performance of a range of STED techniques (cw-STED, time-gated STED, pulsed STED and RESOLFT) were compared, identifying that pulsed STED theoretically has the highest photon efficiency. A pulsed STED microscope, which uses adaptive optics, was then designed, developed and characterised. The microscope was found to achieve resolutions below 50 nm. The STED microscope was combined with a commercial AFM to study live cells. Using the recently developed SiR-actin and SiR-tubulin dyes and AFM probes optimised for live cell mechanical property studies, images of the actin and tubulin cytoskeleton were correlated with AFM topography and mechanical stiffness measurements. It was found that, in astrocytes, actin contributes significantly both to astrocyte stiffness and topography. Investigations of migrating cells showed differences in actin organisation and mechanical stiffness between the basis and leading edge of migration. A further study was performed, investigating the effects of the gap-junction protein connexin30, which is expressed during the early stages of brain development, on migration. This protein was found to inhibit the actin reorganisation and mechanical stiffness changes observed in basal conditions. Overall the combination of mechanosensitive AFM measurements with advanced microscopy, such as super-resolution, on live cells is a promising approach which will enable a range of investigations, for instance when studying cell structural remodeling during brain development or tumorigenesis.

Cette thèse porte sur les effets d'optique quantique avec des atomes artificiels semiconducteurs. Dans un premiers temps, on fait une étude théorique où un émetteur unique est couplé à un guide d'onde unidimensionnel. Ce système permets la propagation libre de la lumière en préservent la sensitivité au niveau d'un photon unique, ce que a motivé des propositions pour faire des portes logiques et des transistors au photon unique. Un schéma pour observer l'émission stimulée au niveau d'un photon unique dans cet environnement unidimensionnel est proposé, en utilisant un émetteur excité (e.g. une boîte quantique) et une pompage classique (laser). On montre que l'émission se produit dans le mode stimulée et que la population atomique fait des oscillations de Rabi classiques. Ensuite, la dynamique complètement quantique est décrite, où un paquet avec un seul photon interagit avec l'atome initialement excité. Dans cette nouvelle condition, la stimulation est irréversible, i.e., les populations atomiques ne réalisent pas des oscillations. Cet effet est optimal dans le cas où le paquet est trois fois plus court qu'un paquet spontanément émis par le même atome. On démontre comment utiliser l'émission stimulée irréversible optimale pour produire des clones quantiques universels. Le même dispositif peut être utilisé aussi bien pour produire des paires des photons complètement intriqués, si le paquet du photon initial est suffisamment étendu. Dans un deuxième moment, nous nous sommes intéressés aussi au spectre d'émission spontanée d'une boîte quantique semiconductrice en couplage faible avec une microcavité. Ce système mets en évidence l'effet d'alimentation de la cavité, où la boîte émet spontanément à la fréquence de la cavité, même si cela est bien désaccordé. L'influence des phonons pour le mécanisme d'alimentation de la cavité est analysée. Une importante distorsion du spectre apparent de la cavité, induit pour la présence des phonons, est démontrée. Les effets étudiés sont topiques et peuvent être implémenté avec des dispositifs semiconducteurs de l'état de l'art. / The thesis focuses on quantum optical effects in semiconducting artificial atoms. We first investigate theoretically a single emitter coupled to a one-dimensional waveguide. This system allows for light propagation while preserving sensitivity at the single-photon level, which has motivated proposals for quantum gates and single-photon transistors. A scheme to monitor stimulated emission at the single-photon level in this one-dimensional open space is proposed, using an excited emitter (e.g. a quantum dot) and a classical pump (laser). We show that light is emitted in the stimulating mode and that the atom performs classical Rabi oscillation. The fully quantum dynamics is also explored, where a single-photon packet interacts with an initially excited emitter. In contrast with the case of a classical pump, stimulation by a single photon is irreversible, i.e., no oscillation takes place. Stimulation is optimal for a packet three times shorter than the spontaneously emitted one. We show how this optimal irreversible stimulated emission can be applied to perform universal quantum cloning. The same device provides either optimal quantum cloning or maximally entangled photon pairs, depending only on the size of the incoming packet. In the second part of the thesis, we investigate the spontaneous emission spectrum of a semiconducting quantum dot weakly coupled to a microcavity. In particular, we address the problem of cavity feeding, where the quantum dot spontaneously emits photons at the frequency of an off-resonance cavity. The influence of phonons in the cavity feeding mechanism is analysed. An important distortion of the apparent cavity peak induced by the presence of phonons is demonstrated. These effects are topical and can be implemented in state-of-the-art semiconducting devices.

Submitted by Marco Antonio Oliveira da Silva (maosilva@ipen.br) on 2017-11-09T11:51:03Z No. of bitstreams: 0 / Made available in DSpace on 2017-11-09T11:51:03Z (GMT). No. of bitstreams: 0 / O tratamento utilizando Radioterapia em Arco Modulado Volumétrico é a modalidade mais moderna de radioterapia conformacional de forma que, com superposição de vários campos, as distribuições de dose forneçam uma perfeita conformação ao tumor, diminuindo a probabilidade de complicações nos tecidos normais adjacentes. Nesse sentido, muitos esforços estão sendo investidos para melhorar a conformidade de distribuição de dose, bem como a integração de técnicas de imagem para rastreamento de tumores e correção de variações inter e intrafração. Para isso, um intenso acompanhamento da qualidade dos processos e um programa de garantia de qualidade são fundamentais para a segurança dos pacientes e o cumprimento da legislação vigente; além do uso de diferentes metodologias de dosimetria para inter comparação e validação dos resultados. Este trabalho tem por objetivo avaliar e comparar o desempenho dos dosímetros OSL de óxido de alumínio (Al2O3:C) fabricados pela Landauer Inc. com os fabricados pela Rexon™ na dosimetria de feixes clínicos de fótons de energias altas empregados em radioterapia com tratamento em arco modulado volumétrico (VMAT) utilizando diferentes objetos simuladores. Os dosímetros foram caracterizados para radiação gama do 60Co e para feixes clínicos de fótons de 6 MV típicos de tratamentos por VMAT em condições de equilíbrio eletrônico e de dose máxima respectivamente. Testes de desempenho das leitoras TL e OSL utilizadas e repetibilidade das amostras foram avaliadas. Após realizados todos os testes, os dosímetros foram irradiados na simulação de diferentes tratamentos radioterápicos por VMAT e suas respostas comparadas ao sistema de planejamento. Todos os tipos de dosímetros apresentaram resultados satisfatórios na verificação das doses desse tipo de simulação de planejamento. Os dosímetros de Al2O3:C apresentaram resultados compatíveis entre si e validados pelos outros dosímetros e câmara de ionização. Em relação a melhor técnica, o sistema comercial OSL InLight apresenta maior praticidade e versatilidade para uso e aplicação na rotina clínica. / Dissertação (Mestrado em Tecnologia Nuclear) / IPEN/D / Instituto de Pesquisas Energéticas e Nucleares - IPEN-CNEN/SP

In recent years a number of cases of flight crew illumination by laser beam have been reported. Such events are considered dangerous for flight safety and for aviator´s health. If a human eye is illuminated by laser beam of high intensity such event can lead to temporary or permanent eye damage.

?-Conjugated systems have been the focus of study in recent years in order to understand their charge transport and optical properties for use in organic electronic devices, fluorescence bioimaging, sensors, and 3D optical data storage (ODS), among others. As a result, several molecular building blocks have been designed, allowing new frontiers to be realized. While various successful building blocks have been fine-tuned at both the electronic and molecular structure level to provide advanced photophysical and optoelectronic characteristics, the azulene framework has been under-appreciated despite its unique electronic and optical properties. Among several attributes, azulenes are vibrant blue naturally occurring hydrocarbons that exhibit large dipolar character, coupled with stimuli-responsive behavior in acidic environments. Additionally, the non-toxic nature and the accompanying eco-friendly feature of some azulenes, namely guaiazulene, may set the stage to further explore a more "green" route towards photonic and conductive materials. The first part of this dissertation focuses on exploiting guaiazulene as a natural building block for the synthesis of chromophores with varying stimuli-responsiveness. Results described in Chapter 1 show that extending the conjugation of guaiazulene through its seven-membered ring methyl group with aromatic substituents dramatically impacts the optical properties of the guaiazulenium carbocation. Study of these ?–stabilized tropilium ions enabled establishing photophysical structure-property trends for guaiazulene-terminated ?-conjugated analogs under acidic conditions, including absorption, emission, quantum yield, and optical band gap patterns. These results were exploited in the design of a photosensitive polymeric system with potential application in the field of three dimensional (3D) optical data storage (ODS). Chapter 2 describes the use of guaiazulene reactive sites (C-3 and C-4 methyl group) to generate a series of cyclopenta[ef]heptalenes that exhibit strong stimuli-responsive behavior. The approach presents a versatile route that allows for various substrates to be incorporated into the resulting cyclopenta[ef]heptalenes, especially after optimization that led to devising a one-pot reaction toward such tricyclic systems. Examining the UV-vis absorption profiles in neutral and acidic media showed that the extension of conjugation at C(4) of the cyclopenta[ef]heptalene skeleton results in longer absorption maxima and smaller optical energy gaps. Additionally, it was concluded that these systems act as sensitizers of a UV-activated (< 300 nm) photoacid generator (PAG), via intermolecular photoinduced electron transfer (PeT), upon which the PAG undergoes photodecomposition resulting in the generation of acid. In a related study, the guaiazulene methyl group at C-4 was employed to study the linear and nonlinear optical properties of 4-styrylguaiazulenes, having the same ?–donor with varying ?-spacer. It was realized that the conjugation length correlates with the extent of bathochromic shift of the protonated species. On the other hand, a trend of decreasing quantum yield was established for this set of 4-styrylguaiazulenes, which can be explained by the increasingly higher degree of flexibility. The second part of this dissertation presents a comprehensive investigation of the linear photophysical, photochemical, and nonlinear optical properties of diketopyrrolopyrrole (DPP)-based derivatives, including two-photon absorption (2PA), femtosecond transient absorption, stimulated emission spectroscopy, and superfluorescence phenomena. The synthetic feasibility, ease of modification, outstanding robustness, and attractive spectroscopic properties of DPPs have motivated their study for fluorescence microscopy applications, concluding that the prepared DPP's are potentially suitable chromophores for high resolution stimulated emission depletion (STED) microscopy.

Die vorliegende Arbeit beschäftigt sich mit optischen Untersuchungen von MBE-gewachsenen hexagonalen Gruppe-III-Nitridheterostrukturen. Dafür wird die Photolumineszenz von InGaN/GaN- und GaN/AlGaN-Mehrfachquantengrabenstrukturen umfangreich zeitintegriert und zeitaufgelöst studiert. Die Proben unterscheiden sich in den Dicken der Quantengräben und Barrieren (InGaN) bzw. in der kristallografischen Orientierung (AlGaN). Als Ergebnis der großen, für das Materialsystem charakteristischen, elektrostatischen Felder zeigen die konventionell [0001]-orientierten Heterostrukturen eine verringerte Übergangsenergie und längere Lebensdauern mit zunehmender Quantengrabenbreite und höherem Indiumgehalt in den Gräben. Der beobachtete Einfluss des Quantumconfined Stark-Effektes (QCSE) auf diese Größen kann auch durch Modellrechnungen quantitativ gezeigt werden. In der Arbeit wird erstmals eine umfangreiche optische Charakterisierung einer neuartigen [1-100]-orientierten GaN-Heterostruktur auf Gamma-LiAlO2 geboten. Zum Vergleich wird das Verhalten einer identisch aufgebauten, [0001]-orientierten Struktur auf SiC ebenfalls diskutiert. Die (1-100)-Probe ist in Wachstumsrichtung frei von elektrostatischen Feldern und unterscheidet sich damit deutlich von den herkömmlichen Nitridstrukturen mit [0001]-Orientierung, deren interne Felder im MV/cm-Bereich liegen. Die spektrale Lage der Photolumineszenz bei geringen Anregungsdichten bestätigt die Flachbandsituation in der Probe. Aufgrund des bei dieser Probe nicht auftretenden QCSE ist hier eine deutlich verkürzte Lebensdauer festzustellen. Entsprechend der Auswahlregeln für hexagonales GaN weist die [1-100]-orientierte Probe eine sehr starke Polarisation der Photolumineszenz bezogen auf die Lage der [0001]-Achse auf. Die geringe Abweichung des ermittelten Polarisationsgrades von der, für A-Exzitonen in Volumen-GaN zu erwartenden, totalen Polarisation kann durch das Konfinement in den Quantengräben erklärt werden. Ein Schwerpunkt der Arbeit ist die Untersuchung der Rekombinationsmechanismen der Proben in Abhängigkeit von der induzierten Ladungsträgerdichte. Diese wird in einem Bereich von sehr geringer Dichte bis über die Mottdichte variiert. Eine Abschirmung der elektrostatischen Felder mit zunehmender Ladungsträgerdichte wird festgestellt. Dabei kann bei einer InGaN/GaN-Probe mit 3.1 nm breiten Gräben gezeigt werden, dass neben den internen piezoelektrischen Feldern die in der Literatur diskutierte Lokalisation von Exzitonen an Stöchiometrieschwankungen des Quantengrabens entscheidend die Rekombinationsdynamik in der Probe beeinflusst. Dies spiegelt sich in einer Abhängigkeit der Quantengrabeneigenschaften von den Anfangsbedingungen des Abklingprozesses und damit einem nicht existierenden allgemein gültigen Zusammenhang zwischen der Lebensdauer und der Ladungsträgerdichte wider. Die zeitaufgelösten Lumineszenzspektren der InGaN/GaN-Strukturen zeigen als Folge der mit höheren Ladungsträgerdichten zunehmenden Abschirmung eine verringerte Lebensdauer durch die vergrößerte Überlappung von Elektron- und Lochwellenfunktionen. Aufgrund der wieder abnehmenden Abschirmung während des Rekombinationsprozesses verändert sich die Lebensdauer im Laufe der Zeit. Gleichzeitig kommt es zu einer Verringerung der Übergangsenergie des Lumineszenzmaximums durch den weniger abgeschirmten QCSE. Die zeitintegrierten Photolumineszenzspektren zeigen ebenfalls eine deutliche Abhängigkeit von der Anregungsdichte. Während bei der feldfreien (1-100)-Probe keine Kompensationseffekte erwartet werden, weisen die Resultate für die konventionellen Proben auf einen, die Ladungsträgerdichte wesentlich beeinflussenden Effekt hin. Die Abhängigkeit der Intensität der Photolumineszenz von der Ladungsträgerdichte deutet ab einer bestimmten Anregungsdichte auf einen zusätzlichen Prozess, welcher die Ladungsträgerdichte reduziert, sich aber nicht im Lumineszenzspektrum widerspiegelt. Als Erklärung dafür wird die Absorption von stimulierter Emission im Substrat oder in der Pufferschicht angenommen. Bei den InGaN-Proben schiebt die Übergangsenergie mit höheren Dichten zu größeren Energien und nähert sich bis 10e5 W/cm2 einem Sättigungswert an. Dieser Wert entspricht trotz Dichten oberhalb der Mottdichte noch nicht der Flachbandsituation bei vollständig kompensierten internen Feldern. Als Ursache dafür wird der genannte, bei hohen Ladungsträgerdichten einsetzende Konkurrenzprozess gesehen. Bei den GaN/AlGaN-Proben kann im untersuchten Bereich der Anregungsdichte keine spektrale Verschiebung im Photolumineszenzspektrum festgestellt werden. Zum ersten Mal werden experimentelle Untersuchungen zur stimulierten Emission einer [1-100]-orientierten GaN-Probe durchgeführt und das optische Gewinnspektrum analysiert. Die Messungen zeigen einen maximalen Nettogewinn von ca. 50 1/cm. Aus der rechnerischen Analyse der Modenausbreitung lässt sich dafür ein Materialgewinn für GaN(1-100) von 1.1x10e4 1/cm ableiten. Die Ergebnisse zeigen außerdem, dass die Rekombination eines Elektron-Loch-Plasmas der Mechanismus für die stimulierte Emission ist. Dies entspricht dem überwiegenden Teil der in der Literatur veröffentlichten Beobachtungen für [0001]-orientierte Nitridstrukturen. Ein direkter Vergleich mit der parallel untersuchten GaN/AlGaN(0001)-Probe ist aufgrund der starken Substratabsorption nicht möglich. Es zeigt sich, dass für [1-100]-orientierte GaN-Heterostrukturen gute Ausgangsbedingungen für die Realisierung von Laserdioden gegeben sind. Zu den untersuchten Heterostrukturen wird die Wellenführung in den Proben simuliert. Bei den auf SiC gewachsenen Schichten werden die sich ausbreitenden Moden wegen des deutlich höheren Brechungsindexes des Substrates vornehmlich dort geführt. Die Überlappung der Moden mit dem aktiven Schichtpaket ist äußerst gering. Es ist für die Proben auf SiC kein optischer Gewinn zu erwarten. Die [1-100]-orientierte GaN/AlGaN-Probe besitzt eine deutlich bessere Wellenführung, da das LiAlO2 einen vergleichsweise kleinen Brechungsindex besitzt. Es wird ein Zusammenhang zwischen experimentell ermitteltem optischen Gewinn und dem Materialgewinn gebildet und das Ergebnis mit Rechnungen aus der Literatur verglichen. Ein Vorschlag für eine optimierte Wellenführung in allen untersuchten Proben wird gegeben. / In this thesis, the optical properties of molecular beam epitaxy grown hexagonal group-III nitride heterostructures are studied. The photoluminescence (PL) characteristics of InGaN/GaN and GaN/AlGAN multiple quantum well structures are investigated by time-integrated and time-resolved measurements. The analyzed specimens differ in the width of the quantum wells and barriers (InGaN) and in the crystallographic orientation (AlGaN), respectively. As a result of the large characteristic electrostatic fields, conventional [0001]-oriented heterostructures show a reduced transistion energy and longer lifetimes with increasing well width and higher Indium content in the wells. The observed impact of the Quantum Confined Stark Effect (QCSE) on these quantities is quantitatively shown in model calculations. In this work, a first extensive optical characterization of a novel [1-100]-oriented GaN heterostructure grown on Gamma-LiAlO2 is presented. For comparison, an identically designed [0001]-oriented structure on SiC is discussed. The (1-100)-grown specimen is free of electrostatic fields along the growth direction and shows a significant different behavior than conventional [0001]-oriented nitrides with internal fields of several MV/cm. The existing flat band conditions are confirmed by the spectral position of the PL at low excitation densities. Due to the non-existing QCSE at this specimen an significantly reduced lifetime is observed. A strong polarization of the PL is observed for the [1-100]-oriented sample, following the selection rules for hexagonal GaN. The small deviation of the degree of polarization from unity, which is expected in bulk GaN, is attributed to the quantum confinement in the heterostructures. One main topic of this thesis is the analysis of the recombination mechanisms of the specimens depending on the induced carrier density. The carrier density is varied from very low upto densities above the mott density. A screening of the electrostatic fields is observed with increasing carrier density. It is shown, that an InGaN/GaN heterostructure with a well width of 3.1 nm not only is influenced by internal piezoelectric fields but also the localization of excitons at stoichiometric inhomogenities in the quantum well is playing an important role for the recombination dynamics of the structure. This can be seen in the dependence of the decay process on the starting conditions. No general correlation is existing between lifetime and carrier density. Time-resolved PL measurements on InGaN/GaN heterostructures show a reduced lifetime due to an increased overlap of the electron and hole wave functions as a result of the increased screening at increasing carrier densities. During the recombination process the screening decreases again and the lifetime is changed with time. Simultaneously the transistion energy of the PL maximum is reduced by the less screened QCSE. A distinct dependence of the time-integrated PL spectra on the excitation density was also found. While there are no compensation effects expected at the (1-100) structure, which is free of electrostatic fields, the results for the conventional specimens point to an effect which influences the carrier density essentially. The dependence of the PL intensity on the carrier density points to an additional process, which comes into play at a special excitation density. This process reduces the carrier density but is invisible in the PL spectra. As an explanation we assume, that light of stimulated emission is absorbed either in the substrate or in the buffer layer. The transistion energy of the InGaN structures increases with increasing excitation density and reaches a saturation energy at a density of 10e5 W/cm2. Although this density is larger than the mott density, the transistion energy is not equivalent with a transition energy at flat band conditions. The origin of the observed effect is assumed to be the rival process, mentioned above, which comes into play at high carrier densities. For the GaN/AlGaN heterostructures no spectral shift of the PL was observed within the variation of excitation density. For the very first time, the stimulated emission of an [1-100]-oriented GaN structure was analyzed. A maximum netto gain of 50 1/cm was observed. From calculations of the mode propagation, a material gain of 1.1x10e4 1/cm is derived for GaN(1-100). Additionally from the results follows that the recombination of an electron-hole-plasma is the mechanism of the stimulated emission. This is in accordance with most of the published observations for [0001]-oriented GaN heterostructures. A direct comparison of both, the [1-100]-oriented specimen and the GaN/AlGaN(0001) structure, which was investigated parallel, was not possible. The reason for that is the strong absorption of the SiC substrate of the latter mentioned structure. It is generally shown, that [1-100]-oriented GaN heterostructures offers good starting conditions to realize laser diodes. The wave guiding was simulated for all of the used specimens. At structures grown on SiC the propagating modes are mainly guided in the substrate due to the larger refractive index of SiC with respect to GaN. The overlap of the amplified mode and the active layer is very small. No optical gain is expected for these structures. The [1-100]-oriented GaN/AlGaN structure shows a significantly improved wave guiding, due to the small refractive index of LiAlO2 in comparison with GaN. A correlation between the experimentally observed optical gain and the material gain is formed and the results are compared with the literature. A suggestion for an optimized wave guiding in all investigated specimens is given.

[pt] A conversão de comprimento de onda de sinais por meio de técnicas totalmente ópticas é um assunto inovador e de extrema necessidade para as redes com roteamento de comprimento de onda; a técnica de conversão de comprimentos de onda por modulação de ganho cruzado é uma das mais simples, em princípio, que atinge este objetivo. Duas modalidades são apresentadas neste trabalho: a clássica, também conhecida por pump & probe, e uma nova, a de modulação de ganho cruzado do espectro da ASE em um SOA. A técnica pump e probe é apresentada, assim como um experimento baseado nesta. A técnica de modulação de ganho cruzado da ASE é explorada como alternativa à técnicas de conversão de comprimento de onda que necessitam de outra fonte de luz, para a qual o sinal deve ser convertido. Na modulação de ganho cruzado da ASE, o sinal é convertido de luz coerente para incoerente; e, uma vez modulado o espectro da ASE do SOA, este é filtrado no comprimento de onda que se deseja obter a conversão. Assim, este conversor pode ser sintonizável, já que não é um parâmetro de entrada que define o comprimento de onda convertido, e sim um filtro passa-faixa ao fim do dispositivo. Para se avaliar os tempos de resposta da técnica, a conversão é feita utilizando-se pulsos elétricos ultracurtos (50 ps), o que não havia sido feito até então. / [en] Wavelength conversion of optical signals by all-optical techniques is an innovative and necessary technology for wavelength routed networks in the near future; the cross-gain modulation method is one of the simplest, in form, to attain this goal. Two categories of the main technique are presented: the classic, also known as pump and probe, and a novel one, named cross- gain modulation of the ASE spectrum of a SOA. The cross-gain modulation of the ASE spectrum is explored here as an alternative to previous all-optical wavelength conversion techniques that require another light source, to which the incoming signal is to be converted; the signal is converted from coherent to incoherent light; and, once modulated throughout the SOA`s ASE spectrum, the signal is then filtered at the central wavelength it is desired to be converted. Thus, this particular wavelength converter can be tunable, in the sense that it is reconfigurable, since a band pass filter located at the end of the device selects what wavelength the signal will be converted to. In order to assess the response times of the technique, the conversion is made for ultra short electrical pulses (50 ps), a feature unknown until now.

Submitted by Pedro Silva Filho (pfsilva@ipen.br) on 2017-11-17T16:39:31Z No. of bitstreams: 0 / Made available in DSpace on 2017-11-17T16:39:31Z (GMT). No. of bitstreams: 0 / A radiação ionizante é amplamente utilizada em diversas áreas na indústria e na medicina. No campo da medicina, a radiação ionizante é utilizada tanto para fins terapêuticos como para fins diagnósticos, abrangendo assim um grande intervalo de doses de diferentes tipos de radiações. Para certificar que a finalidade da prática esteja sendo alcançada, são necessários estudos detalhados de detectores e dispositivos que atendam aos diferentes tipos de radiações. Neste trabalho foi realizado um estudo das características dosimétricas de amostras de BeO em feixes padronizados de radiodiagnóstico convencional, mamografia e tomografia computadorizada, utilizando as técnicas de termoluminescência (TL) e luminescência opticamente estimulada (OSL) e propondo um sistema adequado para sua utilização em dosimetria de feixes. Os principais resultados obtidos foram: alta sensibilidade à luz branca durante a irradiação, boa reprodutibilidade das respostas TL e OSL (coeficientes de variação inferiores a 5%), parâmetros cinéticos correspondentes aos valores obtidos em todos os métodos testados, sem fading dentro do período estudado para ambas as técnicas. As características dosimétricas obtidas neste trabalho mostram a possibilidade de aplicação das amostras de BeO em dosimetria da radiação X, considerando os intervalos de dose empregados, pelas técnicas de TL e OSL. Assim, as amostras de BeO apresentaram sua utilização potencial para dosimetria de feixes de radiodiagnóstico convencional, mamografia e tomografia computadorizada. / Dissertação (Mestrado em Tecnologia Nuclear) / IPEN/D / Instituto de Pesquisas Energéticas e Nucleares - IPEN-CNEN/SP

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