Orientadores: Sigmar Maurer Deckmann, Fernando Pinhabel Marafão / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e Computação / Made available in DSpace on 2018-08-07T01:28:16Z (GMT). No. of bitstreams: 1 MoralesParedes_HelmoKelis_M.pdf: 3000642 bytes, checksum: a52059dba0b167ed3326ffa3bf6f7d5f (MD5) Previous issue date: 2006 / Resumo: Este trabalho visa a contribuir para os estudos de instrumentação de sistemas de potência e monitoramento de Qualidade da Energia Elétrica (QEE), discutindo a importância da referência da tensão, de forma a permitir relacionar os efeitos dos distúrbios com o verdadeiro impacto que causam sobre as cargas. Esta correlação ainda é um ponto pouco estudado no âmbito da QEE. Considerando o cenário do ponto de vista de teoria de potência e qualidade da energia elétrica, inicialmente serão apresentadas as técnicas de medição das tensões, fazendo uma análise crítica, mostrando suas convergências, particularidades e deficiências. Por outro lado, será mostrado que a escolha da referência de tensão, leva a diferentes equacionamentos para a potência aparente e o fator de potência em sistemas com formas de onda não-senoidais e/ou assimétricas. Essas divergências têm suscitado discussões em nível internacional sobre a forma mais adequada de medição. Estudos sobre alguns indicadores de QEE ilustram como a escolha da referência de tensão influencia na avaliação da distorção harmônica total, do fator de desequilíbrio e de uma VTCD, especialmente em sistemas trifásicos com condutor de retorno (4 fios). Finalmente, através do Teorema de Blakesley, será apresentada uma metodologia, que permite associar as medidas de tensão relativas ao condutor neutro, com as medidas com referência no ponto "zero virtual", de modo que possam ser utilizadas pelos fabricantes dos equipamentos, pelas concessionárias de energia elétrica e pelos consumidores em geral / Abstract: This dissertation presents a contribution to the study of power quality monitoring and power system' s instrumentation, discussing the importance of the voltage reference and aiming to relate the voltage disturbance with the true impacts they cause on electrical loads. The establishment of a clear relationship between them is still not a commonly studied subject on power quality. Considering the point of view of power theory and power quality, initially this work presents the usual measurement techniques of voltages, making a critical analysis, showing its validity, particularities and deficiencies. On the other hand, it will be shown that the choice ofthe voltages referential leads to different equations for the apparent power and the power factor in systems with non-sinusoidal and/or unbalanced waveforms. These questions have promoted long debates in international level about the most suitable form of measurement and calculation. Studies about some power quality indices, will illustrate as the choice of the voltage reference influences the evaluation of the total harmonic distortion, unbalance factors and voltage sags and swells, especially in three-phase systems with return conductor (4 wires-system). Finally, based on Blakesley's Theorem, a methodology is presented that allows to associate the related neutral conductor measures of voltage to the measurements to the "zero virtual" point reference, in such way that can be used by the manufacturers of the equipments, the electric energy utilities and end consumers in general / Mestrado / Energia Eletrica / Mestre em Engenharia Elétrica

Grâce au confort d’utilisation qu’elles procurent, les technologies sans fil se retrouvent aujourd’hui dans un vaste panel d’applications. Ainsi le nombre d’éléments de transmission/réception radio se multiplie. Aujourd’hui pour réduire les consommations des éléments radio, il faut les rendre davantage efficaces notamment pour la partie réception. En effet, pour les communications asynchrones, les récepteurs consomment inutilement de l’énergie à attendre qu’une transmission soit faite. Dans l’objectif de réduire ce gaspillage d’énergie, des nouveaux standards ont vu le jour tel que le Zigbee et le Bluetooth Low Energy. Les performances en consommation procurées par ces deux standards résident sur leur fonction périodique à très faible rapport cyclique. Une nouvelle solution émergente pour réduire drastiquement la consommation des récepteurs en les rendant plus efficaces est l’utilisation de récepteur d’activation. Les récepteurs d’activation ou récepteur de réveil sont des récepteurs simples ce qui leur permet d’atteindre une ultra basse consommation uniquement en charge de guetter l’arrivée d’une trame et de réveiller le récepteur principal, placé en veille au préalable, pour traitement de cette dernière. Le récepteur d’activation proposé ici a été réalisé dans la technologie CMOS 160 nm de NXP. Il offre une sensibilité de -54 dBm, pour une consommation moyenne de 35 μA, prodiguant une portée de 70m à 433,92 MHz pour une puissance de 10 dBm émis. Ce récepteur ASK se distingue des autres récepteurs d’activation par le système de calibration breveté avec ajustement automatique la tension de référence requise pour la démodulation. Ce système rend le circuit robuste au problème d’offset DC et ne consomme aucun courant lorsque le circuit est en écoute. Le récepteur d’activation reconnaît un code de Manchester de 24 bits à 25 kbps, programmable grâce à une interface SPI. / Wireless technologies are now widespread due to the easiness of use they provide. Consequently, the number of radio devices increases. Despite of the efforts to reduce radio circuits power consumption as they are more and more numerous, now they must achieve ultra-low power consumption. Today, radio devices are made more efficient to reduce their power consumption especially for the receiving part. Indeed, for asynchronous communication, a lot of energy is wasted by the receiver waiting for a transmission. In order to avoid this waste, new standards have been created such as Zigbee and Bluetooth Low Energy. Due to periodic operation with ultra-low duty cycle, they provide ultra-low power consumption. Another solution to drastically reduce the power consumption has emerged, wake-up receiver. Wake-up receivers are based in simple architecture to provide ultra-low power consumption, they are only in charge to wait for a frame and when it occurs, wake-up the main receiver put in standby mode before that. The proposed wake-up receiver has been designed in NXP CMOS technology 160 μm. It provides a-54 dBm sensitivity, consuming 35 μA which allows a 70m range considering a 10 dBm emitter at 433,92 MHz. This wake-up receiver operates with ASK modulation, compared to others it provides a smart patented calibration system to get the necessary reference voltage for demodulation. This mechanism provide DC offset robustness and does not drain any current while the wake-up receiver is operating. To wake up the main receiver a 24 bits programmable Manchester code is required. This code at 25 kbps is programmable by the use of an SPI interface.

The aim of this thesis is design of adjustable switched mode power supply with symmetrical output of 25 V, and switched mode power supply with fixed output voltage of 5 V. Required maximum output current of each outputs is 3 A. At the beginning of the paper function of the basic SMPS topologies is described. Next all reqiured SMPSs are designed and chosen parts of the design are simulated. In the second half of the thesis assembly and testing of PCB are described as well as functions of programs. Last chapter contains results of meassurement of power supply paramters.

This diploma thesis deals with the design of eight-bit digital to analog coverter with fully differential outputs in technology I3T25 of ON Semiconductor company. The work contains the description of basic structures and characteristics of digital to analog converters. The main focus of the work is to design a converter and auxiliary circuits at the transistor level. The functionality of designed circuits is verified by simulation environment Cadence.

Les capteurs d’images CMOS sont de plus en plus utilisés dans le domaine industriel : la surveillance, la défense, le médical, etc. Dans ces domaines, les capteurs d?images CMOS sont exposés potentiellement à de grandes variations de température. Les capteurs d?images CMOS, comme tous les circuits analogiques, sont très sensibles aux variations de température, ce qui limite leurs applications. Jusquà présent, aucune solution intégrée pour contrer ce problème n’a été proposée. Afin de remédier à ce défaut, nous étudions, dans cette thèse, les effets de la température sur les deux types d?imageurs les plus connus. Plusieurs structures de compensation sont proposées. Elles reprennent globalement les trois méthodes existantes et jamais appliquées aux capteurs d’images. La première méthode utilise une entrée au niveau du pixel qui sera modulée en fonction de l’évolution de la température. La deuxième méthode utilise la technique ZTC (Zero Temperature Coefficient). La troisième méthode est inspirée de la méthode de la tension de référence bandgap. Dans tous les cas, nous réduisons de manière très intéressante l’effet de la température et nous obtenons une bonne stabilité en température de -30 à 125°C. Toutes les solutions proposées préservent le fonctionnement initial de l’imageur. Elles n’impactent également pas ou peu la surface du pixel / CMOS image sensors find widespread use in various industrial applications including military, surveillance, medical, etc. In these applications, CMOS image sensors are often exposed to large temperature variations. As analog circuits, these CMOS image sensors are very sensitive to temperature variations, which limit their applications. Until now, no integrated solution for this problem has been proposed. To solve this problem, we study, in this thesis, the temperature effects on the two most known types of CMOS image sensors. Several compensation structures are proposed. They generally return to the three existing methods and never applied to image sensors. The first method uses an entrance at the pixel level to be adjusted according to changes in temperature. The second method uses the ZTC (Zero Temperature Coefficient) technique. The third method is based on the method of the bandgap voltage reference. In all cases, we reduce a very interesting way the temperature effect and we get a good temperature stability of the sensor from -30 to 125°C. All the solutions preserve the initial operation of the imager. They also affect a little or not the surface of the pixel.

The traditional radiation testing of space electronics has been used for more than fifty years to support the radiation hardness assurance. Its typical goal is to ensure reliable operation of the spacecraft in the harsh environment of space. This PhD research looks into the radiation testing from a different perspective; the goal is to develop radiation testing methods that are focused not only on the reliability of the components but also on a continuous radiation-induced degradation of their performance. Such data are crucial for the understanding of the impact of radiation on the measurement uncertainty of data acquisition systems onboard research space missions.

State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented.

Master’s thesis deals with design of laboratory supply with precise voltage and current measuring. At the beginning it presents properties, advantages and disadvantages of linear and switching supplies, based on these facts it chooses a linear type of regulator. The design continues with detailed description of power and control analog and digital circuits. The thesis includes description of taking control over the supply from the front panel or through computer. The last part is devoted to measurement results and to presentation of some static and dynamic parameters of the designed supply.