Este trabalho teve por objetivo o desenvolvimento de uma metodologia de análise estrutural de heteroestruturas, ou seja, estruturas formadas pela combinação de materiais diferentes depositados em camadas alternadas. O trabalho focalizou aspectos não apenas referentes às técnicas de difração de raios X, comumente utilizadas na caracterização estrutural destes novos materiais, mas também se concentrou no desenvolvimento de cálculos teóricos da intensidade difratada pelos raios X, os quais, comparados com os dados experimentais, dão informação precisa acerca do que poderíamos denominar qualidade estrutural. Uma comparação entre resultados obtidos com a teoria Cinemática Dinâmica foram também explorados e o alcance das duas teorias foi discutido. Este procedimento, embora tenha sido aplicado para a análise de heteroestruturas a base de semicondutores cristalinos, pode também ser aplicado, por exemplo, ao estudo de heteroestruturas magnéticas. É sempre fundamental no processo de desenvolvimento de novos materiais caracterizar as amostras após o crescimento, a fim de comparar os resultados experimentais com os valores nominais obtidos do procedimento de deposição. Em particular, neste trabalho, a caracterização estrutural de super-redes deformadas de Si 1-xGex/Ge e Si/Ge, crescidas sobre substratos de Ge e Si, respectivamente, realizou-se através do uso de técnicas não destrutivas de difração de raios X, envolvendo a medição dos parâmetros próprios das super-redes como: período, número de camadas atômicas, parâmetros de rede e deformação. / The aim of this work was the development of a methodology for the structural analysis of heterostructures, i. e., structures formed by the combination of different materials, deposited as alternate layers. The work focused on aspects not only related to x-ray diffraction techniques, usually utilized for the structural characterization of these new materials, but also it concentrated on the development of theorical calculations of the x-ray diffracted intensity, which were compared with experimental data in order to determine the so-called structural quality. The results obtained with the Kinematical and Dinamical X-ray Diffraction theories were explored and the scope of both theories was discussed. Even though this procedure was applied to the analysis of heterostrutures based on crystalline semiconductors, it also can be used, for example, to the study of magnetic multilayers. It is always fundamental in the development process of new materials to characterize the samples after growth, in order to compare the experimental results with the nominal values obtained by the deposition procedure. ln particular, in this work, the structural characterization of Si1-xGex /Ge and Si/Ge strained superlattices, deposited on Ge and Si substrate, respectively, was performed by means of non-destructive x-ray diffraction techniques, measuring superlattices parameters as: periodicity, number of atomic layers, lattice parameters and strain.

Wan Shan Mei. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract / Acknowledgements / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- History of Semiconductor Optical Amplifier In Optical Networks --- p.1 / Chapter 1.2 --- Comparisons of SOAs With Other Amplifiers --- p.3 / Chapter 1.2.1 --- Erbium Doped Fiber Amplifier (EDFA) --- p.3 / Chapter 1.2.2 --- Raman Amplifiers --- p.5 / Chapter 1.2.3 --- Parametric Amplifiers --- p.7 / Chapter 1.3 --- The Need of SO A for Wavelength Conversion in Optical Networks --- p.8 / Chapter 1.3.1 --- General Applications of SOAs --- p.8 / Chapter 1.3.2 --- Wavelength Conversion of SOAs --- p.9 / Chapter 1.4 --- Cross Gain Modulation (XGM) --- p.11 / Chapter 1.5 --- Cross Phase Modulation (XPM) --- p.13 / Chapter 1.6 --- Four Wave Mixing (FWM) --- p.16 / Chapter 1.7 --- Bi-refringence Switching --- p.19 / Chapter 1.8 --- Conclusion --- p.22 / Chapter 1.9 --- References --- p.22 / Chapter Chapter 2 --- Physics of Semiconductor Optical Amplifier and Background of Quantum Well Semiconductor Optical Amplifier / Chapter 2.1 --- Physics of Semiconductor Optical Amplifier --- p.26 / Chapter 2.1.1 --- General Structure of SOAs --- p.26 / Chapter 2.1.2 --- Principles of Optical Amplification --- p.27 / Chapter 2.1.3 --- Material Gain Coefficient --- p.29 / Chapter 2.1.4 --- Bulk Material Properties of SOAs --- p.32 / Chapter 2.1.5 --- Spontaneous Emission Noise --- p.34 / Chapter 2.1.6 --- Polarization Sensitivity --- p.37 / Chapter 2.1.7 --- Dynamics Effects --- p.38 / Chapter 2.2 --- Background of Quantum Wells Semiconductor Optical Amplifier --- p.38 / Chapter 2.2.1 --- Definition of Quantum Well SOAs --- p.38 / Chapter 2.2.2 --- Different Types of Quantum Well SOAs --- p.39 / Chapter 2.2.3 --- Quantization of the Conduction Band and Valence Band --- p.40 / Chapter 2.3 --- Comparison Between Bulk and Quantum Well SOAs --- p.44 / Chapter 2.3.1 --- Gain Bandwidth --- p.44 / Chapter 2.3.2 --- Polarization Dependence --- p.44 / Chapter 2.3.3 --- Saturation Output Power --- p.45 / Chapter 2.4 --- Conclusion --- p.46 / Chapter 2.5 --- References --- p.46 / Chapter Chapter 3 --- Wideband Wavelength Conversion by XGM in Asymmetrical Multiple Quantum Well Semiconductor Optical Amplifier (AMQW-SOA) / Chapter 3.1 --- Background of Wideband Asymmetrical Multiple Quantum Well Semiconductor Optical Amplifier --- p.47 / Chapter 3.1.1 --- Sequence Influence of Non-identical InGaAsP Quantum Wells on SO A Broadband Characteristics --- p.47 / Chapter 3.1.2 --- Influence of Separate Confinement Heterostructure on Emission Bandwidth InGaAsP SOAs --- p.54 / Chapter 3.2 --- Wideband Wavelength Conversion --- p.58 / Chapter 3.2.1 --- First Experiment of Wideband Wavelength Conversion from 1.5 μm to 14 μm by XGM in AMQW-SOA --- p.62 / Chapter 3.2.2 --- Second Experiment of Wideband Wavelength Conversion from 1.5 μm to 1.4μm by XGM with 2.5 Gbit/s in AMQW-SOA --- p.64 / Chapter 3.2.3 --- Third Experiment of Investigation of Wavelength Conversion from 15 μm to 1.5 μm/1.3 μm by XGM in AMQW-SOA --- p.67 / Chapter 3.3 --- Conclusion --- p.69 / Chapter 3.4 --- References --- p.71 / Chapter Chapter 4 --- Wavelength Conversion by Birefringence Switchingin Asymmetrical Multiple Quantum Well Semiconductor Optical Amplifier (AMQW-SOA) / Chapter 4.1 --- First Experiment of Wideband Wavelength Conversion from 1.5 μm to 1.4 μm by Birefringence Switching in AMQW-SOA --- p.74 / Chapter 4.2 --- Second Experiment of Investigation of Wavelength Conversion from 1.5 μm to 1.5μm by Birefringence Switching in AMQW-SOA --- p.76 / Chapter 4.3 --- Conclusion --- p.78 / Chapter 4.4 --- References --- p.79 / Chapter Chapter 5 --- Asymmetrical Multiple Quantum Well Semiconductor Optical Amplifier (AMQW-SOA) for Pattern-Effect Free Gain / Chapter 5.1 --- Examples Methods of Pattern Effect Compensation --- p.81 / Chapter 5.1.1 --- Suppression of Pattern Dependent Effects from a Semiconductor Optical Amplifier using an Optical Delay Interferometer (ODI) / Chapter 5.1.2 --- Acceleration of Gain Recovery in QD-SOA --- p.84 / Chapter 5.2 --- Background Theory of Quantum Well Reservoirs and Carrier Transit Time --- p.87 / Chapter 5.3 --- First Experiment of Pattern Effect Free Amplification in AMQW-SOA --- p.92 / Chapter 5.4 --- Second Experiment of Pattern Effect Free Amplification in AMQW-SOA --- p.97 / Chapter 5.5 --- Conclusion --- p.102 / Chapter 5.6 --- References --- p.103 / Chapter Chapter 6 --- Conclusion and Future Work / Chapter 6.1 --- Conclusion --- p.105 / Chapter 6.2 --- Future Work --- p.108 / Appendix Butterfly Photonic Packaging --- p.109

Iu Kwan Sai = 以光致發光譜和高解析度X射線衍射譜研究砷銻化鎵外延層和量子井 / 姚昀樨. / On t.p. "̳x" is subscript. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2003. / Includes bibliographical references (leaves 93-95). / Text in English; abstracts in English and Chinese. / Iu Kwan Sai = Yi guang zhi fa guang pu he gao jie xi du X she xian yan she pu yan jiu shen ti hua jia wai yan ceng he liang zi jing / Yao Yunxi. / ACKNOWLEDGMENTS --- p.i / ABSTRACT --- p.ii / TABLE OF CONTENTS --- p.v / LIST OF TABLES --- p.vii / LIST OF FIGURES --- p.viii / Chapter 1. --- INTRODUTION --- p.1 / Chapter 1.1 --- Motivations --- p.1 / Chapter 1.2 --- Historical Works --- p.1 / Chapter 1.3 --- This Study --- p.3 / Chapter 1.4 --- Growth Conditions of GaAs1-xSbx Alloy --- p.4 / Chapter 2. --- EXPERIMENTAL PROCEDURES --- p.5 / Chapter 2.1 --- High Resolution X-Ray Diffraction (HRXRD) --- p.5 / Chapter 2.1.1 --- The Use of HRXRD --- p.5 / Chapter 2.1.2 --- Setup of the High Resolution X-Ray Diffractometer --- p.7 / Chapter 2.1.3 --- Types of Measurements --- p.8 / Chapter 2.2 --- Photoluminescence (PL) Spectrometer --- p.10 / Chapter 2.2.1 --- The Use of PL --- p.10 / Chapter 2.2.2 --- Setup of PL spectrometer --- p.10 / Chapter 2.2.3 --- types of Measurements --- p.13 / Chapter 3. --- CHARACTERIZATION --- p.14 / Chapter 3.1 --- High Resolution X-Ray Diffraction (HRXRD) --- p.14 / Chapter 3.1.1 --- Principal Scattering Geometries --- p.14 / Chapter 3.1.2 --- Strains in the Epitaxial Layer --- p.16 / Chapter 3.1.3 --- Lattice Parameter --- p.21 / Chapter 3.1.4 --- Sb Composition --- p.24 / Chapter 3.1.5 --- Determination of Thickness --- p.24 / Chapter 3.2 --- Photoluminescence (PL) --- p.25 / Chapter 3.2.1 --- Basic Theory of PL --- p.25 / Chapter 3.2.2 --- Strain and Temperature Effect --- p.26 / Chapter 3.2.3 --- Type I and Type II PL --- p.27 / Chapter 3.2.4 --- The Energy Gap of GaAs1-xSbx --- p.28 / Chapter 4. --- RESULTS AND DISCUSSION --- p.31 / Chapter 4.1 --- Direct Analysis of HRXRD Rocking Curves --- p.31 / Chapter 4.1.1 --- GaAs1-xSbx / GaAs Quantum Wells (QWs) --- p.31 / Chapter 4.1.2 --- GaAs1-xSbx /InP Epitaxial Layers --- p.42 / Chapter 4.2 --- Computer Simulation of HRXRD --- p.51 / Chapter 4.2.1 --- Simulation Theory --- p.51 / Chapter 4.2.2 --- Simulation of Rocking Curves --- p.51 / Chapter 4.3 --- Room Temperature PL of GAAs1-xSBx Quantum Wells and Epitaxial Layers --- p.66 / Chapter 4.4 --- Low Temperature (LT) PL of GAAs1-xSBx Quantum Wells and Epitaxial Layers --- p.75 / Chapter 4.5 --- Excitation Power Dependent (PD) PL of GAAs1-xSBx Quantum Wells and Epitaxial Layers --- p.78 / Chapter 4.6 --- Temperature Dependent (TD) PL of GAAs1-xSBx Quantum Wells and Epitaxial Layers --- p.85 / Chapter 5. --- CONCLUSIONS --- p.90 / REFERENCES --- p.93

No description available.

Este trabalho teve por objetivo o desenvolvimento de uma metodologia de análise estrutural de heteroestruturas, ou seja, estruturas formadas pela combinação de materiais diferentes depositados em camadas alternadas. O trabalho focalizou aspectos não apenas referentes às técnicas de difração de raios X, comumente utilizadas na caracterização estrutural destes novos materiais, mas também se concentrou no desenvolvimento de cálculos teóricos da intensidade difratada pelos raios X, os quais, comparados com os dados experimentais, dão informação precisa acerca do que poderíamos denominar qualidade estrutural. Uma comparação entre resultados obtidos com a teoria Cinemática Dinâmica foram também explorados e o alcance das duas teorias foi discutido. Este procedimento, embora tenha sido aplicado para a análise de heteroestruturas a base de semicondutores cristalinos, pode também ser aplicado, por exemplo, ao estudo de heteroestruturas magnéticas. É sempre fundamental no processo de desenvolvimento de novos materiais caracterizar as amostras após o crescimento, a fim de comparar os resultados experimentais com os valores nominais obtidos do procedimento de deposição. Em particular, neste trabalho, a caracterização estrutural de super-redes deformadas de Si 1-xGex/Ge e Si/Ge, crescidas sobre substratos de Ge e Si, respectivamente, realizou-se através do uso de técnicas não destrutivas de difração de raios X, envolvendo a medição dos parâmetros próprios das super-redes como: período, número de camadas atômicas, parâmetros de rede e deformação. / The aim of this work was the development of a methodology for the structural analysis of heterostructures, i. e., structures formed by the combination of different materials, deposited as alternate layers. The work focused on aspects not only related to x-ray diffraction techniques, usually utilized for the structural characterization of these new materials, but also it concentrated on the development of theorical calculations of the x-ray diffracted intensity, which were compared with experimental data in order to determine the so-called structural quality. The results obtained with the Kinematical and Dinamical X-ray Diffraction theories were explored and the scope of both theories was discussed. Even though this procedure was applied to the analysis of heterostrutures based on crystalline semiconductors, it also can be used, for example, to the study of magnetic multilayers. It is always fundamental in the development process of new materials to characterize the samples after growth, in order to compare the experimental results with the nominal values obtained by the deposition procedure. ln particular, in this work, the structural characterization of Si1-xGex /Ge and Si/Ge strained superlattices, deposited on Ge and Si substrate, respectively, was performed by means of non-destructive x-ray diffraction techniques, measuring superlattices parameters as: periodicity, number of atomic layers, lattice parameters and strain.

Neste trabalho são calculados os sub-níveis 1s, 2s, 2p±, 3s, 3p± e 3d±2 de elétrons ligados a impurezas doadoras em um poço quântico de GaAs/GaAlAs submetido a um campo magnético uniforme, via método variacional. São calculadas, então, as densidades de estados supondo-se uma distribuição uniforme de doadores, obtendo-se resultados que se assemelham aos do estado fundamental, com um pico principal e outro secundário. De posse do espectro desses sub-níveis rasos são calculados os coeficientes de absorção, na região do infra-vermelho distante, para as transições permitidas fazendo-se o uso da Regra de Ouro de Fermi. As densidades de doadores estão dentro dos limites do modelo de banda de impureza semi-clássica, portanto baixas densidades. Inicialmente é considerada uma compensação nula e uma distribuição uniforme de impurezas. Neste caso os cálculos são realizados analiticamente. Finalmente é considerada a compensação, sendo utilizada a simulação Monte Carlo. Neste segundo processo calcula-se o coeficiente de absorção, primeiramente considerando-se apenas o termo constante da expansão do potencial eletrostático das impurezas ionizadas. Em segunda etapa leva-se em conta os outros termos da expansão e faz-se um tratamento perturbativo. A forma da curva de absorção em infra-vermelho distante levando-se em conta este efeito da compensação é obtido pela primeira vez. São verificados alargamentos não homogêneos nas curvas de absorção e é estudado o efeito da variação da compensação e do campo magnético sobre o coeficiente de absorção. Este estudo constitui um elemento importante para o diagnóstico destas hetero-estruturas semicondutoras. / In this work we obtain the sub-levels 1s, 2s, 2p±, 3s, 3p±, and 3d±2 of donor bound electrons in a GaAs/GaAIAs quantum well by a variational calculation. The densities of states are calculated assuming an uniform distribution of donors, obtaining results similar to that of the ground state, with two peaks, a fundamental and a secundary. We calculate, then, the absorption coefficient, in the far infrared region, by means the Fermi\'s Golden Rule. The densities of donors are within the lirnits of the Semiclassical Impurity Band, i. e., low densities. The calculations are made analiticaly. Finally we consider a non-zero compensation and utilize the Monte Carlo simulation. In this second process the absorption coefficient is calculated firstly considering only the constant term of the expansion of the electroslatic potential due to ionized impurities. Then a perturbative treatement is made with the other terms in the expansion. The shape of the absorption coefficient in the far infrared, with the effect of compensation, was obtained by the first time. Inhomogeneous broadenings appear in the absorptions curves and the effect of variation of compensation and magnetic field is studied. This study is an important element for hetero-structures diagnosis.

>Magister Scientiae - MSc / This study is located within the Bredasdorp Basin which is on the southern continental margin, offshore South Africa. The basin is located between Infanta and Agulhas arches and is a rift basin that is southeastern trending. Sedimentology reports have shown that the basin is predominantly filled by Aptian to Maastrichtian deposits which overlays pre-existing late Jurassic to Early Cretaceous fluvial and shallow marine syn-rift deposits. Devonian Bokkeveld Group slates and or Ordovician-Silurian Table Mountain Group quartzites are shown to be the composition of basement rocks. The study area incorporates only three wells for this research; well F-AH1, F-AH2 and F-AR1. This paper was completed through analyzing and juxtaposing interpretations of results from gamma ray wireline log analysis with core analysis in which these correlations and figures were displayed using Petrel software and Coral Draw respectively. Core analysis resulted in the identification of, sixteen litho-facies for the entire study, which were recognized according to its grain size, texture, sedimentary structures, colour changes, base and top contacts, bioturbation, noticeable minerals, etc. Facies tend to alternate all the way through each well and between different wells with similar facies being present in different wells, but they are not evident in all the cores. Based on the classification of sand bodies, core analysis provides good indication that the general depositional environment of reservoirs within the studied wells are within a marginal marine depositional environment which are tidally influenced. Log signatures typical of sandstone reservoir bodies were discovered in the field where sand bodies are 20 m thick or less and were recognized in the study area. Depositional environments were characterized based on depositional environment similarities: a funnel-shaped facies representing a crevasse splay; a cylindrical-shaped facies representing slope channel-fills representing the transgressive-regressive shallow marine shelf.

<p>Denna rapport är en sammanställning av de 100 undersökta enskilda brunnarna i Landskrona kommun vid årsskiftet 05/06. Det utfördes analyser på mikrobiologisk-, nitrat-, nitrit- och även kemiska bekämpningsmedelspåverkan. Syftet med denna rapport är att bearbeta och presentera analysresultaten av de 100 enskilda brunnarna i Landskrona kommun och försöka dra slutsatser kring dessa. Alla analysresultaten sammanställdes i tabeller och så småningom kundes vissa slutsatser dras kring varför resultatet såg ut som det gjorde. Resultatet visade att endast åtta av de 100 brunnarna var otjänliga gällande mikrobiologisk påverkan. Denna parameter är väldigt varierande beroende mycket på yttre omständigheter men det kan ge en indikation på att brunnen inte är tillräckligt tät och därför kan ytvatten tränga in i brunnen. När det gäller nitritpåverkan blev bara en brunn otjänlig. Men när det gällde nitrat var det istället 17 % av brunnarna som visade sig vara otjänliga. Detta är ändå ett relativt bra resultat beroende på hur landskapet ser ut i Skåne med stor påverkan från enskilda avlopp, jordbruk och gödsling. Sist men inte minst analyserades kemiska bekämpningsmedel och gav ett oroande resultat. Hela 35 % av brunnarna var otjänliga pga. kemiska bekämpningsmedel. Detta resultat är inget ovanligt utan kan genom danska undersökningar bara bekräftas. Kemiska bekämpningsmedel kan sprida sig långa sträckor och inte bara vid den plats där ämnena använts eller spillts. De slutsatser som kan dras genom denna undersökning är att grävda brunnar i ytliga jordlager löper störst risk att i framtiden bli otjänliga då dessa utsetts för störst påverkan av föroreningar och ytvatten. Brunnar placerade på gårdsplan är speciellt utsatta och är starkt påverkade av både mikroorganismer och kemiska bekämpningsmedel. När det gäller kemiska bekämpningsmedel är resultaten från Landskrona liknande de från både Danmark och övriga Skåne.</p> / <p>The problem with bad drinking water in wells are a wide problem in an landscape such as Skåne. The purpose of this report is to work up all the data from the different analysis regarding drinking water quality from wells in Landskrona municipality. The parameters that were analysed were microorganisms, the content of nitrate and nitrite and also the concentration of pesticides. Many reports in the field of the subject were collected to get a good picture and a better knowledge of the different problems that lie ahead. This resulted in various conclusions but some of the conclusions was confirmed from other examinations. That wells in the ground are more exposed than wells in mountain. The concentration of pesticides were very high in many of the wells wich shows that this will be a great problem for us to deal with in the future. Examinations in both Denmark and remaining parts of Sweden also show high concentration of pesticides. This only confirm that the problem isn’t just a local here in the municipality.</p>

More efficient methods are needed for the in-situ evaluation of mass transfer parameters which describe the movement of solutes through aquifer material. The objective of this study was to develop a method for estimating diffusion rate and capacity coefficients using a single-well, "push-pull" tracer test. The method consists of the pulse-type injection of a test solution into the saturated zone of an aquifer through the screen of an existing monitoring well. This is followed by a resting (diffusion) period, after which the test solution is extracted from the same well. During the extraction phase a concentration breakthrough curve is obtained. The method uses numerical simulations of the extraction phase breakthrough curve to estimate mass transfer parameters. The methodology was evaluated using a series of laboratory-scale experiments which were performed in a Physical Aquifer Model (PAM). The sediment pack contained in the PAM was modified to create an immobile region governed by diffusive processes. Results from four laboratory-scale experiments are inconclusive in determining the ability of the method to determine mass transfer parameters. Experimental difficulties contributed a significant source of error during the method evaluation. The resting period between the injection and extraction phase was to allow diffusion into the initially solute-free immobile region. Evidence suggests solute was introduced into the immobile region by advective processes during the injection phase of the experiments. Additional experimental work is required to evaluate the methodology. This may include either laboratory or field-scale evaluation of the test method. / Graduation date: 1999

Responses of biological indicators of soil quality to winter cover cropping were measured on soil samples collected from 6 commercial growers' fields and two experiment research stations in the Willamette Valley of Oregon. The research stations were the North Willamette Research and Extension Center (Aurora, OR), and the Oregon State University Vegetable Farm (Corvallis, OR). The research stations and five on-farm sites compared winter cover crops or winter fallow in rotation with a summer vegetable crop. In one on-farm site, minimum tillage or conventional till following winter cover crops was compared. The objectives of this study were to: 1) monitor changes in soil biological properties under field managed with cover crops; 2) test potential of buried cotton strip as indicator of soil biological activity and as a soil quality index; and 3) assess the degree of correlation between tensile strength and cotton strip weight loss. The major findings were: 1) microbial biomass carbon and ��-glucosidase activity were the most sensitive to cover crop management; 2) cotton strip decomposition was correlated to soil biological properties but was not very sensitive to management changes; and 3) that measuring weight loss was nearly as effective as tensile strength in assessing cotton strip decomposition in soils. / Graduation date: 1999