Metal-insulator transition is one of the most important properties observed in certain materials which has been studied widely using a wide range of experimental techniques as well as theoretical models. This kind of a transition, observed in several systems, can take place by tuning several parameters such as pressure, temperature or the composition itself. In this thesis we study a few selected transition metal oxide bronzes exhibiting such phenomenon, each of which has a different cause for undergoing the transition. In Chapter 1, we discuss briefly several mechanisms and models that have been used to understand metal-insulator transitions. We also briefly discuss the role of disorder, electron-electron correlations or both to understand the different ways in which such transitions can occur. In Chapter 2, we describe the different experimental as well as theoretical techniques that have been used in this thesis. In Chapter 3, we study the fermi-edge of the NaxWO3 systems, as a function of x, to understand the origin of the metal-insulator transition occurring in this series of compounds. The system undergoes a metal-insulator transition at the critical composition xc=0.25, below which it is found to be insulating. At the lowest temperature, the very low x compounds behave as disordered and correlated materials. Above the transition composition, the compounds behave as disordered and correlated metals. In the insulating regime, close to the critical composition, we find that the system behaves in a way that cannot be described by any known theories for metals or insulators. We have also done a systematic analysis of the Fermi-edge data for the insulating samples as a function of temperature and we find that they cannot be described by any of the known theories for solid-state systems. Further development is necessary in the theoretical side to understand and interpret our data. In Chapter 4, we study the angle-resolved photoemission data for the highly metallic sodium tungsten bronze Na0.8WO3. We have synthesized the single-crystals by high-temperature electrochemical synthesis and we have performed angle-resolved photoemission experiments to understand the band structure of this system. The experimental results have been supported by theoretical calculations. We find that the rigid band model is valid in describing the electronic structure in these systems. We also find the existence of electron-like pockets along certain symmetry directions. Further, photon energy dependent studies on the x=0.8 sample suggest that there is a difference in the surface with the bulk of the sample. The bulk is perfectly periodic and ordered, whereas the surface shows a distortion due to the rotation or deformation of the WO6 octahedra. In Chapter 5, we have studied the electronic structure of the low dimensional molybdenum oxide La2Mo2O7, which is expected to have a charge density wave(CDW)driven metal-insulator transition around 125K. We indeed observed the presence of CDWs in this system, which was observed in the angle-resolved photoemission spectra as back-folding of bands below the transition temperature. We have also studied the temperature evolution of the bands close to the Fermi level and we see a gradually weakening and finally disappearance of the back-folded bands close to and above the transition temperature. We have studied the angle-integrated spectra of this system from which we conclude that La2Mo2O7 is a CDW non-Fermi liquid system. We have also evaluated the total and partial density of states in this system using Vienna ab-initio simulation package. We find the results consistent with our experimental findings. In Chapter 6, we study the metal-insulator transition in another low-dimensional molybdenum oxide KMo4O6, which is expected to show a metal-insulator transition around 120K due to the formation of spin-density waves. We observed back-folding of bands with lower intensities at low temperature, suggesting the formation of spin density waves in the system. The angle-integrated spectra suggested that the system is a non-CDW non-Fermi liquid system. We have also evaluated the density of states and the results are in agreement with our experimental findings. In conclusion we have investigated the electronic structure of different classes of systems and we have given clue to the origin of the metal-insulator transition in these systems.

Topological insulators and topological crystalline insulators are materials that have a bulk band structure that is gapped, but that also have toplogically protected non-gapped surface states. This implies that the bulk is insulating, but that the material can conduct electricity on some of its surfaces. The robustness of these surface states is a consequence of time-reversal symmetry, possibly in combination with invariance under other symmetries, like that of the crystal itself. In this thesis we review some of the basic theory for such materials. In particular we discuss how topological invariants can be derived for some specific systems. We then move on to do band structure calculations using the tight-binding method, with the aim to see the topologically protected surface states in a topological crystalline insulator. These calculations require the diagonalization of block tridiagonal matrices. We finish the thesis by studying the properties of such matrices in more detail and derive some results regarding the distribution and convergence of their eigenvalues.

Silicon-on-insulator (SOI) technology has become increasingly attractive because of the strong light confinement, which significantly reduces the footprint of the photonic components, and the possibility of monolithically integrating advanced photonic waveguide circuits with complex electronic circuits, which may reduce the cost of photonic integrated circuits by mass production. This thesis is dedicated to numerical simulation and experimental performance measurement of passive SOI waveguide devices. The thesis consists of two main parts. In the first part, SOI curved waveguide and corner turning mirror are studied. Propagation losses of the SOI waveguide devices are accurately measured using a Fabry-Perot interference method. Our measurements verify that the SOI corner turning mirror structures can not only significantly reduce the footprint size, but also reduce the access loss by replacing the curved sections in any SOI planar lightwave circuit systems. In the second part, an optical 90o hybrid based on 4 × 4 multimode interference (MMI) coupler is studied. Its quadrature phase behavior is verified by both numerical simulations and experimental measurements.

abstract: Combining the rapid development of semiconductor technologies, miniaturization of integrated circuits (ICs), and scaling down the device size is trending towards faster, cheaper, and more reliable components for low-power integrated circuits. Most research and development relate to efficiency, structure, materials, and performance. However, the thermal problem is also created and becomes more critical with shrinking device dimensions and increased integration densities, such that it affects the device performance and leads to degradation and damage. At the nanometer scale, the self-heating effect (SHE) is one of the main factors to degrade devices. Therefore, tracking and quantifying the SHE is important for reliability and efficiency issues. In this dissertation, engineers design two identical and closely spaced 40nm gate length silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor-field-effect transistors (NMOSFETs) that share a common source with the same active silicon region. One of the MOSFETs acts as a heater to heat-up the active region, while the other one is a thermometer to evaluate the SHE and local temperature changes. The thermometer provides a method to calibrate the numerical models of self-heating and track the heat flow. Moreover, it also involves a trap-rich SOI wafer technology, in which a trap-rich layer, with higher resistivity and lower thermal conductivity compared to conventional bulk silicon substrates. The trap-rich SOI substrates can reduce the cross-talk and minimize the power consumption to increase the system performance. In particular, it offers a solution to radio frequency integrated circuits (RFICs) which require fast switching and low leakage. In high power amplifier (PA) applications, Watt-level PAs operates at less than 50% efficiency because of temperature limitations. The author uses experimental measurements of the local temperature changes, combined with simulations to examine the heat flow and temperature distribution. The approach may be useful to build a self-test application, because it can quantify the temperature changes by putting one or multiple NMOSFET thermometers around a complementary metal-oxide-semiconductor (CMOS) power amplifier, while only adding minimum die area. It points to ways in which it can optimize the reliability of RFIC applications, which operate under high-temperature or high-power conditions to protect the device before it is overheated or damaged. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2020

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第22072号 / 工博第4653号 / 新制||工||1725(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 川上 養一, 准教授 杉山 和彦 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM

京都大学 / 新制・課程博士 / 博士(理学) / 甲第22986号 / 理博第4663号 / 新制||理||1669(附属図書館) / 京都大学大学院理学研究科物理学・宇宙物理学専攻 / (主査)教授 松田 祐司, 教授 石田 憲二, 准教授 笠原 裕一 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DFAM

L'étude de l'état isolant de Mott est un des domaines très actif de la recherche en matière condensée car les fortes corrélations qui en sont à l'origine donnent naissance à des états de la matière très variés et avec des applications potentielles. Sr₂IrO₄ est un isolant de Mott exotique car induit par un fort couplage spin-orbite. Il permet d'étudier l'impact des corrélations électroniques sur les propriétés de basses énergies sous un angle nouveau. L'objet de cette thèse est l'étude expérimentale des propriétés électroniques de ces composés iridates par des mesures d'ARPES permettant des observations directes de la structure électronique dans l'espace réciproque et de RMN et μSR, qui donnent une vision locale dans l'espace réel. Nous nous sommes en particulier intéressés à la transition isolant métal pouvant survenir en dopant ce composé. Une façon originale de doper Sr₂IrO₄ que nous avons étudiée en détails est de substituer l'iridium par du rhodium. Les deux sont isovalents, mais le rhodium capture un électron conduisant à un dopage effectif en trous. Grâce à l’ARPES, nous avons mis en évidence les différentes bandes de la structure électronique. Nous avons étudié attentivement le caractère orbital de ces bandes et mis en évidence des anisotropies résiduelles en certains points de l’espace réciproque, survivant malgré la présence du fort couplage spin-orbite. Ceci, ainsi que des effets de repliement de la structure électronique, donnent lieu à des variations brutales d'intensité, qui doivent être prises en compte pour analyser correctement les spectres. Lors du dopage avec le Rh, la phase métallique obtenue reste très incohérente, avec une absence de pic de quasiparticule et un pseudogap uniforme sur l'ensemble de la surface de Fermi. Le gap de Mott ne semble pas se fermer. Le pseudogap peut révéler une brisure de symétrie mais aussi l’effet du désordre introduit par le Rh et nous discuterons son origine, en lien avec la physique d’autres systèmes corrélés. Nous montrons que pour de faibles taux de substitution Ir/Rh, l’ajout de porteurs trous contrôle le comportement du système alors qu’à des taux de substitutions plus élevés, le nombre de porteurs est stable mais le désordre augmente et contrôle à son tour la physique. Nous nous sommes aussi intéressés aux propriétés électroniques et magnétiques sondées par la RMN de l'oxygène 17 sur poudre et poudre orientée et par μSR. La RMN permet de différencier les deux sites d'oxygène de Sr₂IrO₄ nous permettant de déterminer certains paramètres nucléaires préalables à l'étude fine des propriétés électroniques. Dans le composé pur, nous avons étudié la transition magnétique et observé ce qui semble être le développement d'un moment sur l'oxygène apical. Dans les composés dopés, nous ne voyons pas de désordre structural important malgré des taux de dopage allant jusqu'à 15% de rhodium. Les propriétés magnétiques présentent néanmoins des signes d’inhomogénéité, plus marqués dans le cas du dopage lanthane. Les fluctuations dans le composé métallique montrant une prédominance des corrélations antiferromagnétiques. De son côté, la μSR a permis de construire le diagramme de phases de la transition antiferromagnétique et de mettre en évidence l'inhomogénéité de la transition magnétique dans les échantillons faiblement dopés. À basse température, nous confirmons que la phase magnétique évolue, peut-être avec l’apparition d’un moment sur l’oxygène, et cet effet est même renforcé dans les composés faiblement dopés. Au-dessus de la température de transition antiferromagnétique, nous n'avons pas trouvé de signature d'une transition vers une phase de boucles de courant observée par d'autres techniques. Cette étude permet d’attribuer à Sr₂IrO₄ dopé rhodium le caractère assez rare de matériau 2D fortement corrélé à désordre contrôlé. De manière plus générale, cet exemple devrait permettre de mieux comprendre les effets éventuels de désordre associés à d’autre façons de doper les iridates. / The study of the insulating Mott state is a very active field of research in condensed matter because of the strong correlations usually at play which can lead to a large variety of states of matter, with potential applications. Sr₂IrO₄ is an exotic Mott insulator because it is induced by a strong spin-orbit coupling. It allows studying the impact of electronic correlations on the low energy properties from a new viewpoint. The subject of this thesis is the experimental study of the electronic properties of these iridate compounds by ARPES measurements allowing direct observations of the electronic structure in reciprocal space and NMR and μSR, which give a local view in real space. We have in particular studied the metal to insulator transition which can occur in this compound upon doping. An original way to dope Sr₂IrO₄ that we have investigated in details is to substitute iridium by rhodium. Both are isovalent but the rhodium captures an electron leading to an effective hole doping. Thanks to ARPES we have identified the different bands in the electronic structure. We have studied in details the orbital character of these bands and pointed out residual anisotropies at some points in the reciprocal space, which survive despite the strong spin-orbit coupling. This, as well as the folding effects of the electronic structure, give rise to sudden variations in intensity, which must be taken into account in order to correctly analyze the spectra. Upon doping with Rh, the obtained metallic phase remains very incoherent, with no quasiparticle peak and a uniform pseudogap over the full Fermi surface. The Mott gap does not seem to be closing. The pseudogap can reveal symmetry breaking but also the effect of the disorder introduced by the Rh and we will discuss its origin, in relation to the physics of other correlated systems. We show that for low Ir/Rh substitution rates, the addition of hole carriers controls the behavior of the system while at higher substitution rates, the number of carriers is stable but the disorder increases and in turn controls physics.We were also interested in the electronic and magnetic properties probed by 17 oxygen NMR on powder and oriented powder samples and by μSR. NMR makes it possible to differentiate the two oxygen sites in Sr₂IrO₄ allowing determining some nuclear parameters necessary to the fine study of the electronic properties. In the pure compound, we have studied the magnetic transition and observed what appears to be the development of a moment on the apical oxygen. In the doped compounds, we do not see any significant structural disorder despite doping levels up to 15% rhodium. However, the magnetic properties nevertheless show signs of inhomogeneity, which are more pronounced in the case of lanthanum doping. The fluctuations in the correlated metal compound show a predominance of antiferromagnetic correlations. From our μSR investigation, we could construct the magnetic phase diagram which highlights the inhomogeneity of the magnetic transition in the low-doped samples. At low temperature, we confirm that the magnetic phase evolves, perhaps with the appearance of a moment on the oxygen, and this effect is even enhanced in the lightly doped compounds. Above the antiferromagnetic transition temperature, we did not find signatures of the current loop phase observed by other techniques. This study makes it possible to attribute to Sr₂IrO₄ doped with rhodium the rather rare character of strongly correlated 2D material with controlled disorder. More generally, this example should provide a better understanding of the potential effects of disorder associated with other ways to dope iridates.

Die drei-dimensionalen Topologische Isolatoren Bi2Se3 and Bi2Te3 sind Modell-Systeme einer neuen Klasse von Isolatoren mit metallischen Oberflächenzuständen. Ihre kleinen Bandlücken und die schweren Elemente sind essentiell für die topologisch nicht-triviale Bandstruktur, sind aber ebenso verantwortlich für andere bemerkenswerte Eigenschaften, wie etwa für ihre Leistungsfähigkeit als Thermoelektrika. Diese Arbeit untersucht die elektronischen Eigenschaften der Topologischen Isolatoren Bi2Se3 und Bi2Te3 mittels zahlreicher experimenteller Methoden. Es wird gezeigt, dass Ferromagnetismus in Mn gedoptem Bi2Te3 durch sintern unterdrückt werden kann. Zudem werden ein überraschend großer Magnetoresistiver Effekt und ein ladungsträgerunabhängiger Vorzeichenwechsel des Seebeck-Koeffizienten mit zunehmenden Mn Gehalt diskutiert. Kernmagnetische Resonanz (NMR) von 125Te Kernen in Bi2Te3 Einkristallen lässt auf eine ungewöhnliche elektronische SpinSuszeptibilität and komplexe NMR Verschiebungen schließen. Es wird gezeigt dass die Quadrupolwechselwirkung von 209Bi Kernen in Bi2Se3 Einkristallen eine Signatur der Bandinversion ist, in quantitativer Ubereinstimmung mit DFT Rechnungen. Weiterhin wird argumentiert dass die starke Spin-Bahn Kopplung der Leitungselektronen zu einer nicht-trivialen Orientierungsabh¨angigkeit der 209Bi Quadrupolaufspaltung führt.:Contents List of Figures List of Tables List of abbreviations Introduction 1 Topological insulators in three dimensions 2 Theoretical background 3 Methods I: structural, electronic and magnetic properties 4 Methods II: nuclear magnetic resonance 5 Sample preparation and basic characterisation6 Magnetic and electronic properties of Mn doped Bi2Te3 7 NMR of spin 1/2 nuclei: 125Te in Bi2Te3 8 NMR of quadrupole nuclei: 209Bi in Bi2Se3 Conclusions and outlook Appendix Bibliography / The three-dimensional topological insulators Bi2Se3 and Bi2Te3 are model systems of a new class of materials with an insulating bulk and gapless surface states. Their small band gaps and the heavy elements are essential for the topologically non-trivial band structure, but these features are similarly responsible for other remarkable properties, such as their high thermoelectric performance. This thesis investigates the electronic properties of the topological insulators Bi2Se3 and Bi2Te3 with a broad range of experimental methods. Ferromagnetism in Mn doped Bi2Te3 is shown to disappear under sample sintering. A surprisingly large magnetoresistance and a charge carrier independent change in the sign of the thermopower with increasing Mn content are discussed.125Te nuclear magnetic resonance (NMR) of Bi2Te3 single crystals suggest an unusual electronic spin susceptibility and complex NMR shifts. The quadrupole interaction of 209Bi nuclei in Bi2Se3 single crystals is shown to be a signature of the band inversion in quantitative agreement with first-principle calculations. Furthermore, it is proposed that the strong spin-orbit coupling of conduction electrons causes a non-trivial orientation dependent quadrupole splitting of the 209Bi resonance.:Contents List of Figures List of Tables List of abbreviations Introduction 1 Topological insulators in three dimensions 2 Theoretical background 3 Methods I: structural, electronic and magnetic properties 4 Methods II: nuclear magnetic resonance 5 Sample preparation and basic characterisation6 Magnetic and electronic properties of Mn doped Bi2Te3 7 NMR of spin 1/2 nuclei: 125Te in Bi2Te3 8 NMR of quadrupole nuclei: 209Bi in Bi2Se3 Conclusions and outlook Appendix Bibliography

In this work, optical pump – near-infrared probe and near-infrared pump – mid-infrared probe spectroscopy are used for the investigation of pressure-induced insulator-to-metal transitions in transition metal oxide compounds. The materials under study are α-Fe₂O₃, also known as hematite, and VO₂. Both materials undergo pressure-induced metallization. However, the physical mechanisms of this phase transition are very different for these systems and have not been fully understood up to now. Using ultrafast pump-probe spectroscopy we obtain an insight into the evolution of the band structure and electron dynamics across the insulator-to-metal transition. In the case of VO₂, our near-infrared pump – mid-infrared probe experiments reveal a non-vanishing pumping threshold for photo-induced metallization even at our highest pressures around 20 GPa. This demonstrates the existence of localized charge carriers and the corresponding persistence of a band gap. Besides the threshold behaviour for photo-induced metallization, the carrier relaxation time scale, and the linear reflectivity and transmissivity have been studied under pressure increase. An anomaly in the threshold behaviour as well as the linear reflectivity and transmissivity at a critical pressure around 7 GPa indicates band gap filling under pressure. This is further supported by results obtained under decompression, where the changes of the linear reflectivity turned out to be almost fully reversible. The observations on VO₂ are highly reproducible and can be explained in terms of a pressure-induced bandwidth-driven insulator-to-metal transition. Fe₂O₃ has been studied via optical pump – near-infrared probe spectroscopy up to pressures of 60 GPa. In the pressure range up to 40 GPa, the changes of the response can be explained by photo-induced absorption and bleaching. The pressure dependent study of the relaxation dynamics allows to identify cooling of the electron system as origin of the picosecond relaxation process. A sharp anomaly found in the response of Fe₂O₃ at 40 GPa indicates a strong rearrangement of the electronic band structure which could be explained by an insulator-to-metal phase transition induced by pumping. The successful demonstration of pump-probe experiments in diamond anvil cells using pulses from optical to mid-infrared wavelengths and reaching pressures of several tens of GPa is a good basis for further experimental high-pressure studies. Our results obtained on VO₂ and Fe₂O₃ can serve as a benchmark for the development of advanced material models. / In der vorliegenden Arbeit wird der druckinduzierte Isolator–Metall-Phasenübergang in den Übergangsmetalloxiden α-Fe₂O₃ (Hämatit) und VO₂ mittels ultraschneller Anrege-Abfrage-Spektroskopie (engl. pump-probe spectroscopy) untersucht. Hämatit wird dazu im sichtbaren Spektralbereich angeregt und im nahen Infrarot (NIR) abgefragt, bei VO₂ wurde zur Anregung NIR und zur Abfrage mittleres Infrarot (MIR) verwendet. Beide Materialien werden bei hinreichend hohem Druck metallisch, wobei die jeweils dem Isolator–Metall-Phasenübergang zugrundeliegenden Mechanismen verschieden und noch nicht vollständig verstanden sind. Dies motiviert den Einsatz von ultraschneller Anrege-Abfrage-Spektroskopie, die einen Einblick in die Änderung der Bandstruktur und der Ladungsträgerdynamik während des Isolator–Metall-Übergangs gewährt. Beim Überschreiten eines Schwellenwertes der Anregung wird VO₂ photoinduziert metallisch. In unseren NIR-MIR Anrege-Abfrage-Experimenten zeigt sich, dass der Schwellenwert auch bei den höchsten Drücken dieser Messreihe (ca. 20 GPa) nicht verschwindet. Dies weist auf die Existenz lokalisierter Ladungsträger hin und damit verbunden auf das Fortbestehen der Bandlücke. Neben dem Schwellenwert für photoinduzierte Metallisierung wurden auch die Druckabhängigkeiten der Relaxationsdynamik der Ladungsträger sowie des linearen Reflexions- und Transmissionsvermögens untersucht. Eine Anomalie im druckabhängigen Verlauf des Anrege Schwellenwertes sowie des linearen Reflexions- und Transmissionsvermögens bei einem kritischen Druck von ca. 7 GPa deutet darauf hin, dass durch das Anlegen von Druck Zustände innerhalb der Bandlücke induziert werden. Diese Interpretation wird auch durch während der Dekompression gewonnene Messdaten unterstützt. Die druckinduzierte Änderung des linearen Reflexionsvermögens erwies sich als nahezu vollständig reversibel. Unsere Beobachtungen an VO₂ sind reproduzierbar und lassen sich als druckinduzierter, Bandbreiten-getriebener Isolator–Metall-Übergang nachvollziehen. Fe₂O₃ wurde mittels Anrege-Abfrage-Spektroskopie bei Drücken bis zu 60 GPa untersucht. Änderungen im Druckbereich bis 40 GPa können als Wechselspiel eines photo-induzierten Absorptionsbandes und der photoinduzierten Unterdrückung eines anderen Absorptionskanals erklärt werden. Die druckabhängige Untersuchung der Relaxationsdynamik ermöglicht es, der Relaxation auf der Zeitskala weniger Pikosekunden Kühlungsdynamik als Ursache zuzuordnen. Eine scharfe Anomalie im qualitativen Verlauf des Anrege-Abfrage-Signals von Fe₂O₃ bei einem Druck von 40 GPa weist auf deutliche Änderungen in der elektronischen Bandstruktur hin, welche als Signatur eines photoinduzierten Isolator–Metall Phasenübergangs interpretiert werden können. Die erfolgreiche Demonstration von Anrege-Abfrage-Experimenten in Diamantstempeldruckzellen mit Laserimpulsen vom sichtbaren Spektralbereich bis hin zum mittleren Infrarot und bei Drücken von 20 GPa bis zu 60 GPa liefert die solide Basis für weitergehende Hochdruck-Experimente. Die an VO₂ und Fe₂O₃ erzielten Ergebnisse sind eine gute Grundlage für die Weiterentwicklung der theoretischen Beschreibung solcher Materialsysteme.

In dieser Arbeit wird die Erzeugung permanenter Nanostrukturen durch den Beschuss mit langsamen (v < 5x105m/s) hochgeladenen (q < 40) Ionen auf den Oberflächen der Ionenkristalle CaF2 sowie KBr untersucht. Die systematische Analyse der Probenoberfläche mittels Raster-Kraft-Mikroskopie liefert detaillierte Informationen über den Einfluss von potentieller und kinetischer Projektilenergie auf den Prozess der Strukturerzeugung. Der individuelle Einfall hochgeladener Ionen auf der KBr(001)-Oberfläche kann die Erzeugung monoatomar tiefer, lochartiger Strukturen -Nanopits- mit einer lateralen Ausdehnung von wenigen 10nm initiieren. Das Volumen dieser Löcher und damit die Anzahl gesputterter Sekundärteilchen zeigt eine lineare Abhängigkeit von der potentiellen Energie der Projektile. Für das Einsetzen der Locherzeugung konnte ein von der Projektilgeschwindigkeit abhängiger Grenzwert der potentiellen Energie E_grenz^pot (Ekin) gefunden werden. Auf der Basis der defekt-induzierten Desorption durch Elektronen wurde unter Einbeziehung von Effekten der Defektagglomeration ein konsistentes mikroskopisches Modell für den Prozess der Locherzeugung konzipiert. Für die CaF2(111)-Oberfläche kann die aus jüngsten Studien bekannte, individuelle Erzeugung hügelartiger Nanostrukturen -Nanohillocks- durch hochgeladene Ionen in dieser Arbeit auch für kleinste kinetische Energien (E_kin < 150eVxq) verifiziert werden. Die potentielle Energie der einfallenden Ionen wird damit erstmalig zweifelsfrei als alleinige Ursache der Nanostrukturerzeugung identifiziert. Zudem zeigt sich bei geringer Projektilgeschwindigkeit eine Verschiebung der potentiellen Grenzenergie zur Hillock-Erzeugung. Im Rahmen einer Kooperation an der Technischen Universität Wien durchgeführte Simulationsrechnungen auf der Grundlage des inelastischen thermal spike-Modells zeigen, dass die individuelle Hillock-Erzeugung durch hochgeladene Ionen mit einer lokalen Schmelze des Ionenkristalls verknüpft werden kann. Dem essentiellen Einfluss der Elektronenemission während der Wechselwirkung des hochgeladenen Ions mit der Oberfläche auf den Prozess der Nanostrukturerzeugung wird in komplementären Untersuchungen zur Sekundärelektronenstatistik Rechnung getragen. Erstmalig werden dabei Gesamtelektronenausbeuten für Isolatoroberflächen bei kleinsten Projektilgeschwindigkeiten (v < 1x10^5 m/s) bestimmt. Für Geschwindigkeiten v < 5x10^4 m/s findet sich für die Isolatoroberfläche in starkem Kontrast zu Metallen ein signifikanter Abfall der Elektronenausbeute mit sinkender kinetischer Energie. Mögliche Ursachen dieses Effektes werden auf der Grundlage unterschiedlicher Modelle diskutiert.