We attempted to fabricate the CuInSe2:Sb thin-film solar cells with a Al/ZnO:Al(AZO)/ ZnSe /CuInSe2:Sb /Mo/soda-lime glass(SLG) structure. The growth of CuInSe2 film in the presence of Sb can effectively improve the surface morphology and benefit the growth of the device. A ZnSe buffer layer has been applied as an attractive alternative to a CdS buffer layer, thus eliminating environment from pollution. By varying the Ar pressure during the deposition, the Mo bilayer has been fabricated with both low resistivity and good adhesion. Currently the tensile stress was maintained below 100MPa, and the lowest sheet resistance achieved 0.205(£[/¡¼). The fabrication condition with a 5-cm sputtering distance could provide the lowest resistivity of 1.73¡Ñ10-3 (£[-cm) in the AZO thin-film that shows a transmittance of above 80¢Min the visible range. Applying the technology of optical lithography to deposit the Al metal front grid, the Al/ AZO ohmic contact resistance was improved. The energy conversion efficiency of the CIS thin-film solar cell (Al/ AZO/ ZnSe /CuInSe2 /Mo/ SLG) was 4.4¢M(Voc =0.41 V¡AI sc = 3.9 mA ¡AFF = 69 ¢M) by applying the irradiation with a solar simulator under one-sun (AM1.5, 100mW/cm2) conditions. However, the efficiency of CIS:Sb solar cell (Al/ AZO/ ZnSe /CuInSe2 :Sb /Mo/ SLG) was improved to to 6.0¢M(Voc =0.43 V¡AI sc = 5.15 mA ¡AFF = 68 ¢M). This result indicates that the CIS film growth with Sb can increase the short-circuit current.

Silicon heterojunction solar cells, a-Si:H/c-Si, are promising technology for future photovoltaic systems. An a-Si:H/c-Si heterojunction solar cell combines the advantages of single crystalline silicon photovoltaic with thin-film technologies. This thesis reports a detailed survey of heterojunction silicon solar cells with p-type wafer fabricated by magnetron sputtering and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques at low processing temperature. In the first part of this study, magnetron sputtering method was employed to fabricate a-Si:H thin films and then a-Si:H/c-Si solar cells. Amorphous silicon (a-Si:H) films were grown on glass in order to perform electrical and optical characterizations. The J-V characteristics of the silicon heterojunction solar cells were analyzed as a function of a-Si:H properties. It was shown that a-Si thin films with well-behaved chemical and electronic properties could be fabricated by the magnetron sputtering. Hydrogenation of the grown film could be achieved by H2 introduction into the chamber during the sputtering. In spite of the good film properties, fabricated solar cells had poor photovoltaic parameters with a low rectification characteristic. This low device performance was caused by high resistivity and low doping concentration in the sputtered film. The second part of the thesis is dedicated to heterojunction solar cells fabricated by PECVD. In this part a systematic study of various PECVD processing parameters were carried out to optimize the a-Si:H(n) emitter properties for the a-Si:H(n)/c-Si(p) solar cell applications. In the next stage, a thin optimized a-Si:H(i) buffer layer was included on the emitter side and on the rear side of the c-Si(p) to improve the surface passivation. Insertion of an a-Si:H(i) buffer layer yielded higher high open circuit voltage (Voc) with lower fill factor. It was shown that high Voc is due to the efficient surface passivation by the front/rear intrinsic layer which was also confirmed by the measurement of high effective lifetime for photo-generated carriers. Low fill factor on the other hand is caused by increasing resistivity of the solar cells by inserting low conductivity a-Si:H(i) layers.

Polymers are with low carrier mobility. If polymer solar cells are to exhibit high power conversion efficiencies, their carrier mobilities must be improved. Metallic NPs are promising materials for use in polymer solar cells because of their high conductivities. In this work, we studied the carrier transport characteristic of metallic nanoparticle blending into polymers. We blended Pt nanoparticles (Pt NPs) and Pd nanoparticles (Pd NPs) into polymers to improve carrier mobility, and enhance the power conversion efficiency of the polymer solar cell. P3HT was used as a donor material because of its high stability and with high absorption in visible light. PCBM was used as a acceptor material because of its high stability and with high electron transportation. We blended modified Pt NPs and Pd NPs into the P3HT:PCBM active layer, with the device configurations of ITO/PEDOT:PSS/P3HT:PCBM: Pt NPs/Al and ITO/PEDOT:PSS/P3HT:PCBM:Pd NPs/Al, respectively polymer solar cells measured was under AM 1.5G 100mW/cm2 illumination. When we blended Pt NPs into the active layer, the open-circuit remained 0.64V, the short-circuit current increased from 6.67mA/cm2 to 9mA/cm2, the power conversion efficiency increased from 1.96% to 3.08%. When we blended Pd NPs into the active layer, the open-circuit remained 0.62V, the short-circuit current increased from 6.33mA/cm2 to 7.33mA/cm2, the power conversion efficiency increased from 1.7% to 2.48%. The enhanced efficiency originated from the increased carrier mobility of the active layer when the Pt NPs or Pd NPs were present.

In this study, we deposit titanium dioxide (TiO2) on the indium tin oxide (ITO/glass) substrate by a liquid phase deposition (LPD) method as a buffer layer and coat TiO¬2 particles on LPD-TiO2 films by spin-coating method as anode of dye-sensitize solar cell (DSSC). In order to adjust the optical absorption edge of titanium dioxide to the visible light, we co-dope fluorine and nitrogen into TiO2 by LPD method and Ammonium Fluoride (NH4F). In our experiment, the morphology and thickness was characterized by scanning electron microscopy (SEM), structure was characterized by X-ray diffraction (XRD), chemical properties was characterized by electron spectroscope chemical analysis (ESCA), structural and spectral properties were characterized by ultraviolet-visible spectroscopy (UV-Vis) spectroscopy and current-voltage (I-V) characterization of solar cells was measured by B1500A. In our results, we enhance the performance of TiO2 as a DSSC`s anode, the open circuit voltage can reach to 0.71 V, the short circuit current can reach to 5.14 mA, the conversion efficiency can reach to 1.91 % and the fill factor can reach to 52.5 %.

Photovoltaic (PV) conversion of solar energy appears to be one of the most promising ways of meeting the increasing energy demand. In space, photovoltaic power source is the only safe alternative. Conventional silicon solar cell technologies have seen several improvements and off late GaAs/Ge and multijunction solar cells are developed to improve conversion efficiency. Demand for higher power, smaller size, lesser weight and higher efficiency has necessitated the use of high frequency switching power conditioners, which requires a better understanding of the AC characteristics of the solar cell, especially its capacitance. Solar cell is large p-n junction diode, whose AC parameters (capacitance and resistance) varies nonlinearly with its operating voltage, temperature and depend on the method (frequency or time domain) of measurement.Hence, studies on AC parameters of solar cells is taken up involving development of instrumentation, measurements on various types of solar cells and applications of AC parameters on switching shunt regulators. In the present research work a measurement set-up to measure the solar cell AC parameters using impedance spectroscopy technique is established first with the commercial instruments. Here a small AC voltage (<VT) is applied about the operating voltage (DC bias) and its complex impedance is measured from the resultant current over a wide range of frequencies. Cell capacitance, parallel resistance, series resistance and inductance are estimated from the impedance spectrum, which is plot of the cell impedance in a complex plane. The principle of measurement, details of measurement set-up with calibration, testing and limitations observed when applied to solar cells, are presented. To over come the limitations in the measurement set-up, a dedicated userfriendly instrument called Solar Cell Impedance Analyser is developed to measure solar cell AC parameters. It is a personal computer based virtual instrument, which has a power amplifier, a high-speed data acquisition card and an arbitrary function generator card with a custom built micro controller based hardware with an application specific software developed using graphical programming language. A novel concept of software range extender is introduced, which virtually increases the dynamic range of the power amplifier.

Photovoltaic (PV) conversion of solar energy appears to be one of the most promising ways of meeting the increasing future energy demand. In space, photovoltaic power source is the only alternative. The demand for higher power has necessitated the use of high speed switching charge controller and power conditioner. To design an efficient and reliable switching charge controller, the static (I-V) and dynamic (AC) characteristics of a solar cell need to be understood. The AC parameters of a solar cell can be measured either by Frequency Domain technique or by Time Domain technique. In frequency domain technique, a small signal is applied about the operating point and the AC parameters are measured. Hence, in the frequency domain technique the steady state values of AC parameters at a particular operating condition are measured. In time domain technique, a transient measurement is made where the cell voltage varies from short-circuit to open circuit or vice versa. Hence, this technique gives only the time constant of a solar cell. The impedance spectroscopy is a frequency domain technique widely used in electro chemistry to study battery characteristics. In the present investigation, the impedance spectroscopy is proposed for measuring the AC parameters of solar cells. An experimental set-up has been developed to measure the solar cell AC parameters. The AC parameters of Silicon (BSR and BSFR) solar cells and GaAs/Ge solar cells are measured using impedance spectroscopy (IS). The cell capacitance, the parallel resistance and the series resistance are measured and compared. GaAs/Ge solar cell has shown only transition Capacitance throughout its operating range while silicon (BSR and BSFR) solar cells exhibited both transition and diffusion capacitances. Theoretical and experimental values of the cell parallel resistance are compared and are in good agreement. While the diode factor in silicon solar cell varies from 2 to 1, where as in GaAs/Ge solar cell it varies from 4 to 2 to 1. Measurements conducted using open circuit voltage buildup (time domain technique) on silicon BSR solar cell shows that the collected data can be used for the restricted purpose of measuring cell transient response. The dime domain technique could not estimate the solar cell. It may be noted that the impedance spectroscopy assumes piece-wise linearity of the solar cell characteristics, lending itself for easy measurement and modeling. This assumption is valid as the signal amplitude is less than thermal voltage (VT). Since, the parameters are measured under steady state, the values are more stable and accurate. An attempt has also been made to correlate the measured AC parameters with the requirements of switching charge controllers. These correlations can be used to design the switching controllers for device rating, circuit stability and other aspects.

Transferring organic photovoltaics (OPV) from the laboratory into economically feasible products, requires the fabrication of modules, a series of connected single cells. During this transition, there is typically a drastic decrease in power conversion efficiency (PCE). This thesis reports on the design, fabrication, and characterization of state-of-the-art, high-performance organic photovoltaic modules with a novel geometry that composed of unit cells with alternating electrical polarities. Such configuration is realized by exclusive patterning of the interlayers and electrodes and avoids patterning of the photoactive layer. With this novel architecture, area losses of photovoltaic module can be significantly reduced compared with the conventional configurations. The processing of this new solar cell module is also compatible with large area processing techniques such as slot-die coating. This thesis reports on 4-cell and 8-cell modules, wherein the measured fill-factors (FF) and PCE of the constituent sub-cells and of the modules are almost identical. The 4-cell module, with a total area of 0.8 cm2, exhibits an open-circuit voltage (VOC) of 3.15 V, a short circuit-current density (JSC) of 2.3 mA/cm2 and a FF of 0.69, yielding a PCE of 5.01%. The 8-cell module, with a total area of 1.6 cm2, exhibits a VOC of 6.39 V, a JSC of 1.2 mA/cm2 and a FF of 0.63, yielding a PCE of 5.06%. Similar PCE values between 4-cell and 8-cell module is a demonstration of scalability of this novel geometry without compromising the efficiency.

In this thesis CIGS absorber layers have been deposited by gas flow sputtering with an extra supply of selenium, a method that displays promise for large scale production because of its one-step sputtering route which deposits low energy particles in a high deposition rate. In this thesis a method was developed where selenium was added to the sputtering process inside the sputter chamber in a controllable manner and in larger amount than done in previous projects. A total of five samples were manufactured with altered evaporation temperatures and an extra supply of selenium which then were finalized to solar cells using the standard baseline process of the Ångström solar center. The characteristics of the CIGS layer and solar cells were analyzed by XRF, IV- and QE measurements. A cell with a conversion efficiency of 11.6 %, Jsc of 27.9 mA/cm2, Voc of 0.63 V and fill factor of 66.2 % was obtained on a 0.5 cm2 cell area without an antireflective coating. All samples contained cells with obtained efficiencies above 10 %, but over the whole samples the efficiencies varied considerably. The samples that were deposited with moderately large selenium evaporation provided the highest efficiencies with a relatively good homogeneity over the substrate. Results show a deficiency of copper in the CIGS films compared to the target composition. The copper content was lower than 70 % expressed in Cu/(Ga+In), which probably resulted in a low diffusion length for electrons, leading to limited cell efficiencies.  Through the duration of the thesis issues that concerned the power supply- and the controls to the substrate heaters as well as the control of the evaporation temperature during the depositions arose that required problem solving and needs to be resolved for the future progression of this work. The conclusions drawn from this thesis are that it is possible to vary the temperature of the selenium source and thereby control the amount of selenium that evaporates during the deposition process even though there is a lot of additional heating in the sputter chamber from both the substrate heaters and the sputter source which could affect the ability to control the amount of selenium being evaporated. That the most likely reason for the limited efficiencies is due to the low copper content in the CIGS films and that a larger amount of evaporated selenium compared to previous work did not result in higher obtained efficiencies.

This dissertation presents novel applications of ligand-capped II-VI semiconductor nanocrystals (i.e. CdSe and CdTe).Hybrid polymer-nanocrystal thin films were prepared using a bottom-up electrochemical crosslinking method, where thiophene-functionalized CdSe NCs were wired to electron-rich 3,4-dioxy-substituded thiophene polymers. Both nanocomposite and effective monolayer (EML) films were achieved by controlling monomer feed ratios during the crosslinking steps. These hybrid thin films showed enhanced photoelectrochemical current efficiencies with a variety of solution acceptor molecules compared to polymer control films, which was due to sensitization by the CdSe NCs. The electronic structure of the polymer played a critical role in the potential (doping) dependent hole capture efficiency from photoexcited CdSe NCs. Furthermore, photocurrent efficiencies were correlated with nanocrystal size, which was a direct product of frontier orbital energy shifting due to quantum confinement effects.All-inorganic CdTe-CdSe nanocrystal solar cells were fabricated by a facile layer-by-layer procedure. A low-temperature sintering strategy was utilized to electronically couple the nanocrystal thin films, which maintained the individual electronic properties of the nanocrystals. The electrical characteristics of these solar cells displayed predictable trends in open circuit voltage with varying CdSe NC diameter.Novel CdSe NC diffraction gratings were prepared by a facile microcontact molding procedure. These transmission gratings showed exceptionally high diffraction efficiencies that were dependent on optimum grating morphologies and the refractive index contrast provided by the nanocrystals, which was size-dependent. These films also showed promise as coupling gratings for internal reflection elements.

Solution processed solar cells offer the promise of a low cost solution to global energy concerns. Colloidal quantum dots are one material that can be easily synthesized in and deposited from solution. These nanoparticles also offer the unique ability to select the desired optical and electrical characteristics, all within the same materials system, through small variations in their physical dimensions. These materials, unfortunately, are not without their limitations. To date, films made from colloidal quantum dots exhibit limited mobilities and short minority diffusion lengths. These limitations imply that simple device structures may not be sufficient to make an efficient solar cell. Here we show that through clever manipulation of the geometric and energetic structures, we can utilize the size-tunability of CQDs while masking their poor electrical characteristics. We further outline the physical mechanisms present within these architectures, namely the utilization of a distributed built-in electric field to extract current through drift rather than diffusion. These architectures have consequently exceeded the performance of legacy architectures such as the Schottky cell. Finally, we discuss some of the limiting modes within these architectures and within CQD films in general including the impact of surface traps and polydispersity in CQD populations. Through the development of these novel architectures, the power conversion efficiency of CQD solar cells has increased from ~3.5% to 7.4%; the highest efficiencies yet reported for colloidal quantum dot solar cells.