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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
51

Optimalizace digitálního záznamu obrazu u nízkonapěťového elektronového mikroskopu LV EM5 / Low voltage electron microscope LV EM5 - digital imaging optimalization

LANGHANS, Jan January 2009 (has links)
This master thesis is focused on the optimization of low voltage electron microscope LVTEM, the description of construction and the comparison of LVTEM and conventional electron microscope, with concentration on the image acquiring and adjusting.
52

TEM Characterization of Electrically Stressed High Electron Mobility Transistors

January 2012 (has links)
abstract: High electron mobility transistors (HEMTs) based on Group III-nitride heterostructures have been characterized by advanced electron microscopy methods including off-axis electron holography, nanoscale chemical analysis, and electrical measurements, as well as other techniques. The dissertation was organized primarily into three topical areas: (1) characterization of near-gate defects in electrically stressed AlGaN/GaN HEMTs, (2) microstructural and chemical analysis of the gate/buffer interface of AlN/GaN HEMTs, and (3) studies of the impact of laser-liftoff processing on AlGaN/GaN HEMTs. The electrical performance of stressed AlGaN/GaN HEMTs was measured and the devices binned accordingly. Source- and drain-side degraded, undegraded, and unstressed devices were then prepared via focused-ion-beam milling for examination. Defects in the near-gate region were identified and their correlation to electrical measurements analyzed. Increased gate leakage after electrical stressing is typically attributed to "V"-shaped defects at the gate edge. However, strong evidence was found for gate metal diffusion into the barrier layer as another contributing factor. AlN/GaN HEMTs grown on sapphire substrates were found to have high electrical performance which is attributed to the AlN barrier layer, and robust ohmic and gate contact processes. TEM analysis identified oxidation at the gate metal/AlN buffer layer interface. This thin a-oxide gate insulator was further characterized by energy-dispersive x-ray spectroscopy and energy-filtered TEM. Attributed to this previously unidentified layer, high reverse gate bias up to −30 V was demonstrated and drain-induced gate leakage was suppressed to values of less than 10−6 A/mm. In addition, extrinsic gm and ft * LG were improved to the highest reported values for AlN/GaN HEMTs fabricated on sapphire substrates. Laser-liftoff (LLO) processing was used to separate the active layers from sapphire substrates for several GaN-based HEMT devices, including AlGaN/GaN and InAlN/GaN heterostructures. Warpage of the LLO samples resulted from relaxation of the as-grown strain and strain arising from dielectric and metal depositions, and this strain was quantified by both Newton's rings and Raman spectroscopy methods. TEM analysis demonstrated that the LLO processing produced no detrimental effects on the quality of the epitaxial layers. TEM micrographs showed no evidence of either damage to the ~2 μm GaN epilayer generated threading defects. / Dissertation/Thesis / Ph.D. Physics 2012
53

AVALIAÇÃO DO COMPORTAMENTO DA TEMPERATURA DA SUPERFÍCIE TERRESTRE DO MUNICÍPIO DE CARIACICA (ES) EM 1985 E 2013.

JESUS, R. J. 04 July 2016 (has links)
Made available in DSpace on 2018-08-01T23:45:39Z (GMT). No. of bitstreams: 1 tese_10000_RAFAEL JUSTINO DE JESUS20161123-143752.pdf: 20477846 bytes, checksum: 6b6f59df3bf409837818bd7f32af541e (MD5) Previous issue date: 2016-07-04 / Esta dissertação de mestrado objetiva-se em avaliar o comportamento da Temperatura da Superfície Terrestre e identificar as possíveis Ilhas de Calor e Frescor de Superfície no Município de Cariacica - ES, correlacionando tais comportamentos frente às transformações no uso e cobertura da terra em 1985 e 2013. As avaliações foram subsidiadas pela proposta metodológica vinculada as geotecnologias - sobretudo o Sensoriamento Remoto, através das imagens dos satélites Landsat-5 e Landsat-8. A Temperatura da Superfície Terrestre foi obtida através dos coeficientes de calibração descritos por Chander et. al (2009), USGS (2015) e a sequencia metodológica utilizada por Collischonn (1998) e Silva (2014) que consideraram o fator emissividade na sua obtenção. Já o mapeamento do uso e cobertura da terra foi realizado através do classificador automático e híbrido MAXVER e as classes foram orientadas pelo Manual Técnico de Uso e Cobertura da Terra do IBGE, tais como: Afloramento de Rocha, Cobertura Vegetal, Corpo D‟Água, Malha Urbana, Pastagem/Solo Exposto e Sombra. Destaca-se que os procedimentos técnicos foram processados pelo software ArcMap 10.1 vinculado ao Laboratório de Cartografia Geográfica e Geotecnologias da Universidade Federal do Espírito Santo. Os resultados evidenciaram uma associação entre os intervalos mais quentes da temperatura com as classes Malha Urbana e Pastagem/Solo Exposto, sobretudo através do adensamento da área urbana presenciada em 2013; Já as áreas de temperaturas mais amenas foram significativamente associadas com as classes Cobertura Vegetal e Corpo D‟água. Espacialmente a área urbana foi aquela que registrou as maiores temperaturas e a área rural as mais amenas, todavia as Ilhas de Calor de Superfície foram identificadas em ambas às superfícies e distribuídas sem uma organização espacial. Neste sentido consideram-se as informações oriundas das técnicas de Sensoriamento Remoto como importantes ferramentas para subsidiar e complementar análises de clima urbano, além disso, podem ser utilizadas para o planejamento urbano de forma a orientar possíveis zoneamentos frente ao comportamento preteritamente encontrado num determinado espaço.
54

Perfil de susceptibilidade a antimicrobianos e avaliação fenotípica e genotípica da resistência a ß-lactâmicos (ESBL, AmpC e KPC) em enterobactérias isoladas de infecções do trato urinário

Dias, Vanessa Cordeiro 10 December 2010 (has links)
Submitted by Renata Lopes (renatasil82@gmail.com) on 2016-09-20T11:52:49Z No. of bitstreams: 1 vanessacordeirodias.pdf: 663329 bytes, checksum: a6ecc4c9fdb1483811c9adc9cb8fad2c (MD5) / Approved for entry into archive by Diamantino Mayra (mayra.diamantino@ufjf.edu.br) on 2016-09-26T20:23:46Z (GMT) No. of bitstreams: 1 vanessacordeirodias.pdf: 663329 bytes, checksum: a6ecc4c9fdb1483811c9adc9cb8fad2c (MD5) / Made available in DSpace on 2016-09-26T20:23:46Z (GMT). No. of bitstreams: 1 vanessacordeirodias.pdf: 663329 bytes, checksum: a6ecc4c9fdb1483811c9adc9cb8fad2c (MD5) Previous issue date: 2010-12-10 / FAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais / As infecções do trato urinário (ITU) são manifestações freqüentes na população, geralmente causadas por bacilos Gram-negativos. As β-lactamases são enzimas bacterianas que conferem resistência aos antimicrobianos do tipo β-lactâmicos (penicilinas, cefalosporinas, aztreonam e carbapenêmicos). A produção de β-lactamases de Espectro Estendido (ESBL) tem sido descrita como um importante mecanismo de resistência aos β-lactâmicos. De maneira geral, Escherichia coli e Klebsiella pneumoniae são as espécies bacterianas mais comumente encontradas produzindo ESBL, embora a detecção dessas enzimas já tenha sido observada em diversos gêneros dentro da família Enterobacteriaceae. O objetivo deste estudo foi avaliar os perfis de susceptibilidade a antimicrobianos e correlacionar os testes fenotípicos com a detecção de marcadores genéticos para produção de β-lactamases dos tipos ESBL, AmpC e KPC em enterobactérias associadas à etiologia de ITUs em pacientes atendidos em um Laboratório de Análises Clínicas da cidade de Juiz de Fora, MG. Para o estudo restrospectivo (20012008), 66.660 isolados de urina com suspeita de ITU foram analisadas, e após a identificação bioquímica, as linhagens de enterobactérias foram submetidas a testes de susceptibilidade aos antimicrobianos, pelo método de disco-difusão, de acordo com as normas do Clinical and Laboratory Standards Institute/CLSI. A detecção fenotípica da produção de ESBL foi feita através do teste de aproximação dos discos. Para o estudo prospectivo (2009), 12.304 amostras com suspeita de ITU foram avaliadas, e após a identificação bioquímica das linhagens, foram feitos os testes de susceptibilidade aos antimicrobianos e o teste de aproximação dos discos, para a detecção fenotípica da produção de ESBL. A identificação dos marcadores de β-lactamase (SHV, TEM, CTX-M, AMPc e KPC) foi feita por reação em cadeia da polimerase (PCR). De 416 linhagens produtoras de ESBL entre 2001- 2008, E. coli foi a mais freqüente (74,4%). Altos níveis de resistência foram obtidos para sulfazotrim, gentamicina e ciprofloxacina neste período. Todas as linhagens foram sensíveis ao imipenem. No estudo prospectivo, 105 linhagens produtoras de ESBL foram isoladas, sendo E. coli a mais freqüente (63%). Foi observado um alto índice de resistência a amoxacilina-clavulanato (80,8%), e aproximadamente 70% das amostras foram resistentes à associação trimetoprim/sulfametoxazol e as fluoroquionolonas (ciprofloxacina e ácido nalidíxico). Dentre as drogas utilizadas como substrato para detecção de ESBL, a cefotaxima foi o substrato com maior índice de resistência (86,6%), seguido de aztreonam (60,9%) e ceftazidima (55,2%). Entre as 105 linhagens recuperadas, todos os marcadores genéticos pesquisados para ESBL foram detectados. Considerando-se a freqüência de detecção dos marcadores genéticos, TEM foi o mais frequente (86,6%), seguido por SHV (59%), CTX-M (31,4%) e AMPc (27,6%). Em todas as linhagens bacterianas avaliadas, foi detectado pelo menos 1 dos marcadores genéticos associados à produção de β-lactamases (22,8%), 52,4% apresentaram 2 marcadores, 20% apresentaram 3 marcadores e 4,8% apresentaram 4 dos marcadores pesquisados. β-lactamases do tipo KPC não foram detectadas. O conhecimento da epidemiologia, dinâmica de disseminação e circulação destes marcadores genéticos de resistência a drogas constitui um dado clínico relevante, pois possibilita a instauração de uma terapia antimicrobiana mais adequada, bem como a construção de um banco de informações epidemiológicas, como ferramenta para contenção da expansão da disseminação dos genes de resistência aos antimicrobianos β-lactâmicos. / The urinary tract infections (UTI) are highly frequent within the population and usually caused by Gram-negative rods. The bacterial β-lactamases are enzymes which confer resistance against β-lactam antibiotics (penicillins, cephalosporins, aztreonam and carbapenems) amongst which Extended Spectrum β-Lactamases (ESBL) has been described as an important resistance mechanism to the β-lactam in Gram-negative bacteria. Generally, Escherichia coli and Klebsiella pneumoniae are the most frequent ESBL producing bacterial species, but its production by representatives of other bacterial genus within the Enterobacteriaceae family has already been documented. The aim of this study were to evaluate the antimicrobial susceptibility patterns and to correlate phenotypic tests with the detection of genetic markers for β-lactamases production such as ESBL, AmpC and KPC in enterobacteria associated to the UTI etiology in patients assisted at a Clinical Analyses Laboratory in Juiz de Fora, MG. From a retrospective study (2001-2008), 66.660 urine samples were analyzed, and the biochemically identified bacteria were submitted to antibiotic susceptibility testing by the disk-diffusion method, according to the Clinical Laboratory Standards Institute/CLSI guidelines. Further, phenotypic detection of the ESBL production was carried out through the disk approximation test. From a prospective study (2009), 12.304 samples were evaluated, and after the microbial identification, antibiotic susceptibility tests and disk approximation assays were performed, for ESBL phenotypic detection. Identification of β-lactamase genetic markers (SHV, TEM, CTX-M, AMPc and KPC) were performed through polymerase chain reaction (PCR). Out of 416 ESBL producing bacteria identified between 2001 and 2008, E. coli was the most frequent (74.4%). High resistance levels were obtained for trimethopim-sulfamethoxazole, gentamicin and ciprofloxacin in this period. All of the strains were sensitive to imipenem. Regarding the prospective study, 105 ESBL producing bacteria were isolated, being E. coli the most frequent (63%). A high resistance rate was observed against amoxacilin/clavulanic-acid (80.8%), and almost 70% of the samples were resistant to the association trimethopim-sulfamethoxazole and the fluoroquionolones (ciprofloxacin and nalidixic acid). Among the drugs for ESBL detection, the cefotaxime was the substrate with the highest resistance rate (86.6%), followed by aztreonam (60.9%) and ceftazidime (55.2%). Among these strains, all of the researched genetic markers for ESBL were detected. In regard to the frequency of detection of the genetic markers, TEM was the most frequent (86.6%), following by SHV (59%), CTX-M (31.4%) and AmpC (27.6%). In all of the bacterial strains it was detected at least 1 of the genetic markers associated to the production of β –lactamases. Two markers were detected in 52.4% and in 20% and 48%, at least 3 or 4 markers were detected, respectively. The KPC type β -lactamase was not detected. The knowledge about the epidemiology, spread dynamics and circulation of these resistance genetic markers to drugs among the different bacterial populations constitutes a relevant issue and makes possible the establishment of a more appropriated chemotherapy. Besides, the generation of basic epidemiological information may sustain for contention of the antimicrobial resistance and the spread of resistant genetic markers related to inactivation of β-lactam drugs.
55

Transmission Electron Microscopy Characterization of Photovoltaic Semiconductor Materials

January 2020 (has links)
abstract: The research of this dissertation has primarily involved using transmission electron microscopy (TEM) techniques to study several semiconductor materials considered promising for future photovoltaic device applications. Layers of gallium phosphide (GaP) grown on silicon (Si) substrates were characterized by TEM and aberration-corrected scanning transmission electron microscopy (AC-STEM). High defect densities were observed for samples with GaP layer thicknesses 250nm and above. Anti-phase boundaries (APBs) within the GaP layers were observed at interfaces with the Si surfaces which were neither atomically flat nor abrupt, contradicting conventional understanding of APB formation. Microcrystalline-Si (μc-Si) layers grown on crystalline-Si (c-Si) substrates were investigated. Without nanoparticle seeding, an undesired amorphous-Si (a-Si) layer grew below the μc-Si layer. With seeding, the undesired a-Si layer grew above the μc-Si layer, but μc-Si growth proceeded immediately at the c-Si surface. Ellipsometry measurements of percent crystallinity did not match TEM images, but qualitative agreement was found between TEM results and Ultraviolet Raman spectroscopy. TEM and Xray spectroscopy were used to study metal-induced crystallization and layer exchange for aluminum/ germanium (Al/Ge). Only two samples definitively exhibited both Ge crystallization and layer exchange, and neither process was complete in either sample. The results were finally considered as inconclusive since no reliable path towards layer exchange and crystallization was established. Plan-view TEM images of indium arsenide (InAs) quantum dots with gallium arsenide antimonide (GaAsSb) spacer layers revealed the termination of some threading dislocations in a sample with spacer-layer thicknesses of 2nm, while a sample with 15-nm-thick spacer layers showed a dense, cross-hatched pattern. Cross-sectional TEM images of samples with 5-nm and 10-nm spacer-layer thicknesses showed less layer undulation in the latter sample. These observations supported photoluminescence (PL) and Xray diffraction (XRD) results, which indicated that GaAsSb spacer layers with 10-nm thickness yielded the highest quality material for photovoltaic device applications. a-Si/c-Si samples treated by hydrogen plasma were investigated using high-resolution TEM. No obvious structural differences were observed that would account for the large differences measured in minority carrier lifetimes. This key result suggested that other factors such as point defects, hydrogen content, or interface charge must be affecting the lifetimes. / Dissertation/Thesis / Doctoral Dissertation Physics 2020
56

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

Mumthaz Muhammed, Mufasila 11 March 2018 (has links)
III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique properties that combine high transparency and conductivity, is used for the first time in the development of high-quality vertical III-nitride devices, which can be cost-effective for large-scale production. In addition, hybridizing GaN with emerging materials, mainly perovskite, is shown to extend the functionality of III-nitride applications. As a part of this investigation, high-performance and high-responsivity fast perovskite/GaN-based UV-visible broadband photodetectors were developed. State-of-the-art GaN epilayers grown on (-201)-oriented β-Ga2O3 using AlN and GaN buffer layers are discussed, and their high optical quality without using growth enhancement techniques is demonstrated. In particular, a low lattice mismatch (⁓4.7%) between GaN and the substrate results in a low density of dislocations ~4.8Å~107 cm−2. To demonstrates the effect of (-201)-oriented β-Ga2O3 substrate on the quality of III-nitride alloys, high-quality ternary alloy InxGa1−xN film is studied, followed by the growth of high quality InxGa1−xN/GaN single and multiple quantum wells (QWs). The optical characterization and carrier dynamics by photoluminescence (PL) and time-resolved PL measurements were subsequently performed. Lastly, to investigate the performance of a vertical emitting device based on InGaN/GaN multiple QWs grown on (-201)-oriented β-Ga2O3 substrate, high-efficiency vertical-injection emitting device is developed and extensively investigated. The conductive nature of the substrate developed as a part of this study yields better current and heat characteristics, while its transparency ensures high light extraction. The straightforward and direct growth process employed does not require a high-cost complex fabrication process. Finally, a broadband photodetector composed of the emerging CH3NH3PbI3 perovskite with the p-GaN, is developed. The findings reported in this dissertation demonstrate the superior performance of CH3NH3PbI3/GaN photodetectors produced by simple and cost-effective solution processed spray-coating method. In particular, it is demonstrated that perovskite/GaN device can work as a self-powered photodetector.
57

Investigation of Polymer Systems in Solutions with Electron Microscopy and Scattering Methods

Schellkopf, Leonard 13 May 2015 (has links)
This work is focused on the visualization and thus in the aid in finding explanations for the behavior of polymer structures as they exist in solution. For this aim, preparation and imaging techniques based on cryo-TEM protocols were developed for a large variety of polymeric specimens using new commercially available devices and the results were compared with the findings of other means of structural investigations. The systems used in this work were chosen, as their investigations can be adapted to other polymer systems by slight adaptation of the preparation procedures.
58

Entwicklung einer neuen Technologie zur Probenpräparation für die Transmissions-Elektronenmikroskopie (TEM) auf der Basis der Ionenfeinstrahlbearbeitung

Bischoff, Lothar, Köhler, Bernd January 2001 (has links)
Aufgabe des Projektes war die Entwicklung einer neuen Technologie zur Probenpräparation für die Transmissions-Elektronenmikroskopie (TEM) auf der Basis der Ionenfeinstrahlbearbei-tung. Dazu wurden Prozesse der ionenstrahlgestützten Abtragung (Sputtern), der Abschei-dung, des Probenhandling sowie systemeigener Komponenten untersucht. Als Alternative zur Ga- Quelle wurde eine Flüssigmetall-Ionenquelle auf der Basis einer AuGeSi Legierung entwi-ckelt, charakterisiert und in der FIB 4400 eingesetzt. Um eine automatische Bearbeitung bei der Herstellung von TEM-Lamellen zu ermöglichen, erfolgte eine Modifikation der FIB-4400 Software. Das LabView Programm wurde entsprechend modifi-ziert und zusätzlich um nützliche Komponenten ergänzt. Abtragsraten auf der Basis der Volumenverlustmethode wurden experimentell bestimmt. Diese Werte dienen als Ausgangspunkt für eine weiter ausbaubare Datensammlung, die die entwi-ckelte Prozessautomatisierung verfeinert. Für den Tranfer von TEM -Lamellen, die aus dem Volumen präpariert werden, wurde ein spe-zieller lift-off Manipulator entwickelt, gebaut und getestet. Es wurde ein Angebotskatalog erarbeitet, der anhand von Applikationsbeispielen mit verschie-denen Anforderungen (raue Oberflächen, Hochauflösung, poröse Materialien, Materialien mit verminderter Leitfähigkeit) die Kooperationsmöglichkeiten im Dresdener Raum im Rahmen des Materialforschungsverbundes aufzeigt.
59

Identification of platelet activating factor (PAF) receptor in equine spermatozoa and its role in motility, capacitation and the acrosome reaction

Odeh, Awatef 30 October 2002 (has links)
Platelet activating factor (PAF) is a unique signaling phospholipid that has many biologic properties in addition to platelet activation. PAF roles in reproduction involve ovulation, fertilization, embryo development, implantation and parturition. It may also serve as a biomarker for normal sperm function. The presence of PAF receptor on the spermatozoa of 10 stallions was investigated by immunofluorescence microscopy. Statistical analysis revealed that the fluorescence intensity, FI (Mean+/-SEM), in the post- acrosomal region (FI= 2.60+/-0.15) was significantly higher (P< 0.01) than that in any other region of stallion spermatozoa. The effect of synthetic PAF on stallion spermatozoal motility, capacitation, and the acrosome reaction (AR) were evaluated. Treatment of 10 stallion semen samples with 10 â 4 to 10 â 13 M PAF resulted in statistically significant differences in motility and capacitation (r2 = 0.81 and 0.83 respectively). The concentration of PAF, incubation time and their interaction were highly significant (P< 0.01) for their effect on motility. Concentrations of PAF ranging from 10-9 to10-11 M were able to induce capacitation. Following capacitation in vitro with PAF, and induction of the acrosomal reaction by progesterone, transmission electron microscopy (TEM) was conducted on the spermatozoa of 3 stallions, to detect the true AR. Differences in PAF concentrations were highly significant as indicated by R-square (for intact: 97.2, reacted: 89.8, and for vesiculated: 98.1). Treating spermatozoa from 3 stallions with the PAF antagonist FR-49175 inhibited calcium release and fluorescence intensity with a median inhibitory concentration (IC50) of 10-7.5 M (r2=0.82, P<0.01) and 10-8 M (r2=0.92, P<0.01) respectively, suggesting a receptor mediated process for the mechanism of action of PAF. Although the exact mechanisms of PAF action on equine spermatozoa remain unclear, it is widely reported that PAF acts by a receptor-mediated mechanism and that the PAF receptor is a member of the family of G-protein coupled receptors with phospholipase C as the effector. Since the limited success in equine ART (e.g. IVF) is in part due to lack of efficient treatment of stallion spermatozoa for capacitation, PAF may be useful to help capacitate stallion spermatozoa. Without proper capacitation, spermatozoa are unable to initiate the acrosome reaction which is a prerequisite for fertilization. / Ph. D.
60

A TEM investigation of high T<sub>c</sub> superconductors and related perovskites

Roy, Tapan January 1990 (has links)
No description available.

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