The focus of this study is mono-layer polymer light emitting diode (PLED). The emitting layer is poly-p-phenylenebenzobisoxazole (PBO). PBO is a fully conjugated heterocyclic aromatic rigid-rod polymer. Anode is indium-tin-oxide (ITO). Cathode is aluminum (Al). We used UV epoxy resin to package PLED devices, then measured current-voltage response, electroluminescence (EL) emission, and device lifetime. We demonstrate that the packaged mono-layer PBO LED reduced its demise from water and oxygen. Device lifetime increased from 1 hour to several hundred hours. At a larger bias voltage or current, emission intensity and device efficiency became higher. But decay rate increased leading to shortened device lifetime. Device temperature appeared linearly with current density. A red shift of the EL emission was observed. The £fmax. of emission spectra moved from 534 nm (initial) to 582 nm (after 100 hrs). After thermal annealing at 120¢J for ten hours, threshold voltage increased from 5 V to 12 V, current density decreased to several 10 mA/cm2, luminous intensity improved several ten times to 10-2 cd/m2, emission color changed from yellow-green to orange, luminous efficiency improved from 10-7 to 10-4 cd/A, but device lifetime declined to less than 20 hrs.

The fiber-optics communication device with a plastic optical fiber (POF) has become a technology of increasing interests. The attenuation of commercial available POF has been improved to tens of decibels per kilometer. Due to its flexibility and high alignment efficiency, it has been widely used in many areas. In this study, different end shapes of POF have been proposed to increase the coupling efficiency of a POF from a surface emitting LED. Both the experiments and a ray tracing simulation are performed to investigate the coupling scheme. Experimental results also illustrate the feasibility of using ray tracing model in POF end shapes design. The effect of ball fiber lens on coupling efficiency is studied first. Lens material is EPO-TEK 353ND two parts epoxy. The result indicates that the ball fiber lens can improve the coupling efficiency significantly. A more impact end shape modified from the ball fiber lens is proposed in this study, i.e. a thin tip-rounded fiber lens. Numerical and experimental results show the tip can work as good as a ball fiber lens does. A reflection-styled end shape has also been proposed in this thesis, i.e. a taper-ended POF. In this design, the taper edge serves as a reflector to bend the rays incident on it by total internal reflection. The maximum efficiency achieves a great improvement from the previous design. Further study on the various fiber types with different sizes and numerical apertures have also been studied by the ray tracing model.

Polymer photovoltaic cell (PV cell) utilizes a polymer to absorb photons for generating excitons. When excitons are separated into electrons and holes, the device has the photovoltaic effect. Polymer light emitting diode (PLED) injects electrons and holes respectively from cathode and anode into a polymer emission layer. Some of the electrons and the holes would recombine to induce light emission. This research used a heterocyclic aromatic rigid-rod polymer poly-p-phenylene- benzobisoxazole (PBO) as the opto-electronic layer, and a conducting material of poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid) (PEDOT:PSS) as the hole transport layer. PV cells were fabricated using indium-tin-oxide (ITO) as anode and aluminium as cathode. Same layer arrangement was applied for PLEDs. These two kinds of devices were measured for electrical and optical response. It was evidenced that the addition of PEDOT:PSS layer facilitated the separation of excitons into electrons and holes at the PBO/PEDOT:PSS interface. Insertion of a LiF layer between PBO layer and Al cathode reduced their energy band gap and facilitated charge transport leading to an enhanced efficiency for PV cells and PLEDs. Thickness variations were found on spun PBO layer. According to emission intensity, we knew that the PBO layer quality was significant for electroluminescence. Introduction of a PEDOT:PSS layer improved the interface between ITO and PBO. The thickness of PEDOT:PSS layer depended on the ITO surface roughness. With a PEDOT:PSS layer, the opto-electronic efficiency of PV cell and PLED was improved.

Luminescent emission of non-fully conjugated homopolymers was successfully demonstrated as light emitting diodes (LEDs) in this research. Coil-like heterocyclic aromatic poly[2,2-(2,5-dialkyloxyphenylene)-4-4¡¦-hexafluoroisopropanebibenzoxazo- les] (6F-PBO-CnOTpA, with n = 10, 15, and 20) was synthesized, and polymer composites of 6F-PBO-CnOTpA was in-situ synthesized with acidified multi-wall carbon nanotube (MWNT- COOH). The non-fully conjugated coil-like heterocyclic aromatic homopolymer was synthesized by reacting 2,2,bis-(3-amino-4-hydroxy[henyl]-hexafluoropropane with 2,5-dialkyloxyterephthalic acid (CnOTpA) for 6F-PBO-CnOTpA, with n = 10, 15, and 20. In addition, MWNT was acidified for connecting the carboxylic group (-COOH) to reduce its aspect ratio and entropy induced aggregation. MWNT-COOH was analyzed using elemental analysis (EA) and viscometry to validate the effects of acidification period. The EA result seemed to suggest that the oxygen content increased, and the carbon and the hydrogen contents decreased with acidification period. The inherent viscosity (£binh) decreased according to acidification period suggesting that the aspect ratio was indeed decreased. A hole transport layer of PEDOT¡GPSS was applied for multi-layer LEDs,. The LEDs all showed a threshold voltage about 4 V also for the composites of 6F-PBO-CnOTpA in-situ polymerized with MWNT-COOH. The 6F-PBO-CnOTpA LEDs with and without MWNT-COOH showed an electroluminescence emission range of 400 to 750 nm.

Poly-p-phenylenebenzobisoxazole (PBO) and carbon nanotube (CNT) contain fully conjugated rod like backbone entailing excellent mechanical properties, thermo -oxidative stability and solvent resistance. Rigid-rod PBO is commonly processed by dissolving in methanesulfonic acid or Lewis acid. A CNT of multi-wall carbon nanotube (MWNT) was dissolved in a Lewis acid solution of PBO for dispersion, and then spun for thin film. MWNT concentration in the films was from zero up to 5 wt. %. Compared to that of pure PBO film, all PBO/MWNT composite films retained same but enhanced UV-Vis absorption peaks, according to MWNT concentration, showing that PBO and MWNT did not have overlapping electron orbitals affecting their energy gaps. The composite films were excited at 325 nm using a He-Cd laser for photoluminescence (PL) emission. All PL spectra had maximum intensity at 540 nm indicative of yellow-green light emission. The composite films were fabricated as light emitting diodes using indium-tin-oxide/glass as substrate and anode, as well as vacuum evaporated Al as cathode for respectively hole and electron injectors. In these light emitting devices, MWNT doped PBO would decrease threshold voltage for about 2 V. Up to 0.1 wt. % of MWNT, the device emission current was increased two orders of magnitude than those of the devices without MWNT. Further increase of MWNT caused a successive decrease in electroluminescence emission intensity attributed to a quench effect from aggregations of MWNTs. UV epoxy resin was applied to package the mono-layer and bilayer PBO light emitting devices. The UV epoxy resin had some gas release during encapsulation. The devices were packaged with vacuum and without vacuum encapsulation. It was demonstrated that the device encapsulation reduced its demise from water and oxygen. The vacuum encapsulation could remove gaseous volatile of the device to inhibit oxygen and moisture to prolong device lifetime. The main degradation of light emitting device was the oxidization of cathode. The interactions between nitrogen of PBO and H2O caused the formation of hydrogen bonding at room temperature. Oxygen and moisture diffused into PBO polymer and were suspected to form mid-gap state for the polymer. The mid energy band disappeared upon heat treatment before encapsulation. A device under a higher bias voltage was found to have a shorter lifetime, but a larger EL emission intensity. The EL emission intensity was not a constant under a constant current bias. The vacuum encapsulated device had two or twenty times lifetime than, respectively, the device encapsulation without vacuum evacuation or in ambient conditions. The sandwich structure of ITO/PBO/Al had no observable photovoltaic effect due to insufficient exciton separation into electrons and holes. Poly(2,3-dihydro thieno-1,4-dioxin):polystyrenesulfonate (PEDOT:PSS), a hole transferring medium, was spun into a thin-film between PBO and indium-tin-oxide to facilitate photovoltaic (PV) effect by forming a donor-acceptor interlayer to separate and to transport photoinduced charges. Optimum PBO thickness for the PV heterojunctions was about 71 nm at which the hole transferring PEDOT:PSS generated the maximum short circuit current (Isc) at a thickness of 115 nm. By using a layer of lithium fluoride (LiF) as an electron transferring layer adhering to Al cathode, the most open circuit voltage (Voc) and the maximum short circuit current (Isc) were achieved with a LiF thickness of 1-2 nm due to possible electric dipole effect leading to an increase of Voc from 0.7 V to 0.92 V and of Isc from about 0.1

Zinc oxide, with its direct wide bandgap and high exciton binding energy, is a promising material for optoelectronic devices. Quantum confinement effect and high surface to volume ratio of the nanowires imparts unique properties to them and makes them appealing for researchers. So far, zinc oxide nanowires have been used to fabricate various optoelectronic devices such as light emitting diodes, solar cells, sensors and photodetectors. To fabricate those optoelectronic devices, many different synthesis methods such as metal organic chemical vapor deposition, chemical vapor deposition, pulsed laser deposition, electrodeposition and hydrothermal method have been explored. Among them, hydrothermal method is the most feasible one in terms of simplicity and low cost. In this thesis, hydrothermal method was chosen to synthesize zinc oxide nanowires. Synthesized zinc oxide nanowires were then used as electrically active components in light emitting diodes and ultraviolet photodetectors. Hybrid light emitting diodes, composed of inorganic/organic hybrids are appealing due to their flexibility, lightweight nature and low cost production methods. Beside the zinc oxide nanowires, complementary poly [2- methoxy -5- (2- ethylhexyloxy) - 1,4 -phenylenevinylene] MEH-PPV and poly (9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) hole conducting polymers were used to fabricate hybrid light emitting diodes in this work. Optoelectronic properties of the fabricated light emitting diodes were investigated. Zinc oxide emits light within a wide range in the visible region due to its near band edge and deep level emissions. Utilizing this property, violet-white light emitting diodes were fabricated and characterized. Moreover, to take advantage over the responsivity of zinc oxide to ultraviolet light, ultraviolet photodetectors utilizing hydrothermally grown zinc oxide nanowires were fabricated. Single walled carbon nanotube (SWNT) thin films were used as transparent electrodes for the photodetectors. Optoelectronic properties of the transparent and flexible devices were investigated. A high on-off current ratio around 260000 and low decay time about 16 seconds were obtained. Results obtained in this thesis reveal the great potential of the use of solution grown zinc oxide nanowires in various optoelectronic devices that are flexible and transparent.

Molecular light emitting diode, including organic light emitting diode (OLED) and polymer light emitting diode (PLED), is commonly consist of one or several molecular layer(s) sandwiched between an anode and a cathode. When electrons and holes are injected respectively from cathode and anode into the molecular layer by a bias voltage, these two types of carriers migrate towards each other and a fraction of them recombine to form light emission. The focus of this study is electrode modifications of molecular light emitting diode. The electrode modifications include using a low work function cathode material, a high work function anode material or inserting a very thin electrode modifier between molecular layer and electrode for enhancing the electron or the hole injection efficiency leading to higher electroluminescence emission and/or lower threshold voltage. Low work function metal, Mg, could effectively reduce the electron injection barrier between molecular layer and cathode leading to better emission brightness and threshold voltage. A monolayer rigid-rod poly-p-phenylenebenzobisthiazole (PBT) or poly-p-phenylenebenzobis- oxazole (PBO) PLED with Mg cathode demonstrated a low threshold voltage of 3 V. Besides, a very thin layer of LiF (or Al2O3) inserted between molecular layer and Al cathode was applied to enhance the electron injection efficiency leading to a stronger electroluminescence intensity and a low threshold voltage of 2.8 V. On anode modification, a thin PBO layer was inserted between molecular layer and the indium-tin-oxide (ITO) substrate for improving the electroluminescence emission brightness and the threshold voltage. The PBO modified anode could effectively enhance the electro- luminescence intensity and lower the threshold voltage to 1 V~ 3 V on several mono- or multi-layer molecular light emitting diodes. Besides, a novel ITO substrate cleaning method via acid treatment was applied for increasing the work function of ITO to effectively enhance the hole injection efficiency.

This research represents the first effort to apply vertical cavity surface emitting lasers (VCSELs) to the monitoring of interferometric fiber optic sensors. Modulation of the drive current causes thermal tuning of the laser light frequency. Reflection of this frequency-modulated light from a fiber Fabry-Perot interferometer (FFPI) sensor produces fringe patterns which can be used to measure the optical path difference of the sensor. Spectral characteristics were measured for 850nm VCSELs to determine the combination of dc bias current, modulation current amplitude and modulation frequency for which single mode VCSEL operation and regular fringe patterns are achieved. The response characteristics of FFPI sensors were determined experimentally for square, triangular, saw-tooth waveforms at frequencies from 10kHz to 100kHz. The dependence of VCSEL frequency on the dc bias current was determined from spectral measurements to be ~165GHz/mA. An independent measurement of this quantity based on counting fringes from the FFPI sensor as the laser modulated was in good agreement with this value. The effect of optical feedback into the laser was also studied. By observing the fringe shift as the FFPI sensor was heated, a fractional change in optical length with temperature of 6.95 X 10-6/°C was determined in good agreement with previous measurements on a 1300nm single mode fiber. The performance of 850nm VCSEL/FFPI systems was compared with their counterparts using 1300nm distributed feedback (DFB) lasers. The results of these experiments show that the 850nm VCSEL/FFPI combination gives regular fringe patterns at much lower bias current and modulating current amplitudes than their 1300nm DFB/FFPI counterparts.

A heterocyclic aromatic rigid-rod polymer poly-p-phenylene-benzobisoxazole (PBO) was applied as the opto-electronic layer¡Fand a conducting material of poly(3,4-ethylenedioxythio-phene):poly(4-styrenesulfonic acid) (PEDOT: PSS) was used as the hole transport layer. Aluminum (Al) and indium tin oxide (ITO) were served as device cathode and anode¡Arespectively, fabricated into a bi-layer structure of ITO/PEDOT:PSS/PBO/Al for electrical and luminescence responses. This research demonstrated an increase of current density and a decrease of threshold voltage with a decrease of PBO layer thickness from 90 nm to 27 nm to facilitate electron tunneling and electron-hole recombination. With a lower spin coating speed, polymer chain would aggregate and inter-penetrate resulted in red-shift of electroluminescence (EL) emission spectrum. Furthermore, micro-cavity effect might influence EL spectrum by varying layer thickness. Modulation of PBO layer thickness led to tunable EL emission color. It was also demonstrated that an increase of current density and a slightly decrease of threshold voltage with a PEDOT:PSS film thickness changing from 96 nm to 17 nm at a constant PBO layer thickness of 90 nm. Micro-cavity effect thus influenced EL emission for a tunable emission color. Photolithography was applied to obtain ITO substrate of grating depth of periodic variation and then coated with a PEDOT:PSS leading to a grated PEDOT:PSS layer of periodic thickness. This led to ITO/PEDOT:PSS/PBO/Al device showing broadened EL emission spectra.

Optical beam induced current (OBIC) mapping has found wide-spread applications in characterizing semiconductor devices and integrated circuitry. In this study, we have used a two-photon scanning microscope to investigate InGaN light emitting diodes (LED). The defects induced by electrostatic discharge (ESD) can be clearly identified by DC-OBIC images. Additionally, we have combined an E-O modulator and a high frequency phase sensitive lock-in amplifier to conduct time-resolved study on the dynamical properties of the LEDs. The defects also exhibit different delay time when compared with the normal parts.