Research on nanomaterials has become increasingly popular because of their unique physical, chemical, optical and catalytic properties compared to their bulk counterparts. Therefore, many efforts have been made to synthesize multidimensional nanostructures for new and efficient nanodevices. Among those materials, zinc oxide (ZnO), has gained substantial attention owing to many outstanding properties. ZnO besides its wide bandgap of 3.34 eV exhibits a relatively large exciton binding energy (60 meV) at room temperature which is attractive for optoelectronic applications. Likewise, cupric oxide (CuO), having a narrow band gap of 1.2 eV and a variety of chemo-physical properties that are attractive in many fields. Moreover, composite nanostructures of these two oxides (CuO/ZnO) may pave the way for various new applications. This thesis can be divided into three parts concerning the synthesis, characterization and applications of ZnO, CuO and their composite nanostructures. In the first part the synthesis, characterization and the fabrication of ZnO nanorods based hybrid light emitting diodes (LEDs) are discussed. The low temperature chemical growth method was used to synthesize ZnO nanorods on different substrates, specifically on flexible non-crystalline substrates. Hybrid LEDs based on ZnO nanorods combined with p-type polymers were fabricated at low temperature to examine the advantage of both materials. A single and blended light emissive polymers layer was studied for controlling the quality of the emitted white light. The second part deals with the synthesis of CuO nanostructures (NSs) which were then used to fabricate pH sensors and exploit these NSs as a catalyst for degradation of organic dyes. The fabricated pH sensor exhibited a linear response and good potential stability. Furthermore, the catalytic properties of petals and flowers like CuO NSs in the degradation of organic dyes were studied. The results showed that the catalytic reactivity of the CuO is strongly depending on its shape. In the third part, an attempt to combine the advantages of both ZnO and CuO NSs was performed by developing a two-step chemical growth method to synthesize the composite NSs. The synthesized CuO/ZnO composite NSs revealed an extended light absorption and enhanced defect related visible emission.

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In the last decades, investigations of organic light-emitting diodes (OLEDs) have tackled several key challenges of this lighting technology and have brought the electron to photon conversion efficiency close to unity. However, currently only 20% to 30% of the photons can typically be extracted from OLED structures, as total internal reflection traps the major amount of the generated light inside the devices. This work focuses on the optimization of the optical properties of top-emitting OLEDs, in which the emission is directed away from the substrate. In this case, opaque materials, e.g. a metal foil or a display backplane can be used as substrate as well. Even though top-emitting OLEDs are often preferred for applications such as displays, two main challenges remain: the application of light extraction structures and the deposition of highly transparent materials as top electrode, without harming the organic layers below. Both issues are addressed in this work. First, top-emitting OLEDs are deposited on top of periodically corrugated light outcoupling structures, in order to extract internally trapped light modes by Bragg scattering and to investigate the basic scattering mechanisms in these devices. It is shown for the first time that the electrical performance is maintained in corrugated top-emitting OLEDs deposited on top of light extraction structures. Furthermore, as no adverse effects to the internal quantum efficiency have been observed, the additional emission from previously trapped light modes directly increases the device efficiency. It has been proven that the spectral emission of corrugated OLEDs is determined by the interference of all light modes inside the air light-cone, including the observation of destructive interference and anti-crossing phenomena. The formation of a coherently coupled mode pair of the initial radiative cavity mode and a Bragg scattered mode has been first observed, when grating structures with an aspect ratio > 0.2 are applied. There, the radiative cavity mode partially vanishes. The observation and analysis of such new emission phenomena in corrugated top-emitting OLEDs has been essential in obtaining a detailed insight on fundamental scattering processes as well as for the optimization and control of the spectral emission by light extraction structures. Second, the adverse impact of using only moderately transparent silver electrodes in white top-emitting OLEDs has been compensated improving the metal film morphology, as the organic materials often prevent a replacement by state-of-the-art electrodes, like Indium-tin-oxide (ITO). A high surface energy Au wetting layer, also in combination with MoO3, deposited underneath the Ag leads to smooth, homogeneous, and closed films. This allows to decrease the silver thickness from the state-of-the-art 15 nm to 3 nm, which has the advantage of increasing the transmittance significantly while maintaining a high conductivity. Thereby, a transmittance comparable to the ITO benchmark has been reached in the wavelength regime of the emitters. White top-emitting OLEDs using the wetting layer electrodes outperform state-of-the art top-emitting devices with neat Ag top electrodes, by improving the angular colorstability, the color rendering, and the device efficiency, further reaching sightly improved characteristics compared to references with ITO bottom electrode. The enormous potential of wetting layer metal electrodes in improving the performance of OLEDs has been further validated in inverted top-emitting devices, which are preferred for display applications, as well as transparent OLEDs, in which the brittle ITO electrode is replaced by a wetting layer electrode. Combining both concepts, wetting layer electrodes and light extraction structures, allows for the optimization of the grating-OLED system. The impact of destructive mode interference has been reduced and thus the efficiency increased by a decrease of the top electrode thickness, which would have not been achieved without a wetting layer. The optimization of corrugated white top-emitting OLEDs with a top electrode of only 2 nm gold and 7 nm silver on top of a grating with depth of 150 nm and period of 0.8 µm have yielded a reliable device performance and increased efficiency by a factor of 1.85 compared to a planar reference (5.0% to 9.1% EQE at 1000 cd/m2). This enhancement is comparable to common light extraction structures, such as half-sphere lenses or microlens foils, which are typically restricted to bottom-emitting devices. Overall, the deposition of top-emitting OLEDs on top of light extraction structures finally allow for an efficient extraction of internally trapped light modes from these devices, while maintaining a high device yield. Finally, the investigations have resulted in a significant efficiency improvement of top-emitting OLEDs and the compensation of drawbacks (optimization of the white light emission and the extraction of internal light modes) in comparison to the bottom-emitting devices. The investigated concepts are beneficial for OLEDs in general, since the replacement of the brittle ITO electrodes and the fabrication of roll-to-roll processing compatible light extraction structures are also desirable for bottom-emitting, or transparent OLEDs.

Technological developments in the area of high power LED light sources have enabled their utilization in general illumination applications. Along with this advancement comes the need for progressive thermal management strategies in order to ensure device performance and reliability. Minimizing an LED's junction temperature is done by minimizing the total system's thermal resistance. For actively cooled systems, this may essentially be achieved by simultaneously engineering the conduction through the heat sink and creating a well-designed flow pattern over suitable convective surface area. While such systems are routinely used in cooling microelectronics, their use in LED lighting systems encounter additional constraints which must be accounted for in the design of the cooling system. These are typically driven by the size, shape, and building codes involved with the lighting industry, and thus influence the design of drop-in replacement LED fixtures. Employing LED systems for customary down-lighting applications may require shrouded radial fin heat sinks to increase the heat transfer while reducing the space requirement for active cooling. Most lighting is already in some form of housing, and the ability to concurrently optimize these housings for thermal and optical performance could accelerate the widespread implementation of cost-efficient, environmentally-friendly solid-state lighting. In response, this research investigated the use of conical, cylindrical, square, and pyramidal shrouds with pin/radial fin heat sink designs for the thermal management of high power LED sources. Numerical simulations using FLUENT were executed in order to account for details of the air flow, pressure drop, and pumping power, as well as the heat transfer and temperature distributions throughout the system. The LEDs were modeled as a distributed heat source of 25 - 75 W on a central portion of the various heat sinks. Combinations of device junction temperature and pumping power were used to assess the performance of shrouded heat sink designs for their use in air-cooled, down-lighting LED fixtures.

Photovoltaics (PV) is fast emerging as an attractive renewable energy technology due to concerns of global warming, pollution and scarcity of fossil fuel supplies. However to compete in the global energy market, solar cells need to be cheaper and more energy efficient. Silicon is the favorite semiconductor used in solar photovoltaic cells because of its ubiquity and established technology, but due to its indirect bandgap silicon is a poor absorber and light emitter. Thin film cells play an important role in low cost photovoltaics, but at the cost of reduced efficiencies when compared to wafer based cells. There remains much untapped potential in thin-film solar cells which this work has attempted to exploit through exploring novel approaches of enhancing the efficiency of thin film cells using the optical properties of sub-wavelength metal nanoparticles. Metals are considered as strong absorbers of light because of their large free-electron density. How can metals improve light trapping in solar cells? This question has raised several eyebrows and this thesis is an attempt to show that metal nanoparticles can be useful in producing efficient solar cells. Subwavelength metal particles support surface modes called surface plasmons when light is incident on them, which cause the particles to strongly scatter light into the underlying waveguide or substrate, enhancing absorption. The process of coupling thin film silicon waveguide modes to plasmonic metals using unpolarised light at normal incidence is applied to silicon-based solar cells and light emitting diodes, and enhanced photocurrent and electroluminescence is realized with potential for further optimisation and improvement. The results from this study correspond to a current increase of up to 19% from planar wafer based cells and up to 33% increase from 1.25 micron thin-film silicon-on-insulator structures for the AM1.5 global spectrum. We also report for the first time an up to twelve fold increase in electroluminescence signal from 95nm thick light-emitting diodes. From the results we conclude that this method which involves simple techniques of nanoparticle deposition and characterization could hold important implications in the improvement of thin-film silicon cell absorption / emission efficiencies where conventional methods of light trapping are not feasible, resulting in promising near-term applications of surface plasmons in photovoltaics and optoelectronics.

Thesis (Ph.D.) -- McMaster University, 1999. / Includes bibliographical references (leaves 98-103). Also available via World Wide Web.

Thesis (Ph. D.)--University of Hong Kong, 2006. / Title proper from title frame. Also available in printed format.

Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2006. / Buck, John, Committee Co-Chair ; Ferguson, Ian, Committee Chair ; Krishnamurthy,Vikram, Committee Member ; Chang, Gee-Kung, Committee Member ; Callen, W. Russell Jr., Committee Member ; Summers, Christopher, Committee Member.

This dissertation investigates various design metrologies on designing freeform surfaces for LED illumination applications. The major goal of this dissertation is to study designing freeform optical surfaces to redistribute the radiance (which can be simplified as intensity distribution for point source) of LED sources for various applications. Nowadays many applications, such as road lighting systems, automotive headlights, projection displays and medical illuminators, require an accurate control of the intensity distribution. Freeform optical lens is commonly used in illumination system because there are more freedoms in controlling the ray direction. Design methods for systems with rotational and translational symmetry were well discussed in the 1930's. However, designing freeform optical lenses or reflectors required to illuminate targets without such symmetries have been proved to be much more challenging. For the simplest case when the source is an ideal point source, the determination of the freeform surface in a rigorous manner usually leads to the tedious Monge-Ampère second order nonlinear partial different equation, which cannot be solved with standard numerical integration techniques. Instead of solving the differential equation, ray mapping is an easier and more efficient method in controlling one or more freeform surfaces for prescribed irradiance patterns. In this dissertation, we investigate the ray mapping metrologies in different coordinate systems to meet the integrability condition for generating smooth and continuous freeform surfaces. To improve the illumination efficiency and uniformity, we propose a composite ray mapping method for designing the total internal reflective (TIR) freeform lens for non-rotational illumination. Another method called "double pole" ray mapping method is also proposed to improve system performance. The ray mapping designs developed for the point source do not work well for extended sources, we have investigated different design methodologies including optimization method, deconvolution method and feedback modification method to design freeform optical surfaces for extended sources.

Ce travail de doctorat est dédié à l’étude des mécanismes régissant l’interaction lumière-matière dans des dispositifs optoélectroniques à base d’alliages (Al,Ga,In,)N. Diverses compositions de ces alliages sont assemblées en structures multicouches de matériaux d’épaisseurs nanométriques afin d’obtenir une émission à plus grande longueur d’onde que le bleu, couleur pour laquelle la technologie est mature depuis plus de vingt ans. Il s’agit de réaliser des émetteurs efficaces de lumière jaune, verte ou blanche (avec une approche alternative au pompage optique de luminophore par une diode bleue). Les solutions solides assemblées pour obtenir des émissions à grandes longueur d’onde sont à base de GaN et de Ga0.8In0.2N, matériaux pour lesquels les mailles cristallographiques sont désaccordées. Lorsqu’elles sont déposées sur un substrat ou un pseudo-substrat de GaN, matériau pour lequel les dopages n et p sont maitrisés et permettent l’injection électrique des porteurs, les tranches de Ga0.8In0.2N subissent de très fortes compressions dans leur plan de croissance et l’énergie élastique est relaxée par la formation de défauts délétères pour le rendement lumineux. Nous avons construit des hétéro-structures plus complexes en intercalant une couche complémentaire d’Al0.2Ga0.8N afin de réduire la densité d’énergie élastique globale. L’insertion de telles couches améliore la qualité cristalline et augmente leur rendement optique. Nous avons mesuré le rendement quantique interne en utilisant la spectroscopie de photoluminescence résolue en temps et une analyse des temps de déclins par une approche de type Lotka-Volterra des équations de recombinaison pour obtenir les taux de recombinaisons radiatifs et non-radiatifs. Nous avons montré quantitativement comment les champs électriques internes résultant du contraste de polarisation électrique aux interfaces et les recombinaisons non-radiatives de type Schockley-Read-Hall contribuent à définir le rendement quantique à faible densité d’excitations (optique ou électrique). L’objectif est l’obtention d’une émission spontanée intense pour une densité d’excitation modérée. Nous avons donc conduit une campagne d’expériences en variant l’intensité d’injection. Nous avons montré que l’effet Auger est le facteur dominant régissant la chute du rendement quantique interne sous fortes densités d’injection. Nous avons étudié diverses architectures à simple puits quantique ou à puits quantiques multiples émettant à des longueurs d’onde identiques pour quantifier l’influence spécifique de l’effet Stark confiné quantique. Nous avons corrélé l’apparition d’un seuil d’excitation au-delà duquel domine la recombinaison non-radiative de type Auger avec l’augmentation du temps de recombinaison radiative et de l’énergie de localisation des porteurs dans l’alliage inhomogène. Nous arrivons à la conclusion que la localisation des porteurs produite par le champ électrique aux interfaces et les fluctuations de la composition chimique de Ga0.8In0.2N contribuent de concert, facilitant l’interaction répulsive électron-électron et la recombinaison non-radiative Auger nnp. Nous avons montré que le modèle ABC permet de bien décrire la physique du phénomène si ses trois paramètres tiennent compte des effets d’écrantages sous injections modérées et des effets de remplissage de l’espace des phases sous fortes injections. Enfin, nous nous sommes écartés de l’étude des structures traditionnellement épitaxiées selon le plan polaire (0001) pour choisir des plans d’épitaxie semi-polaire (11-22). Dans ces conditions, il a été nécessaire de fabriquer des puits quantiques en Ga0.65In0.35N. Nous avons montré que la quasi-absence d’effet Stark confiné quantique augmente de manière très significative le seuil d’excitation au-delà duquel domine la recombinaison non-radiative de type Auger. Cette amélioration par rapport aux échantillons épitaxiés selon le plan (0001) est d’autant plus marquée que la longueur d’onde émise est grande. / Non renseigné