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In this work, we have explored 2D semiconducting transition metal dichalcogenides (TMDs), black phosphorus (BP), and graphene for various applications using liquid and mechanical exfoliation routes. The topical areas of interest that motivate our work include considering factors such as device integration, stability, doping, and the effect of gasses to modulate the electronic transport characteristics of the underlying 2D materials. In the first area, we have integrated solution-processed transparent conducting oxides (TCOs), specifically indium-doped tin oxide (ITO) with BP, which is a commonly used TCO for solar cell devices. Here we have found surface treatment of glass substrates with a plasma before spin-coating the solution-processed ITO, to be effective in improving coverage and uniformity of the ITO film by promoting wettability and film adhesion. The maximum transmittance obtained was measured to be ~75% in the visible region, while electrical measurements made on BP/ITO heterostructures showed improved transport characteristics compared to the bare ITO film. Within the integration realm, inkjet-printing of BP and MoS2 p-n hetero-junctions on standard ITO glass substrates in a vertical architecture was also demonstrated. To address the issue of stability which some 2D materials such as BP face, we experimented with ionic liquids (ILs) to passivation the hydrophilic surface of BP to minimize its oxidative degradation. The enhanced stability of BP was inferred through Raman spectroscopy and scanning probe microscopy techniques, where no observable changes in the A1g and A2g Raman vibrational modes were observed for the BP films passivated with ILs over time under ambient conditions. On the other hand, a blue-shift in these Raman modes was evident for unpassivated samples. Atomic force microscopy measurements on the unpassivated samples clearly revealed the difference in surface characteristics through localized regions of degradation that intensified with time which was absent in IL passivated BP samples. The electronic device measurements for IL coated BP devices showed a more stabilized Ids−Vds characteristic in the 5.4 K to 335 K temperature range. Prototypical demonstrations of stabilized ILs/BP devices at ambient printed on flexible polyimide substrates were also successfully made. At the same time, doping is one of the essential steps required for the modulation of carrier density and electronic transport in electronic and optoelectronic devices, which is the third topical area we have addressed in this work with semiconducting TMDs. Of the conventional approaches used to dope 3D semiconductors, ion-implantation is commonly adopted but given the ultra-thin nature of 2D materials, this approach is not feasible as it causes severe damage to the delicate crystalline lattice of ultra-thin 2D membranes. Instead, we have used plasma-based doping routes with UV-ozone treatement and solution processing using 1,2 dichloroethane, to characterize the temperature-dependent two-terminal and three-terminal electronic and optoelectronic transport of mechanically exfoliated 2D MoS2 and WSe2. A significant difference was seen in the optoelectronic properties between the two dopants, owing to differences in their respective doping mechanisms and the intrinsic structural attributes of the exfoliated flakes. A significant reduction in barrier height was evident after doping using both techniques in MoS2, while an increase in barrier height after soaking in 1,2 dichloroethane was seen in WSe2. Lastly, in the fourth topical area for sensing devices, we have studied the effect of gas-flow in inkjet-printed and spin-coated graphene and MoS2 to modulate the electronic transport for the 2D materials since their increased surface area is an ideal platform to observe interactions with external stimuli, in this case, in-coming gas species. Here, the chamber pressure and change in current with flow of gas was measured in the steady-state, as well as time-dependent dynamic transport toward nitrogen and carbon dioxide. We observed significant differences in the electrical response of mono-elemental graphene and binary MoS2, owing to differences in microstructure and joule heating response to the ambient gas. In conclusion, the findings obtained from our work will provide an important framework to help guide strategies in further improving integration schemes, stability, doping and sensing behavior driven by the unique structural attributes inherent to 2D materials for high-performance devices in the future.

<p>Copper (Cu) has been used as the main conductor in interconnects due to its low resistivity. However, because of its high diffusivity, diffusion barriers/liners (tantalum nitride/tantalum; TaN/Ta) must be incorporated to surround Cu wires. Otherwise, Cu ions/atoms will drift/diffuse through the inter-metal dielectric (IMD) that separates two distinct interconnects, resulting in circuit shorting and chip failures. The scaling limit of conventional Cu diffusion barriers/liners has become the bottleneck for interconnect technology, which in turn limits the IC performance. The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology nodes. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross-section and they are much more resistive than Cu, the effective conductance of an ultra-scaled interconnect will be compromised by the thick bilayer. Therefore, two dimensional (2D) layered materials have been explored as diffusion barrier alternatives owing to their atomically thin body thicknesses. However, many of the proposed 2D barriers are prepared at too high temperatures to be compatible with the back-end-of-line (BEOL) technology. In addition, as important as the diffusion barrier properties, the liner properties of 2D materials must be evaluated, which has not yet been pursued. </p> The objective of the thesis is to develop a 2D barrier/liner that overcomes the issues mentioned. Therefore, we first visit various 2D layered materials to understand their fundamental capability as barrier candidates through theoretical calculations. Among the candidates, hexagonal-boron-nitride (h-BN) and molybdenum disulfide (MoS₂) are selected for experimental studies. In addition to studying their fundamental properties to know their potential, we have also developed techniques that can realize low-temperature-grown 2D layered materials. Metal-organic chemical vapor deposition (MOCVD) is adopted for the synthesis of BEOL-compatible MoS₂. The electrical test results demonstrate the promises of integrating 2D layered materials to the state-of-the-art interconnect technology. Furthermore, by considering not only diffusion barrier properties but also liner properties, we develop another 2D layered material, tantalum sulfide (TaS_x), using plasma-enhanced chemical vapor deposition (PECVD). The TaS_x is promising in both barrier and liner aspects and is BEOL-compatible. Therefore, we believed that the conventional TaN/Ta bilayer stack can be replaced with an ultra-thin TaS_x layer to maximize the Cu volume for ultra-scaled interconnects and improve the performance. Furthermore, Since via resistance has become the bottleneck for overall interconnect performance, we study the vertical conduction of TaS_x. Both the intrinsic and extrinsic properties of this material are investigated and engineering approaches to improve the vertical conduction are also tested. Finally, we explore the possibilities of benefiting from 2D materials in other applications and propose directions for future studies.

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<p>Since the successful exfoliation of graphene, two-dimensional (2D) materials have attracted a lot of scientific interest due to their electronic, chemical, and mechanical properties. Due their reduced dimensionality, these 2D materials exhibit superior mechanical and optoelectronic properties when compared to their bulk counterparts. Within the family of 2D materials, the ultrathin transition metal dichalcogenides (TMDs) such as Tungsten diselenide and Molybdenum disulphide have gained significant attention due to their chemical versatility and tunability. Furthermore, it is possible to leverage the distinct characteristic properties of these 2D materials, which are held together by van der Waals forces, by stacking different 2D layers on top of each other resulting in van der Waals (vdW) heterostructures. Due to the absence of feasible methods to effectively deform the crystal structures of these 2D materials and vdW heterostructures, their mechanical properties have not been thoroughly understood. The atomistic simulations can effectively capture the material behavior at the nanoscale level and help us not only not only understand the mechanical properties of these materials but also aid in the development of tailored processes to tune the material properties for the design of novel metamaterials. Using atomistic simulations, we develop the process - property relationships which can guide the direction of experimentation efforts, thereby making the process of discovering and designing new metamaterials efficient. </p><p>In this work, we have used laser shock nanostraining technique which is a scalable approach to modulate the optomechanical properties of 2D materials and vdW materials for practical semiconductor industry applications. The deformation mechanisms of 2D materials such as graphene, boron nitride (BN) and TMDs such as WSe₂ and MoS₂ are examined by employing a laser shocking process. We report studies on crystal structure deformation of multilayered WSe₂ and monolayer graphene at ultra-high strain rate using laser shock . The laser shocking process generates high pressure at GPa level, causing asymmetric 3D straining in graphene and a novel kinked-like locking structure in multilayered WSe₂. The deformation processes and related mechanical behaviors in laser shocked 2D materials are examined using atomistic simulations. Moiré heterostructures can be obtained by introducing a twist angle between these 2D layers, which can result into vdW materials with different properties, thereby adding an additional degree of freedom in the process-property design approach. We were able to successfully create a tunable stain profile in 2D materials and vdW heterostructures to modulate the local properties such as friction, and bandgap by controlling the level of laser shock, twist angle between the 2D layers and by applying appropriate laser shock pressure . We thus extend this knowledge to further explore the pathways of strain modulation using a combination of laser shocking process, moiré engineering, and strain engineering in 2D materials consisting of graphene, BN, and MoS₂ and to develop the process - property relationships in vdW materials. </p><p>In summary, this research presents a systematic understanding of the effect of laser shocking process on the van der Waals materials and demonstrates the modulation of mechanical and opto-electronic property using laser nanostraining approach. This understanding provides us with opportunities for deterministic design of 2D materials with controllable properties for semiconductor and nanoelectronics applications.</p>

Die rasanten Fortschritte bei der Entwicklung neuartiger 2D-Materialien haben in den letzten Jahren auch das Forschungsfeld der Spintronik stetig bereichert aufgrund der vielseitigen physikalischen Eigenschaften und der Flexibilität hinsichtlich der Realisierung von Heterostrukturen. Das erst kürzlich entdeckte metastabile und geschichtete Material alpha-FeGe2 trägt das Potenzial, in die Klasse der bekannten 2D Materialien aufgenommen zu werden. In dieser Dissertation werden die elektrischen und magnetischen Eigenschaften von alpha-FeGe2 diskutiert, basierend auf elektrischen Transportmessungen bei unterschiedlichen äußeren Magnetfeldern und Temperaturen. Zur Untersuchung von magnetoresistiven Effekten wurden Spinventilstrukturen mit alpha-FeGe2 als Trennmaterial zwischen zwei metallische Ferromagnete verwendet. Es wird gezeigt, dass alpha-FeGe2 eine dickenabhängige kritische Temperatur besitzt, die bei etwa 100 K liegt und mit einem magnetischen Phasenübergang von der antiferromagnetischen Phase für T > 100 K in die ferromagnetische Phase bei T < 100 K verknüpft ist. Dieser Phasenübergang wird von Berechnungen aus der Dichtefunktionaltheorie (DFT) gestützt. Es wird gezeigt, dass die magnetische Ordnung in der alpha-FeGe2-Trennschicht einen starken Einfluss auf die Spinventilsignale ausübt. Insbesondere spielt hierbei die Auswirkung auf die magnetische Interschichtkopllung zwischen den ferromagnetischen Elektroden aus Fe3Si oder Co2FeSi eine entscheidende Rolle. Die magnetische Kopplung an der Grenzfläche zwischen antiferromagnetischem alpha-FeGe2 und Fe3Si führt zu einer Anisotropie in den Spinventilsignalen hinsichtlich der Orientierung des externen Magnetfeldes. Diese Anisotropie wird durch ein komplexes Zusammenspiel zwischen der Magnetisierung der ferromagnetischen Elektroden und der magnetischen Vorzugsrichtung des antiferromagnetischen alpha-FeGe2, die durch den sog. Néelvektor beschrieben wird, diskutiert. / The rapid progress in the development of new 2D materials have also enriched spintronic research in recent years, thanks to their versatile physical properties and flexibility with regard to the design of heterostructures. The prominent examples graphene and transition metal dichalcogenides (TMDs) have the prospect to represent the basis of future spintronic applications, in particular due to their tunability and multifunctionality. The recently discovered metastable layered material alpha-FeGe2 is a potential candidate for being added to this class of materials. In this work, the electrical and magnetic properties of alpha-FeGe2 are studied, based on results from electrical transport measurements at different external magnetic fields and temperatures. For the investigation of magnetoresistive effects, spin valve devices containing alpha-FeGe2 as a spacer layer between two metallic ferromagnets have been utilized. It is shown that alpha-FeGe2 exhibits a thickens dependent critical temperature around 100 K at which it undergoes a magnetic phase transition from an antiferromagnetic state at T > 100 K to a ferromagnetic state at T < 100 K. This phase transition is also predicted by density functional theory (DFT) calculations and reflected in a disappearing spin valve signal at low temperatures. It is demonstrated that the magnetic phase of the alpha-FeGe2 spacer strongly influences the performance of spin valves, particularly via the impact on the magnetic interlayer coupling between the ferromagnetic electrodes made of Fe3Si or Co2FeSi. The magnetic coupling at the interface between antiferromagnetic alpha-FeGe2 and Fe3Si was found to induce anisotropies in the spin valve signal with regard to the external magnetic field orientation. This anisotropy is explained in terms of a complex interplay between the misalignment between the ferromagnetic electrodes and the magnetically preferred direction of the antiferromagentic alpha-FeGe2 described by the Néel vector.

The development of a new deposition technique called evaporative vapor deposition (EVD) is reported, allowing deposition and formation of atomically-thin, large area materials on arbitrary substrates. This work focuses on the highly popular monolayer material – graphene oxide (GO). A droplet of a GO solution is formed on a heated polymer substrate, and maintained at steady-state evaporation (all droplet parameters are held constant over time). The polymer substrate is laser patterned to control the droplet's contact line dynamics and the droplet's contact angle is maintained using a computer controlled syringe pump. A room temperature silicon wafer is translated through the vapor field of the evaporating GO droplet using a computer controlled translation stage. Dropwise condensation formed on the silicon wafer is monitored using both optical and infrared cameras. The condensation rate is measured to be ~50pL/mm2?s – 500 pL/mm2?s and dependent on the substrate translation speed and height difference between the droplet's apex and substrate surface. Nano-sized GO flakes carried through the vapor phase are captured in the condensate, depositing on the translating wafer. Deposition rate is dependent on the stability of the solution and droplet condensate size. Characterization with Raman spectroscopy show expected shifts for graphene/graphite. The presented EVD technique is promising toward formation of large scale 2D materials with applications to developing new technologies.

The development of metals that can overcome the strength-ductility-weight trade-off has been an ongoing challenge in engineering for many decades. A promising option for making such materials are Metal matrix composites (MMCs). MMCs contain dispersions of reinforcement in the form of fibers, particles, or platelets that significantly improve their thermal, electrical, or mechanical performance. This dissertation focuses on reinforcement with two-dimensional (2D) materials due to their unprecedented mechanical properties. For instance, compared to steel, the most well-studied 2D material, graphene, is nearly forty times stronger (130 GPa) and five times stiffer (1 TPa). Examples of reinforcement by graphene have achieved increases in strength of 60% due to load transfer at the metal/graphene interface and dislocation blocking by the graphene. However, the superior mechanical properties of graphene are not fully transferred to the matrix in conventional MMCs, a phenomenon known as the "valley of death." In an effort to develop key insight into how the relationships between composite design, processing, structure, properties, and mechanics can be used to more effectively transfer the intrinsic mechanical properties of reinforcements to bulk composite materials, nanolayered composite systems made of Ni, Cu, and NiTi reinforced with graphene or 2D hexagonal boron nitride h-BN is studied using experimental techniques and molecular dynamics (MD) simulations. / Doctor of Philosophy / The design of new metals with concurrently improved strength and ductility has been an enduring goal in engineering for many decades. The utilization of components made with these new materials would reduce the weight of structures without sacrificing their performance. Such materials have the potential to revolutionize many industries, from electronics to aerospace. Traditional methods of improving the properties of metals by thermomechanical processing have approached a point where only minor performance improvements can be achieved. The development of Metal matrix composites (MMCs) is among the best approaches to achieving the strength-ductility goal. Metal matrix composites are a class of materials containing reinforcements of dissimilar materials that significantly improve their thermal conductivity, electrical conductivity, or mechanical performance. Reinforcements are typically in the form of dispersed fibers, particles, or platelets. The ideal reinforcement materials have superior mechanical properties compared to the metal matrix, a high surface area, and a strong interfacial bond with the matrix. Two-dimensional (2D) materials (materials made up of a single to a few layers of ordered atoms) are attractive for reinforcement in composite materials because they possess unprecedented intrinsic properties. The most well-studied 2D material, graphene, is made of a single layer of carbon atoms arranged in a hexagonal honeycomb pattern. It is nearly forty times stronger (130 GPa) and five times stiffer (1 TPa) than steel. Examples of graphene reinforcing have shown increases in strength of 60% due to load transfer at the metal/graphene interface and dislocation blocking by the graphene. Despite their exceptional mechanical properties, the superior mechanical properties of graphene are not fully transferred to the matrix when incorporated into conventional metal matrix composites. This phenomenon, known as the "valley of death," refers to the loss of mechanical performance at different length scales. One cause of this phenomenon is the difficulty of evenly dispersing the reinforcements in the matrix using traditional fabrication techniques. Another is the presence of dislocations in the metal matrix, which cause very large local lattice strains in the graphene. This atomistic-scale deformation at the interface between the metal and the graphene can significantly weaken it, leading to failure at low strains before reaching its intrinsic failure stress and strain. This dissertation aims to provide insight into how the relationships between composites' design, processing, structure, properties, and mechanics can be used to transfer intrinsic mechanical properties of reinforcements to bulk composite materials more effectively. For this, nanolayered composite systems of Ni and Cu reinforced with graphene or 2D h-BN were studied using experimental techniques and molecular dynamics (MD) simulations to elucidate the underlying mechanisms behind the composites' material structure and mechanical behavior. Additionally, we explore the incorporation of graphene in a metallic matrix that does not deform through dislocations (or shear bands), such as the shape memory alloy nickel-titanium ( Nitinol or NiTi), to avoid low strain failure of the metal/graphene interface. This theoretical strengthening mechanism is investigated by designing and fabricating NiTi/graphene composites.

Die optischen Eigenschaften von Übergangsmetall-Dichalcogeniden (TMDC) werden durch Exzitonen (exc) dominiert, was auf den Quanteneinschluss und die reduzierte Abschirmung zurückzuführen ist, die für ihre 2D-Natur charakteristisch sind. Das Coulomb-Screening spielt eine grundlegende Rolle bei der Bestimmung der stationären und dynamischen Eigenschaften solcher Materialien. Zeitaufgelöste optische Spektroskopie ist ein grundlegendes Instrument, um die Rolle der Abschirmung in der Nicht-Gleichgewichtsphysik von TMDC zu untersuchen. Ich untersuche WS2-Monoschichten auf verschiedenen Substraten mit zeitaufgelöstem Transmissions-/Reflexionskontrast. Ich stelle einen Formalismus vor, der einen zuverlässigen Vergleich der dynamischen Reaktion der Exzitonen unabhängig von Probe, Substrat und Messtechnik ermöglicht. Mit diesem Formalismus werden die von der Pump-Photonen-Energie und der Fluenz abhängige Verschiebung und Verbreiterung des Exziton-Peaks extrahiert und mit Hilfe eines Zwei-/Drei-Niveau-Modells reproduziert. Mit Hilfe dieses Modells konnte die Konkurrenz zwischen dynamischer Abschirmung der Quasiteilchen, Streuung und thermischen Effekten entschlüsselt werden. Die Verbreiterung wird durch QFC-exc (exc-exc) Streuung bestimmt, wenn QFC (exc) im System vorhanden sind. Darüber hinaus induzieren QFC (exc) eine globale Rot-(Blau-)Verschiebung der Exzitonenresonanz, die mit einer effektiven QFC (exc) dynamischen, abschirmungsinduzierten Renormalisierung der Bandlücke (Verringerung der Bindungsenergie) reproduziert wird. Schließlich wird der Einfluss der statischen Abschirmung auf die Reaktion der Exzitonen untersucht. Die dynamische exc-Abschirmung ist bei höherer Substratpermittivität verstärkt und wird versuchsweise auf einen höheren Grad der Delokalisierung des Exzitons zurückgeführt. Letztlich trägt diese Arbeit zu einem umfassenden Bild der Nicht-Gleichgewichtsdynamik und der Rolle der Abschirmung in TMDC bei. / The optical properties of transition metal dichalcogenides (TMDC) are dominated by excitons, due to quantum confinement and reduced screening characteristic of their 2D nature. Exactly the screening of the Coulomb interaction has a fundamental role in determining the steady-state and dynamic properties of such materials. Time-resolved optical spectroscopies are a fundamental tool to investigate the phenomena governing the non-equilibrium physics of TMDC materials. Nevertheless, the quantitative role of the screening in the non-equilibrium response of the TMDC is yet to be understood. I investigate monolayers WS2 placed on various substrates with time-resolved transmittance/reflectance contrast. I report a formalism that allows the reliable comparison of the exciton dynamic response independently of sample, substrate and measurement technique. With this formalism, the pump-photon energy and fluence-dependent exciton peak shift and broadening are extracted and reproduced using a basic two/three-level model. Through this model the competition of quasiparticle dynamic screening, scattering and thermal effects was unravelled. The broadening is governed by QFC-exciton (exciton-exciton) scattering when QFC (excitons) are present in the system. Furthermore, QFC (excitons) induce a global red-(blue-)shift of the exciton resonance, reproduced with an effective QFC (excitons) dynamic screening-induced bandgap renormalization (binding energy reduction). Finally, the static screening influence on the non-equilibrium exciton response is addressed. Scattering and QFC dynamic screening are unaffected in different dielectric environments. On the contrary, the exciton dynamic screening is enhanced for higher substrate permittivity and possibly due to a higher degree of delocalization of the exciton. Ultimately, this thesis contributes to a comprehensive picture of the non-equilibrium dynamics and the role of screening in TMDC.