We present the synthesis and characterisation of novel single organic molecules known as phenoxylene borazines and borazatruxenes. Using temperature-dependant and concentration-dependant 1H NMR, we probe the supramolecular aggregation of these molecules in solution. Finally, we synthesise 2D hybrid material comprised of electron delocalised benzene rings and electron localised borazine rings. Using a combination of solid-state 11B and 13C NMR techniques, Raman spectroscopy and XPS, we confirm the presence of benzene and borazine regions in these novel materials.

<p></p><p></p><p>The unprecedented properties of 2D materials such as graphene and MoS2 have been researched extensively [1,2] for a range of applications including nanoscale electronic and optoelectronic devices [3–6]. Their unique physical and electronic properties promise them as the next generation materials for electrodes and other functional units in nanostructured devices. However, successful incorporation of 2D materials into devices entails development of high resolution patterning techniques that are applicable to 2D materials. Patterning at the sub-10 nm scale is particularly of great interest as the next technology nodes require patterning of (semi)conductors and insulators at 7 nm and 5 nm scales for nanoelectronics. It will also benefit organic photovoltaic cells as phase segregation of p/n-type semiconducting polymers on 2D electrodes at length scales smaller than the typical exciton diffusion length (10 nm)</p> <p>is expected to improve the charge separation efficiency [7].</p><br><p></p><p></p><p>Characterizing locally modulated properties of non-ovalently functionalized 2D materials requires high-resolution imaging techniques capable of extracting measurements of various physical/chemical properties. One such method is scanning probe microscopy (SPM) [18–21]. In Chapter 1, we present a brief review of SPM modalities, some of which are used to characterize interfacial properties, such as conductivity and local contact potential differences that can be modulated by amphiphilic assemblies [17, 22]. Atomic force microscopy (AFM) is one of main techniques that we use to determine topography. All imaging in this work were performed in attractive AC mode [23,24] in order to minimize disruption to the self-assembly of the amphiphiles by the scanning tip.</p><br><p></p><p></p><p>One challenge of using SAMs for locally modulated functionalization is that the proximity to the nonpolar interface can modify the behavior of the functionalities present on the surface in conjunction with the steric hindrance of 2D molecular assemblies. For instance, ionizable functional groups, one of the strongest local modulators of surface chemistry, undergo substantial pKa shifts (in some cases, > 5 units) at nonpolar interfaces, limiting their ability to ionize. In order to apply molecular assembly to create 2D chemical patterns, we needed to design alternative structures that can avoid such penalties against the intrinsic properties of functionalities present in the assemblies. Among amphiphiles, we observed that the chiral centers of phospholipids have the potential of elevating the terminal functional group in the head from the surface for improved accessibility. We refer to this type of assembly as a ’sitting’ phase. Chapter 2 describes sitting phase assembly of phospholipids; the projection of the terminal functionality allows it to maintain solution phase-like behavior while the dual alkyl tails provide additional stabilizing interactions with the substrates. Given the diversity of phospholipid architecture [25], the sitting phase assembly suggests the possibility of greatly diversifying the orthogonality of the chemical patterns, allowing highly precise control over surface functionalities.</p><br><p></p><p></p><p>While a variety of methods including drop-casting [26–28] and microcontact printing [29] have been used previously by others for noncovalent assembly of materials on the surface, they mostly address patterning scale in the sub-μm range. Here, we utilize Langmuir-Schaefer(LS) transfer, which has been historically used to transfer standing phase multilayers [30], and lying-down domains of PCDA at < 100 nm scales in the interest of molecular electronics [14, 31–33], as our sample preparation technique. LS transfer is remarkable in that the transferred molecules relinquish their pre-existing interactions in the standing phase at air-water interface to undergo ∼ 90◦ rotation and assemble into the striped phase on a substrate. This introduces the possibility of modulating local transfer rate across the substrate by manipulating local environment of the molecules. Thus, LS transfer has the potential to offer spatial control over the noncovalent chemical functionalization of the 2D substrate, essential in device applications.</p><br><p></p><p></p><p>In Chapter 3 and 4, We make comparative studies of various experimental factors such as surface pressure, temperature and molecular interactions that affect the efficiency of LS conversion. Considering the energetics of the transfer process, we predicted that the rate of transfer from the air-water interface to the substrate should be the highest from the regions around defects, which would be the energetically</p> <p>least stable regions of the Langmuir film [34, 35]. In Langmuir films, two phases of lipid assemblies—liquid expanded (LE) and liquid condensed (LC)—often coexist at the low surface pressures (< 10 mN/m) used for sample preparation. Hence, we hypothesized that the microscale structural heterogeneity of Langmuir films could be translated into microscale patterns in the transferred film on HOPG. We compare the transfer rates between LE and LC phases and investigate the impacts of physical conditions during LS transfer such as temperature, packing density, dipping rate and contact time to conclude that local destabilization of Langmuir films leads to increased transfer efficiency. (Chapter 3)</p><p><br></p><p></p><p>As in the case of lipid membranes that reorganize routinely based on the structure of the constituent molecules [36–38], the structure of Langmuir films is strongly dependent on the molecular structures of the constituent molecules [39–43]. Accordingly, we expected the molecular structures/interactions to provide additional control over the LS transfer process. In Chapter 4, we compare domain morphologies and the average coverages between three single chain amphiphiles and two phospholipids, each</p><p></p><p> </p><p>of which contain hydrogen bonding motifs of varying strengths. We show that by influencing the adsorption and diffusion rates, molecular architecture indeed influences LS conversion efficiency and subsequent assembly on the substrate. The presence of strong lateral interactions limits transfer and diffusion, forming vacancies in the transferred films with smaller domain sizes while weaker intermolecular interactions enabled high transfer efficiencies.</p><p></p><p><br></p><p></p>

This thesis, submitted to the University of Manchester, covers a range of topics related to current research in two-dimensional materials under the title: 'Investigations into the interfacial interaction of graphene with hexagonal boron nitride.'In the last decade, two-dimensional materials have become a rich source of original research and potential applications. The main advantage lies in the ability to produce novel composite structures, so-called 'layered heterostructures', which are only a few atomic layers thick. One can utilise the unique properties of several species of crystal separately, or how they interact to realise a diverse range of uses. Two such crystals are graphene and hexagonal boron nitride. Hexagonal boron nitride has, so far, been used primarily as a substrate for graphene, allowing researchers to get the most out of graphene's impressive individual properties. However, in this thesis, the non-trivial van der Waals interaction between graphene and hexagonal boron nitride is examined. The interface potential reveals itself as a relatively large-scale, orientation-dependant superlattice, which is described in chapters 1 and 2.I In Chapter 4, the effect of this superlattice is examined by measurement of its effect upon the electrons in graphene, where its modulation leads to the creation of second and third generation Dirac points, revealing Hofstadter's Butterfly. As well as an excellent example of the physics possible with graphene, it also presents a new tool with which to create novel devices possessing tailored electronic properties. II In chapter 5, the consequential effect of the superlattice potential on the structure of graphene is studied. Results are discussed within the framework of the Frenkel-Kontorova model for a chain of atoms on a static background potential. Results are consistent with relaxation of the graphene structure leading to the formation of a commensurate ground state. This has exciting consequences for the production of heterostructures by demonstrating that alignment angle can have large effects upon the physical properties of the crystals. III In chapter 6, the van der Waals potential is shown to be responsible for the self-alignment of the two crystals. This effect is important for the fabrication of perfectly aligned devices and may lead to new applications based on nanoscale motion.

Ces dernières décennies, l'urgence croissante de la crise énergétique et la prise de conscience qu'une grande partie de l'énergie utilisée dans le monde est dissipée sous forme de chaleur ont provoqué un engouement pour le développement de modules thermoélectriques performants. Ces dispositifs pourraient récupérer la chaleur provenant de procédés industriels ou d'autres sources, transformant un gradient de température en voltage grâce à l'effet Seebeck. Les matériaux thermoélectriques performants doivent posséder une faible conductivité thermique, une haute conductivité électrique et un grand coefficient Seebeck. L'optimisation simultanée de ces paramètres est un défi majeur pour la physique de la matière condensée et la science des matériaux. Dans l'optique d'améliorer les propriétés thermoélectriques de plusieurs matériaux prometteurs, nous explorons plusieurs stratégies dans lesquelles les défauts (substitutions atomiques, lacunes…), le désordre et le confinement dimensionnel jouent un rôle central. Nous réalisons des calculs en théorie de la fonctionnelle densité et des projections sur des orbitales de Wannier afin de construire des Hamiltoniens et des matrices dynamiques réalistes décrivant leur structure électronique et vibrationnelle dans l'espace réel. Ces paramètres sont ensuite utilisés pour calculer les propriétés de transport thermoélectrique en utilisant le formalisme de Kubo, l'équation de Boltzmann, le formalisme de Landauer et la méthode Chebyshev polynomial Green's function, qui permet un traitement exact du désordre. Nous étudions les propriétés de transport électronique et les performances thermoélectriques de deux matériaux prometteurs pour la production d'énergie à hautes températures, le titanate de strontium et l'oxyde de titane rutile. Nous obtenons un très bon accord entre nos prédictions et un grand nombre de données expérimentales. Nous montrons que l'augmentation du coefficient Seebeck observée dans les superlayers de titanate de strontium, jusque-là attribuée à des effets de confinement quantique, est en réalité très bien expliquée par l'hypothèse d'électrons délocalisés. Nous explorons les effets généraux des états résonant sur le transport électronique dans le cadre d'une étude modèle, et nous trouvons une augmentation d'un facteur six des performances thermoélectriques. Nous examinons ensuite le cas particulier du titanate de strontium, et nous montrons que les performances sont détruites par des effets de localisation si des atomes de Vanadium sont introduits comme impuretés résonantes. Nous étudions l'influence des défauts dans les matériaux bidimensionnels. Contrairement aux adatomes, nous montrons que les substitutions dans les dichalcogénures de métaux de transition ont pour effet de localiser les porteurs de charge. Nous étudions l'effet des lacunes sur le transport de phonons dans le graphène, et nous déterminons les taux de diffusion phonon-lacune. Nous obtenons un très bon accord entre notre théorie et des mesures de conductivité thermique dans des échantillons de graphène irradiés et de tailles finies / Over the past decades, the increasingly pressing need for clean energy sources and the realization that a huge proportion of the world energy consumption is wasted in heat have prompted great interest in developing efficient thermoelectric generation modules. These devices could harvest waste heat from industrial processes or other sources, turning a temperature gradient into a voltage through the Seebeck effect. Efficient thermoelectric materials should exhibit a low thermal conductivity, a high electrical conductivity and a high Seebeck coefficient. Simultaneously optimizing these parameters is a great challenge of condensed matter physics and materials science. With a view to enhance the thermoelectric properties of several promising materials, we explore several strategies in which defects (atomic substitutions, vacancies…), disorder and dimensional confinement play a crucial role. We perform density functional theory calculations and projections on Wannier orbitals to construct realistic Hamiltonians and dynamical matrices describing their electronic and vibrational structure in real space. These parameters are then used to compute the thermoelectric transport properties using the Kubo formalism, the Boltzmann transport equation, the Landauer formalism, and the Chebyshev polynomial Green's function method that allows for an exact treatment of disorder. We investigate the electronic transport properties and thermoelectric performances of two promising materials for high-temperature power generation, strontium titanate and rutile titanium dioxide. Comparison of our predictions with a wealth of experimental data yields a very good agreement. We show that the increase of the Seebeck coefficient observed in strontium titanate superlayers, until now attributed to quantum confinement effects, is in fact well explained assuming delocalized electrons. The general effects of resonant states on electronic transport are explored in a model study, showing a sixfold increase of the thermoelectric performances. The particular case of strontium titanate is then examined, and localization effects are shown to destroy the performances if Vanadium atoms are introduced as resonant impurities. The influence of defects in two-dimensional materials is investigated. Contrary to adatoms, substitutions in transition metal dichalcogenides are shown to localize the charge carriers. We study the effect of vacancies on phonon transport in graphene, and determine the phonon-vacancy scattering rate. Comparison with thermal conductivity data for irradiated and finite-size graphene samples yields a very good agreement between theory and experiments

Le travail réalisé durant cette thèse s’est axé sur la compréhension des mécanismes de transport de charges impliqués dans l’électronique organique ainsi que sur l’ingénierie des propriétés semiconductrices d’interfaces supramoléculaires hybrides. Tout d’abord, l’origine intrinsèque des propriétés de transport de charges a été étudiée dans de petites molécules semiconductrices, similaires en structure chimiques, mais présentant des propriétés électriques nettement différentes. Puis, les propriétés électroniques de matériaux 2D ont été modulées à l’aide de monocouches auto-assemblées induisant des propriétés de dopage antagonistes. Enfin, des pérovskites hybrides ainsi que des petites molécules semiconductrices ont été utilisées comme matériaux actifs dans la détection d’oxygène et d’humidité, respectivement, formant alors des détecteurs à haute performance. L’ensemble de ces projets utilise les principes de la chimie supramoléculaire dans leur réalisation. / The work realized during this thesis was oriented toward the comprehension of the charge transport mechanism involved in organic electronics, and on the engineering of the semiconducting properties of hybrid supramolecular interfaces. Firstly, the intrinsic origin of the charge transport properties was studied for two semiconducting small molecules which are similar in terms of chemical structure but exhibit different electrical properties. Secondly, the electronic properties of 2D material were modulated with the help of self-assembled monolayers inducing antagonist doping properties. Finally, hybrid perovskites and semiconducting small molecules were used as active materials in oxygen and humidity sensing respectively, forming high-performance sensors. All the project employed the principles of the supramolecular chemistry in their realisation.

The 2-dimensional semiconductor family of materials called transition metal dichalcogenides (2d-TMDs) offers many technological advantages: low power consumption, atomically-precise interfaces, lack of nuclear spins and ease of functional integration with other 2d materials are just a few. In this work we harness the potential of these materials as a platform for quantum devices: develop a method by which we can deterministically create single-photon emitting sites in 2d-TMDs, in large-scale arrays. These we call quantum dots (QDs): quantum confinement potentials within semiconductor materials which can trap single-excitons. The single excitons recombine radiatively to emit single-photons. Single-photon sources are a crucial requirement for many quantum information technology (QIT) applications such as quantum cryptography and quantum communication. The QDs are formed by placing the flakes over substrates nano-patterned with protru- sions which induce local strain and provoke the quantum confinement of excitons at low temperatures. This method has been successfully tested in several TMD materials, hence achieving quantum light at different wavelengths. We present one of the very few systems where quantum confinement sites have been shown to be deterministically engineered in a scalable way. Moreover, we have demonstrated how the 2d-based QDs can be embedded within 2d- heterostructures to form functional quantum devices: we have used TMD monolayers along with other 2d-materials - graphene and hexagonal boron nitride - to create quan- tum light-emitting diodes that produce electrically-driven single-photons. Again, very few single-photon sources can be triggered electrically, and this provides a great ad- vantage when considering on-chip quantum technologies. Finally, we present experimental steps towards using our architecture as quantum bits: capturing single-spins inside the QDs, using field-effect type 2d-heterostructures. We are able to controllably charge the QDs with single-electrons and single-holes – a key breakthrough towards the use of spin and valley pseudospin of confined carriers in 2d-materials as a new kind of optically addressable matter qubit. This work presents the successful marriage of 2d-semiconductor technology with QIT, paving the way for 2-dimensional materials as platforms for scalable, on-chip quantum photonics.

The main goal of this thesis is to deposit metal particles on the surface of 2D nanoplatelets using a controlled cementation process. As a proof of concept, copper (Cu) and Graphene Nanoplatelets (GNP) were chosen as the representative metal and 2D nanoplatelets, respectively. Specific goals of this study include depositing nanometer scale Cu particles on the surface of GNP at a low concentration (approximately 5 vol.%) while maintaining clustering and impurities at a minimum. Parametric studies were done to attain these goals by investigating various metallic reducer types and morphologies, GNP surface activation process, acid volume % and copper (II) sulfate concentrations. Optimal conditions were obtained with Mg ribbon as a reducer, 3 minutes of activation, 1 vol.% of acetic acid and 0.01 M CuSO4. The GNP-Cu powder synthesized in this work is a precursor material to be consolidated via spark plasma sintering (SPS) to make a nacre-like, layered structure for future studies.

<p>Controlling the surface chemistry of 2D materials is critical for the development of next generation applications including nanoelectronics and organic photovoltaics (OPVs). Further, next generation nanoelectronics devices require very specific 2D patterns of conductors and insulators with prescribed connectivity and repeating patterns less than 10 nm. However, both top-down and bottom-up approaches currently used lack the ability to pattern materials with sub 10-nm precision over large scales. Nevertheless, a class of monolayer chemistry offers a way to solve this problem through controlled long-range ordering with superior sub-10 nm patterning resolution. Graphene is most often functionalized noncovalently, which preserves most of its intrinsic properties (<i>i.e.,</i> electronic conductivity) and allows spatial modulation of the surface. Phospholipids such as 1,2-bis(10,12-tricsadiynoyl)-<i>sn­</i>-glycero-3-phosphoethanolamine (diyne PE) form lying down lamellar phases on graphene where both the hydrophilic head and hydrophobic tail are exposed to the interface and resemble a repeating cross section of the cell membrane. Phospholipid is made up of a complex headgroup structure and strong headgroup dipole which allows for a diverse range of chemistry and docking of objects to occur at the nonpolar membrane, these principals are equally as important at the nonpolar interface of 2D materials. A key component in the development of nanoelectronics is the integration of inorganic nanocrystals such as nanowires into materials at the wafer scale. Nanocrystals can be integrated into materials through templated growth on to surface of interest as well as through assembly processes (i.e. interfacial adsorption). </p> <p>In this work, I have demonstrated that gold nanowires (AuNWs) can be templated on striped phospholipid monolayers, which have an orientable headgroup dipoles that can order and straighten flexible 2-nm diameter AuNWs with wire lengths of ~1 µm. While AuNWs in solution experience bundling effects due to depletion attraction interactions, wires adsorb to the surface in a well separated fashion with wire-wire distances (e.g. 14 or 21 nm) matching multiples of the PE template pitch. This suggests repulsive interactions between wires upon interaction with dipole arrays on the surface. Although the reaction and templating of AuNWs is completed in a nonpolar environment (cyclohexane), the ordering of wires varies based on the hydration of the PE template in the presence of excess oleylamine, which forms hemicylindrical micelles around the hydrated headgroups protecting the polar environment. Results suggest that PE template experience membrane-mimetic dipole orientation behaviors, which in turn influences the orientation and ordering of objects in a nonpolar environment.</p> <p>Another promising material for bottom-up device applications is MoS₂substrates due to their useful electronic properties. However, being able to control the surface chemistry of different materials, like MoS₂, is relatively understudied, resulting in very limited examples of MoS₂substrates used in bottom-up approaches for nanoelectronics devices. Diyne PE templates adsorb on to MoS₂­in an edge-on conformation in which the alkyl tails stack on top of each other increasing the overall stability of the monolayer. A decrease in lateral spacing results in high local concentrations of orientable headgroups dipoles along with stacked tails which could affect the interactions and adsorption of inorganic materials (i.e. AuNW) at the interface. </p> <p>Here, I show that both diyne PE/HOPG and diyne PE/MoS₂ substrates can template AuNW of various lengths with long range ordering over areas up to 100 µm². Wires on both substrates experience repulsive interactions upon contact with the headgroup dipole arrays resulting in wire-wire distances greater than the template pitch (7 nm). As the wire length is shortened the measured distance between wires become smaller eventually resulting in tight packed ribbon phases. Wires within these ribbon phases have wire-wire distances equal to the template. Ribbon phases occur on diyne PE/HOPG substrates when the wire length is ~50 nm, whereas wire below ~600 nm produce ribbon phases on diyne PE/MoS_2­substrates. </p> <p>Another important aspect to future scientific development is the catalysis of organic reactions, specifically oxygenation of organic sulfides. Sulfide oxygenation is important for applications such as medicinal chemistry, petroleum desulfurization, and nerve agent detoxification. Both reaction rates and the use of inexpensive oxidants and catalysts are important for practical applications. Hydrogen peroxide and <i>tert</i>-butyl hydroperoxide are ideal oxidants due to being cost efficient and environmentally friendly. Hydrogen peroxide can be activated through transition metal base homogeneous catalysts. Some of the most common catalysts are homo- and hetero-polyoxometalates (POMs) due their chemical robustness. Heptamolybdate [Mo₇O₂₄]^6-is a member of the isopolymolybdate family and its ammonium salt is commercially available and low in cost.²² Heteropolyoxometalates have been widely studied as a catalyst for oxygenation reactions whereas heptamolybdate has been rarely studied in oxygenation reactions. </p> <p> Here I report sulfide oxygenation activity of both heptamolybdate and its peroxo derivate [Mo₇O₂₂(O₂)₂]^6-. Sulfide oxygenation of methyl phenyl sulfide (MPS) by H₂O₂to sulfoxide and sulfone occurs rapidly with 100 % utility of H₂O₂ in the presence of [Mo₇O₂₂(O₂)₂]^6-, suggesting the peroxo adduct is an efficient catalyst. However, heptamolybdate is a faster catalyst compared to [Mo₇O₂₂(O₂)₂]^6- for MPS oxygenation and all other sulfides tested under identical conditions. Pseudo-first order <i>k</i>_cat constants from initial rate kinetics show that [Mo₇O₂₄]^6-catalyzes sulfide oxygenation faster. The significant difference in the <i>k</i>_cat suggests differences in the active catalytic species, which was characterized by both UV-Vis and electrospray ionization mass spectrometry. ESI-MS suggest that the active intermediate of [Mo₇O₂₄]^6-under catalytic reaction conditions for sulfide oxygenation by H₂O₂ is [Mo₂O₁₁]^2-. These results show that heptamolybdate is a highly efficient catalyst for H₂O₂oxygenation of organic sulfides.</p>

Tato práce se zabývá oblastí dvourozměrných materiálů, jejich přípravou a analýzou. Pravděpodobně nejznámějším zástupcem dvourozměrných materiálů je grafen. Tento 2D allotrop uhlíku, někdy nazývaný „otec 2D materiálů“, v sobě spojuje neobyčejnou kombinaci elektrických, tepelných a mechanických vlastností. Grafen získal mnoho pozornosti a byl také připraven mnoha metodami. Jedna z těchto metod však stále vyniká nad ostatními kvalitou produkovaného grafenu. Mechanická exfoliace je ve srovnání s jinými technikami velmi jednoduchá, takto připravený grafen je však nejkvalitnější. Práce je také zaměřena na optimalizaci procesu tvorby heterostruktur složených z vrstev grafenu a hBN. Dle prezentovaného postupu bylo připraveno několik van der Waalsových heterostruktur, které byly analyzovány Ramanovskou spektroskopií, mikroskopií atomových sil a nízkoenergiovou elektronovou mikroskopií. Měření pohyblivosti nosičů náboje bylo provedeno v GFET uspořádání. Získané hodnoty pohyblivosti prokázaly vynikající transportní vlastnosti exfoliovaného grafenu v porovnání s grafenem připraveným jinými metodami. V práci popsaný proces přípravy je tedy vhodný pro výrobu kvalitních heterostruktur.

L'isolement du graphène, une monocouche de graphite composée d'un plan d’atomes de carbone, a démontré qu'il est possible de séparer un seul plan d'épaisseur atomique, que l'on appelle matériau bidimensionnel (2D), à partir des solides de Van de Waals (vdW). Grâce à leur stabilité, différents matériaux 2D peuvent être empilés pour former les hétérostructures de vdW. L'interaction vdW à l'interface étant suffisamment faible, les propriétés spécifiques de chaque matériau demeurent globalement inchangées dans l’empilement. En utilisant une démarche théorique et computationnelle basée sur la théorie de la fonctionnelle de la densité (DFT) et le formalisme de Keldysh-Green, nous avons étudié l'hétérostructure graphène/MoS₂ . Le principal intérêt des propriétés spécifiques du graphène et du MoS₂ pour la conception d'un transistor à effet de champ réside dans la mobilité du graphène, à la base d'un transistor haute performance et dans le gap électronique du MoS₂, à la base de la commutation du dispositif. Tout d'abord, nous avons étudié les effets de la rotation entre les deux couches sur les propriétés électroniques à l'interface, en démontrant que les propriétés électroniques globales ne sont pas affectées par l'orientation. En revanche, les images STM (microscope à effet tunnel) sont différentes pour chaque orientation, en raison d'un changement de densité de charge locale. Dans un deuxième temps, nous avons utilisé l’interface graphène/MoS₂ en tant que modèle très simple de Transistor à Effet de Champ. Nous avons analysé le rôle des hétérostructures de vdW sur la performance du transistor, en ajoutant des couches alternées de graphène et MoS₂ sur l'interface graphène/MoS₂. Il a ainsi été démontré que la forme de la DOS au bord du gap est le paramètre le plus important pour la vitesse de commutation du transistor, alors que si l’on ajoute des couches, il n’y aura pas d’amélioration du comportement du transistor, en raison de l'indépendance des interfaces dans les hétérostructures de vdW. Cependant, cela démontre que, dans le cadre de la DFT, on peut étudier les propriétés de transport des hétérostructures de vdW plus complexes en séparant chaque interface et en réduisant le temps de calcul. Les matériaux 2D sont également étudiés ici en tant que pointe pour STM et AFM (microscope à force atomique) : une pointe de graphène testée sur MoS₂ avec défauts a été comparée aux résultats correspondants pour une pointe en cuivre. La résolution atomique a été obtenue et grâce à l'interaction de vdW entre la pointe et l’échantillon, il est possible d’éviter les effets de contact responsables du transfert d'atomes entre la pointe et l'échantillon. En outre, l'analyse des défauts est très utile du fait de la présence de nouveaux pics dans le gap du MoS₂ : ils peuvent ainsi être utilisés pour récupérer un pic de courant et donner des perspectives pour améliorer la performance des transistors. / The isolation of graphene, a single stable layer of graphite, composed by a plane of carbon atoms, demonstrated the possibility to separate a single layer of atomic thickness, called bidimensional (2D) material, from the van der Waals (vdW) solids. Thanks to their stability, 2D materials can be used to form vdW heterostructures, a vertical stack of different 2D crystals maintained together by the vdW forces. In principle, due to the weakness of the vdW interaction, each layer keeps its own global electronic properties. Using a theoretical and computational approach based on the Density Functional Theory (DFT) and Keldish-Green formalism, we have studied graphene/MoS₂ heterostructure. In this work, we are interested in the specific electronic properties of graphene and MoS₂ for the conception of field effect transistor: the high mobility of graphene as a basis for high performance transistor and the gap of MoS₂ able to switch the device. First, the graphene/MoS₂ interface is electronically characterized by analyzing the effects of different orientations between the layers on the electronic properties. We demonstrated that the global electronic properties as bandstructure and Density of State (DOS) are not affected by the orientation, whereas, by mean of Scanning Tunneling Microscope (STM) images, we found that different orientations leads to different local DOS. In the second part, graphene/MoS₂ is used as a very simple and efficient model for Field Effect Transistor. The role of the vdW heterostructure in the transistor operation is analyzed by stacking additional and alternate graphene and MoS₂ layers on the simple graphene/MoS₂ interface. We demonstrated that the shape of the DOS at the gap band edge is the fundamental parameter in the switch velocity of the transistor, whereas the additional layers do not improve the transistor behavior, because of the independence of the interfaces in the vdW heterostructures. However, this demonstrates the possibility to study, in the framework of DFT, the transport properties of more complex vdW heterostructures, separating the single interfaces and reducing drastically the calculation time. The 2D materials are also studied in the role of a tip for STM and Atomic Force Microscopy (AFM). A graphene-like tip, tested on defected MoS₂, is compared with a standard copper tip, and it is found to provide atomic resolution in STM images. In addition, due to vdW interaction with the sample, this tip avoids the contact effect responsible for the transfer of atoms between the tip and the sample. Furthermore, the analysis of defects can be very useful since they induce new peaks in the gap of MoS₂: hence, they can be used to get a peak of current representing an interesting perspective to improve the transistor operation.