In this study, the tansparent conductive oxide (TCO) multilayer film AZO/Ag-Ti/AZO was fabricated with Ag-Ti alloy as conducting layer and AZO as anti-reflective material. The metal alloy was deposited by DC magnetron sputtering, and the AZO film deposition was performed by spin-coating technique and dried at suitable temperature. The thicknesses of Ag-Ti and AZO thin films were varied to fabricate AZO/Ag-Ti/AZO multilayer films. The microstructures of the multilayer films were observed by SEM and AFM. Sheet resistance was measured by using four-point probe. Optical transmittance was measured in the visible range by uv-vis spectrophotometer. The results show that as the top of AZO thickness is 50 nm, intermediate Ag-Ti metal laminated to 9 nm, and the bottom of the AZO is 35 nm, the transmittance of multilayer film AZO/Ag-Ti/AZO can reach 78.92%, and the sheet resistance is 1.86£[/¡¼. When thermal annealing process was carried out to the bottom AZO film, the worse characteristics of the transmittance and resistance of the performed multilayer film were resulted.

This dissertation focuses on two aspects of integrating near-infrared plasmonics with electronics with the intent of developing the platform for future photonics. The first aspect focuses on fabrication by introducing and developing a simple, single reflective optical element capable of high–throughput, large scale fabrication of micro- and nano-sized structure templates using holographic lithography. This reflective optical element is then utilized to show proof of concept in fabricating three dimensional structures in negative photoresists as well as tuning subwavelength features in two dimensional compound lattices for the fabrication of dimer and trimer antenna templates. The second aspect focuses on the study of aluminum zinc oxide (AZO), which belongs to recently popularized material class of transparent conducting oxides, capable of tunable plasmonic capabilities in the near-IR regime. Holographic lithography is used to pattern an AZO film with a square lattice array that are shown to form standing wave resonances at the interface of the AZO and the substrate. To demonstrate device level integration the final experiment utilizes AZO patterned gratings and measures the variation of diffraction efficiency as a negative bias is applied to change the AZO optical properties. Additionally efforts to understand the behavior of these structures through optical measurements is complemented with finite difference time domain simulations.

京都大学 / 0048 / 新制・課程博士 / 博士(エネルギー科学) / 甲第18698号 / エネ博第310号 / 新制||エネ||63(附属図書館) / 31631 / 京都大学大学院エネルギー科学研究科エネルギー社会・環境科学専攻 / (主査)教授 石原 慶一, 教授 佐川 尚, 准教授 奥村 英之 / 学位規則第4条第1項該当 / Doctor of Energy Science / Kyoto University / DFAM

Starting from small scale laboratories to the highly sophisticated industrial facilities, monitoring and control forms the most integral part. In order to perform this continuous monitoring we require an interface, that would operate between the system and its processing conditions and in turn which facilitates us to act accordingly. This interface is called as a sensor. There are various types of sensors available which have wide range of functionality in various different fields. The use of transparent conducting oxide (TCO) in the field of sensor applications has increased and has been the subject of extensive research. Good electrical properties, good optical properties, wide band gap, portability, easy processing, and low cost has led to the extensive research on TCO for sensor applications. For this research purpose two specific types of sensor applications namely, light sensing and humidity sensing were considered. For this purpose, two sets of metal-oxide-semiconductor field effect transistors (MOSFET) with one set having transparent aluminum doped zinc oxide and the other having indium tin oxide respectively as their gate metal was fabricated. The MOSFETs were fabricated using a four level mask and tested.

With the recent development of in situ transmission electron microscopy (TEM) characterization techniques, the real time study of property-structure correlations in nanomaterials becomes possible. This dissertation reports the direct observations of deformation behavior of Al2O3-ZrO2-MgAl2O4 (AZM) bulk ceramic nanocomposites, strengthening mechanism of twins in YBa2Cu3O7-x (YBCO) thin film, work hardening event in nanocrystalline nickel and deformation of 2wt% Al doped ZnO (AZO) thin film with nanorod structures using the in situ TEM nanoindentation tool. The combined in situ movies with quantitative loading-unloading curves reveal the deformation mechanism of the above nanomaterial systems. At room temperature, in situ dynamic deformation studies show that the AZM nanocomposites undergo the deformation mainly through the grain-boundary sliding and rotation of small grains, i.e., ZrO2 grains, and some of the large grains, i.e., MgAl2O4 grains. We observed both plastic and elastic deformations in different sample regions in these multi-phase ceramic nanocomposites at room temperature. Both ex situ (conventional) and in situ nanoindentation were conducted to reveal the deformation of YBCO films from the directions perpendicular and parallel to the twin interfaces. Hardness measured perpendicular to twin interfaces is ~50% and 40% higher than that measured parallel to twin interfaces, by ex situ and in situ, respectively. By using an in situ nanoindentation tool inside TEM, dynamic work hardening event in nanocrystalline nickel was directly observed. During stain hardening stage, abundant Lomer-Cottrell (L-C) locks formed both within nanograins and against twin boundaries. Two major mechanisms were identified during interactions between L-C locks and twin boundaries. Quantitative nanoindentation experiments recorded during in situ experiments show an increase of yield strength from 1.64 to 2.29 GPa during multiple loading-unloading cycles. In situ TEM nanoindentation has been conducted to explore the size dependent deformation behavior of two different types (type I: ~ 0.51 of width/length ratio and type II: ~ 088 ratio) of AZO nanorods. During the indentation on type I nanord structure, annihilation of defects has been observed which is caused by limitation of the defect activities by relatively small size of the width. On the other hand, type II nanorod shows dislocation activities which enhanced the grain rotation under the external force applied on more isotropic direction through type II nanorod.

ZnO window layers for CIGS solar cells are grown with a DC sputtering technique instead of a conventional RF sputtering technique. Transparent window layers and buffer layers are sputtered from the Zn target in the presence of Oxygen. The window layer is doped with Aluminum in order to achieve high electrical conductivity and thermal stability. The effect of different sputtering parameters on the electrical and optical properties of the films is elaborately studied. Sets of annealing experiments are also performed. Combinations of different deposition parameters are examined to design the optimum fabrication conditions. We are able to deposit 85% transparent, Al doped ZnO films having 002-axis orientation and 4e-4 ohm-cm resistivity, which is successfully, used on CIGS solar cells. Resistivity of undoped ZnO buffer layers is varied form 10-2 ohm-cm to unmeasurable by varying the sputtering parameters. The performance of a reactively sputtered window layer and a buffer layer have matched the performance of the RF sputtered ZnO on CIGS solar cells. There has been considerable effort to eliminate Chemical Bath Deposition of the CdS buffer layer from CIS solar cell fabrication. The performance of an undoped DC sputtered ZnO layer is examined on Cd free CIGS solar cells. The ZnO buffer layer is directly sputtered on an underlying CIGS material. The performance of Cd free solar cells is highly susceptible to the presence of Oxygen in the sputtering ambient of the buffer layer deposition [6]. As Oxygen is a growth component in reactive sputtering, the growth mechanisms of the DC-sputtered buffer layer are studied to improve the understanding. The performance of all reactively sputtered ZnO devices matched the values reported in the literature and the results for DC sputtered ZnO on Cd-free solar cells were encouraging.

Le travail de thèse implique l'étude de matériaux conducteurs transparents sans indium (TCM), composants essentiels de nombreux dispositifs optoélectroniques, utilisant le dépôt spatial de couches atomiques sous pression atmosphérique (AP-SALD). Cette nouvelle technique partage les avantages principaux de l'ALD classique, mais en plus permet le dépôt de couches minces de haute qualité sur de grandes surfaces avec un contrôle précis à l’échelle nanométrique. Ce travail est focalisé sur l'optimisation des propriétés électriques des films d'oxyde de zinc dopé à l'aluminium (ZnO: Al), l'un des oxydes conducteurs les plus étudiés (TCOs). L'influence de plusieurs paramètres expérimentaux sur les propriétés physiques des films a été étudié. Le mécanisme de transport des porteurs de charge au niveau des joints de grains a été identifié comme étant l'émission tunnel plutôt que l’émission thermoïonique dans le ZnO fortement dopé, grâce à un nouveau modèle que nous avons développé en utilisant la méthode de la matrice de transfert à fonction Airy (AFTMM). En résumé, la densité du piège à électrons aux joints de grains pour les échantillons de ZnO:Al (2,2 × 10^20 cm-3) préparés par AP-SALD a été estimée à environ 7,6 ×10^13 cm-2. Notre modèle montre que la diffusion par les joints de grains est le mécanisme de diffusion dominant dans nos films fabriqués par AP-SALD. Nous avons trouvé que le recuit assisté par UV (~ 200 ° C) sous vide était une méthode efficace pour réduire les pièges aux joints de grains, entraînant une amélioration de la mobilité de 1 cm2V-1s-1 à 24 cm2V-1s-1 pour ZnO et à 6 cm2V -1s-1 pour ZnO:Al. Nous avons également utilisé AP-SALD pour fabriquer des TCM performants, stables et flexibles basés sur un réseau de nanofils métalliques. Pour cela, nous avons développé des électrodes composites en revêtant des nanofils argent ou cuivre (AgNWs ou CuNWs) avec ZnO, Al2O3, ou ZnO: Al. Un revêtement très conforme d’une épaisseur de quelques dizaines de nanomètres déposé par la technique AP-SALD améliore considérablement les stabilités thermique et électrique du réseau AgNWs ou CuNWs. Les propriétés optoélectroniques élevées (résistance de surface 10 ohms/carré, transmittance ~ 90%) du composite AgNW / ZnO: Al les rendent très appropriés pour une application en tant que TCM, en particulier pour les dispositifs flexibles.Enfin, en tant que technique de dépôt versatile, AP-SALD est bien compatible avec la technologie des cellules solaires à hétérojonction de silicium (Si-HET) en termes de passivation d'interface. L'intégration de TCM ZnO: Al et AgNWs à la cellule Si-HET a également été explorée. / The thesis work involves the study of Indium-free Transparent Conductive Materials (TCMs), key components of many optoelectronic devices, using Atmospheric Pressure Spatial Atomic Layer Deposition (AP-SALD). This new approach shares the main advantages of conventional ALD but allows open-air, very fast deposition of high-quality nanometer-thick materials over large surfaces. We focused on the optimization of the electrical properties of Aluminum doped Zinc Oxide (ZnO:Al) films, one of the most studied Transparent Conductive Oxides (TCOs). The effect of several experimental parameters on the physical properties of the deposited films has been evaluated. The carrier transport mechanism at grain boundaries was identified to be tunneling rather than thermionic emission in highly doped ZnO, thanks to a new model we have developed using the Airy Function Transfer Matrix Method. Accordingly, the electron trap density at grain boundaries for ZnO:Al samples (2.2×1020 cm-3) prepared by AP-SALD was estimated to be about 7.6×1013 cm-2. Our model shows that grain boundary scattering is the dominant scattering mechanism in our films. We found that UV assisted annealing (~ 200 °C) under vacuum was an efficient method to reduce grain boundary traps, resulting in an improvement of mobility from 1 cm2V-1s-1 to 24 cm2V-1s-1 for ZnO and to 6 cm2V-1s-1 for ZnO:Al. We have also used AP-SALD to fabricate high-performance, stable and flexible TCMs based on metallic nanowire network. For that, we developed composite electrodes by coating silver/copper nanowires (AgNWs/CuNWs) with ZnO, Al2O3, or ZnO:Al. A thin conformal coating deposited by AP-SALD technique enhanced drastically the thermal/electrical stability of the AgNWs/CuNWs network. High optoelectronic properties (resistivity ~ 10-4 Ωcm, transmittance ~ 90 %) of the AgNW/ZnO:Al composite make them very appropriate for application as TCM, especially for flexible devices.Finally, as a soft deposition technique, AP-SALD is completely compatible to the Silicon heterojunction (Si-HET) solar cell technology in terms of interface passivation. The integration of ZnO:Al and AgNWs based TCMs to Si-HET cell has also been explored.