Thesis (M.S.)--Brigham Young University. Dept. of Electrical and Computer Engineering, 2005. / Includes bibliographical references (p. 63-64).

Thesis (Ph. D.)--University of Rhode Island, 2006. / Typescript. Includes bibliographical references (leaves 141-147).

Silicon Germanium BiCMOS technology has been demonstrated as an ideal platform for highly integrated systems requiring both high performance analog and RF circuits as well as large-scale digital functionality. Frequency synthesizers are ideal candidates for this technology because the mixed-signal nature of modern frequency synthesis designs fundamentally requires both digital and analog signal processing. This research targets three areas to improve SiGe frequency synthesizers. A majority of this work focuses on applying SiGe frequency synthesizers to extreme environment applications such as space, where low temperatures and ionizing radiation are significant design issues to contend with. A second focus area involves using SiGe HBTs to minimize noise in frequency synthesizer circuits. Improved low frequency "pink" noise in SiGe HBTs provide a significant advantage over CMOS devices, and frequency synthesis circuits are significantly affected by this type of noise. However, improving thermal "white" noise is also considered. Finally, an analysis of AM-PM distortion is considered for SiGe HBTs. The studies presented focus on identifying the physical mechanisms of observed phenomena, such as single event transients or phase noise characteristics in oscillators. The ultimate goal of this research is to provide a reference of effective design parameters for circuit and system designers seeking to take advantage of the properties of SiGe device physics.

Thesis (M.S.)--State University of New York at Binghamton, Thomas J. Watson School of Engineering and Applied Science, Department of Electrical and Computer Engineering, 2009. / Includes bibliographical references.

University of Macau / Faculty of Science and Technology / Department of Electrical and Electronics Engineering

Thesis (M.S.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

While the development of reconfigurable analog platforms is a blossoming field, the tradeoff between usability and flexibility continues to be a major barrier. Field Programmable Analog Arrays (FPAAs) built with translinear elements offer a promising solution to this problem. These FPAAs can be built to use previously developed synthesis procedures for translinear circuits. Furthermore, large-scale translinear FPAAs can be built using floating-gate transistors as both the computational elements and the reconfigurable interconnect network. Two FPAAs, built using Multiple Input Translinear Elements (MITEs), have been designed, fabricated, and tested. These devices have been programmed to implement various circuits including multipliers, squaring circuits, current splitters, and filters. In addition, synthesis, place-and-route, and programming tools have been created in order to implement a reconfigurable system where the circuits implemented are described only by equations. Supporting circuitry for interfacing with current-mode, translinear FPAAs has also been developed. This circuitry included a voltage-to-current converter, a current-to-voltage converter, and a pipelined analog-to-digital converter. The continued development of translinear FPAAs will lead to a reconfigurable analog system that allows for a large portion of the design to be abstracted away from the user.

Thesis (M.S.) -- Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

Orientador: Carlos Alberto dos Reis Filho / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-05T12:05:57Z (GMT). No. of bitstreams: 1 Cajueiro_JoaoPauloCerquinho_D.pdf: 1564955 bytes, checksum: 6ff645ea51f6ee2dcb9e7ab8db6363aa (MD5) Previous issue date: 2005 / Resumo: Uma nova técnica de compensação de temperatura para implementar tensões de referência em circuitos CMOS é descrita, desde o seu fundamento teórico até a comprovação experimental feita com amostras de circuitos integrados protótipos que a implementam. A ténica proposta se baseia no fato de que a tensão entre gate1, e fonte, VGS, de um transistor MOS pode tanto aumentar como diminuir com o aumento da temperatura, dependendo da corrente com que opera. Com base nisto, é possível empilhar n transistores, que estejam polarizados com uma corrente adequada de tal maneira que a queda de tensão sobre esta pilha de transistores, que tem amplitude nVGS, tenha, ao mesmo tempo, a mesma taxa de variação térmica que a tensão VGS produzida por um único transistor. Em tais condições, a diferença entre estas duas tensões é constante, tornando-se uma referencia de tensão. Uma implementação alternativa à pilha de transistores para produzir a tensão nVGS consiste num único transistor de gate ?utuante no qual a tensão VGS equivalente tem amplitude ajustável em campo. Diversos circuitos que se baseiam nesta técnica foram projetados e alguns deles fabricados em tecnologia CMOS 0,35 µm.O desempenho do melhor circuito fabricado atingiu coe?ciente térmico de 100 ppm/°C na faixa térmica de -40 a 120 °C. Outras configurações foram simuladas mostrando que é possível atingir coeficientes térmicos menores que 10 ppm/°C. O estado da arte é representado por referências de tensão que têm coeficientes térmicos de 1 ppm/°C na mesma faixa térmica em que se caracterizam os circuitos desenvolvidos. Tais referências de tensão se baseiam principalmente nos circuitos chamados de bandgap. Há também, um produto recente da empresa Intersil que utiliza um transistor que opera como memória análoga fornecendo uma tensão referência memorizada com altíssima estabilidade térmica. O princípio em que este produto se baseia, entretanto, é diferente do que está sendo proposto neste trabalho apesar do uso comum de um transistor de gate ?utuante. A contribuição deste trabalho não está no desempenho que as fontes de referência que se baseiam no princípio atingiram. Sua contribuição reside na forma como pode ser implementada, utilizando somente transistores MOS e no fato de que tem amplitude ajustável em campo. 1A palavra gate está sendo usada em toda extensão do texto, em lugar da palavra ¿porta¿, para identi?car o terminal de alta resistência de um transistor MOS / Abstract: A new technique of temperature compensation to implement a voltage reference in CMOS circuits is described, from theoretical basis to experimental evidence made with samples of integrated circuits prototypes that implement it. The proposed technique is based on the fact that the voltage between gate and source, VGS, of a MOS transistor can either increase as diminish with the increase of temperature, depending on the current with that it operates. Based in this, it is possible to pile up n transistors, that are polarized with an adequate current in such way that the voltage on this stack of transistors, that has amplitude nVGS, has, at the same time, the same thermal variation than the VGS voltage produced in only one transistor. In such conditions, the difference between these two voltages is constant, becoming a voltage reference. An alternative implementation to the stack of transistors to produce the nVGS volage consists of a ?oating gate transistor in which equivalent VGS has adjustable amplitude in ?eld. Diverse circuits that are based on this technique had been projected and some of them manufactured in technology CMOS 0,35 µm. The performance of the best manufactured circuit reached 100 ppm/°C of thermal coefficient in the thermal band of -40 to 120 °C. Other con?gurations had been simulated showing that it is possible to reach thermal coe?cients lesser that 10 ppm/°C. The state of the art is represented by voltage references that have thermal coefficients of 1 ppm/°C in the same thermal band where the developed circuits had been characterized. Such voltage references are mainly based on the circuits called bandgap. There is, also, a recent product of the Intersil company who uses a transistor that operates as analogical memory supplying a voltage reference memorized with highest thermal stability. The base principle of this product is, however, different of that being considered in this work despite the use of a ?oating gate transistor. The contribution of this work is not in the performance that the reference sources that are based on the principle had reached. Its contribution inhabits in the form as it can be implemented, only using MOS transistors and in the fact that it has adjustable amplitude in ?eld / Doutorado / Eletrônica, Microeletrônica e Optoeletrônica / Doutor em Engenharia Elétrica

University of Macau / Faculty of Science and Technology / Department of Electrical and Electronics Engineering