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Understanding material behavior under extreme conditions is an important area of research in physics and material science. One method to study the behavior of materials under these conditions is to drive a strong shock wave through a material and watch its response. In many cases the material response is complicated by phase transitions such as lattice restructuring (Barker 1975; Mabire and Hereil 2000; Swift, Tierney et al. 2005) and melting (Asay 1975; Elias, Chapron et al. 1988; Werdiger, Eliezer et al. 1999; Mabire and Hereil 2000; Swift, Tierney et al. 2005). To study these dynamics we are using lasers in high time resolution pump-probe experiments to develop a real time diagnostic on the phase of a shocked material. This technique enables probing of the entire phase history of a material as it shock compresses and releases. In addition to linear reflectivity and ultra-fast 2D displacement interferometry, we developed a melting diagnostics based on the non-linear optical technique of third harmonic generation (THG) using a circularly polarized laser pulse. This diagnostic resolves the less than 300 fs melting transition of laser excited Si and GaAs, and it also detects a response in shock compressed silicon. Our results show that Si remains crystalline during compression of an elastic 100 kbar shock wave. Results from Si shocked to higher pressures (> 300 kbar) indicate a decrease in THG, suggesting some level of disordering or unexplained phase change. / text

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Bibliography: leaves 200-207. / xi, 207 leaves : ill. ; 20 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / The aim of this thesis is to design and implement the hardware mapping of critical paths of a GaAs Core Processor for a Solid Modelling Accelerator. The solid modelling accelerator is designed using GaAs/CMOS/B:CMOS unified technology. High speed GaAs technology is used in the core processor to deal with floating point intensive calculations, while CMOS technology is used where high speed outputs are not required. / Thesis (Ph.D.)--University of Adelaide, Dept. of Electrical and Electronic Engineering, 1996

Bibliography: p. 269-276. / xxx, 306 p. : ill. ; 30 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / The main objective of this thesis is to create a significant advance in the area of solid-state imaging via the research of an image sensor that can be ultimately integrated with high-speed gallium arsenide (GaAs) processing circuitry on a common substrate chip. / Thesis (Ph.D.)--University of Adelaide, Dept. of Electrical and Electronic Engineering, 1997

Bibliography: leaves 156-165. / xvi, 174 leaves : ill. ; 30 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical. / Thesis (M.Eng.Sc.)--University of Adelaide, Dept. of Electrical & Electronic Engineering, 1996?

Thesis (Ph. D.)--West Virginia University, 2007. / Title from document title page. Document formatted into pages; contains xv, 145 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 138-145).

Thesis (Ph.D.) -- McMaster University, 1997. / Includes bibliographical references. Also available via World Wide Web.

Thesis (Ph.D.) -- McMaster University, 1997. / Includes bibliographical references (leaves [100]-105. Also available via World Wide Web.