It is known that boron containing compounds exhibit interesting chemical and physical properties. In the past 50 years modern preparative methods have led to an overwhelming number of different structures of novel and often unexpected boron–sulfur and boron–selenium compounds. Among all these new compounds, there was only one which comprises rare earth metal (RE), boron and heavier chalcogen, namely sulfur, the europium thioborate Eu[B2S4] [1]. Selenoborates of rare earth metals are hitherto unknown. On the other hand, rare earth oxoborates represent a well-known class of compounds [2] with a wide range of applications, especially in the field of optical materials. In addition, well-defined boron compounds containing the heavier group 16 elements are fairly difficult to prepare due to the high reactivity of in situ formed boron chalcogenides towards most container materials at elevated temperatures. The chalcogenoborates of the heavier chalcogens are sensitive against oxidation and hydrolysis and therefore have to be handled in an inert environment. Therefore, developing and optimization of preparative routes for the syntheses of pure and crystalline RE thio- and selenoborates was needed. In the course of this study, the application of different preparation routes, such as optimized high-temperature routes (HT), metathesis reactions and high-pressure high-temperature routes (Hp – HT), led to sixteen new rare earth thioborates. Their crystal structures were solved and/or refined from powder and single crystal X-ray diffraction data, while the local structure around rare earth metal was confirmed from the results of the EXAFS analyses. Quantum mechanical calculations were used within this work in order to investigate the arrangement of intrinsic vacancies on the boron sites in the crystal structures of rare earth thioborates. Thermal, magnetic and optical properties of these compounds are also discussed. The rare earth thioborates discovered during this work are the first examples of ternary thioborates containing trivalent cations. These compounds can be divided into two groups of isotypic compounds: the rare earth orthothioborates with general formula REIII[BS3] (RE = La – Nd, Sm, Gd and Tb) [3] and the rare earth thioborate sulfides with general formula REIII¦9B5S21, (RE = Gd – Lu, and Y) [4]. In the crystal structure of RE[BS3] (orthorhombic, space group Pna21, Z = 4), the sulfur atoms form the vertices of corrugated kagome nets, within which every second triangle is occupied by boron and the large hexagons are centered by RE cations. The structural features of the isotypic RE[BS3] phases show great similarities to those of rare earth oxoborates RE[BO3] and orthothioborates of alkali and alkaline earth metals as well as to thallium orthothioborate, yet pronounced differences are also observed: the [BS3]3– groups in the crystal structures of RE[BS3] are more distorted, where the distortion decreases with the decreasing size of the RE element, and the coordination environments of the [BS3]3– groups in the crystal structures of RE[BS3] are different in comparison with the coordination environments of the [BO3]3– groups in the crystal structures of λ-Nd[BO3] [5] and of o-Ce[BO3] [6]. The results of the IR and Raman investigations are in agreement with the presence of [BS3]3– anions in the crystal structure of RE[BS3]. Thermal analyses revealed the thermal stability of these compounds under inert conditions up to ~ 1200 K. Analyses of the magnetic properties of the Sm, Gd and Tb thioborates showed that both Gd and Tb phases order antiferromagnetically. The magnetic susceptibility for Sm orthothioborate approximately follows the Van-Vleck theory for Sm3+. Between 50 K and 62 K a transition appears which is independent of the magnetic field: the magnetic susceptibility becomes lower. This effect might indicate a discontinuous valence transition of Sm which was further investigated by means of XANES and X-ray diffraction using synchrotron radiation, both at low temperatures. The series of isotypic RE thioborate sulfides with composition RE9B5S21, was obtained by the application of Hp – HT conditions to starting mixtures with the initial chemical composition “REB3S6“, after careful optimization of the pressure, temperature and treatment time, as well as the composition of the starting mixtures. Their crystal structures adopt the Ce6Al3.33S14 [7] structure type (hexagonal, space group P63, Z = 2/3). The special features of the RE9B5S21 crystal structures, concerning boron site occupancies and different coordination environments of the two crystallographically independent boron sites, were investigated in more detail by means of quantum chemical calculations, electron diffraction methods, optical and X-ray absorption spectroscopy as well as by 11B NMR spectroscopy. The results obtained from these different experimental and computational methods are in good mutual agreement. The crystal structures of the RE9B5S21 compounds are characterized by two types of anions: tetrahedral [BS4]5– and trigonal planar [BS3]3– as well as [(S2–)3] units. Isolated [BS4]5– tetrahedra (all pointing with one of their apices along the polar [001] direction) represent a unique feature of the crystal structure which is observed for the first time in a thioborate compound. These tetrahedra are stacked along the three-fold rotation axes. Vacancies are located at the trigonal-planar coordinated boron site with preferred ordering –B–B––B–B–– along [001]. No superstructure is observed by means of electron diffraction methods as adjacent columns are shuffled along the c axis, giving rise to a randomly distributed vacancy pattern. Positions of the sulfur atoms within the [(S2–)3] substructure as well as planarity of the [BS3]3– units were investigated in more detail by means of quantum mechanical calculations. Results of the IR and Raman spectroscopy, as well as of the 11B NMR spectroscopy are in agreement with the presence of the boron atoms in two different coordination environments. Thermal analyses showed that compounds RE9B5S21 are stable under inert conditions up to ~ 1200 K. In accordance with the combined results of experimental and computational investigations, the chemical formula of the RE9B5S21 compounds is consistent with RE3[BS3]2[BS4]3S3. A short overview of investigations towards rare earth selenoborates, where in most of the cases only known binary rare earth selenides could be identified, is presented as well in this work. Investigations in the RE–B–Se systems were conducted by the application of different preparation routes by varying the experimental parameters and the initial compositions of the starting mixtures. Although no crystal structure of a ternary phase in these systems could be solved, there are indications that such phases exist, but further investigations are needed. [1] M. Döch, A. Hammerschmidt, B. Krebs, Z. Anorg. Allg. Chem., 2004, 630, 519. [2] H. Huppertz, Chem. Commun., 2011, 47, 131; and references therein. [3] J. Hunger, M. Borna, R. Kniep, J. Solid State Chem., 2010, 182, 702; J. Hunger, M. Borna, R. Kniep, Z. Kristallogr. NCS, 2010, 225, 217; M. Borna, J. Hunger, R. Kniep, Z. Kristallogr. NCS, 2010, 225, 223; M. Borna, J. Hunger, R. Kniep, Z. Kristallogr. NCS, 2010, 225, 225. [4] M. Borna, J. Hunger, A. Ormeci, D. Zahn, U. Burkhardt, W. Carrillo-Cabrera, R. Cardoso-Gil, R. Kniep, J. Solid State Chem., 2011, 184, 296; [5] H. Müller-Bunz, T. Nikelski, Th. Schleid, Z. Naturforsch. B, 2003, 58, 375. [6] H. U. Bambauer, J. Weidelt, J.-St. Ysker, Z. Kristallogr., 1969, 130, 207. [7] D. de Saint-Giniez, P. Laruelle, J. Flahaut, C. R. Séances, Acad. Sci. Ser. C, 1968, 267, 1029.

Im Hinblick auf das immense Potential von Diamant als Material für die Mikroelektronik wurden im Rahmen dieser Arbeit undotierte und dotierte Diamantfilme mittels chemischer Gasphasenabscheidung auf Silizium präpariert und anschließend auf ihre elektronischen Eigenschaften hin untersucht. Für Letzteres wurde hauptsächlich die Elektronen-Energieverlustspektroskopie in Transmission verwendet. In situ Gasphasendotierung oder Ionenimplantation wurde zur Dotierung der Filme mit Bor, Lithium oder Phosphor eingesetzt. Bei der Ionenimplantation wurde aufgrund der Erzeugung von Strahlenschäden generell eine Erhöhung des sp2-Anteils beobachtet: Letzterer konnte jedoch im Falle der Bordotierung durch eine, den Implantationsprozeß folgende, Hochtemperaturtemperung wieder deutlich vermindert werden. Für die in situ Dotierung mit Bor wurde eine Verringerung des sp2-Gehaltes mit steigender Dotierkonzentration gefunden. Für den Film mit der höchsten Borkonzentration konnte auch die B1s Absorptionskante untersucht werden. Sie gibt Hinweise auf den überwiegenden Einbau der Boratome in einer tetragonalen Orientierung. Das hiermit verbundene Vorhandensein von Akzeptoren führt zu elektronischen Anregungen im Energiebereich der Bandlücke, welche mittels Infrarotspektroskopie und EELS nachgewiesen werden konnten. Aus den EELS Messungen lassen sich Akzeptorkonzentrationen berechnen, welche wiederum den hohen Anteil an tetraedrisch eingebauten Boratomen bestätigen. Desweiteren untersucht wurden, als interessante Materialklasse mit weitreichendem technologischem Potential, undotierte und stickstoffdotierte, diamantartige amorphe Kohlenstoffilme und hierbei insbesondere die Abhängigkeit der elektronischen und optischen Eigenschaften von der Ionenenergie und dem Stickstoffpartialdruck während der Filmpräparation. Die Plasmonenergien, Massendichten, sp3-Anteile und die optischen Bandlücken der Filme wurden quantitativ bestimmt, wobei das jeweilige Maximum bei einer Ionenenergie von 100 eV gefunden wurde. Alle eben genannten Größen verringern sich kontinuierlich mit zunehmendem Stickstoffanteil. Eine Kramers-Kronig Analyse der Verlustspektren gibt Zugriff auf den Real- und Imaginärteil der dielektrischen Funktion und damit auf das Spektrum der Einteilchenanregungen. Die Hybridisierung der Kohlenstoff- und der Stickstoffatome wurde detailliert aus den jeweiligen 1s Absorptionskanten bestimmt. Weiterhin wurde Diamant als Modellsystem eines Festkörpers mit rein kovalenten Bindungen untersucht, insbesondere die Verlustfunktion von Diamant entlang mehrerer Hochsymmetriekristallrichtungen über einen großen Energie- und Impulsbereich. Aus den EELS Messungen erschließt sich unmittelbar die stark anisotrope Plasmonendispersion von Diamant. Aus dem Vergleich der experimentellen Spektren mit ab initio LDA Rechnungen, die sowohl Kristallokalfeldeffekte als auch Austausch- und Korrelationseffekte beinhalten, lassen sich direkt Rückschlüsse auf den Einfluß der verschiedenen Effekte ziehen. Schon im optischen Limit, aber umso mehr mit steigendem Impulsübertrag q, wird eine Überlagerung der kollektiven Plasmonanregung mit Einteilchenanregungen im Energiebereich des Plasmons beobachtet, woraus eine Kopplung zwischen beiden Arten von Anregungen resultiert. Abgesehen vom deutlichen Einfluß der Bandstruktur auf die Plasmonendispersion läßt die überaus inhomogene Elektronenverteilung von Diamant auf nicht zuvernachlässigende Kristallokalfeldeffekte schließen. Der Vergleich zwischen experimentellen und berechneten Spektren zeigt deutlich, wie die Kristallokalfeldeffekte in der Tat mit steigendem Impulsübertrag an Gewicht zunehmen und die Struktur der Verlustfunktion mitbestimmen. / In the context of the immense potential of diamond as a material for use in the microelectronics industry, in this thesis pristine and doped diamond films have been deposited on silicon using chemical vapour deposition. Subsequently their electronic properties have been investigated using mainly electron energy-loss spectroscopy. Doping of the films with boron, lithium or phosphorous was carried out either via in-situ gas phase doping during film growth or using ion implantation. Upon ion implantation an increase of the carbon content with sp2 hybridisation has generally been found due to ion beam induced damage. In the case of boron doping it was possible to significantly reduce this sp2-contribution using a high temperature anneal. For the in-situ doping with boron, upon increasing doping concentration a decrease of the sp2-contribution was found. For the sample with the highest boron content the boron 1s absorption edge could also be investigated, providing evidence for the preferential incorporation of the boron atoms into tetrahedrally co-ordinated sites. This boron incorporation leads to the existence of electronic excitations in the energy range of the band gap, which could be observed using both infrared and electron energy-loss spectroscopy. From the electron energy-loss measurements it was possible to calculate acceptor concentrations which were consistent with the large amount of tetrahedrally co-ordinated boron atoms. A second theme in this thesis involved the study of pristine and nitrogen doped diamond-like amorphous carbon films, which are an interesting material class with far-reaching technological potential. Here the focus of the research concerned the dependency of the electronic and optical properties of the films upon the ion energy and the nitrogen partial pressure applied during the film preparation. The plasmon energies, mass densities, sp3 contribution and the optical band gaps of the samples were determined quantitatively, whereby the maximum in all these quantities was found to occur for ion energies of 100 eV. Furthermore, all of these characteristics were found to decrease continually with increasing nitrogen content. A Kramers-Kronig analysis of the loss spectra enabled the derivation of the real and imaginary parts of the dielectric function and with this of the complete spectrum of single particle excitations. The hybridization between the carbon and nitrogen atoms was also studied in detail from the analysis of the respective 1s absorption edges. Furthermore this thesis deals with the investigation of diamond as a model system for solids with pure covalent bonds. In particular, the loss function of diamond was measured along different high symmetry directions over a wide range of energy and momentum. Firstly, the EELS measurements showed directly the strongly anisotropic nature of the plasmon dispersion in diamond. Secondly, by the comparison of the experimental spectra with ab initio LDA-based calculations that include crystal local field effects as well as exchange and correlation contributions, conclusions can be drawn as to the influence of these quantities. In the optical limit, but even more so with increasing momentum transfer q, a superposition of the collective plasmon excitation and the single particle excitations in the energy range of the plasmon is observed. This energetic proximity results in a coupling between both types of excitations. Apart from the distinct influence of the bandstructure on the plasmon dispersion, the considerably inhomogeneous electron distribution of diamond would lead one to expect significant crystal local field effects in this system. The comparison between the experimental and the calculated spectra shows explicitly that the crystal local field effects increase with increasing momentum transfer and play an important role in defining the structure of the loss function.

The study aimed to investigate the implementation of customer care at the Casualty Department of Edenvale Regional Hospital in Gauteng Province. The research was conducted using a qualitative case study approach, which sought to gain deeper understanding of the impact of customer care in the hospital’s Casualty Department from the employees’ point of view. Data was collected from 16 purposively selected respondents using semi-structured interviews and document analyses were interpreted by the researcher to give voice and meaning to the assessment topic. Data was analysed using the Content Analysis framework and six themes emerged from the data analysis: (1) High expectation levels from the community; (2) Quality of patient care; (3) Lack of resources; (4) Malfunctioning equipment; (5) Compromised safety and security; (5) Strategies to improve customer care; and (6) The effect of policies and guidelines on the quality of services rendered. The study revealed that the surrounding community that is served by the Edenvale Hospital’s Casualty Department had high expectations which the hospital was unable to meet because of the many limitations, especially resource constraints. The issues and difficulties associated with overcrowding in the emergency section were raised by respondents, who reported several challenges experienced in the hospital. These included patients sleeping on floor mattresses and even on stretchers, inadequate beds, shortage of staff, malfunctioning equipment and lack of sufficient infrastructure. These challenges resulted in long waiting periods for patients to be given open beds in the wards, bad attitudes from both patients and employees alike, poor communication among staff and patients and their families, and an unsafe environment for the staff and customers (patients). There is hence a need for the Gauteng Health Department together with the hospital management to review resources allocated to the Edenvale Regional Hospital and to increase awareness among the community about the operations of the level 2 hospitals such as this. / Public Administration / M. P. A.

Im Hinblick auf das immense Potential von Diamant als Material für die Mikroelektronik wurden im Rahmen dieser Arbeit undotierte und dotierte Diamantfilme mittels chemischer Gasphasenabscheidung auf Silizium präpariert und anschließend auf ihre elektronischen Eigenschaften hin untersucht. Für Letzteres wurde hauptsächlich die Elektronen-Energieverlustspektroskopie in Transmission verwendet. In situ Gasphasendotierung oder Ionenimplantation wurde zur Dotierung der Filme mit Bor, Lithium oder Phosphor eingesetzt. Bei der Ionenimplantation wurde aufgrund der Erzeugung von Strahlenschäden generell eine Erhöhung des sp2-Anteils beobachtet: Letzterer konnte jedoch im Falle der Bordotierung durch eine, den Implantationsprozeß folgende, Hochtemperaturtemperung wieder deutlich vermindert werden. Für die in situ Dotierung mit Bor wurde eine Verringerung des sp2-Gehaltes mit steigender Dotierkonzentration gefunden. Für den Film mit der höchsten Borkonzentration konnte auch die B1s Absorptionskante untersucht werden. Sie gibt Hinweise auf den überwiegenden Einbau der Boratome in einer tetragonalen Orientierung. Das hiermit verbundene Vorhandensein von Akzeptoren führt zu elektronischen Anregungen im Energiebereich der Bandlücke, welche mittels Infrarotspektroskopie und EELS nachgewiesen werden konnten. Aus den EELS Messungen lassen sich Akzeptorkonzentrationen berechnen, welche wiederum den hohen Anteil an tetraedrisch eingebauten Boratomen bestätigen. Desweiteren untersucht wurden, als interessante Materialklasse mit weitreichendem technologischem Potential, undotierte und stickstoffdotierte, diamantartige amorphe Kohlenstoffilme und hierbei insbesondere die Abhängigkeit der elektronischen und optischen Eigenschaften von der Ionenenergie und dem Stickstoffpartialdruck während der Filmpräparation. Die Plasmonenergien, Massendichten, sp3-Anteile und die optischen Bandlücken der Filme wurden quantitativ bestimmt, wobei das jeweilige Maximum bei einer Ionenenergie von 100 eV gefunden wurde. Alle eben genannten Größen verringern sich kontinuierlich mit zunehmendem Stickstoffanteil. Eine Kramers-Kronig Analyse der Verlustspektren gibt Zugriff auf den Real- und Imaginärteil der dielektrischen Funktion und damit auf das Spektrum der Einteilchenanregungen. Die Hybridisierung der Kohlenstoff- und der Stickstoffatome wurde detailliert aus den jeweiligen 1s Absorptionskanten bestimmt. Weiterhin wurde Diamant als Modellsystem eines Festkörpers mit rein kovalenten Bindungen untersucht, insbesondere die Verlustfunktion von Diamant entlang mehrerer Hochsymmetriekristallrichtungen über einen großen Energie- und Impulsbereich. Aus den EELS Messungen erschließt sich unmittelbar die stark anisotrope Plasmonendispersion von Diamant. Aus dem Vergleich der experimentellen Spektren mit ab initio LDA Rechnungen, die sowohl Kristallokalfeldeffekte als auch Austausch- und Korrelationseffekte beinhalten, lassen sich direkt Rückschlüsse auf den Einfluß der verschiedenen Effekte ziehen. Schon im optischen Limit, aber umso mehr mit steigendem Impulsübertrag q, wird eine Überlagerung der kollektiven Plasmonanregung mit Einteilchenanregungen im Energiebereich des Plasmons beobachtet, woraus eine Kopplung zwischen beiden Arten von Anregungen resultiert. Abgesehen vom deutlichen Einfluß der Bandstruktur auf die Plasmonendispersion läßt die überaus inhomogene Elektronenverteilung von Diamant auf nicht zuvernachlässigende Kristallokalfeldeffekte schließen. Der Vergleich zwischen experimentellen und berechneten Spektren zeigt deutlich, wie die Kristallokalfeldeffekte in der Tat mit steigendem Impulsübertrag an Gewicht zunehmen und die Struktur der Verlustfunktion mitbestimmen. / In the context of the immense potential of diamond as a material for use in the microelectronics industry, in this thesis pristine and doped diamond films have been deposited on silicon using chemical vapour deposition. Subsequently their electronic properties have been investigated using mainly electron energy-loss spectroscopy. Doping of the films with boron, lithium or phosphorous was carried out either via in-situ gas phase doping during film growth or using ion implantation. Upon ion implantation an increase of the carbon content with sp2 hybridisation has generally been found due to ion beam induced damage. In the case of boron doping it was possible to significantly reduce this sp2-contribution using a high temperature anneal. For the in-situ doping with boron, upon increasing doping concentration a decrease of the sp2-contribution was found. For the sample with the highest boron content the boron 1s absorption edge could also be investigated, providing evidence for the preferential incorporation of the boron atoms into tetrahedrally co-ordinated sites. This boron incorporation leads to the existence of electronic excitations in the energy range of the band gap, which could be observed using both infrared and electron energy-loss spectroscopy. From the electron energy-loss measurements it was possible to calculate acceptor concentrations which were consistent with the large amount of tetrahedrally co-ordinated boron atoms. A second theme in this thesis involved the study of pristine and nitrogen doped diamond-like amorphous carbon films, which are an interesting material class with far-reaching technological potential. Here the focus of the research concerned the dependency of the electronic and optical properties of the films upon the ion energy and the nitrogen partial pressure applied during the film preparation. The plasmon energies, mass densities, sp3 contribution and the optical band gaps of the samples were determined quantitatively, whereby the maximum in all these quantities was found to occur for ion energies of 100 eV. Furthermore, all of these characteristics were found to decrease continually with increasing nitrogen content. A Kramers-Kronig analysis of the loss spectra enabled the derivation of the real and imaginary parts of the dielectric function and with this of the complete spectrum of single particle excitations. The hybridization between the carbon and nitrogen atoms was also studied in detail from the analysis of the respective 1s absorption edges. Furthermore this thesis deals with the investigation of diamond as a model system for solids with pure covalent bonds. In particular, the loss function of diamond was measured along different high symmetry directions over a wide range of energy and momentum. Firstly, the EELS measurements showed directly the strongly anisotropic nature of the plasmon dispersion in diamond. Secondly, by the comparison of the experimental spectra with ab initio LDA-based calculations that include crystal local field effects as well as exchange and correlation contributions, conclusions can be drawn as to the influence of these quantities. In the optical limit, but even more so with increasing momentum transfer q, a superposition of the collective plasmon excitation and the single particle excitations in the energy range of the plasmon is observed. This energetic proximity results in a coupling between both types of excitations. Apart from the distinct influence of the bandstructure on the plasmon dispersion, the considerably inhomogeneous electron distribution of diamond would lead one to expect significant crystal local field effects in this system. The comparison between the experimental and the calculated spectra shows explicitly that the crystal local field effects increase with increasing momentum transfer and play an important role in defining the structure of the loss function.

It is known that boron containing compounds exhibit interesting chemical and physical properties. In the past 50 years modern preparative methods have led to an overwhelming number of different structures of novel and often unexpected boron–sulfur and boron–selenium compounds. Among all these new compounds, there was only one which comprises rare earth metal (RE), boron and heavier chalcogen, namely sulfur, the europium thioborate Eu[B2S4] [1]. Selenoborates of rare earth metals are hitherto unknown. On the other hand, rare earth oxoborates represent a well-known class of compounds [2] with a wide range of applications, especially in the field of optical materials. In addition, well-defined boron compounds containing the heavier group 16 elements are fairly difficult to prepare due to the high reactivity of in situ formed boron chalcogenides towards most container materials at elevated temperatures. The chalcogenoborates of the heavier chalcogens are sensitive against oxidation and hydrolysis and therefore have to be handled in an inert environment. Therefore, developing and optimization of preparative routes for the syntheses of pure and crystalline RE thio- and selenoborates was needed. In the course of this study, the application of different preparation routes, such as optimized high-temperature routes (HT), metathesis reactions and high-pressure high-temperature routes (Hp – HT), led to sixteen new rare earth thioborates. Their crystal structures were solved and/or refined from powder and single crystal X-ray diffraction data, while the local structure around rare earth metal was confirmed from the results of the EXAFS analyses. Quantum mechanical calculations were used within this work in order to investigate the arrangement of intrinsic vacancies on the boron sites in the crystal structures of rare earth thioborates. Thermal, magnetic and optical properties of these compounds are also discussed. The rare earth thioborates discovered during this work are the first examples of ternary thioborates containing trivalent cations. These compounds can be divided into two groups of isotypic compounds: the rare earth orthothioborates with general formula REIII[BS3] (RE = La – Nd, Sm, Gd and Tb) [3] and the rare earth thioborate sulfides with general formula REIII¦9B5S21, (RE = Gd – Lu, and Y) [4]. In the crystal structure of RE[BS3] (orthorhombic, space group Pna21, Z = 4), the sulfur atoms form the vertices of corrugated kagome nets, within which every second triangle is occupied by boron and the large hexagons are centered by RE cations. The structural features of the isotypic RE[BS3] phases show great similarities to those of rare earth oxoborates RE[BO3] and orthothioborates of alkali and alkaline earth metals as well as to thallium orthothioborate, yet pronounced differences are also observed: the [BS3]3– groups in the crystal structures of RE[BS3] are more distorted, where the distortion decreases with the decreasing size of the RE element, and the coordination environments of the [BS3]3– groups in the crystal structures of RE[BS3] are different in comparison with the coordination environments of the [BO3]3– groups in the crystal structures of λ-Nd[BO3] [5] and of o-Ce[BO3] [6]. The results of the IR and Raman investigations are in agreement with the presence of [BS3]3– anions in the crystal structure of RE[BS3]. Thermal analyses revealed the thermal stability of these compounds under inert conditions up to ~ 1200 K. Analyses of the magnetic properties of the Sm, Gd and Tb thioborates showed that both Gd and Tb phases order antiferromagnetically. The magnetic susceptibility for Sm orthothioborate approximately follows the Van-Vleck theory for Sm3+. Between 50 K and 62 K a transition appears which is independent of the magnetic field: the magnetic susceptibility becomes lower. This effect might indicate a discontinuous valence transition of Sm which was further investigated by means of XANES and X-ray diffraction using synchrotron radiation, both at low temperatures. The series of isotypic RE thioborate sulfides with composition RE9B5S21, was obtained by the application of Hp – HT conditions to starting mixtures with the initial chemical composition “REB3S6“, after careful optimization of the pressure, temperature and treatment time, as well as the composition of the starting mixtures. Their crystal structures adopt the Ce6Al3.33S14 [7] structure type (hexagonal, space group P63, Z = 2/3). The special features of the RE9B5S21 crystal structures, concerning boron site occupancies and different coordination environments of the two crystallographically independent boron sites, were investigated in more detail by means of quantum chemical calculations, electron diffraction methods, optical and X-ray absorption spectroscopy as well as by 11B NMR spectroscopy. The results obtained from these different experimental and computational methods are in good mutual agreement. The crystal structures of the RE9B5S21 compounds are characterized by two types of anions: tetrahedral [BS4]5– and trigonal planar [BS3]3– as well as [(S2–)3] units. Isolated [BS4]5– tetrahedra (all pointing with one of their apices along the polar [001] direction) represent a unique feature of the crystal structure which is observed for the first time in a thioborate compound. These tetrahedra are stacked along the three-fold rotation axes. Vacancies are located at the trigonal-planar coordinated boron site with preferred ordering –B–B––B–B–– along [001]. No superstructure is observed by means of electron diffraction methods as adjacent columns are shuffled along the c axis, giving rise to a randomly distributed vacancy pattern. Positions of the sulfur atoms within the [(S2–)3] substructure as well as planarity of the [BS3]3– units were investigated in more detail by means of quantum mechanical calculations. Results of the IR and Raman spectroscopy, as well as of the 11B NMR spectroscopy are in agreement with the presence of the boron atoms in two different coordination environments. Thermal analyses showed that compounds RE9B5S21 are stable under inert conditions up to ~ 1200 K. In accordance with the combined results of experimental and computational investigations, the chemical formula of the RE9B5S21 compounds is consistent with RE3[BS3]2[BS4]3S3. A short overview of investigations towards rare earth selenoborates, where in most of the cases only known binary rare earth selenides could be identified, is presented as well in this work. Investigations in the RE–B–Se systems were conducted by the application of different preparation routes by varying the experimental parameters and the initial compositions of the starting mixtures. Although no crystal structure of a ternary phase in these systems could be solved, there are indications that such phases exist, but further investigations are needed. [1] M. Döch, A. Hammerschmidt, B. Krebs, Z. Anorg. Allg. Chem., 2004, 630, 519. [2] H. Huppertz, Chem. Commun., 2011, 47, 131; and references therein. [3] J. Hunger, M. Borna, R. Kniep, J. Solid State Chem., 2010, 182, 702; J. Hunger, M. Borna, R. Kniep, Z. Kristallogr. NCS, 2010, 225, 217; M. Borna, J. Hunger, R. Kniep, Z. Kristallogr. NCS, 2010, 225, 223; M. Borna, J. Hunger, R. Kniep, Z. Kristallogr. NCS, 2010, 225, 225. [4] M. Borna, J. Hunger, A. Ormeci, D. Zahn, U. Burkhardt, W. Carrillo-Cabrera, R. Cardoso-Gil, R. Kniep, J. Solid State Chem., 2011, 184, 296; [5] H. Müller-Bunz, T. Nikelski, Th. Schleid, Z. Naturforsch. B, 2003, 58, 375. [6] H. U. Bambauer, J. Weidelt, J.-St. Ysker, Z. Kristallogr., 1969, 130, 207. [7] D. de Saint-Giniez, P. Laruelle, J. Flahaut, C. R. Séances, Acad. Sci. Ser. C, 1968, 267, 1029.:I INTRODUCTION ......................................................................... 7 1. Motivation and scope of the work .............................................. 9 2. Literature overview .................................................................. 11 2.1. The binary subsystems of the ternary systems RE–B–Q (RE = rare earth metals, Y; Q = S, Se) ......................................................... 12 2.1.1. RE–Q ............................................................................... 12 2.1.2. RE–B ............................................................................... 19 2.1.3. B–Q ................................................................................. 22 2.2. Related ternary compounds ................................................... 25 2.2.1. RE oxoborates .................................................................. 25 2.2.2. Thio- and selenoborates of alkaline, alkaline earth, transition and post transition metals ......................................................................... 33 2.2.3. The RE thioborate Eu[B2S4]................................................ 45 II PREPARATIVE METHODS AND EXPERIMENTAL TECHNIQUES .......... 47 1. Starting materials and their characterization ............................... 49 2. Synthetic approaches and optimizations .................................... 51 2.1. High-temperature routes ...................................................... 52 2.2. Metathesis reactions ............................................................ 53 2.3. Spark Plasma Sintering (SPS) ............................................... 54 2.4. High-Pressure High-Temperature (Hp – HT) Syntheses ........... 55 3. Analytical methods and samples characterization ....................... 55 3.1. Powder X-ray diffraction ...................................................... 55 3.2. Crystal structure investigations using synchrotron radiation .... 57 3.3. Single crystal X-ray diffraction analysis .................................. 57 3.4. Metallographic investigations ................................................ 58 3.5. Electron microscopy ............................................................ 58 3.5.1. Scanning electron microscopy and energy dispersive X-ray spectroscopy ............................................................................ 58 3.5.2. Transmission electron microscopy ...................................... 59 3.6. Optical spectroscopy ........................................................... 59 3.6.1. Infra-Red spectroscopy .................................................... 59 3.6.2. Raman spectroscopy ........................................................ 60 3.7. X-ray absorption spectroscopy ............................................ 60 3.8. Thermal analysis ................................................................. 62 3.9. Magnetic susceptibility measurements ................................... 63 3.10. 11B NMR spectroscopy ..................................................... 63 3.11. Quantum chemical calculations ........................................... 64 3.11.1. Total energy calculations ................................................ 64 3.11.2. Charge transfer analysis ................................................ 64 3.11.3. Chemical bonding........................................................... 64 III RARE EARTH THIOBORATES ................................................. 67 1. Reinvestigation of the only reported rare earth thioborate – EuB2S4 ....69 2. RE[BS3] (RE = La – Nd, Sm, Gd, Tb) .................................... 69 2.1. Syntheses and phase analyses .......................................... 70 2.2. Crystal structure determinations ........................................ 74 2.3. X-ray absorption spectroscopy: EXAFS data analysis for Pr[BS3] ..... 79 2.4. Crystal chemistry .............................................................. 80 2.5. Optical spectroscopy ......................................................... 83 2.6. Thermal analysis ............................................................... 86 2.7. Magnetic susceptibility ....................................................... 88 2.8. X-ray absorption spectroscopy: XANES data analysis for Sm[BS3] .. 91 2.9. Crystal structure investigation at low temperature using synchrotron radiation ................................................................................... 91 2.10. Summary ......................................................................... 95 3. Gd[BS3] : Ce, Eu, Tb ............................................................. 97 3.1. Syntheses and phase analyses ............................................. 97 3.2. Crystal structure determinations ......................................... 101 3.3. Crystal chemistry .............................................................. 103 3.4. Optical spectroscopy ......................................................... 104 3.5. Thermal analysis ............................................................... 106 3.6. Summary ......................................................................... 107 4. RE9B5S21 (RE = Tb – Lu, Y) ................................................ 107 4.1. Syntheses and phase analyses ........................................... 108 4.2. Crystal structure determinations ........................................ 109 4.3. Crystal chemistry .............................................................. 112 4.4. Electronic structure, charge transfer and chemical bonding .... 115 4.5. X-ray absorption spectroscopy: EXAFS data analysis for Lu9B5S21 .............................................................................. 119 4.6. Thermal analysis ............................................................... 121 4.7. 11B NMR investigations ..................................................... 122 4.8. Optical spectroscopy ......................................................... 123 4.9. Summary ......................................................................... 126 IV ON THE WAY TO RARE EARTH SELENOBORATES .................... 127 1. Towards ternary phases in the systems RE–B–Se, with RE = Sm, Tb – Lu.......................................................................................... 129 2. The system La–B–Se ........................................................... 134 3. The system Gd–B–Se .......................................................... 136 4. The system Y–B–Se ............................................................ 137 5. Summary ........................................................................... 139 V SUMMARY AND OUTLOOK ..................................................... 141 VI APPENDIX .......................................................................... 149 VII REFERENCES .................................................................... 163 VIII LIST OF FIGURES ............................................................. 181 IX LIST OF TABLES ................................................................ 193 X CURRICULUM VITAE ........................................................... 199 XI VERSICHERUNG ............................................................... 203

Produced water is the largest waste product by volume in the oil industry and its treatment in onshore or offshore fields poses bigger and different challenges than what water engineers are used to encounter. Process to achieve reuse quality of this water is very expensive with many technical hurdles to overcome making the optimization of the treatment steps necessary. Electrocoagulation (EC) generates coagulants in-situ responsible for destabilizing oil droplets, suspended particles, and common pollutant in produced water. Furthermore, EC is a very efficient technology compared with traditional primary treatments used in the oil & gas industry and has several advantages such as: no hazardous chemical handling (which diminishes the risk of accident and logistic costs), high efficiency potential concerning boron removal, potential small footprint and less sludge generation. In this research, the treatment of produced water using EC was investigated in a practical manner for the oilfield to aim for a cleaner effluent for further processing and help to achieve a reuse quality. For this, an EC cell was designed using different parameters normally used in the literature to fit this scenario. After preliminary tests, the treatment time was set to 3 seconds. Response surface method (RSM) was employed to optimize the operating conditions for TOC removal on a broad quality of synthetic produced water while varying: salinity, initial oil concentration and initial pH. TOC was chosen to be the main response because of its importance in legislation and sensibility on the method. Furthermore, turbidity removal, change of pH value after EC in water with lack of buffer capacity, aluminum concentration and preliminary tests involving boron removal and influence of hydrogen carbonate were also studied. Real produced water was treated with EC to assess the optimum conditions obtained by the RSM showing the results were closely related. Finally, an estimation of volume required and operating cost for EC in the different types of produced water was made to assess how realistic it is for onshore and offshore applications.:ERKLÄRUNG DES PROMOVENDEN I ACKNOLEDGEMENT III ABSTRACT V TABLE OF CONTENT VII LIST OF FIGURES IX LIST OF TABLES X LIST OF EQUATIONS XII ABBREVIATIONS XIV 1. INTRODUCTION 1 2. PRODUCED WATER 6 2.1 Characterization of Oilfield Produced Water 6 2.2 Produced Water Management 10 2.2.1 Discharge and Regulations 10 2.2.2 Efforts on Reuse 11 2.2.3 Cost 14 3. PRODUCED WATER TREATMENT 17 3.1 Most Common Primary Treatment 17 3.1.1 Hydrocyclones 17 3.1.2 Flotation unit 18 3.2 Further Water Treatment Technologies 19 3.2.1 Membrane Process 19 3.2.1.1 Microfiltration 19 3.2.1.2 Ultrafiltration 21 3.2.1.3 Nanofiltration 23 3.2.1.4 Reverse Osmosis 24 3.2.1.5 Forward osmosis 24 3.2.2 Electrodialysis 25 3.2.3 Biological treatment 28 3.2.3.1 Aerobic and anaerobic process 28 3.2.3.2 Combining membrane and bio-reactor 29 3.2.4 Oxidative process 30 3.2.4.1 Oxidation process 30 3.2.4.2 Anodic oxidation 32 3.2.5 Thermal technology 34 3.2.5.1 Evaporation 34 3.2.5.2 Eutectic freeze crystallization 35 3.2.6 Adsorption and ion-exchange 36 3.3 Electrocoagulation 39 3.3.1 Colloidal Stability Theory 39 3.3.2 Theory of Electrocoagulation 40 3.3.3 Mechanism of Abatement of Impurities 44 3.3.4 Operational parameters and efficiency 49 4. MATERIALS AND METHODS 51 4.1 Analytical Techniques and Synthetic Solutions 51 4.1.1 Analytical Techniques 51 4.1.2 Synthetic Produced Water 51 4.2 Design of Experiment and Models 54 4.3 Experimental Protocol for EC 56 4 .4 Development of the new Electrocoagulation cell 57 4.5 Real Produced water 58 5. RESULTS AND DISCUSSION 59 5.1 Designing EC Cell Process 59 5.1.1 Computational Fluid Dynamics for EC manufacturing 59 5.2 Preliminary Experiments 61 5.2.1 TOC Removal and Residence Time Determination 61 5.2.2 Aluminum Concentration 64 5.3 Models Quality and Range of Validity 66 5.3.1 TOC Removal 66 5.3.2 Turbidity Removal 69 5.3.3 Final pH value 71 5.3.4 Ionic Strength and Interpolation for Different Salinities 73 5.3.5 Partial Conclusions 76 5.4 Evolution of the Final pH Value 78 5.5 Operation Region for Effective Treatment of Produced Water with EC 80 5.5.1 Produced Water with Low Salinity 80 Organic Compounds Removal 80 Turbidity Removal 83 5.5.2 Produced Water with Medium Salinity 84 Organic Compounds Removal 84 Turbidity Removal 86 5.5.3 Produced Water with High Salinity 87 Organic Compounds Removal 87 5.6 Influence of Hydrogen Carbonate 90 5.7 Real Produced water 91 5.8 Boron Removal 93 5.9 Estimation of the Size for EC in Full scale 94 5.10 Produced Water with Very Low Salinity and EC 95 5.11 Estimation of Operation Cost 96 6. CONCLUSION AND RECOMMENDATIONS 98 6.1 Conclusion 98 6.2 Recommendations for Future Work 101 Scale up on EC for upstream 101 Further processing and reuse 101 Online optimization for EC 101 Recommendations for any research related to upstream produced water 101 BIBLIOGRAPHY 102 APPENDIX A 117 APPENDIX B 120

Der Forschungsgegenstand der vorliegenden Arbeit ist die kontinuierliche Herstellung eines profilförmigen Bauteils aus dem Bor-Mangan-Stahl 22MnB5 mit lokal bzw. global definierten mechanischen Eigenschaften. Dabei laufen die Formgebung und Wärmebehandlung (WBH) parallel ab. Die Hauptformgebung erfolgt zunächst im Lieferzustand, an die sich die Wärmbehandlung und die finale Formgebung anschließen. Während der WBH wird das ferritische Anfangsgefüge beim Erwärmen in Austenitgefüge und anschließend durch eine rasche Abkühlung größer 30 K/s in Martensitgefüge umgewandelt. Die Induktorform, -frequenz und die -leistung beeinflussen hierbei maßgeblich die Aufheizrate und das Erwärmungsbild. Durch kontinuierliche Formgebung und die gezielte WBH sind Profilbauteile mit Bauteilfestigkeiten bis 1500 MPa effizient herstellbar. Im Anschluss an eine Machbarkeitsstudie werden experimentelle und simulative Untersuchungen durchgeführt und die gewonnenen Ergebnisse miteinander verglichen. Dadurch kann die prinzipielle Eignung des FE-Modells nachgewiesen werden. Im Weiteren erfolgt der Vergleich von drei verschiedenen Fertigungsrouten, wobei das Hauptaugenmerk auf der erforderlichen Umformkraft und der erreichbaren Formgenauigkeit liegt. Auf Basis der Simulationsergebnisse kann festgehalten werden, dass mittels der untersuchten Technologie höchstfeste und formgenaue Profilbauteile mit definierten mechanischen Eigenschaften herstellbar sind. Der Einsatz der Technologie birgt somit ein enormes Leichtbaupotenzial. Dennoch gibt es Hemmnisse die Technologie einzusetzen, da „Wärme“ in den traditionell kalt ablaufenden Umformprozess eingebracht wird. Die Arbeit soll dazu beitragen, diese Barriere abzubauen.:1 EINLEITUNG 2 STAND DER FORSCHUNG UND ENTWICKLUNG 3 HANDLUNGSBEDARF, ZIELSETZUNG UND LÖSUNGSWEG 4 VERSUCHSPLANUNG 5 VERWENDETE WERKSTOFFE SOWIE ANLAGEN- UND WERKZEUGTECHNIK ZUR ENTWICKLUNG EINER TECHNOLOGIE ZUR HERSTELLUNG EINTEILIGER, EIGENSCHAFTSSKALIERTER PROFILBAUTEILE 6 REFERENZVERSUCHE V-GESENKBIEGEN UND KALTWALZPROFILIEREN EINES HUTPROFILS AUS 22MNB5 7 STATIONÄRES AUFHEIZVERHALTEN EINES RINGINDUKTORS UND ABSCHRECKEN MITTELS UNTERSCHIEDLICHER KÜHLMEDIEN 8 INTEGRATION EINER WÄRMEBEHANDLUNG IN DEN KONTINUIERLICHEN WALZPROFILIERPROZESS 9 ZUSAMMENFASSUNG 10 AUSBLICK / The research object of the present work is the continuous production of an open profile component made of the manganese-boron steel 22MnB5 with locally or globally defined mechanical properties. The shaping and heat treatment (SHT) take place in one process. The main shaping is first carried out in the as-delivered condition, followed by heat treatment and final shaping. During the heat treatment, the initial ferritic microstructure is transformed into an austenitic state during heating and then into a martensitic microstructure by rapid cooling at a rate of more than 30 K/s. The geometry of the induction coil, the frequency and the heating power have a significant influence on the heating rate and the heating effect. Through continuous shaping and controlled SHT, profile components with strengths of up to 1500 MPa can be produced efficiently. Following a feasibility study, experimental and simulative investigations were carried out and the results obtained were compared with each other. In this way, the principle suitability of the FE model could be demonstrated. In further steps, three different production routes were com-pared, whereby the main focus was on the required forming force and the achievable forming accuracy. Based on the obtained results, it can be stated that the investigated technology can be used to produce high-strength and dimensionally accurate profile components and defined mechanical properties with high output rate. The use of this technology thus offers a huge lightweight potential. However, as additional heat is introduced into the traditionally cold forming process, the process is more complexity and this constitutes a barrier to the use of the technology. This work is intended to overcome this barrier.:1 EINLEITUNG 2 STAND DER FORSCHUNG UND ENTWICKLUNG 3 HANDLUNGSBEDARF, ZIELSETZUNG UND LÖSUNGSWEG 4 VERSUCHSPLANUNG 5 VERWENDETE WERKSTOFFE SOWIE ANLAGEN- UND WERKZEUGTECHNIK ZUR ENTWICKLUNG EINER TECHNOLOGIE ZUR HERSTELLUNG EINTEILIGER, EIGENSCHAFTSSKALIERTER PROFILBAUTEILE 6 REFERENZVERSUCHE V-GESENKBIEGEN UND KALTWALZPROFILIEREN EINES HUTPROFILS AUS 22MNB5 7 STATIONÄRES AUFHEIZVERHALTEN EINES RINGINDUKTORS UND ABSCHRECKEN MITTELS UNTERSCHIEDLICHER KÜHLMEDIEN 8 INTEGRATION EINER WÄRMEBEHANDLUNG IN DEN KONTINUIERLICHEN WALZPROFILIERPROZESS 9 ZUSAMMENFASSUNG 10 AUSBLICK

In der vorliegenden Arbeit wird erstmals das QQDS-Magnetspektrometer für die höchstauflösende Ionenstrahlanalytik leichter Elemente am Helmholtz-Zentrum Dresden-Rossendorf umfassend vorgestellt. Zusätzlich werden sowohl alle auf die Analytik Einfluss nehmenden Parameter untersucht als auch Methoden und Modelle vorgestellt, wie deren Einfluss vermieden oder rechnerisch kompensiert werden kann. Die Schwerpunkte dieser Arbeit gliedern sich in fünf Bereiche. Der Erste ist der Aufbau und die Inbetriebnahme des QQDS-Magnetspektrometers, der zugehörige Streukammer mit allen Peripheriegeräten und des eigens für die höchstauflösende elastische Rückstoßanalyse entwickelten Detektors. Sowohl das umgebaute Spektrometer als auch der im Rahmen dieser Arbeit gebaute Detektor wurden speziell an experimentelle Bedingungen für die höchstauflösende Ionenstrahlanalytik leichter Elemente angepasst und erstmalig auf einen routinemäßigen Einsatz hin getestet. Der Detektor besteht aus zwei Komponenten. Zum einen befindet sich am hinteren Ende des Detektors eine Bragg-Ionisationskammer, die zur Teilchenidentifikation genutzt wird. Zum anderen dient ein Proportionalzähler, der eine Hochwiderstandsanode besitzt und direkt hinter dem Eintrittsfenster montiert ist, zur Teilchenpositionsbestimmung im Detektor. Die folgenden zwei Schwerpunkte beinhalten grundlegende Untersuchungen zur Ionen-Festkörper-Wechselwirkung. Durch die Verwendung eines Magnetspektrometers ist die Messung der Ladungszustandsverteilung der herausgestreuten Teilchen direkt nach einem binären Stoß sowohl möglich als auch für die Analyse notwendig. Aus diesem Grund werden zum einen die Ladungszustände gemessen und zum anderen mit existierenden Modellen verglichen. Außerdem wird ein eigens entwickeltes Modell vorgestellt und erstmals im Rahmen dieser Arbeit angewendet, welches den ladungszustandsabhängigen Energieverlust bei der Tiefenprofilierung berücksichtigt. Es wird gezeigt, dass ohne die Anwendung dieses Modells die Tiefenprofile nicht mit den quantitativen Messungen mittels konventioneller Ionenstrahlanalytikmethoden und mit der Dickenmessung mittels Transmissionselektronenmikroskopie übereinstimmen, und damit falsche Werte liefern würden. Der zweite für die Thematik wesentliche Aspekt der Ionen-Festkörper-Wechselwirkung, sind die Probenschäden und -modifikationen, die während einer Schwerionen-bestrahlung auftreten. Dabei wird gezeigt, dass bei den hier verwendeten Energien sowohl elektronisches Sputtern als auch elektronisch verursachtes Grenzflächendurchmischen eintreten. Das elektronische Sputtern kann durch geeignete Strahlparameter für die meisten Proben ausreichend minimiert werden. Dagegen ist der Einfluss der Grenzflächendurchmischung meist signifikant, so dass dieser analysiert und in der Auswertung berücksichtigt werden muss. Schlussfolgernd aus diesen Untersuchungen ergibt sich für die höchstauflösende Ionenstrahlanalytik leichter Elemente am Rossendorfer 5-MV Tandembeschleuniger, dass die geeignetsten Primärionen Chlor mit einer Energie von 20 MeV sind. In Einzelfällen, wie zum Beispiel der Analyse von Bor, muss die Energie jedoch auf 6,5 MeV reduziert werden, um das elektronische Sputtern bei der notwendigen Fluenz unterhalb der Nachweisgrenze zu halten. Der vierte Schwerpunkt ist die Untersuchung von sowohl qualitativen als auch quantitativen Einflüssen bestimmter Probeneigenschaften, wie beispielsweise Oberflächenrauheit, auf die Form des gemessenen Energiespektrums beziehungsweise auf das analysierte Tiefenprofil. Die Kenntnis der Rauheit einer Probe an der Oberfläche und an den Grenzflächen ist für die Analytik unabdingbar. Als Resultat der genannten Betrachtungen werden die Einflüsse von Probeneigenschaften und Ionen-Festkörper-Wechselwirkungen auf die Energie- beziehungsweise Tiefenauflösung des Gesamtsystems beschrieben, berechnet und mit der konventionellen Ionenstrahlanalytik verglichen. Die Möglichkeiten der höchstauflösenden Ionenstrahlanalytik werden zudem mit den von anderen Gruppen veröffentlichten Komplementärmethoden gegenübergestellt. Der fünfte und letzte Schwerpunkt ist die Analytik leichter Elemente in ultradünnen Schichten unter Berücksichtigung aller in dieser Arbeit vorgestellten Modelle, wie die Reduzierung des Einflusses von Strahlschäden oder die Quantifizierung der Elemente im dynamischen Ladungszustandsnichtgleichgewicht. Es wird die Tiefenprofilierung von Mehrschichtsystemen, bestehend aus SiO2-Si3N4Ox-SiO2 auf Silizium, von Ultra-Shallow-Junction Bor-Implantationsprofilen und von ultradünnen Oxidschichten, wie zum Beispiel High-k-Materialien, demonstriert. / In this thesis the QQDS magnetic spectrometer that is used for high resolution ion beam analysis (IBA) of light elements at the Helmholtz-Zentrum Dresden-Rossendorf is presented for the first time. In addition all parameters are investigated that influence the analysis. Methods and models are presented with which the effects can be minimised or calculated. There are five focal points of this thesis. The first point is the construction and commissioning of the QQDS magnetic spectrometer, the corresponding scattering chamber with all the peripherals and the detector, which is specially developed for high resolution elastic recoil detection. Both the reconstructed spectrometer and the detector were adapted to the specific experimental conditions needed for high-resolution Ion beam analysis of light elements and tested for routine practice. The detector consists of two compo-nents. At the back end of the detector a Bragg ionization chamber is mounted, which is used for the particle identification. At the front end, directly behind the entrance window a proportional counter is mounted. This proportional counter includes a high-resistance anode. Thus, the position of the particles is determined in the detector. The following two points concern fundamental studies of ion-solid interaction. By using a magnetic spectrometer the charge state distribution of the particles scattered from the sample after a binary collision is both possible and necessary for the analysis. For this reason the charge states are measured and compared with existing models. In addition, a model is developed that takes into account the charge state dependent energy loss. It is shown that without the application of this model the depth profiles do not correspond with the quantitative measurements by conventional IBA methods and with the thickness obtained by transmission electron microscopy. The second fundamental ion-solid interaction is the damage and the modification of the sample that occurs during heavy ion irradiation. It is shown that the used energies occur both electronic sputtering and electronically induced interface mixing. Electronic sputtering is minimised by using optimised beam parameters. For most samples the effect is below the detection limit for a fluence sufficient for the analysis. However, the influence of interface mixing is so strong that it has to be included in the analysis of the layers of the depth profiles. It is concluded from these studies that at the Rossendorf 5 MV tandem accelerator chlorine ions with an energy of 20 MeV deliver the best results. In some cases, such as the analysis of boron, the energy must be reduced to 6.5 MeV in order to retain the electronic sputtering below the detection limit. The fourth focus is the study of the influence of specific sample properties, such as surface roughness, on the shape of a measured energy spectra and respectively on the analysed depth profile. It is shown that knowledge of the roughness of a sample at the surface and at the interfaces for the analysis is needed. In addition, the contribution parameters limiting the depth resolution are calculated and compared with the conventional ion beam analysis. Finally, a comparison is made between the high-resolution ion beam analysis and complementary methods published by other research groups. The fifth and last focus is the analysis of light elements in ultra thin layers. All models presented in this thesis to reduce the influence of beam damage are taken into account. The dynamic non-equilibrium charge state is also included for the quantification of elements. Depth profiling of multilayer systems is demonstrated for systems consisting of SiO2-Si3N4Ox-SiO2 on silicon, boron implantation profiles for ultra shallow junctions and ultra thin oxide layers, such as used as high-k materials.

In der vorliegenden Arbeit wird erstmals das QQDS-Magnetspektrometer für die höchstauflösende Ionenstrahlanalytik leichter Elemente am Helmholtz-Zentrum Dresden-Rossendorf umfassend vorgestellt. Zusätzlich werden sowohl alle auf die Analytik Einfluss nehmenden Parameter untersucht als auch Methoden und Modelle vorgestellt, wie deren Einfluss vermieden oder rechnerisch kompensiert werden kann. Die Schwerpunkte dieser Arbeit gliedern sich in fünf Bereiche. Der Erste ist der Aufbau und die Inbetriebnahme des QQDS-Magnetspektrometers, der zugehörige Streukammer mit allen Peripheriegeräten und des eigens für die höchstauflösende elastische Rückstoßanalyse entwickelten Detektors. Sowohl das umgebaute Spektrometer als auch der im Rahmen dieser Arbeit gebaute Detektor wurden speziell an experimentelle Bedingungen für die höchstauflösende Ionenstrahlanalytik leichter Elemente angepasst und erstmalig auf einen routinemäßigen Einsatz hin getestet. Der Detektor besteht aus zwei Komponenten. Zum einen befindet sich am hinteren Ende des Detektors eine Bragg-Ionisationskammer, die zur Teilchenidentifikation genutzt wird. Zum anderen dient ein Proportionalzähler, der eine Hochwiderstandsanode besitzt und direkt hinter dem Eintrittsfenster montiert ist, zur Teilchenpositionsbestimmung im Detektor. Die folgenden zwei Schwerpunkte beinhalten grundlegende Untersuchungen zur Ionen-Festkörper-Wechselwirkung. Durch die Verwendung eines Magnetspektrometers ist die Messung der Ladungszustandsverteilung der herausgestreuten Teilchen direkt nach einem binären Stoß sowohl möglich als auch für die Analyse notwendig. Aus diesem Grund werden zum einen die Ladungszustände gemessen und zum anderen mit existierenden Modellen verglichen. Außerdem wird ein eigens entwickeltes Modell vorgestellt und erstmals im Rahmen dieser Arbeit angewendet, welches den ladungszustandsabhängigen Energieverlust bei der Tiefenprofilierung berücksichtigt. Es wird gezeigt, dass ohne die Anwendung dieses Modells die Tiefenprofile nicht mit den quantitativen Messungen mittels konventioneller Ionenstrahlanalytikmethoden und mit der Dickenmessung mittels Transmissionselektronenmikroskopie übereinstimmen, und damit falsche Werte liefern würden. Der zweite für die Thematik wesentliche Aspekt der Ionen-Festkörper-Wechselwirkung, sind die Probenschäden und -modifikationen, die während einer Schwerionen-bestrahlung auftreten. Dabei wird gezeigt, dass bei den hier verwendeten Energien sowohl elektronisches Sputtern als auch elektronisch verursachtes Grenzflächendurchmischen eintreten. Das elektronische Sputtern kann durch geeignete Strahlparameter für die meisten Proben ausreichend minimiert werden. Dagegen ist der Einfluss der Grenzflächendurchmischung meist signifikant, so dass dieser analysiert und in der Auswertung berücksichtigt werden muss. Schlussfolgernd aus diesen Untersuchungen ergibt sich für die höchstauflösende Ionenstrahlanalytik leichter Elemente am Rossendorfer 5-MV Tandembeschleuniger, dass die geeignetsten Primärionen Chlor mit einer Energie von 20 MeV sind. In Einzelfällen, wie zum Beispiel der Analyse von Bor, muss die Energie jedoch auf 6,5 MeV reduziert werden, um das elektronische Sputtern bei der notwendigen Fluenz unterhalb der Nachweisgrenze zu halten. Der vierte Schwerpunkt ist die Untersuchung von sowohl qualitativen als auch quantitativen Einflüssen bestimmter Probeneigenschaften, wie beispielsweise Oberflächenrauheit, auf die Form des gemessenen Energiespektrums beziehungsweise auf das analysierte Tiefenprofil. Die Kenntnis der Rauheit einer Probe an der Oberfläche und an den Grenzflächen ist für die Analytik unabdingbar. Als Resultat der genannten Betrachtungen werden die Einflüsse von Probeneigenschaften und Ionen-Festkörper-Wechselwirkungen auf die Energie- beziehungsweise Tiefenauflösung des Gesamtsystems beschrieben, berechnet und mit der konventionellen Ionenstrahlanalytik verglichen. Die Möglichkeiten der höchstauflösenden Ionenstrahlanalytik werden zudem mit den von anderen Gruppen veröffentlichten Komplementärmethoden gegenübergestellt. Der fünfte und letzte Schwerpunkt ist die Analytik leichter Elemente in ultradünnen Schichten unter Berücksichtigung aller in dieser Arbeit vorgestellten Modelle, wie die Reduzierung des Einflusses von Strahlschäden oder die Quantifizierung der Elemente im dynamischen Ladungszustandsnichtgleichgewicht. Es wird die Tiefenprofilierung von Mehrschichtsystemen, bestehend aus SiO2-Si3N4Ox-SiO2 auf Silizium, von Ultra-Shallow-Junction Bor-Implantationsprofilen und von ultradünnen Oxidschichten, wie zum Beispiel High-k-Materialien, demonstriert. / In this thesis the QQDS magnetic spectrometer that is used for high resolution ion beam analysis (IBA) of light elements at the Helmholtz-Zentrum Dresden-Rossendorf is presented for the first time. In addition all parameters are investigated that influence the analysis. Methods and models are presented with which the effects can be minimised or calculated. There are five focal points of this thesis. The first point is the construction and commissioning of the QQDS magnetic spectrometer, the corresponding scattering chamber with all the peripherals and the detector, which is specially developed for high resolution elastic recoil detection. Both the reconstructed spectrometer and the detector were adapted to the specific experimental conditions needed for high-resolution Ion beam analysis of light elements and tested for routine practice. The detector consists of two compo-nents. At the back end of the detector a Bragg ionization chamber is mounted, which is used for the particle identification. At the front end, directly behind the entrance window a proportional counter is mounted. This proportional counter includes a high-resistance anode. Thus, the position of the particles is determined in the detector. The following two points concern fundamental studies of ion-solid interaction. By using a magnetic spectrometer the charge state distribution of the particles scattered from the sample after a binary collision is both possible and necessary for the analysis. For this reason the charge states are measured and compared with existing models. In addition, a model is developed that takes into account the charge state dependent energy loss. It is shown that without the application of this model the depth profiles do not correspond with the quantitative measurements by conventional IBA methods and with the thickness obtained by transmission electron microscopy. The second fundamental ion-solid interaction is the damage and the modification of the sample that occurs during heavy ion irradiation. It is shown that the used energies occur both electronic sputtering and electronically induced interface mixing. Electronic sputtering is minimised by using optimised beam parameters. For most samples the effect is below the detection limit for a fluence sufficient for the analysis. However, the influence of interface mixing is so strong that it has to be included in the analysis of the layers of the depth profiles. It is concluded from these studies that at the Rossendorf 5 MV tandem accelerator chlorine ions with an energy of 20 MeV deliver the best results. In some cases, such as the analysis of boron, the energy must be reduced to 6.5 MeV in order to retain the electronic sputtering below the detection limit. The fourth focus is the study of the influence of specific sample properties, such as surface roughness, on the shape of a measured energy spectra and respectively on the analysed depth profile. It is shown that knowledge of the roughness of a sample at the surface and at the interfaces for the analysis is needed. In addition, the contribution parameters limiting the depth resolution are calculated and compared with the conventional ion beam analysis. Finally, a comparison is made between the high-resolution ion beam analysis and complementary methods published by other research groups. The fifth and last focus is the analysis of light elements in ultra thin layers. All models presented in this thesis to reduce the influence of beam damage are taken into account. The dynamic non-equilibrium charge state is also included for the quantification of elements. Depth profiling of multilayer systems is demonstrated for systems consisting of SiO2-Si3N4Ox-SiO2 on silicon, boron implantation profiles for ultra shallow junctions and ultra thin oxide layers, such as used as high-k materials.