In this study, 1/2 £f mode SMR filters on Si substrates by reactive RF magnetron sputtering method were fabricated. In addition, the thermal annealing process was adopted to improve the insertion loss of SMR filter. The Bragg reflector in SMR is alternately mounted by high and low acoustic impedance materials, with low acoustic impedance material of SiO2 and high acoustic impedance material of W. We could obtained three kinds of crystal structures of W, £\ - phase W¡B£] - phase W and £\ & £] - mixed phase W, respectively, it could be obtained by modulating the sputtering recipe. £\ - phase W possesses higher acoustic impedance and is suitable for high acoustic impedance material in bragg reflector. The piezoelectric layer of ZnO is sputtered by a 2-step deposition method on Si substrates with different temperature. The ZnO film with stronger C-axis (002) orientation and lower surface roughness value could be obtained at substrate temperature of 200 ¢J, which is suitable for fabricating SMR device. After the SMR filter had completed, the device is thermal annealed with CTA¡BRTA and RTA in O2 ambient. After thermal treatment, the properties of filters are improved. The properties could be optimized with RTA in O2 ambient condition. The insertion loss was improved from -12.03 dB to -6.96 dB. The film characteristics of ZnO changes after the SMR processed thermal treatment. The strongest C-axis (002) intensity with the lowest surface roughness value at 400 ¢J annealing temperature could be obtained, in that, approximate equal Zn:O ratio could be achieved by XPS examination. The central frequency of SMR filter drifted to higher value as the temperature of thermal treatment increased, which is attributed to the changes of the ZnO acoustic velocity(£o) after thermal treatment.

No description available.

This thesis utilized pulse shaping technology to study chirp response of SSBR and attempt to analyze contribution of SSBR in mode-locked process. A home-made pulse shaping system (based on 4f scheme) with Freezing algorithm and Gerchberg-Saton algorithm was demonstrated. A normal dispersion at nonabsorbable wavelength and an anomalous dispersion around absorbable wavelength region in SSBR were obtained. Meanwhile, a Kramers-Kronig relation like behavior of pulse depression/broadening ratio in the strained multiple quantum well was observed and also refer to that pulse starting force is stronger at short wavelength. Decrease of pulse compression with increasing power of negative chirp incident pulse was characterized. Unclear power dependence for positive chirp case was also performed. These could be due to competition of band-filling and pump dump process. In addition, higher reflectivity and tendency of lower saturation fluence of SSBR for negative chirp incident pulse were observed.

In conventional optics, curved lenses focus light rays to a focal point after light passes through them. These lenses have been designed to shape the wavefront of the incident beam as it emerges from the curved surface of the lens. Conventional lenses suffer from many limitations, such as limited optical quality for imaging and integration difficulties with other optical components due to their large size, huge thickness, as well as being difficult to manufacture. Using subwavelength structure, it is possible to fabricate flat, thin lenses (metalenses) with new optical properties not found in nature, in which many fundamental properties of light (like polarization, focal point, and phase) can be controlled with high accuracy. This results in high resolution and high quality of optical imaging. This thesis demonstrates a new design of reflective metalens, in which the metalens structure is integrated with another optical component: Distributed Bragg Reflector (DBR). The metalens planer is a two-dimensional ultrathin planer arranged as an array with subwavelength separation distance. In recent works, a metalens was integrated with (metal/dielectric)-mirrors to form reflective metalenses. Simulation results show that, high-focusing efficiency is obtained for the lens (> 60%) with the ability to reflect96% of total incident optical power. In comparison, the new metalens-DBR design - processes maintain the same high-focusing efficiency, but with a reflectance of 99.99%, which makes it promising for optoelectronic integration and perfectly suitable for integration with Vertical Cavity Surface Emitting Lasers (VCSEL) technology. This study of the optical properties: focal length; optical aberration; insensitivity to light polarization; and focusing efficiency of demonstrated metalens was done mainly by Finite Difference Time Domaine (FDTD) by using Lumerical FDTD solution.

Selectively-transparent and conducting photonic crystals (STCPCs) made of alternating layers of sputtered indium-tin oxide (ITO) and spin-coated silica (SiO2) nanoparticle films have potential applications in micromorph solar cells and building integrated photovoltaics (BIPVs). In this work, theoretical calculations have been performed to show performance enhancement of the micromorph solar cell upon integration of the STCPC an intermediate reflector. Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with STCPC rear contacts are demonstrated in proof-of-concept devices. A 10% efficiency increase in a 135nm thick a-Si:H cell on an STCPC reflector with Bragg peak at 620nm was observed, while the transmitted solar irradiance and illuminance are determined to be 295W/m2 and 3480 lux, respectively. The STCPC with proper Bragg peak positioning can boost the a-Si:H cell performance while transmitting photons that can be used as heat and lighting sources in building integrated photovoltaic applications.

Selectively-transparent and conducting photonic crystals (STCPCs) made of alternating layers of sputtered indium-tin oxide (ITO) and spin-coated silica (SiO2) nanoparticle films have potential applications in micromorph solar cells and building integrated photovoltaics (BIPVs). In this work, theoretical calculations have been performed to show performance enhancement of the micromorph solar cell upon integration of the STCPC an intermediate reflector. Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with STCPC rear contacts are demonstrated in proof-of-concept devices. A 10% efficiency increase in a 135nm thick a-Si:H cell on an STCPC reflector with Bragg peak at 620nm was observed, while the transmitted solar irradiance and illuminance are determined to be 295W/m2 and 3480 lux, respectively. The STCPC with proper Bragg peak positioning can boost the a-Si:H cell performance while transmitting photons that can be used as heat and lighting sources in building integrated photovoltaic applications.

Récemment, de nouvelles techniques ont été développées pour la fabrication des réseaux de Bragg à profil complexe. Ces composants photoniques sont utilisés dans plusieurs applications émergentes telles que la compensation de la dispersion pour les systèmes de communication de longue portée, les lasers à fibre, multiplexeurs et détecteurs optiques. Le diagnostic après inscription devrait fournir les informations nécessaires pour l’amélioration de la fabrication des réseaux de Bragg. Nous savons que les propriétés spectrales du réseau de Bragg sont liées au profil d’indice Δn. Les techniques de mesure directes, telles que la diffraction latérale de Krug, permettent de retrouver l’amplitude de modulation d’indice le long du réseau. Cependant, ces techniques sont insensibles aux fluctuations de phase. Une méthode alternative de caractérisation indirecte fondée sur l’algorithme de Layer-Peeling (LP) a été proposée. Toutefois elle ne peut pas être appliquée à la caractérisation des réseaux longs en raison de la propagation du bruit de calcul. Dans cette thèse nous avons présenté une nouvelle technique pour la mesure directe de l’amplitude et de la phase du profil d’indice le long du réseau de Bragg fondée sur la luminescence bleue (LB) induite par l’irradiation UV. Nos résultats expérimentaux de la mesure du profil de modulation d’indice sont en bonne correspondance avec la méthode de Krug. La méthode que nous proposons peut être appliquée à la caractérisation des réseaux longs. Elle permet de retrouver simultanément l’amplitude de modulation d’indice Δnac(z), la fonction du chirp et détecter le changement de l’indice moyen Δndc(z). / N the last decade new techniques were developed for fabrication of sophisticated Fiber Bragg Gratings (FGBs). This has been motivated by the emergence of many applications such as dispersion compensation for long-haul communication systems, DFB fiber lasers, optical add/drop multiplexers, and optical sensors. Post-fabrication diagnostics should provide relevant information to enhance the FBG fabrication process. It is well known that the FBG spectral properties are related to the index profile Δn. Direct measurement techniques, such as the side diffraction method reported by P. Krug, allow determining the index modulation amplitude along the FBG. Nevertheless, these techniques provide no information about phase fluctuations. An alternative method of indirect characterization, based on the Layer-Peeling (LP) algorithm, consists in Bragg grating profile reconstruction from its complex reflectivity. However, the LP method is unstable when applied to characterize long FBGs (>1mm) due to the error propagation effect. In this thesis we have shown the principle of a novel technique for the direct measurement of amplitude and phase variations of the index modulation along an FBG based on the blue luminescence (BL). Our experimental results are in a good agreement with the according Krug characterization. The proposed method of FBG characterization in amplitude and phase using the UV induced BL can be applied to long gratings (up to tens of centimeters) having complex index modulation profiles. It allows retrieving simultaneously the index profile modulation Δnac(z) and the chirp function, localizing phase shifts, and also detecting the mean index change Δndc(z).

Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si-diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1% [1]. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1 MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitranparent distributed Bragg reflector (DBR) on the top; b) 5:5 MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5:5 MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.

The short-term jitter and longer-term wander of the frequency sweep profile of a Vernier-Tuned Distributed Bragg Reflector (VT-DBR) laser at 1550 nm used in optical coherence tomography (OCT) and other sensing applications is characterized in this work. The VT-DBR has demonstrated success in source-swept OCT (SSOCT), performing both intensity and phase-sensitive OCT. The purpose of this paper is to investigate one of the unique aspects of the VT-DBR laser that makes it successful in OCT: the stability of the linear optical frequency sweep. A highly stable linear optical frequency sweep implies benefits for further fiber sensing applications including fiber Bragg grating and spectroscopy sensors. Short-term jitter measurements of the optical frequency sweep are taken using a 3-cavity 100 GHz free spectral range solid etalon, an athermal fiber Bragg grating, a molecular-based gas absorption reference cell, and a Mach-Zehnder interferometer. These four optical filters are used to convert time fluctuations into intensity fluctuations that can be measured by high speed optical receivers. Short term jitter values on the order of 0.5 – 0.6 pm RMS (63 – 82 MHz RMS) are typical values in the VT-DBR lasers systems characterized in this work. This level of jitter is compelling for OCT and fiber-sensing applications. Longer-term wander is characterized using a multiple-gas absorption reference cell. The long term stability and temperature insensitivity of the absorption cell is ideal for long-term wander characterization of the laser frequency sweeps. Wander values on the order of 2.6 pm of wavelength shift over an 8 hour time frame are reported in this work. The slope of the frequency versus time function of the laser sweep, on the order of 100 MHz/sample, is found to deviate by no more than 0.03% over the same 8 hour time frame. Both the long term wavelength shift and consistency of the slope indicate that these sources will perform well in OCT and fiber sensing applications. Mechanisms responsible for short-term jitter and longer- term wavelength wander likely include contributions from the laser source itself and from the high speed electronic drive circuitry that creates the wavelength ramp. Investigation of ambient temperature’s influence on the wavelength wander is also highlighted in the work.

This thesis describes the incorporation within a semiconductor laser of a multiple quantum well InGaAsP/InP Electron Bragg Reflector (EBR). The EBR is intended to improve laser performance by inhibiting the escape of hot electrons from the laser active region by quantum mechanical Bragg reflection. To the author's knowledge, this investigation represents the first attempt to realize an EBR in the InGaAsP/InP material system. Computer models based on a transfer matrix method for the solution of Schrodinger's equation were written to obtain the EBR design. The transfer matrix method is described. Extensions to the transfer matrix method for optics are presented and are demonstrated to provide more than an order of magnitude improvement in computational efficiency for the calculation of the complex TE-mode propagation constant for planar graded-index waveguides with absorption or gain. The EBR designed for this work incorporates several new features. Deleterious band bending in the vicinity of the EBR is minimized by exploiting material strain to reduce the density of hole states in the EBR quantum wells. To maximize reflection bandwidth and relax fabrication tolerances, the EBR design used well widths that decreased with increasing depth into the p-type InP cladding. By the placement of the EBR adjacent to the separate confinement region, a return path was provided for electrons that scattered inelastically within the EBR. Moreover, the EBR structure was designed to support no bound electron states, so that the recombination of electrons with holes in the EBR would be minimal. To the author's knowledge, the EBR-equipped laser fabricated for this work represents the first attempt to exploit electron state exclusion. To explore the effectiveness of EBRs in the InGaAsP/InP material system, two nearly identical ridge waveguide lasers (one with an EBR, and one without) were designed, fabricated, and tested. The EBR-equipped lasers exhibited an anomalous threshold current temperature dependence which featured a "negative-To" regime (in which the threshold current decreases with increasing temperature), attaining a minimum in threshold current between T=150 K and T=200 K. These lasers had a threshold current temperature stability superior to that of standard lasers within a ~70 K window around the minimum threshold temperature. Experimental evidence suggests that the improved stability is not due to quantum mechanical Bragg reflection provided by the EBR, but is attributable to the temperature-dependent rate of hole escape from the EBR quantum wells into the separate confinement region. The proposed mechanism is described in detail and is supported by theoretical and experimental evidence. The results have implications for device design, because the mechanism by which the superior temperature stability is achieved does not rely on the electron coherence effects; the mathematical model suggests that the mechanism can be exploited to provide superior temperature stability in semiconductor lasers at 300 K or above. / Thesis / Master of Engineering (ME)