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The production industry is getting more and more automated and that implies higher energy consumption. With the increasing awareness of the earth limited resources and the increasing energy prices, energy conservation grows in relevance, both due to cost reduction and environmental benefits. One way to conserve energy is to optimize the energy usage within the business and reduce the losses. Regenerative braking is already in use today for this purpose in vehicles. The aim of this thesis is to investigate how regenerative braking can be fitted into the production industry and what adaptations need to be made. This thesis is based on an earlier study that has set up a mathematical model for energy regeneration in mechatronic systems and the goal of this thesis is to build a test rig and verify the correctness of these models. One suggested improvement to the automotive systems are the introduction of super capacitors as a secondary energy source because they can charge more rapidly compared to batteries which is required during the expected fast accelerations. In the performed tests an efficiency improvement of 10 % was shown. The earlier study however suggests an efficiency rate of 60% but those models do not include frictional nor electrical losses. The results are complemented by a discussion were a number of changes to the design is proposed. A different motor control system would significantly enhance the rig and a result more like the expected can be achieved. / Det ökade antalet elektromekaniska maskiner i industriella tillämpningar medför en ökad energianvändning. Då våra begränsade resurser mer och mer belyses i media och med stigande energipriser ökar intresset hos företagen för att minska sin energianvändning, dels för att reducera sina kostnader och dels för att minska den miljöbelastning slutprodukten medför. Ett sätt att göra detta är att minska energiförlusterna inom sin produktion. Regenerativ bromsning är en teknik som används i fordon idag och kan användas för detta syfte. Detta arbete ska undersöka hur sådan teknik kan användas i tillverkningsindustrin och vilka förändringar som måste göras. Ett tidigare arbete har satt upp teoretiska modeller för detta och det här arbetet syftar till att bygga en tesrigg för att praktiskt undersöka modellernas korrekthet. En förbättring mot det system som används i dagens bilar är att införa superkondensatorer som parallell energikälla då dessa är snabbare på att lagra energi än ett batteri och därför passar bättre för de snabba accelerationer och retardationer som förekommer i industriprocesser. De genomförda testerna påverkades negativt av vissa begränsningar i hårdvaran men resultatet visar ändå att regenereringen kan återföra 10 % av energin till kondensatorerna, det motsvarar däremot inte den mängden som de tidigare uppsatta modellerna förutspådde. Orsakerna är olika förluster i systemet som inte modellerna tar hänsyn till. De viktigaste förlustfaktorerna beror på friktion och styrningen av elektroniken. Med en annan typ av motorstyrning kan förlusterna minskas och ett resultat mer likt det förväntade uppnås.

Scaling of electronic circuits from micro- to nanometer size determined the incredible development in computer technology in the last decades. In charge storage capacitors that are the largest components in dynamic random access memories (DRAM), dielectrics with higher permittivity (high-k) were needed to replace SiO2. Therefore ZrO2 has been introduced in the capacitor stack to allow sufficient capacitance in decreasing structure sizes. To improve the capacitance density per cell area, approaches with three dimensional structures were developed in device fabrication. To further enable scaling for future generations, significant efforts to replace ZrO2 as high-k dielectric have been undertaken since the 1990s. In calculations, CaTiO3 has been identified as a potential replacement to allow a significant capacitance improvement. This material exhibits a significantly higher permittivity and a sufficient band gap. The scope of this thesis is therefore the preparation and detailed physical and electrical characterization of ultrathin CaTiO3 layers. The complete capacitor stacks including CaTiO3 have been prepared under ultrahigh vacuum to minimize the influence of adsorbents or contaminants at the interfaces. Various electrodes are evaluated regarding temperature stability and chemical reactance to achieve crystalline CaTiO3. An optimal electrode was found to be a stack consisting of Pt on TiN. Physical experiments confirm the excellent band gap of 4.0-4.2 eV for ultrathin CaTiO3 layers. Growth studies to achieve crystalline CaTiO3 indicate a reduction of crystallization temperature from 640°C on SiO2 to 550°C on Pt. This reduction has been investigated in detail in transmission electron microscopy measurements, revealing a local and partial epitaxial growth of (111) CaTiO3 on top of (111) Pt surfaces. This preferential growth is beneficial to the electrical performance with an increased relative permittivity of 55 with the advantage of a low leakage current comparable to that in amorphous CaTiO3 layers. A detailed electrical analysis of capacitors with amorphous and crystalline CaTiO3 reveals a relative permittivity of 30 for amorphous and an excellent value of 105 for fully crystalline CaTiO3. The permittivity exhibits a quadratic dependence with applied electric field. Crystalline CaTiO3 shows a 1-3% drop in capacitance density and permittivity at a bias voltage of 1V, which is significantly lower compared to all results for SrTiO3 capacitors measured elsewhere. A capacitance equivalent thickness (CET) below 1.0 nm with current densities 1×10−8 A/cm2 have been achieved on carbon electrodes. Finally, CETs of about 0.5 nm with leakage currents of 1 × 10−7 A/cm2 on top of Pt/TiN fulfill the 2016 DRAM requirements following the ITRS road map of 2012. / Die Verkleinerung von elektronischen Bauelementen hin zu nanometerkleinen Strukturen beschreibt die unglaubliche Entwicklung der Computertechnologie in den letzten Jahrzehnten. In Ladungsspeicherkondensatoren, den größten Komponenten in Arbeitsspeichern, wurden dafür Dielektrika benötigt, die eine deutlich höhere Permittivität als SiO2 besitzen. ZrO2 wurde als geeignetes Dielektrikum eingeführt, um eine ausreichende Kapazität bei kleiner werdenen Strukturen sicherzustellen. Zur weiteren Verbesserung der Kapazitätsdichte pro Zellfläche konnten 3D Strukturen in die Chipherstellung integriert werden. Seit den 1990ern wurden parallel bedeutende Anstrengungen unternommen, um ZrO2 als Dielektrikum durch Materialien mit noch höherer Permittivität zu ersetzen. Nach Berechnungen stellt nun CaTiO3 eine mögliche Alternative dar, die eine weitere Verbesserung der Kapazität ermöglicht. Das Material besitzt eine deutlich höhere Permittivität und eine ausreichend große Bandlücke. Diese Arbeit beschäftigt sich deshalb mit Herstellung und detaillierter physikalischer und elektrischer Charakterisierung von extrem dünnen CaTiO3 Schichten. Zusätzlich wurden diverse Elektroden bezüglich ihrer Temperaturstabilität und der chemischen Stabilität untersucht, um kristallines CaTiO3 zu herhalten. Als eine optimale Elektrode stellte sich Pt auf TiN heraus. Physikalische Experimente an extrem dünnen CaTiO3 Schichten bestätigen die Bandlücke von 4,0-4,2 eV. Wachstumsuntersuchungen an kristallinem CaTiO3 zeigen eine Reduktion der Kristallisationstemperatur von 640°C auf SiO2 zu 550°C auf Pt. Diese Reduktion wurde detailliert mittels Transmissionselektronenmikroskopie untersucht. Es konnte für einige Schichten ein partielles lokales epitaktischesWachstum von (111) CaTiO3 auf (111) Pt gemessen werden. Dieses Vorzugswachstum ist vorteilhaft für die elektrischen Eigenschaften durch eine gesteigerte Permittivität von 55 bei gleichzeitig geringem Leckstrom vergleichbar zu amorphen Schichten. Eine genaue elektrische Analyse von Kondensatoren mit amorphen und kristallinem CaTiO3 ergibt eine Permittivität von 30 für amorphe und bis zu 105 für kristalline CaTiO3 Schichten. Die Permittivität zeigt eine quadratische Abhängigheit von der angelegten Spannung. Kristallines CaTiO3 zeigt einen 1-3% Abfall der Permittivität bei 1V, der wesentlich geringer ausfällt als vergleichbare Werte für SrTiO3. Eine zu SiO2 vergleichbare Schichtdicke (CET) von unter 1,0 nm mit Stromdichten von 1×10−8 A/cm2 wurde auf Kohlenstoffsubstraten erreicht. Mit Werten von 0,5 nm bei Leckstromdichten von 1×10−7 A/cm2 auf Pt/TiN Elektroden erfüllen die CaTiO3 Kondensatoren die Anforderungen der ITRS Strategiepläne für Arbeitsspeicher ab 2016.

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This thesis investigates the feasibility of using Silicon Carbide (SiC)-based multiphase inverters (MPIs) for transportation electrification applications. The research begins with a comprehensive review on the state-of-the-art of MPIs, focusing on voltage source inverters (VSIs) and nine-switch inverters (NSIs), with five-, six-, and nine-phase configurations. The quantitative and qualitative analyses demonstrate that the six-phase VSI is the most promising topology, offering reduced DC-capacitor requirements, lower cabling cost, and higher fault tolerance capability while maintaining the same efficiency and power device count of a three-phase VSI. The feasibility of the SiC-based six-phase inverter is further investigated at the vehicle level, where a vehicle model is developed to study the energy consumption under different drive cycles. The resulting indicate an 8% improvement in vehicle mileage and fuel economy of the SiC-based six-phase inverter compared to its Si-based counterpart. This thesis also examines the current and voltage stresses on the DC-bus capacitor in two-level six-phase VSIs. The study considers two configurations of load/winding spatial distribution: symmetric and asymmetric. Consequently, analytical formulas for the DC-bus capacitor current and voltage ripples are derived. Furthermore, simple capacitor sizing rules in six-phase VSIs with different load configurations are provided. The accuracy of the derived formulas is verified by simulation and experimental testing, and their boundary conditions are identified. Six-phase VSI supplying symmetric loads was found to yield the smallest capacitor size. Based on the foregoing technology review and analyses, a holistic design methodology for a 100 kW SiC-based six-phase traction inverter for an electric vehicle application is presented. The proposed methodology considers the device power level, where discrete SiC MOSFETs are utilized, and the DC-capacitor sizing, where a multi-objective optimization algorithm is proposed to find the most suitable capacitor bank. Mechanical and thermal design constraints are also explored to deliver a compact housing with an integrated coolant channel. The resultant inverter design from the proposed electrical-thermal-mechanical design methodology is prototyped and experimentally tested, demonstrating a 7% reduction in DC-capacitor volume and 21% reduction in cabling cost when compared to conventional three-phase inverters of the same volt-ampere rating. The peak power density of the prototype inverter is 70 kW/L, demonstrating a compact design. Besides, the proposed design is benchmarked against commercial six-phase inverter models, whereby the competitiveness of the proposed design is highlighted. Finally, the unique control aspects of six-phase electric motor drives are investigated to identify suitable controls strategies for various operating conditions. The study places special emphasis on high-speed operation and evaluates several overmodulation techniques. An adaptive flux-weakening control algorithm is also proposed for the six-phase motor drive, which significantly improves the DC-bus voltage utilization of the inverter when used in conjunction with overmodulation. Overall, this thesis provides a comprehensive study of SiC-based six-phase traction inverters and proposes a holistic design methodology that considers electrical, thermal, and mechanical aspects. The results demonstrate the feasibility and advantages of SiC-based six-phase traction inverters for electric vehicle applications. / Thesis / Doctor of Philosophy (PhD) / Electric cars are continuously challenged to meet regulatory mandates that become stricter by the day. This is driven by the need for a clean, reliable, affordable, and sustainable transportation system. In this research, a novel, more reliable, and cost-effective power control unit (PCU) is proposed. The PCU manages the power flow regulation between the battery and the motor(s). The proposed PCU employs the same number of devices as a traditional counterpart, yet in a more modular architecture that doubles the safety factor compared to the standard design. In fault scenarios where the traditional PCU would fail, the proposed PCU would continue operating at half power, allowing the driver and passengers to reach a safe destination before the car is repaired. Extensive analyses were undertaken to identify an optimal design in terms of performance, size, and cost. Then, an engineering prototype is constructed and tested on an electric drivetrain testbed. Finally, the prototype is benchmarked against commercial competitors in the market to establish its economical feasibility.

During the Apollo 10 and 17 missions NASA astronauts reported that they saw streamers emanating from the surface of the moon. They concluded that the streamers were produced by light scattering from dust particles. The particles are believed to be transported by an ambient electric field. This theorized electric field has never been measured directly, although the electric potential on the surface and above it has. The exact behavior and origin of the electric field is unknown, but has been approximated to be between 1 and 12 V/m. To measure this electrical field a new type of instrument, called Multi Plate Field Mills (MPFM) has been developed. This type of instrument is capable of measuring both the amplitude and directionality of the electrical field. Three of these instruments will be mounted on a 1U CubeSat to be lunched with the PTS mission to the moon scheduled to Q4 2019. In this work the MPFM were characterized. The precision of the instrument for electrical fields applied along the z, y and x axis was found to be 0.6, 1.3, 1.4 (V/m)/(Hz)^(1/2) respectively for measurements in air and 0.14, 0.6, 0.6 (V/m)/(Hz)^(1/2) for measurements in vacuum. This sensitivity outperforms the current state of the art Field Mills and, in addition to that, it provides an assessment of the directionality of the electrical field. / Umeå Lunar Venture

This dissertation tested the hypothesis that energy transferred from a plasma or plume can be used to optimize the structure, chemistry, topography, optical and electrical properties of pulsed laser deposited and sputtered thin-films of ZnO, a-BOxNy, and few layer 2H-WS2 for transparent electronics devices fabricated without substrate heating or with low substrate heating. Thus, the approach would be compatible with low-temperature, flexible/bendable substrates. Proof of this concept was demonstrated by first optimizing the processing-structure-properties correlations then showing switching from accumulation to inversion in ITO/a-BOxNy/ZnO and ITO/a-BOxNy/2H-WS2 transparent MIS capacitors fabricated using the stated processes. The growth processes involved the optimization of the individual materials followed by growing the multilayer stacks to form MIS structures. ZnO was selected because of its wide bandgap that is transparent over the visible range, WS2 was selected because in few-layer form it is transparent, and a-BOxNy was used as the gate insulator because of its reported atomic smoothness and low dangling bond concentration. The measured semiconductor-insulator interfacial trap properties fall in the range reported in the literature for SiO2/Si MOS structures. X-ray photoelectron spectroscopy (XPS), Hall, photoluminescence, UV-Vis absorption, and X-ray diffraction (XRD) measurements investigated the low-temperature synthesis of ZnO. All films are nanocrystalline with the (002) XRD planes becoming more prominent in films grown with lower RF power or higher pressure. Low power or high chamber pressure during RF magnetron sputtering resulted in a slower growth rate and lower energetic conditions at the substrate. Stoichiometry improved with RF power. The measurements show a decrease in carrier concentration from 6.9×1019 cm-3 to 1.4×1019 cm-3 as power increased from 40 W to 120 W, and an increase in carrier concentration from 2.6×1019 cm-3 to 8.6×1019 cm-3 as the deposition pressure increased from 3 to 9 mTorr. The data indicates that in the range of conditions used, bonding, stoichiometry, and film formation are governed by energy transfer from the plasma to the growing film. XPS characterizations, electrical measurements, and atomic force microscopy (AFM) measurements reveal an increase in oxygen concentration, improved dielectric breakdown, and improved surface topography in a-BOxNy films as deposition pressure increased. The maximum breakdown strength obtained was ~8 MVcm-1, which is comparable to a-BN. Metal-Insulator-Metal (MIM) structures of a-BOxNy grown at 10 and 15 mTorr suggest a combination of field-enhanced Schottky emission and Frenkel-Poole emission are likely transport mechanisms in a-BOxNy. In comparison, better fitted data was gotten for field enhanced Schottky emission which suggests the more dominant mechanism. The static dielectric constant range is 3.26 – 3.58 for 10 and 15 mTorr films. Spectroscopic ellipsometry and UV-Vis spectroscopy measured a bandgap of 3.9 eV for 15 mTorr grown a-BOxNy. 2H-WS2 films were grown on both quartz and a-BOxNy which revealed that the XRD (002) planes became more prominent as substrate temperature increased to 400 oC. AFM shows nano-grains at lower growth pressure. Increasing the growth pressure to 1 Torr resulted in the formation of larger particles. XPS chemical analysis reveals improved sulfur to tungsten ratios as pressure increased. Sulfur deficient films were n-type, whereas sulfur rich conditions produced p-type films. Frequency dependent C-V and G-V measurements revealed an interface trap concentration (Nit) of 7.3×1010 cm-2 and interface state density (Nss) of 7.5×1012 eV-1cm-2 for the transparent ITO/a-BOxNy/ZnO MIS structures, and approximately 2 V was required to switch the a-BOxNy/ZnO interface from accumulation to inversion. Using 2H-WS2 as the channel material, the ITO/a-BOxNy/2H-WS2 required approximately 4 V to switch from inversion to accumulation in both n and p-channel MIS structures. Interface trap concentrations (Nit) of 1.6×1012 cm-2 and 3.2×1010 cm-2, and interface state densities (Nss) of 1.6×1012 eV-1cm-2 and 6.5×1012 eV-1cm-2 were calculated for n and p-channel 2H-WS2 MIS structures, respectively. The data from these studies validate the hypothesis and demonstrate the potential of ZnO, a-BOxNy, and few layer 2H-WS2 for transparent electronics.

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