A key factor in the vertical integration of optical waveguide devices is the uniformity of the surface across which the coupling takes place. This thesis focuses on the fabrication of annealed proton-exchanged (APE) waveguides vertically integrated with chalcogenide waveguides. While titanium diffused waveguides form a surface bump that is approximately twice the size of the originally deposited film, an annealed proton-exchange process produces waveguides with surfaces having 90% less deformation. The theory behind wave guiding devices is explored in this work along with the modeling and simulation of APE waveguides. The results obtained from the simulations are used to aid in the fabrication of these devices. A detailed review of the fabrication process of APE waveguides and chalcogenide waveguides is provided with results obtained from measurements. The first known coupling results for vertically integrated chalcogenide waveguides on top of annealed proton-exchanged waveguides are recorded. This work is concluded with future directions for this research including lowering losses by obtaining better simulation parameters and vertically integrating ring resonators along with ways in which to do this.

abstract: As photons, electrons, and neutrons traverse a medium, they impart their energy in ways that are analytically difficult to describe. Monte Carlo methods provide valuable insight into understanding this behavior, especially when the radiation source or environment is too complex to simplify. This research investigates simulating various radiation sources using the Monte Carlo N-Particle (MCNP) transport code, characterizing their impact on various materials, and comparing the simulation results to general theory and measurements. A total of five sources were of interest: two photon sources of different incident particle energies (3.83 eV and 1.25 MeV), two electron sources also of different energies (30 keV and 100 keV), and a californium-252 (Cf-252) spontaneous fission neutron source. Lateral and vertical programmable metallization cells (PMCs) were developed by other researchers for exposure to these photon and electron sources, so simplified PMC models were implemented in MCNP to estimate the doses and fluences. Dose rates measured around the neutron source and the predicted maximum activity of activation foils exposed to the neutrons were determined using MCNP and compared to experimental results obtained from gamma-ray spectroscopy. The analytical fluence calculations for the photon and electron cases agreed with MCNP results, and differences are due to MCNP considering particle movements that hand calculations do not. Doses for the photon cases agreed between the analytical and simulated results, while the electron cases differed by a factor of up to 4.8. Physical dose rate measurements taken from the neutron source agreed with MCNP within the 10% tolerance of the measurement device. The activity results had a percent error of up to 50%, which suggests a need to further evaluate the spectroscopy setup. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2014

abstract: Total dose sensing systems (or radiation detection systems) have many applications, ranging from survey monitors used to supervise the generated radioactive waste at nuclear power plants to personal dosimeters which measure the radiation dose accumulated in individuals. This dissertation work will present two different types of novel devices developed at Arizona State University for total dose sensing applications. The first detector technology is a mechanically flexible metal-chalcogenide glass (ChG) based system which is fabricated on low cost substrates and are intended as disposable total dose sensors. Compared to existing commercial technologies, these thin film radiation sensors are simpler in form and function, and cheaper to produce and operate. The sensors measure dose through resistance change and are suitable for applications such as reactor dosimetry, radiation chemistry, and clinical dosimetry. They are ideal for wearable devices due to the lightweight construction, inherent robustness to resist breaking when mechanically stressed, and ability to attach to non-flat objects. Moreover, their performance can be easily controlled by tuning design variables and changing incorporated materials. The second detector technology is a wireless dosimeter intended for remote total dose sensing. They are based on a capacitively loaded folded patch antenna resonating in the range of 3 GHz to 8 GHz for which the load capacitance varies as a function of total dose. The dosimeter does not need power to operate thus enabling its use and implementation in the field without requiring a battery for its read-out. As a result, the dosimeter is suitable for applications such as unattended detection systems destined for covert monitoring of merchandise crossing borders, where nuclear material tracking is a concern. The sensitive element can be any device exhibiting a known variation of capacitance with total ionizing dose. The sensitivity of the dosimeter is related to the capacitance variation of the radiation sensitive device as well as the high frequency system used for reading. Both technologies come with the advantage that they are easy to manufacture with reasonably low cost and sensing can be readily read-out. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2017

Les verres de chalcogénures combinent plusieurs propriétés : une transparence étendue dans l’infrarouge, un indice de réfraction élevé (n>2) et de fortes propriétés non-linéaires. La réalisation de fibres optiques microstructurées (FOMs) permet d’exacerber les effets non-linéaires et notamment en faisant varier les paramètres optogéométriques des fibres (d et Λ). Ainsi, des fibres à propagation monomode peuvent être obtenues ou encore des fibres dont les applications potentielles concernent l’optique active avec la génération d’effets non-linéaires. La réalisation de telles fibres passent par la synthèse de verres de chalcogénures de haute pureté. Par conséquent, les bandes d’absorption limitant la transparence des fibres doivent être identifiées et limitées au maximum. Pour cela, le suivi et la qualification des éléments utilisés lors de la synthèse des verres doivent être entrepris. Un protocole de synthèse et de purification par traitements thermiques a été mis en place en ce sens. La technique pour élaborer les FOMs en verres de chalcogénures est le moulage. Elle consiste à couler un verre dans un moule entièrement réalisé en silice. Ce dernier présente la géométrie inverse de la fibre désirée. Cette méthode permet d’obtenir des géométries variées et reproductibles en passant par des fibres monomodes et multimodes avec des diamètres de cœur allant de 2 μm jusqu’à plus de 20 μm. La réalisation de sources infrarouges a été développée dans le manuscrit. Cela a été rendu possible dans un premier temps par la génération d’un supercontinuum à l’aide d’une fibre à cœur suspendu puis par la réalisation d’un laser à cascade quantique (QCL) couplé à une fibre monomode. De plus, une fibre à maintien de la polarisation (FMP) dans le moyen infrarouge, présentant une biréfringence de groupe de l’ordre de 10-3 a été élaborée grâce à l’évolution du moule de silice. De plus, un coupleur tout-optique, une fibre toute-solide et un faisceau de fibres infrarouges complètent les réalisations obtenues au cours de cette thèse. / Chalcogenide glasses combine several properties : large transparency in the infrared range, a high refractive index (n>2) and strong non-linear properties. The realization of microstructured optical fibers (MOFs) exacerbates non-linear effects more particularly by varying the opto-geometrical parameters of the fibers (d and Λ). Thus, single-mode propagation can be obtained and also generation of non-linear effects. The realization of high purity chalcogenide glasses is needed. In fact, absorption bands limiting the transparency of the fibers must be identified and minimized. For this, monitoring and qualification of components used in the synthesis of glasses should be undertaken. A protocol of synthesis and purification by heat treatment was implemented in this direction. The technique to elaborate MOFs is the casting method. It consists of flowing a glass on a silica mold. The geometry is the negative shape of the desired fiber. This method allows the realization of multimode or single-mode fiber in the 1-10 μm window. The realization of infrared sources was developed in the manuscript. The generation of a supercontinuum with a suspended-core fiber has been presented and also by the realization of a quantum cascade laser (QCL) coupled into a singlemode fiber. In addition, a polarization-maintaining fiber (PMF) having a group birefringence of the order of 10-3 was developed through the evolution of the silica mold. In addition, an optical coupler, an all-solid fiber and an infrared bundle were achieved during this thesis.

En 2010, une nouvelle méthode de production de verres de chalcogénure transparents dans l'infrarouge a été brevetée, alliant la mécanosynthèse au frittage Spark Plasma Sintering. Ce travail de thèse intègre le transfert de technologie vers la société Diafir dans le cadre d'un projet RAPID, financé par la DGA. Il a pour but un travail d'optimisation des procédés de synthèse et de mise en forme a été mené afin de permettre d'adapter cette technologie innovante à un volume industriel. Les verres de composition Ge28Sb12Se60, 80GeSe2-20Ga2Se3, Te20As30Se50, As2Se3 et As2S3 ont été synthétisés par fusion-trempe, broyés finement puis frittés par SPS. Des disques avec des transmissions comparables au verre obtenu par voie classique ont été obtenus. Des traitements antireflets ont été déposés avec succès à leur surface. Le développement de moules spécifiques au SPS a conduit à la production de lentilles sphériques adaptables à des dispositifs optiques. Ces compositions vitreuses ont ensuite été synthétisées par mécanosynthèse puis frittées par SPS. Les disques obtenus présentant des phénomènes de diffusion récurrents. Les principales causes de diffusion ont été analysées afin d'optimiser le procédé de synthèse par voie mécanique. / In 2010, a new method of production of chalcogenide glasses, transparent in the infrared, has been patented. It combines mechanosynthesis to Spark Plasma Sintering. In this thesis work, there is the technology transfer to the Diafir society included in the RAPID project, founded by the DGA. The aim is to optimize the processes of synthesis and forming in order to adapt this innovating technology to an industrial scale. The glasses of composition Ge28Sb12Se60, 80GeSe2-20Ga2Se3, Te20As30Se50, As2Se3 and As2S3 have been synthetized by melt-quench method then crushedfinely before to be sintered by SPS.

No description available.

Chalcogenide glasses are highly nonlinear optical materials which can be used for fabricating active and passive photonic devices. This thesis work deals with the fabrication of buried, three dimensional, channel waveguides in chalcogenide glasses, using ultrafast laser inscription technique. The femtosecond laser pulses are focused into rare earth ions doped and undoped chalcogenide glasses, few hundred microns below from the surface to modify the physical properties such as refractive index, density, etc. These changes are made use in the fabrication of active and passive photonic waveguides which have applications in integrated optics. The first chapter provides an introduction to the fundamental aspects of femtosecond laser inscription, laser interaction with matter and chalcogenide glasses for photonic applications. The advantages and applications of chalcogenide glasses are also described. Motivation and overview of the present thesis work have been discussed at the end. The methods of chalcogenide glass preparation, waveguide fabrication and characterization of the glasses investigated are described in the second chapter. Also, the details of the experiments undertaken, namely, loss (passive insertion loss) and gain measurements (active) and nanoindentation studies are outlined. Chapter three presents a study on the effect of net fluence on waveguide formation. A heat diffusion model has been used to solve the waveguide cross-section. The waveguide formation in GeGaS chalcogenide glasses using the ultrafast laser, has been analyzed in the light of a finite element thermal diffusion model. The relation between the net fluence and waveguide cross section diameter has been verified using the experimentally measured properties and theoretically predicted values. Chapter four presents a study on waveguide fabrication on Er doped Chalcogenide glass. The active and passive characterization is done and the optimal waveguide fabrication parameters are given, along with gain properties for Er doped GeGaS glass. A C-band waveguide amplifier has been demonstrated on Chalcogenide glasses using ultrafast laser inscription technique. A study on the mechanical properties of the waveguide, undertaken using the nanoindentation technique, is presented in the fifth chapter. This work brings out the close relation between the change in mechanical properties such as elastic modulus and hardness of the material under the irradiation of ultrafast laser after the waveguide formation. Also, a threshold value of the modulus and hardness for characterizing the modes of the waveguide is suggested. Finally, the chapter six provides a summary of work undertaken and also discusses the future work to be carried out.

The ability to tune the properties over a wide range of values by changing the additives, composition, etc., has made chalcogenide glassy semiconductors, most interesting from both fundamental physics as well as technology point of view. In particular, the occurrence of the two network topological thresholds namely the Rigidity Percolation Threshold (RPT) and the Chemical Threshold (CT) and their influence on various properties of chalcogenide glasses have been of immense interest during the last three decades. The Rigidity Percolation Threshold (also known as the Stiffness Threshold or Mechanical Threshold) corresponds to the composition at which the material transforms from a floppy polymeric glass to a rigid amorphous solid, whereas at Chemical Threshold the sample tends towards an ordered state. Though the rigidity percolation has been considered for long to occur at a critical threshold defined by the constraint’s theory, the recent theoretical and experimental investigations have found the RPT to occur over a range of compositions. In systems exhibiting an extended rigidity percolation, two distinct transitions namely from a floppy to an isostatically rigid phase and from an isostatically rigid to a stressed rigid phase are seen. In the category of chalcogenide glasses, tellurides have been found to exhibit interesting properties including the phenomenon of electrical switching which finds applications in Phase Change Memories (PCM). Studies on various thermal, electrical and photoelectrical properties of glassy tellurides help us in identifying suitable materials for different technological applications. This thesis deals with Differential Scanning Calorimetric (DSC) & Temperature Modulated Alternating Differential Scanning Calorimetric (ADSC) studies, electrical switching investigations, photoconductivity & photothermal measurements on certain metal doped telluride glasses. The composition dependence of properties such as glass transition & crystallization temperatures, switching voltage, thermal diffusivity, photosensitivity, etc., have been analyzed to obtain information about topological thresholds, thermally reversing window, etc. The first chapter of thesis provides an overview of properties of amorphous semiconductors, in particular chalcogenide glasses. The local & defect structure, the electronic band structure & electrical properties, electrical switching behavior, etc., are discussed in detail. The theoretical aspects related to the experiments undertaken in this thesis work have also been described. The instrumentation used for various experiments conducted to measure thermal, electrical, photoelectrical and photothermal properties have been discussed in chapter two. The chapter three deals with the photocurrent measurements on As40Te60-xInx (7.5 ≤ x ≤ 16.5) glasses. In these samples, it has been found that the photocurrent increases with illumination, which is understood on the basis of the large dielectric constant and also due to the presence of a large number of positively charged defect states. Further, the composition dependence of the conductivity activation energy and the photosensitivity exhibit a maximum at x = 12.5 (<r> = 2.65) and a minimum at x = 15.0 (<r> = 2.70) which has been identified to be the Rigidity Percolation Threshold (RPT) and the Chemical Threshold (CT) respectively. The results of electrical switching, DSC and Photothermal Deflection (PTD) studies on As20Te80-xGax (7.5 ≤ x ≤ 18.5) glasses, undertaken to elucidate the network topological thresholds, are described in chapter four. It has been found that all the As20Te80-xGax glasses studied exhibit memory type electrical switching. The switching voltage (VT) of these glasses increases monotonically with x, in the composition range 7.5 ≤ x ≤ 15.0. The increase in VT with gallium addition leads to a local maximum at x = 15.0 and VT decreases with x thereafter, reaching a distinct minimum at x = 17.5. Based on the variation with composition of the electrical switching voltages, the composition x = 15.0 and x = 17.5 have been identified to be the rigidity percolation and chemical thresholds of the As20Te80-xGax glassy system respectively. Further, the DSC studies indicate that As20Te80-xGax glasses exhibit a single glass transition (Tg) and two crystallization reactions (Tc1 & Tc2) upon heating. There is no appreciable change in Tg of As20Te80-xGax glasses with the addition of upto about10 atom% of Ga, whereas a continuous increase is seen in the crystallization temperature (Tc1). It is interesting to note that both Tg and Tc1 exhibit a maximum at x = 15.0 and a minimum at x = 17.5, the compositions identified to be the RPT and CT respectively by the switching experiments. The composition dependence of thermal diffusivity estimated from the PTD signal, indicate the occurrence of an extended stiffness transition in As20Te80-xGax glasses, with the compositions x = 9.0 and x = 15.0 being the onset and the completion of an extended rigidity percolation. A maximum and a minimum are seen in the thermal diffusivity respectively at these compositions. Further, a second maximum is seen in the thermal diffusivity of As20Te80-xGax glasses, the Chemical Threshold (CT) of the glassy system. The fifth chapter of the thesis describes the ADSC, electrical switching and photocurrent measurements on Ge15Te85-xInx (1 ≤ x ≤ 11) glasses. It is found there is not much change in the Tg of Ge15Te85-xInx glasses in the composition range 1 ≤ x ≤ 3. An increase is seen in Tg beyond x = 3, which continues until x = 11. Further, the composition dependence of non-reversing enthalpy shows the presence of a thermally reversing window in the compositions range x = 3 and x = 7. Electrical switching studies indicate that Ge15Te85-xInx glasses exhibit threshold type of switching at input currents below 2 mA. It is observed that switching voltages decrease initially with indium addition, exhibiting a minimum at x = 3, the onset of the extended rigidity percolation as revealed by ADSC. An increase is seen in VT above x = 3, which proceeds till x = 8, with a change in slope (lower to higher) seen around 7 atom% of indium which corresponds to the completion of the stiffness transition. The reversal in trend exhibited in the variation of VT at x = 8, leads to a well defined minimum around x = 9, the chemical threshold of the Ge15Te85-xInx glassy system. Photocurrent measurements indicate that there is no photodegradation in Ge15Te85-xInx glasses with x < 3, whereas samples with x ≥ 3 show photodegradation behavior. The composition dependent variation in the glass transition temperature has been attributed for this behavior. Further, the composition dependence of photo sensitivity has been found to show the signatures of the extended rigidity percolation and the chemical threshold in Ge15Te85-xInx glasses. The last chapter of thesis (chapter six) summarizes the results obtained and also the scope of future work to be undertaken.

Fe chalcogenides : The discovery of superconductivity in Fe based compounds trig- gered an intense research activity in this field with significant importance given to material synthesis. As a result, numerous materials falling into four major classes and sharing similarities in physical properties were synthesized and investigated. In spite of subtle differences, all of them share many common features like crystal symmetry, magnetic ground state, close resemblance in phase diagram etc. Fe super- conductors are broadly classified into Fe pnictides (with Fe − pnictogen layer) and Fe chalcogenides (with Fe − chalcogen layer) in which the binary Fe chalcogenides possess the simplest crystal structure. The distinct magnetic and superconducting properties make them interesting candidates for research. Detailed study on such systems demand high quality single crystals. This thesis discusses single crystal growth and properties of Fe1+yTe1−xSex. Struc- tural, magnetic, superconducting and thermal properties of pristine and substituted compounds are explored. A characteristic feature associated with binary chalco- genides is the presence of excess Fe in the interstitial sites represented by y in the chemical formula. By fine tuning the composition, the effect of interstitial Fe on various physical properties can be analyzed. The current work deals with the influence of interstitial excess Fe on the structural, magnetic and superconducting properties of the parent compound Fe1+yTe and Se substituted Fe1+yTe1−xSex. The results are organized into eight chapters; an outline of each chapter is given below. Chapter 1 gives an introduction to the broad field of Fe superconductors. A de- tailed literature review providing comparison of Fe pnictides with chalcogenides is included. The background of the current work is discussed with reference to the im- portant aspects of crystal structure and its relation to the ordered ground states. An overview of the important theories on magnetic ordering and superconducting pair- ing is provided. In the later part, a generic phase diagram along with the individual phase diagrams of important systems are discussed. This is followed by a discus- sion of the characteristic properties of iron chalcogenides and different methods of bulk synthesis. The chapter is concluded with a note on the motivation behind the present work. Chapter 2 discusses the crystal growth techniques and experimental methods used in the present work. The basic working principles are briefly explained. Chapter 3 provides a detailed discussion of the single crystal growth procedure, its customization and basic characterization. Single crystals of all compositions un- der discussion are grown by a modified horizontal Bridgman method. Material preparation, growth parameters and overall temperature profile of crystal growth process are described. Single crystalline nature of the as-grown crystals is con- firmed with Laue scattering technique. All crystals show tetragonal symmetry at room temperature. The approximate crystal orientation is deduced by indexing the X-ray diffraction pattern of the cleaved crystals. The diffraction patterns exhibit a set of (00l) peaks. A detailed composition analysis is performed on the samples. The sample properties are very sensitive to composition and careful estimation is per- formed by conducting repeated measurements at multiple points on the samples under study. Chapter 4 deals with superconducting and magnetic properties of Fe1+yTe0.5Se0.5. Single crystals of two different Fe concentration, y=0.04 and 0.09 are grown in which the concentration of Se and Te are maintained close to 0.5. Among binary Fe chalcogenides, half substituted iron telluride shows the highest TC (15 K) at ambient pressure. Accordingly, this composition is chosen to evaluate the role of Fe concentration in modulating the superconducting behavior. Two different batches of both the samples are grown, one set containing small amounts of impurity phases and the other, representing a pure primary phase. Resistivity measurements performed on both compositions, y=0.04 and 0.09, show onset of superconductivity near 15 K. In the normal state above TC, the temperature derivative of resistivity dρ/dT changes from positive to negative as the excess Fe concentration rises. At higher Fe concentrations, a log 1/T divergence is discernible in the normal state. The contribution of interstitial Fe to superconductivity has been analyzed using magnetization measurement techniques. An increase in the width of superconducting transition is seen in all measurements as the Fe content increases. The superconducting volume fraction estimated from susceptibility data demonstrates that high concentration of Fe is not favorable to superconductivity. The upper and lower critical field are esti- mated from electric resistivity data (in applied magnetic field) and magnetization isotherms respectively. Comparison of the lower critical field between two compo- sitions strengthens the argument that higher excess Fe leads to suppression of super- conductivity. The second set of crystals with impurity phases reveals an anomalous magnetization peak near 125 K. The results from resistivity, DC magnetization and ac susceptibility are compared. Chapter 5 addresses the influence of excess Fe on the ordered ground state. The antiferromagnetic parent compound, Fe1+yTe single crystals, are also grown using the same procedure. It is proposed that excess Fe occupying the interstitial sites possess local moments which could interact with the magnetic phases. In an at- tempt to understand their magnetic properties in detail, single crystals are grown with y=0.06, 0.09, 0.11, 0.12, 0.13 and 0.15. Fe1+yTe undergoes magnetostructural transition at TN=67 K. As the concentration of Fe varies from 0.06 to 0.13, a marked suppression of TN occurs from 67 K to 56 K. Moreover, a single first order transi- tion is seen to split into two at the critical concentration, y=0.12. The derivative plot of magnetization and specific heat data clearly illustrate two well-separated peaks. The two transitions are denoted as TN=57 K and TS=46 K. TN here is identified as a second order transition and TS as a first order transition. The second order transi- tion is evident from the λ-like nature of the peak in the specific heat measurement. The first order transition is associated with a large thermal hysteresis in the heat- ing and cooling cycle. Raw data from the heat capacity calorimeter gives a clear hint towards the first order nature of TS. As the composition of Fe rises further, the multiple transitions subside and disappear. For higher concentration, y=0.15, a sin- gle continuous phase transition is observed. Impurity free, pure phase is noticed in most of the samples as evident in powder X-ray diffraction and bulk magneti- zation measurements. The thermal data of various compositions are analyzed and compared. Electrical resistivity data clearly reveals the shift in phase transition and the presence of multiple transitions. Unlike Fe1+yTe1−xSex, all compositions here display similar behavior above TN, irrespective of the concentration of excess Fe. Chapter 6 devotes special emphasis to the evolution of structural and magnetic properties of the critical composition, Fe1.12Te where multiple transitions are ob- served. The low temperature structure of the crystal is studied in detail using syn- chrotron powder X-ray diffraction. The data in the vicinity of the two transitions, TN and TS are carefully analyzed. The room temperature crystal structure belongs to tetragonal symmetry with P4/nmm space group, where it is paramagnetic. As the sample is cooled to just below TN, a magnetostructural transition occurs from tetragonal to orthorhombic space group Pmmn. Below TN, the XRD pattern of the tetragonal (200) peak splits into (200) and (020) representing an orthorhombic distortion. The second transition is observed at TS where the orthorhombic struc- ture undergoes a monoclinic distortion, to P21/m. Below TS, a mixed phase of or thorhombic and monoclinic structures are present. The powder diffraction studies are supplemented with thermodynamic measurements. From specific heat analy- sis, the different contributions and the change in entropy across the transitions are estimated. Linear thermal expansion study has confirmed the two structural transi- tions. The changes occurring in lattice parameters, bond distances, bond angles and unit cell volume as a function of temperature are calculated using powder pattern refinement. Synchrotron data, linear thermal expansion and thermodynamic mea- surement results all point to strong magnetostructural coupling in this material. A temperature-composition phase diagram is formulated using results obtained from different Fe compositions. Transition temperature is plotted as a function of excess Fe content, highlighting its role in determining the structural and magnetic phases in Fe1+yTe. Chapter 7 deals with the magnetic and superconducting properties of Se substi- tuted Fe1+yTe1−xSex. Single crystals are grown by carefully varying the concen- tration of Se from x=0.02 to 0.25 while keeping the nominal composition of excess Fe more or less same. In this work, focus is given to Fe-rich, selenium substituted compositions. The intention is to explore how Se substitution affects the multiple transitions observed in Fe1.12Te. At 2% Se substitution, the split peaks are evident with a slight shift in temperature. The temperature interval between the two tran- sitions decreases in comparison to the pristine compound. For further increases in Se concentration, instead of two well separated peaks, a weak broad hump is ob- served. For compositions with x >0.10, long range magnetic ordering is suppressed. As x increases above 0.15 the electrical resistivity drops indicating the onset of su- perconductivity. However, in the composition range 0.15 ≤ x ≤ 0.25, neither long range magnetic order nor bulk superconductivity is present. Alternately, weak magnetic transitions above the superconducting transition are visible. The transport and magnetic properties are similar to that observed in Fe1.09Te0.5Se0.5. By tuning the Se composition in Fe-rich samples, the magnetic and structural transitions, originally seen in the parent compound are suppressed. The emergence of superconductivity is also discussed. The last section of the chapter provides the modified phase diagram as a function of Se concentration, combining all compositions discussed in the thesis. This gives a detailed description of Fe chalcogenides in the composition range, x=0 to 0.5 with special emphasis on Fe rich samples. The different regions in the phases diagram describe the peculiar properties of Fe chalcogenides. Chapter 8 concludes the thesis with general conclusions pertaining to various observations made in the different chapters. Prospects for future work are briefly outlined.

The growing speed and bandwidth requirements of telecommunication systems demand all-optical on-chip solutions. Microphotonic devices can deliver low power nonlinear signal processing solutions. This thesis looks at the slow light photonic crystals in chalcogenide glasses to enhance low power nonlinear operation. I demonstrate the development of new fabrication techniques for this delicate class of materials. Both, reactive ion etching and chemically assisted ion beam etching are investigated for high quality photonic crystal fabrication. A new resist-removal technique was developed for the chemical, mechanical and light sensitive thin films. I have developed a membraning method based on vapor phase etching in combination with the development of a save and economical etching tool that can be used for a variety of vapour phase processes. Dispersion engineered slow light photonic crystals in Ge₃₃As₁₂Se₅₅ are designed and fabricated. The demonstration of low losses down to 21±8dB/cm is a prerequisite for the successful demonstration of dispersion engineered slow light waveguides up to a group index of around n[subscript(g)] ≈ 40. The slow light waveguides are used to demonstrate highly efficient third harmonic generation and the first advantages of a pure chalcogenide system over the commonly used silicon. Ge₁₁.₅As₂₄24Se₆₄.₅ is used for the fabrication of photonic crystal cavities. Quality factors of up to 13000 are demonstrated. The low nonlinear losses have enabled the demonstration of second and third harmonic generation in those cavities with powers up to twice as high as possible in silicon. A computationally efficient model for designing coupled resonator bandpass filters is used to design bandpass filters. Single ring resonators are fabricated using a novel method to define the circular shape of the rings to improve the fabrication quality. The spectral responses of the ring resonators are used to determine the coupling coefficient needed for the design and fabrication of the bandpass filters. A flat top bandpass filter is fabricated and characterized as demonstration of this method. A passive all-optical regenerator is proposed, by integrating a slow-light photonic crystal waveguide with a band-pass filter based on coupled ring resonators. A route of designing the regenerator is proposed by first using the dispersion engineering results for nonlinear pulse propagation and then using the filter responses to calculate the nonlinear transfer function.