Le but de ce travail de thèse consiste à étudier les propriétés physico-chimiques des verres chalcogénures afin de pouvoir les utiliser comme membranes de capteurs chimiques destinés pour le dosage des ions Hg²⁺. Dans un premier temps, les propriétés macroscopiques des systèmes vitreux AgY-As₂S₃ (Y = Br, I), HgS-GeS₂, AgI-HgS-As₂S₃ et AgI-HgS-GeS₂, telles que les densités et les températures caractéristiques (Tg et Tc) ont été mesurées et analysées selon les compositions des verres. Puis, dans un second temps, les propriétés de transport ont été étudiés à l'aide de la spectroscopie d'impédance complexe d'une part, ou d'autre part, par des mesures de la résistivité. Ces dernières montrent que les verres de chalcogénures dopés à l'halogénure d'argent présentent deux différents régimes de transports au-dessus du seuil de percolation xc ≈ 30 ppm : (i) domaine de percolation critique, et (ii) domaine contrôlé par modificateur. Vient ensuite la troisième partie, elle consiste à déchiffrer les relations composition/structure/propriété grâce à plusieurs études structurales. Des mesures par spectroscopie Raman, par diffraction de neutrons et de rayons X haute énergie, par diffusion des neutrons sous petits angles (SANS), ainsi que des modélisations RMC/DFT et AMID ont été réalisées. Enfin, la dernière partie de ce travail était une étude préliminaire des caractéristiques des nouveaux capteurs chimiques. Il a été consacré à l'étude des relations entre la composition et la sensibilité des membranes ainsi qu'aux limites de détection qui les définissent. / The aim of the thesis is to study the physicochemical properties of the silver halide doped chalcogenide glasses for the possibility to use them as chemical sensors for quantitative analysis of Hg²⁺ ions. First, the macroscopic properties of AgY-As₂S₃ (Y = Br, I), HgS-GeS₂, AgI-HgS-As₂S₃ and AgI-HgS-GeS₂ glassy systems such as the densities and the characteristic temperatures (Tg and Tc) were measured and analyzed according to the glass compositions. Second, the transport properties were studied using complex impedance and dc conductivity. Measurements show that the silver halide doped chalcogenide glasses exhibit two drastically different ion transport regimes above the percolation threshold at xc ≈ 30 ppm : (i) critical percolation, and (ii) modifier-controlled regimes. Third, to unveil the composition/structure/property relationships, various structural studies were carried out. Raman spectroscopy, high-energy X-ray diffraction, neutron diffraction and small-angle neutron scattering experiments, together with RMC/DFT and AMID modelling were employed. Finally, the last part was a preliminary study of the characteristics of new chemical sensors. It was devoted to study the relationship between the membranes' composition and sensitivity but also detection limits.

L'objectif de ce travail a consisté à identifier des polluants émergents dans des eaux usées issues de stations d'épuration ainsi que dans le milieu naturel et à proposer une méthode de remédiation et un suivi de ces polluants. Dans un premier temps, nous avons identifié les polluants organiques contenus dans les échantillons d'eaux usées et issues du milieu naturel par chromatographie en phase liquide ou gazeuse couplée à une spectrométrie de masse, chromatographie en phase gazeuse par espace de tête statique et par spectrométrie par torche à plasma couplée à une spectrométrie de masse. Différents polluants ont été trouvés tels que les phtalates, des substances médicamenteuses, le cholestérol et des éléments de traces métalliques. Dans le but de piéger ces polluants, différents polymères de cyclodextrine (CD) solubles et insolubles dans l'eau ont été synthétisés et leurs capacités d'adsorption ont été évaluées. Après adsorption sur les polymères de CD, nous avons observé une diminution de la teneur en carbone organique total (COT) de l'effluent. Ces polymères se sont révélés être des adsorbants efficaces. Dans un second temps, des verres du système pseudo-ternaire Agl-HgS-As₂S₃ ont été synthétisés en ajoutant le composé le composé Agl dans le système pseudo-binaire HgS-As₂S₃. Ces verres de chalcogénures sont des membranes ionosélectives permettant de détecter les ions Hg²⁺ dans les effluents. Tout d'abord, nous avons défini le domaine vitreux des verres à l'aide de la diffraction des rayons X, ensuite les propriétés macroscopiques des verres ont été déterminées. Ainsi, les propriétés de transport ont été étudiées à l'aide de la spectroscopie d'impédance complexe montrant que l'ajout d'Agl dans le verre pseudo-binaire HgS-As₂S₃ provoque une augmentation de la conductivité ionique. Afin de comprendre ce phénomène, diverses études structurales ont été déployées par spectroscopie Raman, diffraction de neutrons et de rayon X haute énergie. Ces techniques ont montré que l'évolution de la conductivité ionique est dépendante de la structure du verre qui forme des chemins préférentiels de conduction. Enfin, différents capteurs avec différentes compositions sont testés afin de définir la sensibilité, la limite de détection et les coefficients de sélectivité en présence d'ions interférents. / The aim of this work was to identify the emerging pollutants in the effluents of wastewater treatment plants as well as in the natural environment, and to propose a method of remediation and monitoring of these pollutants. In the first part of the thesis, we have identified the organic pollutants contained in the wastewater samples using (i) gas and/or liquid chromatography coupled with a mass spectrometry, (ii) static-headspace gas chromatography, and (iii) inductively coupled plasma atomic emission spectroscopy. Different pollutants were found such as phthalates, drugs, cholesterol, and heavy metal traces. In order to trap these pollutants, various water soluble/insoluble cyclodextrin β-CD polymers have been synthesized and their adsorption capacities were evaluated. After the analysis of the effluent samples, we observed a decrease of the Total Organic Carbon (TOC). This decrease was attributed to the adsorption of pollutant by CD polymers which have proven to be effective adsorbents. The second part of the thesis included two main sub-parts : (i) a synthesis and characterization part and (ii) an application part. In the first sub-part, chalcogenide glasses in the pseudo-ternary Agl-HgS-As₂S₃ system have been synthesized by adding silver iodide "Agl" to the quasi-binary HgS-As₂S₃ system. The vitreous domain and the macroscopic properties of glass samples were determined. Electrical conductivity of glasses was studied using both the complex impedance spectroscopy and resistivity measurements ; it was found that adding Agl to the quasi-binary HgS-As₂S₃ alloy causes an increase in the ionic conductivity. Structural studies, using various techniques as Raman spectroscopy, neutron scattering and high-energy X-ray diffraction, have been performed in order to decipher the relation between both structural and transport properties in these glasses. In the second sub-part, the obtained glasses in the ternary system were used as membranes in chemical sensors dedicated to mercury detection in aqueous solution. As a result, various sensors with different compositions were tested to determine their corresponding sensitivity, detection limit and selectivity coefficients in the presence of interfering ions.

The Science behind amorphous Chalcogenide materials opened up new technologies in the arena of Phase Change Memories. The Ovonic universal phase change memory is called universal because it can replace flash memory, DRAM and SRAM. These are not only basic computer memory devices but also are becoming the driving force for the ongoing revolutionary growth of cell phones and other mobile devices, which are in desperate need of memory providing higher density, faster speed and lower power consumption. In this thesis, compositional dependence of various properties of different chalcogenide glasses are investigated, to explore the possibility of their application in Phase Change Memories. Efforts are also made to understand the effect of rigidity and extended rigidity transition on the composition dependence of properties investigated. This thesis comprises of 9 chapters; a brief summary is given below. Chapter 1 deals with fundamental aspects of amorphous semiconductors with a particular reference to chalcogenide glasses. The advantages and applications of chalcogenide glasses are also described. Chapter 2 outlines preparation and characterization of the glasses investigated. The sample preparation and various experimental setup used in the present thesis work like Raman Scattering, Nanoindentation, Alternating Differential Scanning Calorimetry (ADSC), Photo-thermal Deflection Spectroscopy (PDS), Electrical Switching are summarized here. Chapter 3 deals with Micro-Raman studies in Ge15Te85-x Inx Glasses. Micro-Raman studies reveal that as-quenched Ge15Te85-xInx samples exhibit two prominent peaks, at 123 and 155 cm-1. In thermally annealed samples, the peaks at 120 cm-1 and 140 cm-1, which are due to crystalline Te, emerge as the strongest peaks. The Raman spectra of polished samples are similar to those of annealed samples, with strong peaks at 123 cm-1 and 141 cm-1. The spectra of lightly polished samples outside the thermally reversing window resemble those of thermally annealed samples; however, the spectra of glasses with compositions in the thermally reversing window resemble those of as-quenched samples. This observation confirms the earlier idea that compositions in the thermally reversing window are non-ageing and are more stable. Chapter 4 explains nanoindentation studies undertaken on Ge15Te85-xInx glasse (1 ≤ x ≤ 11). Nanoindentation studies on Ge15Te85-xInx glasses indicate that the hardness and elastic modulus of these glasses increase with indium concentration. While a pronounced plateau is seen in the elastic modulus in the composition range 3 ≤ x ≤ 7, the hardness exhibits a change in slope at compositions x = 3 and x = 7. Also, the density exhibits a broad maximum in this composition range. The observed changes in the mechanical properties and density are clearly associated with the thermally reversing window in Ge15Te85-xInx glasses in the composition range 3 ≤ x ≤ 7. In addition, a local minimum is seen in density and hardness around x = 9, the chemical threshold of the system. Chapter 5 deals with crystallization kinetics of Ge15Te85-xInx glasses. The crystallization kinetics of Ge15Te85Inx glasses have been studied by non-isothermal method. The composition dependence of Tg and Tc at different heating rates, is investigated. The activation energy of crystallization is calculated using the Kissinger’s plot. It is found that the composition dependence of the glass transition temperature, Tg and the crystallization temperature, Tc, the activation energy of crystallization, Ec, and the stability factor, (ΔT= Tc-Tg) exhibit specific signatures of intermediate phase in the composition rang 3 ≤ x ≤ 7 and Chemical Threshold at x = 9. Chapter 6 explains Alternating Differential Scanning Calorimetric and XRD studies on silver doped Ge15Te80In5 glasses. X-ray diffraction studies on quaternary Ge15Te80-xIn5Agx glasses (2 ≤ x ≤ 24) reveal the presence of Te, GeTe, Ag8GeTe6, AgTe, In2Te3 and In4Te3. Thermal studies on quaternary Ge15Te80-xIn5Agx glasses exhibit signatures of Intermediate Phase (IP) in the variation of Tg, ∆HNR and ∆Cp with Ag addition in the composition range 8 ≤ x ≤ 16. The composition x = 16 has been identified to be the Chemical Threshold (CT) based on the saturation of flexible Ag-Te bonds. Micro-Raman, molar volume, thermal diffusivity studies on Ge15Te80-xIn5Agx glasses reveal a clear evidence of intermediate phase in the composition range 8 ≤ x ≤ 16 as depicted in the ADSC studies. Chapter 7 deals with Micro-Raman studies on as-quenched Ge15Te80-xIn5Agx glasses reveal the presence of tetrahedral structural units. Further, the Raman peak positions are found to shift with silver addition. In addition, specific signatures of the Intermediate Phase (IP) are observed in the composition dependence of Raman frequencies and corresponding intensities of different modes in the composition range, 8 ≤ x ≤ 16. In thermally annealed samples, the observed Raman peaks can be attributed to crystalline tellurium and silver lattice vibrational modes; significant increase in intensity is observed at 93 and 141cm-1 with silver addition in annealed samples, suggesting an increase in silver lattice vibrational modes. Also, the compositional dependence of density, molar volume and thermal diffusivity confirms the presence of the intermediate phase. Chapter 8 contains the current-voltage characteristics and electrical switching behavior of Ge15Te80-xIn5Agx glasses. The glasses are found to exhibit memory type switching for 3mA current in the voltage range 70 -120 V, for a sample thickness 0.3 mm. But when the current is lowered to 1mA the samples exhibit threshold switching. The compositional studies indicate the presence of an intermediate phase in the composition range 8 ≤ x ≤ 16. SET-RESET studies have been carried out using a triangular pulse of 6 mA amplitude for SET and 21 mA amplitude for RESET for a sample thickness 0.3 mm. Raman studies on SET and RESET indicates SET state resemble annealed samples and RESET state resemble as-quenched samples. It is interesting to note that the samples in the intermediate phase, especially compositions at x =10, 12, 14 withstand more set-reset cycles. This indicates compositions in the intermediate phase are suitable for PCM devices. Chapter 9 summarizes the significant results obtained and explains the scope of this thesis.

<p>Predmet istraživanja ove doktorske disertacije su bila halkogenidna stakla iz sistema Ag_x(As₄₀S₃₀Se₃₀)_100&ndash;x (x = 0, 0.5, 1, 2, 3, 4, 5, 10, 12, 13, 15 at. % Ag) &ndash; 3D forma i tanki filmovi preparirani iz prethodno sintetisanih stakala (x &le; 5 at. % Ag) &ndash; 2D forma.<br />Utvrđena je oblasti amorfnosti u faznom dijagramu po odabranom preseku.&nbsp; Ispitivan je uticaj procentualnog udela srebra&nbsp; na&nbsp; fizičke&nbsp; karakteristike sintetisanih stakala i prepariranih tankih filmova koje su&nbsp; od&nbsp; značaja&nbsp; za&nbsp; primenu&nbsp; ovakvih&nbsp; materijala.<br />Izvr&scaron;ena je karakterizacija električnih,&nbsp; optičkih, strukturnih&nbsp; i&nbsp; termičkih&nbsp; osobina&nbsp; na&nbsp; osnovu&nbsp; kojih&nbsp; su izvedeni&nbsp; zaključci&nbsp; o&nbsp; uticaju&nbsp; i&nbsp; modifikaciji&nbsp; strukture As₄₀S₃₀Se₃₀halkogenidne matrice usled inkorporacije atoma srebra. Strukturna analiza ispitivanih sastava je potvrdila homogenost uzoraka sa manjom koncentracijom srebra (x &le; 5 at. %&nbsp; Ag), dok je&nbsp; kod uzoraka sa većim procentualnim udelom ovog metala (x = 10, 13, 15 at. % Ag) pokazano da postoji fazna separacija. Kod sastava sa x = 13 i 15 at. % Ag potvrđena&nbsp; je&nbsp; prisutnost kristalnih centara AgAsSe_2. Na osnovu rezultata dobijenih DSC tehnikom, pokazano je da pri zagrevanju balk uzoraka dolazi do delimične kristalizacije koja se odvija zapreminski sa dvodimenzionalnim&nbsp; i&nbsp; trodimenzionalnim rastomkristalnih centara. Optička i spektralna ispitivanja su pokazala&nbsp; da uvođenje&nbsp; Ag&nbsp; u&nbsp; matricu&nbsp; stakla As₄₀S₃₀Se₃₀&nbsp; dovodi&nbsp; do&nbsp; smanjenja&nbsp; &scaron;irine&nbsp; optički zabranjene zone i kod 3D i 2D uzoraka, kao i da svi sastavi ispoljavaju normalan oblik disperzije indeksa prelamanja. Takođe, rezultati Raman&nbsp; spektroskopije su ukazali&nbsp; na&nbsp; činjenicu&nbsp; da&nbsp; inkorporacija&nbsp; srebra&nbsp; u strukturnu&nbsp; mrežu&nbsp; ispitivanih&nbsp; stakala&nbsp; utiče&nbsp; na formiranje Ag&ndash;(S,Se)&ndash;As veza, odnosno uzrokuje formiranje novih strukturnih jedinica koje bi mogle uticati na provodljivost ovih sastava.&nbsp; Merenja električnih karakteristika 3D uzoraka izvr&scaron;ena su u jednosmernom i naizmeničnom režimu i pokazano je da&nbsp; koncentracija&nbsp; srebra&nbsp; ima&nbsp; značajan&nbsp; uticaj&nbsp; na električne&nbsp; osobine.&nbsp; Utvrđeni&nbsp; su&nbsp; različiti&nbsp; mehanizmi odgovorni za transport&nbsp; nosilaca naelektrisanja zavisno od&nbsp; koncentracije dopanta.&nbsp; Kompleksni impedansni spektri svih sastava&nbsp; su&nbsp; ukazali&nbsp; na prisustvo temperaturske zavisnosti procesa relaksacije, na ne idealan Debye&ndash;vski tip relaksacije, kao i negativni temperaturski koeficijent otpornosti koji je karakterističan za poluprovodnike.</p> / <p>The subject of this dissertation are chalcogenide&nbsp; glasses from the system Agx(As₄₀S₃₀Se₃₀)_100&ndash;x (x = 0, 0.5, 1, 2, 3, 4, 5, 10, 12, 13, 15 at. % Ag) &ndash; 3D form and thin films prepared from previously synthesised&nbsp; glasses (x &le; 5 at. % Ag) &ndash; 2D form. The amorphous&nbsp; area in the phase diagram was determined by the&nbsp; selected&nbsp;&nbsp;&nbsp; tie&ndash; line. The influence of the silver&nbsp; percentage on the physical characteristics of the&nbsp; synthesized glasses and prepared thin films was&nbsp; investigated due to the importance of such materials&nbsp; for the application. Characterization of electrical, optical, structural and thermal properties has been performed, based on which conclusions on theinfluence and structure modification of the As₄₀S₃₀Se₃₀&nbsp; chalcogenide&nbsp; matrix due to the&nbsp; incorporation of silver atoms have been derived. Structural analysis of the investigated samples confirmed the homogeneity of samples with a lower silver concentration (x&nbsp; &le;&nbsp; 5&nbsp; at.%&nbsp; Ag),&nbsp; while&nbsp; in samples with a higher percentage content of&nbsp; this metal (x = 10, 13, 15 at.% Ag) it was shown that&nbsp; there was a phase separation. The presence of crystal&nbsp; centers AgAsSe₂ was confirmed in the samples with x = 13 and 15 at. % Ag. Based on the results obtained with the DSC technique, it has been shown that by heating the samples, partial crystallization takes place voluminously, with two&ndash;dimensional and three&ndash;dimensional growth of crystalline centers.&nbsp; Opticaland spectral investigations have shown that the introduction of Ag into the glass matrix As₄₀S₃₀Se₃₀ leads to a reduction in the optical band gap in both 3D and 2D samples, and that all compositions exhibit a normal dispersion of index of&nbsp; refraction. Also, the Raman spectroscopy results pointed to the fact that the incorporation of silver into the structural network of the investigated samples influences the formation of&nbsp; Ag&ndash;(S,Se)&ndash;As structures that is, causes the formation of new structural units that could affect the conductivity of these compositions. Measurements of the electrical characteristics of the 3D samples were performed in&nbsp; DC and AC regime and it was shown that silver concentration has a significant effect on electrical properties. Different mechanisms that are responsible for the transport of charge carriers depending on dopant concentration were determined. The complex&nbsp; impedance spectra of all compositions indicated the presence of the temperature dependence of the relaxation process, the non&ndash;Debye relaxation and the negative temperature coefficient of resistance which is characteristic of the semiconductors.</p>

No description available.

Chalcogenide glasses have attracted considerable attention due to their infrared transparency, low phonon energy, and high non linear optical properties. They have been explored as promising candidate for optical memories, gratings, switching devices etc. Because of their low phonon energy and high refractive indices, now a days these are used for high efficiency fibre amplifiers. Nevertheless, the availability of amorphous semiconductors in the form of high quality multilayers provides potential applications in the field of micro and optoelectronics. Among amorphous multilayers, chalcogenide multilayers are attractive because of the prominent photoinduced effects. Studies in chalcogenide amorphous multilayer have been directed towards two phenomena. One is photoinduced interdiffusion in short period multilayer systems which finds potential applications in holographic recording and fabrication of phase gratings . The other is photo darkening or photobleaching which is also known in thick films. These multilayers exhibit prominent photoinduced effects, similar to those exhibited by uniform thin films. In spite of its practical usefulness, the mechanism of photoinduced interdiffusion is not properly understood. Since most structural transformations are related to atomic diffusion, understanding of the structural transformation must be based on the diffusion process. The main aim of this thesis is to study the photoinduced diffusion in Sb/As2S3 multilayered films and (As2S3)1-xSbx thin films. In literature, there are reports about the photoinduced interdiffusion in Se/As2S3 and Bi/As2S3 multilayered films, but the mechanisms of photoinduced interdiffusion of these elements are not very clear. Raman scattering and infrared spectroscopy techniques have been used to study the photoinduced interdiffusion in Se/As2S3 and Bi/As2S3 multilayered films by Malyovanik et al. (M. Malyovanik, M. Shiplyak, V. Cheresnya, T. Remeta, S. Ivan, and A. Kikineshi, J. Optoelectron. Adv. Mater. 5, 397 (2003). But many questions remain unanswered. The characteristic spectra of components in the multilayer and those of the diffused layer were rather similar. In the present thesis, photoinduced interdiffusion in Sb/As2S3 multilayered samples are studied by Fourier Transform Infrared spectroscopy (FTIR) at room and low temperature and X-ray photoelectron spectroscopy (XPS). The photoinduced effects in (As2S3)1-xSbx thin films are studied by FTIR, XPS and Raman Spectroscopy. The detailed information about the distribution of electronic states in the absorption edge, localized states and the new bonds formed between the components due to photoinduced interdiffusion elucidated from the above studies will give more insight into the mechanism and kinetics of photoinduced interdiffusion. The thesis consists of seven chapters. References are given at the end of each chapter.

Chalcogenide glasses (ChGs) are produced by alloying together a “chalcogen” element” (S, Se or Te) with other elements, generally from group V (Sb, As) or group IV (Ge, Si) to form covalently bonded solids. A variety of stable non-crystalline materials can be prepared in bulk, fiber, and thin film forms using melt-quenching, vacuum deposition, and other less common techniques. Being amorphous semiconductors, ChGs exhibit a variety of photo-induced phenomena when irradiated with proper light and therefore find a wide range of technological applications (optical data storage, telecommunications, IR optics, etc). As research in this field is strongly driven by the needs of high-tech industry, physical properties related to the applications are more systematically investigated than the atomic structure, which is ultimately related to the macroscopic properties. A shortcoming of not having yet established microstructure-properties relations in ChGs is the lack of a strategic design of new materials for specific applications. The present study is a systematic investigation of properties for various families of ChGs using experimental techniques that probe structure (near infrared Raman scattering, x-ray and neutron diffraction, EXAFS), dynamics (IR-Photon correlation spectroscopy), thermal properties (differential scanning calorimetry) and glass morphology (scanning electron microscopy). Particular emphasis is given on binary and pseudo-ternary ChGs, which are the basis of more complex multi-component glasses, such as As-Se, Sb-Se, As-Te, Ge-S, Ge-S-AgI, As-Se-AgI, As-Se-Ag, As-S-AgI, As-S-Ag etc. over a wide glass composition range. The binary systems are known for their significant optical properties while the Ag-doped glasses belong to the class of superionic conductors. Although some of these glass-forming systems have been extensively studied in the literature, several details concerning the atomic arrangement are still not fully understood, partly due to that some of these glasses are phase separated at the microscale; a fact that is usually overlooked in related studies. In the present study, using high-resolution off-resonant Raman conditions and a more elaborate analysis of the Raman spectra, in conjunction with thermal and morphological data, we have been able to obtain a better understanding of atomic structure and to advance structure-properties relations for both the homogeneous and phase separated glasses. / Μια κατηγορία υαλωδών υλικών, γνωστή ως χαλκογονούχες ύαλοι αρχίζει να κερδίζει σημαντικό έδαφος στον τομέα των εφαρμογών λόγω των φωτονικών ιδιοτήτων που διαθέτουν. Ως χαλκογονούχες ύαλοι θεωρούνται οι υαλώδεις ενώσεις στις οποίες ένα τουλάχιστον περιέχει ένα από τα στοιχεία χαλκογόνων S, Se, και Te. Η ανάμιξη των στοιχείων αυτών με στοιχεία όπως Sb, As, Ge, Si, κλ.π. οδηγεί στο σχηματισμό σταθερών ομοιοπολικών υαλωδών ενώσεων. Το γεγονός ότι οι χαλκογονούχες ύαλοι είναι άμορφοι ημιαγωγοί έχει ως αποτέλεσμα την εμφάνιση πλήθους φωτο-επαγόμενων φαινομένων όταν οι ενώσεις αυτές ακτινοβοληθούν με φως κατάλληλου μήκους κύματος (συγκρίσιμο με το ενεργειακό τους χάσμα). Οι φωτο-επαγόμενες αλλαγές απορρέουν από τις αλλαγές οι οποίες επέρχονται στην ατομική δομή του υλικού (φωτο-δομικές αλλαγές). Τα φωτο-επαγόμενα φαινόμενα είναι εκμεταλλεύσιμα σε πλήθος τεχνολογικών εφαρμογών, για παράδειγμα στην οπτική αποθήκευση πληροφορίας (DVD), σε οπτικά που λειτουργούν στο υπέρυθρο, στις τηλεπικοινωνίες κλπ. Καθώς η έρευνα πάνω στο εν λόγω επιστημονικό πεδίο καθορίζεται σε μεγάλο βαθμό από τις ανάγκες για βιώσιμες τεχνολογικές εφαρμογές, οι φυσικές ιδιότητες, οι οποίες σχετίζονται άμεσα με τις εφαρμογές, έχουν μελετηθεί εντατικότερα και πιο συστηματικά από την ατομική δομή η οποία είναι κατά βάση υπεύθυνη για τα φωτο-επαγόμενα φαινόμενα. Αυτό έχει ως μειονέκτημα την απουσία συσχετισμών μεταξύ μικροσκοπικών και μακροσκοπικών ιδιοτήτων με αποτέλεσμα την απουσία στρατηγικού σχεδιασμού νέων λειτουργικών υλικών με τις επιθυμητές ιδιότητες. Η παρούσα διατριβή περιλαμβάνει μια συστηματική μελέτη διαφόρων οικογενειών χαλκογονούχων υάλων με τη χρήση πειραματικών τεχνικών οι οποίες διερευνούν την ατομική δομή (σκέδαση Raman, περίθλαση ακτίνων-X και νετρονίων, EXAFS), τις θερμικές ιδιότητες (διαφορική θερμιδομετρία σάρωσης) και την μορφολογία των υάλων (ηλεκτρονική μικροσκοπία σάρωσης). Ιδιαίτερη έμφαση δόθηκε σε δυαδικά και ψευδο-δυαδικά συστήματα χαλκογονούχων υάλων τα οποία συμπεριλαμβάνουν As-Se, Sb-Se, As-Te, Ge-S, Ge-S-AgI, As-Se-AgI, As-Se-Ag, As-S-AgI, As-S-Ag κλπ. για μεγάλο εύρος συστάσεων της κάθε οικογένειας. Τα δυαδικά συστήματα είναι γνωστά για τις εξαίρετες οπτικές τους ιδιότητες ενώ οι ύαλοι με προσμίξεις Αργύρου ανήκουν στην κατηγορία των υπεριοντικών υάλων με αρκετά υψηλές ιοντικές αγωγιμότητες που χαρακτηρίζονται από μικροσκοπικό διαχωρισμό φάσεων σε συγκεκριμένες συγκεντρώσεις του Αργύρου. Παρά το γεγονός ότι ορισμένα από τα προαναφερθέντα άμορφα υλικά έχουν κατ’ επανάληψη μελετηθεί στο παρελθόν, ακριβείς πληροφορίες σχετικά με την ατομική δομή τους δεν είναι διαθέσιμες, εν μέρει εξ’ αιτίας της ελλιπούς πειραματικής προσέγγισης και εν μέρει λόγω του μικροσκοπικού διαχωρισμού φάσεων που χαρακτηρίζει τις υάλους με πρόσμιξη Αργύρου, γεγονός το οποίο συχνά αμελείται σε προγενέστερες μελέτες. Στην παρούσα διατριβή, χρησιμοποιώντας τη φασματοσκοπία σκέδασης Raman υψηλής ανάλυσης και μακριά από συνθήκες συντονισμού, σε συνδυασμό με θερμικά και μορφολογικά δεδομένα των υάλων, κατέστη δυνατό να αποκτηθεί μια πιο σφαιρική γνώσης σχετικά με την ατομικής κλίμακας δομή των υάλων και να προαχθούν συσχετισμοί δομής-ιδιοτήτων τόσο για ομοιογενή όσο και για ανομοιογενείς υάλους.

Le marché du stockage de l'énergie est en perpétuelle expansion, tant pour les applications nomades que fixes. Afin de répondre aux exigences requises pour les diverses applications (appareils électroniques, véhicules hybrides et électriques, stockage des énergies renouvelables…), des batteries toujours plus performantes, compactes et légères doivent être développées. Pour cela, les batteries utilisant du lithium métallique en tant qu'anode sont les plus attractives en termes de densités d'énergies. Néanmoins, l'utilisation d'électrolytes liquides conventionnels, généralement des solvants organiques inflammables, dans de tels dispositifs soulève des problématiques de sécurité. Les travaux de recherche présentés dans ce manuscrit concernent l'étude de matériaux vitreux pouvant être utilisés en tant qu'électrolyte solide afin de permettre le développement de batteries tout-solide sûres et performantes. Des verres de sulfures au lithium, attractifs pour leurs propriétés de conduction ionique, sont étudiés et caractérisés. Les propriétés de conduction ionique dans les verres étant toujours mal comprises et sujettes à controverses, l'analyse structurale des verres présente ici un réel intérêt pour une meilleure compréhension des corrélations entre structure et propriétés. Un effort de recherche a donc été porté sur l'étude de l'ordre local dans les verres préparés via différentes techniques d'analyse structurale complémentaires. Enfin, les matériaux vitreux, sont de manière générale relativement faciles à mettre en forme. Les verres étudiés dans ce manuscrit peuvent alors également être utilisés en tant qu'électrolytes sous forme de couches minces dans les micro-batteries. Des premiers essais de dépôts par pulvérisation cathodique RF magnétron de couches minces conductrices ont donc été effectués et constituent la première brique à la fabrication de micro-batteries. / The energy storage market is in constant growth for both portable and stationary applications. To satisfy the requirements of various applications (electronic devices, hybrid-electric vehicles, renewable energy storage…), always more efficient, more compact and lightweight batteries have to be developed. Then, thanks to their high energy densities, batteries using Li metal anodes are the most promising to complete this challenge. However, the use of conventional liquid electrolytes raises safety issues, mainly related to the flammability of the organic liquid. In this thesis, glassy materials, exhibiting great interest towards developing solid electrolytes are considered and might enable the development of safe and efficient all-solid-state batteries. Here, Li-sulfide glasses, attractive for their ionic conduction properties, have been studied and characterized. The ionic conduction properties of glasses are still misunderstood and controversial, the structural investigation of glasses is of great interest in order to get a better understanding of structure-properties relationship. Then, the short and intermediate range order of prepared glasses have been investigated by the mean of various complementary structural analysis techniques. Finally, glassy materials are usually quite easy to shape. Thus, studied glasses in this thesis can also be used as thin-film electrolytes in microbatteries. First tests of sputtering of conducting thin-films have been performed by RF magnetron sputtering and constitute a first step in order to design microbatteries.

GeTe and Ge2Sb2Te5 alloys are potential candidates for non-volatile phase change random access memories (PCRAM). For electrical data storage applications the materials should have stable amorphous and crystalline phases, fast crystallization time, low power to switch, and high crystallization activation energy (to be stable at normal operating temperatures). Phase change memories can be tuned through compositional variations to achieve sufficient phase change contrast and thermal stability for data retention. Selenium is one of the attractive choices to use as an additive material owing to its flexible amorphous structure and a variety of possible applications in optoelectronics and solar cells. GeSb2Te3Se alloy, in which 25 at.% of Se substituted for Te, show a higher room temperature resistance with respect to parent GeSb2Te4 alloy, but the transition temperature is lowered which will affect the thermal stability. The RESET current observed for Sb65Se35 alloys were reduced and the crystallization speed increased 25 % faster with respect to Ge2Sb2Te5. Alloys of Ga-Sb-Se possess advantages such as higher crystallization temperatures, better data retention, higher switching speed, lower thermal conductivity and lower melting point than the GST, but the resistance ratio is limited to about two orders of magnitude. This affects the resistance contrast and data readability. It is with this background a study has been carried out in GeTe and GeSbTe system with Se doping. Studies on structural, thermal and optical properties of these materials all through the phase transition temperatures would be helpful to explore the feasibility of phase change memory uses. Thin films along with their bulk counterparts such as (GeTe)1-x Sex ( 0 < x ≤ 0.50) and (GST)1-xSex (0 < x ≤ 0.50), including GeTe and GST alloys, have been prepared. The results are presented in four chapters apart from the Introduction and Experimental techniques chapters. The final chapter summarizes the results. Chapter 1 provides an introduction to chalcogenide glasses, phase change memory materials and their applications. The fundamental properties of amorphous solids, basic phase change properties of Ge2Sb2Te5 and GeTe alloys and their applications are presented in detail. Various doping studies on GeTe and Ge2Sb2Te5 reported in literatures are reviewed. The limitations, challenges, future and scope of the present work are presented. In chapter 2, the experimental techniques used for thin film preparation, electrical characterizations, optical characterization and surface characterizations etc. are explained. Chapter 3 deals entirely on Ge2Sb2Te5 films studied throughout the phase transition, by annealing at different temperatures. Changes in sheet resistance, optical transmission, morphology and surface bonding characteristics are analyzed. The crystallization leads to an increase of roughness and the resistance changes to three orders of magnitude at 125 oC. Optical studies show distinct changes in transmittance during phase transitions and the optical parameters are calculated. Band gap contrast and disorder variation with annealing temperatures are explained. The surface bonding characteristics studied by XPS show Ge-Te, Sb-Te bonds are present in both amorphous and crystalline phases. The temperature dependent modifications of the band structure of amorphous GST films at low temperatures have been little explored. The band gap increment of around 0.2 eV is observed at low temperature (4.2 K) compared to room temperature 300 K. Other optical parameters like Urbach energy and B1/2 are studied at different temperatures and are evaluated. The observed changes in optical band gap (Eopt) are fitted to Fan’s one phonon approximation, from which a phonon energy (ћω) corresponding to a frequency of 3.59 THz resulted. The frequency of 3.66 THz optical phonons has already been reported by coherent phonon spectroscopy experiment in amorphous GST. This opens up an indirect method of calculating the phonon frequency of the amorphous phase change materials. Chapter 4 constitutes comparison of optical, electrical and structural investigation of GST and (GST)1-xSex films. It is well known that GST alloys have vacancy in their structure, which leads to the possibility of switching between the amorphous and crystalline states with minimum damage. Added Se may occupy the vacancy or change the bonding characteristics which intern may manifest in the possibility of change in optical and electrical parameters. The structural studies show a direct amorphous to hexagonal transition in (GST)1-xSex, where x ≥ 0.10 at.%. Raman spectra of the as deposited and annealed (GST)1-xSex films show structural modifications. The infrared transmission spectra indicate a shift in absorption edges from low to high photon energy when Se concentration increases in GST. Band gap values calculated from Tauc plot show the band gap increment with Se doping. It is noted that a small amount of Se doping increases the resistance of the amorphous and crystalline phases and maintains the same orders of resistance contrast. This will be beneficial as it improves the thermal stability and reduces the write current in a device. Switching studies show an increasing threshold voltage as the Se doping concentration increases. Chapter 5 comprises compositional dependent investigations of the bulk GeTe chalcogenides alloys added with different selenium concentrations. The XRD investigations on bulk (GeTe)1-xSex (x = 0.0, 0.02, 0.10, 0.20 and 0.50 at.%) alloys show that the crystalline structure of GeTe alloys does not affect ≤ 0.20 at.% of Se concentration. With increasing amount of Se concentration the alloys gets modified in to a homogeneous amorphous structure. This result has been verified from the XRD, Raman, XPS, SEM and DSC measurements. The possibility that Se occupying the Ge vacancy sites in GeTe structure is explained. Since Se is an easy glass former, the amorphousness increases in the alloys due to new amorphous phases formed by the Se with other elements. It is shown from Raman and XPS analysis that the Ge-Te bonds exists up to Se 0.20 at.% alloys. Ge-Se and GeTe2 bonds are increasing with increasing Se at.%. Melting temperature has found decreases and the reduction in melting point may reduces the RESET current. Further studies on switching behavior may bring out its usefulness. Chapter 6 deals with studies on (GeTe)1-xSex films for phase change memory applications based on the insight received from their bulk study. Even at low at.% addition of Se makes the as prepared (GeTe)1-xSex film amorphous. At 200 oC, GeTe crystalline structure is evolved and the intensity of the peaks reduces in the alloys with increase of Se content. At 300 oC, more evolved GeTe crystalline structure is seen compared to 200 oC annealed films whereas 0.20 at.% Se alloy remain amorphous. Resistance and thermal studies shows increase in crystallization temperature. It is expected that Se sits in the vacancies of the GeTe crystalline structural formation. This may also account for the increased threshold voltages with increasing Se doping. The band gap increase with increase of Se at.% signifying the possibility of band gap tuning in the material. Possible explanation for the increased order in GeTe due to Se doping is presented. The modifications in the alloy with Se addition can be explained with the help of chemical bond energy approach. Those bonds having higher energy leads to increased average bond energy of the system and hence the band gap. The XPS core level spectra and Raman spectra investigation clearly shows the GeTe bonds are replaced by Ge-Se bonds and GeTe2 bonds. The 0.10 at.% Se alloy is found to have a higher thermal stability in the amorphous state and maintains a gigantic resistance contrast compared to other Se concentration alloys. This alloy can be considered as an ideal candidate for multilevel PCM applications. Chapter 7 summarizes the major findings from this work and the scope for future work.