<p>In this project, nano powder of CoSb₃ thermoelectric material was synthesized using chemical alloying novel co-precipitation method. This method involved co-precipitation of TE precursor compounds in controlled pH aqueous solutions followed by thermo-chemical treatments including calcination and reduction to produce nano-particulates of CoSb₃. The nano powder was consolidated using rapid solid state spark plasma sintering (SPS) and the processing time was of the order of few minutes. On a result very high densities were achieved and grain growth was almost negligible.</p><p>Various batches of the CoSb₃ nano powder were produced to achieve high purity, minimum particle size and compensate Sb evaporation during thermo-chemical reduction. For de-agglomeration, powder was grinded before and after calcination. Samples were characterized at each stage during synthesis using XRD and SEM (with EDX). Thermal gravimetric analysis (TGA) was done before thermochemical treatments to observe weight losses with heating the powder at high temperatures and other physiochemical changes. Thermal diffusivity of the samples was measured at room temperature using Laser Flash Apparatus (LFA) and heat capacity was measured using Differential Scanning Calorimetry (DSC).   Thermal conductivities are calculated using these thermal diffusivities, heat capacities and densities of the sintered pellets. Average grain size is measure using image size J software.</p><p>It was observed that powder purity and size is affected by batch size, reduction conditions like holding temperature and time.  During sintering with SPS; heating and cooling rates, sintering temperature, holding pressure and time were the main variables. Grain size and morphology was analyzed using SEM.</p><p>It was observed that larger the grain size higher will be the thermal diffusivity, which leads to increase in thermal conductivity. Hence, grain size has affected on thermal conductivity and also on TE performance.</p> / QC 20100708

In this project, nano powder of CoSb3 thermoelectric material was synthesized using chemical alloying novel co-precipitation method. This method involved co-precipitation of TE precursor compounds in controlled pH aqueous solutions followed by thermo-chemical treatments including calcination and reduction to produce nano-particulates of CoSb3. The nano powder was consolidated using rapid solid state spark plasma sintering (SPS) and the processing time was of the order of few minutes. On a result very high densities were achieved and grain growth was almost negligible. Various batches of the CoSb3 nano powder were produced to achieve high purity, minimum particle size and compensate Sb evaporation during thermo-chemical reduction. For de-agglomeration, powder was grinded before and after calcination. Samples were characterized at each stage during synthesis using XRD and SEM (with EDX). Thermal gravimetric analysis (TGA) was done before thermochemical treatments to observe weight losses with heating the powder at high temperatures and other physiochemical changes. Thermal diffusivity of the samples was measured at room temperature using Laser Flash Apparatus (LFA) and heat capacity was measured using Differential Scanning Calorimetry (DSC).   Thermal conductivities are calculated using these thermal diffusivities, heat capacities and densities of the sintered pellets. Average grain size is measure using image size J software. It was observed that powder purity and size is affected by batch size, reduction conditions like holding temperature and time.  During sintering with SPS; heating and cooling rates, sintering temperature, holding pressure and time were the main variables. Grain size and morphology was analyzed using SEM. It was observed that larger the grain size higher will be the thermal diffusivity, which leads to increase in thermal conductivity. Hence, grain size has affected on thermal conductivity and also on TE performance. / QC 20100708

Thermoelectric materials are solid state devices having the capability to convert heat to electrical energy and vice versa. These materials are simple, have no moving parts and use no greenhouse gases. But the major drawback of these materials is their low conversion efficiency. Hence enhancement of thermoelectric efficiency is required to make the use of these devices widespread. Thermoelectric efficiency is related to a parameter termed figure of merit, ZT which is associated with the inter-related transport properties such as Seebeck coefficient, electrical and thermal conductivity. Efficient thermoelectric material should possess high Seebeck coefficient (S), high electrical conductivity () and low thermal conductivity (). The present investigation revolves around improvement of ZT of CoSb3 either by chemical doping or through microstructural modifications. These materials possess structural voids, which can be filled with foreign atoms. The rattling motion of these filler atoms reduces the thermal conductivity of these materials, thereby increasing the thermoelectric efficiency. The rattler atoms chosen for the present study are Mn and Yb. Both coarse and fine-grained MnxCo4Sb12 (x = 0. 0.2, 0.4, 0.8, 1.2 and 1.6) and Yb0.19Co4Sb12 have been synthesized and subjected to various structural and functional property characterizations. The structural study based on Rietveld Analysis and the corresponding difference Fourier maps confirms the void occupancy by Mn and Yb in MnxCo4Sb12 (x 0.2, 0.4 and 0.8) and Yb0.19Co4Sb12. In higher Mn content, x=1.2 and 1.6, Mn was found to partially substitute Co site and partially fill the voids and the remaining precipitated out as free particles. A comparative study of coarse and fine-grained CoSb3 has thrown light in to the grain size effect on the thermoelectric properties. Lowering of grain size helped in enhancement of ZT in CoSb3. Seebeck coefficient (thermoelectric power), electrical and thermal conductivity have been measured for different concentrations of the filler Mn atoms between 300K and 673K. A change in sign of the Seebeck coefficient from negative to positive occurs, when Mn concentration exceeds x=0.8. Electrical resistivity values was found to decrease initially with Mn filling with the minimum value at Mn content, x=0.4 and then gradually increase as Mn content increases. The thermal conductivity value decreases with Mn content in the CoSb3 indicating their rattling property which helps in the enhancement of the overall thermoelectric efficiency. There is a reduction in the value of ktotal in Mn filled CoSb3 than that of the unfilled counterpart. This decrease in the ktotal is a clear indication of the rattling motion of the filler Mn atom in the structural void of CoSb3. Highest ZT of 0.36 is achieved by Mn0.4Co4Sb12 at 373K. Higher concentration of Mn (with x= 1.2 and 1.6) proved to be detrimental in terms of improvement of the value of ZT. Grain size reduction helped in improvement of ZT in Mn0.2Co4Sb12. Maximal ZT of 0.06 at 523K is achieved in hot pressed Mn0.2Co4Sb12. The corresponding coarse-grained material is found to possess ZT of 0.01 at the said temperature. The enhancement can be attributed to high / ratio and high density. Similarly, fine grained Yb0.19Co4Sb12 shows higher ZT compared to the coarse-grained sample because high / and high S.

Increasing interest in an effciency enhancement of existing energy sources led to an extended research in the field of thermoelectrics. Especially skutterudites with their high power factor (electric conductivity times Seebeck coefficient squared) are suitable thermoelectric materials. However, a further improvement of their thermoelectric properties is necessary. The relatively high thermal conductivity can be decreased by introducing loosely bound guest ions, whereas atom substitution or nanostructuring (as thin films) could yield an increased power factor. The present work proves the feasibility to deposit single phase skutterudite thin films by MBE technique. In this regard CoSby and FeSby film series were deposited with three different methods: i) codeposition at elevated temperatures, ii) codeposition at room temperature followed by post-annealing, and iii) modulated elemental reactant method. The structural and thermoelectric properties of these films were investigated by taking the thermal stability of the film and the substrate properties into account. Compared to the stoichiometric Sb content of skutterudites of 75 at.%, a small excess of Sb is necessary for achieving single phase skutterudite films. It was found, that the deposited single phase CoSb3 films reveal bipolar conduction (and therefore a low Seebeck coefficient), whereas FeSb3 films show p-type conduction and very promising power factors at room temperature. The need of substrates with a low thermal conductivity and a suitable thermal expansion coefficient is also demonstrated. A high thermal conductivity influences the measurements of the Seebeck coefficient and the obtained values will be underestimated by thermal shortening of the film by the substrate. If the thermal expansion coefficient of film and substrate differ strongly from each other, crack formation at the film surface was observed. Furthermore, the realization of controlled doping by substitution as well as the incorporation of guest ions was successfully shown. Hence, this work is a good starting point for designing skutterudite based thin film structures. Two successful examples for such structures are given: i) a thickness series, where a strong decrease of the resistivity was observed for films with a thickness lower than 10nm, and ii) a FexCo1-xSb3 gradient film, for which the gradient was maintained even at an annealing temperature of 400°C.

Increasing interest in an effciency enhancement of existing energy sources led to an extended research in the field of thermoelectrics. Especially skutterudites with their high power factor (electric conductivity times Seebeck coefficient squared) are suitable thermoelectric materials. However, a further improvement of their thermoelectric properties is necessary. The relatively high thermal conductivity can be decreased by introducing loosely bound guest ions, whereas atom substitution or nanostructuring (as thin films) could yield an increased power factor. The present work proves the feasibility to deposit single phase skutterudite thin films by MBE technique. In this regard CoSby and FeSby film series were deposited with three different methods: i) codeposition at elevated temperatures, ii) codeposition at room temperature followed by post-annealing, and iii) modulated elemental reactant method. The structural and thermoelectric properties of these films were investigated by taking the thermal stability of the film and the substrate properties into account. Compared to the stoichiometric Sb content of skutterudites of 75 at.%, a small excess of Sb is necessary for achieving single phase skutterudite films. It was found, that the deposited single phase CoSb3 films reveal bipolar conduction (and therefore a low Seebeck coefficient), whereas FeSb3 films show p-type conduction and very promising power factors at room temperature. The need of substrates with a low thermal conductivity and a suitable thermal expansion coefficient is also demonstrated. A high thermal conductivity influences the measurements of the Seebeck coefficient and the obtained values will be underestimated by thermal shortening of the film by the substrate. If the thermal expansion coefficient of film and substrate differ strongly from each other, crack formation at the film surface was observed. Furthermore, the realization of controlled doping by substitution as well as the incorporation of guest ions was successfully shown. Hence, this work is a good starting point for designing skutterudite based thin film structures. Two successful examples for such structures are given: i) a thickness series, where a strong decrease of the resistivity was observed for films with a thickness lower than 10nm, and ii) a FexCo1-xSb3 gradient film, for which the gradient was maintained even at an annealing temperature of 400°C.:Contents 1 Introduction 2 Nanostructured thermoelectric materials 2.1 Thermoelectric materials and ZT 2.2 Recent developments in improving ZT in thin films 3 Thermoelectric transport theory 3.1 Electronic transport coefficients 3.2 Lattice thermal conductivity 4 Skutterudites as promising thermoelectric material 4.1 CoSb3 4.1.1 Structural properties of skutterudites 4.1.2 Band structure of CoSb3 and density of states 4.1.3 Thermoelectric properties of CoSb3 4.1.4 Synthesis of CoSb3 thin films 4.2 FeSb3 4.2.1 Structural and thermoelectric properties of FeSb3 thin films 4.2.2 Synthesis of FeSb3 thin films 5 Experimental methods 5.1 Basic methods for structural characterization 5.2 Electric characterization: Resistivity and Hall measurements using van der Pauw geometry 5.3 Thermoelectric characterization (Seebeck coefficient) 5.4 Thermal characterization methods 6 Deposition of skutterudite thin films 6.1 Deposition chamber and deposition parameters 6.2 Deposition methods 6.3 Composition control of skutterudite films 7 Control of structural properties by the used deposition method 7.1 Structural properties of CoSb3 thin films 7.1.1 Crystallization characteristics of CoSb3 films 7.1.2 Comparison of films deposited with different deposition methods 7.1.3 Influence of different deposition parameters on the film properties 7.2 Structural properties of FeSb3 thin films 7.2.1 Crystallization behaviour 7.2.2 Structural properties of post-annealed Fe-Sb films prepared by codeposition 7.2.3 Influence of the heating rate on the film properties 8 CoSb3 and FeSb3 composition series 8.1 CoSby composition series 8.1.1 Films deposited at elevated temperatures 8.1.2 Annealed films 8.2 FeSby composition series 9 Influence of various substrates on the film properties 9.1 Substrate influence on the film morphology 9.2 Substrate influence on thermoelectric properties and measurements 10 FexCo1-xSb3 - controlled doping by substitution of Co with Fe 10.1 Properties of codeposited FexCo1-xSb3 films 10.2 Properties of FexCo1-xSb3 films deposited via MERM 11 Filled CoSb3 thin films 12 Examples for nanostructured thin film approaches 12.1 CoSb3 thickness series 12.2 FexCo1-xSb3 gradient films 13 Summary and Outlook