<p>Ova disertacija predstavlja rezultate istraživanja uticaja dve vrste<br />intenzivnih promena Sunčevog zračenja na prostiranje radio talasa. Prvi deo<br />prikazanih rezultata odnosi se na efekte neperiodičnih zračenja u X-opsegu<br />talasnih dužina u toku trajanja Sunčevog X-flera. Izvršeno je modelovanje<br />karakteristika jonizovane sredine D-sloja jonosfere u toku celokupnog<br />trajanja efekata dodatne energije jonizacije i karakteristika prostiranja<br />radio talasa određenih frekvencijskih opsega u okviru navedene sredine.<br />Drugi deo rezultata prikazuje periodičnu promenu nivoa prijemnog signala<br />usmerene mikrotalasne radio komunikacije koja nastaje u toku jutarnjih<br />časova. Pokazano je da ova promena ima visok stepen korelisanosti sa<br />promenama vrednosti geomagnetskog polja i da je uzrokuje pojava Sunca na<br />horizontu. Na osnovu rezultata dobijenih merenjem je predložen model koji<br />opisuje trend navedene promene u jutarnjim časovima.</p> / <p>This thesis presents the research results of intensive solar radiation variation<br />influence on radio propagation. The first part of presented results is related to the<br />effects of non-periodic radiation within X-ray wavelength during Solar X-flare.<br />Modelling of ionosphere D-layer medium is performed during all time duration of<br />additional ionization energy, as well as radio propagation characteristics within this<br />medium. The second part of the measured results presents periodic variation of<br />receiving microwave radio signal level of experimental Line-of-site communication<br />during the morning hours. It is shown that this variation is highly correlated with<br />geomagnetic field component values variation and that is caused by the Sun<br />appearance on the horizon. Based on the experimentally collected results, the model<br />that describes this variation during morning hours is proposed.</p>

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied. The film’s electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.

Electrical and optical characterizations of heterostructures and thin films based on group III-V compound semiconductors are presented. Optical properties of GaMnN thin films grown by Metalorganic Chemical Vapor Deposition (MOCVD) on GaN/Sapphire templates were investigated using IR reflection spectroscopy. Experimental reflection spectra were fitted using a non - linear fitting algorithm, and the high frequency dielectric constant (ε∞), optical phonon frequencies of E1(TO) and E1(LO), and their oscillator strengths (S) and broadening constants (Γ) were obtained for GaMnN thin films with different Mn fraction. The high frequency dielectric constant (ε∞) of InN thin films grown by the high pressure chemical vapor deposition (HPCVD) method was also investigated by IR reflection spectroscopy and the average was found to vary between 7.0 - 8.6. The mobility of free carriers in InN thin films was calculated using the damping constant of the plasma oscillator. The terahertz detection capability of n-type GaAs/AlGaAs Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) structures was demonstrated. A threshold frequency of 3.2 THz (93 µm) with a peak responsivity of 6.5 A/W at 7.1 THz was obtained using a 0.7 µm thick 1E18 cm−3 n - type doped GaAs emitter layer and a 1 µm thick undoped Al(0.04)Ga(0.96)As barrier layer. Using n - type doped GaAs emitter layers, the possibility of obtaining small workfunctions (∆) required for terahertz detectors has been successfully demonstrated. In addition, the possibility of using GaN (GaMnN) and InN materials for terahertz detection was investigated and a possible GaN base terahertz detector design is presented. The non - linear behavior of the Inter Pulse Time Intervals (IPTI) of neuron - like electric pulses triggered externally in a GaAs/InGaAs Multi Quantum Well (MQW) structure at low temperature (~10 K) was investigated. It was found that a grouping behavior of IPTIs exists at slow triggering pulse rates. Furthermore, the calculated correlation dimension reveals that the dimensionality of the system is higher than the average dimension found in most of the natural systems. Finally, an investigation of terahertz radiation efect on biological system is reported.

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied. The film’s electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.

No description available.

Abstract The purpose of this task is to synthesize a dielectric substrate material through a sintering process, which can be used for non-invasive physiological sensor development. Low loss, high dielectric constant ceramic material is used. Sintering process is employed to ensure stable structure and homogeneous dielectric properties of the substrate. Samples were prepared with TiO2 and in combination with CuO and Al2O3. All samples were measured and validated in 500 MHz to 20 GHz frequency range. Characterization measurements were performed with a Vector Network Analyzer, FieldFox N9918A, and connected to Keysight, open ended coaxial probe and performance probe. Reflection based measurement method was used due to its simplicity, speed and requirement of wideband data. The dielectric measurement results of developed samples show non-frequency dispersive behaviour, high dielectric constant and data was also selected at 2.45 GHz in aligned to the industrial, scientific and medical band. The resulting measurements show the highest dielectric constant of 16.6 at 2.45 GHz with a very low loss behaviour. / Målet är att syntetisera ett material, genom sintringsprocess, som kan användas som ett dielektriskt substrat för utveckling av sensorer. Det dielektriska materialet har keramisk materialstruktur och innehar högt dielektricitetskonstant med låga dielektriska materialförluster. Denna uppgift kräver att dielektriska materialet ska vara stabilt och inneha isotropiska egenskaper efter att genomgått sintringsprocess. Proverna förberedes med TiO2 och även i kombination med TiO2 tillsammans med CuO och Al2O3. Proverna mäts i frekvensområdet 500 MHz till 20 GHz. Mätningarna utförs med Vector Network Analyzer, FieldFox N9918A från Keysight. Resultat som visas och jämförs i arbetet är tagna vid 2.45 GHz eftersom det används och är standardiserat för medicinskt frekvensband. Högsta uppmätta dielektricitetskonstant har värdet av 16,6. Resultaten visar även låga förluster i dielektrikumet.

A reflectometria no domínio do tempo permite estimar o teor de umidade de um meio através da sua correlação com a constante dielétrica. Uma sonda helicoidal TDR, que pode ser cravada em conjunto outros ensaios de penetração in situ para a estimativa do teor de umidade em diversas profundidades, tem aplicação interessante para a investigação geotécnica do subsolo. No presente trabalho, uma sonda TDR foi adaptada e utilizada em conjunto ao ensaio CPT para caracterização de um perfil de solo arenoso não saturado que ocorre na região de Bauru (SP). A calibração dessa sonda foi feita em laboratório especificamente para esse solo. As equações de calibração que mostraram os melhores resultados foram definidas correlacionando a constante dielétrica, condutividade elétrica aparente e a massa específica seca com o teor de umidade. Com o intuito de melhorar a acurácia na determinação do teor de umidade em campo e eliminar possíveis interferências no registro da onda eletromagnética, foram efetuadas modificações em algumas características do projeto original dessa sonda. Tais modificações consistiram em separar os eletrodos condutores e as partes metálicas da sonda, e eliminar o cabo coaxial de extensão, conectando a sonda diretamente a um cabo coaxial de 12 m de comprimento. Tais mudanças levaram a uma melhoria significativa na determinação do perfil de teor de umidade do local estudado. Os valores de teor de umidade de campo determinados usando o TDR ao longo de 8 m de profundidade foram comparados com os valores de referência obtidos de amostras deformadas retiradas com trado mecânico. O erro médio na estimativa do perfil de teor de umidade gravimétrico utilizando a sonda TDR helicoidal foi de 1.61%, na última campanha de ensaios realizados. Os resultados dessa pesquisa indicam que esta ferramenta é adequada para estimar do perfil de teor de umidade para uso em conjunto com o ensaio CPT. / The time domain reflectometry allows estimating the moisture content of a medium by means of its correlation with the dielectric constant. A coil TDR probe, which can be driven into the ground together with others in situ penetration tests, can be used to estimate the moisture content at different depths. It is an interesting approach for geotechnical site characterization. In this work, a coil TDR probe was adapted and used in combination with the CPT test for the site characterization of an unsaturated sandy soil profile which occurs in the region of Bauru (SP). The probe calibration was performed in laboratory specifically for that soil. The calibration equation, which presented the best results, were defined correlating the dielectric constant, electrical conductivity and dry density with the moisture content. In order to improve the accuracy for determining the water content in the field and to eliminate possible interference on the electromagnetic wave registration, modifications were made in some characteristics of the original design of this probe. Such modifications consisted in separating the conductive electrodes from the metal parts of the probe, and eliminating the coaxial extension cable, connecting the probe directly to a coaxial cable 12 m long. Such changes have led to a significant improvement in the determination of the moisture content profile of the studied site. The moisture content values determined in situ by using the TDR along 8 m depth were compared with reference values obtained from disturbed soil samples collected using mechanical augers. The root mean square error of the gravimetric water content profile using the TDR coil probe was 1.61% in the last test campaign. The results of this research indicate that this tool is suitable to estimate the gravimetric moisture content together with the CPT test.

La caractérisation des propriétés électriques et diélectriques des membranes d’UF et de NF constitue une étape essentielle pour la compréhension de leurs performances de filtration. Une nouvelle approche a été développée pour déterminer les propriétés diélectriques d’une membrane de NF par spectroscopie d’impédance. Celle-ci repose sur l’isolement de la couche active du support membranaire et sur l’utilisation de mercure comme matériau conducteur, ce qui nous a permis de prouver que la constante diélectrique de la solution à l’intérieur des nanopores est inférieure à celle de la solution externe. Deux configurations de cellule (fibres immergées dans la solution d’étude ou fibres noyées dans un gel isolant) ont été étudiées pour la réalisation de mesures électrocinétiques tangentielles sur fibres creuses et la solution autour des fibres s’est avérée influencer à la fois le courant d’écoulement et la conductance électrique de la cellule. De plus, la contribution importante du corps poreux des fibres au courant d’écoulement ne permet pas de convertir cette grandeur en potentiel zêta luminal. Les propriétés intéressantes de ces membranes ont finalement été mises à profit pour décontaminer des solutions contenant des ions métalliques. Les performances de dépollution, en termes de rétention des polluants et d’impact écotoxicologique, ont été étudiées sur des solutions synthétiques et un rejet issu de l’industrie du traitement de surface. Bien que les performances de rétention aient été remarquables, la toxicité de l’effluent réel n’a pu être totalement annihilée. Une étude approfondie de la rétention des polluants non métalliques s’avère donc nécessaire. / The characterization of electrical and dielectric properties of UF and NF membranes is an essential step to understand their filtration performance. A new approach has been developed to determine the dielectric properties of a NF membrane by impedance spectroscopy. This is based on the isolation of the membrane active layer and the use of mercury as conductive material, which allowed us to prove that the dielectric constant of the solution inside nanopores is lower than that of the external solution. Two cell configurations (fibers immersed in the solution or fibers embedded in an insulating gel) were investigated for the implementation of tangential electrokinetic measurements with hollow fibers and the solution around the fibers was found to influence both streaming current and cell electrical conductance. Moreover, the important contribution of the fiber porous body to the streaming current does not allow the conversion of the latter to luminal zeta potential. The advantageous properties of these membranes were finally used to decontaminate solutions containing metal ions. Decontamination performances in terms of both pollutant retention and ecotoxicological impact were studied on synthetic solutions and a discharge water from surface treatment industry. Although retention performances were remarkable, the toxicity of the real effluent could not be totally annihilated. A thorough study of the retention of non-metallic contaminants is thus required.

Ceramics and polymer-ceramic composites associated with high dielectric constants are of both scientific and industrial interest as these could be used in devices such as capacitors, resonators and filters. High dielectric constant facilitates smaller capacitive components, thus offering the opportunity to miniaturize the electronic devices. Hence there is a continued interest on high dielectric constant materials over a wide range of temperatures. Recently, CaCu3Ti4O12 (CCTO) ceramic which has centro-symmetric body centered cubic structure has attracted considerable attention due to its large dielectric constant (ε ~104-105) which is nearly independent of frequency (upto 10 MHz) and low thermal coefficient of permittivity (TCK) over 100-600K temperature range. Apart from the high dielectric ceramics, high dielectric polymer-ceramic composites have also become promising materials for capacitor applications. By combining the advantages of high dielectric ceramics and low leakage behaviour of polymers, one can fabricate new hybrid materials with high dielectric constants, and high breakdown field to achieve high volume efficiency and energy storage density for capacitor applications. The CCTO polycrystalline powders were generally prepared by the conventional solid-solid reaction route with CaCO3, TiO2 and CuO as the starting materials. This method of preparation often requires high temperatures and longer durations. To overcome these difficulties, in the present investigations, an attempt has been made to synthesize CCTO by adopting microwave assisted heating technique and wet chemical synthesis routes. Also the CCTO crystallites (size varying from nano to micrometers) incorporated in the Polyvinyliden fluoride (PVDF) and Polyaniline (PANI) matrix and several composites with high dielectric constants were fabricated and investigated. Further, the high dielectric constant glasses in the system (100-x)TeO2-xCaCu3Ti4O12, (x=0.5 to 3) were fabricated by the conventional melt-quenching technique and their structural and dielectric properties were studied. The results obtained pertaining to these aforementioned investigations are classified as follows. Chapter 1 is intended to give basic information pertaining to the dielectrics and various mechanisms associated with high dielectric constants. Brief exposure to the high dielectric constant materials is also given. The structural aspects of CCTO, various synthetic routes adopted for the synthesis and the origin of the dielectric anomaly in CCTO are elaborated. In addition, basic information about the high dielectric polymer-ceramic composites and glasses are provided. In chapter 2 the various experimental techniques that were employed to synthesize and characterize the materials under investigation were discussed. Chapter 3 reports the synthesis and characterization of CaCu3Ti4O12, (CCTO) powders by microwave assisted heating at 2.45 GHz, 1.1kW. The processing and sintering were carried out at different temperatures for varied durations. The optimum calcination temperature using microwave heating was found to be 950oC for 20 minutes to obtain cubic CCTO powders. This is found to be fast and energy efficient as compared to that of the conventional methods. The structure, morphology and dielectric properties of the CCTO ceramic processed by microwave assisted heating were studied via X-ray diffraction, Scanning electron microscopy (SEM) and impedance analyser. These studies revealed that, the microwave sintered (MS) samples were less porous than that of the conventional ones. Relative density of about 95% was achieved for the MS pellets (1000oC/60min) while for the conventional sintered (CS) pellets (1100oC/2h) it was only 91%. The dielectric constants for the microwave sintered (1000oC/60min) ceramics were found to vary from 11000 to 6950 in the 100 Hz to 100 kHz frequency range. The presence of larger grains (6-10μm) in the MS samples contributed to the higher dielectric constants. Chapter 4 deals with the synthesis of complex oxalate precursor, CaCu3(TiO)4(C2O4)8 • 9H2O, by the wet chemical route. The various trials and the different reaction schemes involved for the preparation of complex oxalate precursor were highlighted. The oxalate precipitate thus obtained was characterized by the wet chemical analyses, X-ray diffraction, FTIR absorption and TG/DTA analyses. The complex oxalate precursor, CaCu3(TiO)4(C2O4 )8.9H2O was subjected to thermal oxidative decomposition and the products of thermal decomposition were investigated employing XRD,TGA, DTA and FTIR techniques. Nanocrystallites of CaCu3Ti4O12 with the size varying from 30-200 nm were obtained at a temperature as low as 680oC. The nanocrystallites of CaCu3Ti4O12 were characterized using Electron Spin Resonance (ESR) and optical reflectance techniques. The selected area electron diffraction (SAED) pattern with the zone axis [012] and spot pattern in electron diffraction (ED) indicate their single-crystalline nature. The optical reflectance and ESR spectra indicate that the Cu (II) coordination changes from distorted octahedra to nearly flattened tetrahedra (squashed) to square planar geometry with increasing heat treatment temperature. The powders derived from the oxalate precursor have excellent sinterability resulting in high density ceramics which exhibited giant dielectric constants upto 40,000 (1 kHz) at 25oC, accompanied by low dielectric loss < 0.07. The effect of calcium content on the dielectric properties of CaxCu3Ti4O12 (x=0.90, 0.97, 1.0, 1.1 and 1.15) derived from the oxalate route was described in Chapter 5. The structural, morphological and dielectric properties of the ceramics were studied using X-ray diffraction, Scanning Electron Microscope along with Energy Dispersive X-ray Analysis (EDX), and Impedance analyzer. The X-ray diffraction patterns obtained for the x= 0.97, 1.0 and 1.1 ceramics could be indexed to a body– centered cubic perovskite related structure associated with the space group Im3. The microstructural studies revealed that the grains are surrounded by exfoliated sheets of Cu-rich phase. The microstructure that is evolved for the Ca0.97 ceramic more or less resembles that of the Ca1.0 ceramic, but the density of such exfoliated sheets of cu-rich phase is lesser for the Ca0.97 ceramic and none for Ca1.1 ceramic. The sintered pellet (x=0.97) was ground and thinned to the required thickness (~ 20nm) and analyzed using Transmission Electron Microscopy (TEM). The current-voltage (I-V) characteristics of the ceramics exhibited non-linear behaviour. The dielectric properties of these suggest that the sample corresponding to the composition x=0.97, has a reduced dielectric loss while retaining its high dielectric constant. Chapter 6 illustrates the results concerning the fabrication and characterization of nanocrystal composites of Polyaniline (PANI) and CaCu3Ti4O12 (CCTO). These were prepared using a simple procedure involving in-situ polymerization of aniline in dil. HCl. The PANI and the PANI-CCTO composites were subjected to X-ray diffraction, Fourier Transform Infrared (FTIR), Thermo gravimetric, Scanning Electron Microscopic (SEM) and Transmission electron microscopic analyses. The FTIR spectra recorded for the composites was similar to that of pure PANI unlike in the case of X-ray diffraction wherein the characteristics of both PANI and CCTO were reflected. The TGA in essence indicated the composites to have better thermal stability than that of pure PANI. The composite corresponding to 50%CCTO-50%PANI exhibited higher dielectric constant (4.6x106 @100Hz). The presence of the nano crystallites of CCTO embedded in the nanofibers of PANI matrix was established by TEM. The AC conductivity increased slightly upto 2kHz as the CCTO content increased in the PANI which was attributed to the polarization of the charge carriers. The value of dielectric constant obtained was higher than that of the other PANI based composites reported in the literature. Chapter 7 deals with the fabrication and characterization of diphasic Poly(vinylidene fluoride) (PVDF)-CCTO composite. The CCTO crystallites (size varying from nano to micrometers) incorporated in the Polyvinylidene fluoride (PVDF) and composites with varying CCTO content were fabricated. The structural, morphological and dielectric properties of the composites were studied using X-ray diffraction, Thermal analysis, Scanning Electron Microscope (SEM), Transmission Electron Microscopic (TEM) and Impedance analyzer. The room temperature dielectric constant as high as 95 at 100Hz has been realized for the composite with 0.55 Vol.fraction of CCTO (micro sized crystallites), which has increased to about 190 at 150oC. Whereas, the PVDF/CCTO nanocrystal composite with 0.13Vol.fraction of CCTO has exhibited higher room temperature dielectric constant (90 at 100Hz). The PVDF/CCTO nanocrystal composite was further investigated for the breakdown strength and electric modulus. The breakdown strength plotted against the dielectric constant evidenced an inverse relationship of breakdown voltage with the dielectric constant. The relaxation processes associated with these composites were attributed to the interfacial polarization or Maxwell-Wagner-Sillars (MWS) effect. Various theoretical models were employed to rationalize the dielectric behavior of these composites. The fabrication and characterization details of optically clear colored glasses in the system (100-x)TeO2-xCaCu3Ti4O12, (x=0.5 to 3 mol%) are reported in Chapter 8. The color varies from olive green to brown as the CaCu3Ti4O12 (CCTO) content increased in TeO2 matrix. The X-ray powder diffraction and differential scanning calorimetric analyses that were carried out on the as-quenched samples confirmed their amorphous and glassy nature respectively. The optical transmittance of the glasses exhibited typical band-pass filter characteristics. The dielectric constant and loss in the 100 Hz-1MHz frequency range were monitored as a function of temperature (323K673K). The dielectric constant and the loss increased as the CCTO content increased in TeO2 at all the frequencies and temperatures under study. Further, the dielectric constant and the loss were found to be frequency independent in the 323-473 K temperature range. The value obtained for the loss at 1MHz was 0.0019 which was typical of low loss materials, and exhibited near constant loss (NCL) contribution to the ac conductivity in the 100Hz-1MHz frequency range. The electrical relaxation was rationalized using the electrical modulus formalism. These glasses are found to be more stable (a feature which may be of considerable interest) as substrates for high frequency circuit elements in conventional semiconductor industries. Thesis ends with summary and conclusions, though each chapter is provided with conclusions and complete list of references.

This diploma thesis is focused on the analysis of basic problematics of dielectrics and nanocomposites. It describes the fabrication of experimental samples of nanocomposites from sealing epoxy resin and nanoparticles of titanium dioxide with various weight filling. Further, the thesis deals with measuring and evaluation of dielectric properties of the samples. It examines the influence of weight filling, temperature and frequency of the electric field on volume resistivity, relative permitivity and loss factor.