Design of systems in the low-end nanometer domain has introduced new dimensions in power consumption and dissipation in CMOS devices. With continued and aggressive scaling, using low thickness SiO2 for the transistor gates, gate leakage due to gate oxide direct tunneling current has emerged as the major component of leakage in the CMOS circuits. Therefore, providing a solution to the issue of gate oxide leakage has become one of the key concerns in achieving low power and high performance CMOS VLSI circuits. In this thesis, a new approach is proposed involving dual dielectric of dual thicknesses (DKDT) for the reducing both ON and OFF state gate leakage. It is claimed that the simultaneous utilization of SiON and SiO2 each with multiple thicknesses is a better approach for gate leakage reduction than the conventional usage of a single gate dielectric (SiO2), possibly with multiple thicknesses. An algorithm is developed for DKDT assignment that minimizes the overall leakage for a circuit without compromising with the performance. Extensive experiments were carried out on ISCAS'85 benchmarks using 45nm technology which showed that the proposed approach can reduce the leakage, as much as 98% (in an average 89.5%), without degrading the performance.

Aluminum was deposited onto both Teflon AF and Parylene AF surfaces by chemical vapor deposition of trimethylaluminum. This work shows that similar thin film (100 Angstroms) aluminum oxide adlayers form on both polymers at the low temperature dosing conditions used in the studies. Upon anneal to room temperature and above, defluorination of the polymer surfaces increased and resulted in fluorinated aluminum oxide adlayers; the adlayers were thermally stable to the highest temperatures tested (600 K). Angle-resolved spectra showed higher levels of fluorination toward the polymer/adlayer interface region. Copper films were also deposited at low temperature onto Teflon AF using a copper hexafluoroacetylacetonate-cyclooctadiene precursor. Annealing up to 600 K resulted in the loss of precursor ligands and a shift to metallic copper. As with aluminum adlayers, some polymer defluorination and resulting metal (copper) fluoride was detected. Parylene AF and polystyrene films surfaces were modified by directly dosing with water vapor passed across a hot tungsten filament. Oxygen incorporation into polystyrene occurred exclusively at aromatic carbon sites, whereas oxygen incorporation into parylene occurred in both aromatic and aliphatic sites. Oxygen x-ray photoelectron spectra of the modified polymers were comparable, indicating that similar reactions occurred. The surface oxygenation of parylene allowed enhanced reactivity toward aluminum chemical vapor deposition. Silicon-carbon (Si-Cx) films were formed by electron beam bombardment of trimethylvinylsilane films which were adsorbed onto metal substrates at low temperatures in ultra-high vacuum. Oxygen was also added to the films by coadsorbing water before electron beam bombardment; the films were stable to more than 700 K, with increasing silicon-oxygen bond formation at elevated temperatures. Copper metal was sputter deposited in small increments onto non-oxygenated films. X-ray photoelectric spectra show three-dimensional copper growth (rather than layer-by-layer growth), indicating only weak interaction between the copper and underlying films. Annealing at elevated temperatures caused coalescence or growth of the copper islands, with spectra indicating metallic copper rather than copper oxide.

In the first part of this dissertation, copper bimetallic corrosion and its inhibition in cleaning processes involved in interconnect fabrication is explored. In microelectronics fabrication, post chemical mechanical polishing (CMP) cleaning is required to remove organic contaminants and particles left on copper interconnects after the CMP process. Use of cleaning solutions, however, causes serious reliability issues due to corrosion and recession of the interconnects. In this study, different azole compounds are explored and pyrazole is found out to be a potentially superior Cu corrosion inhibitor, compared to the most widely used benzotriazole (BTA), for tetramethyl ammonium hydroxide (TMAH)-based post CMP cleaning solutions at pH 14. Micropattern corrosion screening results and electrochemical impedance spectroscopy (EIS) revealed that 1 mM Pyrazole in 8 wt% TMAH solution inhibits Cu corrosion more effectively than 10 mM benzotriazole (BTA) under same conditions. Moreover, water contact angle measurement results also showed that Pyrazole-treated Cu surfaces are relatively hydrophilic compared to those treated with BTA/TMAH. X-ray photoelectron spectroscopy (XPS) analysis supports Cu-Pyrazole complex formation on the Cu surface. Overall Cu corrosion rate in TMAH-based highly alkaline post CMP cleaning solution is shown to be considerably reduced to less than 1Å/min by addition of 1 mM Pyrazole. In the second part, a novel technique built in-house called multiple internal Reflection Infrared Spectroscopy (MIR-IR) was explored as a characterization tool for characterization of different low-k structures.In leading edge integrated circuit manufacturing, reduction of RC time delay by incorporation of porous ultra low-k interlayer dielectrics into Cu interconnect nanostructure continues to pose major integration challenges. The main challenge is that porous structure renders interlayer dielectrics mechanically weak, chemically unstable and more susceptible to the RIE plasma etching damages. Besides the challenge of handling weak porous ultra low-k materials, a lack of sensitive metrology to guide systematic development of plasma etching, restoration and cleaning processes is the major stumbling block. We explored Multiple Internal Reflection Infrared Spectroscopy and associated IR techniques as a sensitive (sub-5 nm) characterization tool to investigate chemical bonding modification across fluorocarbon etch residues and low-k dielectric interface after plasma etching, ashing, UV curing and post-etch cleaning. The new insights on chemical bonding transformation mapping can effectively guide the development of clean-friendly plasma etch for creating ultra low-k dielectric nanostructures with minimal dielectric damages.

This work deals with modeling of progression of dielectric variables and mixture formulas for solution of properties of composite materials in dependency on frequency. Theoretical part of the work explains physical principles of polarisation mechanisms and influence on dielectric constant with changing temperature and frequency. In theoretical part processes inside the composite material, which is in electrical field are described. The work contains summary of mixture formulas and methods of their derivation. Program for use in education is a part of the work. It allows modelling of progression of dielectric variables in dependency on frequency and Cole-Cole circle diagram. In mixtures it allows modelling of frequency dependencies of dielectric constant in accordance to Maxwell's, Bőttcher's and Lichtenecker's mixture formulas.

This doctoral thesis deals with the analysis of dielectric spectra of glycerol with dielectric relaxation spectroscopy (DRS). Dielectric spectra of glycerol have been measured in the frequency range 20 Hz to 10 MHz and in the temperature range 10 K to 300 K. The observed dielectric spectra featured a typical relaxation maximum, which could be in the first approximation described by the Arrhenius equation. The activation energy of the relaxation process observed was 90 MJ/kmol. The relaxation strength as well as the shape of the relaxation peak remained in the temperature interval 180 K - 230 K (visibility of peak) almost the same, thus indicating that no change of the relaxation mechanism comes about. Much attention was in the thesis paid to the analysis of the excess component of the relaxation alfa process, in the literature commonly denoted as "excess wing". The thesis puts forward a procedure for the quantification of the magnitude of the excess wing. The excess wing magnitude thus determined turns out to increase monotonously with increasing temperature. The excess wing is here interpreted as a manifestation of a weakly-pronounced beta relaxation.

Semiconductor die attach materials for high voltage, high reliability analog devices require high thermal conductivity and retention of dielectric strength. A comparative study of effective thermal conductivity and dielectric strength of selected thermoset/ceramic composites was conducted to determine the effect of ceramic particle size and ceramic particle loading on thermoset polymers. The polymer chosen for this study is bismaleimide, a common aerospace material chosen for its strength and thermal stability. The reinforcing material chosen for this study is a ceramic, hexagonal boron nitride. Thermal conductivity and dielectric breakdown strength are measured in low and high concentrations of hexagonal boron nitride. Adhesive fracture toughness of the composite is evaluated on copper to determine the composite’s adhesive qualities. SEM imaging of composite cross-sections is used to visualize particle orientation within the matrix. Micro-indentation is used to measure mechanical properties of the composites which display increased mechanical performance in loading beyond the percolation threshold of the material. Thermal conductivity of the base polymer increases by a factor of 50 in 80%wt loading of 50µm hBN accompanied by a 10% increase in composite dielectric strength. A relationship between particle size and effective thermal conductivity is established through comparison of experimental data with an empirical model of effective thermal conductivity of composite materials.

No description available.

Plasma induced damage of ultra low-k (ULK) dielectrics is a common phenomenon in BEOL interconnects. The damage leads to an increase in k-value, which raises the RC delay, leading to increased power consumption and cross talk noise. Therefore, diverse repair and post etch treatments (PET) have been proposed to restore or reduce the ULK damage. However, current repair processes are usually based on non-plasma silylation, which suffers from limited chemistry diffusion into the ULK. Moreover, the conventional PET based on anisotropic plasma results in bottom vs. sidewall inhomogeneities of the structures (e.g. via and trench). To reduce these drawbacks, an organosilane downstream -plasma (DSP) was applied. This new application resulted in an increased resistance to ULK removal by fluorinated wet clean chemistries, preserving the ULK hydrophobicity, keeping its carbon content relatively high. The effective RC measured on 28 nm node patterned wafers treated with a DSP PET remains nevertheless comparable to the process of record (POR).

An Electrical Capacitance Volume Tomography system has been created for use with a new image reconstruction algorithm capable of imaging high contrast dielectric distributions. The electrode geometry consists of two 4 x 4 parallel planes of copper conductors connected through custom built switch electronics to a commercially available capacitance to digital converter. Typical electrical capacitance tomography (ECT) systems rely solely on mutual capacitance readings to reconstruct images of dielectric distributions. This dissertation presents a method of reconstructing images of high contrast dielectric materials using only the self capacitance measurements. By constraining the unknown dielectric material to one of two values, the inverse problem is no longer ill-determined. Resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminum structure inserted at different positions within the sensing region. Comparisons with standard two dimensional ECT systems highlight the capabilities and limitations of the electronics and reconstruction algorithm.

No description available.