The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance. Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.

No description available.

No description available.

Printed circuit board manufacturing involves subtractive copper (Cu) etching where fine features are developed with a specific spatial resolution and etch profile of the Cu interconnects. A UV-Vis ATR metrology, to characterize the chemical transitions, has been developed to monitor the state of the bath by an in-situ measurement. This method provides a direct correlation of the Cu etch bath and was able to predict a 35% lower etch rate that was not predicted by the three current monitoring methods (ORP, specific gravity, and conductivity). Application of this UV-Vis ATR probe confirmed that two industrial etch baths, in identical working conditions, confirmed a difference in Cu2+ concentration by the difference of the near IR 860nm peak. The scope of this probe allowed chemically specific monitoring of the Cu etch bath to achieve a successful regeneration for repeated use. Interlayer dielectrics (ILDs) provide mechanical and electrical stability to the 3D electrical interconnects found in IC devices. It is particularly important that the structural support is created properly in the multilayered architecture to prevent the electrical cross signaling in short range distances. A combined multiple internal reflection and transmission FTIR has been employed for the characterization of silicon oxycarbonitride (SiOCN) films. These dielectric low-k films incorporate various functional groups bonded to silicon and require chemical bonding insight in the transformation and curing process. Distinct SiOx bonding patterns were differentiated, and the structure of the films can be predicted based on the amount of Si network and caged species. Further optimization of the FTIR analysis must minimize interference from moisture that can impact the judgement of peak heights. To accommodate this, a high-quality glove box was designed for dry air feedthrough to achieve a 95% moisture reduction during analysis, where less than 0.1 mAbs of moisture is detected in the spectra (without additional correction). The glove box allows for the rapid analysis of multiple sample throughput to outpace alternative characterization methods while retaining low spectral noise and a dry environment for 24/7 analysis. There is a great need to identify new catalysts that are suitable for tackling current economic demands, one of which is the nitrogen reduction reaction (NRR). The development of the surface enhanced infrared absorption spectroscopy (SEIRAS) has been applied to characterize the NRR mechanisms on the vanadium oxynitride electrocatalyst. Electrochemical measurements demonstrate NRR activity that is up to three times greater in the presence of N2 than the control Ar. FTIR operando suggests that a considerable number of intermediates were formed and continued to increase in absorbing value under an applied potential of -0.8 V vs Ag/AgCl. XPS results of the post-NRR film suggest a restricting of the film where vanadium oxynitride films are prone to instabilities under the possible MvK mechanism. After 90 minutes of NRR, the NH3 generated was approximately 0.01 ppm was calculated for through the salicylate colorimetric method. On-going efforts are focusing on optimizing the vanadium oxynitride film by the tuning of the oxynitride ratios and crystalline properties to promote the formation of V≡N: during the nitrogen reduction reaction.

The continuous downscaling has enforced the device size and oxide thickness to few nanometers. After serving for several decades as an excellent gate oxide layer in complementary metal oxide semiconductor (CMOS) devices, the thickness of SiO2 layer has reached to its theoretical limits. Ultra-thin films of SiO2 can result in severe leakage currents due to direct tunneling as well as maintaining the homogeneity of the layers becomes an additional challenge. The use of a high- (HK) layer can solve these twin concerns of the semiconductor industry, which can also enhance the capacitance due to superior dielectric permittivity and reduce the leakage current by being thicker than the silicon dioxide. This thesis is concerned about the development of solution route fabricated high-k (TiO2, ZrO2 and HfO2) gate dielectrics and the investigation of high-/silicon interfaces by highly sensitive DLTS technique in MOS structures. The solution processing reduce the industrial fabrication cost and the DLTS method has the advantage to accurately measure the interface related defects parameters; such as interface trap density (Dit), capture cross-section (), activation energy (ET) and also distinguish between bulk and interface traps. In this thesis, HK films have been deposited by solution route, the material and electrical properties of the film and the HK/Si interface have been extensively evaluated. IN CHAPTER 1, we have summarized the history and evolution of transistor and it provides the background for the work presented in this thesis. IN CHAPTER 2, we have described the experimental method /technique used for the fabrication and characterization. The advantages and working principals of spin-coating and DLTS techniques are summarized. IN CHAPTER 3, we have presented the preparation and optimization of TiO2 based HK layer. Structural, surface morphology, optical electrical and dielectric properties are discussed in details. A high- 34 value is achieved for the 36 nm TiO2 films. IN CHAPTER 4, we presented the technologically relevant Si/TiO2 interface study by DLTS technique. The DLTS analysis reveals a small capture cross-section of the interface with acceptable interface state density. IN CHAPTER 5, we have focused on the fabrication of amorphous ZrO2 films on p-Si substrate. The advantage of amorphous dielectric layer is summarized as first dielectric reported SiO2 is used in its amorphous phase. The moderate-15 with low leakage current density is achieved. IN CHAPTER 6, the HfO2 films are prepared using hafnium isopropoxide and a high value of dielectric constant 23 is optimized with low leakage current density. The current conduction mechanisms are discussed in details. IN CHAPTER 7, we have probed the oxygen vacancy related sub-band-gap states in HfO2 by DLTS technique. IN CHAPTER 8, we have presented the summary of the dissertation and the prospect research directions are suggested. In summary, we have studied the group IVB transition metal elemental oxides (TMEO); TiO2, ZrO2 and HfO2 thin films in the MOS structure, as a possible replacement of SiO2 gate dielectric. For the TMEO films deposition a low-cost and simple method spin-coating was utilized. The film thicknesses are in the range of 35 – 39 nm, which was measured by ellipsometry and confirmed with the cross-sectional SEM. A rough surface of gate dielectric layer can trap the charge carrier and may cause the Fermi level pinning, which can cause the threshold voltage instabilities. Hence, surface roughness of oxide layer play an important role in CMOS device operation. We have achieved quite good flat surfaces (RMS surface roughness’s are 0.2 – 2.43 nm) for the films deposited in this work. The TiO2 based MOS gate stack shows an optimized high dielectric constant ( 34) with low leakage current density (3.710-7 A.cm-2 at 1 V). A moderate dielectric constant ( 15) with low leakage current density (4.710-9 A.cm-2 at 1 V) has been observed for the amorphous ZrO2 thin films. While, HfO2 based MOS gate stack shows reasonably high dielectric constant ( 23) with low leakage current density (1.410-8 A.cm-2 at 1 V). We have investigated the dominating current conduction mechanism and found that the current is mainly governed by space charge limited conduction (SCLC) mechanism for the high bias voltages, while low and intermediate bias voltages show the (Poole – Frenkel) PF and (Fowler – Nordheim) FN tunneling, respectively. For the HfO2 MOS device band alignment is drawn from the UPS and J-V measurements. The band gap and electron affinity of HfO2 films are estimated 5.9 eV and 3 eV, respectively, which gives a reasonable conduction band offset (1.05 eV) with respect to Si. A TMEO film suffers from a large number of intrinsic defects, which are mostly oxygen vacancies. These defects can create deep levels below the conduction band of high- dielectric material, which can act like a hole and electron traps. In addition to that, interface between Si and high- is an additional concern. These defect states in the band gap of high- or at the Si/ high- interface might lead to the threshold voltage shifts, lower carrier mobility in transistor channel, Fermi level pinning and various other reliability issues. Hence, we also studied bulk and interfacial defects present in the high- films on Si and their interface with Si by a very sensitive DLTS technique. The capture cross-sections are measured by insufficient filling DLTS (IF – DLTS). The defects present at the interface are Si dandling bond and defect in the bulk are mostly oxygen vacancies related defects present in various charge states. The interface states (Dit) are in the range of 2×1011 to 9×1011 eV-1cm-2, which are higher than the Al/SiO2/Si MOS devices (Dit in Al/SiO2/Si is the benchmark and in the order of 1010 eV-1cm-2). Still this is an acceptable value for Si/high-k (non-native oxide) MOS devices and consistent with other deposition methods. The capture cross-sections are found to be quite low in the order of 10-18 to 10-19 cm2, which indicate a minor impact on the device operation. The small value of capture cross-sections are attributed to the involvement of tunneling, to and from the bulk traps to the interface. In conclusion, the low cost solution processed high- thin films obtained are of high quality and find their importance as a potential dielectric layer. DLTS study will be helpful to reveal various interesting facts observed in high- such as resistive switching, magnetism and leakage current problems mediated by oxygen vacancy related defects

Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to the possibility of transparent radio frequency applications, such as transparent RFID tags. At the time of its fabrication, this ring oscillator was the fastest oxide electronics ring oscillator reported, with an output frequency of 2.16 MHz, and a time delay per stage of 77 ns. The second focus is to ascertain whether a three-terminal device (i.e., a TFT) is an appropriate structure for conducting space-charge-limited-current (SCLC) measurements. It is found that it is not appropriate to use a diode-tied or gate-biased TFT configuration for conducting a SCLC assessment since square-law theory shows that transistor action alone gives rise to I proportional to V² characteristics, which can easily be mistakenly attributed to a SCLC mechanism. Instead, a floating gate TFT configuration is recommended for accomplishing SCLC assessment of AOS channel layers. The final focus of this work is to describe an assessment procedure appropriate for determining if a dielectric is suitable for use as a TFT gate insulator. This is accomplished by examining the shape of a MIM capacitor's log(J)-ξ curve, where J is the measured current density and ξ is the applied electric field. An appropriate dielectric for use as a TFT gate insulator will have a log(J)-ξ curve that expresses a clear breakover knee, indicating a high-field conduction mechanism dominated by Fowler-Nordheim tunneling. Such a dielectric produces a TFT with a minimal gate leakage which does not track with the drain current in a log(I[subscript D])-V[subscript GS] transfer curve. An inappropriate dielectric for use as a TFT gate insulator will have a log(J)-ξ curve that does not express a clear breakover knee, indicating that the dominate conduction mechanism is defect driven (i.e., pin-hole like shunt paths) and, therefore, the dielectric is leaky. It is shown that experimental log(J)-ξ leakage curves can be accurately simulated using Ohmic, space-charge-limited current (SCLC), and Fowler-Nordheim tunneling conduction mechanisms. / Graduation date: 2010

There is great interest in the development of new polar dielectric ceramics and multiferroic materials with new and improved properties. A family of tetragonal tungsten bronze (TTB) relaxors of composition Ba₆M³⁺Nb₉O₃₀ (M³⁺ = Ga³⁺, Sc³⁺ and In³⁺, and also their solid solutions) were studied in an attempt to understand their dielectric properties to enable design of novel polar TTB materials. A combination of electrical measurements (dielectric and impedance spectroscopy) and powder diffraction (X-ray and neutron) studies as a function of temperature was employed for characterising the dynamic dipole response in these materials. The effect of B-site doping on fundamental dipolar relaxation parameters were investigated by independently fitting the dielectric permittivity to the Vogel-Fulcher (VF) model, and the dielectric loss to Universal Dielectric Response (UDR) and Arrhenius models. These studies showed an increase in the characteristic dipole freezing temperature (T[subscript(f)]) with increase B-cation radius. Crystallographic data indicated a corresponding maximum in tetragonal strain at T[subscript(f)], consistent with the slowing and eventual freezing of dipoles. In addition, the B1 crystallographic site was shown to be most active in terms of the dipolar response. A more in-depth analysis of the relaxor behaviour of these materials revealed that, with the stepwise increase in the ionic radius of the M³⁺ cation on the B-site within the Sc-In solid solution series, the Vogel-Fulcher curves (lnf vs. T[subscript(m)]) are displaced to higher temperatures, while the degree of relaxor behaviour (frequency dependence) increases. Unfortunately, additional features appear in the dielectric spectroscopy data, dramatically affecting the Vogel-Fulcher fitting parameters. A parametric study of the reproducibility of acquisition and analysis of dielectric data was therefore carried out. The applicability of the Vogel-Fulcher expression to fit dielectric permittivity data was investigated, from the simple unrestricted (“free”) fit to a wider range of imposed values for the VF relaxation parameters that fit with high accuracy the experimental data. The reproducibility of the dielectric data and the relaxation parameters obtained by VF fitting were shown to be highly sensitive to the thermal history of samples and also the conditions during dielectric data acquisition (i.e., heating/cooling rate). In contrast, UDR analysis of the dielectric loss data provided far more reproducible results, and to an extent was able to partially deconvolute the additional relaxation processes present in these materials. The exact nature of these additional relaxations is not yet fully understood. It was concluded application of the Vogel-Fulcher model should be undertaken with great care. The UDR model may represent a feasible alternative to the evaluation of fundamental relaxation parameters, and a step forward towards the understanding of the dielectric processes in tetragonal tungsten bronzes.

Esta Tese aborda o estudo de transistores por efeito de campo orgânicos (OFETs do inglês, Organic Feld-Effect Transistors). Entender o comportamento da carga acumulada no canal do OFET, a qual é responsável pelo processo de condução elétrica no dispositivo, é de grande importância para ajudar a melhorar sua eficiência ou a propor um modelo teórico que descreva o comportamento do transistor em todos os seus regimes de operação. Vários trabalhos na literatura investigam o campo elétrico na camada semicondutora do transistor (ao longo do canal) gerado pela acumulação de cargas, porém nenhum investiga o campo na camada dielétrica de OFETs, que é diretamente proporcional à carga acumulada no canal. Investigou-se inicialmente o campo elétrico na camada dielétrica do dispositivo por meio da espectroscopia vibracional por Geração de Soma de Frequências (espectroscopia SFG do inglês, Sum-Frequency Generation). Espectros SFG obtidos nos dispositivos polarizados exibiram uma banda em ~1720 cm-1, devido ao grupo carbonila da camada dielétrica orgânica (PMMA – poli(metil metacrilato)), cuja a amplitude foi proporcional à voltagem de porta aplicada, indicando que esses grupos polares foram orientados sob ação do intenso campo elétrico no dispositivo. Esse sinal SFG induzido pelo campo pode ser devido a duas contribuições, um termo não linear de segunda ordem (devido à reorientação molecular) e outro de terceira ordem (interação entre os campos ópticos e o campo estático no volume do material). Observamos uma redução quase completa do sinal SFG em altas temperaturas (próximas da Tg do polímero dielétrico), indicando que o mecanismo de reorientação molecular é o responsável pelo sinal SFG gerado. Foram realizadas então medidas preliminares de microscopia SFG para mapear esse sinal SFG ao longo do canal de OFETs a base dos polímeros N2200 (semicondutor) e PMMA (dielétrico). Os resultados conseguem demonstrar a variação da densidade de carga acumulada no canal quando o dispositivo está polarizado e próximo à saturação. Usando Microscopia por Modulação de Carga (microscopia CMM do inglês, Charge Modulation Microscopy), que é outro método não invasivo para investigar a acumulação de cargas em um dispositivo operando, mapeamos a distribuição de carga no canal desses OFETs com alta resolução espacial (sub-micrométrica). Além disso, uma simulação da densidade de carga esperada e dos perfis de CMM foi realizada usando um modelo ambipolar para OFETs. Com base nessas simulações, propusemos uma modulação de onda quadrada do OFET, que permite uma comparação mais direta dos perfis de CMM com o perfil de densidade de carga ao longo do canal do transistor. Usando o esquema proposto, esses perfis foram medidos e comparados com o esperado com base no modelo ambipolar. Em geral os perfis de densidade de carga obtidos concordam bem com o modelo, usando apenas um único parâmetro global ajustável, exceto muito próximo do eletrodo de dreno e no regime de saturação profunda, quando os experimentos apresentam um artefato devido à eletro-absorção e não permitem uma comparação precisa com o modelo. Portanto, espera-se que esta Tese tenha contribuído para o avanço de técnicas de caracterização da distribuição de carga em OFETs, e assim melhorar o entendimento de seus mecanismos de funcionamento. / This Thesis deals with the study of Organic Field Effect Transistors (OFETs). Understanding the behavior of the accumulated charge along the OFET channel, which is responsible for the electrical conduction process in the device, is of great importance for improving its efficiency or proposing a theoretical model that describes the behavior of the transistor in all its operating regimes. Several studies in the literature investigate the electric field in the semiconductor layer of the transistor (along the channel) generated by the charge accumulation, but none investigates the field in the OFET dielectric layer, which is directly proportional to the charge accumulated in the channel. The electric field in the dielectric layer of the device was initially investigated by Sum-Frequency Generation (SFG) vibrational spectroscopy. SFG spectra obtained in the polarized devices exhibited a band at ~ 1720 cm-1, due to the carbonyl group of the organic dielectric layer (PMMA - poly (methyl methacrylate)), whose amplitude was proportional to the applied gate voltage, indicating that these polar groups were oriented by the intense electric field in the device. This field-induced SFG signal may be due to two contributions, a second order non-linear term (due to molecular reorientation) and a third order term (interaction between the optical fields and the static field in the material volume). We observed an almost complete reduction of the SFG signal at high temperatures (close to the Tg of the dielectric polymer), indicating that the molecular reorientation mechanism is responsible for the generated SFG signal. Preliminary SFG microscopy measurements were performed to map this SFG signal along the channel of OFET fabricated with N2200 (semiconductor) and PMMA (dielectric) polymers. The results demonstrate the variation of the accumulated charge density along the channel when the device is polarized and close to saturation. Using Charge Modulation Microscopy (CMM), which is another noninvasive method to investigate the accumulation of charges in an operating device, we mapped the charge distribution in the channel of these OFETs with high spatial resolution (sub-micrometer). In addition, a simulation of the expected charge density and CMM profiles was performed using an ambipolar model for OFETs. Based on these simulations, we proposed a square-wave modulation of the OFET, which allows a more direct comparison of the CMM profiles with the charge density profile. Using the proposed scheme, these profiles along the transistor channel were measured and compared with those expected from the ambipolar model. In general, the obtained charge density profiles agree well with the model, using only a single global adjustable parameter, except very close to the drain electrode and in the deep saturation regime, when the experiments have an artifact due to the electro-absorption and do not allow a precise comparison with the model. Therefore, it is expected that this Thesis has contributed to the advancement of techniques to characterize the charge distribution in OFETs, and thus improve the understanding of its operating mechanisms. Keywords: Field-effect transistors. Organic electronics. Nonlinear optics. Sum-frequency generation. Polarization of dielectrics. Charge modulation microscopy. Metal-insulator-semiconductor capacitor.

Im Laufe der Verkleinerungen integrierter Schaltungen ergab sich die Notwendigkeit der alternativen dielektrischen Materialen. Hohe Polarisierbarkeiten in diesen dielektrischen Dünnfilmen treten erst in hoch direktionalen kristallinen Phasen auf. Aufgrund der erschwerten Integrierbarkeit von epitaktischen, einkristallinen Oxidfilmen können nur poly-, beziehungsweise nanokristalle Filme eingesetzt werden. Diese sind jedoch mit hohen Leckströmen behaftet. Weil die Information in einer DRAM-Zelle als Ladung in einem Kondensator gespeichert wird ist der Verlust dieser Ladung durch Leckströme die Ursache für Informationsverluste. Die Frequenz der notwendigen Auffrischungszyklen einer DRAM-Zelle wird direkt durch die Leckströme bestimmt. Voraussetzungen für die Entwicklung neuer dielektrischer Materialien ist das Verständnis der zugrunde liegenden Ladungsträgertransportmechanismen und ein Verständnis der strukturellen Schichteigenschaften, welche zu diesen Leckströmen führen. Conductive atomic force Microscopy ist ein Rastersondenmethode mit der strukturelle Eigenschaften mit lokaler elektrischer Leitfähigkeit korreliert wird. Mit dieser Methode wurde in einer vergleichenden Studie die räumlichen Leckstromverteilungen untersucht. Und es wurde gezeigt, dass es genügt eine nicht geschlossene Zwischenschicht Aluminiumoxid in eine Zirkoniumdioxidschicht zu integrieren um die Leckströme signifikant zu reduzieren während eine ausreichend hohe Kapazität erhalten bleibt. Darüberhinaus wurde ein CAFM modifiziert und benutzt um das Schaltverhalten eines Siliziumnanodrahtschottkybarrierenfeleffektransistor in Abhängigkeit der Spitzenposition zu untersuchen. Es konnte experimentell bestätigt werden das die Schottkybarrieren den Ladungstransport in diesen Bauteilen kontrollieren. Darüber hinaus wurde ein proof-of-concept für eine umprogrammierbaren nichtflüchtigen Speicher, der auf Ladungsakkumulation und der resultierenden Bandverbiegung an den Schottkybarrieren basiert, gezeigt. / In the course of the ongoing downscaling of integrated circuits the need for alternative dielectric materials has arisen. The polarizability of these dielectric thin-films is highest in highly directional crystalline phases. Since epitaxial single crystalline oxide films are very difficult to integrate into the complex DRAM fabrication process, poly- or nanocrystalline thin-films must be used. However these films are prone to very high leakage currents. Since the information is stored as charge on a capacitor in the DRAM cell, the loss of this charge through leakage currents is the origin of information loss. The rate of the necessary refresh cycles is directly determined by these leakage currents. A fundamental understanding of the underlying charge carrier transport mechanisms and an understanding of the structural film properties leading to such leakage currents are essential to the development of new, dielectric thin-film materials. Conductive Atomic Force Microscopy (CAFM) is a scanning probe based technique which correlates structural film properties with local electrical conductivity. This method was used to examine the spatial distribution of leakage currents in a comparative study. I was shown that it is sufficient to include an unclosed interlayer of Aluminium oxide into a Zirconium dioxide film to significantly reduce leakage currents while maintaining a sufficiently high capacitance. Moreover, a CAFM was modified and used to examine the switching behavior of a silicon nanowire Schottky barrier field effect transistors in dependence of the probe position. It was proven experimentally that Schottky barriers control the charge carrier transport in these devices. In addition, a proof of concept for a reprogrammable nonvolatile memory device based on charge accumulation and band bending at the Schottky barriers was shown.

Die Sammlung der zwei-dimensionalen (2D) Materialien ist begrenzt, da sehr wenige Verbindungen stabil bleiben, sobald sie nur aus Oberflächen bestehen. Aufgrund ihrer außergewöhnlichen Eigenschaften sind 2D Materialien jedoch nach wie vor überaus begehrt. Vor kurzem wurden atomar definierte, chemisch gesättigte SiO2 Bilagen auf verschiedenen Metalloberflächen präpariert. Eine solche ultradünne Silika-Lage wäre eine vielversprechende Ergänzung zur Familie der 2D Materialien, wenn sie unter Strukturerhalt vom Wachstumssubstrat isoliert werden kann. In dieser Arbeit untersuchen wir die Eigenschaften einer Silika-Bilage im Zusammenhang mit Anwendungen von 2D Materialien. Die Bilage besitzt kristalline und amorphe Regionen, die beide atomar glatt sind. Die kristalline Region besitzt ein hexagonales Gitter mit gleichmäßiger Porengröße, während die amorphe Region einer komplexeren Beschreibung bedarf. In einer Studie von Baublöcken zeigen wir, dass mittelreichweitige Struktureinheiten in Korrelation mit einem Parameter für die Bindungswinkelfrustration auftreten. Das Netzwerk verschiedener Nanoporen stellt eine größenselektive Membran dar, wie wir in einer Adsorptionsstudie zeigen. Pd- und Au-Atome durchdringen den Silikafilm abhängig von der Größe der zur Verfügung stehenden Nanoporen. Der ultradünne Film hält der Einwirkung verschiedener Lösungsmittel stand und die Beständigkeit der Struktur in Wasser wird analysiert. Diese Studien deuten die außergewöhnliche Stabilität dieser Struktur an. Wir entwickeln eine polymerbasierte mechanische Exfoliation, um den Film von seinem Wachstumssubstrat zu entfernen, und zeigen, dass der Film als intakte Einheit vom Substrat abgelöst wird. Wir präsentieren anschließend den Transfer des Silikafilms auf ein TEM-Gitter, wo er schraubenartig gewundene Formen annimmt. Weiterhin wurde der Film auf ein Pt(111)-Substrat transferiert. In diesem Fall wird unter Erhalt der Struktur ein Transfer in der Größenordnung von Millimetern erreicht. / The library of two-dimensional (2D) materials is limited, since only very few compounds remain stable when they consist of only surfaces. Yet, due to their extraordinary properties, the hunt for new 2D materials continues. Recently, an atomically defined, self-saturated SiO2 bilayer has been prepared on several metal surfaces. This ultrathin silica sheet would be a promising addition to the family of 2D materials, if it can be isolated from its growth substrate without compromising its structure. In this work, we explore the properties of a silica bilayer grown on Ru(0001) in the context of 2D technology applications. The bilayer sheet exhibits crystalline and amorphous regions, both being atomically flat. The crystalline region possesses a hexagonal lattice with uniform pore size, while the amorphous region requires a more complex description. In a building block study of the amorphous region, we find that medium range structural patterns correlate with a parameter describing the bond angle frustration. The resulting network of different nanopores represents a size-selective membrane, as illustrated in an adsorption study. Pd and Au atoms are shown to penetrate the silica film selectively, depending on the presence of appropriately sized nanopores. The ultrathin silica film is shown to withstand exposure to different solvents and the stability of the structure in water is analyzed. These studies indicate extraordinary stability of this nanostructure. We develop a polymer assisted mechanical exfoliation method for removing the film from the growth substrate, providing evidence that the film is removed as an intact sheet from the growth substrate. We subsequently present the transfer of the silica bilayer to a TEM grid, where it forms micro-ribbons. Further, the film is transferred to a Pt(111) substrate, where mm-scale transfer under retention of the structure is achieved.