The impact of physical design characteristics on backend dielectric reliability was modeled. The impact of different interconnect geometries on backend low-k time dependent dielectric breakdown was reported and modeled. Physical design parameters that are crucial to backend dielectric reliability were identified. A methodology was proposed for determining chip reliability but combining the insights gathered by modeling the impact of physical design on backend dielectric breakdown. A methodology to model variation in device parameters and characteristics was proposed. New methods of electrical and physical parameter extraction were proposed. Models that consider systematic and random source of variation in electrical and physical parameters of CMOS devices were proposed, to aid in circuit design and timing analysis.

The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional silicon dioxide layer with higher dielectric constant (K) material for gate dielectric. In order to reduce the gate leakage current, and also to maximize gate capacitance, ‘high K’ gate oxide materials such as Al2O3, ZrO2, HfO2, Ta2O5, TiO2, Er2O3, La2O3, Pr2O3, Gd2O3, Y2O3, CeO2 etc. and some of their silicates such as ZrxSi1–xOy, HfxSi1–xOy, AlxZr1–xO2 etc. are under investigation. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternate gate dielectric are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the materials/process used in CMOS devices and (f) reliability. In this study titanium dioxide (TiO2) is chosen as an alternate to silicon dioxide (SiO2). This thesis work is aimed at the study of the influence of process parameters like deposition rate, substrate temperature and annealing temperature on the electrical properties like maximum capacitance, dielectric constant, fixed charge, interface trapped charge and leakage current. For making this analysis we have used p–type single crystal silicon (<100>) as substrates and employed direct current (DC) reactive magnetron sputtering method with Titanium metal as target and Oxygen as reactive gas. TiO2 thin films have been deposited with an expected thickness of 50 nm with different deposition rates starting from 0.8 nm/minute to 2 nm/minute with different substrate temperatures (ambient temperature to 500ºC). Some of the samples are annealed at 750ºC in oxygen atmosphere for 30 minutes. SENTECH make Spectroscopic Ellipsometer is used for analyzing the optical properties such as thickness, refractive index etc. The thicknesses of all the samples that are extracted from the Ellipsometry are varying from 35 ± 2 nm to 50 ± 5 nm. Agilent make 4284A model L−C−R meter along with KarlSUSS wafer probe station is used for the C − V measurements and Keithley make 6487 model Pico ammeter/Voltage source is used for the I−V measurements. MOS capacitors have been fabricated with Aluminium as top electrode to perform the bi directional Capacitance−Voltage and also Current−Voltage analysis. The X–ray diffraction studies on the samples deposited at 500ºC showed that the films are amorphous. Dielectric constant (K) and effective substrate doping concentration (Na), flat band voltage (VFB), hysteresis, magnitude of fixed charges (Qf) as well as interface states density (Dit') and Equivalent Oxide Thickness (EOT) are obtained from the bi directional C−V analysis. A maximum dielectric constant of 18 is achieved with annealed samples. The best value of fixed charge density we have achieved is 1.2 x1011 per cm2 corresponding to the deposition rate of 2.0 nm/minute and with 500ºC substrate temperature. The ranges of Qf values that we have obtained are varying from 1.2x 1011 − 1.0 x1012 per cm2. It was also found that, the samples deposited at higher substrate temperatures show lower Qf values than the samples deposited at lower temperatures. The same trend is observed in case of interface states density also. The range of Dit' values we have obtained are in the range of 1.0 x 1012 cm–2eV–1 to 9x1012 cm–2eV–1. The best value of Dit' we have obtained is 1.0x1012 cm–2 eV–1 for the sample deposited at 0.8 nm/minute deposition rate and with substrate temperature of 400ºC. From the flat band voltage values of different set of samples, it was found that the flat band voltage is decreasing and in turn trying to approach the analytical value for the films deposited at higher deposition rates. The minimum EOT that we have achieved is 11 nm that corresponds to the film, which is annealed at 750ºC in oxygen atmosphere. From the I−V analysis it was found that the leakage current density is increasing with increase in substrate temperature and the same trend is observed with annealed films also. The minimum leakage current density achieved is 1.72x10–6 A/cm2 at a gate bias of 1V (corresponding field of 0.3 MV/cm). From the time dependent dielectric breakdown analysis it was found that the leakage current is exhibiting a constant value during the entire voltage stress time of 23 minutes. From the I–V characteristics it was found that the leakage current is following the Schottky emission characteristics at lower electric fields (< 1MV/cm) and is following the Fowler–Nordheim tunneling mechanism at higher electric fields. Since our aim is to study the electrical properties of titanium dioxide thin films for the application as high K gate dielectric in microelectronic applications more emphasis is given on the electrical properties. The maximum dielectric constant we have achieved is in the comparable range of the values for this parameter. The leakage current density values obtained are higher than the required for the microelectronic devices, where as the interface state density values and fixed charge density values are in the same range of values that are reported with this particular oxide and more care has to be taken to minimize these parameters. The EOT values we have achieved are also falling into the range of values that it actually takes as it was reported in the literature.

Fabrication of artificially structured superlattices, when controlled on a nanoscale level, can exhibit enhanced dielectric properties over a wide temperature range. Possible fabrication of new functional devices based on the parametric values of dielectric constants of these heterostructures was the major motivation behind the work. Chapter 1 gives a brief overview of ferroelectrics; their defining features and their commercial importance to electronic industry. An introduction to ferroelectric superlattices, their technological application and fundamental physics that influence the behavior of superlattices are provided. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, structural, micro structural and physical property measurements is discussed. Chapter 3 involves fabrication of two-component ferroelectric superlattices consisting of Barium Titanate (BTO), and Strontium Titanate (STO) with nanoscale control of superlattice periodicities by high-pressure multi target pulsed laser deposition on Pt (111)/Ti/SiO2/Si (100) substrate. Superlattices with varying periodicities were fabricated and their compositional variation across the thin film and the interface width were studied using Secondary Ion Mass Spectrometry (SIMS). Fabrications of superlattice structure were supported by observation of satellite peaks in XRD corresponding to the coherent heterostructures. The microstructural analysis was carried out using cross-sectional scanning electron microscopy (SEM), and contact mode-AFM was used to image surface morphology and root-mean-square (rms) roughness of the thin film heterostructure. Chapter 4 deals with ferroelectric studies of BTO/STO superlattices. The size dependent polarization behaviors of the superlattices are shown. The experimental realization of the dimensional range in which, the long-range coupling interaction dominates the overall polarization behavior of the system was studied. The dependence of average spontaneous polarization on the individual layer thickness, temperature and the dimensional range of interaction are discussed. The enhanced non-linear behaviors of the films were measured in terms of tunability. The dielectric phase transition behavior of superlattice structures of different periodicities was studied. Chapter 5 focuses on fabrication of three-component ferroelectric superlattices consisting of Barium Titanate (BTO), Calcium Titanate (CTO) and Strontium Titanate (STO). The fabrications of superlattice structures were confirmed by the presence of satellite reflections in XRD analysis and a periodic concentration of Sr, Ba and Ca throughout the film in Depth profile of SIMS analysis. The microstructural analysis was carried out using cross-sectional scanning electron microscopy (SEM), and contact mode-AFM was used to image surface morphology and root-mean-square (rms) roughness of the thin film heterostructure. The dielectric characteristic and polarization properties of the system are discussed. Large variations of lattice distortion in the consisting layers were achieved by varying the stacking sequence and superlattice periodicity. The influence of interfacial strain on enhancement of ferroelectric polarization was studied. The size dependence and the role of interfaces in the observed enhancements of the dielectric behaviors were highlighted. The tunability of about 55% was achieved in these systems and was higher than any of the single polycrystalline thin film of the constituent materials reported till date. The enhanced dielectric properties were thus discussed in terms of the interfacial strain driven polar region due to high lattice mismatch and electrostatic coupling due to polarization mismatch between individual layers. Chapter 6 deals with the dielectric response, impedance spectroscopy and the DC leakage characteristics of the superlattice structures. All the heterostructures fabricated, exhibited low frequency dispersion, similar to that of the Jonscher’s universal type of relaxation behavior. The anomalous dispersion was observed in the imaginary dielectric constant at high frequencies. A Debye type relaxation behavior was observed in the impedance analysis at low temperatures, whereas, a departure from ideal ‘Debye’ type was noticed as the temperature was increased. The leakage currents of all the heterostructures were found to be a few orders less than the homogeneous single layer thin films. A space charge limited conduction was observed in al the superlattice structures fabricated. Chapter 7 summarizes the present study and discusses about the future work that could give more insight into the understanding of the ferroelectric perovskite heterostructures.

Thesis (Ph. D.)--Ohio State University, 2007. / Title from first page of PDF file. Includes bibliographical references (p. 166-181).

Τα Νανοσύνθετα συστήματα πολυμερικής μήτρας – σιδηροηλεκτρικών ή πιεζοηλεκτρικών σωματιδίων (κεραμικά εγκλείσματα) αναμένεται να αποτελέσουν μια νέα γενιά υψηλού τεχνολογικού ενδιαφέροντος που θα επιδεικνύουν λειτουργικές ιδιότητες λόγω της ποικίλης πόλωσης των κεραμικών νανοσωματιδίων. Η διασπορά κεραμικών εγκλεισμάτων στο εσωτερικό πολυμερικής μήτρας προσδίδει στα σύνθετα συστήματα βελτιωμένη μηχανική και ηλεκτρική συμπεριφορά. Τέτοιου τύπου συστήματα υλικών, που έχουν υψηλή ηλεκτρική διαπερατότητα (high-Κ materials) χρησιμοποιούνται σε ηλεκτρονικές εφαρμογές, καθώς μειώνουν τα ρεύματα διαρροής και παράλληλα λειτουργούν ως ενσωματωμένοι νανο-πυκνωτές και αισθητήρες ακουστικών εκπομπών. Η ηλεκτρική απόκριση τους, εκφράζεται κυρίως μέσω της ηλεκτρικής διαπερατότητας και μπορεί να ρυθμιστεί, ελέγχοντας τον τύπο, το μέγεθος και την ποσότητα της κεραμικής ενίσχυσης. Η ενσωμάτωση σιδηροηλεκτρικών ή πιεζοηλεκτρικών κρυστάλλων, που επιδεικνύουν υψηλή πόλωση, σε μια πολυμερική μήτρα, όπως η εποξειδική ρητίνη – που εν γένει είναι ηλεκτρικός μονωτής- με χαμηλή ηλεκτρική διαπερατότητα και υψηλή διηλεκτρική αντοχή μπορεί να οδηγήσει στην ανάπτυξη ενός ευφυούς συστήματος. Σκοπός αυτής της εργασίας είναι η παρασκευή και ο χαρακτηρισμός σύνθετων πολυμερικών συστημάτων εποξειδικής ρητίνης – νανοσωματιδίων τιτανικού ψευδάργυρου (ZnTiO3) καθώς και σύνθετων υβριδικών συστημάτων εποξειδικής ρητίνης - νανοσωματιδίων τιτανικού ψευδάργυρου (ZnTiO3) και τιτανικού βαρίου (BaTiO3) ώστε να οδηγηθούμε σε ένα σύστημα υλικών με βέλτιστη συμπεριφορά. Στο θεωρητικό κομμάτι αυτής της εργασίας συζητούνται βασικές έννοιες και θεωρίες που αφορούν τα σύνθετα υλικά, τη θεωρία των διηλεκτρικών και ενεργών διηλεκτρικών, την ηλεκτρική συμπεριφορά σύνθετων υλικών με πολυμερική μήτρα καθώς και πειραματικές τεχνικές χαρακτηρισμού. Στο πειραματικό μέρος, νανοσύνθετα πολυμερικά συστήματα παρασκευάστηκαν από εποξειδική ρητίνη και νανοσωματίδια ZnTiO3 και BaTiO3. Η μέση διάμετρος σωματιδίων βάσει των προδιαγραφών του προμηθευτή ήταν λιγότερο από 100nm για το ZnTiO3 και στην περιοχή των 30 - 50nm για το BaTiO3. Στη συνέχεια τα νανοσύνθετα υποβλήθηκαν σε μορφολογικό, θερμικό και ηλεκτρικό χαρακτηρισμό. Η μορφολογία των δειγμάτων εξετάστηκε για τυχούσα παρουσία κενών (voids) και συσσωματωμάτων (clusters) μέσω του Ηλεκτρονικού Μικροσκοπίου Σάρωσης (SEM) και η θερμική τους απόκριση μέσω της Διαφορικής Θερμιδομετρίας Σάρωσης (DSC). Η διασπορά των κεραμικών εγκλεισμάτων θεωρήθηκε ικανοποιητική, παρόλο που συνυπάρχουν οι νανοδιασπορές με συσσωματώματα. Οι διηλεκτρικές ιδιότητες και τα σχετιζόμενα φαινόμενα διεργασιών χαλάρωσης μελετήθηκαν με χρήση της Διηλεκτρικής Φασματοσκοπίας Ευρέως Φάσματος (BDS) στο εύρος θερμοκρασιών -100 oC έως 160 oC και στο διάστημα συχνοτήτων 10-1 Hz έως 106 Hz. Η ανάλυση των πειραματικών αποτελεσμάτων διεξήχθη με τη χρήση των φορμαλισμών της ηλεκτρικής διαπερατότητας και του ηλεκτρικού μέτρου. Από τα πειραματικά αποτελέσματα προκύπτει πως παρατηρούνται διηλεκτρικές χαλαρώσεις που οφείλονται τόσο στην πολυμερική μήτρα, όσο και στην ενισχυτική φάση. Τα φάσματα των υβριδικών συστημάτων καταγράφουν τουλάχιστον τέσσερεις διακριτούς τρόπους χαλάρωσης. Αυτά αποδίδονται στη διεπιφανειακή πόλωση (Interfacial Polarization ή φαινόμενο MWS) μήτρας/εγκλεισμάτων, στην α- χαλάρωση λόγω υαλώδους μετάβασης του πολυμερούς και στην β- και γ- χαλάρωση εξαιτίας της κίνησης πλευρικών πολικών ομάδων και τοπικής κίνησης μικρών τμημάτων της πολυμερικής αλυσίδας. Η λειτουργικότητα των νανοσύνθετων σχετίζεται με την μεταβολή της πόλωσης, που σχετίζεται ευθέως με το πραγματικό μέρος της ηλεκτρικής διαπερατότητας, την εξάρτηση της ειδικής αγωγιμότητας από την θερμοκρασία και την περιεκτικότητα σε ενισχυτικό μέσο και την δυνατότητα αποθήκευσης ενέργειας. / Nanocomposite systems, which include ferroelectric or piezoelectric particles represent a novel class of materials which are expected to exhibit functional properties because of the varying polarization of the ceramic particles. Dispersing ceramic inclusions within a polymer matrix, results in enhanced mechanical and electrical behavior. Such material systems exhibiting enhanced electrical response are used in electronic applications, for the reduction of leakage currents, as integrated nano- capacitors and as acoustic emission sensors. The electrical response of these composites, namely dielectric permittivity and conductivity can be tailored, by controlling the type, the size and the amount of ceramic inclusions. The ceramic filler could be ferroelectric and/or piezoelectric crystal particles. Their high level of polarization can be combined with a polymer host, like an epoxy resin – which is, in general, electrical insulator – with low dielectric permittivity and high dielectric breakdown strength. This combination could lead in the development of a smart materials’ system. The aims of this work are the preparation and characterization of epoxy resin nanocomposites with embedded zinc titanate (ZnTiO3) and nanoparticles and in tandem hybrid system of epoxy resin– zinc titanate (ZnTiO3) and barium titanate (BaTiO3) nanoparticles. In the first part of this work basic aspects concerning composite materials, dielectric theory, electrical behaviour and characterization techniques of polymer matrix composites are presented. In the experimental part of this study, nanocomposites were prepared by employing commercially available materials such as epoxy resin, ceramic ZnTiO3 and BaTiO3 nanopowder. The mean particle diameter, as indicated by the supplier, was less than 100nm for ZnTiO3 and 30-50nm for BaTiO3 particles. Furthermore, morphology, thermal and electrical response of the produced specimens was examined. The morphology of the specimens was checked for voids and clusters, by means of Scanning Electron Microscopy and the thermal response via Differential Scanning Calorimetry (DSC). Ceramic particles distribution is considered as satisfactory, although clusters co-exist with nanodispersions in all the examined systems. The dielectric properties and the related relaxation phenomena were studied by means of Broadband Dielectric Spectroscopy (BDS) in the temperature range from -100 oC to 160 oC and frequency range from 10-1 Hz to 10-6 Hz. Experimental data analysis was conducted by means of dielectric permittivity and electric modulus formalisms. Based on the conducted analysis, the recorded relaxation phenomena include contributions from both the polymeric matrix and the reinforcing phase. In the spectra of hybrid nanocomposites at least four relaxation processes can be detected. They were attributed to Interfacial Polarization phenomenon (MWS effect), α-mode due to glass/rubber transition of the polymer and β- , γ- modes resulting from the motion of polar side groups and local motion of small segments of the polymer chain. The functionality of the nanocomposite systems is related to the variation of polarization, which is directly connected to the real part of dielectric permittivity, the dependence of conductivity on the temperature and the filler content, and the energy storage efficiency expressed by the density of energy.

Piezoelectric materials find use as actuators and sensors in automotive, aerospace and other related industries. Automotive applications such as fuel injection nozzles and engine health monitoring systems require operating temperatures as high as 300-500 oC. The commercially used piezoelectric material PbZr1-xTixO3 (PZT) is limited to operating temperatures as low as 200 oC due to the temperature induced depolarization effects. PZT, in the undoped state exhibits a piezoelectric coefficient (d33) of 223 pC/N and ferroelectric-paraelectric transition temperature (Tc) of 386 oC. The enhanced properties of PZT occur at a region between the tetragonal and rhombohedral phases, called the Morphotropic Phase Boundary (MPB). Therefore, search for new materials with higher thermal stability and better sensing capabilities were focused on systems that exhibit a PZT-like MPB. This led to the discovery of (x)BiScO3-(1-x)PbTiO3 (BSPT), which exhibits an MPB with enhanced Tc (450 oC) and exceptionally high piezoelectric response (d33 = 460 pC/N). Theoretical studies have shown that the mechanism of enhanced piezoresponse in ferroelectric systems is related to the anisotropic flattening of the free energy profiles. An alternative view point attributes the anomalous piezoelectric response to the presence of high density of low energy domain walls near an inter-ferroelectric transition. Diffraction is a versatile tool to study the structural and microstructural changes of ferroelectric systems upon application of electric field. However, characterization of electric field induced structural and microstructural changes is not a trivial task, since in situ electric field dependent diffraction studies almost invariably give diffraction patterns laden with strong preferred orientation effects, due to the tendency of the ferroelectric/ferroelastic domains to align along the field direction. Additionally, diffraction profiles of MPB compositions exhibit severe overlap of Bragg peaks of the coexisting phases, and hence, it is difficult to ascertain with certainty, if the alteration in the intensity profiles upon application of electric field is due to change in phase fraction of the coexisting phases or due to preferred orientation induced in the different phases by the electric field. The characterization of electric field induced phase transformation in MPB systems, has therefore eluded researchers and has been considered of secondary importance, presumably due to the difficulties in unambiguously establishing the structural changes upon application of electric field. In fact, majority of the in situ electric field dependent diffraction studies have been carried out on compositions just outside the MPB range, i.e. on single phase compositions. In such studies, the focus has been mainly on explaining the piezoelectric response in terms of motions of the non-180° domain walls and field induced lattice strains. In this dissertation, the BSPT system has been systematically investigated with the view to understand the role of different contributing factors to the anomalous piezoelectric response of compositions close to the MPB. Using a comparative in situ electric field dependent diffraction study on a core MPB composition exhibiting highest piezoelectric response and a single phase monoclinic (pseudo-rhombohedral) composition just outside the MPB, it is demonstrated that, inspite of the significantly large domain switching and lattice strain (obtained from peak shifts) in the single phase composition, as compared to the MPB composition, the single phase composition shows considerably low piezoelectric response. This result clearly revealed that the anomalous piezoelectric response of the MPB composition is primarily associated with field induced inter-ferroelectric transformation and the corresponding field induced interphase boundary motion. A simple strategy has been employed to establish the field induced structural transformation for the MPB compositions, by overcoming the experimental limitation of in situ electric field dependent diffraction studies. The idea stemmed from the fact that, if the specimens for diffraction study can be used in powder form instead of pellet, the problems associated with preferred orientation effects can be eliminated, and the nature of field induced structural changes can be accurately determined. A comparative study of the diffraction profiles from poled (after subjecting the specimen to electric field) and unpoled (before subjecting the specimen to electric field) powders could precisely establish the nature of electric field induced phase transformation for the MPB compositions of BSPT and provided a direct correlation between the electric field induced structural changes and the enhanced piezoelectric response. A new ‘powder poling’ technique was devised, which involves application of electric field to powder form of the specimen. Using this technique, it was possible to study separately, the effect of stress and electric field on the nature of structural transformation. A unique outcome of this study was, it could demonstrate for the first time, analogous nature of the stress and electric field induced structural transformation. A comparative study of the dielectric response of poled and unpoled samples was used to show a counterintuitive phenomenon of field induced decrease in polarization coherence for the MPB compositions. This approach was used to suggest that the criticality associated with the MPB extends beyond the composition boundary conventionally reported in literature based on bulk diffraction techniques (x-ray and neutron powder diffraction). The layout of the dissertation is as follows: Chapter 1 gives a brief introduction of the fundamental concepts related to ferroelectric materials. The theories that explain the enhanced piezoresponse of MPB based ferroelectric systems have been outlined. Detailed information of the existing literature is presented in the relevant chapters. Chapter 2 presents the details of the solid state synthesis of BSPT compositions and structural analysis using diffraction studies. The dielectric measurements were used to establish the Tc for the different compositions. The enhanced ferroelectric and piezoelectric properties were observed for the MPB compositions, which were shown to exhibit coexistence of tetragonal and monoclinic phases from structural studies. The critical MPB composition exhibiting highest piezoelectric and ferroelectric properties was established to be x = 0.3725. The thermal stability of the critical MPB composition was established to be 400 oC using ex situ thermal depolarization studies. The common approach of structural analysis in the unpoled state failed to provide a unique relationship between the anomalous piezoelectric response and the structural factors at the MPB, emphasizing the need to characterize these system using electric field dependent structural studies. Chapter 3 presents the results of in situ electric field dependent diffraction measurements carried out at Argonne National Laboratory, USA. The quasi-static field measurements could successfully quantify the non-180o domain switching fractions and the field induced lattice strains. The changes in the integrated intensities were used to obtain the non-180o domain switching fraction and the shift in peak positions were used to quantify the field induced lattice strains. The in situ studies could successfully explain the macroscopic strain response for the single phase pseudo-rhombohedral (monoclinic) composition on the basis of domain switching mechanisms and field induced lattice strains. The MPB compositions were shown to have additional contributions from interphase boundary motion, resulting from change in phase fraction of the coexisting phases. The results emphasized the need to investigate the electric field induced transformation for MPB compositions, in order to give a comprehensive picture of the various contributions to the macroscopic piezoreponse. While Rietveld analysis could be used to investigate the phase transformation behaviour upon application of electric field, textured diffraction profiles obtained using in situ studies, in addition to the severely overlapping Bragg reflections of the coexisting phases for the MPB compositions hindered reliable estimation of the structural parameters. An alternate approach to investigate the field induced phase transformation is presented in Chapter 4. The stroboscopic measurements on the MPB composition showed evidence of non-180o domain wall motion even at sub-coercive field amplitudes as low as 0.1 kV/mm. Chapter 4 presents the results of the ex situ electric field dependent structural study, wherein the diffraction profiles collected from poled powders is compared to that of unpoled powders. The diffraction profiles from the poled powders did not exhibit any field induced crystallographic texture and could successfully be analyzed using Rietveld analysis. High resolution synchrotron diffraction studies (ESRF, France) carried out on closely spaced compositions revealed that, the composition exhibiting the highest piezoelectric response is the one, which exhibits significantly enhanced lattice polarizability of both the coexisting (monoclinic and tetragonal) phases. The enhanced lattice polarizability manifests as significant fraction of the monoclinic phase transforming irreversibly to the tetragonal phase after electric poling. The monoclinic to tetragonal transformation suggested the existence of a low energy polarization rotation pathway towards the [001]pc direction in the (1 1 0)pc pseudocubic plane of the monoclinic phase. The results are discussed on the basis of the existing theories that explain piezoresponse in MPB systems and are in support of the Polarization rotation model, in favor of a genuine monoclinic phase. Chapter 5 discusses the ferroelectric-ferroelectric stability of the MPB compositions in response to externally applied stress and electric field independently. Using the newly developed ‘powder poling’ technique, which is based on the concept of exploiting the irreversible structural changes that occur after application of electric field and stress independently, it was possible to ascertain that, both moderate stress and electric field induce identical structural transformation - a fraction of the monoclinic phase transforms irreversibly to the tetragonal phase. The powder poling technique was also used to demonstrate field induced inter-ferroelectric transformation at sub-coercive field amplitudes. In addition, the analysis of the dielectric response before and after poling revealed a counterintuitive phenomenon of poling induced decrease in the spatial coherence of polarization for compositions around the MPB and not so for compositions far away from the MPB range. Exploiting the greater sensitivity of this technique, it was demonstrated that, the criticality associated with the inter-ferroelectric transition spans a wider composition range than what is conventionally reported in the literature based on bulk x-ray/neutron powder diffraction techniques. Chapter 6 presents the closure and important conclusions from the present work and summarizes the key results, highlighting the proposed mechanism of enhanced piezoresponse in BSPT. The last part of the chapter deals with suggestions for future work from the ideas evolved in the present study. vi

High dielectric constant materials have tremendous impact on miniaturization of devices that are used in various applications like wireless communication systems, microelectronics, global positioning systems, etc. To store electric charge in a very small space necessarily needs a capacitor with very high dielectric constant. Thus, these materials are very important in fabricating capacitors, or metal oxide semiconductor filed effect transistor (MOSFET). Among the existing commercially available devices, silicon-based microelectronic devices are commonly used based on the moderately stable dielectric constants of silicon with low losses and minimal temperature and frequency dependence. However, now-a-days, the perovskite based transition metal oxides have drawn attention that have the ability to fulfill all the requirements for being a good dielectric material in all the industrial applications. In this thesis we have studied a few selected perovskite based transition metal oxide systems in terms of their dielectric and magnetic behaviour. In Chapter 1, we have have given brief introductions about the some application of dielectric materials and the origin of dielectric and magnetic properties in the materials. We have also discussed about the polarisation in the dielectric materials to understand it’s frequency dependence and also to formalise different relaxation behaviour with the help of physical and mathematical explanation. In Chapter 2, we describe the various methodologies adopted in this thesis. In Chapter 3, we have studied the dielectric behaviour of Nd2NiMnO6, a rare earth based double perovskite ferromagnetic insulator. We successfully synthesised and characterised the compounds, settled the valency issues with the help of temperature dependent XAS of the transition metal atom in contrast to the existing controversy available in literature. We have found that this material shows relaxor kind behaviour with a colossal dielectric constant value. We have studied in details the origin of the colossal dielectric constant and the relaxation behaviour along with the a.c and d.c. transport properties. We have shown the origin of the ferromagnetism (TC ∼ 200 K) with a low temperature antiferromagnetic ordering (TN ∼ 55 K) with the help of detailed studies of temperature dependent d.c., a.c. magnetism and their XMCD. We have also investigated the isothermal variation of magnetodielectric and magnetoresistance behaviour as a function of magnetic field and their origin. In Chapter 4,we study the effect of cation anti-site disorder on the magnetic, dielectric and transport properties of another rare earth based ferromagnetic double perovskite insulator La2NiMnO6 by controlling different extent of anti-site disordered. We have confirmed the valency of the transition metal cations using XAS technique and followed by shown, different types of magnetic interaction between the transition metal cations using d.c magnetic, quantitative XMCD analysis and the origin of large dielectric response, a.c. transport & dielectric relaxation using temperature variation dielectric measurement as an experimental evidence in contrast of our previous speculation published in literature. We further have studied, the coupling between the magnetic and electric spin through isothermal magnetodielectric measurement. In Chapter 5, we have successfully synthesised and characterised a solid solution of YMnxIn1−xO3 series via different mol % of In doping in the multiferroic YMnO3 system. YMnO3 is a well known multiferroic material studied rigorously during past few decades. We have seen, YMnO3 which has a antiferromagnetic ordering temperature of ∼ 75 K suppressed with increasing the dopant concentration In. We have figured out the effect of In doping in the suppression of multiferroic phase and extended it to the dielectric properties. We have found that, the temperature dependence of dielectric constant shows an anomaly at the magnetic ordering temperature and studied magnetodielectric coupling. We have also investigated the temperature variation of dielectric relaxation and a.c. transport behaviour as a function of composition. In Chapter 6, we have identified the phase seperation and proposed a phase diagram as function of Gd doping in the Ho2−xGdxCuTiO6 double perovskite, where two end member, namely Ho2CuTiO6 and Gd2CuTiO6 are found to be in two different crystallographic phase as, hexagonal (P63cm) and orthorhombic (Pnmm), respectively. We have characterised the valency of the transition metal cations using XAS.We have seen very less temperature and frequency dependence of dielectric constant in hexagonal phase in compare to the orthorhombic phase and tried to figuring out from experimental analysis by performing temperature dependence dielectric const measurement. We also have shown the effect of doping in the origin of dielectric relaxation, a.c transport and magnetic behaviour of this system. In Chapter 7, we have synthesised and characterised successfully two different rare earth based layered perovskite La3Cu2VO9 and La4Cu3MoO12 compounds are of centrosymmetric space group. We have figured it of the valency of the different atoms present in the compound using XAS. We also do have observed the good temperature stability of dielectric constant of these materials and explored origin of mechanism in the dielectric relaxation, a.c. transport property by performing the temperature dependance dielectric measurement. The magnetic structure also have shown with the help of d.d. magnetic measurements. In Appendix A, we have seen the very stable dielectric constant constant from very low to above room temperature of the 2D nano PbS. The frequency stability of dielectric constant is also remarkable in compare to bulk PbS values available in literature. We have explored the origin of the conductivity and relaxation mechanism performing dielectric constant measurement. In conclusion, we investigate, in this thesis, dielectric properties of different transition metal oxides system and the mechanism of dielectric relaxation, a.c, d.c transport and their origin of magnetic response.

Made available in DSpace on 2016-12-08T15:56:18Z (GMT). No. of bitstreams: 1 Luiz Antonio Alves.pdf: 4887074 bytes, checksum: 2921556dad24ae9311fe651e5a0ccdcf (MD5) Previous issue date: 2014-07-14 / Conselho Nacional de Desenvolvimento Científico e Tecnológico / Titanium nitride (TiN) films with niobium (Nb) addition (TiN[Nb], 0,01 < Nb/Ti < 0,15) were obtained by sputter deposition in a triode magnetron sputtering system from a mosaic target of titanium with niobium inserts at the erosion zone. The effects of Nb/Ti in surface morphology were analyzed by atomic force and confocal microscopy measurements. The reflectivities of the films with niobium incorporation are in agreement with the Drude-Lorentz model. The constants obtained by the fitting show an increase in plasma frequency and relaxation time with increased Nb/Ti ratio, indicating an increase in the number of charge carriers. The color parameters according CIELab system show an increase in L*, a* and b* coordinates. The visual analysis indicates an increased red tone when compared with pure TiN film in agreement with the increased absolute values of a* coordinates. / Filmes de nitreto de titânio com adição de nióbio ((TiN[Nb], 0,01 < Nb/Ti < 0,15) foram depositados pelo processo de pulverização catódica utilizando um sistema Triodo Magnetron Sputtering. A pulverização catódica de Titânio e Nióbio foi feita a partir de um alvo de titânio com insertos de nióbio dispostos na região de erosão. Foram analisados os efeitos da razão Nb/Ti na morfologia superficial do filme através de microscopia de força atômica e confocal. As medidas de refletividade dos filmes de TiN[Nb] obedecem perfeitamente o modelo de Drude-Lorentz. As constantes obtidas pelo modelo de Drude-Lorentz mostram um aumento nos valores da frequência de plasma e tempo de relaxação com o aumento na razão Nb/Ti, indicando que a presença de nióbio aumenta o número de portadores de carga. Os parâmetros de cor segundo o sistema CIELab mostram um aumento nas coordenadas L*, a* e b*. A análise visual das amostras mostra uma tonalidade avermelhada, quando comparadas com o filme contendo somente TiN, em concordância com o aumento absoluto nas coordenadas a*.

The work carried out as a part of this thesis has been focussed on understanding different aspects of the chemical vapor deposition process namely, ALD / MOCVD. A large part of the thesis is aimed at solving the problem of a single-source precursor for the MOCVD process to obtain substituted metal oxide thin films. For a chemical vapor deposition technique, it is important to understand the requisite salient features of precursor for deposition of thin films. For this purpose, not only is the structural characterization of the chemical precursor is required but also an in-depth thermal analysis of the precursor to know its vapor pressure. Vapor pressure of a metalorganic complex is one of the important properties to evaluate the applicability of a metalorganic complex as a MOCV/ALD precursor. The thesis discusses a novel approach to use thermal analysis as a tool to gauge the viability of substituted metal “single source” precursor for MOCVD/ALD. The other half deals with material characterization of thin films grown by an ALD process using hydrogen and Ti(OiPr)2(tbob)2 as precursors. The films were further studied for their potential application as high-k dielectric in DRAM applications. The first chapter is an overview of topics that are relevant to the work carried out in this thesis. The chapter focuses on the description of techniques used for thin film deposition. A detailed review of CVD-type techniques (ALD/ MOCVD) is then given. Chapter1 reviews the various process parameters involved in ALD,i.e. film growth(specifically as a function of the reactant pulse length, the nature of the chemical reactant/precursor and that of the metal precursor, and purge length) and growth temperature. Following the discussion of ALD, CVD and its growth kinetics are also discussed. Chapter 1 then outlines a holistic understanding of precursors, followed the differences in requirement for using them in ALD and MOCVD. Further, an introduction to the titanium oxide (Stoichiometric titanium dioxide and various Magneli phases) system, its phase diagram, oxide properties and their applications is given. Chapter 1 concludes by delineating the scope of the work carried out which is presented in the thesis. The second chapter deals with the synthesis of a series of substituted metal “single source” precursors to be used for MOCVD of substituted metal oxides thin films. The precursor complexes were of the type AlxCr1-x (acac)3 where 0<x<1. The complexes were synthesized using the novel approach of co-synthesis and were characterized by various spectroscopic techniques. Single crystal X-ray diffraction at low temperature was carried out to understand the substitution of metal in the complex crystallographically. The substituted metal complexes synthesized and characterized in chapter 2 were further evaluated for their viability as single source precursors for MOCVD application, using thermo-gravimetry as discussed in chapter 3. Vapor pressure of these complexes was determined by using the Langmuir equation, while the enthalpies of submission and evaporation were calculated using the Clausius-Clapeyron equation. One of the composition of the series of substituted metal complexes, viz., Al0.9Cr0.1(acac)3, was employed on MOCVD reactor as precursor to obtain thin films on three substrates, Si(100), fused silica, and polycrystalline x- alumina, simultaneously. The resultant thin films were characterized using XRD, electron microscopy, FTIR, EDS, X-ray mapping, and UV-vis spectroscopy. Chapter 4 deals with the growth of titanium oxide thin films using ALD. The metal precursor used was Ti(OiPr)2(tbob)2 and the reactant gas was hydrogen. Hydrogen, a reducing gas, was deliberately used to obtain the reduced defect oxide phases of titanium, commonly called Magneli phases. The growth rate of films grown on p-Si(100) was studied with respect to the substrate temperature, vaporizer temperature, pulse duration of metal precursor and pulse duration of the reactive gas. Also, the concept of complementarity of a reaction and self-limiting behavior in a true ALD process was illustrated. The deposition conditions such as substrate temperature and reactive gas flows have been varied to optimize the phase content and the morphology of the films. The films grown were characterized to determine the various phases of titanium oxide present using XRD, TEM, FTIR spectroscopy, Raman spectroscopy, and UV-vis spectroscopy. The presence of carbon was revealed by Raman spectroscopy. By using these characterization techniques, it was concluded that the film grown is a composite made of stiochiometric TiOx matrix embedded with crystallites of (reduced) Magneli phases. Chapter 5 deals with the electrical properties of the composite thin films grown in chapter 4. the films behave as percolative capacitor which could be used for application as novel high-k dielectric material for DRAM. The effect of change in flow rates of reactive gas (H2) on the dielectric constant (k) and leakage current of the film were studied. It was found that phase composition of the film plays an important role in tuning the dielectric properties of the film was also studied. The effect of thickness of the film also studied on the dielectric properties of the film. The trend observed was correlated to the morphology of the film as a function of its thickness and the grain growth mechanism as observed from high resolution scanning electron microscopy. Further, the effect of change in substrate temperature, metal precursor pulse length, and of the metal used as top electrode, on C-V and I-V characteristics were studied. It was interesting to see that the presence of the more conductingTi5O9 (than Ti3O5) enhances the dielectric constant, which is a requisite for a high-k material for DRAM application. On the other hand, the presence of Ti5O9 also increased the leakage current in the film, which was not desirable. It therefore suggested itself that an optimum embedment of Ti5O9 in the composite helps in enhancing the dielectric constant, while maintaining a low leakage current. Under optimum conditions, a dielectric constant of 210 at 1MHz was measured with a leakage current of 17 nA. The effect of the presence of carbon in the film was studied using Raman Spectroscopy, and it was found that a high leakage was associated with films having greater carbon content. In this chapter, electrical properties of composite thin films were also compared with those of stoichiometric titanium dioxide (a known dielectric). Further, a multilayer sandwich structure was proposed, such that it had a 53 mm thick stoichiometric TiO2 layer followed by 336nm thick composite film and again a 53nm thick stoichiometric titanium dioxide layer. The dielectric characteristics of this structure were found to be better than those of either of the other two.viz., stoichiometric titanium dioxide film or the composite thin film of titanium oxide.

Transformers are the most expensive and critical asset in any electrical power network. Their failure results in long interruption of power supply with consequent loss of reliability and revenue. Understanding and detection of the failure mechanism helps in avoiding catastrophic failures, unplanned outages and improving the power system reliability. Oil impregnated paper (OIP) and pressboards form the main soild insulation in a transformer. Life of the transformer is governed mostly by the life of OIP insulation. Until recently, it was thought that ageing of the OIP insulation in power transformer and its eventual failure, is mainly a function of temperature and electrical stresses. However, it has now been realized that the moisture causes rapid degradation of OIP and needs a special attention. Considering its practical relevance, this research program was formulated with goals: (i) to study the ageing of OIP insulation under temperature and moisture stresses, (ii) to seek correlation between diagnostic ageing indices and end-of-life (EOL) and (iii) to develop a life model for OIP considering moisture along with the thermal stress. Observing that working with actual transformers or even the prototypes are rather inordinately expensive, experiments were conducted with paper strips immersed in oil in test tubes with paper to oil ratio kept same as that in power transformers. In order to cater for the statistical nature of the phenomena, adequate numbers of test specimens were employed (25 numbers for each experiment). Experiments were conducted for two years at temperatures 90°C, 110°C & 120°C and moisture 1%, 2% & 3%. Following the literature, the degree of polymerization (DP) was chosen as the primary index for ageing. As measurement of DP is not only destructive, but also impractical on most of the working transformers, with an aim to develop suitable diagnostic indices for ageing, 2-furfural (2-FAL) and oxides of carbon (CO and CO2) were also measured. Empirical relation between ageing and amount of stresses and time have been deduced for the relevant range. Limiting value of these indices to prescribe the end-of-life, as well as, their correlation with DP have been worked out and reported. In order to bring the role of moisture explicitly, based on earlier work on multi-stress ageing, a multiplicative power law supplementing the Arrhenius factor is envisaged. Accordingly, a phenomenological combined stress model involving the time to failure, temperature, and moisture content is deduced. Based on the experimental results, this model is statistically validated and the values of parameters appearing in the model is obtained. Thus the combined stress model enables one to estimate the life of OIP insulation at any temperature and moisture under synergy. In summary, this work through experimental and analytical approach has contributed to the evaluation of the aging of OIP insulation used in power transformers under the combined action of moisture and temperature.