Práce se zabývá buzením vyšších módů v kvádrových a válcových dielektrických rezonátorových anténách pro účely zvýšení zisku. Pomocí numerických simulací jsou studovány vlastnosti a limity anténních prvků. Je zkoumáná vzájemní vazba mezi dielektrickými rezonátorovými anténami pracujícími s vyššími vidy a na základě výsledků je možno usuzovat o vhodnosti těchto prvků k popužití v anténních řadách. V práci je popsán analytický model efektivní permitivity perforovaných dielektrik, který respektuje anizotropní povahu tohoto materiálu. Model je založen na Maxwell Garnettové aproximácií nehomogenních materiálů. Dále jsou studovány povrchové vlny na perforovaných substrátech a je ověřena použitelnost teoretického modelu i v tomto případě. Nakonec jsou studovány dielektrické rezonátorové antény vytvořené pomocí perforací v dielektrickém substrátu a je demonstrováno zhoršení určitých vlastností takových antén.

The submitted thesis describes characteristics and use of the ferroelectric material which has their utilization in electronics and electro technical industry. The thesis describes behaviour ferroelectrics in temperature range. A suitable workplace was designed and its functionality was verified in selected ferroelectrics samples dependence of temperature of components of complex permittivity.

This thesis deals with problems of electrical insulation materials based on epoxy composites used in the electronics industry. This thesis is divided into theoretical part focused on composite materials, their technological processing and diagnostics. It also describes dielectric materials, their properties and events taking place in their structure. The experimental section describes the measurement of electrical properties of samples of electrical insulating materials with different types of fillers.

Im Laufe der Verkleinerungen integrierter Schaltungen ergab sich die Notwendigkeit der alternativen dielektrischen Materialen. Hohe Polarisierbarkeiten in diesen dielektrischen Dünnfilmen treten erst in hoch direktionalen kristallinen Phasen auf. Aufgrund der erschwerten Integrierbarkeit von epitaktischen, einkristallinen Oxidfilmen können nur poly-, beziehungsweise nanokristalle Filme eingesetzt werden. Diese sind jedoch mit hohen Leckströmen behaftet. Weil die Information in einer DRAM-Zelle als Ladung in einem Kondensator gespeichert wird ist der Verlust dieser Ladung durch Leckströme die Ursache für Informationsverluste. Die Frequenz der notwendigen Auffrischungszyklen einer DRAM-Zelle wird direkt durch die Leckströme bestimmt. Voraussetzungen für die Entwicklung neuer dielektrischer Materialien ist das Verständnis der zugrunde liegenden Ladungsträgertransportmechanismen und ein Verständnis der strukturellen Schichteigenschaften, welche zu diesen Leckströmen führen. Conductive atomic force Microscopy ist ein Rastersondenmethode mit der strukturelle Eigenschaften mit lokaler elektrischer Leitfähigkeit korreliert wird. Mit dieser Methode wurde in einer vergleichenden Studie die räumlichen Leckstromverteilungen untersucht. Und es wurde gezeigt, dass es genügt eine nicht geschlossene Zwischenschicht Aluminiumoxid in eine Zirkoniumdioxidschicht zu integrieren um die Leckströme signifikant zu reduzieren während eine ausreichend hohe Kapazität erhalten bleibt. Darüberhinaus wurde ein CAFM modifiziert und benutzt um das Schaltverhalten eines Siliziumnanodrahtschottkybarrierenfeleffektransistor in Abhängigkeit der Spitzenposition zu untersuchen. Es konnte experimentell bestätigt werden das die Schottkybarrieren den Ladungstransport in diesen Bauteilen kontrollieren. Darüber hinaus wurde ein proof-of-concept für eine umprogrammierbaren nichtflüchtigen Speicher, der auf Ladungsakkumulation und der resultierenden Bandverbiegung an den Schottkybarrieren basiert, gezeigt. / In the course of the ongoing downscaling of integrated circuits the need for alternative dielectric materials has arisen. The polarizability of these dielectric thin-films is highest in highly directional crystalline phases. Since epitaxial single crystalline oxide films are very difficult to integrate into the complex DRAM fabrication process, poly- or nanocrystalline thin-films must be used. However these films are prone to very high leakage currents. Since the information is stored as charge on a capacitor in the DRAM cell, the loss of this charge through leakage currents is the origin of information loss. The rate of the necessary refresh cycles is directly determined by these leakage currents. A fundamental understanding of the underlying charge carrier transport mechanisms and an understanding of the structural film properties leading to such leakage currents are essential to the development of new, dielectric thin-film materials. Conductive Atomic Force Microscopy (CAFM) is a scanning probe based technique which correlates structural film properties with local electrical conductivity. This method was used to examine the spatial distribution of leakage currents in a comparative study. I was shown that it is sufficient to include an unclosed interlayer of Aluminium oxide into a Zirconium dioxide film to significantly reduce leakage currents while maintaining a sufficiently high capacitance. Moreover, a CAFM was modified and used to examine the switching behavior of a silicon nanowire Schottky barrier field effect transistors in dependence of the probe position. It was proven experimentally that Schottky barriers control the charge carrier transport in these devices. In addition, a proof of concept for a reprogrammable nonvolatile memory device based on charge accumulation and band bending at the Schottky barriers was shown.

Die Sammlung der zwei-dimensionalen (2D) Materialien ist begrenzt, da sehr wenige Verbindungen stabil bleiben, sobald sie nur aus Oberflächen bestehen. Aufgrund ihrer außergewöhnlichen Eigenschaften sind 2D Materialien jedoch nach wie vor überaus begehrt. Vor kurzem wurden atomar definierte, chemisch gesättigte SiO2 Bilagen auf verschiedenen Metalloberflächen präpariert. Eine solche ultradünne Silika-Lage wäre eine vielversprechende Ergänzung zur Familie der 2D Materialien, wenn sie unter Strukturerhalt vom Wachstumssubstrat isoliert werden kann. In dieser Arbeit untersuchen wir die Eigenschaften einer Silika-Bilage im Zusammenhang mit Anwendungen von 2D Materialien. Die Bilage besitzt kristalline und amorphe Regionen, die beide atomar glatt sind. Die kristalline Region besitzt ein hexagonales Gitter mit gleichmäßiger Porengröße, während die amorphe Region einer komplexeren Beschreibung bedarf. In einer Studie von Baublöcken zeigen wir, dass mittelreichweitige Struktureinheiten in Korrelation mit einem Parameter für die Bindungswinkelfrustration auftreten. Das Netzwerk verschiedener Nanoporen stellt eine größenselektive Membran dar, wie wir in einer Adsorptionsstudie zeigen. Pd- und Au-Atome durchdringen den Silikafilm abhängig von der Größe der zur Verfügung stehenden Nanoporen. Der ultradünne Film hält der Einwirkung verschiedener Lösungsmittel stand und die Beständigkeit der Struktur in Wasser wird analysiert. Diese Studien deuten die außergewöhnliche Stabilität dieser Struktur an. Wir entwickeln eine polymerbasierte mechanische Exfoliation, um den Film von seinem Wachstumssubstrat zu entfernen, und zeigen, dass der Film als intakte Einheit vom Substrat abgelöst wird. Wir präsentieren anschließend den Transfer des Silikafilms auf ein TEM-Gitter, wo er schraubenartig gewundene Formen annimmt. Weiterhin wurde der Film auf ein Pt(111)-Substrat transferiert. In diesem Fall wird unter Erhalt der Struktur ein Transfer in der Größenordnung von Millimetern erreicht. / The library of two-dimensional (2D) materials is limited, since only very few compounds remain stable when they consist of only surfaces. Yet, due to their extraordinary properties, the hunt for new 2D materials continues. Recently, an atomically defined, self-saturated SiO2 bilayer has been prepared on several metal surfaces. This ultrathin silica sheet would be a promising addition to the family of 2D materials, if it can be isolated from its growth substrate without compromising its structure. In this work, we explore the properties of a silica bilayer grown on Ru(0001) in the context of 2D technology applications. The bilayer sheet exhibits crystalline and amorphous regions, both being atomically flat. The crystalline region possesses a hexagonal lattice with uniform pore size, while the amorphous region requires a more complex description. In a building block study of the amorphous region, we find that medium range structural patterns correlate with a parameter describing the bond angle frustration. The resulting network of different nanopores represents a size-selective membrane, as illustrated in an adsorption study. Pd and Au atoms are shown to penetrate the silica film selectively, depending on the presence of appropriately sized nanopores. The ultrathin silica film is shown to withstand exposure to different solvents and the stability of the structure in water is analyzed. These studies indicate extraordinary stability of this nanostructure. We develop a polymer assisted mechanical exfoliation method for removing the film from the growth substrate, providing evidence that the film is removed as an intact sheet from the growth substrate. We subsequently present the transfer of the silica bilayer to a TEM grid, where it forms micro-ribbons. Further, the film is transferred to a Pt(111) substrate, where mm-scale transfer under retention of the structure is achieved.

Electric and magnetic fields in the vicinity of strong sources of radiation (e.g. radar and broadcasting) can exceed the limits mentioned in the national standards for the exposition of persons. Field probes are needed to warn personnel if they are going too close to the RF-sources. For acceptance reasons the field probes should be universal in such a way that no user adjustment of frequency is required. The limits for power density, electric and magnetic field strength depend on the frequency. In contrast, field probes covering a large frequency range, e.g. 1 MHz to 18 GHz or even larger, normally have a flat frequency response. Therefore, the person using the field probe has to know the frequency of the electromagnetic field and to evaluate fieldstrength with respect to the frequency dependent limit value defined by law. Human mistakes while making that evaluation can lead to expositions above the limit value. On the other hand, the evaluation of the power density in the presence of multiple strong sources of radiation at different frequencies with different limit values also leads to measurement problems. A new approach has been undertaken to overcome these difficulties in the development of a rectifying field probe. It consists in shaping the antenna factor of the probe inversely proportional to the limit value. The isotropic response of field probes can be achieved, if three dipole antennas are arranged perpendicular to each other. The presence of dielectric supporting material leads to degradation of the isotropic response of such a field probe. The effect will be investigated. For typical substrates the isotropic response is degraded by up to 3.8 dB. An compensation for this effect will be proposed that leads to a residual unisotropic response of less than 0.2 dB.

Electric and magnetic fields in the vicinity of strong sources of radiation (e.g. radar and broadcasting) can exceed the limits mentioned in the national standards for the exposition of persons. Field probes are needed to warn personnel if they are going too close to the RF-sources. For acceptance reasons the field probes should be universal in such a way that no user adjustment of frequency is required. The limits for power density, electric and magnetic field strength depend on the frequency. In contrast, field probes covering a large frequency range, e.g. 1 MHz to 18 GHz or even larger, normally have a flat frequency response. Therefore, the person using the field probe has to know the frequency of the electromagnetic field and to evaluate fieldstrength with respect to the frequency dependent limit value defined by law. Human mistakes while making that evaluation can lead to expositions above the limit value. On the other hand, the evaluation of the power density in the presence of multiple strong sources of radiation at different frequencies with different limit values also leads to measurement problems. A new approach has been undertaken to overcome these difficulties in the development of a rectifying field probe. It consists in shaping the antenna factor of the probe inversely proportional to the limit value. The isotropic response of field probes can be achieved, if three dipole antennas are arranged perpendicular to each other. The presence of dielectric supporting material leads to degradation of the isotropic response of such a field probe. The effect will be investigated. For typical substrates the isotropic response is degraded by up to 3.8 dB. An compensation for this effect will be proposed that leads to a residual unisotropic response of less than 0.2 dB.

Presented master's thesis is focused on studying electroinsulating epoxy resin-based sealings. It describes the chemical composition, production, properties and measuring methods of basic electric quantities of these materials. The aim of the thesis is to compare several sets of samples of composite epoxy resins with different kinds of micro-ground siliceous sand as a filling. The temperature and frequency dependence of relative permittivity, dissipation factor and inner resistivity are measured for given samples.

The main idea of this thesis is measurements of dielectric materials by using a device Tettex. The thesis is about basic physic properties of dielectric materials. The determination of a dielectric material is considered. The behavior of these materials in electrical fields and reasons, those can have an influence on it, are considered as well. In the text are described measuring methods of chosen parameters of dielectric materials by device Tettex and its functional principles. There are an evaluation of measurements, which were done, and a discussion about achieved results.

This diploma thesis deals with the fundamental properties of epoxide mixtures, as determining of these fundamental properties of epoxide mixtures could in the case of favorable results lead to diminishing the amount of defects in epoxide-embedded instrument transformers. As the influence of effects in the manufacturing process of transformers causing poor quality is very extensit, the biggest emphasis is laid capitally on the influence of the epoxide casting mixture composition. The thesis describes the manufacture technology including used methodics and materials. The compositions of epoxide resins and the mechanisms of their curing. Also, the definitions of fundamental properties of dielectric materials and the description of diagnostic methods used to relative permitivity, dissipation factor and inner resistivity are included. suitable casts of acquired samples were set and dried out within the experimental part, followed by measurement of fundamental electrical properties in temperature and frequency relations. Hereafter a comparison of individual samples and the evaluation of their electrical properties will be carried out.