Ma thèse concerne le développent de systèmes ultra compactes auto-alignés et à faible coût intégréssur fibre optique monomode pour la collection fibrée de la luminescence locale. Dans un premiertemps, un axicon fibré auto-aligné (AXIGRIN) est proposé permettant de fournir la première imagerierésolue ultra-compacte fibrée de quantum dots PbS infrarouges. Ensuite, la première nano-imagerie(système entièrement fibrée) de quantum dots PbS uniques est réalisée à l’aide d’une nano-antenneà ouverture bowtie intégrée sur pointe fibrée. Enfin, le concept d’≪antenne cornet≫ nano-optiqueest proposé pour le couplage direct et efficace de la luminescence excitée par rayons X à une fibreoptique, dans le but de générer les premiers capteurs et dosimètres fibrés à rayons X. / My thesis is devoted to develop ultra-compact, plug-and-play and low-cost single-mode optical fibersystems for in-fiber luminescence collection. First, a new fiber self-aligned axicon is proposed toprovide the first resolved infrared fluorescence imaging of PbS quantum dots in far field. Then,all-fiber near-field imaging of single PbS quantum dots is achieved by double resonance bowtienano-aperture antenna (BNA) with nanometer resolution. Finally, the concept of fiber nano-opticalhorn antenna is proposed for in-fiber X-ray excited luminescence out-coupling, with the purpose ofgenerating the first generation of fiber X-ray sensors and dosimeters

Physical systems having dimensions smaller than, or of the same order of magnitude as, the characteristic length scale relevant to a physical property are referred to as mesoscopic physical systems. Due to the dimensions of the system, several physical properties get affected and this could reveal interesting physics which would other-wise have not been apparent. In the recent times, a lot interesting applications have resulted from such studies. The fundamental length scale in ferromagnetic systems is the exchange length. It is related to the magnetic anisotropy and exchange constants. Other length scales such as the size of a magnetic domain or a domain wall depends on the minimisation of energy associated with this length scale along with other factors such as zeeman energy, magnetostatic, magnetoelastic and anisotropy energies. Ultrathin magnetic films have thickness smaller than the exchange length. In this thickness regime, the surface of the film plays an important role. The magnetic anisotropy energy would get a significant contribution from the surface of the film and if it dominates over the volume contribution, would eventually lead to magnetisation pointing out of the plane of the film as opposed to imposition of demagnetising fields. Examples for such cases are FePt(L10 phase) films and Co(0001) films. Such films are important in memory applications where perpendicularly magnetised recording media are desired. When the lateral dimensions of thin films are reduced, demagnetising fields become even more important. Depending on the anisotropy in the system, certain domain patterns get stabilised in the final structure. This has led to important applications in the field of magnonics. The use of angular momentum transfer from spin polarised electrons to change the configuration of magnetisation of structured magnetic films has led to interesting memory and oscillator applications. The underlying physical parameter that needs to be controlled and carefully studied in all these cases is the magnetic anisotropy. It is favourable to have uniaxial magnetic anisotropy for memory and oscillators. This thesis chiefly deals with Fe/GaAs(001) systems. The choice of the physical system follows interest in spintronics where spin injection is desired into a semiconductor from a ferromagnet. The thesis is organized into chapters as follows. Chapter 1 attempts to introduce the reader to some of the basic concepts of mag-netism and some magnetic phenomena. The characteristic nature of a ferro-magnetic material is its spontaneous magnetisation due to long range ordering below the Curie temperature. But the moment is coupled, through some in-teractions, to spatial co-ordinates which leads to spatial variation of magnetic properties. Such interactions are also responsible for the formation of magnetic domains. The spatial variation of magnetic properties within a ferromagnet is called magnetic anisotropy. A major part of the thesis deals with the study of magnetic anisotropy of Fe thin films grown on GaAs(001) substrates. For a better understanding, the structure of the semiconductor is introduced first before discussing the influence of the structure of GaAs on the growth of Fe. A short description of the uniaxial magnetic anisotropy in Fe films is given before starting on an exploration of some possible reasons for it. Concepts of ferromagnetic resonance, spin torque effect and micromagnetic simulations are given. Chapter 2 gives a brief description of some of the experimental apparatus that was setup during the course of the research along with an overview of the differ-ent sample preparation and characterisation techniques used. The chapter is organised according to the general functionality of the techniques. Some con-cepts such as the use of low energy electrons, nanostructuring etc are introduced along with the corresponding techniques since it is best understood along with the instrumentation. Chapter 3 reports some surprising findings about the in-plane magnetic anisotropy in Fe films grown on an MgO underlayer. Until now, it has been understood that such films should exhibit only a four-fold magnetic anisotropy within the plane of the film. But the Fe/MgO/GaAs(001) films studied here exhibited an in-plane uniaxial magnetic anisotropy(IPUMA). IPUMA is dominant upto about 25 ML of Fe in case of Fe/MgO/GaAs(001) films whereas, in Fe/GaAs(001) films it is dominant only upto about 15 ML. Thus, the presence of the MgO film even appeared to enhance the uniaxial anisotropy as compared to the Fe/GaAs(001) films. In the ferromagnetic resonance (FMR) spectra, as many as three peaks were observed in Fe/GaAs(001) films of thickness 50 ML close to the hard axis of magnetisation. This means that three could be three energy minima possibly due to a competition between the anisotropies involved. Chapter 4 elaborates the investigations of the effect of orientation and doping con-centration of the GaAs substrate on the magnetic anisotropy of Fe/GaAs(001) films. It is found that doping the substrate (n type) reduces the strength of the IPUMA in Fe/GaAs films. In the wake of the long-standing debate of electronic structure v/s stress as the origin of the IPUMA in Ferromagnet/Semiconductor films, this result is important because it implies that the electronic structure of the Fe/GaAs interface influences the magnetic anisotropy. But stress, as a cause of IPUMA cannot be ruled out. The influence of deposition techniques on magnetic anisotropy is also investigated. Chapter 5 presents a way of manipulating magnetic anisotropy, and hence mag-netisation dynamics, by nanostructuring of epitaxial Fe films. It is based on the property that magnetic anisotropy of Fe films is thickness dependent. It is demonstrated that using techniques of nanostructuring, a 2 dimensional mag-netic system with controllable variation of local magnetic anisotropy is created. Such a system could be a potential magnonic crystal. chapter 6 demonstrates the proof of concept of a new memory device where memory is stored in the magnetic domain configuration of a ring in relation to that of a nano-wire. Switching between the memory states is acheived through spin trasfer torque of an electric current passing through the device, whereas read-out of the memory state is through the measurement of resistance of the device. Devices are made using NiFe and Co; it is seen that the behaviour of the devices can be explained taking into account the anisotropic magnetoresistance of the material used. Finally, the various results are summarised and a broad outlook is given. Some possible future research related to the topics dealt within this thesis is discussed.

Spatial confinement of electrons and their interactions as well as confinement of the spin dimensionality often yield drastic changes of the electronic and magnetic properties of solids. Novel quantum transport and optical phenomena, involving electronic spin degrees of freedom in semiconductor heterostructures, as well as a rich variety of exotic quantum ground states and magnetic excitations in complex transition metal oxides that arise upon such confinements, belong therefore to topical problems of contemporary condensed matter physics. In this work electron spin systems in reduced dimensions are studied with Electron Spin Resonance (ESR) spectroscopy, a method which can provide important information on the energy spectrum of the spin states, spin dynamics, and magnetic correlations. The studied systems include quasi onedimensional spin chain materials based on transition metals Cu and Ni. Another class of materials are semiconductor heterostructures made of Si and Ge. Part I deals with the theoretical background of ESR and the description of the experimental ESR setups used which have been optimized for the purposes of the present work. In particular, the development and implementation of axial and transverse cylindrical resonant cavities for high-field highfrequency ESR experiments is discussed. The high quality factors of these cavities allow for sensitive measurements on μm-sized samples. They are used for the investigations on the spin-chain materials. The implementation and characterization of a setup for electrical detected magnetic resonance is presented. In Part II ESR studies and complementary results of other experimental techniques on two spin chain materials are presented. The Cu-based material Linarite is investigated in the paramagnetic regime above T > 2.8 K. This natural crystal constitutes a highly frustrated spin 1/2 Heisenberg chain with ferromagnetic nearest-neighbor and antiferromagnetic next-nearestneighbor interactions. The ESR data reveals that the significant magnetic anisotropy is due to anisotropy of the g-factor. Quantitative analysis of the critical broadening of the linewidth suggest appreciable interchain and interlayer spin correlations well above the ordering temperature. The Ni-based system is an organic-anorganic hybrid material where the Ni2+ ions possessing the integer spin S = 1 are magnetically coupled along one spatial direction. Indeed, the ESR study reveals an isotropic spin-1 Heisenberg chain in this system which unlike the Cu half integer spin-1/2 chain is expected to possess a qualitatively different non-magnetic singlet ground state separated from an excited magnetic state by a so-called Haldane gap. Surprisingly, in contrast to the expected Haldane behavior a competition between a magnetically ordered ground state and a potentially gapped state is revealed. In Part III investigations on SiGe/Si quantum dot structures are presented. The ESR investigations reveal narrowlines close to the free electron g-factor associated with electrons on the quantum dots. Their dephasing and relaxation times are determined. Manipulations with sub-bandgap light allow to change the relative population between the observed states. On the basis of extensive characterizations, strain, electronic structure and confined states on the Si-based structures are modeled with the program nextnano3. A qualitative model, explaining the energy spectrum of the spin states is proposed.:Abstract i Contents iii List of Figures vi List of Tables viii 1 Preface 1 I Background and Experimental 5 2 Principles of ESR 7 2.1 The Resonance Phenomenon . . . . . . . . . . . . . . . . . . . 7 2.2 ESR Spectrum . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.2.1 The g -factor . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.2.2 Relaxation Times . . . . . . . . . . . . . . . . . . . . . . 12 2.2.3 Lineshape Properties . . . . . . . . . . . . . . . . . . . . 13 2.3 Effective Spin Hamiltonian . . . . . . . . . . . . . . . . . . . . . 15 2.4 Spin-Orbit Coupling . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.5 d-electrons in a Crystal Field . . . . . . . . . . . . . . . . . . . . 17 2.6 Interactions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2.6.1 Dipolar Coupling . . . . . . . . . . . . . . . . . . . . . . 23 2.6.2 Exchange Interaction . . . . . . . . . . . . . . . . . . . . 23 2.6.3 Superexchange . . . . . . . . . . . . . . . . . . . . . . . 24 2.6.4 Symmetric Anisotropic Exchange . . . . . . . . . . . . 25 2.6.5 Antisymmetric Anisotropic Exchange . . . . . . . . . . 25 2.6.6 Hyperfine Interaction . . . . . . . . . . . . . . . . . . . 26 3 Experimental 27 3.1 Setup for Experiments at 10GHz . . . . . . . . . . . . . . . . . 27 3.2 Implementation of an EDMR Setup . . . . . . . . . . . . . . . . 29 3.2.1 Basic Characterization . . . . . . . . . . . . . . . . . . . 31 3.3 High Frequency Setup . . . . . . . . . . . . . . . . . . . . . . . . 31 3.3.1 MillimeterWave Vector Network Analyzer . . . . . . . 33 3.3.2 Waveguides and Cryostats . . . . . . . . . . . . . . . . . 34 3.4 Development of the Resonant Cavity Setup . . . . . . . . . . . 35 3.4.1 Mode Propagation . . . . . . . . . . . . . . . . . . . . . 38 3.4.2 Resonant CavityModes . . . . . . . . . . . . . . . . . . 40 3.4.3 Resonant Cavity Design . . . . . . . . . . . . . . . . . . 41 3.4.4 Resonant Cavity Sample Stick . . . . . . . . . . . . . . . 45 3.4.5 Experimental Characterization . . . . . . . . . . . . . . 47 3.4.6 Performing an ESR Experiment . . . . . . . . . . . . . . 53 II Quasi One-Dimensional Spin-Chains 57 4 Motivation 59 5 Quasi One-Dimensional Systems 61 5.1 Magnetic Order and Excitations . . . . . . . . . . . . . . . . . . 63 5.2 Competing Interactions . . . . . . . . . . . . . . . . . . . . . . . 64 5.3 Haldane Spin Chain . . . . . . . . . . . . . . . . . . . . . . . . . 66 6 Linarite 69 6.1 Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 6.2 Magnetization and ESR . . . . . . . . . . . . . . . . . . . . . . . 71 6.3 NMR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 6.4 Summary and Conclusion . . . . . . . . . . . . . . . . . . . . . 81 6.5 Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 7 The Ni-hybrid NiCl3C6H5CH2CH2NH3 83 7.1 Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 7.2 Susceptibility andMagnetization . . . . . . . . . . . . . . . . . 85 7.3 ESR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 7.4 Further Investigations . . . . . . . . . . . . . . . . . . . . . . . . 95 7.5 Summary and Conclusion . . . . . . . . . . . . . . . . . . . . . 96 8 Summary 99 III SiGe Nanostructures 101 9 Motivation 103 10 SiGe Semiconductor Nanostructures 107 10.1 Background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107 10.1.1 Silicon and Germanium . . . . . . . . . . . . . . . . . . 107 10.1.2 Epitaxial Growth of SiGe Heterostructures . . . . . . . 109 10.1.3 Strain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 10.1.4 Band Deformation . . . . . . . . . . . . . . . . . . . . . 112 10.2 Sample Structure and Characterization . . . . . . . . . . . . . 114 11 Modelling of SiGe/Si Heterostructures 119 11.1 Program Structure . . . . . . . . . . . . . . . . . . . . . . . . . . 120 11.2 Implementation of Si/Ge System . . . . . . . . . . . . . . . . . 121 11.3 Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 11.3.1 Single Quantum Dot . . . . . . . . . . . . . . . . . . . . 123 11.3.2 Multiple Quantum Dots . . . . . . . . . . . . . . . . . . 127 11.4 Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 11.5 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 12 ESR Experiments on Si/SiGe Quantum Dots 135 12.1 ESR on Si Structures . . . . . . . . . . . . . . . . . . . . . . . . . 135 12.2 Experimental Results . . . . . . . . . . . . . . . . . . . . . . . . 137 12.2.1 Samples grown at 600◦C . . . . . . . . . . . . . . . . . . 138 12.2.2 Samples grown at 700◦C . . . . . . . . . . . . . . . . . . 139 12.2.3 T1-Relaxation Time . . . . . . . . . . . . . . . . . . . . . 143 12.2.4 Effect of Illumination . . . . . . . . . . . . . . . . . . . . 145 12.3 Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 12.3.1 Quantum Dots . . . . . . . . . . . . . . . . . . . . . . . 149 12.3.2 Assignment of ESR Lines . . . . . . . . . . . . . . . . . . 150 12.3.3 Relaxation Times . . . . . . . . . . . . . . . . . . . . . . 153 12.3.4 Donors in Heterostructures . . . . . . . . . . . . . . . . 153 12.4 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156 13 Summary and Outlook 157 Bibliography 163 Acknowledgements 176

The purpose of the study was to investigate the factors associated with the interruption of tuberculosis treatment in the Swakopmund district of Namibia. A descriptive cross-sectional survey was conducted. Data was collected using a structured questionnaire administered by interviewers. The population consisted of both treatment interrupters and non-interrupters. The total sample was 143 respondents. The findings revealed that three factors were significantly associated with TB treatment interruption, namely a lack of formal education (p = 0.032), lack of access to media (p = 0.017), and clinic opening times (p = 0.000). Recommendations made include improving the support given to TB patients, increasing their understanding of TB and adopting new research and technology. / Health Studies / M.A. (Public Health)

The ability to fabricate semiconductor wafers with spatially selected regions of different bandgap material is required for the fabrication of monolithic photonic integrated circuits (PIC's). Although this subject has been studied for three decades and many semiconductor engineering approaches have been proposed, the problem of achieving reproducible results has constantly challenged scientists and engineers. This concerns not only the techniques relaying on multiple sequential epitaxial growth and selective area epitaxy, but also the conventional quantum well intermixing (QWI) technique that has been investigated as a post-growth approach for bandgap engineering. Among different QWI techniques, those based on the use of different lasers appear to be attractive in the context of high-precision and the potential for cost-effective bandgap engineering. For instance, a tightly focused beam of the infrared (IR) laser could be used for the annealing of small regions of a semiconductor wafer comprising different quantum well (QW) or quantum dot (QD) microstructures. The precision of such an approach in delivering wafers with well defined regions of different bandgap material will depend on the ability to control the laser-induced temperature, dynamics of the heating-cooling process and the ability to take advantage of the bandgap engineering diagnostics. In the frame of this thesis, I have investigated IR laser-induced QWI processes in QW wafers comprising GaAs/A1GaAs and InP/InGaAsP microstructures and in InAs QD microstructures grown on InP substrates. For that purpose, I have designed and set up a 2-laser system for selective area rapid thermal annealing (Laser-RTA) of semiconductor wafers. The advantage of such an approach is that it allows carrying out annealing with heating-cooling rates unattainable with conventional RTA techniques, while a tightly focused beam of one of the IR lasers is used for `spot annealing'. These features have enabled me to introduce a new method for iterative bandgap engineering at selected areas (IBESA) of semiconductor wafers. The method proves the ability to deliver both GaAs and InP based QW/QD wafers with regions of different bandgap energy controlled to better than « 1nm of the spectral emission wavelength. The IBESA technique could be used for tuning the optical characteristics of particular regions of a QW wafer prepared for the fabrication of a PIC. Also, this approach has the potential for tuning the emission wavelength of individual QDs in wafers designed, e.g., for the fabrication of single photon emitters. In the 1st Chapter of the thesis, I provide a short review of the literature on QWI techniques and I introduce the Laser - RTA method. The 2nd Chapter is devoted to the description of the fundamental processes related to the absorption of laser light in semiconductors. I also discuss the results of the finite element method applied for modeling and semi-quantitative description of the Laser - RTA process. Details of the experimental setup and developed procedures are provided in the 3rd Chapter. The results concerning direct bandgap engineering and iterative bandgap engineering are discussed in the 4th and 5th Chapters, respectively.

International Telemetering Conference Proceedings / November 04-07, 1991 / Riviera Hotel and Convention Center, Las Vegas, Nevada / Recent advances in acoustic detection and array processing have led to a new, state of the art, Sonobuoy Missile Impact Location System (SMILS). This system was developed for the 4950th Test Wing by E-Systems and the Johns Hopkins University Applied Physics Laboratory to support ballistic missile testing in broad ocean areas. The hardware and software required to perform the SMILS mission were developed in two different areas: 1) The flight system, installed aboard the Advanced Range Instrumentation Aircraft (ARIA), which provides everything necessary to guide the aircraft to the target area of Deep Ocean Transponders (DOTs), deploy sonobuoys, recover signals from the sonobuoys, and to process the recovered signals. The sonobuoy positions and impact locations of reentry vehicles are determined aboard the aircraft in real-time by telemetering the acoustic signals sent from the sonobuoys via Radio Frequency (RF) link to the aircraft. These acoustic signals are also recorded on analog tape in the aircraft. 2) The Post Mission Analysis System (PMAS), located at the 4950th Test Wing, processes the analog tapes recorded by the aircraft to do more sophisticated Processing than that performed on the aircraft, providing higher resolution of impact times and positions. This paper addressees the theory of PMAS operation and the specific approach used to perform automated acoustic detection of both narrow and wide band acoustic signals. It also addressees the processing technique employed to determine sonobuoy navigation and impact scoring.

<p>This thesis consists of a strategy to integrate distributed systems with the aid of web services. The focus of this research involves three subjects, web services and distributed database systems and its application on a real-life project.</p><p>For defining the context in this thesis, we present the research methodology that provides the path where the investigation will be performed and the general concepts of the running environment and architecture of web services.</p><p>The mayor contribution for this thesis is a solution for the Chamber Trade in Sweden and VNemart in Vietnam obtaining the requirement specification according to the SPIDER project needs and our software design specification using distributed databases and web services.</p><p>As results, we present the software implementation and the way or software meets and the requirements previously defined. For future web services developments, this document provides guidance for best practices in this subject.</p>

V této teoretické práci se zabýváme kvantově mechanickými jevy, jež jsou spjaté s vodi- vostními elektrony uzavřenými v kvantových tečkách. Nejprve je odvozen model nanokrys- talu jakožto potenciálové jámy. Při tom se ukazuje, že pouze objem, ne tvar, je významným parametrem modelu pro účely terahertzové spektroskopie. Studované geometrie jsou tak vzájemně zaměnitelné a výběr mezi nimi m·že zjednodušit dané úlohy. Pro zkoumání depo- larizačních efekt·, které jsou zahrnuty v depolarizačním faktoru v Maxwell Garnettově teorii efektivního prostředí, je zvolena sférická symetrie. V rámci poruchy prvního řádu je vyřešena Poissonova rovnice pro elektrony rozmístěné uvnitř koule podle vlnové funkce a je určen depo- larizační faktor. Zatímco v klasické limitě tento nabývá p·vodní hodnoty, pro nanokrystaly se zvyšuje a maxima je dosaženo v ne-degenerovaném režimu, kdy je obsazen pouze základní stav. Navýšení depolarizačního faktoru posouvá plasmonovou rezonanci směrem k vyšším frekvencím. 1

Ce travail porte sur la croissance par épitaxie sous jets moléculaires (EJM) et sur les propriétés structurales et optiques de boîtes quantiques (BQs) AlyGa1-yN insérées dans une matrice AlxGa1-xN (0001). L’objectif principal est d’étudier le potentiel des BQs en tant que nouvelle voie pour la réalisation d’émetteurs ultraviolets (UV) efficaces.Tout d'abord, nous avons étudié la croissance des BQs GaN en utilisant soit une source plasma (N2, appelée PAMBE) soit une source ammoniac (NH3, appelée NH3-MBE) afin de choisir la meilleure approche pour former les BQs les plus efficaces. Il a été montré que le procédé de croissance est mieux contrôlé en utilisant l’approche PAMBE, conduisant à la croissance de BQs GaN avec des densités plus élevées, une meilleure uniformité en taille et des intensités de photoluminescence (PL) jusqu’à trois fois plus élevées. En outre, l'influence de la contrainte épitaxiale sur le processus d'auto-assemblage des BQs a été étudiée en fabriquant des BQs GaN sur différentes couche tremplins d’AlxGa1-xN (avec 0,5 ≤ x ≤ 0,7). Nous avons montré que des BQs avec des densités plus élevées et des hauteurs plus faibles sont formées en augmentant le désaccord de paramètre de maille (c.à.d en utilisant des tremplins avec xAl plus élevé). Cependant, les mesures de photoluminescence (PL) indiquent un fort décalage de l'énergie d'émission vers le rouge lorsque xAl augmente, en raison de l'augmentation de la discontinuité du champ électrique interne de 3 à 5,3 MV/cm.Ensuite, des études approfondies sur les conditions de croissance et les propriétés optiques des BQs Al0,1Ga0,9N / Al0,5Ga0,5N ont été présentées, montrant les différents défis pour fabriquer des BQs efficaces. L’optimisation de la procédure de croissance, notamment l’étape de recuit post-croissance, a montré une modification de la forme des BQs. Plus précisément, un changement d’une forme allongée (pour un recuit à 740 °C), à une forme symétrique (pour un recuit à une température proche de ou supérieure à 800°C) a été observé. En plus, une bande d’émission supplémentaire vers les plus grandes longueurs d’onde a également été observée pour les BQs formées avec un recuit à 740°C. Cette bande a été attribuée à une fluctuation de composition des BQs, induisant la formation d’une famille additionnelle de BQs avec des hauteurs plus grandes et une compostions en Al inférieure à 10 %, estimée proche de l’alliage binaire GaN. Enfin, il a été démontré qu’en faisant un recuit à plus haute température (≥ 800°C), l’émission de PL de cette famille supplémentaire de BQs (BQs riche en Ga ou (Al)GaN) diminue très fortement. De plus, cette étape de recuit impacte fortement la forme des BQs et a conduit à une amélioration de leur efficacité radiative d’un facteur 3. Ensuite, la variation de la composition en Al des BQs AlyGa1-yN (0,1 ≤ y ≤ 0,4), ainsi que la quantité de matière déposée ont permis d’évaluer la gamme de longueurs d’onde d’émission accessibles. En ajustant les conditions de croissance, l’émission des BQs a été déplacée de l’UVA vers l’UVC, atteignant une émission autour de 270 - 275 nm (pour les applications de purification de l’eau et de l’air) avec des rendements radiatifs élevés. Les mesures de photoluminescence résolue en temps (TRPL), combinées avec les mesures de PL en fonction de la température, nous ont permis de déterminer les efficacités quantiques internes (IQE) des BQs GaN / AlxGa1-xN (0001). Des valeurs d’IQE comprises entre 50 % et 66 % ont été obtenues à basse température, avec la possibilité d’atteindre un rapport d’intensité intégré de PL, entre 300 K et 9 K, allant jusqu’à 75 % pour les BQs GaN et 46 % pour les BQs AlyGa1-yN (contre 0,5 % pour des structures équivalents à base de puits quantiques).Enfin, nous avons montré la possibilité de fabriquer des DELs à base de BQs (Al,Ga)N couvrant une grande gamme de longueurs d’onde allant du bleu-violet jusqu’à l’UVB (de 415 nm à 305 nm). / This PhD deals with the epitaxial growth, structural and optical properties of AlyGa1-yN quantum dots (QDs) grown on AlxGa1-xN (0001) by molecular beam epitaxy (MBE), with the aim to study their potential as a novel route for efficient ultraviolet (UV) emitters.First, we have studied the growth of GaN QDs using either plasma MBE (PAMBE) or ammonia MBE (NH3-MBE) to find the most adapted nitrogen source for the fabrication of UV emitting QDs. It was shown that the growth process is better controlled using PAMBE, leading to the growth of GaN QDs with higher densities, better size uniformity and up to three times higher photoluminescence (PL) intensities. Also, the influence of the epitaxial strain on the QD self-assembling process was studied by fabricating GaN QDs on different AlxGa1-xN surfaces (with 0.5 ≤ x ≤ 0.7). We showed that QDs with higher densities and smaller sizes (heights) are formed by using a larger lattice-mismatch (i.e. a higher xAl composition). However, photoluminescence (PL) measurements indicated a strong redshift in the emission energy as the Al content of the AlxGa1-xN template increases due to the increase of the internal electric field discontinuity from 3 to 5.3 MV/cm.Next, in-depth investigations of the growth conditions and optical properties of Al0.1Ga0.9N QDs / Al0.5Ga0.5N were done presenting the different challenges to be solved to grow efficient QDs. Changing the growth procedure, especially the post-growth annealing step, has shown a modification of the QD shape from elongated QDs, formed with an annealing at 740°C, to symmetric QDs, formed with an annealing at a temperature around or above 800°C. An additional band emission at lower energies was also observed for QDs grown with a lower annealing temperature (740°C). This additional band emission was attributed to the formation of QDs with higher heights and a reduced Al composition less than the nominal one of 10 % (i.e. forming Ga-rich QDs). The influence of the annealing step performed at higher temperature has been shown to strongly decrease the PL emission from this additional QD family. In addition, this annealing step strongly impacted the QD shape and led to an improvement of the QD radiative efficiency by a factor 3. Then, the AlxGa1-xN barrier composition (0.5 ≤ x ≤ 0.7), the AlyGa1-yN QD composition (0.1 ≤ y ≤ 0.4) as well as the deposited amount were varied in order to assess the range of accessible emission energies. Also, the influence of varying the AlxGa1-xN barrier composition on the QD formation was studied. By varying these growth conditions, the QD wavelength emission was shifted from the UVA down to the UVC range, reaching a minimum wavelength emission of 270 - 275 nm (for water and air purification applications) with a high radiative efficiency. Time resolved photoluminescence (TRPL) combined with temperature dependent PL measurements enabled us to determine the internal quantum efficiencies (IQE) of AlyGa1-yN QDs / AlxGa1-xN (0001). IQE values between 50 % and 66 % were found at low temperature, combined with the ability to reach a PL integrated intensity ratio, between 300 K and 9 K, up to 75 % for GaN QDs and 46 % for AlyGa1-yN QDs (versus 0.5 % in a similar quantum well structure emitting in the UVC range).Finally, the demonstration of AlyGa1-yN QD-based light emitting diode prototypes, emitting in the whole UVA range, using GaN and Al0.1Ga0.9N QDs, and in the UVB range down to 305 nm with Al0.2Ga0.8N QDs active regions, was shown.

Cette thèse présente la réalisation d'une source de photons uniques basée sur une boîte quantique InAs intégrée dans un fil photonique. Un fil photonique est un guide d'onde monomode constitué d'un matériau de fort indice de réfraction (GaAs dans notre cas). Pour un diamètre optimal voisin de 200 nm, pratiquement toute l'émission spontanée de l'émetteur (longueur d'onde dans le vide 950 nm) est dirigée vers le mode guidé fondamental. Le couplage des photons guidés à un objectif de microscope est ensuite optimisé en travaillant la géométrie des extrémités du fil. Ce dernier repose ainsi sur un miroir intégré et présente une extrémité supérieure en forme de taper. Cette approche non résonante combine de très bonnes performances à une grande tolérance sur la longueur d'onde de l'émetteur intégré. Cette thèse discute la physique des fils photoniques, la réalisation des structures en salle blanche et les résultats obtenus lors de la caractérisation optique. En particulier, nous avons réalisé une source combinant une efficacité record (0.72, état de l'art à 0.4) et une émission de photons uniques très pure. Nous discutons également le contrôle de la polarisation obtenu dans des fils de section elliptique. / This thesis presents the realization of an efficient single-photon source based on an InAs quantum dot integrated in a photonic nanowire. A photonic nanowire is a monomode waveguide made of a high refractive index material (GaAs in our case). For an optimal wire diameter around 200 nm, nearly all the spontaneous emission of the embedded single-photon emitter (free space wavelength 950 nm) is funnelled into the fundamental guided mode. In addition, the outcoupling efficiency of the guided photon to a microscope objective can be brought close to one with a proper engineering of the wire ends. The source thus features an integrated bottom mirror and a smooth tapering of the wire upper end. High performances are maintained over a broad wavelength range, a key asset of this 1D photonic structure. This thesis presents the physics which governs these structures, their realization, and their characterization. Under pulsed optical pumping, we demonstrate a single-photon source with a record efficiency of 0.72, combined with highly pure single-photon emission. We also discuss the possibility to obtain polarization control, using wire with an elliptical section.