Au vu des limitations rencontrées par la miniaturisation des circuits microélectroniques, l’augmentation de performances des systèmes repose largement aujourd’hui sur la fabrication d’empilements de couches minces complexes et innovants pour offrir davantage de compacité et de flexibilité. L’intérêt grandissant pour la réalisation de structures innovantes temporaires, i.e. permettant de réaliser des circuits sur les deux faces d’un même film, nous a mené à évaluer les potentialités d’une technologie combinant le transfert de films minces monocristallins, i.e. la technologie Smart Cut™, et un procédé de de porosification partielle du silicium afin de mettre au point une technologie de double report de film monocristallin. En ce sens, des substrats de silicium monocristallin ont été partiellement porosifiés par anodisation électrochimique. La mise en œuvre de traitements de substrats partiellement poreux a nécessité l’emploi de techniques de caractérisation variées pour dresser une fiche d’identité des couches minces poreuses après anodisation et évaluer l’évolution des propriétés de ces couches en fonction des différents traitements appliqués. Les propriétés chimiques, structurales et mécaniques des couches de Si poreux ont ainsi été étudiées via l’utilisation de différentes techniques de caractérisation (XPS-SIMS, AFM-MEB-XRD, nanoindentation, technique d’insertion de lame, etc.). Ces études ont permis d’appréhender et de décrire les mécanismes physiques mis au jeu au cours des différents traitements et de déterminer les caractéristiques {porosité, épaisseur} optimales des couches poreuses compatibles avec les séquences de la technologie proposée. La technologie Smart Cut™ a ainsi été appliquée à des substrats partiellement porosifiés menant à la fabrication réussie d’une structure temporaire de type Silicium-sur-Isolant avec une couche de silicium poreux enterrée. Ces structures temporaires ont été « démontées » dans un second temps par collage polymère ou collage direct et insertion de lame menant au second report de film mince monocristallin par rupture au sein de la couche porosifiée et donc fragile. Les structures fabriquées ont été caractérisées pour vérifier leur intégrité et leurs stabilités chimique et mécanique. Les propriétés cristallines du film mince de Si monocristallin, reporté en deux temps, ont été vérifiées confirmant ainsi la compatibilité des structures fabriquées avec des applications microélectroniques telles que les applications de type « Back-Side Imager » nécessitant une implémentation de composants sur les deux faces du film. Ainsi une technologie prometteuse et performante a pu être élaborée permettant le double report de films minces monocristallins et à fort potentiel pour des applications variées comme les imageurs visibles ou le photovoltaïque. / As scaling of microelectronic devices is confronted from now to fundamental limits, improving microelectronic systems performances is largely based nowadays on complex and innovative stack realization to offer more compaction and flexibility to structures. Growing interest in the fabrication of innovative temporary structures, allowing for example double sided layer processing, lead us to investigate the capability to combine one technology of thin single crystalline layer transfer, i.e. the Smart Cut™ technology, and partial porosification of silicon substrate in order to develop an original double layer transfer technology of thin single crystalline silicon film. To this purpose, single crystalline silicon substrates were first partially porosified by electrochemical anodization. Application of suitable treatments of porous silicon layer has required the use of several characterization methods to identify intrinsic porous silicon properties after anodization and to verify their evolution as function of different applied treatments. Chemical, structural and mechanical properties of porous silicon layers were studied by using different characterization techniques (XPS-SIMS, AFM-MEB-XRD, nanoindentation, razor blade insertion, etc.). Such studies allowed comprehending and describing physical mechanisms occurring during each applied technological steps and well determining appropriated {porosity, thickness} parameters of porous silicon layer with the developed technological process flow. The Smart Cut™ technology was successfully applied to partially porosified silicon substrates leading to the fabrication of temporary SOI-like structures with a weak embedded porous Si layer. Such structures were then “dismantled” thanks to a second polymer or direct bonding and razor blade insertion to produce a mechanical rupture through the fragile embedded porous silicon layer and to get the second thin silicon film transfer. Each fabricated structure was characterized step by step to check its integrity and its chemical and mechanical stabilities. Crystalline properties of the double transferred silicon layer were verified demonstrating the compatibility of such structures with microelectronic applications such as “Back-Side Imagers” needing double-sided layer processing. Eventually, a promising and efficient technology has been developed to allow the double transfer of thin single crystalline silicon layer which presents a high potential for various applications such as visible imagers or photovoltaic systems.

In recent years, Polymer Electrolyte Membrane Fuel Cells (PEMFC) have attracted much attention due to their potential as a clean power source for many applications, including automotive, portable and stationary devices. This resulted in a tremendous technological progress, such as the development of new membranes and electro-catalysts or the improvement of electrode structures. However, in order to compete within the most attractive markets, the PEMFC technologies did not reach all the required characteristics yet, in particular in terms of cost and durability.Because of the strong coupling between different physicochemical phenomena, the interpretation of experimental observations is difficult, and analysis through modeling becomes crucial to elucidate the degradation and failure mechanisms, andto help improving both PEMFC electrochemical performance and durability.The development of a theoretical tool is essential for industrials and the scientific community to evaluate the PEMFC degradation and to predict itsperformance and durability in function of the materials properties and in a diversity of operating conditions. This manuscript summarizes my scientific research efforts in this exciting topic during the last 9 years in France, including my invention of the MEMEPhys multiscale simulation package,developed on the basis of my childhood passion for the New Technologies for Energyin Argentina. My perspectives of adapting this approach to other electrochemical systems such as water electrolyzers and batteries are also discussed.

In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization.

In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization.

Extracellular neuroelectronic interfacing has important applications in the fields of neural prosthetics, biological computation and whole-cell biosensing for drug screening and toxin detection. While the field of neuroelectronic interfacing holds great promise, the recording of high-fidelity signals from extracellular devices has long suffered from the problem of low signal-to-noise ratios and changes in signal shapes due to the presence of highly dispersive dielectric medium in the neuron-microelectrode cleft. This has made it difficult to correlate the extracellularly recorded signals with the intracellular signals recorded using conventional patch-clamp electrophysiology. For bringing about an improvement in the signalto-noise ratio of the signals recorded on the extracellular microelectrodes and to explore strategies for engineering the neuron-electrode interface there exists a need to model, simulate and characterize the cell-sensor interface to better understand the mechanism of signal transduction across the interface. Efforts to date for modeling the neuron-electrode interface have primarily focused on the use of point or area contact linear equivalent circuit models for a description of the interface with an assumption of passive linearity for the dynamics of the interfacial medium in the cell-electrode cleft. In this dissertation, results are presented from a nonlinear dynamic characterization of the neuroelectronic junction based on Volterra-Wiener modeling which showed that the process of signal transduction at the interface may have nonlinear contributions from the interfacial medium. An optimization based study of linear equivalent circuit models for representing signals recorded at the neuron-electrode interface subsequently iv proved conclusively that the process of signal transduction across the interface is indeed nonlinear. Following this a theoretical framework for the extraction of the complex nonlinear material parameters of the interfacial medium like the dielectric permittivity, conductivity and diffusivity tensors based on dynamic nonlinear Volterra-Wiener modeling was developed. Within this framework, the use of Gaussian bandlimited white noise for nonlinear impedance spectroscopy was shown to offer considerable advantages over the use of sinusoidal inputs for nonlinear harmonic analysis currently employed in impedance characterization of nonlinear electrochemical systems. Signal transduction at the neuron-microelectrode interface is mediated by the interfacial medium confined to a thin cleft with thickness on the scale of 20-110 nm giving rise to Knudsen numbers (ratio of mean free path to characteristic system length) in the range of 0.015 and 0.003 for ionic electrodiffusion. At these Knudsen numbers, the continuum assumptions made in the use of Poisson-Nernst-Planck system of equations for modeling ionic electrodiffusion are not valid. Therefore, a lattice Boltzmann method (LBM) based multiphysics solver suitable for modeling ionic electrodiffusion at the mesoscale neuron-microelectrode interface was developed. Additionally, a molecular speed dependent relaxation time was proposed for use in the lattice Boltzmann equation. Such a relaxation time holds promise for enhancing the numerical stability of lattice Boltzmann algorithms as it helped recover a physically correct description of microscopic phenomena related to particle collisions governed by their local density on the lattice. Next, using this multiphysics solver simulations were carried out for the charge relaxation dynamics of an electrolytic nanocapacitor with the intention of ultimately employing it for a simulation of the capacitive coupling between the neuron and the v planar microelectrode on a microelectrode array (MEA). Simulations of the charge relaxation dynamics for a step potential applied at t = 0 to the capacitor electrodes were carried out for varying conditions of electric double layer (EDL) overlap, solvent viscosity, electrode spacing and ratio of cation to anion diffusivity. For a large EDL overlap, an anomalous plasma-like collective behavior of oscillating ions at a frequency much lower than the plasma frequency of the electrolyte was observed and as such it appears to be purely an effect of nanoscale confinement. Results from these simulations are then discussed in the context of the dynamics of the interfacial medium in the neuron-microelectrode cleft. In conclusion, a synergistic approach to engineering the neuron-microelectrode interface is outlined through a use of the nonlinear dynamic modeling, simulation and characterization tools developed as part of this dissertation research.