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O deslocamento de elétrons em gases pode ser caracterizado por grandezas macroscópicas tais como a velocidade de arrastamento, taxa de ionização, primeiro coeficiente de Townsend e os coeficientes de difusão longitudinal e transversal, que são denominados de parâmetros de transporte. Esses parâmetros são importantes já que permitem a validação das secções de choque de colisões de elétrons com as moléculas do gás, contribuem com informações para modelos de descargas automantidas e são importantes para o desenvolvimento de novos detectores gasosos. Neste trabalho são apresentados os resultados de velocidade de arrastamento (W), taxa de ionização (Ri) e do primeiro coeficiente Townsend de ionização (α), para o isobutano e n-butano em função do campo elétrico reduzido efetivo no intervalo de 130 a 180 Td, obtidos utilizando a técnica de Townsend pulsada. Em nosso aparato, os elétrons primários são gerados a partir da incidência no catodo de um curto pulso de laser e são acelerados em direção ao anodo por meio de um campo elétrico uniforme. O sinal elétrico proveniente do deslocamento desses elétrons é digitalizado por um osciloscópio e a partir do ajuste de uma função modelo à forma do sinal elétrico, determinam-se os parâmetros de transporte. Os resultados obtidos para o isobutano e n-butano foram comparados com os valores da simulação Magboltz 2-versão 8.6 em razão da escassez de dados na literatura para esses gases na região de campo elétrico reduzido estudada. / The electron swarm can be characterized by macroscopic quantities such as the drift velocity, ionization rate, first Townsend ionization coefficient and the longitudinal and transverse diffusion coefficients, so called transport parameters. These parameters are important since they allow the validation of electron collisional cross section with gas molecules, contribute for self-sustained discharge models and are important for gaseous detectors development. In the present work the results of electron drift velocity (W), ionization rate (Ri) and first Townsend coefficient (α) as a function of the reduced electric field for isobutane and n-butane by the means of pulsed Townsend technique are presented. In our experimental setup, the primary electrons are liberated by the irradiation of a short laser pulse at the cathode and are accelerated towards the anode through a uniform electric field. The electron movements induce signals that are digitalized and the fitting of a model function to their waveforms provides the transport parameters. The results obtained for isobutane and n-butane were compared with Magboltz 2-version 8.6 values, since there are few data in the literature for these gases for effective reduced electric field ranging from 130 to 180 Td.

O deslocamento de elétrons em gases pode ser caracterizado por grandezas macroscópicas tais como a velocidade de arrastamento, taxa de ionização, primeiro coeficiente de Townsend e os coeficientes de difusão longitudinal e transversal, que são denominados de parâmetros de transporte. Esses parâmetros são importantes já que permitem a validação das secções de choque de colisões de elétrons com as moléculas do gás, contribuem com informações para modelos de descargas automantidas e são importantes para o desenvolvimento de novos detectores gasosos. Neste trabalho são apresentados os resultados de velocidade de arrastamento (W), taxa de ionização (Ri) e do primeiro coeficiente Townsend de ionização (α), para o isobutano e n-butano em função do campo elétrico reduzido efetivo no intervalo de 130 a 180 Td, obtidos utilizando a técnica de Townsend pulsada. Em nosso aparato, os elétrons primários são gerados a partir da incidência no catodo de um curto pulso de laser e são acelerados em direção ao anodo por meio de um campo elétrico uniforme. O sinal elétrico proveniente do deslocamento desses elétrons é digitalizado por um osciloscópio e a partir do ajuste de uma função modelo à forma do sinal elétrico, determinam-se os parâmetros de transporte. Os resultados obtidos para o isobutano e n-butano foram comparados com os valores da simulação Magboltz 2-versão 8.6 em razão da escassez de dados na literatura para esses gases na região de campo elétrico reduzido estudada. / The electron swarm can be characterized by macroscopic quantities such as the drift velocity, ionization rate, first Townsend ionization coefficient and the longitudinal and transverse diffusion coefficients, so called transport parameters. These parameters are important since they allow the validation of electron collisional cross section with gas molecules, contribute for self-sustained discharge models and are important for gaseous detectors development. In the present work the results of electron drift velocity (W), ionization rate (Ri) and first Townsend coefficient (α) as a function of the reduced electric field for isobutane and n-butane by the means of pulsed Townsend technique are presented. In our experimental setup, the primary electrons are liberated by the irradiation of a short laser pulse at the cathode and are accelerated towards the anode through a uniform electric field. The electron movements induce signals that are digitalized and the fitting of a model function to their waveforms provides the transport parameters. The results obtained for isobutane and n-butane were compared with Magboltz 2-version 8.6 values, since there are few data in the literature for these gases for effective reduced electric field ranging from 130 to 180 Td.

Diamond is a promising material for high-power, high-frequency and high- temperature electronics applications, where its outstanding physical properties can be fully exploited. It exhibits an extremely high bandgap, very high carrier mobilities, high breakdown field strength, and the highest thermal conductivity of any wide bandgap material. It is therefore an outstanding candidate for the fastest switching, the highest power density, and the most efficient electronic devices obtainable, with applications in the RF power, automotive and aerospace industries. Lightweight diamond devices, capable of high temperature operation in harsh environments, could also be used in radiation detectors and particle physics applications where no other semiconductor devices would survive. The high defect and impurity concentration in natural diamond or high-pressure-high-temperature (HPHT) diamond substrates has made it difficult to obtain reliable results when studying the electronic properties of diamond. However, progress in the growth of high purity Single Crystal Chemical Vapor Deposited (SC-CVD) diamond has opened the perspective of applications under such extreme conditions based on this type of synthetic diamond. Despite the improvements, there are still many open questions. This work will focus on the electrical characterization of SC-CVD diamond by different measurement techniques such as internal photo-emission, I-V, C-V, Hall measurements and in particular, Time-of-Flight (ToF) carrier drift velocity measurements. With these mentioned techniques, some important properties of diamond such as drift mobilities, lateral carrier transit velocities, compensation ratio and Schottky barrier heights have been investigated. Low compensation ratios (ND/NA) < 10-4 have been achieved in boron-doped diamond and a drift mobility of about 860 cm2/Vs for the hole transit near the surface in a lateral ToF configuration could be measured. The carrier drift velocity was studied for electrons and holes at the temperature interval of 80-460 K. The study is performed in the low-injection regime and includes low-field drift mobilities. The hole mobility was further investigated at low temperatures (10-80 K) and as expected a very high mobility was observed. In the case of electrons, a negative differential mobility was seen in the temperature interval of 100-150K. An explanation for this phenomenon is given by the intervally scattering and the relation between hot and cold conduction band valleys. This was observed in direct bandgap semiconductors with non-equivalent valleys such as GaAs but has not been seen in diamond before. Furthermore, first steps have been taken to utilize diamond for infrared (IR) radiation detection. To understand the fundamentals of the thermal response of diamond, Temperature Coefficient of Resistance (TCR) measurements were performed on diamond Schottky diodes which are a candidate for high temperature sensors. As a result, very high TCR values in combination with a low noise constant (K1/f) was observed.

Over the past century the study of gas exchange rates between the atmosphere and the ocean has received increased attention because of concern about the fate of greenhouse gases such as CO2 released into the atmosphere. Of interest is the oceanic uptake of CO2 in shallow water coastal regions as biological productivity in these regions is on average about three times larger than in the open ocean. It is well-known that in the absence of breaking surface waves, the water side turbulence controls gas transfer of sparingly soluble gases such as CO2 from the air to the water. The dependence of gas transfer on wind-driven shear turbulence and convection turbulence generated by surface cooling has been investigated previously by others. However, the effect of Langmuir turbulence generated by wave-current interaction has not been investigated before. More specifically, Langmuir turbulence is generated by the interaction of the wind-driven shear current with the Stokes drift velocity induced by surface gravity waves. In this dissertation, large-eddy simulations (LES) of wind-driven shallow water flows with Langmuir turbulence have been conducted and scalar transport and surface scalar transfer dynamics analyzed. The scalar represents the concentration of a dissolved gas such as CO2 in the water. In flows with Langmuir turbulence, the largest scales of the turbulence consist of full-depth Langmuir circulation (LC), parallel downwind-elongated, counter-rotating vortices acting as a secondary structure to the mean flow. LES guided by the full-depth LC field measurements of Gargett & Wells (2007) shows that Langmuir turbulence plays a major role in determining scalar transport throughout the entire water column and scalar transfer at the surface. Langmuir turbulence affects scalar transport and its surface transfer through 1. the full-depth homogenizing action of the large scale LC and 2. the near-surface vertical turbulence intensity induced by the Stokes drift velocity shear. Two key parameters controlling the extent of these two mechanisms are the dominant wavelength (λ) of the surface waves generating the turbulence and the turbulent Langmuir number, Lat , which is inversely proportional to wave forcing relative to wind forcing. Furthermore, LES representative of the field measurements of Gargett et al. (2004) shows that Langmuir turbulence increases transfer velocity (a measure of mass transfer efficiency across the air-water interface) dramatically with respect to shear-dominated turbulence. Finally, direct resolution of the surface mass transfer boundary layer allows for the LES to serve as a testing ground for bulk parameterizations of transfer velocity. Several wellestablished parameterizations are tested and a new parameterization based on Stokes drift velocity shear is proposed leading to encouraging results.

Langmuir turbulence in the upper ocean is generated by the interaction between the wind-driven shear current and the Stokes drift velocity induced by surface gravity waves. In homogenous (neutrally stratified) shallow water, the largest scales of Langmuir turbulence are characterized by full-depth Langmuir circulation (LC). LC consists of parallel counter-rotating vortices aligned roughly in the direction of the wind. In shallow coastal shelves, LC has been observed engulfing the entire water column, interacting with the boundary layer and serving as an important mechanism for sediment re-suspension. In this research, large-eddy simulations (LES) of Langmuir turbulence with full-depth LC in a wind-driven shear current have revealed deviations from classical log-layer dynamics in the surface and bottom of the water column. For example, mixing due to full-depth LC induces a large wake region eroding the classical bottom (bed) log-law velocity profile. Meanwhile, near the surface, Stokes drift shear serves to intensify small scale eddies leading to enhanced mixing and disruption of the surface velocity log-law. The modified surface and bottom log-layer dynamics induced by Langmuir turbulence and full-depth LC have important implications on Reynolds-averaged Navier-Stokes simulations (RANSS) of the general coastal ocean circulation. Turbulence models in RANSS are typically calibrated under the assumption of log-layer dynamics, which could potentially be invalid during occurrence of Langmuir turbulence and associated full-depth LC. A K-Profile Parameterization (KPP) of the Reynolds shear stress in RANSS is introduced capturing the basic mechanisms by which shallow water Langmuir turbulence and full-depth LC impact the mean flow. Single water column RANS simulations with the new parameterization are presented showing good agreement with LES

Le transport des particules et de la chaleur dans la zone de bord des tokamaks joue un rôle déterminant à la fois sur les performances du plasma confiné et sur l’extraction de la puissance et ainsi la durée de vie des composants face au plasma. C’est dans ce contexte que s’inscrit ce travail de thèse, qui porte sur le rôle joué par les écoulements transverses au champ magnétique dans l’équilibre entre dynamique parallèle et dynamique perpendiculaire qui régit la région périphérique d’un tokamak. Ces écoulements peuvent produire des asymétries poloïdales du dépôt de chaleur et de particules sur les composants face au plasma, et plus généralement des asymétries des diverses quantités dans le plasma. Les vitesses de dérive radiale sont d’origine électrique (liées à la présence d’un champ électrique radial résultant de l’équilibre des charges) ou liées aux effets de la géométrie toroïdale induisant une inhomogénéité du champ magnétique (vitesse de gradient-courbure). Pour progresser dans la compréhension de ces phénomènes, la modélisation numérique du transport et de la turbulence en géométrie complexe est indispensable. En complément, des outils de diagnostic synthétique permettant de modéliser les processus de mesure dans les plasmas numériques sont développés pour permettre une comparaison réaliste entre modèles et expériences. La modélisation des vitesses de dérive perpendiculaire a été introduite dans le code SOLEDGE2D décrivant le transport de la densité, quantité de mouvement et énergie d’un plasma de tokamak. Nous avons d’abord étudié l’impact d’un champ électrique prescrit sur les équilibres plasma, pour comprendre les mécanismes à l’origine des asymétries du plasma et étudier l’établissement d’écoulement parallèle et d’asymétrie du dépôt de chaleur sur les composants face au plasma. Nous avons ensuite implémenté un modèle auto-consistant de résolution du potentiel électrique dans les équations fluides de SOLEDGE2D afin de comprendre l’équilibre du champ électrique et d’étudier l’effet de la configuration magnétique du tokamak et de la vitesse de gradient-courbure sur ce dernier. Dans la deuxième partie de cette thèse, un diagnostic synthétique permettant de modéliser les mesures expérimentales de rétro-diffusion Doppler a été développé et testé en vue d’être appliqué aux simulations du code fluide 3D turbulent, TOKAM3X. Ce diagnostic permet de mesurer la vitesse perpendiculaire du plasma à partir du mouvement des fluctuations de densité. Il a été utilisé ici pour comparer les asymétries de vitesse observées expérimentalement aux asymétries mesurées dans les simulations numériques. / The transport of heat and particles in the edge of tokamaks plays a key role in both the performance of the confined plasma and the extraction of power and thus the lifetime of the plasma facing components. It’s in this context that this thesis is inscribed, which focuses on the role played by the transverse magnetic field flows in the balance between parallel and perpendicular dynamic that governs the edge region of a tokamak. These flows can produce poloidal asymmetries of heat and particles deposit on plasma facing components and generally asymmetries of various amounts in plasma. The radial drift velocities are due to the presence of a radial electric field resulting from charge balance (electric drift velocity) or related to effects of the toroidal geometry inducing a magnetic field inhomogeneity (curvature drift velocity). To advance the understanding of these phenomena, numerical modeling of transport and turbulence in complex geometries is essential. In addition, synthetic diagnostic tools for modeling the measurement process in numerical plasmas are developed to enable a realistic comparison between models and experiments. Modeling of perpendicular drift velocities was introduced into the SOLEDGE2D code describing the transport of the density, momentum and energy of a tokamak plasma. We first studied the impact of a prescribed electric field on plasma equilibrium to understand the mechanisms behind plasma asymmetries and study the establishment of parallel flows and asymmetry of the heat flux on plasma facing components. Then we implemented a self-consistent model solving the electric potential in SOLEDGE2D fluid equations to understand the equilibrium of the electric field and to study the effect of the magnetic configuration of the tokamak and the curvature drift velocity on it. In the second part of this thesis, a synthetic diagnosis modeling the experimental measurements of Doppler backscattering was developed and tested in order to be applied to simulations of 3D turbulent fluid code TOKAM3X. This diagnosis measures the perpendicular velocity of the plasma from the movement of the density fluctuations. It was used to compare the perpendicular velocity asymmetries observed experimentally to asymmetries measured in numericalsimulations.

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Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (wide bandgap) semiconductors, make it desirable to develop single-crystalline epitaxial diamond films for electronic device and detector applications. Future diamond devices, such as power diodes, photoconductive switches and high-frequency field effect transistors, could in principle deliver outstanding performance due to diamond's excellent intrinsic properties. However, such electronic applications put severe demands on the crystalline quality of the material. Many fundamental electronic properties of diamond are still poorly understood, which severely holds back diamond-based electronic device and detector development. This problem is largely due to incomplete knowledge of the defects in the material and due to a lack of understanding of how these defects influence transport properties. Since diamond lacks a shallow dopant that is fully thermally activated at room temperature, the conventional silicon semiconductor technology cannot be transferred to diamond devices; instead, new concepts have to be developed. Some of the more promising device concepts contain thin delta-doped layers with a very high dopant concentration, which are fully activated in conjunction with undoped (intrinsic) layers where charges are transported. Thus, it is crucial to better understand transport in high-quality undoped layers with high carrier mobilities. The focus of this doctoral thesis is therefore the study of charge transport and related electronic properties of single-crystalline plasma-deposited (SC-CVD) diamond samples, in order to improve knowledge on charge creation and transport mechanisms. Fundamental characteristics such as drift mobilities, compensation ratios and average pair-creation energy were measured. Comparing them with theoretical predictions from simulations allows for verification of these models and improvement of the diamond deposition process.

AlGaAs/GaAs- und AlGaAs/GaAs/InGaAs-Quantengraben-Strukturen mit dotiertem Kanal sowie modulationsdotierte AlGaAs/InGaAs/GaAs- Heterostrukturen auf Halbleitermaterialien mit hoher Elektronendriftgeschwindigkeit werden erfolgreich zur Herstellung von Mikro-Hall-Bauelementen eingesetzt. Mit Blick auf ihre Eignung als Magnetfeldsensoren werden die Signal-Linearität, die Sensitivität und das Rauschen bei schwachen und starken elektrischen Feldern untersucht. Auch bei höheren elektrischen Feldern von mehr als 1.8 kV/cm zeigen die Bauelemente mit dotiertem Kanal eine ausgezeichnete Linearität des Signals. Magnetische Empfindlichkeiten von bis zu 600 V/A/T werden im Konstantstrombetrieb gemessen. Unter Verwendung eines Si-δ-dotierten pseudomorphen InGaAs-Quantengrabens wird sowohl eine bessere Sensitivität als auch ein besseres Rauschverhalten erzielt als bei homogen dotiertem GaAs-Kanal. Als beste Signal-Rausch-Empfindlichkeit wird ein Wert von 138 dB/T erreicht für ein Bauelement von 10·10 µm Fläche (bei 300 K, 100 kHz Messfrequenz und 1 Hz Bandbreite). Da das elektrische Verhalten dieser Strukturen besonders durch die hohen Elektronendriftgeschwindigkeiten bestimmt wird, tritt auch bei hohen elektrischen Feldern bis zu 2.4 kV/cm keine Degradation des Bauelementes auf. Als niedrigste Nachweisgrenze für Magnetfelder wird ein Wert von 127 nT/√Hz bestimmt. Verglichen damit, zeigen die modulationsdotierten Bauelemente von 20·20 µm Größe zwar eine höhere Signal-Rausch-Empfindlichkeit von 141 dB/T bei geringen elektrischen Feldern, die sich aber bei höheren Feldstärken stark verschlechtert. Daher haben die Bauelemente mit dotiertem Kanal und pseudomorph verspanntem InGaAs-Quantengraben unter Ausnutzung hoher Elektronendriftgeschwindigkeit bei hohen elektrischen Feldern einige Vorteile gegenüber den modulationsdotierten Strukturen mit hoher Elektronenbeweglichkeit. Untersuchungen der thermischen Stabilität von Bauelementen mit modulationsdotiertem Quantengraben zeigen, dass eine dicke InGaAs-Schicht (innerhalb fixierter Gesamtdicke des GaAs/InGaAs-Kanals) erforderlich ist, um die parasitäre Parallel-Leitfähigkeit des GaAs-Kanals zu vermeiden. Unter Berücksichtigung dieser Erkenntnis und bei Verwendung eines hohen Dotierungsgrades werden ausgezeichnete Temperaturstabilitäten von 90 ppm/K im Konstantstrombetrieb und 192 ppm/K im Konstantspannungsbetrieb erzielt. Unabhängig davon zeigen optische Untersuchungen mit Photolumineszenz-Spektroskopie und Raman-Streuung einen hohen Fehlordnungsgrad in dünnen InGaAs-Quantengräben, der dagegen für dicke pseudomorphe InGaAs-Schichten vernachlässigbar ist. Daher resultiert eine dickere InGaAs-Schicht nicht nur in einer höheren absoluten magnetischen Sensitivität und besseren thermischen Stabilität, sondern auch in geringerem 1/f-Rauschen als Ergebnis von Leitfähigkeitsfluktuationen. Besondere Anstrengungen werden unternommen zum Einsatz der Rauschspektroskopie tiefer Zentren zur Untersuchung der Qualität von Halbleitervolumina bzw. -schichten. In Kombination mit den Untersuchungen der betriebsstromabhängigen Sensitivität erweist sich diese Methode als am Besten geeignet für die Optimierung von Mikro-Hall-Bauelementen. Der Einfluss der Skalierung des Bauelementes auf seine Charakteristika wie Rauschen und magnetische Empfindlichkeit wird untersucht. Sowohl die Signal-Rausch-Empfindlichkeit als auch die Grenzempfindlichkeit sind größenabhängig. Der Einfluss der Geometrie auf die Verteilung des elektrischen Feldes wird für die Form eines Griechischen Kreuzes durch numerische Rechnungen simuliert und diskutiert. Abgerundete Ecken erweisen sich als am Besten geeignet für die Herstellung hochsensitiver und rauscharmer Mikro-Hall-Bauelemente. / Doped-channel quantum well (QW) AlGaAs/GaAs and AlGaAs/GaAs/InGaAs as well as modulation-doped AlGaAs/InGaAs/GaAs heterostructures based on high electron drift velocity semiconductors are successfully applied to the fabrication of micro-Hall devices. Considering these devices as magnetic sensors, their properties were characterized in terms of signal linearity, sensitivity and noise at low and high electric fields. Even at electric fields higher than 1.8 kV/cm, the doped-channel devices exhibit an excellent signal linearity. Magnetic sensitivities up to 600 V/T/A in current drive mode are measured. The usage of a Si-δ-doped pseudomorphic InGaAs QW results in better sensitivity and noise performance than does uniformly doped GaAs. A maximal signal-to-noise sensitivity (SNS) of 138 dB/T is achieved in 10 μm square size device at 300 K, 100 kHz frequency and 1 Hz bandwidth. Because the performance in these structures is driven in part by the high electron drift velocity, it does not degrade even at high electric fields up to 2.4 kV/cm and corresponds to a lowest detection limit of 127 nT/√Hz. Comparatively, the modulation-doped devices of 20 μm square size exhibit a higher SNS of 141 dB/T at low electric fields, but degrade at higher fields. Thus, the doped-channel pseudomorphically strained InGaAs QW high-velocity devices have several advantages over modulation-doped high-mobility structures at high electric fields. Thermal stability studies of doped-channel QW devices reveal a thick InGaAs layer (within a fixed total thickness of the GaAs/InGaAs channel) necessary to avoid the parasitic parallel conductivity in GaAs channel. Using this result and a high doping level, superior temperature stabilities of 90 ppm/K in the current drive mode and 192 ppm/K in the voltage drive mode are attained. Independently, optical studies like photoluminescence and Raman scattering reveal a high degree of disorder in thin InGaAs QWs, being negligible for thick pseudomorphic InGaAs layers. Hence, a thick InGaAs layer causes not only a higher absolute magnetic sensitivity and a better thermal stability, but also lower 1/f noise being a result of conductivity fluctuations. Special effort is devoted to the application of deep level noise spectroscopy as a very sensitive probe for semiconductor bulk and layer quality. Combined with supply-current-related sensitivity studies, this method is most suitable for micro-Hall device optimization. The effect of device scaling on device characteristics like noise and absolute magnetic sensitivity is studied. Both the SNS and detection limit are shown as size-dependent. Additionally, geometry effects on the electric field distribution for Greek cross shapes are simulated by numerical calculations and discussed. Rounded corners appear as most appropriate for the fabrication of highly sensitive low-noise micro-Hall devices.