Electroabsorption is the physical phenomenon by which the absorption of light in a medium can be controlled by applying an electric field. The Quantum–Confined Stark Effect, which makes the absorption band–edge in quantum wells very field–dependent, together with the strong absorption peak provided by excitons, are the physical foundations for the success of electroabsorption modulators based on quantum well structures in telecommunication networks. This thesis describes the design and fabrication of surface–normal electroabsorption modulation devices. The techniques needed to understand the design and fabrication of surface–normal multiple quantum well optical modulators are introduced, as are the various characterisation techniques used during and after the fabrication. Devices for several types of applications have been designed, fabricated, characterised and in some cases integrated into optical systems: – Two–dimensional arrays of 128´128 pixel amplitude modulators grown on GaAs substrates have been fabricated and characterised. Speeds of up to 11700 frames per second were demonstrated, limited by the output electronics of the computer interface. – Large–area modulators grown on GaAs substrates for free–space optical communication were developed, with an active area of 2cm2 and a modulation speed of several megahertz. Contrast ratios up to 5:1 on full modulator areas were measured. Problems limiting the yield and modulation speed of such devices have been studied, and solutions to overcome them have been demonstrated. – Large–area devices grown on InP substrates for free–space optical communication have been developed. Contrast ratios of up to 2:1 for transmissive types have been demonstrated. – Devices consisting of two rows of pixels, grown on GaAs substrates, with an active area of 22mm´5mm, divided into 64 or 128 pixels per row have been developed. These amplitude modulation devices were designed for optical signal processing applications. – One variant of these optical signal processing devices was also characterised as a ternary, binary amplitude and binary phase modulator array. – The use of GaAs multiple quantum well optical modulators in a free–space optical retro–communication system has been studied. An opto–mechanical design for a modulating retro–reflector is described, allowing a large field of view in one direction using reflecting, resonant–cavity modulators for high contrast ratios. / QC 20100802

Functional heterojunctions in organic electronic devices are interfaces formed either between a conducting electrode and an organic semiconductor or between two different organic semiconductors in blended and multilayered structures. This thesis is primarily concerned with the energy level alignment and the interfacial electronic structures at functional heterojunctions encountered in electronic devices made with solution-processable semiconducting polymers. Investigations on the electronic structures across these heterointerfaces are performed with the combined use of electromodulation and photoemission spectroscopic techniques. Electromodulation and ultraviolet photoemission spectroscopic techniques enable direct determination of the surface work functions of electrodes at the electrode/semiconducting polymer interfaces. We overcame the inherent problems faced by electromodulation spectroscopy, which undermine accurate determination of interfacial electronic structures, by performing electroabsorption (EA) measurements at reduced temperatures. We showed in this thesis that low-temperature EA spectroscopy is a surface sensitive technique that can determine the interface electronic structures in electrode/polymer semiconductor/electrode diodes. Using this technique, we demonstrated that the energy level alignments in these solution-processed organic electronic devices are determined by the surface work functions of passivated metals rather than by those of clean metals encountered in ultrahigh vacuum. This thesis also discloses our studies on the electronic structures in polymeric diodes with type II donor-acceptor heterojunctions using the EA spectroscopy. We showed that minimising meausurement temperature and attenuating EA illumination intensity enable accurate determinations of the electronic structures in these devices. We demonstrated that the electronic structures and the performance characteristics of multilayered polymer light-emitting diodes are also determined by the surface work functions of passivated metals. Our investigations confirm that electronic doping of the organic active layers, rather than minimisation of the Schottky barriers at electrode/polymer contacts, holds the key in realising high-performance organic light-emitting devices.

Segmented traveling wave electro-absorption modulators (TWEAMs) can provide a modulation speed above 100 Gb/s, which is needed in new optical communication networks. In the EU-project TWILIGHT, KTH continues the design work of TWEAMs in the EU-projects IPHOBAC and HECTO with the aim to design a new optical modulator to be integrated with an electronic layer. The structure of the modulator has to be changed in order to make it compatible with the integration technology that will be used in the project. Like in previous projects, the PSPICE software is an important tool for the design work. The past studies left a large amount of different models and test data. This thesis has been focused on studying these models and data to see if they can help the future work in the project. This includes the comparison of the geometrical dimensions, the microwave properties, and the simulation results with the fabricated modulators in the past projects. The electrical parameters are also critical for the design work, especially the capacitance which determines the impedance of the modulator. Since the TWILIGHT project needs a new design of the modulator, the calculation of these parameters will change. This thesis contains a study how this can be done and discusses the parameters for the new TWEAM design. / Segmenterade elektroabsorptionsmodulatorer för vandrande vågor (TWEAMs) kan ge moduleringshastigheter över 100 Gb/s, vilket behövs i nya optiska kommunikationsnätverk. I EU-projektet TWILIGHT fortsätter KTH designarbetet av TWEAMs i EU-projektet IPHOBAC och HECTO med syfte att designa en ny optisk modulator som ska integreras med ett elektronik-lager. Modulatorns struktur måste ändras för att den ska bli kompatibel med integrationstekniken som ska användas i projektet. Precis som i tidigare projekt är PSPICE-mjukvaran ett viktigt verktyg för designarbetet. Den tidigare studierna lämnade en stor mängd olika modeller och testdata. Detta examensarbete har fokuserat på att studera dessa modeller och data för att se om de kan hjälpa det framtida arbetet i projektet. Detta inkluderar jämförelsen av de geometriska dimensionerna, mikrovågsegenskaperna och simuleringsresultaten med de tillverkade modulatorerna i tidigare projekt. De elektriska parametrarna är också kritiska för konstruktionsarbetet, speciellt kapacitansen som bestämmer modulatorns impedans. Eftersom TWILIGHT-projektet har en ny design för modulatorn, ändras beräkningen av dessa parametrar. Detta examensarbete innehåller en studie hur detta kan göras och diskuterar parametrarna för den nya TWEAM-designen.

Inter-chip input-output (I/O) communication bandwidth demand, which rapidly scaled with integrated circuit scaling, has leveraged equalization techniques to operate reliably on band-limited channels at additional power and area complexity. High-bandwidth inter-chip optical interconnect architectures have the potential to address this increasing I/O bandwidth. Considering future tera-scale systems, power dissipation of the high-speed I/O link becomes a significant concern. This work presents a design flow for the power optimization and comparison of high-speed electrical and optical links at a given data rate and channel type in 90 nm and 45 nm CMOS technologies. The electrical I/O design framework combines statistical link analysis techniques, which are used to determine the link margins at a given bit-error rate (BER), with circuit power estimates based on normalized transistor parameters extracted with a constant current density methodology to predict the power-optimum equalization architecture, circuit style, and transmit swing at a given data rate and process node for three different channels. The transmitter output swing is scaled to operate the link at optimal power efficiency. Under consideration for optical links are a near-term architecture consisting of discrete vertical-cavity surface-emitting lasers (VCSEL) with p-i-n photodetectors (PD) and three long-term integrated photonic architectures that use waveguide metal-semiconductor-metal (MSM) photodetectors and either electro-absorption modulator (EAM), ring resonator modulator (RRM), or Mach-Zehnder modulator (MZM) sources. The normalized transistor parameters are applied to jointly optimize the transmitter and receiver circuitry to minimize total optical link power dissipation for a specified data rate and process technology at a given BER. Analysis results shows that low loss channel characteristics and minimal circuit complexity, together with scaling of transmitter output swing, allows electrical links to achieve excellent power efficiency at high data rates. While the high-loss channel is primarily limited by severe frequency dependent losses to 12 Gb/s, the critical timing path of the first tap of the decision feedback equalizer (DFE) limits the operation of low-loss channels above 20 Gb/s. Among the optical links, the VCSEL-based link is limited by its bandwidth and maximum power levels to a data rate of 24 Gb/s whereas EAM and RRM are both attractive integrated photonic technologies capable of scaling data rates past 30 Gb/s achieving excellent power efficiency in the 45 nm node and are primarily limited by coupling and device insertion losses. While MZM offers robust operation due to its wide optical bandwidth, significant improvements in power efficiency must be achieved to become applicable for high density applications.

We have presented a thorough experimental investigation of electroabsorption spectroscopy on quasi-one-dimensional organic molecular crystals such as PTCDA and MePTCDI vapor deposited thin films to clarify the involvement of the charge-transfer exciton in the lowest excited state. By a self-built experimental setup, two kinds of electroabsorption measurements, called "perpendicular" and "parallel" measurements, were conducted at room temperature in ambient air. The crystalline texture of PTCDA and MePTCDI thin film samples are characterized by X-ray diffraction measurements. Current-voltage, capacitance-frequency and capacitance-voltage measurements are performed to clarify the electric field distribution inside organic layers. The results from electrical measurements show that only under certain conditions (electroabsorption measurements with proDC bias), the perpendicular and parallel electroabsorption meaurements can be directly compared. The electroabsorption spectra of MePTCDI and PTCDA thin films can be interpreted by neither pure Frenkel exciton nor pure charge-transfer exciton model. Essential features of electroabsorption spectra of MePTCDI and PTCDA thin films can be understood by the the mixture of Frenkel and charge-transfer exciton model. However, there is still a discrepancy in the directional properties of electroabsorption signals between experimental results and modle calculations. This small discrepancy suggests that a full interpretation of electroabsorption spectra of quasi-one-dimensional organic molecular crystals needs further experimental and theoretical investigations.

We investigate the influence of the built-in voltage on the performance of organic bulk heterojuction solar cells that are based on a p-i-n structure. Electrical doping in the hole and the electron transport layer allows to tune their work function and hence to adjust the built-in voltage: Changing the doping concentration from 0.5 to 32 wt% induces a shift of the work function towards the transport levels and increases the built-in voltage. To determine the built-in voltage, we use electroabsorption spectroscopy which is based on an evaluation of the spectra caused by a change in absorption due to an electric field (Stark effect). For a model system with a bulk heterojunction of BF-DPB and C60, we show that higher doping concentrations in both the electron and the hole transport layer increase the built-in voltage, leading to an enhanced short circuit current and solar cell performance.

We investigate the influence of the built-in voltage on the performance of organic bulk heterojuction solar cells that are based on a p-i-n structure. Electrical doping in the hole and the electron transport layer allows to tune their work function and hence to adjust the built-in voltage: Changing the doping concentration from 0.5 to 32 wt% induces a shift of the work function towards the transport levels and increases the built-in voltage. To determine the built-in voltage, we use electroabsorption spectroscopy which is based on an evaluation of the spectra caused by a change in absorption due to an electric field (Stark effect). For a model system with a bulk heterojunction of BF-DPB and C60, we show that higher doping concentrations in both the electron and the hole transport layer increase the built-in voltage, leading to an enhanced short circuit current and solar cell performance.

We have presented a thorough experimental investigation of electroabsorption spectroscopy on quasi-one-dimensional organic molecular crystals such as PTCDA and MePTCDI vapor deposited thin films to clarify the involvement of the charge-transfer exciton in the lowest excited state. By a self-built experimental setup, two kinds of electroabsorption measurements, called "perpendicular" and "parallel" measurements, were conducted at room temperature in ambient air. The crystalline texture of PTCDA and MePTCDI thin film samples are characterized by X-ray diffraction measurements. Current-voltage, capacitance-frequency and capacitance-voltage measurements are performed to clarify the electric field distribution inside organic layers. The results from electrical measurements show that only under certain conditions (electroabsorption measurements with proDC bias), the perpendicular and parallel electroabsorption meaurements can be directly compared. The electroabsorption spectra of MePTCDI and PTCDA thin films can be interpreted by neither pure Frenkel exciton nor pure charge-transfer exciton model. Essential features of electroabsorption spectra of MePTCDI and PTCDA thin films can be understood by the the mixture of Frenkel and charge-transfer exciton model. However, there is still a discrepancy in the directional properties of electroabsorption signals between experimental results and modle calculations. This small discrepancy suggests that a full interpretation of electroabsorption spectra of quasi-one-dimensional organic molecular crystals needs further experimental and theoretical investigations.