Cet exposé est scindé en deux grandes parties. Dans la première, nous estimons des constantes photo-physiques du saphir dopé au titane à partir d'un modèle analytique simple exploitant une théorie de Huang-Rhys pour la détermination du profil spectral des bandes simples et une hypothèse réaliste de superposition de ces dernières. Nous déterminons une formule pour l'indice de réfraction total du Ti:saphir en fonction de la concentration de dopant. Dans une seconde partie, nous évaluons, selon la vérification d'un concept, la capacité de laser sana inversion de populations pour un cristal dopé possédant une basse symétrie. Nous appuyons notre démonstration en établissant une condition de seuil généralisée d'effet laser. Ce concept pourrait être une rupture technologique dans le domaine des grands cristaux dopés et n'a pas encore été investigué par la communauté. / This presentation is split into two main parts. In the first, we estimate photo-physical constants of titanium doped sapphire from a simple analytical model using a Huang-Rhys theory for the determination of the spectral profile of simple bands and from a realistic hypothesis of superposition of the latter. We define a formula for the total refractive index of Ti:sapphire as a function of dopant concentration. In a second part, we evaluate, according to the verification of a concept, the laser capability without population inversion for a doped crystal with low symmetry. We support our demonstration by establishing a generalized laser threshold condition. This concept would be a technological breakthrough in the field of large doped crystals and has not yet been investigated by the community.

In this dissertation, we employ a number of computational methods, including Ab Initio, Density Functional Theory, and Molecular Dynamics simulations to investigate key microscopic parameters that govern charge-transport and charge-generation in single-component and bimolecular charge-transfer organic semiconductors. First, electronic (transfer integrals, bandwidths, effective masses) and electron-phonon couplings of single-component organic semiconductors are discussed. In particular, we evaluate microscopic charge-transport parameters in a series of nonlinear acenes with extended pi-conjugated cores. Our studies suggest that high charge-carrier mobilities are expected in these materials, since large electronic couplings are obtained and the formation of self-localized polarons due to local and nonlocal electron-phonon couplings is unlikely. Next, we evaluate charge detrapping due to interaction with intra-molecular crystal vibrations in order to explain changes in experimentally measured electric conductivity generated by pulse excitations in the IR region of a photoresistor based on pentacene/C60 thin film. Here, we directly relate the nonlocal electron-phonon coupling constants with variations in photoconductivity. In terms of charge-generation from an excited manifold, we evaluate the modulation of the state couplings between singlet and triplet excited states due to crystal vibrations, in order to understand the effect of lattice vibrations on singlet fission in tetracene crystal. We find that the state coupling between localized singlet and correlated triplet states is much more strongly affected by the dynamical disorder due to lattice vibrations than the coupling between the charge-transfer singlet and triplet states. Next, the impact of Hartree-Fock exchange in the description of transport properties in crystalline organic semiconductors is discussed. Depending on the nature of the electronic coupling, transfer integrals and bandwidths can show a significant increase as a function of the amount of the Hartree-Fock exchange included in the functional. Similar trend is observed for lattice relaxation energy. It is also shown that the ratio between electronic coupling and lattice relaxation energy is practically independent of the amount of the Hartree-Fock exchange, making this quantity a good candidate for incorporation into tight-binding transport models. We also demonstrate that it is possible to find an amount of the Hartree-Fock exchange that recovers (quasi-particle) band structure obtained from a highly accurate G0W0 approach. Finally, a microscopic understanding of a phase transition in charge-carrier mobility from temperature independent to thermally activated in stilbene-tetrafluoro-tetracyanoquinodimethane crystal is provided.

In this thesis, a first-principles methodology to investigate the impact of electron-phonon interactions on the charge-carrier mobilities in organic molecular crystals has been developed. Well-known organic materials such as oligoacene and oligothienoacene derivatives were studied in detail. The nature of the intramolecular vibronic coupling in oligoacenes and oligothienoacenes was studied using an approach that combines high-resolution gas-phase photo-electron spectroscopy measurements with first-principles quantum-mechanical calculations. The electron interactions with optical phonons in oligoacene single crystals were investigated using both density functional theory and empirical force field methods. The low-frequency optical modes are found to play a significant role in dictating the temperature dependence of the charge-transport properties in the oligoacene crystals. The microscopic charge-transport parameters in the pentathienoacene, 1,4-diiodobenzene, and 2,6-diiodo-dithieno[3,2-<i>b</i>:2',3'-<i>d</i>]thiophene crystals were also investigated. It was found that the intrinsic charge transport properties in the pentathienoacene crystal might be higher than that in two benchmark high-mobility organic crystals, i.e., pentacene and sexithienyl. For 1,4-diiodobenzene crystal, a detailed quantum-mechanical study indicated that its high mobility is primarily associated with the iodine atoms. In the 2,6-diiododithieno[3,2-<i>b</i>:2',3'-<i>d</i>]thiophene crystal, the main source of electronic interactions were found along the π-stacking direction. For negatively charged carriers, the halogen-functionalized molecular crystals show a very large polaron binding energy, which suggests significantly low charge-transport mobility for electrons.

Les multicouches de graphène en empilement rhomboédrique sont considérés comme une phase prometteuse du carbone. Cela est due à la particularité de cette phase de pouvoir exhiber des états à forte corrélation électronique comme le magnétisme ou la supraconductivité à haute température critique. Ce qui est due, a son tour, à l’occurrence d’un état de surface avec une dispersion d’énergie électroniques quasi-nulle à proximité du niveau de Fermi. Malgré que le graphite Bernal soit la forme la plus stable du graphite, des échantillons a trois et quatre couches de graphène en empilement rhomboédrique ont pu être synthétisés. Plus récemment, des flocons d’épaisseur dépassant les 17 couches ont été isolés et provisoirement attribués à des séquences d’empilement rhomboédrique. Cette attribution à été faite via des expériences de spectroscopie Raman sous champ magnétique, bien que l’empreinte Raman des multicouche de graphène en empilement rhomboédrique est actuellement inconnue. Même le cas simple du spectre Raman résonnant à deux phonons (le pic 2D) du graphite Bernal n’est pas totalement compris. Dans ce travail de thèse, nous fournissons une description ab-initio complète du pic Raman 2D dans les systèmes de graphène à trois et quatre couches pour tous les empilements possibles, ainsi que pour le graphite Bernal, rhomboédrique et une alternance de graphite Bernal et rhomboédrique. / Multi-layer graphene with rhombohedral ABC stacking is considered as a promising carbon phase possibly displaying correlated states like magnetism or high-T c superconductivity due to the occurrence of an ultraflat electronic surface band at the Fermi level. Despite Bernal graphite being the most stable form of graphite, three and four layers graphene samples with rhombohedral stacking can be synthesized. Recently, flakes of thickness up to 17 layers were tentatively attributed ABC sequences although the Raman fingerprint of rhombohedral multilayer graphene is currently unknown and the 2D two-phonon resonant Raman spectrum of Bernal graphite not completely theoretically understood. Here we provide a complete first principles description of the 2D Raman peak in three and four layer graphene for all possible stackings, as well as for bulk Bernal, rhombohedral and an alternation of Bernal and rhombohedral graphite, that can be seen as a periodic sequence of ABA and ABC trilayers. Calculations for several laser energies are performed and we give practical prescriptions are proposed to identify long range sequences of ABC multi-layer graphene flakes.

No description available.

The thesis presents experimental studies of device characteristics and vibrational properties of atomic layer thin graphene and molybdenum disulphide (MoS2). We carried out Raman spectroscopic studies on field effect transistors (FET) fabricated from these materials to investigate the phonons renormalized by carrier doping thus giving quantitative information on electron-phonon coupling. Below, we furnish a synoptic presentation of our work on these systems. Chapter1: Introduction Chapter1, presents a detailed introduction of the systems studied in this the¬sis, namely single layer graphene (SLG), bilayer graphene (BLG) and single layer molybdenum disulphide (MoS2). We have mainly discussed their electronic and vibrational properties in the light of Raman spectroscopy. A review of the Raman studies on graphene layers is presented. Chapter2: Methodology and Experimental Techniques Chapter 2 starts with a description of Raman instrumentation. The steps for isolating graphene and MoS 2 flakes and the subsequent device fabrication procedures involving lithography are discussed in detail. A brief account of the top gated field effect transistor (FET) using solid polymer electrolyte is presented. Chapter3: Band gap opening in bilayer graphene and formation of p-n junction in top gated graphene transistors: Transport and Raman studies In Chapter3 the bilayer graphene (BLG) field effect transistor is fabricated in a dual gate configuration which enables us to control the energy band gap and the Fermi level independently. The gap in bilayer energy spectrum is observed through different values of the resistance maximum in the back gate sweep curves, each taken at a fixed top gate voltage. The gate capacitance of the polymer electrolyte is estimated from the experimental data to be 1.5μF/cm2 . The energy gap opened between the valence and conduction bands using this dual-gated geometry is es¬timated invoking a simple model which takes into account the screening of gate induced charges between the two layers. The presence of the controlled gap in the energy band structure along with the p-n junction creates a new possibility for the bilayer to be used as possible source of terahertz source. The formation of p-n junction along a bilayer graphene (BLG) channel is achieved in a electrolytically top gated BLG FET, where the drain-source voltage VDS across the channel is continuously varied at a fixed top gate voltage VT(VT>0). Three cases may arise as VDS is varied keeping VT fixed: (i) for VT-VDS0, the entire channel is doped with electron, (ii) for VT-VDS= 0, the drain end becomes depleted of carriers and kink in the IDS vs VDS curve appears, (iii) for VT-VDS « 0, carrier reversal takes place at the drain end, accumulation of holes starts taking place at the drain end while the source side is still doped with electrton. The verification of the spatial variation of carrier concentration in a similar top gated single layer graphene (SLG) FET device is done using spatially resolved Ra¬man spectroscopy. The signature 2D Raman band in a single layer graphene shows opposite trend when doped: 2D peak position decreases for electron doping while it increases for hole doping. On the other hand, the G mode response being symmetric in doping can act as a read-out for the carrier concentration. We monitor the peak position of the G and the 2D bands at different locations along the SLG FET channel. For a fixed top gate voltage V T , both G and the 2D band frequencies vary along the channel. For a positive VTsuch that VT-VDS= 0, the peak frequencies ωGand ω2DωG/2D occur at the undoped frequency (ωG/2D)n=0 near the drain end while the source end corresponds to non-zero concentration. When VT-VDS<0, Raman spectra from hole doped regions (drain end) in the channels show an blue-shift in ω2Dwhile from the electron doped regions (near source) ω2Dis softened. Chapter4: Mixing Of Mode Symmetries In Top Gated Bilayer And Multilayer Graphene Field Effect Devices In Chapter4, the effect of gating on a bilayer graphene is captured by using Raman spectroscopy which shows a mixing of different optical modes belonging to differ¬ent symmetries. The zone-center G phonon mode splits into a low frequency (Glow) and a high frequency (Ghigh) mode and the two modes show different dependence on doping. The two G bands show different trends with doping, implying different electron-phonon coupling. The frequency separation between the two sub-bands in¬creases with increased doping. The mode with higher frequency, termed as Ghigh, shows stiffening as we increase the doping whereas the other mode, Glow, shows softening for low electron doping and then hardening at higher doping. The mode splitting is explained in terms of mixing of zone-center in-plane optical phonons rep¬resenting in-phase and out-of-phase inter-layer atomic motions. The experimental results are combined with the theoretical predictions made using density functional theory by Gava et al.[PRB 80, 155422 (2009)]. Similar G band splitting is observed in the Raman spectra from multilayer graphene showing influence of stacking on the symmetry properties. Chapter5: Anomalous dispersion of D and 2D modes in graphene and doping dependence of 2D ′and 2D+G bands Chapter 5 consists of two parts: Part A titled “Doping dependent anomalous dispersion of D and 2D modes in graphene” describes the tunability of electron-phonon coupling (EPC) associated with the highest optical phonon branch (K-A) around the zone corner K using a top gated single layer graphene field effect transistor. Raman D and 2D modes originate from this branch and are dispersive with laser excitation energy. Since the EPC is proportional to the slope of the phonon branch, doping dependence of the D and 2D modes is carried out for different laser energies. The dispersion of the D mode decreases for both the electron and the hole doping, in agreement with the recent theory of Attaccalite et. al [Nano Letters, 10, 1172 (2010)]. In order to observe D-band in the SLG samples, low energy argon ion bombardment was carried out. The D peak positions for variable carrier concentration using top-gated FET geometry are determined for three laser energies, 1.96 eV, 2.41 eV and 2.54 eV. However, the dispersion of the 2D band as a function of doping shows an opposite trend. This most curious result is quantitatively explained us¬ing a fifth order process rather than the usual fourth order double resonant process usually considered for both the D and 2D modes. Part B titled “Raman spectral features of second order 2D’ and 2D+G modes in doped graphene transistor” deals with doping dependence of 2D’ and 2D+G bands in single layer graphene transistor. The phonon frequency blue shifts for the hole doping and whereas it red shifts for electron doping, similar to the behaviour of the 2D band. The linewidth of the 2D+G combination mode too follows the 2D trend increasing with doping while that of 2D’ mode remains invariant. Chapter6: New Raman modes in graphene layers using 2eV light Unique resonant Raman modes are identified at 1530 cm−1 and 1445 cm−1 in single, bi, tri and few layers graphene samples using 1.96 eV (633 nm) laser excitation energy (EL). These modes are absent in Raman spectra using 2.41 eV excitation energy. In addition, the defect-induced D band which is observed only from the edges of a pristine graphene sample, is observed from the entire sample region using E L = 1.96 eV. Raman images with peak frequencies centered at 1530 cm−1, 1445 cm−1 and D band are recorded to show their correlations. With 1.96 eV, we also observe a very clear splitting of the D mode with a separation of ∼32 cm−1, recently predicted in the context of armchair graphene nanoribbons due to trigonal warping effect for phonon dispersion. All these findings suggest a resonance condition at ∼2eVdue to homo-lumo gap of a defect in graphene energy band structure. Chapter7: Single and few layer MoS2: Resonant Raman and Phonon Renormalization Chapter 7 is divided into two parts. In Part A “Layer dependent Resonant Raman scattering of a few layer MoS2”, we discuss resonant Raman scattering from single, bi, four and seven layers MoS2. As bulk crystal of MoS2is thinned down to a few atomic layers, the indirect gap widens turning into a direct gap semiconductor with a band gap of 1.96 eV in its monolayer form. We perform Raman study from MoS 2 layers employing 1.96 eV laser excitation in order to achieve resonance condition. The prominent Raman modes for MoS 2 include first order E12g mode at ∼383 cm−1 and the A1gmode at ∼408 cm−1 which are observed under both non resonant and resonant conditions. A1gphonon involves the sulphur atomic vibration in opposite direction along the c axis (perpendicular to the basal plane) whereas for E12g mode, displacement of Mo and sulphur atoms are in the basal plane. With decreasing layer thickness, these two modes shifts in opposite direction, the E12g mode shows a blue shift of ∼2cm−1 while the A1gis red shifted by ∼4cm−1 . Under resonant condi¬tion, apart from E12g and A1gmodes, several new Raman spectral features, which are completely absent in bulk, are observed in single, bi and few layer spectra pointing out the importance of Raman characterization. New Raman mode attributed to the longitudinal acoustic mode belonging to the phonon branch at M along the Γ-M direction of the Brillouin zone is seen at ∼230 cm−1 for bi, four and seven layers. The most intense region of the spectrum around 460 cm−1 is characterized by layer dependent frequencies and spectral intensities with the band near 460 cm−1 becoming asymmetric as the sample thickness is increased. In the high frequency region between 510-630 cm−1, new bands are seen for bi, four and seven layers. In Part B titled “Symmetry-dependent phonon renormalization in monolayer MoS2transistor”, we show that in monolayer MoS2the two Raman-active phonons, A1g and E21 g, behave very differently as a function of doping induced by the top gate voltage in FET geometry. The FET achieves an on-off ratio of ∼ 105 for electron doping. We show that while E12g phonon is essentially unaffected, the A1gphonon is strongly influenced by the level of doping. We quantitatively understand our experimental results through the use of first-principles calculations to determine frequencies and electron-phonon coupling for both the phonons as a function of carrier concentration. We present symmetry arguments to explain why only A1g mode is renormalized significantly by doping. Our results bring out a quantitative under¬standing of electron-phonon interaction in single layer MoS2.

Cette thèse traite de la structure électronique de supraconducteurs telle que déterminée par la théorie de la fonctionnelle de la densité. Une brève explication de cette théorie est faite dans l’introduction. Le modèle de Hubbard est présenté pour pallier à des problèmes de cette théorie face à certains matériaux, dont les cuprates. L’union de deux théories donne la DFT+U, une méthode permettant de bien représenter certains systèmes ayant des électrons fortement corrélés. Par la suite, un article traitant du couplage électron- phonon dans le supraconducteur NbC1−xNx est présenté. Les résultats illustrent bien le rôle de la surface de Fermi dans le mécanisme d’appariement électronique menant à la supraconductivité. Grâce à ces résultats, un modèle est développé qui permet d’expliquer comment la température de transition critique est influencée par le changement des fré- quences de vibration du cristal. Ensuite, des résultats de calcul d’oscillations quantiques obtenus par une analyse approfondie de surfaces de Fermi, permettant une comparaison directe avec des données expérimentales, sont présentés dans deux articles. Le premier traite d’un matériau dans la famille des pnictures de fer, le LaFe2P2. L’absence de su- praconductivité dans ce matériau s’explique par la différence entre sa surface de Fermi obtenue et celle du supraconducteur BaFe2As2. Le second article traite du matériau à fermions lourds, le YbCoIn5. Pour ce faire, une nouvelle méthode efficace de calcul des fréquences de Haas-van Alphen est développée. Finalement, un dernier article traitant du cuprate supraconducteur à haute température critique YBa2Cu3O6.5 est présenté. À l’aide de la DFT+U, le rôle de plusieurs ordres magnétiques sur la surface de Fermi est étudié. Ces résultats permettent de mieux comprendre les mesures d’oscillations quan- tiques mesurées dans ce matériau. / In this thesis, the electronic structure of different kinds of superconductors is explored with the density functional theory. A brief explanation of this theory is done in the in- troduction. The Hubbard model is also presented as it can be used to solve shortcomings of the theory in some materials such as cuprates. The blend of the two theories is the DFT+U which is used to describe materials with strongly correlated electrons. After- ward, a paper describing the electron-phonon coupling in the superconductor NbC1−xNx is presented. Results from this work show the role of the Fermi surface in the electron pairing mechanism leading to superconductivity. Based on these results, a model is de- veloped explaining how the critical temperature is influenced by the change in frequency of the vibration modes. Then, quantum oscillation results based on a detailed analysis of Fermi surfaces, allowing a direct comparison with experimental data, are presented within two papers. The first one is about a material in the iron pnictide family, the LaFe2P2. Our calculations show that the Fermi surface of this material is different from the superconducting doped BaFe2As2 which explains why this material shows no sign of superconductivity. The second paper is about the heavy fermion system YbCoIn5. To do this, a new efficient method to calculate de Haas-van Alphen frequencies is developed. Finally, a paper on superconducting YBa2Cu3O6.5 is presented. Using DFT+U, the role of various magnetic orders on the Fermi surface are studied. The results allow a better understanding of the measured quantum oscillations in this material.

Cette thèse traite de la structure électronique de supraconducteurs telle que déterminée par la théorie de la fonctionnelle de la densité. Une brève explication de cette théorie est faite dans l’introduction. Le modèle de Hubbard est présenté pour pallier à des problèmes de cette théorie face à certains matériaux, dont les cuprates. L’union de deux théories donne la DFT+U, une méthode permettant de bien représenter certains systèmes ayant des électrons fortement corrélés. Par la suite, un article traitant du couplage électron- phonon dans le supraconducteur NbC1−xNx est présenté. Les résultats illustrent bien le rôle de la surface de Fermi dans le mécanisme d’appariement électronique menant à la supraconductivité. Grâce à ces résultats, un modèle est développé qui permet d’expliquer comment la température de transition critique est influencée par le changement des fré- quences de vibration du cristal. Ensuite, des résultats de calcul d’oscillations quantiques obtenus par une analyse approfondie de surfaces de Fermi, permettant une comparaison directe avec des données expérimentales, sont présentés dans deux articles. Le premier traite d’un matériau dans la famille des pnictures de fer, le LaFe2P2. L’absence de su- praconductivité dans ce matériau s’explique par la différence entre sa surface de Fermi obtenue et celle du supraconducteur BaFe2As2. Le second article traite du matériau à fermions lourds, le YbCoIn5. Pour ce faire, une nouvelle méthode efficace de calcul des fréquences de Haas-van Alphen est développée. Finalement, un dernier article traitant du cuprate supraconducteur à haute température critique YBa2Cu3O6.5 est présenté. À l’aide de la DFT+U, le rôle de plusieurs ordres magnétiques sur la surface de Fermi est étudié. Ces résultats permettent de mieux comprendre les mesures d’oscillations quan- tiques mesurées dans ce matériau. / In this thesis, the electronic structure of different kinds of superconductors is explored with the density functional theory. A brief explanation of this theory is done in the in- troduction. The Hubbard model is also presented as it can be used to solve shortcomings of the theory in some materials such as cuprates. The blend of the two theories is the DFT+U which is used to describe materials with strongly correlated electrons. After- ward, a paper describing the electron-phonon coupling in the superconductor NbC1−xNx is presented. Results from this work show the role of the Fermi surface in the electron pairing mechanism leading to superconductivity. Based on these results, a model is de- veloped explaining how the critical temperature is influenced by the change in frequency of the vibration modes. Then, quantum oscillation results based on a detailed analysis of Fermi surfaces, allowing a direct comparison with experimental data, are presented within two papers. The first one is about a material in the iron pnictide family, the LaFe2P2. Our calculations show that the Fermi surface of this material is different from the superconducting doped BaFe2As2 which explains why this material shows no sign of superconductivity. The second paper is about the heavy fermion system YbCoIn5. To do this, a new efficient method to calculate de Haas-van Alphen frequencies is developed. Finally, a paper on superconducting YBa2Cu3O6.5 is presented. Using DFT+U, the role of various magnetic orders on the Fermi surface are studied. The results allow a better understanding of the measured quantum oscillations in this material.

Hole-Burning (HB) und Fluorescence Line-Narrowing (FLN) bei 4.2 K sowie Experimente zur Temperaturabhängigkeit werden angewendet, um Energieniveaustruktur und Elektron-Phonon- Wechselwirkung im Antennenkomplex LHC II grüner Pflanzen zu untersuchen. Besondere Aufmerksamkeit gilt dabei der Vermeidung systematischer Meßfehler durch Reabsorption von Fluoreszenz oder durch Lichtstreuung und unerwünschtes Lochbrennen bei FLN-Experimenten. Durch die Auswertung von Lochspektren können erstmals drei niederenergetische elektronische Zustände bei 677.1, 678.4 und 679.8 nm nachgewiesen werden. Die inhomogene Breite der zugehörigen Absorptionsbanden beträgt etwa 4 nm. Wahrscheinlich stellt jeder dieser Zustände das tiefste Energieniveau einer Untereinheit des LHC II-Trimers dar und ist weitgehend an jeweils einem Chl a-Molekül lokalisiert. Die energetische Differenz zwischen den drei Zuständen kann durch strukturelle Heterogenität erklärt werden. Es kann nachgewiesen werden, daß die Meßergebnisse praktisch frei von Effekten durch unerwünschte Aggregation sind. Die homogene Linienbreite des energetisch tiefsten Zustandes bei 4.7 K wird vorwiegend durch phasenzerstörende Prozesse (pure dephasing) bestimmt. Die Lochbreiten innerhalb der 650 nm Absorptionsbande entsprechen Chl b-Chl a Energietransferzeiten von 1 ps und etwa 240 fs bei 4.2 K, während Lochbreiten innerhalb der 676 nm Absorptionsbande Chl a-Chl a Energietransferzeiten in der Größenordnung von 6-10 ps ergeben. In einer theoretischen Betrachtung werden die Beiträge zu Phonon-Seitenbanden bei HB und FLN separat analysiert. Auf dieser Grundlage können Ergebnisse von HB und FLN Experimenten an LHC II erstmals in einem konsistenten Modell durch schwache Elektron-Phonon-Wechselwirkung mit einem Huang-Rhys-Faktor von 0.9 und ein breites, stark asymmetrisches Ein-Phonon-Profil erklärt werden. / Spectral hole-burning (HB) is combined with fluorescence line-narrowing (FLN) experiments at 4.2 K and studies of temperature-dependent fluorescence spectra in order to investigate low-energy level structure as well as electron-phonon coupling of the LHC II antenna complex of green plants. Special attention has been paid to eliminate effects owing to reabsorption of fluorescence and to assure that the FLN spectra are virtually unaffected by hole-burning or scattering artifacts. For the first time, analysis of the 4.2 K hole spectra reveals three low-energy electronic states at 677.1, 678.4 and 679.8 nm, respectively. The inhomogeneous width of their absorption bands is approximately 4 nm. It is likely that each of these states is associated with the lowest energy state of one trimer subunit with the energetic separations being due to structural heterogeneity. It is likely that each of the low-energy states is highly localized on a single Chl a molecule of the corresponding trimer subunit. The results are shown to be virtually free from aggregation effects. The homogeneous width for the lowest state at 4.7 K is predominantly due to pure dephasing. Widths of holes burned into the 650 nm absorption band correspond to Chl b-Chl a energy transfer times of 1 ps and about 240 fs at 4.2 K while holewidths for the 676 nm absorption band lead to Chl a-Chl a energy transfer times in the 6-10 ps range. The complexities associated with the interpretation of the phonon structure in HB and FLN spectra are discussed by theoretically analyzing the different phonon sideband contributions. On this basis, 4.2 K HB and FLN data can be consistently interpreted for the first time by weak electron-phonon coupling with a Huang-Rhys factor of about 0.9 to protein phonons with a broad and strongly asymmetric one- phonon profile.

Im Rahmen dieser Doktorarbeit werden de Haas-van Alphen-Untersuchungen an den nichtmagnetischen Borkarbidsupraleitern LuNi2B2C und YNi2B2C präsentiert. Aus den Quantenoszillationen in der normalleitenden Phase in Kombination mit Bandstrukturrechnungen konnten Informationen über die verzweigte Fermiflächenarchitektur und über die Elektron-Phonon-Kopplung der Borkarbide gewonnen werden. Die Kopplung ist stark anisotrop und fermiflächenabhängig. Dies spricht für einen Mehrbandmechanismus der Supraleitung in der Materialklasse. Zusätzlich konnten de Haas-van-Alphen-Oszillationen mehrerer Fermiflächen unterhalb von Bc2 tief in der Shubnikov-Phase beobachtet werden. Das Verhalten dieser Oszillationen lässt sich nicht mit bisher bekannten Theorien beschreiben. Allerdings weist das Bestehen der Oszillationen weit unterhalb von Bc2 auf ein Bestehen von elektronischen Zuständen in der Shubnikov-Phase hin.