Esta tese compõe-se de contribuições à física das propriedades eletrônicas das heteroestruturas semicondutoras. São investigadas propriedades eletrônicas das duas hetero­estruturas básicas: o poço quântico e a super-rede. Considera-se o poço quântico dopado com impurezas rasas e estudam-se as suas propriedades eletrônicas nos regimes de poço fraca e altamente dopado. No caso de baixa densidade de impurezas é feita uma simulação Monte Carlo. É utilizado um modelo semi-clássico de band de impureza. A interação elétron-elétron é incluída de forma exata e são calculadas as seguintes propriedades do estado fundamental à temperatura zero: densidade de estados de uma partícula, distribuição de carga, energia de Fermi e distribuição do campo elétrico sobre os doadores neutros, todas em função do grau de compensação, da densidade de impurezas e da largura do poço. É observada uma. grande dependência com a compensação. Os resultados são explicados à luz da competição entre os efeitos de desordem e confinamento. É observada a ocorrência de Coulomb Gap característico de sistemas bidimensionais. Mostra-se que a. distribuição de carga possui largura e constante de decaimento determinados independentemente pela compensação e pela concentração de impurezas, respectivamente. Tais resultados são importantes para a caracterização de poços quânticos puros. No limite altamente dopado parte-se de um modelo light-binding desordenado e calcula­se a densidade de estados de uma partícula formada devido ao overlapping entre os estados localizados; utiliza-se o método de Matsubara e Toyosawa. para a obtenção da média sobre configurações. Discutem-se os efeitos da desordem diagonal introduzida pelo potencial de confinamento os quais são comparados com os da. desordem não-diagonal. São apresentados resultados para a densidade de estados em função do grau de confinamento e concentração de impurezas para poços e fios quânticos. Sâo estudadas as propriedades eletrônicas das super-redes sob campo magnético transversal à direção de crescimento. Mostra-se que esta configuração é ideal para o estudo das características básicas das super-redes: a estrutura de mini bandas e o tunelamento. Calculam-se as sub-bandas de condução utilizando a teoria de massa efetiva de muitas bandas. Introduz-se a idéia de massa efetiva renormalizada para barreiras semicondutoras. Comparam-se os resultados com dados experimentais de ressonância ciclotrônica. A ótima concordância obtida demonstra a grande importância e a utilidade do conceito de massa efetiva renormalizada para barreiras semicondutoras, que é uma maneira nova e simples de lidar com as soluções evanescentes. / This thesis is composed of contributions to the theory of electronic properties of semicon­ ductor heterostructures. Electronic properties of the basic two heterostructures (quantum well and superlattice) are investigated. A quantum well doped with shallow impurities is considered and its electronic properties are studied in both limits: lightly and heavily doped. In the first case a Monte Carlo simula­ tion technique is used. A semiclassical impurity band model is used . The electron-electron interaction is included exactly and properties of the ground state such as the density of single particle states, the charge distribution, the Fermi energy and the electric field di tribution on the neutra/ donors are calculated, all of them as a function of the degree of compensation, the impurity concentration and the width of the well. A great dependency with the compensation is observed. The results are explained by the competition between the effects of disorder and confinement. The existence of a Coulomb Gap is verified . The charge distribution is shown to have a width and decay rate given by the degree of compensation and impurity concentration, in this order. Such results are important to characterize pure quantum wells. On the heavily doped limit, a disordered tight-binding model is used and the density of states that is formed by the overlapping of localized states is calculated by using the method of Matsubara and Toyosawa for the configuration average. The diagonal disord er effect introduced by the confinement potential is considered and compared to that of the non­ diagonal disorder. Results of the density of states as a function of the degree of confinement and impurity concentration for quantum wells and wires are presented. The electronic propertie s of a superlattice under a magnetic field which is transversal to the growth direction are studied. Jt is shown that this configuration is id eal for the study of the basic characteristics of the superlattices: the subband structure and the tunneling. The conduction subbands are calculated by using the theory of many bands effective mass. The idea of renormalized effective mass for barriers is introduced. The obtained level spacings are compared with cyclotron resonance experimental data (infrared absorption). The good agreement obtained demonstrates the importance and usefulness of the renormalized effective mass, which is a new and simple way to handle evanescent waves.

For every phenomenon found in inorganic materials, organic counterparts have been found in the last 50 years. The discovery of metallic conductivity in the inorganic conjugated polymer (SN)x was a forerunner to the discovery of metallic conductivity in Polyacetylene [1]. It was soon followed by the development of Polypyrrole and Polythiophene, and by the rediscovery of Polyaniline as a conducting polymer [2]. In polymers like Polyacetylene and Polythiophene, doping is by a redox reaction where the incorporation of electron withdrawing groups creates charge carriers in the polymer backbone. In contrast to these polymers, the main doping mechanism in Polyaniline is protonation, that is the attachment of a proton (donated by an acid) to specific sites (imine and amine groups) in the polymer. The protonated groups are also the sites where water and oxygen interact with the charge carriers on the polymer chain. A wide variety of quasi-particle states (excitons, bipolarons, separated polarons and polaron lattice forms) exist in Polyaniline, in its different states of oxidation and protonation. All of them have different transport and optical signatures. Out of these, only the polaron lattice gives rise to a half-filled conduction band, and therefore a metallic state [3]. This fascinating interplay of protonation and metallic features in Polyaniline, combined with its easy processibility, has made Polyaniline an attractive conducting polymer. Therefore the main focus of this thesis is on the role of the dopant on the electronic and optical properties of doped Polyaniline. The first chapter describes the main features of Polyaniline and its doping by protonation. The second chapter describes the experimental and simulation methods used in this thesis. Steady improvements in processing have led to reduced disorder in the samples, and have given rise to stronger metallic features like metallic (Drude-like) reflectivity in the infrared frequencies, and a positive temperature coefficient of the logarithmic derivative of the conductivity. High molecular weight Polyaniline doped with sulfonic acid dopants by surfactant-counterion processing, like Polyaniline doped with AMPSA (2-acrylamido-2-methyl-1-propanesulfonic acid) [4] and cast from dichloroacetic acid (DCA), shows all the metallic features indicative of an intrinsic metallic state [5]. In this thesis, the third chapter describes the spin-charge dynamics of Polyaniline doped with AMPSA (PANIAMPSA) through X-band Electron Spin Resonance studies [6]. Electron Spin Resonance (ESR) is an important technique to probe the spin-charge dynamics of conducting polymers [7, 8]. The X-band ESR spectra of PANI doped with AMPSA showed the presence of two lines (one broad and one narrow) at all temperatures and doping levels, indicative of two types of spin carriers. Three interesting features were observed in our study: a large linewidth ( ~100 Gauss), a maximum of ESR linewidth at ~ 25 K, and a surprising independence of linewidth on water/O2 . The temperature dependence of both linewidths suggests that the broad line is due to the delocalised charge carriers in well-ordered regions, and that the narrow line is due to localised spins in the disordered regions in the sample. Although the XRD spectra showed minimal crystallinity, the ESR and SQUID susceptibility had a strong Pauli contribution, indicative of an intrinsic metallic state. A similarity of the temperature dependence of linewidths of PANI-AMPSA with MWNT-s and HOPG graphite suggested that some quasi-2-D (Q2D) ordering is present in PANI-AMPSA. From Semi-empirical molecular modelling studies, a plausible hydrogen bonding pattern is suggested that can give rise to the Q2D graphene-like arrangement of the PANI polymer chains. This ordering is due to hydrogen bonding between the acrylamido group of the dopant and the amine fragment of the Polyaniline backbone. Hydrogen bonds are not just structural linkers between adjacent chains; they can have subtle effects on electronic states of the polymer backbone due to charge transfer/withdrawal by the hydrogen bond from the delocalised β-electron system of the backbone. The same Q2D model is used to explain the water/oxygen independence of linewidth in PANI-AMPSA. The temperature dependence of linewidth of both lines has been explained in terms of the QTDG (Quasi Two Dimensional Graphite) model, where a strong exchange interaction is presumed to arise between the 2D delocalised charge carriers and the localised spins, leading to a low-temperature peak in the the linewidth. Water is known to significantly enhance the conductive properties of doped Polyaniline [9]. A detailed DFT (Density Functional Theory) modelling study of the influence of water in doped Polyanilines is presented, which clearly indicated that water enhances the charge transfer between the counterion and the polymer backbone. The torsion angles between the adjacent phenyl rings of the emeraldine base decrease when the imine nitrogens are protonated by inorganic acids like HCl and HBr, and hydration of the acid counterions further decrease the torsion angles. In contrast, the torsion angles of the AMPSA protonated Polyaniline are already low (comparable to the hydrated cases), and the charge transferred by AMPSA is also enhanced. Visualisation of the molecular structure of the PANI-AMPSA complex suggested that water molecules may play a minimal role in the electronic properties of AMPSA doped Polyaniline. We suggest the Q2D ordering as the reason for the temperature dependence of the linewidth, the lack of oxygen and water dependence of the linewidth, as well as the enhanced metallic properties in PANI-AMPSA, as compared to other doped Polyanilines. The electronic states of Polyaniline are modified by both redox processes and protonation. This gives rise to a wide variety of optical states, which can be easily accessed by both applied potential and pH [10]. Therefore Polyaniline displays strong electrochromism across the visible, near-IR (NIR), IR and even microwave spectral regions. This feature has wide applications in electrochromic devices. However, a fundamental understanding of the phenomena behind this electrochromism, the charge carrier(s) responsible, and the relation of nanoscopic morphology and electrochemical properties to the electrochromism, is still not clear. In the fourth chapter, we have analysed extensive data from electrochromic devices [11]. Clear assignments are that certain population states contribute predominantly to certain spectral regions (e.g. bipolaron states to the IR, the valence band to the visible and other mid-gap states to the microwave). Among more specific findings, a prominent 7µm (0.16 eV) peak in MIR devices is ascribed to bipolarons, while a low-energy transition at 0.054 eV is ascribed to inter/intra-chain transitions. Each of these transitions is tracked with respect to changes in applied potential, as well as correlated with device morphology and construction. Our analysis of UV-Vis-MIR-FIR-microwave results along with detailed SEM data clearly relates performance in different wavelength regions to morphology. Preliminary kinetics analysis show that the diffusion rates in these devices could be improved further. These findings point to the potential design of very broad-band electrochromic systems encompassing the visible through microwave regions. Polyaniline in its insulating states can be considered as a series of linked oligoanilines. These oligoaniline states can either be considered as a model for describing the properties of the polymer, or can be interesting systems themselves in the light of single-molecular electronic devices [12]. Both applied potential and pH can change the electronic states of these systems. The ability of pH to modify the oxidation states in these systems (and induce electronic transport), and the influence of water on these properties can be a model for biological systems too. While a wealth of information on oligoanilines has been generated from experiments, computational modelling of these systems is less reported. Among many computational methods that have been developed for calculation of optical absorption spectra of molecules, Time Dependent Density Functional Theory (TDDFT) is the method with the widest use. TDDFT obtains the excitation energies of a molecule from the linear response of the electronic density to a external perturbing field [13]. Solvent effects, which are known to affect the excitation energies, are included through the SCRF/PCM (Self-consistent Reaction Field/ Polarizable Continuum Model). PCM is a method that treats the solvent molecules as a continuum, and self-consistently evaluates their electronic distribution around the solute. In the fifth chapter, a systematic study of the optical properties of neutral oligoaniline, in three oxidation states, is performed by varying the chain length and linearity of the backbone. The intrinsic accuracy in the excitation energies obtainable by the combined TDDFT/PCM formalism has enabled us to suggest effective oligomer lengths for the optical transitions in Polyaniline; these are 4 rings for emeraldine base, 4–8 rings for leucoemeraldine base and 4 rings for pernigraniline. The sensitivity of the 2.0 eV exciton peak in emeraldine base to the chemical environment is also apparent from this work. The Valence Density of States (VDOS) and vibrational frequencies, that have been obtained in course of these simulations, have been quantitatively analysed and are a useful addition to understanding the optical properties of neutral Polyanilines. A summary of the results of the dopant and water dependence on the electronic and structural properties of protonated oligoanilines was presented in the third chapter; the appendix describes the methodology in detail. It is worthwhile to emphasize that doped Polyaniline is a system where protonation, hydration and extended β-conjugation all occur together synergistically, and a good overall description of this system is necessary. Modelling the doped state of Polyaniline is a bit more difficult, due to spin polarisation. Ideally, conducting Polyaniline should be modelled in the solid state, with neighbouring chains, counterions and water molecules. Water is known to reversibly increase the macroscopic conductivity and ESR linewidth of doped Polyaniline. In the sixth chapter of this thesis, optical spectra of the bipolaron, separated polaron, and the polaron lattice forms of doped Polyaniline, explicitly including the counterions (Cl, Br, AMPSA) are obtained by the TDDFT method. All the polaronic lattice forms show a dominant absorption at 1.0–1.2 eV, with no absorptions in the range 1.4–2.0 eV. The inclusion of water molecules to solvate the counterions is shown to only weakly modify the optical properties in the polaron lattice form. In the case of polarons on a twisted chain, the 1.0 eV peak is shifted to 1.5 eV. For bipolarons, there is an absorption at 1.3–1.5 eV, along with another peak at 1.8 eV. Comparing with experimental spectra we suggest that the 1.5, 2.8 eV set belongs to a polaron lattice form wherein the chains are twisted. However, individually the 1.5 eV peak may equally come from bipolarons or separated polarons. The peak at 1.8 eV may either be ascribed to a bipolaron form (in which case there should be a 1.5 eV peak too), or to an isolated polaron. The isolated polaron may also show a peak at 2 eV and 3.5 eV that is clearly from a residual emeraldine base electronic state. The steady evolution of the (a) 2 eV exciton peak in emeraldine base to a (b) 1.6– 1.8 eV peak (isolated polarons) to a (c) 1.5 eV peak in the bipolaron form to (d) 1.3 eV peak in the separated polaron form to (e) a 1.0–1.2 eV peak in the fully doped metallic polaron lattice form is clear. This steady evolution observed from TDDFT simulations may help in clarifying the experimental assignments, especially in electrochemical studies on Polyaniline. Simulations including the water molecules were performed to study the experimentally observed dramatic changes on hydration in Polyaniline. However hydration of ions is a dynamic process and static geometries may not provide a fully realistic description. Combined ab initio Molecular Dynamics (AIMD) and TDDFT calculations may be necessary to realistically model the transport properties of doped Polyaniline. This chapter tries to lay a foundation for such work. The main results obtained in this thesis are summarized in the conclusion. To conclude, this thesis is on the electronic and optical properties of Polyaniline. An ESR study on AMPSA doped Polyaniline indicated a unique 2D nanoscopic morphology, and this structure was validated by molecular modelling. The detailed analyses on electrochromic devices led us to perform TDDFT simulations of neutral and doped Polyanilines. These simulations have resulted in clear UV-VIS-IR assignments in all forms of Polyaniline.

Organic conjugated systems are attractive because of wide range of applications, which includes stimulated emission from -conjugated polymers, optical switches, organic solar cells and organic light emitting diodes, to name a few. They have the advantage of low cost, ease of processing and tunability of their linear and nonlinear optical properties by functionalization with donor or acceptor groups. In chapter 1, we provide an introduction to the π-conjugated systems and various interesting phenomena observed in these systems, This is followed by a brief description of the application of the above mentioned -conjugated systems for organic light emitting diodes, and organic photovoltaic cells. In the last section of this chapter, we give an introduction to magnetism due to π-electron systems. In chapter 2, we begin with energy band theory in one-dimension and its drawbacks. We introduce various model Hamiltonians which incorporate electron-electron inter-actions like Hubbard model, and Pariser-Parr-Pople (PPP) model. We present numerical techniques like valence-bond (VB) and constant MS techniques that are used to exactly solve the above model Hamiltonian. This is followed by an introduction to density matrix renormalization group method (DMRG) employed for the above model Hamiltonian for larger system in one-dimension and quasi-one-dimension. We give description of linear and nonlinear optical properties followed by the oriented gas model for ensemble of molecules. Various methods for computing polarizabilities and hyperpolarizibilities of molecules includes such as Finite-Field method, Sum-Over-State Method, and Correction Vector (CV) Methods are described in detail. In chapter 3, we look into fused azulene systems as a possible organic multiferroics. Azulene molecule with fused five and seven membered π-conjugated rings has a dipole moment, and the π-framework has geometric frustration. Hence in fused azulenes we can expect both ferroelectric and magnetic ground state. To explore this, we study low-lying correlated electronic states of fused azulenes using the long-range interacting PPP model and the finite DMRG method. The ground state is a singlet for oligomers up to 5 azulene units. For oligomers with more than 5 azulene units and up to 11 azulene units the oligomers have a triplet ground state. From the excitation gaps between the lowest MS = 0 state and the lowest states in MS=1, 2, and 3 sectors we predict that the ground-state spin of the fused azulene increases with the number of azulene units. In the thermodynamic limit, we expect the fused azulene to be a ferromagnet. Charge density calculations show that the ground state of the system has ferroelectric alignment of the dipoles of the monomeric units. Thus, a fused azulene system could be the first example of an organic molecule which is both ferromagnetic and ferroelectric, in the ground state. In chapter 4, we study the linear and nonlinear optical properties of diradical systems. We have studied linear and non-linear optical properties of π-conjugated diradicals because they are expected to exhibit large non-linear responses. The system studied are oligomers of dicyclopenta-fused acenes (DPA) and the s-indaceno[1,2,3-cd;5,6,7-c'd']diphenalene (IDPL) molecule. Spin-spin correlation functions within a correlated PPP model Hamiltonian, using exact diagonalization method, are used to characterize the diradical nature of DPA-2 and similar calculations on Anthracene have been performed to contrast this with a singlet character. The diradical character of DPA-2 is also manifest as low optical gap, low spin gap and large THG coefficients compared to Anthracene molecule. Larger DPA-k, k > 2, oligomers as well as the IDPL molecule have been studied within the DMRG technique. In the DPA-4, we nd a very small spin gap (0.04 eV), while in the oligomers with k > 4, we nd that the ground state is degenerate with the lowest triplet state. The energy of the second excited triplet state decreases with increasing size k and seems to saturate at ~0.36 eV in the thermodynamic limit. The lowest optical gap in DPA-4 is at 1.94 eV and has large transition dipoles, while for DPA-k, 4 < k ≥ 28, we have not been able to access states with large transition dipoles. The weak low-energy excitations seem to saturate at 0.5 eV and the two-photon gap also seems to be saturating at~ 0.3 eV in the thermodynamic limit. These polymers will not be IR uorescent by Kasha rule. The dominant component of the THG coefficient, γxxxx, is highest for DPA-4 which reduces almost by an order of magnitude in DPA-8; for k > 8 it increases up to the largest system with k=20 for which we have computed the coe cient. The variation of the charge gap of DPA oligomer with the increase in system size is small and in the polymer limit the charge gap is 4:24 eV. For IDPL molecule spin gap is 0.20 eV and next excited triplet state is at 1.48 eV. Two lowest singlet states in B space are nearly degenerate and have large transition dipole moments. Optical gaps to the above states are 2.20 eV and 2.22 eV. Two-photon gap in this system is 1.29 eV, hence this system is also non- uorescent. We calculated the dispersion of the major component of the THG coefficient, γxxxx, over a wide frequency range for this molecule, and we observe resonances corresponding to the 21Ag and 11Bu states. Extrapolated value of γxxxx at zero frequency is 15:58 x 106 a.u which is very large and the system does not have any donor or acceptor substituent groups. In chapter 5, we study absorption spectra and two photon absorption coefficient of expanded porphyrins (EPs). We nd that in the 4n+2 EPs there are two prominent low-lying one-photon excitations while in 4n systems there is only one such excitation. The two-photon gaps in both these types of systems are at energies close to the one-photon excitations. The spin gap in 4n+2 EPs are very small although the spin-1/2 Heisenberg calculations show that a pure spin system in this geometry will not have vanishing spin-gap. The charge density rearrangement in the one-photon excited state is most at the aza nitrogen site and at the meso carbon sites. In the two-photon states also the charge density rearrangement occurs mostly at the aza-ring sites. The bond order changes in these states is much more striking. In the one-photon state, the C-C bond length in the aza rings show a tendency to become uniform. Similar qualitative trend is also observed for the two-photon state. In chapter 6, we study linear and nonlinear optical properties of two push-pull polyenes stacked in head to head (HtH) and head to tail con gurations (HtT), at different stacking angles, exactly within the PPP model. Varying the stacking angle between polyenes, we nd that the optical gap varies slightly, but transition dipoles show large variation. The dominant component of first-order hyperpolarizability, βxxx for HtH and βyyy for HtT arrangement strongly depend on the distance between molecules. The βxxx for HtH configuration shows a maximum at a nonzero stacking angle, which varies with inter polyene distance. ZINDO study on two monomers, (4-hydroxy-40-nitro-azobenzene) connected by a conjugated bridge shows that βav is more than twice the monomer value and with a red-shift in the optical gap. In chapter 7, we have calculated the shifts in optical gaps and band edges as a function of the distance between two monomers within a correlated PPP model Hamiltonian for various stacking geometries. We have used as model monomers, both unsubstituted polyenes and push-pull substituted polyenes. We have carried out calculations with and without inter-chain hopping between sites on different molecules. We note that in the absence of inter-chain hopping, the energy level shifts are almost independent of the distances between the chains in all stacking geometries. It is also interesting to note that only electron-electron interactions yield a blue shift in the optical gaps for parallel stacking, but red shift in the gap for all other stacking geometries. We note that most of the shift in the gap is due to shifts in the excited state energy and the ground-state energy remains almost the same. With interchain transfer the shift in the optical gap increases with decrease in the interchain distance. We observe red-shifts in parallel stacking geometry when inter-chain electron hopping is turned on, at small interchain separations. In general interchain hopping increases significantly the red shift in the optical gaps for all geometries. Even for push-pull polyenes of | e| =2.0 eV, we observe the same trend in the shift in the optical gap for various stacking geometries. In this case the shift in optical gap is an order of magnitude higher when interchain hopping is turned on compared to that in the absence of interchain hopping. We find that the optical gap shifts are largest for the parallel stacking geometry, and it also shows stronger distance dependence. This is in close conformity with experimental observation of red-shift in absorption maxima when hydrostatic pressure is applied on the system. The shift in the HOMO (LUMO) level is small in the absence of t?, and the largest shift is in the case of parallel stacking compared to other stacking geometries. The distance dependence of the HOMO shifts is also rather weak. When t? is turned on, the level shifts become large by a factor of five or more. When we have push-pull groups electron-hole symmetry is broken and the shift is different for the HOMO and the LUMO level. Depending upon stacking geometry, the HOMO shifts vary from 0:1 ~ eV to 0.3 eV, which is larger than the shifts observed in unsubstituted polyenes. This large shift in the LUMO reduces the efficiency of exciton dissociation.

Discovery of grapheme has paved way for experimental realization of many physical phenomena such as massless Dirac fermions, quantum hall effect and zero-field conductivity. Search for other two dimensional (2D) materials led to the discovery of boron nitride, transition metal dichalcogenides(TMDs),transition metal oxides(MO2)and silicene. All of these materials exhibit different electronic and transport properties and are very promising for nanodevices such as nano-electromechanical-systems(NEMS), field effect transistors(FETs),sensors, hydrogen storage, nano photonics and many more. For practical utility of these materials in electronic and photonic applications, varying the band gap is very essential. Tuning of band gap has been achieved by doping, functionalization, lateral confinement, formation of hybrid structures and application of electric field. However, most of these techniques have limitations in practical applications. While, there is a lack of effective method of doping or functionalization in a controlled fashion, growth of specific sized nanostructures (e.g., nanoribbons and quantum dots),freestanding or embedded is yet to be achieved experimentally. The requirement of high electric field as well as the need for an extra electrode is another disadvantage in electric field induced tuning of band gap in low dimensional materials. Development of simpler yet effective methods is thus necessary to achieve this goal experimentally for potential application of these materials in various nano-devices. In this thesis, novel methods for tuning band gap of few 2D materials, based on strain and stacking, have been proposed theoretically using first principles based density functional theory(DFT) calculations. Electronic properties of few layered nanomaterials are studied subjected to mechanical and chemical strain of various kinds along with the effect of stacking pattern. These methods offer promising ways for controlled tuning of band gap in low dimensional materials. Detailed methodology of these proposed methods and their effect on electronic, structural or vibrational properties have also been studied. The thesis has been organized as follows: Chapter1 provides a general introduction to the low dimensional materials: their importance and potential application. An overview of the systems studied here is also given along with the traditional methods followed in the literature to tune their electronic properties. The motivation of the current research work has also been highlighted in this chapter. Chapter 2 describes the theoretical methodology adopted in this work. It gives brief understanding of first principles based Density Functional Theory(DFT) and various exchange and correlation energy functionals used here to obtain electronic, structural, vibrational and magnetic properties of the concerned materials. Chapter 3 deals with finding the origin of a novel experimental phenomenon, where electromechanical oscillations were observed on an array of buckled multiwalled carbon nanotubes (MWCNTs)subjected to axial compression. The effect of structural changes in CNTs in terms of buckling on electronic properties was studied. Contribution from intra-as well as inter-wall interactions was investigated separately by using single-and double-walled CNTs. Chapter 4 presents a method to manipulate electronic and transport properties of graphene bilayer by sliding one of the layers. Sliding caused breaking of symmetry in the graphene bilayer, which resulted in change in dispersion in the low energy bands. A transition from linear dispersion in AA stacking to parabolic dispersion in AB stacking is discussed in details. This shows a possibility to use these slid bilayers to tailor graphene based devices. Chapter 5 develops a method to tune band gap of bilayers of semiconducting transition metal dichalcogenides(TMDs) by the application of normal compressive strain. A reversible semiconductor to metal(S-M) transition was reported in this chapter for bilayers of TMDs. Chapter 6 shows the evolution of S-M transition from few layers to the bulk MoS2 under various in-plane and out of plane strains. S-M transition as a function of layer number has been studied for different strain types. A comparison between the in-plan and normal strain on modifying electronic properties is also presented. Chapter 7 discusses the electronic phase transition of bulk MoS2 under hydrostatic pressure. A hydrostatic pressure includes a combined effect of both in-plane and normal strain on the structure. The origin of metallic transition under pressure has been studied here in terms of electronic structure, density of states and charge analysis. Chapter 8 studies the chemical strain present in boron nitride nanoribbons and its effect on structural, electronic and magnetic properties of these ribbons. Properties of two achiral (armchair and zig-zag) edges have been analyzed in terms of edge energy and edge stress to predict stability of the edges. Chapter9 summarizes and concludes the work presented in this thesis.

Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than charge in next generation electronics. Applying angle-resolved photoelectron spectroscopy, we show that the silicon surface of GdRh2Si2 bears two distinct 2DESs, one being a Shockley surface state, and the other a Dirac surface resonance. Both are subject to strong exchange interaction with the ordered 4f-moments lying underneath the Si-Rh-Si trilayer. The spin degeneracy of the Shockley state breaks down below ~90 K, and the splitting of the resulting subbands saturates upon cooling at values as high as ~185 meV. The spin splitting of the Dirac state becomes clearly visible around ~60 K, reaching a maximum of ~70 meV. An abrupt increase of surface magnetization at around the same temperature suggests that the Dirac state contributes significantly to the magnetic properties at the Si surface. We also show the possibility to tune the properties of 2DESs by depositing alkali metal atoms. The unique temperature-dependent ferromagnetic properties of the Si-terminated surface in GdRh2Si2 could be exploited when combined with functional adlayers deposited on top for which novel phenomena related to magnetism can be anticipated.

MSc (Physics) / Department of Physics / Titanium dioxide (TiO2) is considered to be an ideal semiconductor for photocatalysis because of its high stability, low cost and safety towards both humans and the environment. Doping TiO2 with different elements has attracted much attention as the most important way of enhancing the visible light absorption, in order to improve the efficiency of the dye sensitized solar cells (DSSCs). In this study, first principle density functional theory was used to investigate electronic and optical properties of bulk anatase TiO2, undoped, and ruthenium (Ru) and strontium (Sr) doped anatase TiO2 (1 0 0) surface. Two different doping approaches i.e., substitutional and adsorption mechanisms were considered in this study. The results showed that absorption band edges of Ru and Sr-doped anatase TiO2 (1 0 0) surface shift to the long wavelength region compared to the bulk anatase TiO2 and undoped anatase TiO2 (1 0 0) surface. Also, the results revealed that the band gap values and the carrier mobility in the valence band, conduction band and impurity energy levels have a synergetic influence on the visible-light absorption and photocatalytic activity of the doped anatase TiO2 (1 0 0) surface. Furthermore, according to the calculated results, we propose the optical transition mechanisms of Ru and Sr-doped anatase TiO2 (1 0 0) surface. Thus, we conclude that the visible light response of TiO2 can be modulated by doping with both Ru and Sr. However, Sr-doped system shows higher photocatalytic activity than the Ru-doped system. The study has successfully probed the interesting optical response mechanism of TiO2 (1 0 0) surface. / NRF

Dans ce travail de thèse, nous illustrons la pertinence de la technique de photoémission pour l'étude des propriétés électroniques des matériaux. Dans la première partie, nous détaillons le développement et la phase de tests d'un nouveau bâti expérimental composé d'une chambre d'épitaxie par jets moléculaires (MBE) ainsi que d'une chambre de photoémission résolue en angle et en spin (SR-ARPES), connecté au tube Daum à l'Institut Jean Lamour. Les hautes performances de ce nouveau dispositif sont d'une part évaluées par une série de mesures expérimentales sur un système connu de la littérature (état de Shockley à la surface de l'Au(111)), et d'autre part illustrées par l'analyse de matériaux originaux (isolants topologiques, effet Kondo moléculaire …). Les valeurs de résolution en énergie sont inférieures à 2 meV et 300 meV pour la photoémission utilisant les rayonnements UV (UPS) et X (XPS) respectivement. La résolution angulaire est quant à elle meilleure que 0,2° et la température minimale atteignable est de 8,7 K. Finalement, des premières mesures de SR-ARPES ont démontré la capacité de ce nouveau bâti à mesurer les détails les plus fins de la structure de bandes polarisée en spin, se rapprochant ainsi de l'état de l'art dans le domaine. Ce nouveau dispositif est donc pleinement opérationnel. La seconde partie est consacrée à l'étude d'un oxyde de silicium ultra-mince bidimensionnel (2D) à la surface d'un substrat monocristallin de Ru(0001). Nous étudions tous les stades de croissance en partant du substrat nu de Ru(0001) jusqu'à une bicouche cristalline de cet oxyde, par XPS haute résolution (rayonnement synchrotron) et photoémission résolue en angle (ARPES). Nous confirmons la structure atomique établie dans la littérature pour ce système à la monocouche, avec en particulier l'existence de deux types de liaisons inéquivalentes Si-O-Ru révélées par des mesures inédites d’XPS haute résolution au niveau de la raie de cœur de l'O1s. En outre, nos mesures ARPES mettent en évidence l'existence d'états dispersifs bidimensionnels propres à ce matériau 2D. Alors que la monocouche est fortement connectée au substrat de ruthénium (liaisons covalentes), la bicouche en est déconnectée (liaisons de van der Waals). Notre étude confirme l'existence d’une telle transition avec des signatures claires à la fois en XPS et en ARPES, démontrant notamment la disparition des liaisons Si-O-Ru. Nous démontrons également la robustesse de ce système, qui une fois cristallisé peut être remis à l'air sans modifications majeures de ses propriétés électroniques, lui donnant ainsi un fort potentiel de fonctionnalisation (par exemple au sein d'hétérostructures 2D complexes comme couche isolante). Finalement, dans une troisième partie nous nous intéressons aux aspects théoriques de la photoémission résolue en angle. Alors que la structure de bandes est périodique dans l'espace réciproque, ce n'est pas le cas de l'intensité de photoémission, qui peut présenter des variations complexes dépendant de nombreux paramètres. Ces aspects sont généralement mal compris par les expérimentateurs. Nous présentons ici un modèle simple récemment proposé qui s'inscrit dans une description en trois étapes du processus de photoémission, et qui permet d'évaluer les éléments de matrice à un électron. Ces éléments de matrice représentent l'ingrédient essentiel permettant de comprendre la répartition du poids spectral en photoémission. Nous démontrons que dans ce modèle ils sont proportionnels à la transformée de Fourier de l'état de Wannier du système considéré, ainsi qu'à un terme de polarisation contenant les effets géométriques inhérents à toute expérience de photoémission. Nous appliquons alors cette approche à des systèmes physiques comme le graphène, ou encore au cas de mesures de dichroïsme circulaire réalisées au niveau des états d et de l'état de Shockley d'un monocristal de Cu(111), mettant ainsi en évidence ses succès et ses limitations / In this work, we highlight the relevance of photoemission spectroscopy for investigating the electronic properties of materials. In the first part, we tackle the development and the test phase of a new experimental setup which is composed of a molecular beam epitaxy (MBE) and a spin and angle resolved photoemission (SR-ARPES) chambers, connected to the tube at the Institut Jean Lamour. The high performances of this new setup are evaluated. On one hand by measuring well known system from the litterature (Shockley state at the Au(111) surface) and on the other hand by studying materials with novel properties (topological insulators, molecular Kondo effect …). Energy resolution is better than 2 meV for UV photoemission (UPS) and 300 meV for X-ray photoemission (XPS). We also have an angular resolution better than 0.2° and a lowest sample temperature of 8.7 K. Finally, first SR-ARPES measurements demonstrate the ability of this new installation to measure finest details of the spin polarized band structure. In short, this new setup is fully operationnal. The second part is dedicated to the study of a two dimensionnal (2D) ultra thin silicon oxide at the surface of a cristalline Ru(0001) substrate. Both growth and electronic properties are studied by high resolution XPS and ARPES. We confirm the structural model accepted for the system in the litterature for the monolayer case. In particular we confirm the existence of two inequivalent Si-O-Ru bonds with unprecedented high resolution XPS measurements on the O1s core level. In addition, our ARPES measurements highlight new dispersives states with 2D character which are unambiguously attributed to this oxide. While the monolayer is strongly connected to the ruthenium substrate (covalent bonds), the bilayer is disconnected from this latter one (van der Waals). Our work confirms the existence of such a transition with unambiguous signatures both in XPS and ARPES, in particular with the breaking of Si-O-Ru bonds. We also demonstrate the robustness of this system which, after being cristallised, can go to atmosphere without fundamental modification of his electronic properties. That gives a lot of potential applications to this 2D cristalline oxide, which could play in the futur the role of a wide band gap insulator in 2D heterostructures. In the last part, we focus on the theoretical aspects of photoemission. While band structure is periodic in the reciprocal space, it is not the case of photoemission intensity which can depend on a lot of parameters. We are motivated by the fact that these considerations are generally not well understood by experimentalists. Here, we present a simple model recently proposed in the three step approach of the photoemission process. With this model we can evaluate the one-electron matrix elements which play a key role to understand the variations of spectral weight in photoemission. In this approach, one-electron matrix elements are proportionnal to both Fourier transform of the Wannier state of the system and to a polarization term. We apply this model to « real » systems, in particular to graphene and to circular dichroism measurements on Cu(111) sample, highlighting sucess and limitations of this model

We report the use of imidazolium based tunable aryl alkyl ionic liquids (TAAILs) as solvents in the Mizoroki–Heck reaction. Different commercially available palladium sources, inorganic bases, TAAILs and reaction conditions were tested for the synthesis of trans-stilbene using bromobenzene and styrene. A variety of different stilbene derivatives were synthesized with exclusive formation of the (E)-isomers and isolated yields up to 97%. We were able to optimize the reaction conditions using only 0.25 mol% of Pd(OAc)2 as the catalyst and a reaction time of 4 hours. No additional ligands or additives are used in the reaction. The catalytic system using TAAILs achieved higher yields than commercially available imidazolium and phosphonium ionic liquids, demonstrating the potential of tailored ionic liquids as a reaction medium for the Mizoroki– Heck reaction.

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Cette thèse présente une étude des propriétés électroniques de systèmes de basse dimension à base de métaux et de semiconducteurs. La première partie de l'étude traite le confinement de l'état de Shockley dans des nanostructures tridimensionnelles d'Ag(111), par des mesures STM/STS à très basse température (5 K). Nous avons d'abord analysé en détail la structure en énergie et la distribution spatiale des modes confinés. Nous avons ensuite mis à profit la nature discrète du spectre en énergie pour étudier le temps de vie des quasiparticules. Un comportement typique de liquide de Fermi est mis en évidence, et nous montrons que le mécanisme de diffusion dominant est associé au couplage électron-phonon. La contribution extrinsèque provenant du confinement partiel de l'onde électronique a également été obtenue. Une loi d'échelle est observée avec la taille des nanostructures, ce qui permet d'extraire un coefficient de réflexion plus important que dans de simples ilôts monoatomiques. La seconde partie de l'étude est consacrée aux couches ultra-minces semiconductrices obtenues par dépôts d'alcalins (K, Rb, Cs) sur la surface Si(111):B-[racine]3. Ce travail résout la controverse concernant la nature de l'état fondamental de ce système, et notamment l'origine de la reconstruction 2[racine]3 obtenue à la saturation du taux de couverture. La compréhension en amont de la structure cristallographique permet d'élucider les propriétés électroniques. Nous montrons qu'une approche à un électron, conduisant à un isolant de bandes, décrit le système de manière convaincante, malgré l'indication de forts effets polaroniques. Ce résultat est le fruit d'une étude approfondie combinant des techniques diverses et complémentaires (LEED, ARPES, XPS, STM/STS et calcul DFT) / This thesis is devoted to the electronic properties of low-dimensional systems based on metal and semiconducting materials. The first part deals with the Shockley state confinement in Ag(111) nanostructures, by means of very-low temperature (5 K) STM/STS measurements. We study the electronic structure and spatial distribution of the confined modes. Then the discrete nature of the electronic spectrum allows one to yield the quasiparticule lifetime. A Fermi-liquid behaviour is evidenced and we show that the dominant decay mechanism is attributed to the electron-phonon coupling. The extrinsic contribution arising from the partial confinement of the electronic wave is obtained as well. A scaling law with the nanostructure width is demonstrated, from which we deduce a higher reflection amplitude than in monoatomic islands. In the second part of the thesis, we study semiconducting ultra-thin films produced by alkali (K, Rb, Cs) deposition on the Si(111):B-[root of]3 surface. This work solves the controversy concerning the ground state of this system, and especially the nature of the 2[root of]3 surface recontruction obtained at saturation coverage. Prior understanding of the crystallographic structure allows to elucidate the electronic properties. We show that a one-electron picture, leading to a band insulator scenario, gives a good description of the system, in spite of strong polaronic effects. This conclusion results from an in-depth, combined study of complementary techniques (LEED, ARPES, XPS, STM/STS and DFT calculations).