Flour-etyl-L-tyrosin positronemissionstomografi (FET-PET) undersökning är en undersökningsmetod som har hög sensitivitet och specificitet vid diagnostisering av bland annat tumör och tumörrecidiv. För att bestämma FET-upptaget i tumören kan tumör till bakgrundsförhållande (TBR) beräknas. TBR är förhållandet mellan upptag i tumör och upptaget i grå och vit substans. Syftet med studien var att kartlägga hur olika rekonstruktioner påverkar värdet av TBR vid FET-PET undersökningar genom att studera TBR vid olika tidsintervall och sex olika rekonstruktioner. Vid genomförande av studien inkluderades 15 patienter med FET-upptag som genomgått FET-PET undersökning i Klinisk Neurofysiologi på Skånes Universitetssjukhus (SUS) i Lund. Hela undersökningstiden 30 minuter, sista 20 minuter samt sista 15 minuter testades för att se om dagens bildtagningsprotokoll går att optimera. Rekonstruktionsmetoderna QClear (QC) och Ordered Subset Expectation Maximization (OSEM) användes i studien. Vid beräkning av TBR-värden användes standardiserade upptagsvärden (SUV). För att beräkna TBR ritades region av intresse (ROI), ROIthreshold samt ROIsfär, över tumörområdet samt i frisk grå och vit substans i den kontralaterala hemisfären, för att bestämma FET-upptaget i förhållande till varandra. TBR beräknades utifrån maximala (SUVmax) och medelvärdet (SUVmedel) i ROI och benämns som TBRmax och TBRmedel. Resultatet av studien visade att ett lägre -värde för QC erhåller högre TBR-värden. TBR-värdena för rekonstruktionsmetoden OSEM låg mellan TBR-värdena för QC-rekonstruktionerna. Medelvärdet av den procentuella skillnaden, av alla patienter, mellan TBR-värden och de olika tiderna, för respektive rekonstruktionsmetod låg mellan 5-10 %. Detta indikerar att mängden injicerad aktivitet till patienten alternativt undersökningstiden kan minskas. Den maximala procentuella skillnaden av TBRmax och TBRmedel för ROIthreshold respektive ROIsfär mellan de olika rekonstruktionerna för alla tre tiderna och alla 15 patienterna, låg mellan 25-40 %. Medelvärdet av den procentuella skillnaden av TBRmax och TBRmedel för ROIthreshold respektive ROIsfär mellan de olika rekonstruktionerna för alla tre tiderna och alla 15 patienterna, låg mellan 15-25 %. Slutsatsen för denna studie är att den kvantitativa bedömningen av TBR-värdet varierar beroende på använd rekonstruktionsmetod. / Flourethyl-L-tyrosine positron emission tomography (FET-PET) examination is an examination method that has high sensitivity and specificity in diagnosing tumors and tumor recurrence. Tumor-to-background-ratio (TBR) could be calculated to determine FET-uptake in the tumor. TBR is the ratio between uptake in tumor and uptake in gray and white matter. The purpose of the study was to identify how different reconstructions affect the value of TBR in FET-PET examinations by studying the TBR-value at different time intervals and six different reconstructions algorithms. In the study, 15 patients were included, all with FET-uptake and all had performed a FET-PET examination at the department of Clinical Neurophysiology at Skåne University Hospital (SUS) in Lund. The entire examination time 30 minutes, the last 20 minutes and the last 15 minutes were tested to evaluate if the imaging protocol used today can be optimized. The reconstruction methods used in the study were QClear (QC) and Ordered Subset Expectation Maximization (OSEM). Standardized uptake values (SUV) were used during the calculation of TBR-values. To calculate TBR, the region of interest (ROI), ROIthreshold and ROIsphere were drawn. ROIthreshold and ROIsphere were drawn over the tumor area and in grey- and white matter in the contralateral hemisphere, to determine FET-uptake in relation to each other. The TBR-value was calculated based on maximum- (SUVmax) and mean values (SUVmedel) in ROI and is referred as TBRmax and TBRmean. The results of the study showed that a lower -value for QC obtains higher TBR-values. The TBR-values for the OSEM reconstruction method were between the TBR-values of the QC reconstruction methods. The mean value of the percentage difference, of all patients, between TBR-values and the different times, for each reconstruction method were between 5-10 %. These results indicate that the amount of injected activity to the patient or the examination time can be reduced. The maximum difference in percentage of TBRmax and TBRmean for ROIthreshold respective ROIsphere between the reconstructions for the tree times and all the 15 patients, were between 25-40 %. The mean percentage difference of TBRmax and TBRmean for ROIthreshold respective ROIsphere between the reconstructions for the tree times and all the 15 patients, were between 15-25 %. The conclusion of this study is that the TBR-value will vary with different reconstruction methods.

This master´s thesis deals with possibilities of application of new organic molecular materials for electronic devices. Nowadays it is a very attractive field of research, because of the tendencies in industry to miniaturize, reduce production costs and develop new, eco-friendlier, processes of production. The theoretical part of the thesis provides a short overview of organic materials suitable for smart applications and thin films issues including their characterization. The experimental part is dedicated to means how to prepare thin-film electronic components to silicon wafers for thin films field effect transistors. The obtained results in the last part of thesis are discussed about properties of prepared thin films, in the concrete about the electrical transport properties, in the connection with the condition of preparation.

In zahlreichen lebenswichtigen Bereichen haben sich Biosensoren als unverzichtbare Messgeräte erwiesen. Der Nachweis von spezifischen Molekülen im Körper für eine frühzeitige Krankheitserkennung erfordert empfindliche und zugleich zuverlässige Messmethoden. Ein rasantes Fortschreiten im Bereich der Nanotechnologie führt dabei zur Entwicklung von Materialien mit neuen Eigenschaften, und damit verbunden, auch zu innovativen Anwendungsmöglichkeiten im Bereich der Biosensorik. Das Zusammenspiel von Nanotechnologie und Sensortechnik gewährleistet die Konstruktion von Sensoren mit empfindlicheren Nachweisgrenzen und kürzeren Reaktionszeiten. Die Option zur Integration und Miniaturisierung stellen daher einen erfolgreichen Einsatz in direkter Patientennähe in Aussicht, sodass Nanobiosensoren die Brücke zwischen Laborddiagnostik und Standardanwendungen schließen können. Die folgende Arbeit widmet sich der Anwendung von nanostrukturierten Biosensoren für einen empfindlichen und markierungsfreien Nachweis von Zielmolekülen. Ein Hauptaugenmerk liegt dabei auf der kontinuierlichen Messung von Biomarkern mit kompakten Auslesesystemen, die eine direkte Signalmeldung und somit eine Detektion in Echtzeit ermöglichen. Dies erfordert zunächst die sorgfältige Funktionalisierung von Sensoroberflächen mit geeigneten DNA-basierten Rezeptoren. Infolgedessen werden beispielhaft verschiedene Sensorsysteme, Analyten und Charakterisierungsmethoden vorgestellt sowie universelle Strategien für die erfolgreiche Konfiguration von Nanobiosensorplattformen präsentiert. Das erste Anwendungsbeispiel widmet sich einem plasmonischen Biosensor, bei dem vertikal ausgerichtete Gold-Nanoantennen Signale mittels sog. lokalisierter Oberflächenplasmonenresonanz (LSPR) erzeugen. Mit dem Sensor konnte erfolgreich die Immobilisierung, das nachträgliche Blocken sowie die anschließende Hybridisierung von DNA nachgewiesen werden. Mithilfe des LSPR-Sensors wurden gleichzeitig grundlegende Hybridisierungsmechanismen auf nanostrukturierten und planaren Oberflächen verglichen und damit verbunden die einzigartigen optischen Eigenschaften metallischer Nanostrukturen betont. In einem zweiten Anwendungsbeispiel misst ein elektrischer Biosensor kontinuierlich die Konzentration des Stressmarkers Cortisol im menschlichen Speichel. Der direkte, markierungsfreie Nachweis von Cortisol mit Silizium-Nanodraht basierten Feldeffekttransistoren (SiNW FET) wurde anhand zugrunde liegender Ladungsverteilungen innerhalb des entstandenen Rezeptor-Analyte-Komplexes bewertet, sodass ein Nachweis des Analyten innerhalb der sog. Debye-Länge ermöglicht wird. Die erfolgreiche Strategie zur Oberflächenfunktionalisierung im Zusammenspiel mit dem Einsatz von SiNW FETs auf einem tragbaren Messgerät wurde anhand des Cortisolnachweises im Speichel belegt. Ein übereinstimmender Vergleich der gemessenen Corisolkonzentrationen mit Werten, die mit einer kommerziellen Alternative ermittelt wurden, verdeutlichen das Potential der entwickelten Plattform. Zusammenfassend veranschaulichen beide vorgestellten Nanobiosensor-Plattformen die vielseitige und vorteilhafte Leistungsfähigkeit der Systeme für einen kontinuierlichen Nachweis von Biomarkern in Echtzeit und vorzugsweise in Patientennähe.:Kurzfassung I Abstract III Abbreviations and symbols V Content VII 1 Introduction 1 1.1 Scope of the thesis 4 1.2 References 6 2 Fundamentals 9 2.1 Biosensors 9 2.2 Influence of nanotechnology on sensor development 10 2.3 Biorecognition elements 12 2.3.1 Biorecognition element: DNA 13 2.3.2 Aptamers 14 2.3.3 Immobilization of receptors 15 2.4 Transducer systems 17 2.4.1 Optical biosensors - surface plasmon resonance 17 2.4.2 Electric Biosensors – Field-effect transistors (FETs) 21 2.5 Metal oxide semiconductor field-effect transistor - MOSFET 21 2.6 Summary 26 2.7 References 27 3 Materials and methods 33 3.1 Plasmonic biosensors based on vertically aligned gold nanoantennas 33 3.1.1 Materials 33 3.1.2 Manufacturing of nanoantenna arrays 34 3.1.3 Surface modification and characterization 35 3.1.4 Measurement setup for detection of analytes 38 3.2 SiNW FET-based real-time monitoring of cortisol 40 3.2.1 Materials 40 3.2.2 Manufacturing of silicon nanowire field effect transistors (SiNW FETs) 42 3.2.3 Integration of SiNW FETs into a portable platform 42 3.2.4 Biomodification and characterization of electronic biosensors SiNW FETs 42 3.2.5 Electric characterization of FETs 47 3.3 References 50 4 Plasmonic DNA biosensor based on vertical arrays of gold nanoantennas 51 4.1 Introduction - Optical biosensors operating by means of LSPR 53 4.2 Biosensing with vertically aligned gold nanoantennas 56 4.2.1 Sensor fabrication, characterization, and integration 56 4.2.2 Integration of microfluidics 58 4.2.3 Immobilization of probe DNA and backfilling 58 4.2.4 Hybridization of complementary DNA strands 62 4.2.5 Surface coverage and hybridization efficiency of DNA 69 4.2.6 Refractive index sensing 72 4.2.7 Backfilling and blocking 73 4.3 Summary 75 4.4 References 77 5 Label-free detection of salivary cortisol with SiNW FETs 83 5.1 Introduction 85 5.2 Design, integration, and performance of SiNW FETs into a portable platform 89 5.2.1 Structure and electrical characteristics of honeycomb SiNW FETs 89 5.2.2 Integration of SiNW FET into a portable measuring unit 91 5.2.3 Performance of SiNW FET arrays 93 5.3 Detection of biomolecules with SiNW FETs 102 5.3.1 General considerations for biodetection with FETs 102 5.3.2 Sensing aptamers with FETs 103 5.3.3 Biodetection of the analyte cortisol with SiNW FETs 104 5.3.4 Detection of cortisol with SiNW FETs 112 5.4 Summary 119 5.5 References 121 6 Summary and outlook 131 6.1 Summary 131 6.2 Perspectives – toward multiplexed biosensing applications 134 6.3 References 137 Appendix i A.1 Protocols i A.1.1 Functionalization of gold antennas with thiolated DNA i A.1.2 Functionalization of SiO2 with TESPSA and amino-modified receptors i A.1.3 Functionalization with APTES and carboxyl-modified receptors ii A.1.4 Preparation of microfluidic channels via soft lithography ii A.2 Predicted secondary structures iv A.2.1 Secondary structures of 100base pair target without probe-strands iv A.2.2 Secondary structures of 100base pair target with 25 base pair probe-strand x Versicherung xvii Acknowledgments xix List of publications xxi Peer-reviewed publications xxi Publications in preparation xxi Selected international conferences xxii Curriculum Vitae xxiii / Biosensors have proven to be indispensable in numerous vital areas. For example, detecting the presence and concentration of specific biomarkers requires sensitive and reliable measurement methods. Rapid developments in the field of nanotechnology lead to nanomaterials with new properties and associated innovative applications. Thus, nanotechnology has a far-reaching impact on biosensors' development, e.g., delivery of biosensing devices with greater sensitivity, shorter response times, and precise but cost-effective sensor platforms. In addition, nanobiosensors hold high potential for integration and miniaturization and can operate directly at the point of care - serving as a bridge between diagnostics and routine tests. This work focuses on applying nanostructured biosensors for the sensitive and label-free detection of analytes. A distinct aim is the continuous monitoring of biomarkers with compact read-out systems to provide direct, valuable feedback in real-time. The first step in achieving this goal is the adequate functionalization of nanostructured sensor surfaces with suitable receptors to detect analytes of interest. Due to their thermal and chemical stability with the possibility for customizable functionalization, DNA-based receptors are selected. Thereupon, universal strategies for confining nanobiosensor platforms are presented using different sensor systems, analytes, and characterization methods. As a first application, a plasmonic biosensor based on vertically aligned gold nanoantennas tracked the immobilization, blocking, and subsequent hybridization of DNA by means of localized surface plasmon resonance (LSPR). At the same time, the LSPR sensor was used to evaluate fundamental hybridization mechanisms on nanostructured and planar surfaces, emphasizing the unique optical properties of metallic nanostructures. In a second application, an electric sensor based on silicon nanowire field-effect transistors (SiNW FET) monitored the level of the stress marker cortisol in human saliva. Based on evaluating the underlying charge distributions within the resulting receptor-analyte complex of molecules, the detection of cortisol within the Debye length is facilitated. Thus, direct, label-free detection of cortisol in human saliva using SiNW FET was successfully applied to the developed platform and compared to cortisol levels obtained using a commercial alternative. In summary, both presented platforms indicate a highly versatile and beneficial performance of nanobiosensors for continuous detection of biomarkers in real-time and preferably point-of-care (POC).:Kurzfassung I Abstract III Abbreviations and symbols V Content VII 1 Introduction 1 1.1 Scope of the thesis 4 1.2 References 6 2 Fundamentals 9 2.1 Biosensors 9 2.2 Influence of nanotechnology on sensor development 10 2.3 Biorecognition elements 12 2.3.1 Biorecognition element: DNA 13 2.3.2 Aptamers 14 2.3.3 Immobilization of receptors 15 2.4 Transducer systems 17 2.4.1 Optical biosensors - surface plasmon resonance 17 2.4.2 Electric Biosensors – Field-effect transistors (FETs) 21 2.5 Metal oxide semiconductor field-effect transistor - MOSFET 21 2.6 Summary 26 2.7 References 27 3 Materials and methods 33 3.1 Plasmonic biosensors based on vertically aligned gold nanoantennas 33 3.1.1 Materials 33 3.1.2 Manufacturing of nanoantenna arrays 34 3.1.3 Surface modification and characterization 35 3.1.4 Measurement setup for detection of analytes 38 3.2 SiNW FET-based real-time monitoring of cortisol 40 3.2.1 Materials 40 3.2.2 Manufacturing of silicon nanowire field effect transistors (SiNW FETs) 42 3.2.3 Integration of SiNW FETs into a portable platform 42 3.2.4 Biomodification and characterization of electronic biosensors SiNW FETs 42 3.2.5 Electric characterization of FETs 47 3.3 References 50 4 Plasmonic DNA biosensor based on vertical arrays of gold nanoantennas 51 4.1 Introduction - Optical biosensors operating by means of LSPR 53 4.2 Biosensing with vertically aligned gold nanoantennas 56 4.2.1 Sensor fabrication, characterization, and integration 56 4.2.2 Integration of microfluidics 58 4.2.3 Immobilization of probe DNA and backfilling 58 4.2.4 Hybridization of complementary DNA strands 62 4.2.5 Surface coverage and hybridization efficiency of DNA 69 4.2.6 Refractive index sensing 72 4.2.7 Backfilling and blocking 73 4.3 Summary 75 4.4 References 77 5 Label-free detection of salivary cortisol with SiNW FETs 83 5.1 Introduction 85 5.2 Design, integration, and performance of SiNW FETs into a portable platform 89 5.2.1 Structure and electrical characteristics of honeycomb SiNW FETs 89 5.2.2 Integration of SiNW FET into a portable measuring unit 91 5.2.3 Performance of SiNW FET arrays 93 5.3 Detection of biomolecules with SiNW FETs 102 5.3.1 General considerations for biodetection with FETs 102 5.3.2 Sensing aptamers with FETs 103 5.3.3 Biodetection of the analyte cortisol with SiNW FETs 104 5.3.4 Detection of cortisol with SiNW FETs 112 5.4 Summary 119 5.5 References 121 6 Summary and outlook 131 6.1 Summary 131 6.2 Perspectives – toward multiplexed biosensing applications 134 6.3 References 137 Appendix i A.1 Protocols i A.1.1 Functionalization of gold antennas with thiolated DNA i A.1.2 Functionalization of SiO2 with TESPSA and amino-modified receptors i A.1.3 Functionalization with APTES and carboxyl-modified receptors ii A.1.4 Preparation of microfluidic channels via soft lithography ii A.2 Predicted secondary structures iv A.2.1 Secondary structures of 100base pair target without probe-strands iv A.2.2 Secondary structures of 100base pair target with 25 base pair probe-strand x Versicherung xvii Acknowledgments xix List of publications xxi Peer-reviewed publications xxi Publications in preparation xxi Selected international conferences xxii Curriculum Vitae xxiii

The push for electronic devices on smaller and smaller scales has driven research in the direction of transition metal dichalcogenides (TMD) as new ultra-thin semiconducting materials. These ‘two-dimensional' (2D) materials are typically on the order of a few nanometers in thickness with a minimum all the way down to monolayer. These materials have several layer-dependent properties such as a transition to direct band gap at single-layer. In addition, their lack of dangling bonding and remarkable response to electric fields makes them promising candidates for future electronic devices. For the purposes of this work, two 2D TMDs were studied, MoS2 and MoTe2. This dissertation comprises of three sections, which report on exploration of charge lifetimes, investigation environmental stability at elevated temperatures in air, and establishing feasibility of UV laser annealing for large area processing of 2D TMDs, providing a necessary knowledge needed for practical use of these 2D TMDs in optoelectronic and electronic devices. (1) A study investigating the layer-dependence on the lifetime of photo-generated electrons in exfoliated 2D MoTe2 was performed. The photo-generated lifetimes of excited electrons were found to be strongly surface dependent, implying recombination events are dominated by Shockley-Read-Hall effects (SRH). Given this, the measured lifetime was shown to increase with the thickness of exfoliated MoTe¬2; in agreement with SRH recombination. Lifetimes were also measured with an applied potential bias and demonstrated to exhibit a unique voltage dependence. Shockley-Read-Hall recombination effects, driven by surface states were attributed to this result. The applied electric field was also shown to control the surface recombination velocity, which lead to an unexpected rise and fall of measured lifetimes as the potential bias was increased from 0 to 0.5 volts. (2) An investigation into the environmental stability of exfoliated 2D MoTe2 was conducted using a passivation layer of amorphous boron nitride as a capping layer for back-gated MoTe2 field effect transistor (FET) devices. A systematic approach was taken to understand the effects of heat treatment in air on the performance of FET devices. Atmospheric oxygen was shown to negatively affect uncoated MoTe2 devices while BN-covered FETs showed remarkable chemical and electronic characteristic stability. Uncapped MoTe2 FET devices, which were heated in air for one minute, showed a polarity switch from n- to p-type at 150 °C, while BN-MoTe2 devices switched only after 200 °C of heat treatment. Time-dependent experiments at 100 °C showed that uncapped MoTe2 samples exhibited the polarity switch after 15 min of heat treatment while the BN-capped device maintained its n-type conductivity. X-ray photoelectron spectroscopy (XPS) analysis suggests that oxygen incorporation into MoTe2 was the primary doping mechanism for the polarity switch. (3) The feasibility of UV laser annealing as a post-process technique to sinter 2D crystal structures from sputtered amorphous MoS2 was explored. Highly crystalline materials are sought after for their use in electron and opto-electronic devices. Sputtered MoS2 has the advantage of potential for large area deposition and high scalability, however, it requires high temperatures (>350 °C) for their crystalline growth. Which creates difficulty for devices grown on polymer substrates. Low-temperature and room temperature deposition results in amorphous films which is detrimental for electric devices. A one-step lase annealing procedure was developed to provide amorphous to crystalline conversion of nanometer thin MoS2 films. Samples were annealed using an unfocused laser beam from a KrF (248 nm) excimer source. The power density was found to be 1.04 mJ/mm2. Raman analysis of laser annealed MoS2 was shown to exhibit a significant improvement of the 2D MoS2 crystallinity compared to as-deposited films on both SiO2/Si, as well as polydimethylsiloxane (PDMS) substrates. Annealed samples showed improvement of their conductivity on an order of magnitude. A top-gated FET device was fabricated on flexible PDMS substrates using Al2O3 as a gate oxide. Measured field effect mobility of annealed samples showed significant improvement over as-deposited devices.

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The use of Silicon Carbide Field Effect Transistor (SiC-FET) sensors in cyclic operation is a proven way to quantify different gases. The standard workflow involves extracting shape-defining features such as averages and slopes of the sensor signal. This work’s main goal is to verify if frequency modulation can be used to simultaneously quantify Nitric Oxide (NO), Nitrogen Dioxide (NO2) and Ammonia (NH3). Linear models were chosen, namely: Ordinary Least Squares (OLS), Principal Components Regression (PCR), Partial Least Squares Regression (PLSR) and Ridge regression. Results indicate that these models fail to predict concentrations completely for every gas. Analysis indicates that the features are not linear in terms of concentrations. This work is concluded by recommending a few other alternatives before discarding frequency cycling completely: non-parametric models of regression and different frequency regime, namely the use of triangular waves in future experiments.

Dans les dernières années, beaucoup de travail a été consacré par l’industrie électronique pour réduire la consommation d’énergie des composants micro-électroniques qui représente un fardeau important dans la spécification des nouveaux systèmes.Afin de réduire la consommation d’énergie, nombreuses stratégies peuvent être adoptées au niveau des systèmes micro-électroniques et des simples dispositifs nano-électroniques. Récemmentle Transistor Tunnel `a effet de champ (Tunnel-FET) s’est imposé comme un candidat possible pour remplacer les dispositifs MOSFET conventionnels pour applications de tr`es basse puissance à des tensions d’alimentation VDD < 0.5V. Nous présentons un modèle Multi-Subband Monte Carlo modifié (MSMC) qui a été adapté pour la simulation de TFET Ultra Thin Body Fully Depleted Seminconductor on Insulator (FDSOIUTB) avec homo- et hétéro-jonctions et des matériaux semi-conducteurs arbitraires. Nous prenons en considération la quantification de la charge avec une correction quantique heuristique mais précise, validée via des modèles quantiques complets et des résultats expérimentaux.Le modèle MSMC a été utilisé pour simuler et évaluer la performance de FD-SOI TFET sidéealisées avec homo- et hétéro-jonction en Si, alliages SiGe ou composés InGaAs. Dans la deuxième partie de l’activité de doctorat un travail de caractérisation à basse températurea été réalisé sur les TFETs en Si et SiGe homo- et hétéro-jonction fabriqués par le centre de recherche français du CEA -LETI. L’objectif est d’estimer la présence de l’effet Tunnel comme principal mécanisme d’injection et la contribution d’autres mécanismes d’injection comme le Trap Assisted Tunneling. / In the last years a significant effort has been spent by the microelectronic industry to reducethe chip power consumption of the electronic systems since the latter is becoming a majorlimitation to CMOS technology scaling.Many strategies can be adopted to reduce the power consumption. They range from thesystem to the electron device level. In the last years Tunnel Field Effect Transistors (TFET)have imposed as possible candidate devices for replacing the convential MOSFET in ultra lowpower application at supply voltages VDD < 0.5V. TFET operation is based on a Band-to-BandTunneling (BtBT) mechanism of carrier injection in the channel and they represent a disruptiverevolutionary device concept.This thesis investigates TFET modeling and simulation, a very challenging topic becauseof the difficulties in modeling BtBT accurately. We present a modified Multi Subband MonteCarlo (MSMC) that has been adapted for the simulation of Planar Ultra Thin Body (UTB)Fully Depleted Semiconductor on Insulator (FD-ScOI) homo- and hetero-junction TFET implementedwith arbitrary semiconductor materials. The model accounts for carrier quantizationwith a heuristic but accurate quantum correction validated by means of comparison with fullquantum model and experimental results.The MSMC model has been used to simulate and assess the performance of idealized homoandhetero-junction TFETs implemented in Si, SiGe alloys or InGaAs compounds.In the second part of the thesis we discuss the characterization of TFETs at low temperature.Si and SiGe homo- and hetero-junction TFETs fabricated by CEA-LETI (Grenoble,France) are considered with the objective to identify the possible presence of alternative injectionmechanisms such as Trap Assisted Tunneling. / Negli ultimi anni uno sforzo significativo `e stato speso dall’industria microelettronica per ridurreil consumo di potenza da parte dei sistemi microelettronici. Esso infatti sta diventando unadelle limitazioni pi`u significative per lo scaling geometrico della tecnologia CMOS.Diverse strategie possono essere adottate per ridurre il consumo di potenza considerando ilsistema microelettronico nella sua totalit`a e scendendo fino a giungere all’ottimizzazione delsingolo dispositivo nano-elettronico. Negli ultimi anni il transistore Tunnel FET (TFET) si`e imposto come un possibile candidato per rimpiazzare, in applicazioni a consumo di potenzaestremamente basso con tensioni di alimentazione inferiori a 0.5V, i transistori convenzionaliMOSFET. Il funzionamento del TFET si basa sul meccanismo di iniezione purament quantisticodel Tunneling da banda a banda (BtBT) e che dovrebbe permettere una significativa riduzionedella potenza dissipata. Il BtBT nei dispositivi convenzionali `e un effetto parassita, nel TFETinvece esso `e utilizzato per poter ottenere significativi miglioramenti delle performance sottosogliae pertanto esso rappresenta una nuova concezione di dispositivo molto innovativa erivoluzionaria.Questa tesi analizza la modellizazione e la simulazione del TFET. Questi sono argomenti moltocomplessi vista la difficolt`a che si hanno nel modellare accuratamente il BtBT. In questo lavoroviene presentata una versione modificata del modello di trasporto Multi Subband Monte Carlo(MSMC) adattato per la simulazione di dispositivi TFET planari Ultra Thin Body Fully DepletedSilicon on Insulator (UTB FD-SOI), implementati con un canale composto da un unicosemiconduttore (omogiunzione) o con differenti materiali semiconduttori (eterogiunzione). Ilmodello proposto tiene il conto l’effetto di quantizzazione dovuto al confinamento dei portatoridi carica, con un’euristico ma accurato sistema di correzione. Tale modello `e stato poivalidato tramite una comparazione con altri modelli completamente quantistici e con risultatisperimentali.Superata la fase di validazione il modello MSMC `e utilizzato per simulare e verificare le performancedi dispositivi TFET implementati come omo o eterogiunzione in Silicio, leghe SiGe,o composti semiconduttori InGaAs.Nella seconda parte della tesi viene illustrato un lavoro di caratterizazione di TFET planari abassa temperatura (fino a 77K). Sono stati misurati dispositivi in Si e SiGe a omo o eterogiuzioneprodotti nella camera bianca del centro di ricerca francese CEA-LETI di Grenoble. Tramite talimisure `e stato possibile identificare la probabile presenza di meccanismi di iniezione alternativial BtBT come il Tunneling assistito da trappole (TAT) dimostrando come questo effetto `e,con ogni probabilit`a, la causa delle scarse performance in sottosoglia dei dispositivi TFETsperimentali a temperatura ambiente.

RF switches are an essential building block in numerous applications, including tactical radar systems, satellite communications, global positioning systems (GPS), automotive radars, wireless communications, radio astronomy, radar transceivers, and various instrumentation systems. For many of these applications the circuits have to operate reliably under extreme operating conditions, including conditions outside the domain of commercial military specifications. The objective of this thesis is to present the design procedure, simulation, and measurement results for Radio Frequency (RF) switches in 130 nm Silicon Germanium (SiGe) BiCMOS process technology. The novelty of this work lies in the proposed new topology of an ultrahigh-isolation single-pole, single-throw (SPST) and a single pole, four-throw (SP4T) nMOS based switch for multiband microwave radar systems. The analysis of cryogenic temperature effects on these circuits and devices are discussed in this work. The results shows that several key-figures-of-merits of a switch, like insertion loss, isolation, and power handling capability (P1dB) improve at cryogenic temperatures. These results are important for several applications, including space-based extreme environment application where FET based circuits would need to operate reliably across a wide-range of temperature.