This work examines extended, point, and surface defects in GaN by means of electric force microscopy, photoluminescence and deep-level transient spectroscopy. Modeling of the surface band bending, its origin, and the effects of fabrication processing steps are discussed in the first part of the dissertation. Experimental results indicate that spontaneous polarization does not play a predominant role in GaN band bending. An increase of surface band bending due to annealing and etching was observed, while passivation did not produce changes. However, passivation did reduce reverse-bias leakage current by one to two orders of magnitude in GaN Schottky diodes. The optical properties of GaN were found to be sensitive to fabrication processing steps, most likely due to changes in the total density of surface states.The second part of this dissertation concerns the reduction of extended defects and associated deep levels in layers of GaN grown on different templates. Templates employing a low temperature GaN nucleation layer, epitaxial lateral overgrowth, and SiNx nanonetwork are compared in terms of deep level concentrations in the resulting GaN films. The concentrations of two types of traps, A (Ec-ET ~ 0.54-0.58 eV) and B (Ec-ET ~ 0.20-0.24 eV), were the highest for the sample with a low temperature nucleation layer and lowest for a sample with a 6 min SiNx deposition time. We surmise that the defects responsible for the dominant trap A are located along dislocation lines and form clusters.In the last part we investigate the piezoelectric and ferroelectric properties of PZT in Pb(Zr, Ti)O3(PZT)/GaN structures, and the effects of interface states. Sol-gel derived thin PZT films on GaN and Pt/Ti/SiO2/Si surfaces were studied by piezoresponse force microscopy (PFM), where quantitative characterization of piezoelectric properties of PZT films was performed. Superior piezoelectric properties of PZT/GaN/sapphire structures as compared to PZT/ Pt/Ti/SiO2/Si structures were observed and explained by a different preferred orientation of PZT. Despite the possible existence of a strong depolarization field at the PZT/GaN interface, we confirm with PFM the presence of a remanent polarization in PZT/GaN/sapphire structures.

Doctor of Philosophy / Department of Chemical Engineering / James H. Edgar / The integration of high-κ dielectrics with silicon and III-V semiconductors is important due to the need for high speed and high power electronic devices. The purpose of this research was to find the best conditions for fabricating high-κ dielectrics (oxides) on GaN or Si. In particular high-κ oxides can sustain the high breakdown electric field of GaN and utilize the excellent properties of GaN. This research developed an understanding of how process conditions impact the properties of high-κ dielectric on Si and GaN. Thermal and plasma-assisted atomic layer deposition (ALD) was employed to deposit TiO₂ on Si and Al₂O₃ on polar (c-plane) GaN at optimized temperatures of 200°C and 280°C respectively. The semiconductor surface treatment before ALD and the deposition temperature have a strong impact on the dielectric’s electrical properties, surface morphology, stoichiometry, and impurity concentration. Of several etches considered, cleaning the GaN with a piranha etch produced Al₂O₃/GaN MOS capacitors with the best electrical characteristics. The benefits of growing a native oxide of GaN by dry thermal oxidation before depositing the high-κ dielectric was also investigated; oxidizing at 850°C for 30 minutes resulted in the best dielectric-semiconductor interface quality. Interest in nonpolar (m-plane) GaN (due to its lack of strong polarization field) motivated an investigation into the temperature behavior of Al₂O₃/m-plane GaN MOS capacitors. Nonpolar GaN MOS capacitors exhibited a stable flatband voltage across the measured temperature range and demonstrated temperature-stable operation.

In this thesis, an interface passivation by a lattice matched atomic layer deposition (ALD) epitaxial magnesium calcium oxide (MgCaO) on wide-bandgap gallium nitride (GaN) has been applied for the first time and expensively studied via various characterization methods (including AC conductance methods, pulsed current-voltage, and single pulse charge pumping). Also, beta-Ga2O3 with a monoclinic crystal structure that offers several surface oriented channels has been demonstrated as potential beta-Ga2O3 FET. On the other hand, low frequency noise studies in 2-D MoS2 NC-FETs was reported for the first time. Low frequency noise of the devices is systematically studied depending on various interfacial oxides, different thicknesses of interfacial oxide, and ferroelectric hafnium zirconium oxide. Interestingly enough, the low frequency noise is found to decrease with thicker ferroelectric HZO in the subthreshold regime of the MoS2 NC-FETs, in stark contrast to the conventional high-k transistors. Also, the ferroelectric switching speed is found to be related with the maximum electric field applied during the fast gate voltage sweep, suggesting the internal ferroelectric switching speed can be even faster depending on the device’s electrical bias conditions and promises a high speed performance in our ferroelectric HZO

Ces travaux de thèse portent sur l'évaluation des propriétés de nanofils InGaN/GaN en vue de la réalisation de diodes électroluminescentes (LEDs). Deux types d'architecture, obtenus par des techniques de croissance différentes, ont été étudiés. La technique MBE a conduit à la réalisation de LEDs en structure axiale émettant du domaine spectral bleu au rouge. Les émetteurs uniques présentent dans ce cas des diamètres typiquement inférieurs à 100 nm. La technique MOCVD a conduit quant à elle la fabrication de LEDs émettant des longueurs d'onde plus courtes à partir d'hétérostructures InGaN/GaN en Coeur/Coquille présentant des dimensions micrométriques. Dans les deux cas, la croissance est réalisée de manière spontanée sur un substrat Silicium (111) de conductivité élevée permettant l'injection verticale du courant dans les dispositifs intégrés à l'échelle macroscopique. L'ensemble des briques technologiques nécessaires à la fabrication de LEDs a été évalué par un panel important de techniques expérimentales adaptées aux structures à fort rapport de forme. Ainsi, l'effet de l'incorporation d'espèces dopantes de type n (Silicium) et de type p (Magnésium) a été caractérisé par des expériences de spectroscopie optique couplées à des mesures électriques sur fils uniques. De plus, la cathodoluminescence basse température a été largement utilisée afin d'étudier les propriétés optiques de la zone active à base d'InGaN dans les deux architectures considérées. Après intégration technologique, des caractérisations électro-optiques résolues à l'échelle du fil unique ont montré que les performances des LEDs à nanofils restent principalement limitées par la fluctuation des propriétés électriques et optiques entre émetteurs uniques. / This thesis aims at studying the intrinsic properties of InGaN/GaN nanowires (NWs) in order to fabricate efficient light emitting diodes (LEDs). Two active region designs, obtained through different growth techniques, have been extensively investigated. Axial NW-based LEDs emitting from the blue to the red spectral range have been grown by MBE. In this case, single emitters present diameters typically smaller than 100 nm. MOCVD allowed the fabrication of LEDs emitting shorter wavelengths from Core/Shell heterostructures with typical dimensions in the micrometre range. In both cases, the spontaneous growth has been conducted on Silicon (111) highly conductive substrates in order to inject the current vertically into macroscopically contacted devices. Technological building blocks needed to fabricate LEDs have been investigated using a wide range of characterization techniques adapted for high aspect ratio structures. Thus, n-type (Silicon) and p-type (Magnesium) dopings have been assessed thanks to optical spectroscopy techniques, and these results have been confirmed by electrical measurements carried out on single wires. Furthermore, low temperature cathodoluminescence has been widely used to study the optical properties of InGaN-based active regions. After technological integration, electro-optical characterizations with spatial resolution down to the single wire level have revealed that device performances are mainly limited by the fluctuation of electrical and optical properties between single emitters.

Gallium nitride (GaN)-based light-emitting diodes (LEDs) with cylindrical nanostructures have been the subject of significant research interest in the past decade, due to the potential of such structures to increase light extraction efficiency and deliver highly directional light emission. Nanorod LEDs, where the light emission is within the nanocylinder, have the additional potential to increase internal quantum efficiency and emit in colours previously thought impractical with GaN-based LEDs. Optical modelling of nanostructured LEDs is usually carried out using finite-difference time-domain methods, which are computationally intensive and do not always provide sufficient insight into the physics underlying the simulation results. This thesis proposes an intuitive, quasi-analytic method based on modal expansion. It is found that it is possible to calculate the far field diffraction patterns of all guided modes supported by a single nanorod, with full consideration of Fabry-Perot effects, in minutes using a standard office desktop computer. Focus is placed on the case of a nanorod of radius 140 nm, for which angular photoluminescence measurements were available to provide a means of validating the model. Consideration of the guided modes alone provides a compelling explanation for gross features in the measured data where none previously existed. It is shown that, using a standard equation from a textbook, it is possible to calculate how much each of the guided and radiation modes of a single nanorod is excited by a Hertzian dipole of known position and orientation with respect to the nanorod geometry. When interference between these modes is considered, it is possible to calculate the total far field angular emission pattern due to that dipole. Comparing these patterns with photoluminescence measurements allows one to infer the locations and orientations of dipole current sources; the results are found to be consistent with those of cathodoluminescence studies.

李淑文. / "2001年1月" / 論文 (哲學碩士)--香港中文大學, 2001. / 參考文獻 (leaves 114-121) / 附中英文摘要. / "2001 nian 1 yue" / Li Shuwen. / Lun wen (zhe xue shuo shi)--Xianggang Zhong wen da xue, 2001. / Can kao wen xian (leaves 114-121) / Fu Zhong Ying wen zhai yao. / 撮要 --- p.i / Abstract --- p.ii / 目錄 --- p.iv / Chapter 第一章 --- 導論 / Chapter 一´Ø --- 引言 --- p.1 / Chapter 二´Ø --- 硏究方法 --- p.4 / Chapter 三´Ø --- 六朝志怪的特性 --- p.6 / Chapter 1´Ø --- 志怪小說的內容 / Chapter 2´Ø --- 志怪小說的寫作手法 / Chapter 3´Ø --- 志怪小說的寫作動機 / Chapter 四´Ø --- 選擇《搜神記》的原因 --- p.14 / Chapter 1 ´Ø --- 從文學角度看 / Chapter 2´Ø --- 從內容看 / Chapter 五´Ø --- 本文結構與內容 --- p.16 / Chapter 第二章 --- 《搜神記》的成書與流傳 / Chapter 一´Ø --- 成書 --- p.18 / Chapter 1 ´Ø --- 資料來源 / Chapter 2´Ø --- 寫作目的 / Chapter 二 ´Ø --- 流傳 --- p.22 / Chapter 第三章 --- 《搜神記》中「死而復生故事」內容分析 --- p.30 / Chapter 一´Ø --- 死而復生的原因 --- p.32 / Chapter 1´Ø --- 被司命誤召 / Chapter 2´Ø --- 未當死 / Chapter 二´Ø --- 死而復生的詮釋 --- p.36 / Chapter 1´Ø --- 精誠所至 / Chapter 2´Ø --- 徵兆 / Chapter 三´Ø --- 死後的去處及生活 --- p.41 / Chapter 1´Ø --- 死後往天上及其生活 / Chapter 2´Ø --- 死後往泰山及其生活 / Chapter 第四章 --- 《搜神記》中「鬼故事」內容分析 --- p.47 / Chapter 一´Ø --- 鬼顯現的原因 --- p.50 / Chapter 1´Ø --- 死於非命 / Chapter 2´Ø --- 安葬不宜 / Chapter 3´Ø --- 未嫁而死 / Chapter 二´Ø --- 死後的去處及其生活 --- p.58 / Chapter 1 ´Ø --- 死後的去處 / Chapter 2 ´Ø --- 死後的生活 / Chapter 三´Ø --- 死者與生者的關係 --- p.60 / Chapter 第五章 --- 《搜神記》中死後世界的承傳與轉變 --- p.65 / Chapter 一´Ø --- 死而復生與漢代流行思想 --- p.67 / Chapter 二´Ø --- 《搜神記》中死後世界的承傳與轉變 --- p.74 / Chapter 1 ´Ø --- 死後的去處 / Chapter 2´Ø --- 死後世界的官僚架構組織 / Chapter 3´Ø --- 死後的生活 / Chapter 4´Ø --- 死者與生者的關係 / Chapter 第六章 --- 總結 --- p.109 / 參考書目 --- p.114

Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors. In this thesis, the DC, RF, and thermal characteristics of GaN HEMTs grown on Si-substrates will be investigated through a series of accelerated lifetime experiments. A figure of merit known as the critical voltage is explored and used as the primary means by which the GaN-on-Si devices are electrically strained. The critical voltage is defined as the specific voltage bias by which a sudden change in device performance is experienced due to a deformation of the target GaN HEMT’s epitaxial structure. Literature on the topic details the inevitable formation of pits and cracks localized under the drain-side of the gate contact that promote electrical degradation of the devices via the inverse piezoelectric effect. Characteristic changes in device performance due to high field strain are recorded and physical mechanisms behind observed degraded performance are investigated. The study assesses the performance of roughly 60 GaN-on-Si HEMTs in four experimental settings. The first experiment investigates the critical voltage of the device in the off-state mode of operation and explores device recovery post-stress. The second experiment analyzes alterations in DC and RF performance under varying thermal loads and tracks the dependence of the critical voltage on temperature. The third experiment examines electron trapping within the HEMTs as well as detrapping methodologies. The final experiment links the changes in RF performance induced by high field strain to the small-signal parameters of the HEMT. Findings from the research conclude the existence of process-dependent defects that originate during the growth process and lead to inherent electron traps in unstressed devices. Electron detrapping due to high electric field stress applied to the HEMTs was observed, potentially localized within the AlGaN layer or GaN buffer of the HEMT. The electron detrapping in turn contributed to drain current recovery and increased unilateral performance of the transistor in the RF regime. Thermal experiments resulted in a positive shift in critical voltage, which enhanced gate leakage current at lower gate voltage drives.

Ce travail présente une étude spectroscopique par réflectivité, photoluminescence et transmission (de 5 K à 300 K) pour la mise en évidence du couplage fort lumière-matière dans des microcavités nitrurées massives et à puits quantiques élaborées sur substrat de silicium. Les expériences sont interprétées grâce à une modélisation utilisant le formalisme des matrices de transfert et prenant en compte les phénomènes d'élargissement homogène et inhomogène des transitions excitoniques. A travers les résultats obtenus sur de nombreuses cavités, l'influence de la géométrie de la microcavité (épaisseur de la cavité, nombre de paires des miroirs de Bragg, nature des miroirs, ...) sur l'obtention du régime de couplage fort a été étudiée. En s'appuyant sur les résultats expérimentaux obtenus, le modèle des matrices de transfert a été comparé à un modèle quasi-particule. Il a été démontré que ce dernier n'est réaliste que dans le cas où la réflectivité des miroirs est très élevée, le modèle des matrices de transfert restant le plus fidèle aux résultats expérimentaux grâce à la prise en compte de la structure réelle de la microcavité. Ce travail de thèse s'achève par l'étude de microcavités à deux miroirs diélectriques. Deux approches différentes visant à améliorer le facteur de qualité de la cavité ainsi que la finesse du mode excitonique (à travers l'amélioration de la qualité cristalline de la couche de GaN) sont présentées et le couplage fort est observé pour la première fois en transmission.

A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based synthesis method provides a low cost process to fabricate GaN-based nanomaterials fabrication. / Singapore-MIT Alliance (SMA)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anodizing the aluminum. To minimize plasma-induced damage, the template was exposed to CF4-based plasma conditions. Scanning electron microscopy (SEM) analysis shows that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template. The pore diameter in the AAO film can be easily controlled by tuning the anodization conditions. Atomic force microscopy (AFM), photoluminescence (PL) and micro-Raman techniques were employed to assess the quality of the etched GaN nanopore surface. Such a cost-effective method to produce nano-patterned GaN template would be useful for growth and fabrication of III-Nitrides based nanostructures and photonic band gap materials. / Singapore-MIT Alliance (SMA)