Rapid development in CMOS technology has resulted in its suitability for the implementation of readout front-end systems in terms of high integration density, and low power consumption yet at the same time posing many challenges for analog circuits design like readout front-end. One of the significant challenges is the low noise design for high speed front-end systems, while at the same time minimizing the power consumption as much as possible. A high speed, low noise, low power, and programmable readout front-end system is designed and implemented for an X-ray detector in CMOS 0.18 m technology in this thesis work. The front-end system has a peaking time of 10 ns, which is the highest speed ever reported in the published work. The front-end system is designed to achieve low noise in terms of ENC, and a low power consumption of 2.9 mW. The detector capacitance is the most dominating parameter to low noise, which in turn is directly related to the power consumption. In this thesis work an ENC of 435 electrons is achieved for a detector capacitance of 5 pF and an ENC of 320 electrons for a detector capacitance of 3 pF. Based on the comparison to related published work, a performance improvement of at least two times is achieved taking peaking time, power, ENC, and detector capacitance all into consideration. The output pulse after amplification has peak amplitude of 300 mV for a maximum injected charge of 40000 electrons from the detector. The readout front-end system noise performance is strongly dependent on the input MOSFET type, size, and biasing. In this work a PMOS has been selected and optimized as the input device due to its smaller 1/f noise and high gain as compare to NMOS when biased at same currents. The architecture designed in this work consists of a folded cascode CSA with extra cascode in first stage, a pole-zero cancellation circuit to eliminate undershoot, a shaper amplifier, and integrators using Gm-C filter technique. All of these components are optimized for low power while meeting the noise requirements. The whole front-end system is programmed for peaking times of 10, 20, and 40 ns. The programmability is achieved by switching different capacitors and resistors values for all the poles and zeros in the front-end, and by switching parallel transconductance in the Gm-C filters. Finally fine tuning of all the capacitance, resistance, and transconductance values is done to achieve required performance.

An 80 MHz bandpass filter with a tunable quality factor of 16∼44 using an improved transconductor circuit is presented. A noise optimized biquad structure for high-Q, high- frequency bandpass filter is proposed. The quality factor of the filter is tuned using a new quality factor locked loop algorithm. It was shown that a second-order quality factor locked loop is necessary and sufficient to tune the quality factor of a bandpass filter with zero steady state error. The accuracy, mismatch, and sensitivty analysis of the new tuning scheme was performed and analyzed. Based on the proposed noise optimized filter structure and new quality factor tuning scheme, a biquad filter was designed and fabricated in 0.25 μm BiCMOS process. The measured results show that the biquad filter achieves a SNR of 45 dB at IMD of 40 dB. The P-1dB compression point and IIP3 of the filter are -10 dBm and -2.68 dBm, respectively. The proposed biquad filter and quality factor tuning scheme consumes 58mW and 13 mW of power at 3.3 V supply.

This work analyzes tuning capabilities of different fully integrated active filter topologies. Work only deals with continuous time active filters. Topologies described in this work differ in type of active element and in method of frequency tuning. Techniques of tunning are proved on second order low pass filter. Filter topologies are compared from tunning capabilities and from point of total harmonic distortion. The main building block of all filters is integrator.

This dissertation presents a low-power high-resolution delta-sigma ADC. Two new architectural design techniques are proposed to reduce the power dissipation of the ADC. Compared to the conventional active adder, the direct charge transfer (DCT) adder greatly saves power by keeping the feedback factor of the active adder unity. However, the inherent delay originated from the DCT adder will cause instability to the modulator and complex additional branches are usually needed to stabilize the loop. A simple and power-efficient technique is proposed to absorb the delay from the DCT adder and the instability issue is therefore solved. Another proposed low-power design technique is to feed differentiated inverted quantization noise to the input of the last integrator. The modulator noise-shaping order with this proposed technique is effectively increased from two to three without adding additional active elements. The delta-sigma ADC with the proposed architectural design techniques has been implemented in transistor-level and fabricated in 0.18 µm CMOS technology. Measurement results showed a SNDR of 99.3 dB, a DR of 101.3 dB and a SFDR of 112 dB over 20 kHz signal bandwidth, resulting in a very low figure-of-merit (FoM) in its application category. Finally, two new circuit ideas, low-power parasitic-insensitive switched-capacitor integrator for delta-sigma ADCs and switched-resistor tuning technique for highly linear Gm-C filter design are presented. / Graduation date: 2012 / Access restricted to the OSU Community at author's request from June 9, 2012 - June 9, 2014

Three main analog circuit building blocks that are important for a mixed-signal system are investigated in this work. New building blocks with emphasis on power efficiency and compatibility with deep-submicron technology are proposed and experimental results from prototype integrated circuits are presented. Firstly, a 1.1GHz, 5th order, active-LC, Butterworth wideband equalizer that controls inter-symbol interference and provides anti-alias filtering for the subsequent analog to digital converter is presented. The equalizer design is based on a new series LC resonator biquad whose power efficiency is analytically shown to be better than a conventional Gm-C biquad. A prototype equalizer is fabricated in a standard 0.18μm CMOS technology. It is experimentally verified to achieve an equalization gain programmable over a 0-23dB range, 47dB SNR and -48dB IM3 while consuming 72mW of power. This corresponds to more than 7 times improvement in power efficiency over conventional Gm-C equalizers. Secondly, a load capacitance aware compensation for 3-stage amplifiers is presented. A class-AB 16W headphone driver designed using this scheme in 130nm technology is experimentally shown to handle 1pF to 22nF capacitive load while consuming as low as 1.2mW of quiescent power. It can deliver a maximum RMS power of 20mW to the load with -84.8dB THD and 92dB peak SNR, and it occupies a small area of 0.1mm2. The power consumption is reduced by about 10 times compared to drivers that can support such a wide range of capacitive loads. Thirdly, a novel approach to design of ADC in deep-submicron technology is described. The presented technique enables the usage of time-to-digital converter (TDC) in a delta-sigma modulator in a manner that takes advantage of its high timing precision while noise-shaping the error due to its limited time resolution. A prototype ADC designed based on this deep-submicron technology friendly architecture was fabricated in a 65nm digital CMOS technology. The ADC is experimentally shown to achieve 68dB dynamic range in 20MHz signal bandwidth while consuming 10.5mW of power. It is projected to reduce power and improve speed with technology scaling.