<p>Nonlinear transmission lines (NLTLs) provide a solid state alternative to conventional vacuum based high power microwave (HPM) sources. The three most common NLTL implementations are the lumped element, split ring resonator (SRR), and the nonlinear bulk material based NLTLs. The nonlinear bulk material implementation provides the highest power output of the three configurations, though they are limited to pulse voltages less than 50 kV; higher voltages are possible when an additional insulator is used, typically SF₆ or dielectric oil, between the nonlinear material and the outer conductor. The additional insulator poses a risk of leaking if structural integrity of the outer conductor is compromised. The desire to provide a fieldable NLTL based HPM system makes the possibility of a leak problematic. The work reported here develops a composite based NLTL system that can withstand voltages higher than 50 kV and not pose a risk of catastrophic failure due to a leak while also decreasing the size and weight of the device and increasing the output power.</p> <p>Composites with barium strontium titanate (BST) or nickel zinc ferrite (NZF) spherical inclusions mixed in a silicone matrix were manufactured at volume fractions ranging from 5% to 25%. The dielectric and magnetic parameters were measured from 1-4 GHz using a coaxial airline. The relative permittivity increased from 2.74±0.01 for the polydimethylsiloxane (PDMS) host material to 7.45±0.33 after combining PDMS with a 25% volume fraction of BST inclusions. The relative permittivity of BST and NZF composites was relatively constant across all measured frequencies. The relative permeability of the composites increased from 1.001±0.001 for PDMS to 1.43±0.04 for a 25% NZF composite at 1 GHz. The relative permeability of the 25% NZF composite decreased from 1.43±0.05 at 1 GHz to 1.17±0.01 at 4 GHz. The NZF samples also exhibited low dielectric and magnetic loss tangents from 0.005±0.01 to 0.091±0.015 and 0.037±0.001 to 0.20±0.038, respectively, for all volume fractions, although the dielectric loss tangent did increase with volume fraction. For BST composites, all volume fraction changes of at least 5% yielded statistically significant changes in permittivity; no changes in BST volume fraction yielded statistically significant changes in permeability. For NZF composites, the change in permittivity was statistically significant when the volume fraction varied by more than 5% and the change in permeability was statistically significant for variations in volume fraction greater than 10%. The DC electrical breakdown strength of NZF composites decreased exponentially with increasing volume fraction of NZF, while BST composites exhibited no statistically significant variation with volume fraction. </p> <p>For composites containing both BST and NZF, increasing the volume fraction of either inclusion increased the permittivity with a stronger dependence on BST volume fraction. Increasing NZF volume fraction increased the magnetic permeability, while changing BST volume fraction had no effect on the composite permeability. The DC dielectric breakdown voltage decreased exponentially with increased NZF volume fraction. Adding as little as 5% BST to an NZF composite more than doubled the breakdown threshold compared to a composite containing NZF alone. For example, adding 10% BST to a 15% NZF composite increased the breakdown strength by over 800%. The combination of tunability of permittivity and permeability by managing BST and NZF volume fractions with the increased dielectric breakdown strength by introducing BST make this a promising approach for designing high power nonlinear transmission lines with input pulses of hundreds of kilovolts.</p> <p>Coaxial nonlinear transmission lines are produced using composites with NZF inclusions and BST inclusions and driven by a Blumlein pulse generator with a 10 ns pulse duration and 1.5 ns risetime. Applying a 30 kV pulse using the Blumlein pulse generator resulted in frequencies ranging from 1.1 to 1.3 GHz with an output power over 20 kW from the nonlinear transmission line. The output frequencies increased with increasing volume fraction of BST, but the high power oscillations characteristic of an NLTL did not occur. Simulations using LT Spice demonstrated that an NLTL driven with a Blumlein modulator did not induce high power oscillations while driving the same NLTL with a pulse forming network did. </p> <p>Finally, a composite-based NLTL could be driven directly by a high voltage power supply without a power modulator to produce oscillations both during and after the formed pulse upon reaching a critical threshold. The output frequency of the NLTLs is 1 GHz after the pulse and ranged from 950 MHz to 2.2 GHz during the pulse. These results demonstrate that the NLTL may be used as both a pulse forming line and high power microwave source, providing a novel way to reduce device size and weight, while the use of composites could provide additional flexibility in pulse output tuning. </p>

The trend of electrification in transportation applications has led to the fast development of high-power-density power electronics converters. High-switching-frequency and high-temperature operations are the two key factors towards this target. Both requirements, however, are challenging the fundamental limit of silicon (Si) based devices. The emerging wide-bandgap, silicon carbide (SiC) power devices have become the promising solution to meet these requirements. With these advanced devices, the technology barrier has now moved to the compatible integration technology that can make the best of device capabilities in high-power-density converters. Many challenges are present, and some of the most important issues are explored in this dissertation. First of all, the high-temperature performances of the commercial SiC MOSFET are evaluated extensively up to 200 degree C. The static and switching characterizations show that the device has superior electrical performances under elevated temperatures. Meanwhile, the gate oxide stability of the device - a known issue to SiC MOSFETs in general - is also evaluated through both high-temperature gate biasing and gate switching tests. Device degradations are observed from these tests, and a design trade-off between the performance and reliability of the SiC MOSFET is concluded. To understand the interactions between devices and circuit parasitics, an experimental parametric study is performed to investigate the influences of stray inductances on the MOSFETs switching waveforms. A small-signal model is then developed to explain the parasitic ringing in the frequency domain. From this angle, the ringing mechanism can be understood more easily and deeply. With the use of this model, the effects of DC decoupling capacitors in suppressing the ringing can be further explained in a more straightforward way than the traditional time-domain analysis. A rule of thumb regarding the capacitance selection is also derived. A Power Electronics Building Block (PEBB) module is then developed with discrete SiC MOSFETs. Integrating the power stage together with the peripheral functions such as gate drive and protection, the PEBB concept allows the converter to be built quickly and reliably by simply connecting several PEBB modules. The high-speed gate drive and power stage layout designs are presented to enable fast and safe switching of the SiC MOSFET. Based on the PEBB platform, the state-of-the-art Si and SiC power MOSFETs are also compared in the device characteristics, temperature influences, and loss distributions in a high-frequency converter, so that special design considerations can be concluded for the SiC MOSFET. Towards high-temperature, high-frequency and high-power operations, integrated wire-bond phase-leg modules are also developed with SiC MOSFET bare dice. High-temperature packaging materials are carefully selected based on an extensive literature survey. The design considerations of improved substrate layout, laminated bus bars, and embedded decoupling capacitors are all discussed in detail, and are verified through a modeling and simulation approach in the design stage. The 200 degree C, 100 kHz continuous operation is demonstrated on the fabricated module. Through the comparison with a commercial SiC phase-leg module designed in the traditional way, it is also shown that the design considerations proposed in this work allow the SiC devices in the wire-bond structure to be switched twice as fast with only one-third of the parasitic ringing. To further push the performance of SiC power modules, a novel hybrid packaging technology is developed which combines the small parasitics and footprint of a planar module with the easy fabrication of a wire-bond module. The original concept is demonstrated on a high-temperature rectifier module with SiC JFET. A modified structure is then proposed to further improve design flexibility and simplify module fabrication. The SiC MOSFET phase-leg module built in this structure successfully reaches the switching speed limit of the device almost without any parasitic ringing. Finally, a new switching loop snubber circuit is proposed to damp the parasitic ringing through magnetic coupling without affecting either conduction or switching losses of the device. The concept is analyzed theoretically and verified experimentally. The initial integration of such a circuit into the power module is presented, and possible improvements are proposed. / Ph. D.

Le but de cette thèse est de concevoirun chargeur de véhicule électrique avec une fortedensité de puissance car il doit être embarqué dansle véhicule. La thèse se focalise sur le deuxièmeétage du chargeur qui comporte un transformateur.Cet élément représente une part importante du volumetotal du convertisseur.Pour réaliser cela, une nouvelle technologie de transistorsest utilisée : les transistors GaN. Ces composantsinduisent des pertes par commutation plusfaibles que les transistors classiquement utilisés cequi permet d’augmenter la fréquence de découpage.Cette fréquence est un levier pour améliorer la densitéde puissance des convertisseurs. Cependant lafréquence est également responsable de pertes dansd’autres composants comme le transformateur et lesinductances. Pour augmenter efficacement cette densité, la topologie du convertisseur doit être conçuepour réduire les contraintes sur ces composants.La thèse comporte trois parties. Tout d’abord, lecomportement des transistors GaN est évalué etdifférentes topologies sont analysées pour en déduireune structure de chargeur qui minimise les pertesdans le transformateur. Ensuite, un dimensionnementcompact de transformateur est réalisé à l’aide d’uneétude paramétrique et des simulations par élémentsfinis. Enfin, un prototype de ce deuxième étage duchargeur est réalisé et testé pour évaluer ses performanceset son volume / Improvement of power density is a bigchallenge for embedded electric vehicle chargers.Goal of the study is to reduce the volume of the DCDCcharger which contains a bulky transformer. Thekey point is to use wide band gap transistors (GaN) toincrease the charger switching frequency. High switchingfrequency can improve power density but theinconvenient is the increase of switching and transformerlosses. The PhD dissertation is organized inthree steps. First step is the definition of a charger topology.This topology is optimized to reduce transformerlosses. Second part of the study is the theoreticaldesign of a high power density transformer. A completetransformer parametric model is presented withFinite Element Analysis. Third part present the prototypeand test results of the charger DC-DC. Electricalbehavior, volume and efficiency results are discussedin this part.Universit ´

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第21732号 / 工博第4549号 / 新制||工||1709(附属図書館) / 京都大学大学院工学研究科電気工学専攻 / (主査)教授 大村 善治, 教授 松尾 哲司, 教授 竹内 繁樹 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

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The objective of this research work is to investigate, design and measurement of a digital predistortion linearizer that is able to compensate the dynamic nonlinear distortion of a High Power Amplifier (PA). The effectiveness of the proposed baseband predistorter (PD) on the performance of a WLAN OFDM transmitter utilizing a nonlinear PA with memory effect is observed and discussed. For this purpose, a 10W Class-A/B power amplifier with a gain of 22 dB, operated over the 3.5 GHz frequency band was designed and implemented. The proposed baseband PD is independent of the operating RF frequency and can be used in multiband applications. Its operation is based on the Hammerstein system, taking into account PA memory effect compensation, and demonstrates a noticeable improvement compared to memoryless predistorters. Different types of modelling procedures and linearizers were introduced and investigated, in which accurate behavioural models of Radio Frequency (RF) PAs exhibiting linear and nonlinear memory effects were presented and considered, based on the Wiener approach employing a linear parametric estimation technique. Three new linear methods of parameter estimation were investigated, with the aim of reducing the complexity of the required filtering process in linear memory compensation. Moreover, an improved wiener model is represented to include the nonlinear memory effect in the system. The validity of the PA modelling approaches and predistortion techniques for compensation of nonlinearities of a PA were verified by several tests and measurements. The approaches presented, based on the Wiener system, have the capacity to deal with the existing trade-off between accuracy and convergence speed compared to more computationally complex behavioural modelling algorithms considering memory effects, such as those based on Volterra series and Neural Networks. In addition, nonlinear and linear crosstalks introduced by the power amplifier nonlinear behaviour and antennas mutual coupling due to the compact size of a MIMO OFDM transmitter have been investigated.

This thesis focuses on improving the performance of the THz time-domain spectroscopy system using second-order nonlinear crystals for THz generation and detection in terms of bandwidth, sensitivity, and THz field strength. The theories for the THz generation based on optical rectification and detection technique, electro-optical sampling, based on Pockels effect are introduced in Chapter 2. In Chapter 3, some experiments are presented to characterize the performances of the THz system based on a 180 fs Yb:KGW femtosecond laser amplifier operating at 1035 nm. The Yb-based femtosecond laser is becoming increasingly popular due to its robustness, high repetition rate, and high average power. However, the NIR bandwidth of these femtosecond lasers is limited by the gain bandwidth of the gain medium, and achieving pulse durations shorter than 180 fs is challenging. Consequently, the full bandwidth of THz time-domain spectroscopy systems is constrained by such laser systems. In order to broaden the THz bandwidth of such THz time-domain spectroscopy systems, our work in Chapter 4 combines the Yb:KGW femtosecond laser amplifier with an argon-filled hollow-core photonic crystal fiber pulse shaper to spectrally broaden the near-infrared pulses from 3.5 to 8.7 THz, increasing the measured THz bandwidth correspondingly from 2.3 THz to 4.5 THz. This is one of the first works to have broadband THz system based on Yb-based femtosecond lasers in the year of 2018. In Chapter 5, the tilted-pulse-front phase matching in the THz generation and detection scheme is demonstrated using the same surface-etched phase gratings on the front surfaces of the 2 mm-thick GaP generation and detection crystals. This scheme overcomes the THz generation and detection bandwidth limit of thick crystals imposed by the traditional collinear phase matching, while allowing the long nonlinear interaction length. This results in a THz spectral range from 0.1 to 6.5 THz with a peak at 3 THz and a peak dynamic range of 90 dB. In the range between 1.1 and 4.3 THz, the system dynamic range exceeds 80 dB. Based on this contact grating-based THz generation, the next step involves generating high-field THz above 2 THz. For high-field THz generation, the most renowned technique is the tilted-pulse-front technique, which generates high-field THz below 2 THz in a LiNbO₃ crystal. Most nonlinear optics experiments in the THz regime rely on such THz sources. To generate high-field THz above 2 THz, one promising candidate is organic THz crystals. However, most organic crystals require a pump laser with a wavelength exceeding 1200 nm, necessitating a more complex laser system. Additionally, the low damage threshold of these crystals are susceptible to compromise the stability of the measurements. Other techniques, such as air plasma and metallic spintronics, can generate ultra-broadband high-field THz from 0.1 to 30 THz, but the pulse energy within certain frequency windows is relatively low, rendering these THz sources less effective for nonlinearly driving specific optical transitions. On the other hand, semiconductor crystals as THz generation crystals, have a high damage threshold and can achieve good phase matching at wavelength around 800 or 1000 nm. In Chapter 6, high-field THz generation with a peak field of 303 kV/cm and a spectral peak at 2.6 THz is achieved with a more homogenous grating on the surface of a 1 mm-thick GaP generation crystal in a configuration collimating the near-infrared generation beam with a pulse energy of 0.57 mJ onto the generation crystal. The experiments also show that the system operates significantly below the GaP damage threshold and THz generation saturation regime, indicating that the peak THz field strength can approach 1 MV/cm, with a 5 mJ near-infrared generation pulse. This is the first high-field THz source based on semiconductor crystals capable of generating high-field THz above 2 THz. With such a THz source, we can conduct nonlinear optics experiments above 2 THz, including the study of phonon-assisted nonlinearities, coherent control of Bose-Einstein condensation of excitons and polaritons in semiconductor cavities, and saturable absorption in molecular gases.

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