In all energy systems, the parameters necessary to calculate power are the same in functionality: an effort or force needed to create a movement in an object and a flow or rate at which the object moves. Therefore, the power equation can generalized as a function of these two parameters: effort and flow, P = effort * flow. Analyzing various power transfer media this is true for at least three regimes: electrical, mechanical and hydraulic but not for magnetic. This implies that the conventional magnetic system model (the reluctance model) requires modifications in order to be consistent with other energy system models. Even further, performing a comprehensive comparison among the systems, each system's model includes an effort quantity, a flow quantity and three passive elements used to establish the amount of energy that is stored or dissipated as heat. After evaluating each one of them, it was clear that the conventional magnetic model did not follow the same pattern: the reluctance, as analogous to the electric resistance, should be a dissipative element instead it is an energy storage element. Furthermore, the two other elements are not defined. This difference has initiated a reevaluation of the conventional magnetic model. In this dissertation the fundamentals on electromagnetism and magnetic materials that supports the modifications proposed to the magnetic model are presented. Conceptual tests to a case study system were performed in order to figure out the network configuration that better represents its real behavior. Furthermore, analytical and numerical techniques were developed in MATLAB and Simulink in order to validate our model. Finally, the feasibility of a novel concept denominated magnetic transmission line was developed. This concept was introduced as an alternative to transmit power. In this case, the media of transport was a magnetic material. The richness of the power-invariant magnetic model and its similarities with the electric model enlighten us to apply concepts and calculation techniques new to the magnetic regime but common to the electric one, such as, net power, power factor, and efficiency, in order to evaluate the power transmission capabilities of a magnetic system. The fundamental contribution of this research is that it presents an alternative to model magnetic systems using a simpler, more physical approach. As the model is standard to other systems' models it allows the engineer or researcher to perform analogies among systems in order to gather insights and a clearer understanding of magnetic systems which up to now has been very complex and theoretical.

The City of Cape Town is the most congested city in South Africa, with Johannesburg coming in second. Capetonians are spending 75% more time in traffic because of the congestion during peak hours, thus reducing time spent on leisure and other activities. Due to population growth, increasing car ownership and declining capacity of rail infrastructure, Cape Town's road infrastructure will continue to be under severe pressure if the status quo is maintained. Research shows that congestion levels in urban areas are key factors in determining the effectiveness and productivity of the transport system. Traffic congestion poses a threat to the economy and the environment. Increasing corridors' capacity by increasing the number of lanes does not necessarily solve the problem. Effective urban traffic management and efficient utilization of existing infrastructure are critical in creating sustainable solutions to congestion problems. To achieve this, it is important that appropriate urban-scale models and monitoring strategies are put in place. Effective traffic management and monitoring strategies require accurate characterization of the traffic state of an urban-scale network. Several approaches, including kinetic wave theory and cell transmission models or macroscopic traffic simulation models, have been proposed and developed to describe the traffic state of an urban-scale network. However, these approaches are limited and require significant amounts of computational time and effort. The application of macroscopic fundamental diagram (herein referred to as MFD) to characterize the state of an urban-scale network has thus far proven to be more effective than other approaches. MFD represents the state of urban traffic by defining the traffic throughput of an area at given traffic densities. It describes the characteristics and dynamics of urban-scale traffic conditions, allowing for improved and sustainable urban scale traffic management and monitoring strategies. Against this backdrop, the existence of MFD for the City of Cape Town (CoCT) urbanscale network is yet to be established and the implications yet to be understood, as in other parts of the world. The main aim of this research was, therefore, to empirically estimate the macroscopic fundamental diagram for the CoCT's freeway network and analyse its observed features. To achieve this, observed data of 5 minutes periods for the month of May 2019 was used to estimate the MFD. The results confirmed that when the chaotic scatter-plots of flow and density from individual fixed loop detectors were aggregated the scatter nearly disappeared and points grouped neatly to form a clearly defined free-flow state, critical state and the formation of hysteresis loops past the critical density corresponding with the network observed maximum flow. Further analysis of the MFDs showed that a single hysteresis loop always forms past the critical density during the evening peak in a weekday MFD. However, it was inconclusive during the morning peak period in weekday MFDs. Lastly, an explicit hysteresis loop seldom appears in a Saturday MFD when the peak of traffic demand is lower than on weekdays. In order to understand the dynamics of the congestion spread, the freeway network was partitioned into penetrating highways network and the ring highway network. The results showed that the maximum flows observed for the two sub-networks were significantly different (943 veh/hr/lane for the penetrating highways network and 1539 veh/hr/lane for the ring highway network). The penetrating highways network's MFD indicated the presence of congestion in the network whereas the ring highway network indicated only the free-flow state (no indication of congestion) during peak periods. The congestion seen on the penetrating highways network was found not to be sufficiently spread on those highways. On the 24th May, congestion on the penetrating highway network was observed during both the morning and evening peak periods, whereas on the 31st May congestion was observed mainly during the evening peak period, with hysteresis-like shape. These observations confirmed that congestion during peak periods is not homogenously spread across the entire network, certain areas are more congested than others, hence the observed formation of hysteresis loops and slight scatters. Lastly, the hysteresis loops observed in the penetrating highways network's MFD was further characterized in terms of their shape and size. First, the results showed that the slight scatter and hysteresis patterns observed in penetrating highways network MFD's vary in size and shape across different days. The shapes of the hysteresis loops observed during both the morning and evening peak periods, were type H2 hysteresis loops, signifying a stable recovery of the network with the average network flow remaining unchanged as average network density decreases during the recovery. Characterization of the size of the observed hysteresis loops showed that the drop of the hysteresis (an indicator of network level of instability during recovery phase) was smaller, signifying a more stable network traffic and homogenous distribution of congestion during the recovery phase.

In these diploma thesis magnetically ordered materials are studied with the prospect of their application in spintronics. Specifically, we investigated metallic alloy FeRh, which undergoes a magnetic phase transition from antife- romagnetic phase to feromagnetic one around 100◦ C. This phenomenon can be readily used in memory devices. Laser spectroscopy is used as a nondestructive method without need of any electrical contacts. Magnetic properties of FeRh are studied by magnetooptical effects including quadratic magnetic linear dichroism. The measured polarization rotations are of the order of miliradians, therefore, the detection is realized by an optical bridge. At first, we concentrated on discrimina- ting of various magnetooptical effects from each other. The second part is focused on the phase transition induced by different means. Firstly, by heating the whole sample, secondly by illuminating the sample locally by continuous laser.

Oxides form a class of material which covers almost all the spectra of functionalities : dielectricity, semiconductivity, metallicity superconductivity, non-linear optics, acoustics, piezoelectricity, ferroelectricity, ferromagnetism...In this thesis, crystalline oxides have beenintegrated on the workhorse of the semiconductor industry, the silicon, by Molecular Beam Epitaxy (MBE).The first great interest of the epitaxial growth of crystalline oxides on silicon consists in the application of "high-k" dielectric for future sub-22nm CMOS technology. Gadoliniumoxide was explored in detail as a promising candidate of the alternative of SiO2. The pseudomorphic epitaxial growth of Gd2O3 on Si (111) was realized by identifying the optimal growth conditions. The Gd2O3 films show good dielectric properties and particularly an EOTof 0.73nm with a leakage current consistent with the requirements of ITRS for the sub-22nmnodes. In addition, the dielectric behavior of Gd2O3 thin films was further improved by performing PDA treatments. The second research interest on crystalline oxide/Si platform results from its potential application for the "More than Moore" and "Heterogeneous integration" technologies. TheSrTiO3/Si (001) was intensively studied as a paradigm of the integration of oxides on semiconductors. The crystallinity, interface and surface qualities and relaxation process of the STO films on silicon grown at the optimal conditions were investigated and analyzed. Several optimized growth processes were carried out and compared. Finally a "substrate-like" STO thin film was obtained on the silicon substrate with good crystallinity and atomic flat surface. Based on the Gd2O3/Si and SrTiO3/Si templates, diverse functionalities were integrated on the silicon substrate, such as ferro-(piezo-)electricity (BaTiO3, PZT and PMN-PT),ferromagnetism (LSMO) and optoelectronics (Ge). These functional materials epitaxially grown on Si can be widely used for storage memories, lasers and solar cells, etc.

This thesis reports the inspection and manipulation of thin ferroelectric films of lead titanate (PbTiO3 : PTO), lead zirconium titanate (Pb(Zr0.25Ti0.75)O3 : PZT), and barium titanate (BaTiO3 : BTO) by means of scanning force microscopy - specifically Piezoresponse and Kelvin-Probe. The film thickness of the investigated samples ranged between 50nm and 800nm. This experimental work focussed on the following issues: native domain structures, creation of domains by short voltage pulses and area-switching with the force microscope, local qualitative and quantitative measurements of the ferroelectric hysteresis loops, and investigations at the interface between film and platinum-electrode in the PZT/Pt-System. Lamellar domain structures were visualized with high lateral resolution of 5nm on the surface of the PTO-samples, whereas the PZT- and BTO-samples showed prepolarisation and no domains. In the switching experiments a pronounced thickness dependence was found and partly a good agreement to macroscopic measurements. For BTO-films of 50nm and 125nm thickness no stable switching of polarisation could be observed. Using appropriate preparation methods it was possible to provide evidence of a 200nm thick interface layer with reduced polarisation above the electrode in the PZT/Pt-system. / Gegenstand dieser Arbeit ist die Untersuchung dünner ferroelektrischer Schichten von Bleititanat (PbTiO3 : PTO), Bleizirkoniumtitanat (Pb(Zr0.25Ti0.75)O3 : PZT) und Bariumtitanat (BaTiO3 : BTO) und deren Manipulation auf der sub-µm-Skalamittels Rasterkraftmikroskopie. Die Dicke der Schichten lag im Bereich von 50nm bis 800nm. Zum Einsatz kamen die Meßmodi Piezoresponse und Kelvin-Sonde. Die experimentelle Arbeit erstreckte sich über die Abbildung von Domänenstrukturen, die Erzeugung von Domänen durch kurze Spannungspulse und flächiges Umschalten mit dem Kraftmikroskop, lokale qualitative und quantitative Messungen der ferroelektrischen Hysterese, sowie Untersuchungen an der Grenzschicht zwischen Film und Platin-Elektrode am PZT/Pt-System. Lamellenartige Domänenstrukturen konnten mit hoher lateraler Auflösung von 5nm auf der Oberfläche von PTO abgebildet werden. Die PZT- und BTO-Proben waren vorpolarisiert und es ließen sich keine Domänen nachweisen. Bei den Schaltversuchen wurde eine ausgeprägte Schichtdickenabhängigkeit der Koerzitivfeldstärken und teilweise gute Übereinstimmung mit makroskopischen Messungen gefunden. Für dünne BTO-Schichten von 50nm und 125nm Dicke konnte kein stabiles Umschalten der Polarisation gezeigt werden. Mittels geeigneter Präparation der PZT/Pt-Grenzschicht konnte durch direkte Messung eine Schicht von 200nm Dicke mit verminderter Polarisation oberhalb der Elektrode nachgewiesen werden.

Le travail de thèse est consacré à l'étude numérique de nanoparticules (NPs) magnétiques core@shell Fe3O4@CoO présentant des propriétés d'échange bias (EB) en utilisant la méthode Monte Carlo (MC). En particulier, nous nous sommes concentrés sur l'étude de l'effet des réponses collectives (interactions inter-particules telles que les interactions dipolaires (ID)) sur les propriétés magnétiques de ces structures. Des résultats expérimentaux préliminaires, montrant l'existence d'une relation entre le décalage du cycle d'hystérésis et l'interaction entre NPs, ont motivé le travail numérique mené dans le cadre de cette thèse.La première partie de ce mémoire est une étude méthodologique visant à trouver les conditions optimales pour simuler les cycles d'hystérésis d'une façon correcte par MC.Les résultats révèlent une dépendance linéaire entre le champ coercitif Hc et la constante d'anisotropie effective pour des conditions non biaisées (algorithme libre, algorithme du cône, algorithme mixte). La deuxième partie est consacrée à l'étude, à l'échelle atomique, des nanostructures présentant l'EB dont nous avons reproduit les deux caractéristiques (un décalage du cycle d'hystérésis, une augmentation importante de Hc).Nous avons également proposé une méthode permettant l'évaluation de la valeur de l'anisotropie effective.En passant à l'échelle d'une assemblée de NPs, plusieurs modèles furent étudiés. Nous arrivons à interpréter les résultats expérimentaux selon le degré d'agrégation des NPs. Nous montrons que l'agrégation (interactions d'échanges entre les NPs) a un effet direct sur le champ d'échange bias, mais le rôle d'ID sur le champ d'échange mérite des études complémentaires. / This thesis is dedicated to the numerical study by means of Monte Carlo (MC) simulations of core@shell Fe3O4@CoO magnetic nanoparticles (NPs) presenting exchange bias properties (EB). In particular, we focused our study on the effect of collective responses (inter-particle interactions as dipolar interactions (DI)) on the magnetic properties of these structures. Our numerical work is motivated by some preliminary experimental results showing the existence of a relationship between the hysteresis loop shift (exchange bias field) and the interaction between NPs. The first part of this thesis is a methodological study to figure out the optimal conditions to simulate hysteresis loops correctly by MC. The results reveal that the coercive field Hc is linearly related to the effective anisotropy constant for non-biased conditions (free algorithm, cone algorithm, mixed algorithm). The second part is dedicated to the study of exchange-biased nanostructures at the atomic scale. We have been able to reproduce both characteristics of EB (hysteresis loop shift, significant increase in Hc). A method allowing the evaluation of the effective anisotropy has been proposed. Considering an assembly of nanoparticles, several models are studied. The experimental results are interpreted according to the degree of aggregation of NPs. It was shown that the aggregation (exchange interactions between NPs) has a direct effect on the exchange bias field, but the role of the ID on the exchange field requires complimentary calculations to be clarified.

This thesis reports the inspection and manipulation of thin ferroelectric films of lead titanate (PbTiO3 : PTO), lead zirconium titanate (Pb(Zr0.25Ti0.75)O3 : PZT), and barium titanate (BaTiO3 : BTO) by means of scanning force microscopy - specifically Piezoresponse and Kelvin-Probe. The film thickness of the investigated samples ranged between 50nm and 800nm. This experimental work focussed on the following issues: native domain structures, creation of domains by short voltage pulses and area-switching with the force microscope, local qualitative and quantitative measurements of the ferroelectric hysteresis loops, and investigations at the interface between film and platinum-electrode in the PZT/Pt-System. Lamellar domain structures were visualized with high lateral resolution of 5nm on the surface of the PTO-samples, whereas the PZT- and BTO-samples showed prepolarisation and no domains. In the switching experiments a pronounced thickness dependence was found and partly a good agreement to macroscopic measurements. For BTO-films of 50nm and 125nm thickness no stable switching of polarisation could be observed. Using appropriate preparation methods it was possible to provide evidence of a 200nm thick interface layer with reduced polarisation above the electrode in the PZT/Pt-system. / Gegenstand dieser Arbeit ist die Untersuchung dünner ferroelektrischer Schichten von Bleititanat (PbTiO3 : PTO), Bleizirkoniumtitanat (Pb(Zr0.25Ti0.75)O3 : PZT) und Bariumtitanat (BaTiO3 : BTO) und deren Manipulation auf der sub-µm-Skalamittels Rasterkraftmikroskopie. Die Dicke der Schichten lag im Bereich von 50nm bis 800nm. Zum Einsatz kamen die Meßmodi Piezoresponse und Kelvin-Sonde. Die experimentelle Arbeit erstreckte sich über die Abbildung von Domänenstrukturen, die Erzeugung von Domänen durch kurze Spannungspulse und flächiges Umschalten mit dem Kraftmikroskop, lokale qualitative und quantitative Messungen der ferroelektrischen Hysterese, sowie Untersuchungen an der Grenzschicht zwischen Film und Platin-Elektrode am PZT/Pt-System. Lamellenartige Domänenstrukturen konnten mit hoher lateraler Auflösung von 5nm auf der Oberfläche von PTO abgebildet werden. Die PZT- und BTO-Proben waren vorpolarisiert und es ließen sich keine Domänen nachweisen. Bei den Schaltversuchen wurde eine ausgeprägte Schichtdickenabhängigkeit der Koerzitivfeldstärken und teilweise gute Übereinstimmung mit makroskopischen Messungen gefunden. Für dünne BTO-Schichten von 50nm und 125nm Dicke konnte kein stabiles Umschalten der Polarisation gezeigt werden. Mittels geeigneter Präparation der PZT/Pt-Grenzschicht konnte durch direkte Messung eine Schicht von 200nm Dicke mit verminderter Polarisation oberhalb der Elektrode nachgewiesen werden.

Les oxydes forment une classe de matériaux qui couvrent un vaste spectre de fonctionnalités: diélectricité, semiconductivité, métallicité, supraconductivité, optique non linéaire, acoustique, piézoélectricité, ferroélectricité, ferromagnétisme… Dans cette thèse nous avons réalisé l’intégration d’oxydes sous forme de couches minces cristallines sur silicium, en utilisant l’épitaxie par jets moléculaires (EJM).Le premier objectif de la croissance d’oxydes cristallins sur silicium est de réaliser des isolateurs de grille à forte constante diélectrique pour les technologies CMOS avancées« sub-22nm ». L’utilisation de l’oxyde de gadolinium (Gd2O3) a été explorée en détail comme un candidat très prometteur pour remplacer l’oxyde de grille traditionnelle qu’est la silice(SiO2). La croissance épitaxiale de Gd2O3 sur le substrat Si (111) a été réalisée en identifiant les conditions de croissance optimale pour obtenir de bonnes propriétés diélectriques avec notamment l’obtention d’une valeur d’EOT de 0,73nm et des courants de fuite compatibles avec les spécifications de l’ITRS pour les noeuds « sub-22nm ». En outre, les propriétés diélectriques de Gd2O3 ont pu être améliorées en effectuant des recuits post-dépôts. L’autre intérêt d’avoir un empilement d’oxydes cristallins sur silicium repose sur leurs applications potentielles dans les technologies « Plus que Moore » ainsi que pour l’« Intégrations hétérogènes». Le système SrTiO3/Si (001) a été étudié comme un système modèle de l'intégration des oxydes sur semi-conducteur. La cristallinité, la qualité de l’interface oxyde-semiconducteur, l’état de surface et le processus de relaxation de STO déposé sur silicium ont été examinés et analysés, permettant de déterminer des conditions de croissance optimales. Plusieurs processus de croissance ont été réalisés et comparées. Finalement, une couche mince de STO de même qualité qu’un substrat massif a pu être obtenue sur silicium avec une bonne cristallinité et une surface atomiquement lisse. A partir des empilements de Gd2O3/Si et SrTiO3/Si, il a été possible d’intégrer sur silicium des oxydes possédant des fonctionnalités variées comme la ferro-(piézo-)électricité(BaTiO3, PZT et PMN-PT), le ferromagnétisme (LSMO) et l’optoélectronique (Ge). Ces couches minces fonctionnelles sur Si peuvent être alors largement utilisées pour des applications de stockage mémoire, les lasers et les cellules solaires, etc. / Oxides form a class of material which covers almost all the spectra of functionalities : dielectricity, semiconductivity, metallicity superconductivity, non-linear optics, acoustics, piezoelectricity, ferroelectricity, ferromagnetism…In this thesis, crystalline oxides have beenintegrated on the workhorse of the semiconductor industry, the silicon, by Molecular Beam Epitaxy (MBE).The first great interest of the epitaxial growth of crystalline oxides on silicon consists in the application of “high-k” dielectric for future sub-22nm CMOS technology. Gadoliniumoxide was explored in detail as a promising candidate of the alternative of SiO2. The pseudomorphic epitaxial growth of Gd2O3 on Si (111) was realized by identifying the optimal growth conditions. The Gd2O3 films show good dielectric properties and particularly an EOTof 0.73nm with a leakage current consistent with the requirements of ITRS for the sub-22nmnodes. In addition, the dielectric behavior of Gd2O3 thin films was further improved by performing PDA treatments. The second research interest on crystalline oxide/Si platform results from its potential application for the “More than Moore” and “Heterogeneous integration” technologies. TheSrTiO3/Si (001) was intensively studied as a paradigm of the integration of oxides on semiconductors. The crystallinity, interface and surface qualities and relaxation process of the STO films on silicon grown at the optimal conditions were investigated and analyzed. Several optimized growth processes were carried out and compared. Finally a “substrate-like” STO thin film was obtained on the silicon substrate with good crystallinity and atomic flat surface. Based on the Gd2O3/Si and SrTiO3/Si templates, diverse functionalities were integrated on the silicon substrate, such as ferro-(piezo-)electricity (BaTiO3, PZT and PMN-PT),ferromagnetism (LSMO) and optoelectronics (Ge). These functional materials epitaxially grown on Si can be widely used for storage memories, lasers and solar cells, etc.

Les systèmes de récupération d'énergie sont prometteurs pour l'auto-alimentation des dispositifs intégrés. Les matériaux pyroélectriques couplant un changement de température à un changement de polarisation électrique peuvent être utilisés pour la conversion de l'énergie thermique en énergie électrique sans nécessité de maintien de gradients thermiques qui constitue un inconvénient majeur dans les modules thermoélectriques compacts. Dans cette thèse, le PbZro.52Tio.48O3 (PZT) et le BaxSr1-xTiUO3 (x = l et x = 0.7) à fort coefficients pyroélectriques, sont choisis, élaborés en couches minces épitaxiées, caractérisés pour étudier leur potentiel de récupération d'énergie thermique. Ce travail comporte deux aspects : le premier consiste au développement et l'optimisation des conditions de croissance des hétérostructures intégrées et épitaxiées sur silicium. Le deuxième est focalisé sur l'étude des propriétés fonctionnelles (ferroélectriques, diélectriques et pyroélectriques) et à l' estimation du pouvoir de récupération d'énergie principalement des couches de PZT. Une corrélation entre ces deux aspects est ainsi présente. Un changement de la structure cristalline est montré sur les empilements intégrés sur Si, en comparaison avec des structures équivalentes réalisées sur substrat de STO. L'impact de ceci a été directement constaté sur les propriétés fonctionnelles des couches hétéroépitaxiées de PZT. Ainsi une anisotropie importante de ces propriétés a pu être mise en évidence, en complétant cette étude par des mesures dans le plan a l'aide de peignes interdigités. Ces observations ont été cohérentes avec les mesures de la diffraction des rayons X en fonction de la température. Par ailleurs, les différentes méthodes et configurations de mesures du coefficient pyroélectrique sur PZT ont permis une meilleure compréhension du phénomène et la distinction des diverses contributions existantes. La mesure statique indirecte issue de la variation de la polarisation rémanente en fonction de la température renseigne sur l'effet pyroélectrique intrinsèque (et secondaire). Cependant les mesures dynamiques du courant pyroélectrique pendant un changement de la température contiennent toutes les contributions pyroélectriques et non pyroélectriques, comme les effets extrinsèques et le courant de relaxation. Des mesures pyroélectriques dynamiques sous champ électrique, se rapprochant des conditions de cycles de récupération d'énergie thermique, ont permis de montrer que des courants de conduction apparaissaient même pour des bonnes couches de PZT diélectriques épaisses. Ces courants masquent les courants pyroélectriques et rendent l'application de générateur électrique par cycles thermodynamiques sous champ électrique rédhibitoire. Des composants passifs n'utilisant pas ou peu de champs électriques tels que des capteurs devront plutôt être envisagées. / Due to the wasted heat in ever more compact microelectronic devices, the harvesting of thermal energy has become interesting for self-powering small devices. Consequently, pyroelectric materials witch couple a change in temperature to a change in electrical polarization may be used for the conversion of the thermal energy to an electric energy without necessity of maintaining thermal gradients that is a main drawback in compact devices with thermoelectric materials. In this thesis, PbZro.52Tio.48O3 (PZT) and BaxSr1-xTiUO3 (x = l and x = 0.7), with high pyroelectric coefficients are chosen, elaborated in thin epitaxial layers, characterized structurally and electrically to study their potential for thermal energy harvesting. This work has two aspects: the first consists in the development and optimization of the growth conditions of epitaxial heterostructures integrated on Si. The second one focuses on the study of the functional properties ( ferroelectric, dielectric and pyroelectric) and the estimation of the energy harvesting efficiency mainly of PZT layers. A correlation between these two aspects is then done. A change in the crystal structure is shown on the Si-integrated stacks in comparison with equivalent structures grown on STO substrate. This structural behavior impacts directly the functional properties of the heteroepitaxial layers of PZT. Th us, an important anisotropy of these properties was demonstrated and completed by a study of the in plane properties using measurements by interdigital capacitors. These observations were consistent with measurements of X - ray diffraction as a function of temperature. Otherwise, different methods and configurations of pyroelectric coefficient measurements on PZT have allowed a better understanding of the phenomenon and the distinction of the various existing contributions. The indirect static measurement resulting from the variation of the remnant polarization as a function of the temperature gives the intrinsic (and secondary) pyroelectric contributions. However, the dynamic measurements of the pyroelectric current during a change of the temperature contain all the pyroelectric and non-pyroelectric contributions, such as the extrinsic effects and the relaxation current . Dynamic pyroelectric measurements under an electric field are near to the conditions of thermal energy harvesting cycles. Conduction currents appeared, even for good layers of thick dielectric PZT, and mask the pyroelectric currents. This makes the application of electric generator by thermodynamic cycles under electric field prohibitive. Passive components using low or no electrical field such as sensors should be considered.