Submitted by Luciclea Silva (luci@ufpa.br) on 2018-12-10T16:43:24Z No. of bitstreams: 2 license_rdf: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) Dissertacao_Medicaomodulosfotovoltaicos.pdf: 4931911 bytes, checksum: ab257f04c2f9e0d4fc918cb83199b66f (MD5) / Approved for entry into archive by Luciclea Silva (luci@ufpa.br) on 2018-12-10T16:43:49Z (GMT) No. of bitstreams: 2 license_rdf: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) Dissertacao_Medicaomodulosfotovoltaicos.pdf: 4931911 bytes, checksum: ab257f04c2f9e0d4fc918cb83199b66f (MD5) / Made available in DSpace on 2018-12-10T16:43:49Z (GMT). No. of bitstreams: 2 license_rdf: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) Dissertacao_Medicaomodulosfotovoltaicos.pdf: 4931911 bytes, checksum: ab257f04c2f9e0d4fc918cb83199b66f (MD5) Previous issue date: 2018-08-16 / Com a crescente demanda de energia elétrica ao redor do mundo, cada vez mais as fontes renováveis de energia vêm adquirindo espaço na matriz energética mundial. Nesse contexto, a energia fotovoltaica tem se destacado com altos índices de crescimento. Contudo, com a sua inserção faz-se necessário dispor de meios para avaliação do desempenho dos módulos fotovoltaicos, que pode ser realizado através da obtenção de sua curva característica I-V. A partir desta os parâmetros elétricos do módulo podem ser definidos, além de ser um indicador de possíveis falhas de fabricação, conexão ou possível sombreamento das células. Através do uso de simuladores solares, tornou-se mais rápido e confiável a obtenção de tal curva. No entanto, os altos custos de um simulador limitam o acesso a tal tipo de medição e, além disso, estes se restringem ao ensaio individual de módulos. Este trabalho busca avaliar uma metodologia para aquisição de curva I-V sob sol-real. Para isto, foram utilizadas duas cargas capacitivas e um módulo de referência para medida de irradiância e temperatura de operação do gerador fotovoltaico. As condições padrões de teste são obtidas por meio do que é descrito na norma IEC 60891. Módulos de tecnologia de silício foram testados e seus resultados confrontados com o do simulador solar presente no laboratório do GEDAE/UFPA. Os resultados obtidos indicam que dependendo da forma de cálculo e considerações acerca da medição da temperatura, esta pode ser uma metodologia adequada para medição de módulos fotovoltaicos em campo. / With the increasing demand for electricity worldwide, renewable energy sources are increasingly acquiring space in the world’s energy matrix. In this context, photovoltaic energy has stood out with high growth rates. However, it is necessary to have means to evaluate the performance of the photovoltaic modules. This can be done by means of its characteristic I-V curve, from which the module’s electrical parameters can be evaluated and used as an indicator of possible manufacturing faults, connection or shading. The use of solar simulators is a faster and more reliable to obtain such I-V curve. However, the high costs of a simulator limits access to such measurement, moreover, it is limited to measure only a single PV module. This work seeks to evaluate a methodology for the I-V curve acquisition under outdoor conditions by using two capacitive loads and a reference module as irradiance and temperature sensor. The standard test conditions are obtained by means of IEC 60891 procedures. Silicon technology modules were tested and their results were compared with indoor measurement, using the solar simulator located at GEDAE/UFPA solar laboratory. The results indicated that, depending on which calculation method and considerations related to temperature, this can be a suitable methodology for the measurement of a photovoltaic module.

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied. The film’s electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.

Organic molecules such as porphyrins and alkanethiols are currently being investigated for applications such as sensors, light-emitting diodes and single electron transistors. Porphyrins are stable, highly conjugated compounds and the choice of metal ion and substituents bound to the macrocycle as well as other effects such as chemical surrounding and cluster size modulate the electronic and photonic properties of the molecule. Porphyrins and their derivatives are relatively non-toxic and their very rich photo- and electro-chemistry, and small HOMO-LUMO gaps make them outstanding candidates for use in molecularly-enhanced electronic applications. For these studies, self-assembled tri-pyridyl porphyrin thiol derivatives have been fully characterized on Au(111) surfaces. A variety of surface characterization techniques such as Atomic Force Microscopy (AFM), Scanning Tunneling Microscopy (STM), FT-IR spectroscopy and X-ray photoelectron spectroscopy (XPS) have been implemented in order to obtain information regarding the attachment orientation based on the angle and physical height of the molecule, conductivity which is determined based on the apparent height and current-voltage (I-V) measurements of the molecule, conductance switching behavior due to conformational or other effects as well as the stability of the molecular ensembles. Specifically, the transport properties of free base and zinc coordinated tri-pyridyl porphyrin thiol molecular islands inserted into a dodecanethiol matrix on Au(111) were investigated using STM and cross-wire inelastic electron tunneling spectroscopy (IETS). The zinc porphyrin thiol islands observed by STM exhibited reversible bias induced switching at high surface coverage due to the formation of Coulomb islands of ca. 10 nm diameter driven by porphyrin aggregation. Low temperature measurements (~ 4 K) from crossed-wire junctions verified the appearance of a Coulomb staircase and blockade which was not observed for single molecules of this compound or for the analogous free base. Scanning probe lithography via nanografting has been implemented to directly assemble nanoscale patterns of zinc porphyrin thiols and 16-mercapotohexadecanoic acid on Au surfaces. Matrix effects during nanopatterning including solvent and background SAMs have been investigated and ultimately ~ 10 nm islands of zinc porphyrins have been fabricated which is the optimal size for the observed switching effect.

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied. The film’s electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.

Quantum dots exhibit strongly size-dependent optical and electrical properties. The ability to join the dots into complex assemblies creates many opportunities for scientific discovery. This motivated our present research work on QDIPs, DWELLs, and graphene like QDs. The intention of this research was to study the size dependent achievements of QDIPs, DWELLs, and graphene like QDs with those of competitive technologies, with the emphasis on the material properties, device structure, and their impact on the device performance. In this dissertation four research studies pertaining to optical properties of quantum dot and dot-in-a-well infrared photodetectors, I-V characteristics of graphene quantum dots, and energy and spin texture of germanene quantum dots are presented. Improving self-assembled QD is a key issue in the increasing the absorption and improving the performance. In the present research work, an ideal self-assembled QD structure is analyzed theoretically with twenty-hole levels (Intraband optical transitions within the valence band) and twenty-electron energy levels (DWELL). Continuing the efforts to study self-assembled QDs we extended our work to graphene like quantum dots (graphene and germanene) to study the electronic transport properties. We study numerically the intraband optical transitions within the valence band of InxGa1-xAs/GaAs pyramidal quantum dots. We analyze the possibility of tuning of corresponding absorption spectra by varying the size and composition of the dots. Both ‘x ’ and the size of the quantum dot base are varied. We have found that the absorption spectra of such quantum dots are more sensitive to the in-plane incident light. We present numerically obtained absorption optical spectra of n-doped InAs/In0.15Ga0.85As/GaAs quantum dot-in-a-well systems. The absorption spectra are mainly determined by the size of the quantum dot and have weak dependence on the thickness of the quantum well and position of the dot in a well. The dot-in-a-well system is sensitive to both in-plane and out-of-plane polarizations of the incident light with much stronger absorption intensities for the in-plane-polarized light. We also present theoretically obtained I-V characteristics of graphene quantum dots, which are realized as a small piece of monolayer graphene. We describe graphene within the nearest-neighbor tight-binding model. The current versus the bias voltage has typical step-like shape, which is due to discrete energy spectrum of the quantum dot. The current through the dot system also depends on the position of the electrodes relative to the quantum dot. In relation to graphene quantum dots, we present our study of buckled graphene-like materials, like germanene and silicene. We consider theoretically germanene quantum dot, consisting of 13, 27, and 35 germanium atoms. Due to strong spin-orbit interaction and buckled structure of the germanene layer, the direction of the spin of an electron in the quantum dot depends on both the electron energy and external perpendicular electric field. With variation of energy, the direction of spin changes by approximately 4.50. Application of external electric field results in rotation of electron spin by approximately 0.50, where the direction of rotation depends on the electron energy.

<p>The purpose of this study is to develop a flexible computer tool to predict the power produced by a photovoltaic (PV) panel. The performance of the PV panel is dependent on the incident solar radiation and the cell temperature. The computer tool predicts voltage-current curves, power-voltage curves, and maximum power point values. Five different models are implemented to predict the temperature of the panel, and comparison between the different thermal models is good. A thermal capacitance approach that uses a simple relationship for the forced convection heat transfer coefficient is used to predict the cell temperature. Both the electrical and temperature models are verified through comparisons using PVWatts and validated by comparisons to measured values. The model is flexible in the sense that it can be applied to PV arrays of any size, at any location, and of different cell types. After being verified and validated, the model is used to investigate the effects of cooling on the photovoltaic panel to improve the panel efficiency and increase its power output. Typical results show that for every degree Celsius rise in temperature, the efficiency of the solar panel is reduced by 0.5%. The effect of cooling and the resulting increase in energy production in two different climatic zones are studied and discussed. </p>