Orientador: Fernando Iikawa / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-21T01:34:49Z (GMT). No. of bitstreams: 1 Girardi_TiagoIllipronti_M.pdf: 2091533 bytes, checksum: 1e5e58f3f5149c97c47c1bf44b7aa186 (MD5) Previous issue date: 2012 / Resumo: Neste trabalho, estudamos o efeito de diferentes condições de interface de InP/GaAs nas propriedades ópticas de pontos quânticos auto-organizados, crescidos por epitaxia de feixe químico, no modo Stranskii-Krastanov. Espera-se que os pontos quânticos de InP/GaAs apresentem alinhamento de bandas do tipo II, e somente os elétrons ficam confinados, enquanto os buracos ficam localizados nas camadas de GaAs em volta do ponto quântico, atraídos pelo elétron. No entanto, devido ao efeito de mistura de átomos nas interfaces o perfil de potencial nas interfaces pode ser alterado significativamente, afetando, com isso, as propriedades ópticas dos pontos quânticos. Foram estudadas amostras com as seguintes condições de interface entre a camada de InP e as camadas de GaAs: inclusão ou não de uma camada de InGaP em uma ou nas duas interfaces. O InGaP gera uma barreira para ambos os tipos de portadores de carga em uma junção tanto com o GaAs como InP e evita a difusa de As das camadas de GaAs para a de InP. Através de medidas de fotoluminescência resolvida no tempo, observamos a variação do tempo de decaimento da emissão óptica associada aos pontos quânticos de acordo com as diferentes condições de interface. Foi observado um tempo curto de decaimento em amostras sem a inclusão de InGaP e com a inclusão apenas na interface superior, enquanto foi observado um tempo longo quando incluímos camadas de InGaP em ambas as interfaces. O tempo de decaimento curto é incompatível com o alinhamento de bandas do tipo II, que deveria separar espacialmente o elétron do buraco. A partir desses resultados e estudos anteriores a esse trabalho, pudemos concluir que o tempo curto se deve à mistura de átomos nas regiões de ambas as interfaces, gerando ligas que localizam os portadores próximos um ao outro. O tempo longo na amostra contendo InGaP nas duas interfaces é atribuído à separação espacial do elétron e do buraco. O efeito de mistura de átomos nas interfaces, neste caso, não forma uma liga na interface que localize os dois tipos de portadores próximos um ao outro. Isso pode ser uma alternativa de preparação de pontos quânticos de InP/GaAs onde se mantém separados espacialmente o elétron e o buraco / Abstract: We studied the effect of different interface conditions on the optical properties of InP/GaAs self-assembled quantum dots grown by chemical beam epitaxy in the Stranskii-Krastanov mode. InP/GaAs quantum dots is expected to present type II band alignment, and only electrons are confined, whereas the holes are localized in the GaAs layers around the quantum dot, attracted by the electron. However, due to the atomic intermixing effect in the interface the potential profile can be strongly changed, affecting the optical properties of the quantum dots. We studied samples with the following conditions at the interfaces between the InP layer and GaAs layers: the inclusion, or the lack of, a InGaP layer at one of or both interfaces. InGaP generates a barrier for both types of carriers in a junction with GaAs and InP, and avoid the diffusion of As from the GaAs layers to the InP one. Using time-resolved photo-luminescence, we observed a change of the optical emission decay times associated to the quantum dots as the interface condition is changed. We observed a short decay lifetime in samples without InGaP layers and with the inclusion in the top interface only, whereas we observed a long decay time when we included InGaP layers in both interfaces. The short decay lifetime is incompatible with the type II band alignment, where the electron and the hole should be spatially separated. Using these and other previous results, we concluded that the short decay lifetime is due to the atomic intermixing in both interfaces regions, forming alloys that localize the carriers near each other. The long lifetime observed for sample containing InGaP in both interfaces is attributed to the large electron-hole spatial separation. In this case intermixing effects at the interfaces do not form a potential well to localize the carries near each other / Mestrado / Física / Mestre em Física

The objective of this study is analysing the characteristics of five different solar cell technologies regarding their efficiency, fill factor, cost and environmental impacts and comparing their improvement records over years considering their efficiency. The five solar cell technologies of interest are amorphous silicon, monocrystalline silicon, polycrystalline silicon, cupper indium gallium selenide thin film and cadmium telluride thin film. The structure and manufacturing process of each of cell technologies were discussed. The study was conducted by the aid of available scientific reports regarding the electrical characteristics of different solar cell technologies. The extracted information regarding efficiency rate and fill factor was analysed using graphs and significant findings are discussed. The five technologies are also compared regarding their cost and ease of fabrication and their impacts on environment and recycling challenges. The result of this study is suggesting the most promising technology that may be the optimal option for further investment and research.

Les méthodes d'imagerie médicale non invasives, comme la scintigraphie monophotonique (SPECT) ou la tomographie par émission de positons (PET), sont des outils précieux pour le développement et la validation de nouvelles molécules thérapeutiques. Cette approche nécessite la fixation d'une molécule émettrice d'un signal sur un traceur biologique, par exemple par marquage radioisotopique. Parmi les radionucléides largement utilisés en médecine nucléaire, des cations tels que 111In3+ pour la SPECT, 64Cu2+ et 68Ga3+ pour la PET ont été mis en œuvre ces dernières années. Afin de minimiser la distribution de l'élément radioactif par transmétallation ou par transchélation dans l'organisme, il est indispensable de piéger sélectivement le radiométal visé par des ligands adaptés qui forment des complexes stables et inertes vis-à-vis de la démétallation. De nombreux travaux impliquant des ligands polyazotés linéaires ou cycliques ont été entrepris, mais le choix des ligands a rarement été étayé par une caractérisation structurale, thermodynamique et cinétique complète de leurs propriétés de coordination. L'objet de nos travaux est l'étude physico-chimique de ligands modèles N fonctionnalisés en série tétraazamacrocyclique afin d'évaluer l'impact du remplacement d' un groupe acétate par une fonction acétamide lors de la conjugaison du macrocycle au vecteur biologique via un bras de coordination. Les constantes de formation des complexes avec les isotopes naturels du Cu2+, Ga3+ et In3+, ainsi qu'avec les cations métalliques biologiquement importants tels que le Mg2+, Ca2+, Fe3+ et Zn2+ ont été mesurées. Par la suite, nous nous sommes efforcés de synthétiser et d'isoler les complexes métalliques formés avec les ions ciblés (Cu2+, Ga3+, In3+) dans le but de les caractériser par différentes méthodes spectroscopiques (RMN, RPE, UV-visible, IR, MS-ESI) ainsi que par diffraction des rayons X. Par ailleurs, les potentiels redox des complexes de cuivre(II) ont été déterminés dans l'optique d'identifier ceux qui ne sont pas susceptibles d'être réduits par les réducteurs physiologiques. / Noninvasive medical imaging techniques such as single-photon emission computed tomography (SPECT) or positron emission tomography (PET), are valuable tools for the development and validation of new therapeutic molecules. That approach requires the conjugation of a radioactive source emitting either y-rays or positrons with a biological tracer (e.g. DOTATOC). Among the potentially useful radionuclides available, 111In3+ (SPECT), 64Cu2+, and 68Ga3+ (PET) have attracted increasing attention over the last years for medical applications. To minimize the in vivo release of the radioactive cation by transmetalation or transchelation with biological ligands, it is essential to trap selectively the targeted radiometal by a suitable bifunctional chelator that forms stable and inert complexes. Many studies involving linear or cyclic sequestering agents have been reported, but their choice has only rarely been supported by a thorough structural, thermodynamic, and kinetic characterization of their coordination properties. The purpose of our work is to assess the structural and thermodynamic consequences of replacing an acetate binding unit by an amide group that mimics the peptide bond found in the linker of DOTATOC-like radiopharmaceuticals. Complexes incorporating 12, 13, or 14-membered N-functionalized tetraazamacrocycles and the targeted cations (Cu2+, Ga3+, In3+) have been isolated and structurally characterized by X-ray diffraction and various spectroscopic methods (NMR, EPR, UV-vis, IR, ESI-MS). Solution equilibrium studies with a range of cations including some biologically important ones (Cu2+, Ga3+, In3+, Mg2+, Ca2+, Fe3+, Zn2+) will also been presented, together with electrochemical measurements on some copper(II) complexes which are not likely to be reduced under physiological conditions by biological reducing agents.

La théorie, la conception, l'optimisation et la caractérisation d'amplificateurs distribués en technologie TBDH InP 0,7 µm, pour les systèmes de communications optiques à 100 Gbit/s, sont présentés. Nous montrons comment l'exploitation adaptée du concept d'amplificateur distribué avec une technologie de transistors bipolaires à produit vitesse-amplitude élevé a permis la réalisation d'un driver de modulateur électro-optique fournissant une amplitude différentielle d'attaque de 6,2 et 5,9 Vpp, à 100 et 112 Gbit/s, respectivement, avec une qualité de signal élevée. Ce circuit établit ainsi le record de produit vitesse-amplitude à 660 Gbit/s.V sur tranche et 575 Gbit/s.V en module hyperfréquence. Dans le cadre du projet Européen POLYSYS, il a été associé à un laser accordable et un modulateur pour la réalisation d'un module transmetteur optoélectronique compact, démontrant des performances avançant l'état de l'art des communications optiques courtes distances à 100 Gbit/s. / The theory, design, optimisation and characterisation of distributed amplifiers in 0.7-µm InP DHBT technology, for 100-Gbit/s optical communication systems, are presented. We show how the appropriate implementation of the distributed amplifier concept in a bipolar transistors technology with high swing-speed product has enabled the realisation of an electro-optic modulator driver with 6.2- and 5.9-Vpp differential driving amplitude at 100 and 112 Gb/s, respectively, with a high signal quality. This circuit thus establishes the swing-speed product record at 660 Gb/s.V on wafer and at 575 Gb/s.V in a microwave module. In the frame of the European project POLYSYS, it has been co-packaged with a tunable laser and a modulator to realise a compact optoelectronic transmitter module, which has demonstrated performances advancing the state of the art of short reach 100-Gb/s optical communications.

Chapter 1. Supramolecular Gels and their Applications Supramolecular gels are viscoelastic materials composed of a solid like three dimensional fibrillary network that is embedded in a liquid. Supramolecular gels are derived from low molecular weight compounds (typically MW < 3000). In the 1990s, the investigations on gels were mainly focused on designing new gelator molecules. However, during the last decade, research focus shifted towards designing functional gels and their applications. As a result of extensive work in this area, gels have been found to have varied applications in the templated synthesis of inorganic nanomaterials, hybrid materials, light harvesting systems, as responsive system and sensors, and also in drug delivery, tissue engineering etc. This chapter gives an introduction to supramolecular hydrogels/organogels and relevant bile acid chemistry touching upon the gelation properties of the bile acid derivatives. Diverse applications of the supramolecular gels are also illustrated with several examples. Scheme 1. Various applications of functional supramolecular gels Chapter 2. Bile Acid derived novel Hydrogelators Part 1. Hydrogelation of Bile acid protected Amino acids and Hybrid Materials Hydrogels from low molecular weight molecules have significant importance in biomedical applications. In this chapter, we report injectable hydrogel formation from bile acid conjugates of various amino acids. Hydrogel formation was found to be dependent on multiple factors such as bile acid backbone structure, linkage between the bile acid and the amino acid, pH etc. Single crystal structures of lithocholyl phenylalanine, lithocholyl-glycine, lithocholyl-L valine and lithocholyl-L alanine were also determined. Finally, the hydrogel frameworks were utilized to produce hybrid materials with Gold and ZnO nanoparticles. Scheme 2. (a) Crystal structure of LC-LF-OH gelator molecule, (b) photograph of gel, (c) SEM and (d) AFM image of LC-LF-OH xerogel Part 2. Hydrogelation of bile acid-dipeptide conjugates and in situ synthesis of silver and gold nanoparticles in the hydrogel matrix Fabricating supramolecular hydrogels with embedded metal nanostructures are important for the design of novel hybrid nanocomposite materials for diverse applications such as bio sensing and chemo sensing platforms, catalytic and antibacterial functional materials etc. Supramolecular self-assembly of bile acid-dipeptide conjugates have led to the formation of new supramolecular hydrogels. Gelation of these molecules depends strongly on the hydrophobic character of the bile acids. Ag+ and Au3+ salts were incorporated in the hydrogels, and photo reduction and chemical reduction led to the in situ generation of Ag and Au NPs in these supramolecular hydrogels without the addition of any external stabilizing agent. The color, size and shape of silver nanoparticles formed by photo reduction depended on the amino acid residue on the side chain. Furthermore, the hydrogel-Ag nanocomposite was tested for its antimicrobial activity. Scheme 3. Bile acid based dipeptide hydrogelators and soft hybrid materials Chapter 3. Sonogels of bile salts of In(III): use in the formation of self-templated indium sulfide nanostructures In this chapter, facile hydrogel formation by Indium(III) cholate and deoxy cholate are reported. When In(III) solution was added to aqueous solutions of sodium cholate and sodium deoxy cholate and sonicated, the mixtures formed gels. The gels thus obtained were translucent/turbid and thermos irreversible. Rheological measurements showed that all of them could be classified as viscoelastic soft solids. Scanning electron microscopy and atomic force microscopy showed typical entangled three dimensional fibrous networks. The In-Ch hydrogel were further used to prepare nanostructured In2S3 in which the cholate units possibly acted as a surfactant to confine the growth of the Nano flakes. Scheme 4. In-Ch hydrogel (Photograph and SEM image of In-Ch gel) Chapter 4. Palladium-Hydrogel Nanocomposite for C-C Coupling Reactions Supported metallic nanoparticles are important composite materials owing to their enormous potential for applications in various fields. This chapter describes the in situ formation of palladium nanoparticles in a calcium-cholate (Ca-Ch) hydrogel by reduction with sodium cyan borohydride. The hydrogel matrix appeared to assist the controlled growth as well as stabilization of palladium nanoparticles. The palladium nanoparticle/Ca-Ch hydrogel hybrid was characterized by scanning and transmission electron microscopy, atomic force microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. Furthermore, PdNP/Ca-Ch hybrid xerogel was shown to act as an active catalyst for Suzuki reaction under aqueous aerobic conditions, up to 4 cycles. This PdNP/Ca-Ch xerogel retained its catalytic activities on storage for several months. Scheme 5. Palladium-hydrogel nanocomposite for C-C coupling reactions in water Chapter 5. Sensitization of Terbium/Europium in self-assembled cholate hydrogel: An approach towards the detection of amine vapours "Luminescent" lanthanides have intrinsic low molar absorptivity, although this problem can be addressed by complexing the lanthanide ion with suitable chelating ligands which improve the luminescence properties drastically. However the design of such systems often involves careful planning and laborious synthetic steps. It is therefore desirable to have a simpler way to sensitize lanthanides with high efficiency. It was observed in our group that trivalent lanthanides formed hydrogels on the addition of sodium cholate. This chapter describes the discovery of the several biphenyl derivatives (such as 4-biphenylcarbaxaldehyde, 4-acetylbiphenyl) for sensitization of Tb(III) and Eu(III) in lanthanide hydrogels. Sensitization of Tb(III) and Eu(III) were observed by doping was characterized by scanning and transmission electron microscopy, atomic force microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. Furthermore, PdNP/Ca-Ch hybrid xerogel was shown to act as an active catalyst for Suzuki reaction under aqueous aerobic conditions, up to 4 cycles. This PdNP/Ca-Ch xerogel retained its catalytic activities on storage for several months. Scheme 6. Schematic representation of the sensitization process (the arrangement of themolecules in the gel fiber is arbitrary)(For figures pl refer the abstract pdf file)

Spatially-resolved measurements of flame temperature have been demonstrated with diode lasers for the first time. The technique is based on the use of blue diode lasers to perform laser-induced fluorescence on indium atoms seeded to the flame. Temperature measurements have been carried out in laminar flames both by the two-line atomic fluorescence technique, and also by a novel line-shape thermometry method that requires the use of only a single diode laser. The first part of this work involved the development of blue extended cavity diode lasers with favourable tuning properties. Two custom-designed extended cavity diode lasers (ECDL) have been built, emitting at wavelengths of around 410 nm and 451 nm respectively. These devices are capable of mode-hop free tuning over ranges greater than 90 GHz. The performance of these devices exceeds that of commercially available systems and a patent application has been filed. High resolution fluorescence spectroscopy has been performed on both the 52P1/2→62S1/2 and 52P3/2→62S1/2 transitions of indium atoms seeded at trace quantities into atmospheric pressure flames. In both cases, the spectra obtained show excellent agreement with a theoretical fit based on the individual hyperfine components of the transition. The two ECDLs have been used to build a sensor for the measurement of temperature in combustion systems. It is much simpler, more compact, less expensive, and more versatile than any previously existing device. The two lasers were used sequentially to probe indium atoms seeded to the flame. The ratio of the resulting fluorescence signals is related to the relative populations in the two sub-levels of the spin-orbit split ground state of indium, and thus to the temperature. Temperature measurements have been successfully performed in a laminar flame and the data thus obtained do not need to be corrected by any ‘calibration constant’. This novel thermometry technique offers a robust alternative to traditional methods involving bulky high power lasers. A further development has been made by demonstrating a fluorescence line-shape thermometry technique requiring only a single diode laser excitation source. Progress has been made towards the goal of rapid temperature measurements appropriate to the study of turbulent flames. This involved the development of a simple technique for actively locking the wavelength of the blue diode laser to a resonance line of the tellurium molecule. A high-speed thermometry system would work by rapidly switching between the two locked laser beams using an optical modulator.

This thesis presents the results of investigations of the synthesis, structure and physical properties of multiferroic materials. Multiferroics are materials in which two or all three of ferroelectricity, ferromagnetism and ferroelasticity occur in the same phase. Such materials have the potential applications of their parent materials, as well as new ones because of the interaction between the order parameters. The thesis is organized into four sections. Section 1 gives an overview of multiferroics, explaining the origin of mul-tiferroicity , occurrence of magnetoelectric coupling, their possible technological ap-plications and the challenges involved. Section 2 gives the scope of the investigations. The specific objectives of the present research on yttrium chromite, heavy rare earth chromites, solid solutions of yttrium chromite, rare earth manganites doped with alkaline earth metals, charge-ordered rare earth ferrites and indium manganite are outlined. Experimental aspects of the work carried out are discussed in section 3. It gives details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. In section 4, results of the investigations are discussed. Magnetic and di-electric properties of yttrium chromite (YCrO3), heavy rare earth chromites and YCr1-xMnxO3 are reported in section 4.1. These materials show canted antiferro-magnetic behavior below the Nel transition temperatures and dielectric transitions at high temperatures. Role of local non-centrosymmetry is discussed based on high-resolution neutron powder diffraction data. In 4.2 we discuss the results of charge-ordered rare earth ferrites which show good magnetoelectric effect. Magnetic, dielectric and magneto-dielectric properties of YCr1-xMnxO3 (Ln = rare earth) are discussed in 4.3. These materials show magneto-dielectric effect. In 4.4 we discuss the near normal incidence far infrared reflectivity spectra of a single crystal of TbMnO3, in the spectral range of 50cm−1 to 700 cm−1 from 10 K to 300 K. Finally in 4.5, magnetic and dielectric properties of bulk and thin films of indium manganite are discussed.

The present work focuses on the growth and characterizations of GaN and InN layers and nanostructures on p-Si(100) and p-Si(111) substrates by plasma-assisted molecular beam epitaxy and the studies of GaN/p-Si and InN/p-Si heterojunctions properties. The thesis is divided in to seven different chapters. Chapter 1 gives a brief introduction on III-nitride materials, growth systems, substrates, possible device applications and technical background. Chapter 2 deals with experimental techniques including the details of PAMBE system used in the present work and characterization tools for III-nitride epitaxial layers as well as nanostructures. Chapter 3 involves the growth of GaN films on p-Si(100) and p-Si(111) substrates. Phase pure wurtzite GaN films are grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) are found to be phase mixtured, containing both cubic and hexagonal modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural and optical properties of GaN films grown with silicon nitride buffer layer grown at 800 oC, when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 oC. Core-level photoelectron spectroscopy of SixNy layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism is observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibites superior rectifying nature with reduced trap concentrations. Lowest ideality factors (~1.5) are observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively. A brief comparison of the structural, optical and heterojunction properties of GaN grown on Si(100) and Si(111) has been carried out. Chapter 4 involves the growth and characterizations of InN nanostructures and thinfilms on p-Si(100) and p-Si(111) substrates. InN QDs are grown on Si(100) at different densities. The PL characteristics of InN QDs are studied. A deterioration process of InN QDs, caused by the oxygen incorporation into the InN lattice and formation of In2O3/InN composite structures was established from the results of TEM, XPS and PL studies. The results confirm the partial oxidation of the outer shell of the InN QDs, while the inner core of the QDs remains unoxidized. InN nanorods are grown on p-Si(100), structural characterizations are carried out by SEM, and TEM. InN nanodots are grown on p-Si(100), structural characterizations are performed. InN films were grown on Si(100) and Si(111) substrates and structural characterizations are carried out. Chapter 5 deals with the the heterojunction properties of InN/p-Si(100) and InN/p-Si(111).The transport behavior of the InN NDs/p-Si(100) diodes is studied at various bias voltages and temperatures. The temperature dependent ZB BH and ideality factors of the forward I-V data are observed, while it is governed through the modified Richardson’s plot. The difference in FB BH and C-V BH and the deviation of ideality factor from unity indicate the presence of inhomogeneities at the interface. The band offsets derived from C-V measurements are found to be Δ EC=1.8 eV and Δ EV =1.3 eV, which are in close agreement with Anderson’s model. The band offsets of InN/p-Si heterojunctions are estimated using XPS data. A type-III band alignment with a valence band offset of Δ EV =1.39 eV and conduction band offset of ΔEC=1.81 eV is identified. The charge neutrality level model provides a reasonable description of the band alignment of the InN/p-Si interface. The interface dipole deduced by comparison with the electron affinity model is 0.06 eV. The transport studies of InN NR/p-Si(100) heterojunctions have been carried out by conductive atomic force microscopy (CAFM) as well as conventional large area contacts. Discussion of the electrical properties has been carried out based on local current-voltage (I-V) curves, as well as on the 2D conductance maps. The comparative studies on transport properties of diodes fabricated with InN NRs and NDs grown on p-Si(100) substrates and InN thin films grown on p-Si(111) substrates have also been carried out. Chapter 6 deals with the growth and characterizations of InN/GaN heterostructures on p-Si(100) and p-Si(111) substarets and also on the InN/GaN/p-Si heterojunction properties. The X-ray diffraction (XRD), scanning electron microscopy (SEM) studies reveal a considerable variation in crystalline quality of InN with grown parameters. Deterioration in the rectifying nature is observed in the case of InN/GaN/p-Si(100) heterojunction substrate when compared to InN/GaN/p-Si (111) due to the defect mediated tunneling effect, caused by the high defect concentration in the GaN and InN films grown on Si(100) and also due to the trap centers exist in the interfaces. Reduction in ideality factor is also observed in the case of n-InN/n-GaN/p–Si(111) when compared to n-InN/n-GaN/p–Si(100) heterojunction. The sum of the ideality factors of individual diodes is consistent with experimentally observed high ideality factors of n-InN/n-GaN/p–Si double heterojunctions due to double rectifying heterojunctions and metal semiconductor junctions. Variation of effective barrier heights and ideality factors with temperature are confirmed, which indicate the inhomogeneity in barrier height, might be due to various types of defects present at the GaN/Si and InN/GaN interfaces. The dependence of forward currents on both the voltage and temperatures are explained by multi step tunneling model and the activation energis were estimated to be 25meV and 100meV for n-InN/n-GaN/p–Si(100) and n-InN/n-GaN/p–Si(111) heterojunctions, respectively. Chapter 7 gives the summary of the present study and also discusses about future research directions in this area.

In this thesis I present and discuss the results of optical spectroscopy performed on InGaN/GaN single and multiple quantum well (QW) structures. I report on the optical properties of InGaN/GaN single and multiple QW structures, measured at high excitation power densities. I show a correlation exists between the reduction in PL efficiency at high excitation power densities, the phenomenon so-called ``efficiency-droop'', and a broadening of the PL spectra. I also show a distinct change in recombination dynamics, measured by time-resolved photoluminescence (PL), which occurs at the excitation power densities for which efficiency droop is measured. The broadening of the PL spectra at high excitation power densities is shown to occur due to a rapidly redshifting, short-lived high energy emission band. The high energy emission band is proposed to be due to the recombination of weakly localised/delocalised carriers occurring as a consequence of the progressive saturation of the local potential fluctuations responsible for carrier localisation, at high excitation power densities. I report on the effects of varying threading dislocation (TD) density on the optical properties of InGaN/GaN multiple QW structures. No systematic relationship exists between the room temperature internal quantum efficiency (IQE) and the TD density, in a series of nominally identical InGaN/GaN multiple QWs deposited on GaN templates of varying TD density. I also show the excitation power density dependence of the PL efficiency, at room temperatures, is unaffected for variation in the TD density between 2 x107 and 5 x109 cm-2. The independence of the optical properties to TD density is proposed to be a consequence of the strong carrier localisation, and hence short carrier diffusion lengths. I report on the effects of including an InGaN underlayer on the optical and microstructural properties of InGaN/GaN multiple QW structures. I show an increase in the room temperature IQE occurs for the structure containing the InGaN underlayer, compared to the reference. I show using PL excitation spectroscopy that an additional carrier transfer and recombination process occurs on the high energy side of the PL spectrum associated with the InGaN underlayer. Using PL decay time measurements I show the additional recombination process for carriers excited in the underlayer occurs on a faster timescale than the recombination at the peak of the PL spectrum. The additional contribution to the spectrum from the faster recombination process is proposed as responsible for the increase in room temperature IQE.

<div>Self-assembled templates allow the creation of many complex arrays of nanostructures, which would be extremely difficult and expensive, if not impossible, to realize using any of the other available fabrication techniques. The complexity of these advanced nanostructures, synthesized using the various template assisted electrodeposition techniques, can be controlled to nanometer scale range by tuning the structural properties of the template, which is achieved by adjusting its various growth parameters during the self-assembly process.</div><div>Electrodeposition allows the creation of arrays of various metallic and semiconducting nanostructures. Monitoring the electrodeposition conditions permit the creation of single crystalline nanostructures of a particular material, or the formation of heterostructures using multiple electrodeposition steps. This work demonstrates the template assisted electrodeposition of vertically aligned nanowire arrays, both straight and branched, of metals, and a direct bandgap, III-V semiconductor, indium antimonide (InSb), which has one of the smallest known bandgap of any material. The template assisted electrodeposition of metallic, and InSb inverse opal (IO) structures is also shown, and the fabrication of a novel zipper shaped nanostructure by laser photomodification of a Ni IO structure is reported.</div><div>The optical characterization of the various nanostructures realized in this work have been examined. The results from this work confirm the ability to tune the optical spectra of nanostructures of the same material with similar volume fill fractions by structural modulation, where the different optical responses can be attributed to the structural differences of the actual structure as opposed to the material properties of the solid.</div>