Global ETD Search

601	Charakterizace elektronických vlastností nanodrátů pro elektrochemii / Characterization of electronic properties of nanowires for electrochemistry Kovařík, Martin January 2019 (has links) Elektrochemické metody nacházejí využití v mnoha aplikacích (např. senzorice, skladování el. energie nebo katalýze). Jejich nespornou výhodou je nízká finanční náročnost na přístrojové vybavení. Abychom lépe porozuměli procesům probíhajícím na elektrodách, je dobré znát elektronickou pásovou strukturu materiálu elektrody. Úkolem této práce je vyhodnotit výstupní práci a pozici hrany valenčního pásu nových materiálů pro elektrody, konkrétně cínem dopovaného oxidu india pokrytého nanotrubicemi sulfidu wolframičitého. Ultrafialová fotoelektronová spektroskopie a Kelvinova silová mikroskopie jsou metody použité pro tuto analýzu. Zvláštní důraz je kladen na přípravu vzorků elektrod pro měření, aby nedošlo k nesprávné interpretaci výsledků vlivem vnějších efektů jako je např. kontaminace nebo modifikace povrchu.
602	Příprava nízkodimenzionálních III-V polovodičů / Preparation of low-dimensional III-V semiconductors Stanislav, Silvestr January 2021 (has links) Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE). Nanodráty byly vyrobeny na substrátu s termálně dekomponovaným oxidem a rovněž na substrátech s litograficky připravenou oxidovou maskou.
603	Near-Infrared Cu-In-Se-Based Colloidal Nanocrystals via Cation Exchange Lox, Josephine F. L., Dang, Zhiya, Dzhagan, Volodymyr, Spittel, Daniel, Martín-García, Beatriz, Moreels, Iwan, Zahn, Dietrich R.T., Lesnyak, Vladimir 17 December 2019 (has links) We developed a three-step colloidal synthesis of near-infrared active Cu-In-Se (CISe)/ZnS core/shell nanocrystals (NCs) via a sequential partial cation exchange. In the first step binary highly copper deficient Cu2‒xSe NCs were synthesized, followed by a partial cation exchange of copper to indium ions yielding CISe NCs. In order to enhance the stability and the photoluminescence (PL) properties of the NCs, a subsequent ZnS shell was grown, resulting in CISe/ZnS core/shell NCs. These core/shell hetero-NCs exhibited a dramatic increase in size and a restructuring to trigonal pyramidal particles. The reaction parameters, e.g. the Cu:Se-ratio, the temperature and the time were carefully tuned enabling a distinct control over the size and the composition of the NCs. By varying only the size of the CISe/ZnS NCs (from 9 to 18 nm) the PL spectra could be tuned covering a wide range with maxima from 990 nm to 1210 nm. Thus, in these experiments we demonstrate a clear dependence of the optical properties of these materials on their size and extend the PL range of CISe-based nanoparticles further to the infrared part of the spectrum. Furthermore, the relatively large size of these NCs allows their detailed structural analysis via electron microscopy techniques, which is particularly challenging in the case of small particles and especially important to relate the size, composition and crystal structure to their optoelectronic properties. info:eu-repo/classification/ddc/540 ddc:540
604	Photonic Integration with III-V Semiconductor Technologies Paul, Tuhin 13 April 2022 (has links) This dissertation documents works on two projects, which are broadly related to photonic integration using III-V semiconductor platform for fiber-based optical communication. Our principal project aims to demonstrate continuous variable quantum key distribution (CV-QKD) with InP-based photonic integrated cir cuit at the 1550 nanometer of optical wavelength. CV QKD protocols, in which the key is encoded in the quadrature variables of light, has generated immense interest over the years because of its compatibility with the existing telecom infrastructure. In this thesis, we have proposed a design of a photonic inte grated circuit potentially capable of realizing this protocol with coherent states of light. From the practical perspective, we have basically designed an optical transmitter and an optical receiver capable of carrying out coherent communi cation via the optical fiber. Initially, we established a mathematical model of the transceiver system based on the optical transfer matrix of the foundry spe cific (Fraunhofer Heinrich Hertz Institute-Germany) building blocks. We have shown that our chip design is versatile in the sense that it can support multiple modulation schemes. Based on the mathematical model, we estimated the link budget to assess the feasibility of on-chip implementation of our protocol. Then we ran a circuit level simulation using the process design kit provided by our foundry to put our analysis on a better footing. The encouraging result from this step prompted us to generate the mask layout for our transceiver chips, which we eventually submitted to the foundry. The other project in the thesis grew out of a collaboration with one of our industry partners. The goal of the project is to enhance the performance of a distributed feedback laser emitting at the 1310 nanometer of optical wavelength by optimizing its design. To that end, we first derived the expression for transmission and reflection spectrum for the laser cavity. Those expressions contained parameters which needed to be obtained from the transverse and the longitudinal mode analysis of the laser. We performed the transverse mode analysis and the longitudinal mode analysis with commercially available numerical solvers. Those mode profiles critically depend on the grating physical parameters. Therefore by tweaking grating dimensions one can control the transmission characteristics of the laser. Gaussian Quantum Information Phase Space Quantum Optics Photonic Integrated Circuits Private Communication Indium Phosphide Distributed Feedback Laser Coupled Mode Theory Diffraction Grating Coherent Optical Communication
605	Growth and Characterization of Wide Band-Gap Group III Oxide Semiconductors by MOCVD Hernandez, Armando, Jr. January 2021 (has links) No description available. Physics Materials Science MOCVD Gallium Oxide Indium Gallium Oxide X-ray Diffraction Thermoluminescence Hall effect Semiconductors UV-Vis absorption Atomic force microscopy Secondary ion mass spectroscopy Proton induces x-ray emission
606	Development and Characterization of Multi-Sensor Platforms for Real-Time Sensing Applications Alemayehu, Birhanu Desta 08 August 2023 (has links) No description available. Electrical Engineering Materials Science Nanotechnology Surface Acoustic Wave Gas Sensor Ethanol and humidity sensor Indium doped tin oxide sensing film
607	Compositional Effect on Low-Temperature Transient Liquid Phase Sintering of Tin Indium Solder Paste John Osarugue Obamedo (11250306) 03 January 2022 (has links) <div> <div> <div> <p>Transient liquid phase sintering (TLPS) technologies are potential low-temperature solders for sustainable replacements of lead-based solders and high-temperature lead-free solders. Compared to solid-state sintering and lead-free solders, TLPS uses lower temperatures and is, thus, suitable for assembling temperature-sensitive components. TLPS is a non- equilibrium process and determining the kinetics is critical to the estimation of processing times needed for good joining. The tin-indium (Sn-In) system with a eutectic temperature of 119°C is being considered as the basis for a TLPS system when combined with tin. Most models of TLPS include interdiffusion, dissolution, isothermal solidification, and homogenization and are based on simple binary alloys without intermediate phases. The Sn-In system has two intermediate phases and thus the reaction kinetics require additional terms in the modeling. Differential Scanning Calorimetry (DSC) has been used to measure the response of Sn-In alloys during the transient liquid phase reaction. Preparation of tin indium alloys for microstructural analysis is challenging due to their very low hardness. This study uses freeze-fracturing of the tin indium alloys to obtain sections for microstructural analysis. The combination of DSC and microstructure analysis provides information on the reaction kinetics. It was observed that the solid/liquid reaction does not proceed as quickly as desired, that is, substantial liquid remains after annealing even though the overall composition is in the single-phase region in the phase diagram. </p> </div> </div> </div> Microelectronics and Integrated Circuits Synthesis of Materials TLPS Solder Paste Tin-Indium Transient Liquid Phase Sintering Binary Solder Sn-In DSC Solder LN2 Fracture Solder alloys Sintering solder BEOL Sn-In Phase Diagram
608	Rubidium Packaging for On-Chip Spectroscopy Hill, Cameron Louis 01 December 2015 (has links) (PDF) This thesis presents rubidium packaging methods for integration using anti-resonant reflecting optical waveguides (ARROWs) on a planar chip. The atomic vapor ARROW confines light through rubidium vapor, increases the light-vapor interaction length, decreases the size of the atomic cell to chip scales, and opens up possibilities for waveguide systems on chips for additional optoelectronic devices. Rubidium vapor packaging for long-life times are essential for realizing feasibly useful devices. Considerations of outgassing, leaking and chemical compatibilities of materials in rubidium vapor cells lead to an all-metal design. The effect of these characteristics on the rubidium D2 line spectra is considered. rubidium spectroscopy ARROW on-chip waveguide rubidium D2 line self-assembled monolayer atomic vapor lifetime atomic vapor packaging rubidium pressure broadening atomic vapor flow electroplating indium slow light electromagnetically induced transparency Cameron Hill Aaron Hawkins Electrical and Computer Engineering
609	Cooling of electrically insulated high voltage electrodes down to 30 mK / Kühlung von elektrisch isolierten Hochspannungselektroden bis 30 mK Eisel, Thomas 07 November 2011 (has links) (PDF) The Antimatter Experiment: Gravity, Interferometry, Spectroscopy (AEGIS) at the European Organization for Nuclear Research (CERN) is an experiment investigating the influence of earth’s gravitational force upon antimatter. To perform precise measurements the antimatter needs to be cooled to a temperature of 100 mK. This will be done in a Penning trap, formed by several electrodes, which are charged with several kV and have to be individually electrically insulated. The trap is thermally linked to a mixing chamber of a 3He-4He dilution refrigerator. Two link designs are examined, the Rod design and the Sandwich design. The Rod design electrically connects a single electrode with a heat exchanger, immersed in the helium of the mixing chamber, by a copper pin. An alumina ring and the helium electrically insulate the Rod design. The Sandwich uses an electrically insulating sapphire plate sandwiched between the electrode and the mixing chamber. Indium layers on the sapphire plate are applied to improve the thermal contact. Four differently prepared test Sandwiches are investigated. They differ in the sapphire surface roughness and in the application method of the indium layers. Measurements with static and sinusoidal heat loads are performed to uncover the behavior of the thermal boundary resistances. The thermal total resistance of the best Sandwich shows a temperature dependency of T-2,64 and is significantly lower, with roughly 30 cm2K4/W at 50 mK, than experimental data found in the literature. The estimated thermal boundary resistance between indium and sapphire agrees very well with the value of the acoustic mismatch theory at low temperatures. In both designs, homemade heat exchangers are integrated to transfer the heat to the cold helium. These heat exchangers are based on sintered structures to increase the heat transferring surface and to overcome the significant influence of the thermal resistance (Kapitza resistance). The heat exchangers are optimized concerning the adherence of the sinter to the substrate and its sinter height, e.g. its thermal penetration length. Ruthenium oxide metallic resistors (RuO2) are used as temperature sensors for the investigations. They consist of various materials, which affect the reproducibility. The sensor conditioning and the resulting good reproducibility is discussed as well. cooling dilution refrigerator millikelvin high voltage electrical insulation thermal contact conductance thermal boundary resistance sapphire indium acoustic mismatch sintered heat exchanger sinter height thermal penetration length Kapitza resistance RuO2 sensor ruthenium oxide temperature sensor thermal cycling sensor conditioning micro cracks Kühlung Mischungskryostat Millikelvin Hochspannung elektrische Isolierung Thermischer Kontaktwiderstand Saphir Indium Acoustic Mismatch Theorie gesinterte Wärmeübertrager Sinterhöhe thermische Eindringtiefe Kapitza Widerstand RuO2-Sensor Ruthenium Oxid Temperatursensor thermisches Zyklieren Sensor-Konditionierung Mikrorisse ddc:620 rvk:UB 5180
610	Cooling of electrically insulated high voltage electrodes down to 30 mK Eisel, Thomas 04 October 2011 (has links) The Antimatter Experiment: Gravity, Interferometry, Spectroscopy (AEGIS) at the European Organization for Nuclear Research (CERN) is an experiment investigating the influence of earth’s gravitational force upon antimatter. To perform precise measurements the antimatter needs to be cooled to a temperature of 100 mK. This will be done in a Penning trap, formed by several electrodes, which are charged with several kV and have to be individually electrically insulated. The trap is thermally linked to a mixing chamber of a 3He-4He dilution refrigerator. Two link designs are examined, the Rod design and the Sandwich design. The Rod design electrically connects a single electrode with a heat exchanger, immersed in the helium of the mixing chamber, by a copper pin. An alumina ring and the helium electrically insulate the Rod design. The Sandwich uses an electrically insulating sapphire plate sandwiched between the electrode and the mixing chamber. Indium layers on the sapphire plate are applied to improve the thermal contact. Four differently prepared test Sandwiches are investigated. They differ in the sapphire surface roughness and in the application method of the indium layers. Measurements with static and sinusoidal heat loads are performed to uncover the behavior of the thermal boundary resistances. The thermal total resistance of the best Sandwich shows a temperature dependency of T-2,64 and is significantly lower, with roughly 30 cm2K4/W at 50 mK, than experimental data found in the literature. The estimated thermal boundary resistance between indium and sapphire agrees very well with the value of the acoustic mismatch theory at low temperatures. In both designs, homemade heat exchangers are integrated to transfer the heat to the cold helium. These heat exchangers are based on sintered structures to increase the heat transferring surface and to overcome the significant influence of the thermal resistance (Kapitza resistance). The heat exchangers are optimized concerning the adherence of the sinter to the substrate and its sinter height, e.g. its thermal penetration length. Ruthenium oxide metallic resistors (RuO2) are used as temperature sensors for the investigations. They consist of various materials, which affect the reproducibility. The sensor conditioning and the resulting good reproducibility is discussed as well. info:eu-repo/classification/ddc/620 ddc:620

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