4H-SiC based Metal-Oxide Semiconductor(MOS) capacitors are promising key components for next generation power devices. For high frequency power applications, however, there is a major drawback of this type of devices, i.e. they have low inversion channel mobility that consequently affects the switching operation in MOS Field-Effect Transistors (MOSFETs). Carbon clusters or excess carbon atoms in the interface between the dielectric layer and SiC is commonly considered to be the carrier trapping and scattering centers that lower the carrier channel mobility. Based on the previous work in the research group, a new fabrication process for forming the dielectric layer with a lower density of the trap states is investigated. The process consists of standard semiconductor cleaning, pre-treatments, pre-oxidation, plasma enhanced chemical vapor deposition (PECVD) and post oxidation annealing. I-V measurements of the dielectric strength showed that the resulting layers can sustain proper working condition under an electric field of at least 5MV/cm. C-V characteristics measurements provided the evidence that the proposed method can effectively reduce the interfacial states, which are main culprit for a large flat band voltage shift of C-V characteristics, in particular under annealing at 900°C in nitrogen atmosphere.

Magnetism in a solid | dia, para, ferro, or of other forms | originates majorly from its electrons; one could, infact, ignore the nuclear contribution. There are two types of electrons in a solid: bound, and free (also called itinerant). It is interesting to note that although several experimental techniques exist that measure the total magnetization/ susceptibility of a solid, no experiment directly probes the individual magnetic contributions from the bound and the itinerant electrons. In the past couple of decades, owing to the advent of sophisticated fabrication facilities, certain man-made, (ferro)magnetic materials have come into existence whose carrier concentrations can be tuned extrinsically: doped semiconductors like DMS (diluted magnetic semiconductors) and hexaborides are two such examples. However, whether the (ferro) magnetism in these materials originate from their itinerant carriers is still an open question. A conclusive answer to this question is eagerly awaited by the scientific community; the answer is not only supposed to solve debates related to the physics of ferromagnetism, but, also, should lend a helping hand in selecting right materials to build devices for upcoming exotic technologies such as Spintronics. A novel experimental technique is proposed in this work that directly measures the itinerant carrier magnetism of a solid. The technique is practically demonstrated on the bulk semiconductor: n-type GaAs. A Landau-Peierls itinerant (dia)magnetic susceptibility as low as 1 10 8 cm 3/mol | which is 10 3 times smaller than the magnetic background stemming from the bound electrons in the GaAs host lattice, and 10 times lower than the sensitivity limit of the SQUID | was clearly, and reproducibly detected from samples having carrier concentrations as low as 5 10 15 cm 3. The technique relies on measurements with MIS capacitors fabricated out of the given semiconductor. Unfortunately, as an artifact, such MIS fabrication processes unintentionally, but unavoidably, introduce certain energy levels in the semiconductor band-gap that unwantedly communicate with its bands by trapping and releasing carriers. Such traps lie along the interface of the semiconductor and the oxide. Though clear signals, which match with theoretically estimated signals within acceptable accuracy, have been measured from the itinerant electrons in GaAs, this work demonstrates theoretical calculations showing that the signals decrease in magnitude owing to the presence of such interface traps. Quantifying this decrement comes as an added advantage of this work, because such measurements can then directly probe the MIS interface and find the concentration of the interface traps (Dit) more accurately and precisely than what is done at present. Thus, the experimental technique this work proposes can also probe a given MIS interface, using time-varying magnetic fields, and reveal a more accurate and precise measure of Dit. Otherwise, the existing techniques for measuring Dit su er from imprecision caused by several theoretical assumptions. A more general technique which can extract Dit accurately and precisely, without needing to know the particular physical model that the interface traps follow for a given MIS capacitor, is what one requires at present, to give CMOS technology the direction and impetus it needs to cross-over to the non-Silicon territory. Such a technique is theoretically developed in this work. How a magnetic field a effects the MIS Energy Band Diagram is also derived in the process. The technique that is developed and demonstrated in this thesis, capable of directly probing both the itinerant magnetism and the MIS interface of a given semiconductor, depends on successfully measuring a very small voltage drop across a MIS capacitor when the latter is externally subjected to a high, time-varying magnetic field. This voltage signal originates because the semiconductor's electronic density of states depends on the magnetic field, thus rendering the semiconductor's electron chemical potential, i.e. the Fermi level, magnetic field dependent. The idea of detecting such magnetic field dependence of electron chemical potential was theoretically proposed more than five decades back, but an experimental detection of the phenomenon, in any bulk (i.e. three dimensional) solid, had remained elusive despite numerous trials. Virtually, the topic had been `dead' for the past couple of decades with very few reports (of trials) getting published on it. The primary reason behind such a failure is an interesting spurious effect that arises and overshadows the signal otherwise coming from the magnetic shift of the electron chemical potential. This is the spurious Hall voltage caused by the time-varying magnetic field and the eddy current it induces in the semiconductor following Faraday's Law of Electromagnetic Induction. Unless this Hall voltage can be reduced below a threshold, there is no hope of successfully measuring the sample signal. In this work, we have discussed about this spurious effect in details and have given experimental recipes to avoid it from interfering with the data. Infact the data we publish for n-GaAs is free from any such spurious effects. From that viewpoint, this work becomes the first to report the experimental detection of the magnetic field dependence of a Fermi level in any bulk solid. A common pulse magnet capable of producing high magnetic field pulses, lasting for only some tens of milliseconds, was built and used for the purpose of this work. For certain samples other than GaAs, however, the spurious Hall voltage may be larger and the proposed technique may fail as one may not be able to rule out the spurious effect with the simple recipe demonstrated here for GaAs. In such a case, measurements are encouraged, instead, in a special magnet uniquely developed to rule out the Hall voltage. This magnet was constructed in-house, and can sit on a table-top and generate magnetic fields as high as a few Teslas that can, further, be `temporally shaped' by the user. Such a class of pulse magnets whose pulse waveforms can be programmed over time are called controlled waveform magnets (CWMs) and the work presented in this thesis also demonstrates the construction and calibration of such a CWM.

Complex oxides are an intriguing field of solid-state research, as they can exhibit a wide variety of functional properties, such as ferroelasticity, ferroelectricity, ferro- and antiferromagnetism or an even more complicated type of magnetic ordering, the combination or interaction of those ferroic properties (multiferroicity), high spin polarization, or high-temperature superconductivity. Thus they are prospective candidates for future materials in microelectronics. It is a matter of fact that the performance of such oxide-based devices depends mainly on transport properties, which in turn depend on the distribution and density of intrinsic or extrinsic electronic interface states across the device structure. The present thesis focuses on the identification and characterization of such electronic properties by two different photoassisted spectroscopy techniques: surface photovoltage spectroscopy and photoelectron spectroscopy. This work especially deals with perovskite oxides, namely with the model perovskite strontium titanate (SrTiO3) as a substrate and three differently doped lanthanum manganite thin films (10-15 nm thickness) grown by pulsed laser deposition (PLD) on the SrTiO3 substrate(La0.7Sr0.3MnO3, La0.7Ca0.3MnO3, La0.7Ce0.3MnO3). The first part aims at the identification of electronic surface and interface states at the free SrTiO3 surface as well as at the three different lanthanum manganite/SrTiO3 interfaces. For that purpose three different experimental realizations of the surface photovoltage spectroscopy technique were implemented and employed: photoelectron spectroscopy under additional optical excitation, the capacitive detection of the photoinduced displacement current in a parallel-plate capacitor geometry under modulated optical excitation, and the classical Kelvin probe technique. The methods are evaluated comparatively with respect to their suitability to analyze the given oxidic interfaces. The main result of this first part is a map of the energetic positions and relaxation time constants of the surface states at the SrTiO3 surface as well as of the interface states at the lanthanum manganite/SrTiO3 interfaces within the SrTiO3 bandgap. The interface states were classified into film- and substrate-induced states and it could be demonstrated that an appropriate annealing procedure can dramatically decrease their densities. The second part tackles the problem of the manganese valence and the doping type of di- and tetravalent-ion-doped LaMnO3. The question whether the insulating parent compound LaMnO3 becomes an electron-doped semiconductor after doping with tetravalent cations such as Ce4+ - which would be in analogy to the well-established hole doping after partial substitution of La3+ by divalent cations such as Sr2+ or Ca2+ - has been discussed controversially in the literature so far. Due to the physics of the manganite crystal lattice the question can also be formulated in a different way: Can part of the manganese ions be driven from the Mn3+ state towards the Mn2+ state without any crystal instabilities or phase separation phenomena? In order to contribute to the clarification of this question, an extensive X-ray- and UV-photoelectron spectroscopy (XPS/UPS) investigation was performed. The three differently doped lanthanum manganite thin films were comparatively studied considering the exchange splitting of the Mn 3s core level line, which is a linear function of the Mn valence, as measured by XPS and the work function as extracted from UPS. All measurements were performed at different states of deoxygenation after heating in ultrahigh vacuum and reoxidation after heating in a pure oxygen atmosphere. Strong evidence for electron doping of the La0.7Ce0.3MnO3 film after deoxygenation was found. Furthermore, the reversible tunability of the Mn valence by variation of the oxygen content could be demonstrated for both tetravalent- and divalent-ion-doped lanthanum manganite films. / Oxidische Komplexverbindungen können eine Vielzahl an funktionellen Eigenschaften, wie z.B. Ferroelastizität, Ferroelektrizität, Ferro- und Antiferromagnetismus sowie kompliziertere magnetische Ordnungen, die Kombination und Interaktion solcher ferroischer Eigenschaften (Multiferroizität), hohe Spinpolarisation oder Hochtemperatursupraleitung aufweisen und gelten daher als aussichtsreiche Materialien für die zukünftige Mikroelektronik. Entscheidend für die Funktionsfähigkeit oxidischer Bauelemente sind deren elektronische Transporteigenschaften, die in äußerst sensibler Weise von der Verteilung und Dichte von ex- oder intrinsischen elektronischen Defektzuständen an Grenz- und Oberflächen innerhalb der Bauelementstruktur abhängen. Die vorliegende Arbeit beschäftigt sich mit der Spektroskopie solcher elektronischer Eigenschaften mittels photonenbasierter Methoden. Im Fokus stehen dabei perowskitische Oxide , speziell das Modellperowskit Strontiumtitanat (SrTiO3) als Substrat und darauf mittels gepulster Laserdeposition (PLD) abgeschiedene dünne Filme (10-15 nm Dicke) dotierter Lanthanmanganate (La0.7Sr0.3MnO, La0.7Ca0.3MnO3, La0.7Ce0.3MnO3). Im Rahmen einer halbleiterphysikalischen Interpretation widmet sich der erste Teilder Identifikation elektronischer Ober- und Grenzflächenzustände an der SrTiO3-Oberfläche sowie an verschiedenen Lanthanmanganat/SrTiO3-Grenzflächen mittels dreier unterschiedlicher experimenteller Methoden zur Vermessung der Oberflächenphotospannung: der Photoelektronenspektroskopie unter zusätzlicher optischer Anregung, einer kapazitiven Detektionsmethode in Plattenkondensatorgeometrie unter modulierter optischer Anregung und der optischen Kelvin-Sonde. Neben einem auf die bei oxidischen Ober- und Grenzflächen auftretenden besonderen Herausforderungen zugeschnittenen Methodenvergleich werden Grenzflächenzustände bezüglich ihrer energetischen Position in der Bandlücke des SrTiO3 und ihres Relaxationsverhaltens analysiert, als substrat- oder filminduziert klassifiziert, und die Verringerung ihrer Dichte nach geeigneter Ausheilprozedur wird nachgewiesen. Der zweite Teil der Arbeit befasst sich mit der in der Literatur bisher kontrovers diskutierten Frage, ob sich die isolierende Stammverbindung LaMnO3 durch Dotierung mit tetravalenten Kationen, wie z.B. Ce4+, in einen elektronendotierten Halbleiter verwandeln lässt - analog zur Herstellung lochdotierter Lanthanmanganate durch Dotierung mit divalenten Kationen, wie z.B. Sr2+ oder Ca2+. Die Frage ist äquivalent zur Betrachtung, ob unter Beibehaltung der Stabilität des Kristallgitters ein Teil der Manganionen vom Mn3+-Zustand in den Mn2+-Zustand übergehen kann. Um einen Beitrag zur Klärung dieses Problems zu leisten, wurden als elektronisch sensitive Methoden die Röntgen- und UV-Photoelektronenspektroskopie (XPS/UPS) gewählt. Die oben genannten Lanthanmanganatfilme wurden dazu hinsichtlich der Austauschaufspaltung der Mangan-3s-Linie im XP-Spektrum, die in linearer Weise von der Manganvalenz abhängt, und der anhand der Breite des UP-Spektrums ermittelten Austrittsarbeit jeweils nach Reinigung der Oberfläche im Ultrahochvakuum (UHV) vergleichend untersucht. Die Messungen wurden nach unterschiedlich starker Desoxidation durch Heizen im UHV und Reoxidierung durch Heizen in Sauerstoffatmosphäre durchgeführt. Es konnte nachgewiesen werden, dass eine Elektronendotierung des La0.7Ce0.3MnO3-Films bei geeigneter Einstellung des Sauerstoffgehalts tatsächlich möglich ist. Außerdem wurde gezeigt, dass sich sowohl in di- als auch in tetravalent dotierten Lanthanmanganatfilmen die Manganvalenz und damit der Dotierungstyp reversibel durchstimmen lässt.

No description available.

So far, only CMOS compatible and scalable hafnia-zirconia (HZO) based ferroelectric (FE) n-FeFETs have been reported. To enable the full ferroelectric hierarchy [1] both p- and n-type devices should be available. Here we report a p-FeFET with a large memory window (MW) for the first time. Moreover, we propose different integration schemes comprising structures with and without internal gate resulting in metal-FE-insulator-Si (MFIS) and metal-FE-metal-insulator-Si (MFMIS) devices which could be used to tackle the problem of interface (IF) degradation and possibly decrease the power consumption of the devices.