<p>Embedded computing systems in portable devices need to be energy efficient, yet they have to deliver adequate performance to the often computationally expensive applications. Dynamic voltage scaling is a technique that offers a speed versus power trade-off, allowing the application to achieve considerable energy savings and, at the same time, to meet the imposed time constraints.</p><p>In this thesis, we explore the possibility of using optimal voltage scaling algorithms based on nonlinear programming at the system level, for a complex multiprocessor scheduling problem. We present an optimization approach to the modeled nonlinear programming formulation of the continuous voltage selection problem excluding the consideration of transition overheads. Our approach achieves the same optimal results as the previous work using the same model, but due to its speed, can be efficiently used for design space exploration. We validate our results using numerous automatically generated benchmarks.</p>

<p>This master thesis deals with the study of ultra low power Low Noise Amplifier (LNA) for use inmedical implant device. Usually, low power consumption is required for a long battery lifetime andlonger operation. The target technology is 90nm CMOS process.First basic principle of LNA is discussed. Then based on a literature review of LNA design, theproposed LNA is presented in sub-threshold region which reduce power consumption through scalingthe supply voltage and through scaling current.The circuit implementation and simulations is presented to testify the performance of LNA .Besides thepower consumption simulated under the typical supply voltage (1V), it is also measured under someother low supply voltages (down to 0.5V) to investigate the minimum power consumption and theminimum noise figure. Evaluation results show that at a supply voltage of 1V the LNA performs a totalpower consumption of 20mW and a noise of 1dB. Proper performance is achieved with a current ofdown to 200uA and supply voltage of down to 0.45V, and a total power consumption of 200uW</p>

There are growing industrial demands for low-voltage supply and low-power consumption circuits and systems. This is especially true for very high integration level and very large scale integrated (VLSI) mixed-signal chips and system-on-a-chip. It is mainly due to the limited power dissipation within a small area and the costs related to the packaging and thermal management. In this research work, two low-voltage, low-power integrated circuits used for data communication systems are introduced. The first one is a high performance continuous-time linear phase filter with automatic frequency tuning. The filter can be used in hard disk driver systems and wired communication systems such as 1000Base-T transceivers. A pseudo-differential operational transconductance amplifier (OTA) based on transistors operating in triode region is used to achieve a large linear signal swing with low-voltage supplies. A common-mode (CM) control circuit that combines common-mode feedback (CMFB), common-mode feedforward (CMFF), and adaptive-bias has been proposed. With a 2.3V single supply, the filter’s total harmonic distortion is less than –44dB for a 2VPP differential input, which is due to the well controlled CM behavior. The ratio of the root mean square value of the ac signal to the power supply voltage is around 31%, which is much better than previous realizations. The second integrated circuit includes two LVDS drivers used for high-speed point-to-point links. By removing the stacked switches used in the conventional structures, both LVDS drivers can operate with ultra low-voltage supplies. Although the Double Current Sources (DCS) LVDS driver draws twice minimum static current as required by the signal swing, it is quite simple and achieves very high speed operation. The Switchable Current Sources (SCS) LVDS driver, by dynamically switching the current sources, draws minimum static current and reduces the power consumption by 60% compared to the previously reported LVDS drivers. Both LVDS drivers are compliant to the standards and operate at data rates up to gigabits-per-second.

Hybrid pixel detectors have been demonstrated to provide excellent quality detection of ionising photon radiation, particularly in X-ray imaging. Recently, there has been interest in developing a hybrid pixel detector specifically for photon dosimetry. This thesis is on the design, implementation, and preliminary characterisation of the Dosepix readout chip. Dosepix has 256 square pixels of 220 mm side-length, constituting 12.4 mm2 of photo-sensitive area per detector. The combination of multiple pixels provides many parallel processors with limited input flux, resulting in a radiation dose monitor which can continuously record data and provide a real-time report on personal dose equivalent. Energy measurements are obtained by measuring the time over threshold of each photon and a state machine in the pixel sorts the detected photon event into appropriate energy bins. Each pixel contains 16 digital thresholds with 16 registers to store the associated energy bins. Preliminary measurements of Dosepix chips bump bonded to silicon sensors show very promising results. The pixel has a frontend noise of 120 e-. In low power mode, each chip consumes 15 mW, permitting its use in a portable, battery-powered system. Direct time over threshold output from the hybrid pixel detector assembly reveal distinctive photo-peaks correctly identifying the nature of incident photons, and verification measurements indicate that the pixel binning state machines accurately categorise charge spectra. Personal dose equivalent reconstruction using this data has a flat response for a large range of photon energies and personal dose equivalent rates.

Over the last four decades the integrated circuit industry has evolved in a tremendous pace. This success has been driven by the scaling of device sizes leading to higher and higher integration capability, which have enabled more functionality and higher performance. The impressive evolution of modern high-performance microprocessors have resulted in chips with over a billion transistors as well as multi-GHz clock frequencies. As the silicon integrated circuit industry moves further into the nanometer regime, scaling of device sizes is still predicted to continue at least into the near future. However, there are a number of challenges to overcome to be able to continue the increase of integration at the same pace. Three of the major challenges are increasing power dissipation due to clocking of synchronous circuit, increasing leakage currents causing growing static power dissipation and reduced circuit robustness, and finally increasing spread in circuit parameters due to physical limitations in the manufacturing process. This thesis presents a number of circuit techniques that aims to help in all three of the mentioned challenges.Power dissipation related to the clock generation and distribution is identified as the dominating contributor of the total active power dissipation for multi-GHz systems. As the complexity and size of synchronous systems continues to increase, clock power will also increase. This makes novel power reduction techniques absolutely crucial in future VLSI design. In this thesis an energy recovering clocking technique aimed at reducing the total chip clock power is presented. Based on theoretical analysis the technique is shown to enable considerable clock power savings. Moreover, the impact of the proposed technique on conventional flip-flop topologies is studied. Measurements on an experimental chip design proves the technique, and shows more than 56% lower clock power compared to conventional clock distribution techniques at clock frequencies up to 1.76 GHz.Static leakage power dissipation is a considerable contributor to the total power dissipation. This power is dissipated even for circuits that are idle and not contributing to the operation. Hence, with increasing number of transistors on each chip, circuit techniques which reduce the static leakage currents are necessary. In this thesis a technique is discussed which reduces the static leakage current in a microcode ROM resulting in 30% reduction of the leakage power with no area or performance penalty.Apart from increasing static power dissipation the increasing leakage currents also impact the robustness constraints of the circuits. This is important for regenerative circuits like flip-flops and latches where a changed state due to leakage will lead to loss of functionality. This is a serious issue especially for high-performance dynamic circuits, which are attractive in order to limit the clock load in the design. However, with the increasing leakage the robustness of dynamic circuits reduces dramatically. To improve the leakage robustness for sub-90 nm low clock load dynamic flip-flops, a novel keeper technique is proposed. The proposed keeper utilizes a scalable and simple leakage compensation technique, which is implemented on a reconfigurable flip-flop. At normal clock frequencies the flip-flop is configured in dynamic mode, and reduces the clock power by 25% due to the lower clock load. During any low-frequency operation, the flip-flop is configured as a static flip-flop retaining full functional robustness.As scaling continues further towards the fundamental atomistic limits, several challenges arise for continuing industrial device integration. Large inaccuracies in lithography process, impurities in manufacturing, and reduced control of dopant levels during implantation all cause increasing statistical spread of performance, power, and robustness of the devices. In order to compensate the impact of the increasingly large process variations on latches and flip-flops, a reconfigurable keeper technique is presented in this thesis. In contrast to the traditional design for worst-case process corners, a variable keeper circuit is utilized. The proposed reconfigurable keeper preserves the robustness of storage nodes across the process corners without degrading the overall chip performance.

The power consumption in commercial processors and application specific integrated circuits increases with decreasing technology nodes. Power saving techniques have become a first class design point for current and future VLSI systems. These systems employ large on-chip SRAM memories. Reducing memory leakage power while maintaining data integrity is a key criterion for modern day systems. Unfortunately, state of the art techniques like power-gating can only be applied to logic as these would destroy the contents of the memory if applied to a SRAM system. Fortunately, previous works have noted large temporal and spatial locality for data patterns in commerical processors as well as application specific ICs that work on images, audio and video data. This thesis presents a novel column based Energy Compression technique that saves SRAM power by selectively turning off cells based on a data pattern. This technique is applied to study the power savings in application specific inegrated circuit SRAM memories and can also be applied for commercial processors. The thesis also evaluates the effects of processing images before storage and data cluster patterns for optimizing power savings.

The scaling of silicon technology has been ongoing for over forty years. We are on the way to commercializing devices having a minimum feature size of one-tenth of a micron. The push for miniaturization comes from the demand for higher functionality and higher performance at a lower cost. As a result, successively higher levels of integration have been driving up the power consumption of chips. Today, heat removal and power distribution are at the forefront of the problems faced by chip designers.In recent years portability has become important. Historically, portable applications were characterized by low throughput requirements such as for a wristwatch. This is no longer true.Among the new portable applications are hand-held multimedia terminals with video display and capture, audio reproduction and capture, voice recognition, and handwriting recognition capabilities. These capabilities call for a tremendous amount of computational capacity. This computational capacity has to be realized with very low power requirements in order for the battery to have a satisfactory life span. This thesis is an attempt to provide microarchitecture and compiler techniques for low-power chips with high-computational capacity.The first part of this work presents some schemes for reducing the complexity of the issue logic. The issue logic has become one of the main sources of energy consumption in recent years. The inherent associative look-up and the size of the structures (crucial for exploiting ILP), have led the issue logic to a significant energy budget. The techniques presented in this work eliminate or reduce the associative logic by determining producer-consumer relationships between the instructions or by scheduling the instructions according to the latency of the operations.An important effort has been deployed to reduce the energy requirements and the power dissipation through novel mechanisms based on value compression. As a result, the second part of this thesis introduces several ultra-low power and high-end processor designs. First, the design space for ultra-low power processors is explored. Several designs are developed (at the architectural level) from scratch that exploit value compression at all levels of the data-path. Second, value compression for high-performance processors is proposed and evaluated. At the end of this thesis, two compile-time techniques are presented that show how the compiler can help in reducing the energy consumption. By means of a static analysis of the program code or through profiling, the compiler is able to know the size of the operands involved in the computation. Through these analyses, the compiler is able to use narrower operations (i.e. a 64-bit addition can be converted to an 8-bit addition due to the information of the size of the operands).Overall, this thesis compromises the detailed study of one of the most power hungry units in a processor (the issue logic) and the use of value compression (through hardware and software) as a mean to reduce the energy consumption in all the stages of the pipeline.

Ternary content addressable memories (TCAMs) are hardware-based parallel lookup tables with bit-level masking capability. They are attractive for applications such as packet forwarding and classification in network routers. Despite the attractive features of TCAMs, high power consumption is one of the most critical challenges faced by TCAM designers. This work proposes circuit techniques for reducing TCAM power consumption. The main contribution of this work is divided in two parts: (i) reduction in match line (ML) sensing energy, and (ii) static-power reduction techniques. The ML sensing energy is reduced by employing (i) positive-feedback ML sense amplifiers (MLSAs), (ii) low-capacitance comparison logic, and (iii) low-power ML-segmentation techniques. The positive-feedback MLSAs include both resistive and active feedback to reduce the ML sensing energy. A body-bias technique can further improve the feedback action at the expense of additional area and ML capacitance. The measurement results of the active-feedback MLSA show 50-56% reduction in ML sensing energy. The measurement results of the proposed low-capacitance comparison logic show 25% and 42% reductions in ML sensing energy and time, respectively, which can further be improved by careful layout. The low-power ML-segmentation techniques include dual ML TCAM and charge-shared ML. Simulation results of the dual ML TCAM that connects two sides of the comparison logic to two ML segments for sequential sensing show 43% power savings for a small (4%) trade-off in the search speed. The charge-shared ML scheme achieves power savings by partial recycling of the charge stored in the first ML segment. Chip measurement results show that the charge-shared ML scheme results in 11% and 9% reductions in ML sensing time and energy, respectively, which can be improved to 19-25% by using a digitally controlled charge sharing time-window and a slightly modified MLSA. The static power reduction is achieved by a dual-VDD technique and low-leakage TCAM cells. The dual-VDD technique trades-off the excess noise margin of MLSA for smaller cell leakage by applying a smaller VDD to TCAM cells and a larger VDD to the peripheral circuits. The low-leakage TCAM cells trade off the speed of READ and WRITE operations for smaller cell area and leakage. Finally, design and testing of a complete TCAM chip are presented, and compared with other published designs.

Aggressive scaling of CMOS technology in sub-90nm nodes has created huge challenges. Variations due to fundamental physical limits, such as random dopants fluctuation (RDF) and line edge roughness (LER) are increasing significantly with technology scaling. In addition, manufacturing tolerances in process technology are not scaling at the same pace as transistor's channel length due to process control limitations (e.g., sub-wavelength lithography). Therefore, within-die process variations worsen with successive technology generations. These variations have a strong impact on the maximum clock frequency and leakage power for any digital circuit, and can also result in functional yield losses in variation-sensitive digital circuits (such as SRAM). Moreover, in nanometer technologies, digital circuits show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost while achieving higher performance and density. It is therefore not surprising that the International Technology Roadmap for Semiconductors (ITRS) lists variability as one of the most challenging obstacles for IC design in nanometer regime. To facilitate variation-tolerant design, we study the impact of random variations on the delay variability of a logic gate and derive simple and scalable statistical models to evaluate delay variations in the presence of within-die variations. This work provides new design insight and highlights the importance of accounting for the effect of input slew on delay variations, especially at lower supply voltages. The derived models are simple, scalable, bias dependent and only require the knowledge of easily measurable parameters. This makes them useful in early design exploration, circuit/architecture optimization as well as technology prediction (especially in low-power and low-voltage operation). The derived models are verified using Monte Carlo SPICE simulations using industrial 90nm technology. Random variations in nanometer technologies are considered one of the largest design considerations. This is especially true for SRAM, due to the large variations in bitcell characteristics. Typically, SRAM bitcells have the smallest device sizes on a chip. Therefore, they show the largest sensitivity to different sources of variations. With the drastic increase in memory densities, lower supply voltages and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. In this research, we present a methodology for statistical simulation of SRAM read access yield, which is tightly related to SRAM performance and power consumption. The proposed flow accounts for the impact of bitcell read current variation, sense amplifier offset distribution, timing window variation and leakage variation on functional yield. The methodology overcomes the pessimism existing in conventional worst-case design techniques that are used in SRAM design. The proposed statistical yield estimation methodology allows early yield prediction in the design cycle, which can be used to trade off performance and power requirements for SRAM. The methodology is verified using measured silicon yield data from a 1Mb memory fabricated in an industrial 45nm technology. Embedded SRAM dominates modern SoCs and there is a strong demand for SRAM with lower power consumption while achieving high performance and high density. However, in the presence of large process variations, SRAMs are expected to consume larger power to ensure correct read operation and meet yield targets. We propose a new architecture that significantly reduces array switching power for SRAM. The proposed architecture combines built-in self-test (BIST) and digitally controlled delay elements to reduce the wordline pulse width for memories while ensuring correct read operation; hence, reducing switching power. A new statistical simulation flow was developed to evaluate the power savings for the proposed architecture. Monte Carlo simulations using a 1Mb SRAM macro from an industrial 45nm technology was used to examine the power reduction achieved by the system. The proposed architecture can reduce the array switching power significantly and shows large power saving - especially as the chip level memory density increases. For a 48Mb memory density, a 27% reduction in array switching power can be achieved for a read access yield target of 95%. In addition, the proposed system can provide larger power saving as process variations increase, which makes it a very attractive solution for 45nm and below technologies. In addition to its impact on bitcell read current, the increase of local variations in nanometer technologies strongly affect SRAM cell stability. In this research, we propose a novel single supply voltage read assist technique to improve SRAM static noise margin (SNM). The proposed technique allows precharging different parts of the bitlines to VDD and GND and uses charge sharing to precisely control the bitline voltage, which improves the bitcell stability. In addition to improving SNM, the proposed technique also reduces memory access time. Moreover, it only requires one supply voltage, hence, eliminates the need of large area voltage shifters. The proposed technique has been implemented in the design of a 512kb memory fabricated in 45nm technology. Results show improvements in SNM and read operation window which confirms the effectiveness and robustness of this technique.

This master thesis deals with the study of ultra low power Low Noise Amplifier (LNA) for use inmedical implant device. Usually, low power consumption is required for a long battery lifetime andlonger operation. The target technology is 90nm CMOS process.First basic principle of LNA is discussed. Then based on a literature review of LNA design, theproposed LNA is presented in sub-threshold region which reduce power consumption through scalingthe supply voltage and through scaling current.The circuit implementation and simulations is presented to testify the performance of LNA .Besides thepower consumption simulated under the typical supply voltage (1V), it is also measured under someother low supply voltages (down to 0.5V) to investigate the minimum power consumption and theminimum noise figure. Evaluation results show that at a supply voltage of 1V the LNA performs a totalpower consumption of 20mW and a noise of 1dB. Proper performance is achieved with a current ofdown to 200uA and supply voltage of down to 0.45V, and a total power consumption of 200uW