This work is dedicated to the study of spin dynamics in systems based on the semiconductor gallium arsenide (GaAs) that are suitable for use in spintronic devices. We explored two types of model structures using experimental methods of ultrafast laser spectroscopy and transport measurements. In the ferromagnetic semiconductor (Ga,Mn)As, we investigated laser-induced magnetization precession. We found out that transfer of both energy and angular momentum from the circularly polarized laser light can trigger magnetization precession, the latter one being identified as a new phenomenon, the "optical spin transfer torque". Furthermore, we demonstrate the possibility to control the energy-transfer-induced magnetization dynamics both optically and electrically using piezo-stressing. When dealing with purely non-magnetic structures for spintronics, we studied the Spin-Injection Hall Effect (SIHE) in GaAs/AlGaAs heterostructures with a special type of spin- orbit (SO) coupling that are lithographically patterned to create nanodevices. We managed to observe precession of the electron spin in the SO field directly in the space domain by extending the original detection method. This finding, together with the direct detection of a pure spin current, helped to propose a working spin Hall effect transistor.

Os calcógenos de európio (EuX, onde X representa O, S, Se ou Te) possuem propriedades magneto-ópticas únicas e interessantes, devido ao enorme magnetismo gerado dos elétrons na camada f do átomo pertencente a família dos terras raras, tornando estes materiais atraentes para aplicações na spintrônica (eletrônica baseada nos transporte de spins e não de carga). Neste trabalho investigamos em baixa temperatura o espectro de absorção utilizando luz circularmente polarizada na região próxima do limiar da banda para o telureto de európio EuTe e o seleneto de európio EuSe em alto campo magnético no ordenamento ferromagnético dos spins de Eu^{2+} da rede cristalina. As amostras crescidas por epitaxia por feixe molecular apresentaram um dicroísmo circular magnético intenso no espectro de absorção para a configuração de Faraday. O par de linhas estreitas observadas estão separadas de aproximadamente 200 meV para o EuTe e 300 meV para o EuSe. Em seguida, formulamos um modelo teórico para a interpretação deste espectro de absorção no arcabouço do modelo de transições eletrônicas entre o estado fundamental 4f^{7}({8}^S_{7/2}) e o estado excitado formado dos estados do caroço remanescente 4f^{6}({7}^F_{J=0...6}) mais o estado em que o elétron se encontra na banda de condução 5d(t_{2g}), resultando em uma excelente concordancia qualitativa e quantitativa com o experimento. / Europium chalcogenides (EuX, where X stands for O, S, Se or Te) have very interesting and unique magneto-optical properties, due to the huge magnetism that arises from the electrons in the f?shell of the rare earth element and which makes them attractive for spintronics applications ( spin transport electronics or spin basedelectronics) In this work we investigate the band-edge optical absorption in high magnetic fields in the Faraday geometry for EuTe and EuSe in the ferromagnetic order attained at low temperatures. In thin layers grown by molecular beam epitaxy, an intense magnetic circular dichroism were observed. The doublet of absorption lines showed a separation by about 200meV in EuTe and 300meV in EuSe. Next, we developed a theoretical model for the interpretation of the absorption spectrum, based in the framework of the model of an electronic transition from a localized ground state 4f^{7}({8}^S_{7/2)) to an excited state formed by the core states 4f^{6}({7}^F_{J=0...6}) and the electron extended state in the 5d(t_{2g}) conduction band, yielding an excellent qualitative and quantitavie agreement with experiment.

This work presents the development of a GaN-based dilute magnetic semiconductor (DMS) by metal organic chemical vapor deposition (MOCVD) that is ferromagnetic at room temperature (RT), electrically conductive, and possesses magnetic properties that can be tuned by n- and p-doping. The transition metal series (TM: Cr, Mn, and Fe) along with the rare earth (RE) element, Gd, was investigated in this work as the magnetic ion source for the DMS. Single- phase and strain-free GaTMN films were obtained. Optical measurements revealed that Mn is a deep acceptor in GaN, while Hall measurements showed that these GaTMN films were semi-insulating, making carrier mediated exchange unlikely. Hysteresis curves were obtained for all the GaTMN films, and by analyzing the effect of n- and p-dopants on the magnetic properties of these films it was determined that the magnetization is due to magnetic clusters. These findings are supported by the investigation of the effect of TM dopants in GaN nanostructures which reveal that TMs enhance nucleation resulting in superparamagnetic nanostructures. Additionally, this work presents the first report on the development of GaGdN by MOCVD providing an alternate route to developing a RT DMS. Room temperature magnetization results revealed that the magnetization strength increases with Gd concentration and can be enhanced by n- and p-doping, with holes being more efficient at stabilizing the ferromagnetic signal. The GaGdN films obtained in this work are single-phase, unstrained, and conductive making them suitable for the development of multifunctional devices that integrate electrical, optical, and magnetic properties.

Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors question the origin of this ferromagnetism, i.e. if the observed ferromagnetism stems from ferromagnetic precipitates rather than from carriermediated magnetic coupling of ionic impurities, as required for a diluted magnetic semiconductor. In this thesis, this question will be answered for transition-metal implanted ZnO single crystals. Magnetic secondary phases, namely metallic Fe, Co and Ni nanocrystals, are formed inside ZnO. They are - although difficult to detect by common approaches of structural analysis - responsible for the observed ferromagnetism. Particularly Co and Ni nanocrystals are crystallographically oriented with respect to the ZnO matrix. Their structure phase transformation and corresponding evolution of magnetic properties upon annealing have been established. Finally, an approach, pre-annealing ZnO crystals at high temperature before implantation, has been demonstrated to sufficiently suppress the formation of metallic secondary phases.

Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors question the origin of this ferromagnetism, i.e. if the observed ferromagnetism stems from ferromagnetic precipitates rather than from carriermediated magnetic coupling of ionic impurities, as required for a diluted magnetic semiconductor. In this thesis, this question will be answered for transition-metal implanted ZnO single crystals. Magnetic secondary phases, namely metallic Fe, Co and Ni nanocrystals, are formed inside ZnO. They are - although difficult to detect by common approaches of structural analysis - responsible for the observed ferromagnetism. Particularly Co and Ni nanocrystals are crystallographically oriented with respect to the ZnO matrix. Their structure phase transformation and corresponding evolution of magnetic properties upon annealing have been established. Finally, an approach, pre-annealing ZnO crystals at high temperature before implantation, has been demonstrated to sufficiently suppress the formation of metallic secondary phases.

Neste trabalho e apresentado um estudo, via teoria de massa efetiva multibanda autoconsistente de heteroestruturas de semicondutores magnéticos diluídos, generalizada para incluir parâmetros de diferentes materiais. A interacao magnética e descrita por um modelo de campo médio baseado no mecanismo de troca indireta, com a possibilidade de inclusão de diferentes íons magnéticos. As equacoes de massa efetiva são resolvidas de forma autoconsistente com o auxílio da equacao de Poisson. As interacoes de spin-órbita e de troca-correlacao, na aproximacao de densidade local, são incluídas no cálculo. O método e aplicado para o estudo das estruturas de bandas e densidades de carga com separacao por spin do portador de heteroestruturas com dopagem tipo-n e tipo-p, variando a geometria dos pocos magnéticos e também o período da super-rede, as densidades de portadores e as concentracoes de íons magnéticos. Solucoes autoconsistentes da equacao de massa efetiva são encontradas para o oxido semicondutor (Zn,Co)O. Será mostrada a separacao de portadores por spin em funcao dos parâmetros variados, simulando diversas concentracoes possíveis, utilizadas em sistemas descritos na literatura, e será analisado o comportamento dos perfis de potencial. Usando os dados obtidos, um diagrama de fases será traçado com base na polarizacao total ou parcial dos portadores, e o seu comportamento será discutido. Também serão mostradas as estruturas de bandas, os perfis de potencial e as distribuicoes de carga do semicondutor (GaMn)As, variando as densidades de portadores e a direcao do campo magnético intrínseco, gerado pela dopagem com íons magnéticos. Os resultados obtidos neste trabalho podem servir de guia para futuras experiências e para o desenvolvimento de dispositivos com semicondutores magnéticos diluídos baseados em (Zn,Co)O e (Ga,Mn)As. Os métodos aqui descritos são gerais e podem ser utilizados para outros materiais. / This work presents a self-consistent multiband effective mass theory applied to diluted magnetic semiconductor heterostructures, generalized to include parameters of different ma- terials. The magnetic interaction is described by a mean-field approximation based on indirect- exchange mecanism, with the possibility of inclusion of different magnetic ions. The effective mass equations are solved self-consistently with the help of the Poisson equation. Spin-orbit and exchange-correlation interactions are included in the simulation in the local density appro- ximation. The method is used to study band structures and charge densities separated by spin in n- and p-type heterostructures. The magnetic well\'s geometry, the superlattice period, the carrier density and the magnetic ion concentration are changed. Self-consistent solutions of the effective mass equation are found for the semiconductor oxide (Zn,Co)O. Charge separation by spin will be show in function of the variation of the simulation parameters, simulating several ion concentrations and charge densities used in systems described in literature, and the potenti- als profiles will be analised. Using the data obtained a phase diagram will be plotted, based on the carrier total or partial carrier polarization, and a model for the behavior of the phase diagram will be discussed. It will also be shown band structures, potential profiles and charge densities of the (Ga,Mn)As semiconductor, varying it carrier density and the direction of the intrinsic magnetic field, generated by the magnetic ions that doped the heterostructure. The results ob- tained in this work can be used as a guide in future experiences and development of devices with diluted magnetic semiconductors based on (Zn,Co)O and (Ga,Mn)As. The methods here described are general and can be used for other materials.

Neste trabalho investigamos pela primeira vez flutuações dependentes de spin em correntes eletrônicas polarizadas através de estruturas magnéticas. Nosso sistema físico consiste de uma heteroestrutura com tunelamento ressonante formada por um poço ou \"ponto\" quântico contendo Mn, confinado entre duas barreiras de potencial. Usamos um modelo semiclássico baseado em equações de taxa para calcular as ocupações dos estados ressonantes up e down. Estas equações são derivadas de uma equação mestra que descreve a probabilidade de ocupação dos estados de spin em um dado tempo. Funções correlação corrente-corrente são expressas em termos das funções correlação hop-hop (associadas à transições entre os níveis ressonantes up e down) e o shot noise dependente de spin é determinado em termos da matriz variância do sistema, também derivada da equação mestra. Quando consideramos um feixe polarizado e tempos distintos (&#964 &#8593 &#8595 &#8800 &#964 &#8595 &#8593), podemos obter ambas \"correlações positivas\" (&#8249 &#916 &#8593 &#916 &#8595 &#8250 &#8805 0) e/ou \"negativas\" (&#8249 &#916 &#8593 &#916 &#8595 &#8250 &#8804 0) no nosso modelo. A generalização e reinterpretação do modelo de ilhas nos possibilitou (i) investigar flutuações dependentes de spin em correntes polarizadas; (ii) observar aumento e atenuação do shot noise; (iii) verificar que processos de \"spin-flip\" com (&#964 &#8593 &#8595 &#8800 &#964 &#8595 &#8593) são relevantes na atenuação do shot noise e (iv) verificar que o ruído contém informações sobre o processo de \"spin-flip\" / In this work we investigate for the first time spin-dependent fluctuations in spin-polarized electronic currents through magnetic structures. Our physical model consists of a resonant-tunneling heterostructure formed by a Mn-based quantum well or \"point\", confined between a double-barrier potential. We used a semiclassical model based on rate equations to calculate the occupations of the spin-up and spindown resonant states. These equations are derived from a master equation describing the probability of occupation of the spin states at a given time. Current-current correlation functions are expressed in terms of hop-hop correlation functions (for hops between islands representing the up and down states) and the spin-dependent shoi noise is determined in terms of the variance matrix of the system; also derived from the master equation. When we consider a polarized beam and distinctive times (&#964 &#8593 &#8595 &#8800 &#964 &#8595 &#8593), we can obtain both \"positive correlations\" (&#8249 &#916 &#8593 &#916 &#8595 &#8250 &#8805 0) and \"negative correlations\" (&#8249 &#916 &#8593 &#916 &#8595 &#8250 &#8804 0) in our model. The generalization and reinterpretation of the island model allowed us (i) to investigate spin-dependent fluctuations in spinpolarized electronic currents; (ii) to observe enhancement and suppression of shot noise; (iii) to verify that spin-flip processes with (&#964 &#8593 &#8595 &#8800 &#964 &#8595 &#8593) are relevant to shotnoise suppression and (iv) to verify that noise contains information about spin-flip processes

Materials exhibiting new functionalities due to interdependent electric (e.g. conductivity) and magnetic properties are potentially interesting for spintronics applications. We have investigated electronic and magnetic properties by means of x-ray spectroscopies and SQUID magnetometry in several magnetic materials, often in the form of thin films, which have shown promising properties for applications. One of the main subjects has been studies of inter-diffusion between layers in multilayer structures, which is an important factor for spin-dependent transport and magnetic properties. These studies have been performed by high kinetic (HIKE) photoemission spectroscopy where high photon energies increase the bulk sensitivity in comparison to soft x-ray photoemission spectroscopy. Cu/Ni multilayers were studied mainly as a model system and revealed a diffusion process that was dependent on layer thicknesses and capping materials. CoFeB/MgO/CoFeB, which is used as a magnetic field sensor in hard drives, has recently been shown to exhibit a perpendicular magnetic anisotropy (PMA) switchable by electric fields. We have studied both the interface quality and magnetic properties of thin CoFeB layers exhibiting PMA. Layered structures of full Heusler alloys Co2MnGe/Rh2CuSn have been proposed as a promising candidate for current-perpendicular-to-plane giant magneto-resistance sensors. Using HIKE,we have shown that diffusion of atoms, mainly Mn, occurs at temperatures lower than what is used in device fabrication, which likely contributes to the limited magneto-resistance values obtained. Lately, a large body of research has been performed on semiconductors doped with transition metal elements with the hope to find a ferromagnetic semiconductor at room temperature, a foundation for new devices combining spin and charge in their functionality. We have investigated Co and Fe doping in ZnO for different concentrations of the dopants and different annealing temperatures. The Co and Fe atoms are shown to forms clusters for which antiferromagnetic interactions are dominating.

Thesis (Ph. D.)--Florida State University, 2003. / Advisor: Dr. Peng Xiong, Florida State University, College of Arts and Sciences, Dept. of Physics. Title and description from dissertation home page (viewed Apr. 9, 2004). Includes bibliographical references.

Submitted by Maria Medeiros (maria.dilva1@ufcg.edu.br) on 2018-06-25T21:09:22Z No. of bitstreams: 1 LUCIUS VINICIUS ROCHA MACHADO -TESE (PPGCEMat) 2015.pdf: 3378243 bytes, checksum: 8988e719f1f296de2f74c587ed4f5ba8 (MD5) / Made available in DSpace on 2018-06-25T21:09:22Z (GMT). No. of bitstreams: 1 LUCIUS VINICIUS ROCHA MACHADO -TESE (PPGCEMat) 2015.pdf: 3378243 bytes, checksum: 8988e719f1f296de2f74c587ed4f5ba8 (MD5) Previous issue date: 2015-12-18 / Esse trabalho teve como objetivo, avaliar a influência do tipo de precursor, fonte de íons de ferro, e sua concentração na dopagem do sistema Zn1-xFexO de modo a se obter um produto com ferrimagnetismo a temperatura ambiente para uso como semicondutor magnético diluído. Para esse fim, inicialmente avaliou-se a influência do tipo de precursor (nitrato de ferro III, sulfato de ferro II e acetato de ferro II) sobre a estrutura, morfologia, propriedades térmicas e magnéticas do sistema Zn1-xFexO com concentração de íons de Fe2+ e Fe3+ de 0,4 mol. Posteriormente avaliou-se o efeito da concentração de íons de ferro III variando de 0,05 a 0,4 mol sobre a estrutura e magnetismo do sistema Zn1- xFexO. Durante as reações para obtenção do produto foram feitas medições de temperatura e do tempo de reação. As amostras foram caracterizadas por: difração de raios X, análise química por fluorescência de raios X por energia dispersiva, microscopia eletrônica de varredura com mapeamento por EDS, distribuição granulométrica, análise por adsorção de nitrogênio, magnetometria de amostra vibrante e análise termogravimétrica. Os resultados mostraram que o tipo de precursor influenciou diretamente na estrutura, morfologia e magnetismos das amostras, sendo o precursor nitrato de ferro III o que possibilitou à formação de um material ferrimagnético a temperatura ambiente. Para as amostras dopadas, os espectros de DRX mostraram que até a concentração de 0,20 mol de íons ferro III resultou num sistema monofásico com comportamento ferrimagnético à temperatura ambiente, o que caracterizou a formação de um semicondutor magnético diluído. Para demais concentrações foi observado traços da fase FeFe2O4 e que às interações de troca entre os íons Fe - Fe e possivelmente o aumento da concentração de vacância de oxigênio na rede do ZnO suprimiu o comportamento ferrimagnético pela competição do comportamento ferrimagnético/paramagnético. Portanto, pode-se concluir que o precursor nitrato de ferro III com concentração de até 0,20 mol foi a melhor condição para obtenção de produto com característica para uso como semicondutor magnético diluído usando a técnica de síntese por reação de combustão. / The objective of this study is to evaluate the influence the type of precursor, source of iron ions, and its concentration in the doping Zn1-xFexO system in order to obtain a product with ferromagnetism at room temperature for use as magnetic semiconductor diluted. For this purpose, it was firstly evaluated the influence of the type of precursor (iron III nitrate, iron sulfate II, iron acetate II) on the structure, morphology, thermal and magnetic properties of Zn1-xFexO system concentration of Fe2+ and Fe3+ ions of 0.4 mol. After that, it was evaluated the effect of concentration of iron III ions ranging from 0.05 to 0.4 mol on the structure and magnetism of Zn1-xFexO system. During the reactions, there were made measurements of temperature and time. The samples were characterized by: X-ray diffraction, chemical analysis by fluorescence X-ray energy dispersive, scanning electron microscopy, with mapping by EDS, particle size analysis, analysis by nitrogen adsorption, vibrating sample magnetometer and thermal gravimetric analysis. The results have shown that the type of precursor influenced directly the structure, morphology and magnetism of the samples and the precursor of iron nitrate III was the one which favored the obtention of the ferromagnetism material monophasic at room temperature. For the doped samples, the XRD spectra showed that the concentrations until 0.20 mol of iron III ions resulted in a monophasic system with ferromagnetic behavior at room temperature, which characterized the formation of a diluted magnetic semiconductor. For the other concentrations, it was observed traces of MnFe2O4 phase and that the exchange interactions between the ionsFe - Fe and possibly the increasing of oxygen vacancy concentration in ZnO network suppressed the ferromagnetic behavior by the competition of ferromagnetic / paramagnetic one. Therefore, it can be concluded that the precursor of iron III nitrate concentration to 0.20 mol was the best condition for obtaining a product with characteristics for use as a dilute magnetic semiconductor using the synthetic technique by combustion.