Doctorat en sciences psychologiques / info:eu-repo/semantics/nonPublished

This work deals with COMBO2 card interconnect and memory devices testing. In the beginning of the paper, some existing testing algorithms for interconnect and RAM memories testing are introduced. This work is devoted to proposal of generic architecture for interconnect and memory devices testing. The proposed architecture is optimized for FPGA implementation.

The purpose of this study was to confirm the original factor structure of the Wide Range Assessment of Memory and Learning (WRAML) utilizing a non-clinical adolescent population. Additional analysis examined the relationship between SAT-M scores and spatial relations ability. Exploratory analyses were conducted to determine ethnic and gender differences on the WRAML and subtests from the DAT. Sixty-four academically talented adolescents completed the WRAML and the mechanical reasoning and spatial relations subtests from the Differential Aptitude Test (DAT). The confirmatory factor analysis found the data obtained to not be a good fit for the factor structure of the WRAML (Sheslow & Adams, 1990). Additional confirmatory analyses were conducted which examined data fit of a three factor model found by reanalyzing the standardization data (Burton et al., 1996; Wasserman & Cambias, 1991) as well as two null models. The data failed to fit any of these three models. No support was found for the second hypothesis that predicted a positive relationship between SAT-M scores and spatial relations ability. Ethnic and gender differences on the WRAML and two DAT subtests were examined and discussed. Limitations of this study were reviewed which may have accounted for the overall lack of results.

De nos jours, les mémoires embarquées sont les composants les plus denses dans les "System-On-Chips" (SOCs), représentant actuellement plus que 90% de leur superficie totale. Parmi les différents types de mémoires, les SRAMs sont très largement utilisées dans la conception des SOCs, particulièrement en raison de leur haute performance et haute densité d'intégration. En revanche, les SRAMs conçues en utilisant des technologies submicroniques sont devenus les principaux contributeurs de la consommation d'énergie globale des SOCs. Par conséquent, un effort élevé est actuellement consacré à la conception des SRAMs à faible consommation. En plus, en raison de leur structure dense, les SRAMs sont devenus de plus en plus susceptibles aux défauts physiques comparativement aux autres blocs du circuit, notamment dans les technologies les plus récentes. Par conséquent, les SRAMs se posent actuellement comme le principal détracteur du rendement des SOCs, ce qui cause la nécessité de développer des solutions de test efficaces ciblant ces dispositifs.Dans cette thèse, des simulations électriques ont été réalisées pour prédire les comportements fautifs causés par des défauts réalistes affectant les blocs de circuits spécifiques aux technologies SRAM faible consommation. Selon les comportements fautifs identifiés, différents tests fonctionnels, ainsi que des solutions de tests matériels, ont été proposés pour détecter les défauts étudiés. Par ailleurs, ce travail démontre que les circuits d'écriture et lecture, couramment incorporés dans les SRAMs faible consommation, peuvent être réutilisés pour augmenter le stress dans les SRAMs lors du test, ce qui permet d'améliorer la détection des défauts affectant la mémoire. / Nowadays, embedded memories are the densest components within System-On-Chips (SOCs), accounting for more than 90% of the overall SOC area. Among different types of memories, SRAMs are still widely used for realizing complex SOCs, especially because they allow high access performance, high density and fast integration in CMOS designs. On the other hand, high density SRAMs designed with deep-submicrometer technologies have become the main contributor to the overall SOC power consumption. Hence, there is an increasing need to design low-power SRAMs, which embed mechanisms to reduce their power consumption. Moreover, due to their dense structure, SRAMs are more are more prone to defects compared to other circuit blocks, especially in recent technologies. Hence, SRAMs are arising as the main SOC yield detractor, which raises the need to develop efficient test solutions targeting such devices.In this thesis, failure analysis based on electrical simulations has been exploited to predict faulty behaviors caused by realistic defects affecting circuit blocks that are specific to low-power SRAMs, such as power gating mechanisms and voltage regulation systems. Based on identified faulty behaviors, efficient March tests and low area overhead design for testability schemes have been proposed to detect studied defects. Moreover, the reuse of read and write assist circuits, which are commonly embedded in low-power SRAMs, has been evaluated as an alternative to increase stress in the SRAM during test phase and then improve the defect coverage.

Yim-chi Ho. / "Running head: Effects of music training on memory of children." / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 51-65). / Abstracts in English and Chinese. / ABSTRACT (English Version) --- p.ii / ABSTRACT (Chinese Version) --- p.iii / ACKNOWLEDGEMENTS --- p.iv / TABLE OF CONTENTS --- p.v / LIST OF TABLES --- p.vi / LIST OF FIGURES --- p.vii / Chapter CHAPTER I - --- INTRODUCTION --- p.1 / Chapter CHAPTER II - --- METHOD --- p.13 / Chapter CHAPTER III - --- RESULTS --- p.19 / Chapter CHAPTER IV - --- DISCUSSION --- p.42 / REFERENCES --- p.51

Indiana University-Purdue University Indianapolis (IUPUI) / The time course and biological mechanisms by which breast cancer (BC) and/or alterations in estrogen status lead to cognitive and brain changes remain unclear. The studies presented here use neuroimaging, cognitive testing, genetics, and biomarkers to investigate how post-chemotherapy interval (PCI), chemotherapy-induced amenorrhea (CIA), and genetic variation in the estrogen pathway affect the brain. Chapter 1 examines the association of post-chemotherapy interval (PCI) with gray matter density (GMD) and working memory-related brain activation in BC survivors (mean PCI 6.4, range 3-10 years). PCI was positively associated with GMD and activation in the right frontal lobe, and GMD in this region was correlated with global neuropsychological function. In regions where BC survivors showed decreased GMD compared to controls, this was inversely related to oxidative DNA damage and learning and memory scores. This is the first study to show neural effects of PCI and relate DNA damage to brain alterations in BC survivors. Chapter 2 demonstrates prospectively, in an independent cohort, decreased combined magnitudes of brain activation and deactivation from pre-to post-chemotherapy in patients undergoing CIA compared to both postmenopausal BC patients undergoing chemotherapy and healthy controls. CIA’s change in activity magnitude was strongly correlated with change in processing speed, suggesting this activity increase reflects effective cognitive compensation. These results demonstrate that the pattern of change in brain activity from pre- to post-chemotherapy varies according to pre-treatment menopausal status. Chapter 3 presents the effects of variation in ESR1, the gene that codes for estrogen receptor-α, on brain structure in healthy older adults. ESR1 variation was associated with hippocampus and amygdala volumes, particularly in females. Single nucleotide polymorphism (SNP) rs9340799 influenced cortical GMD and thickness differentially by gender. Apolipoprotein E (APOE)-ε4 carrier status modulated the effect of SNP rs2234693 on amygdala volumes in women. This study showed that genetic variation in estrogen relates to brain morphology in ways that differ by sex, brain region and APOE-ε4 carrier status. The three studies presented here explore the interplay of BC, estrogen, and cognition, showing that PCI, CIA, and ESR1 genotype influence brain phenotypes. Cognitive correlates of neuroimaging findings indicate potential clinical significance of these results.

The Wechsler Memory Scale –iii is the newest version of a six-decade old neuropsychological inventory. Since its conception, the Wechsler Memory Scale has been highly utilized by practitioners to accurately assess various memory functions in adult subjects. Revisions made within this inventory include the Faces I subtest, a facial recognition scale, which was added in order to strengthen the instrument’s accuracy at measuring episodic memory. Facial recognition, both cross-race and within-race, has been researched extensively and consistent biases have been found between race of test taker and cross-racial identification. Theories of exposure/contextual interaction (environment) and biological foundations have been the subject of study in the past in order to determine from where these racial identification deficits stem. The current study focuses on revealing bias in the Faces I subtest, regarding to an unequal distribution of racially representative faces in the testing materials. Eighty-eight college students were recruited to view forty-eight pictured faces from the Faces I subtest and determine the racial category to which the pictured face belonged. The subjects’ categorical responses were the basis for calculating a percent agreement score for racial category of each face. It was determined, using the results of subjects’ responses, that the Faces I subtest contained an unequal distribution of racially representative faces in both the Target and Interference testing material. This confirmed the presence of an inherent bias within the subscale. The implications of memory accuracy for the WMS-iii are discussed as it relates to different fields of study, but none more directly than the criminal justice system. Eyewitness testimony is a pivotal evidentiary tool in the criminal justice system, and ramifications of cross-racial identification deficits and biases in the tools to accurately assess memory are increasingly bringing this once heavily relied upon tool into question.

Indiana University-Purdue University Indianapolis (IUPUI) / The purpose of the current study was to investigate the impact of emotionality on the memory of children with an autism spectrum disorder. Although emotional events enhance memory in adults and children without an autism spectrum disorder, there are different memory patterns among individuals on the autism spectrum. Specifically, individuals with autism may show a decreased advantage in memory for emotional content and may have deficits in memory for information that is not presented visually. Currently, however, there are no studies that look at how emotional content affects memory specifically in children with autism. In the current study, children with and without autism were presented with stimuli contrasting emotional and neutral content using one of two modalities, auditory and visual, and then completed memory recognition tasks for the stimuli. Results indicate that children with an autism spectrum disorder did not demonstrate enhanced memory for emotional information. Rather, they were equally able to remember emotional and neutral stimuli. Additionally, individuals on the spectrum demonstrated better memory for visual stimuli compared to their neurotypical peers. These results support the notion that individuals with an autism spectrum disorder may learn and remember material differently than those without the disorder and that educators need to acknowledge these differences as children with autism spectrum disorders continue to be integrated into classroom settings.

Discusses the structure and topology of dynamic memory chips, the impact of the environment on the information storage process, ways to control and correct errors that occur during storage of data; in Matlab / Simulink, a model is constructed of dynamic memory cells in conditions close to the natural background radiation; a comparative analysis of noise immunity in the absence of storage and use of the Hamming code. / Рассматриваются структура и топология микросхем динамической памяти, влияние внешней среды на процесс хранения информации, способы контроля и исправления ошибок, возникающие при хранении данных; в среде Matlab/Simulink построена модель ячейки динамической памяти в условиях приближенных к естественному радиационному фону; проведен сравнительный анализ помехоустойчивости хранения данных при отсутствии и использовании кода Хемминга.