Modern phased array radars require large numbers of electronically controlled phase shifters to steer their beams to the desired direction. The amount of beam steering error depends on the phase resolution of the phase shifters as well as the performance of other parts of the antenna system. The size of the phase shifter in such systems is most of the time needed to be small, which necessitates the MMIC implementation. In the context of this thesis, an X band 7 bit MMIC phase shifter of 2.8125 degree phase resolution, including its layout, is designed using the design kit of OMMIC&reg / Foundry. All bits of the phase shifter are designed to have low return loss so as to minimize the performance egradation due to loading effects upon cascading. Also some structures studied using the design kit of WIN&reg / Foundry are presented. Both designs were performed using ADS&reg / . For the optimum cascading of 7 bits, a MATLAB code was written and used.

Ces travaux de recherche concernent les amplificateurs RF de puissance pour stations de base. La technologie actuelle de transistor RF la plus compétitive, le LDMOS, est confrontée à l’augmentation constante du débit et à la concurrence d’autres technologies comme le HEMT GaN. Un autre challenge est l’intégration de l’adaptation de sortie réalisée en dehors du boîtier qui n’est plus compatible avec les futurs standards combinant jusqu’à soixante-quatre amplificateurs de puissance proches les uns des autres.Une première piste envisagée dans cette thèse est le substrat Si à haute résistivité. A partir de simulations puis de mesures sur plaques, l’amélioration du facteur de qualité des éléments passifs a été démontrée mais ces premières investigations ne permettent pas l’intégration de l’adaptation de sortie avec la technologie actuelle bien que les résultats soient très encourageants. Les challenges technologiques de ce nouveau substrat ont mené à considérer la structure différentielle pour les amplificateurs. En plus des avantages connus de cette configuration, nous avons montré que la conception d’un amplificateur de puissance différentiel montre une amélioration importante de la bande instantanée répondant au besoin d’un débit toujours plus élevé. Cette amélioration ne dégrade pas les autres performances en gain, rendement et puissance de sortie. Dans la continuité de cette thèse, les perspectives concernent la conception d’un amplificateur de puissance sur substrat SI à haute résistivité combinée à une structure différentielle qui pourrait permettre une avancée majeure sur toutes les performances tout en gardant l’avantage du faible coût du LDMOS Silicium en comparaison des autres substrats. / This research concerns the RF power amplifiers for base stations. The current most competitive technology of RF transistor, the LDMOS, faces the constantly increasing data rate and competition from other technologies such as GaN HEMT. Another challenge is the integration of the output matching made outside of the package which is not compatible with future standards combining up to sixty-four power amplifiers close to each other. A first track proposed in this thesis is the high resistivity Si substrate. From simulations and measurements on wafers, improved passive elements quality factor has been demonstrated but these initial investigations do not allow the integration of the output matching with the current technology, although the results are very encouraging. The technological challenges of this new substrate led to consider the differential structure for amplifiers. Besides to the known advantages of this configuration, we have shown that the design of a differential power amplifier shows a significant improvement in the instantaneous band width meeting the need for higher data rate. This improvement does not degrade other performance as gain, efficiency and output power. In continuation of this thesis, the perspective concerns the design of a power amplifier on a high resistivity Si substrate combined with a differential structure that could enable a major advance over all performance while keeping the advantage of low cost of LDMOS silicon compared to other substrates.

Rapid advancement in wireless communications over the years has been the driving force for many novel technologies providing compact and low cost solutions. Recent development of multilayer coplanar waveguide (CPW) MMIC technology promises realization of 3D MMIC in which large area-occupying passive components are translated from horizontal into vertical configuration resulting compact structure. The other main advantages of this technology are elimination of via-holes and wafer-thinning giving alternative performance solution, if not better, from the traditional MMIC. In this thesis, thermal and small-signal characteristics of prefabricated AlGaAs/InGaAs pseudomorphic high electron mobility transistors (pHEMTs) on semi-insulating (S.I.) GaAs substrate incorporated in the 3D MMIC technology have been analysed and modelled for the first time. A comprehensive small-signal parameter extraction procedure has been successfully developed which automatically determines the device small-signal parameters directly from the measured S-parameters. The developed procedure is unique since it provides a great deal of data on measured devices over a wide bias, temperature and frequency range for future incorporation of different active devices for the 3D MMIC technology and provides a first hand knowledge of how the multilayer structure will affect the performance of pre-fabricated pHEMTs. The extracted small-signal models of both pre- and post- multilayer processed pHEMTs have been compared and validated to the RF S-parameters measurements. The main focus was drawn upon the temperature dependent model parameters and how the underlying physics of the transistors behave in response to the change of temperature. These novel insights are especially valuable for devices designed specifically for high power applications like power amplifiers where tremendous heat could be generated. The data can also be interpreted as a way to optimise the multilayer structure, for example, alternative material with different properties can be implemented. The governing physics affecting device performance are also modelled and discussed empirically in details through extracted device parameters. These investigations would assist in the development of reliable, efficient and low cost production of future compact 3D multilayer CPW MMICs.

L’augmentation du nombre d’appareils communicants et du débit de données a pour conséquence une montée en fréquence des dispositifs micro-ondes, notamment dans le secteur du spatial. L’optimisation des modules existants n’est pas toujours suffisante. Il faut donc synthétiser de nouveaux circuits. Cependant, la plupart des méthodes de synthèse existantes, inclues dans les logiciels de CAO, ne prennent pas en compte les modèles à pertes des fondeurs. Or, plus la fréquence de fonctionnement est élevée, plus leurs prises en compte est indispensable. Cette thèse propose une nouvelle méthode de synthèse et de conception pour les circuits faible bruit intégrés (amplificateur faible bruit et mélangeur). Elle prend en compte les modèles à pertes des composants passifs des fondeurs, les lignes de connexion, les jonctions et elle combine plusieurs fonctions comme l’amplification et le filtrage ainsi que le mélange et le filtrage. Elle a été validée en simulation et en mesure. / Due to the evolution of wireless systems and data rate, it is necessary to increase microwave operating frequencies, especially in space industry. Optimization of existing circuit topologies are always not enough and therefore, we need to synthetize new circuits. Unfortunately, most of the existing synthesis methods, including in CAD softwares, are only based on lossless passive component models. With the increase of operating frequency, we need to take the effect of losses in the passive component models during synthesis. This thesis introduces a new synthesis and design method for low noise integrated circuits(low noise amplifier and mixer). Lossy passive component models from foundries, connecting wires, junctions and co-design (amplification and filtering or mixing and filtering)are included. The design procedure was validated by simulations and measurements.

Prior research focused on CMOS-MEMS integrated oscillator has been done using various foundry compatible integration techniques. In order to compensate the integration compatibility, MEMS resonators built on standard CMOS foundry process could not take full advantage of highest achievable quality factor on chip. System-in-package (SiP) and system-on-chip (SoC) is becoming the next generation of electronic packaging due to the need of multi-functional devices and multi-sensor systems, thus wafer level hybrid integration becomes the key to enable the full assembly of dissimilar devices. In this way, every active circuit and passive component can be individually optimized, so do the MEMS resonators and sustaining amplifier circuits. In this dissertation, GaAs-MEMS integrated oscillator in a hybrid packaging has been fully explored as an important functional block in the RF transceiver systems. This dissertation first presents design, micro-fabrication, simulation, testing and modeling of ZnO piezoelectrically-transduced MEMS resonators. A newly designed rectangular plate with curved resonator body fabricated in-house exhibits a very high Q of more 6,000 in the air for its width-extensional mode resonance at 166 MHz. In addition, a rectangular plate resonator with multiple Phononic Crystal (PC) strip tethers shows low insertion loss of -11.5 dB at 473.9 MHz with a Q of 2722.5 in the air. An oscillator technology with high-Q MEMS resonator as its tank circuit is presented to validate its key functionality as a stable frequency reference across a wide spectrum of frequencies. Particularly, a piezoelectrically-transduced width-extensional mode MEMS resonator is strategically designed to operate at two distinct layout-defined mechanical modal frequencies (259.5MHz and 436.7MHz). These devices were characterized and modeled by an extracted equivalent LCR circuit to facilitate the design of the oscillator using a standard circuit simulator. MEMS resonators have been integrated with the sustaining amplifier circuit at PCB level using wire-bonding technique and coaxial connectors. As shown by the time-domain measurements and frequency-domain measurements, these oscillators are capable of selectively locking into the resonance frequency of the tank circuit and generating a stable sinusoidal waveform. Meanwhile, the phase noise performance is rigorously investigated within a few oscillator designs. At last, 3-D printed hybrid packaging using additive manufacturing and laser machining technique has been developed for integrating a MEMS resonator on a silicon-on-insulator (SOI) substrate and a GaAs sustaining amplifier. Fabrication process and fundamental characterization of this hybrid packaging has been demonstrated. On-wafer probe measurements of a 50 Ω microstrip line on ABS substrate exhibit its insertion loss of 0.028 dB/mm at 5 GHz, 0.187 dB/mm at 20 GHz and 0.512 dB/mm at 30 GHz, and show satisfactory input and output return loss with the 3-D printed package. Parylene N is also experimentally coated on the package for improving water resistance as a form of hermetic packaging.

<p>Acreo AB has developed a radar prototype used for illustrate how the SiGe technology could be used. The radar prototype needs further development with a fast interface and a more integrated design. The beginning of the report describes the radar technique theory and the composing equations. The theoretical background is used to explain each component of the system. The report continues by specifying the target of the next radar prototype. The chosen implementation is motivated and the mode of procedure is described in detail. Test benches were used to verify correct functionality and some limits were found. The report is concluded with test results and recommendations on further enhancements.</p> / <p>Acreo AB har utvecklat en radarprototyp för att illustrera hur SiGe teknologi kan användas. Prototypen behöver vidareutvecklas med ett snabbt digitalt interface och en kompaktare design. Rapporten inleds med att beskriva radarteknikens funktionalitet och de utgörande ekvationerna. Den teoretiska bakgrunden används för att förklara varje komponent som systemet utgörs av. Rapporten fortsätter med att specificera målet med nästa radarprototyp. Den valda implementationen motiveras och tillvägagångssättet beskrivs detaljerat. Testuppkopplingar verifierade korrekt funktionalitet och begränsningar insågs. Rapporten avslutas med en sammanfattning av uppnådda testresultat och rekommendationer på framtida förbättringar.</p>

The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive components fabricated in SOI technologies have been studied, and a physical model of integrated square spiral inductors has been developed. Also, the performances of integrated MOSFETs have been analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) have been proposed and studied from Low to High frequencies. These transistors show very interesting properties for analog, low power, low voltage, and microwave applications. Furthermore, as their fabrication processes are fully CMOS compatible, they allow us to increase the performances of a CMOS technology without any modification of its process, and without extra-cost.

The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive components fabricated in SOI technologies have been studied, and a physical model of integrated square spiral inductors has been developed. Also, the performances of integrated MOSFETs have been analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) have been proposed and studied from Low to High frequencies. These transistors show very interesting properties for analog, low power, low voltage, and microwave applications. Furthermore, as their fabrication processes are fully CMOS compatible, they allow us to increase the performances of a CMOS technology without any modification of its process, and without extra-cost.

Acreo AB has developed a radar prototype used for illustrate how the SiGe technology could be used. The radar prototype needs further development with a fast interface and a more integrated design. The beginning of the report describes the radar technique theory and the composing equations. The theoretical background is used to explain each component of the system. The report continues by specifying the target of the next radar prototype. The chosen implementation is motivated and the mode of procedure is described in detail. Test benches were used to verify correct functionality and some limits were found. The report is concluded with test results and recommendations on further enhancements. / Acreo AB har utvecklat en radarprototyp för att illustrera hur SiGe teknologi kan användas. Prototypen behöver vidareutvecklas med ett snabbt digitalt interface och en kompaktare design. Rapporten inleds med att beskriva radarteknikens funktionalitet och de utgörande ekvationerna. Den teoretiska bakgrunden används för att förklara varje komponent som systemet utgörs av. Rapporten fortsätter med att specificera målet med nästa radarprototyp. Den valda implementationen motiveras och tillvägagångssättet beskrivs detaljerat. Testuppkopplingar verifierade korrekt funktionalitet och begränsningar insågs. Rapporten avslutas med en sammanfattning av uppnådda testresultat och rekommendationer på framtida förbättringar.

For millimeter wave applications, MMIC is the best contemporary technology. Considering the requirements of the commercial and military applications on amplitude and phase linearity, it is necessary to reduce the nonlinearity of the amplifiers. There are several linearization techniques that are used to reduce the nonlinearity effects. In the context of the thesis, a special analog predistortion technique that is called &ldquo / self cancellation scheme&rdquo / is used to linearize a 35GHz MMIC amplifier. The amplifier to be linearized is used in the design of the predistorter, that is why it is called self cancellation. This thesis contain the design of the amplifier, lumped element power divider and combiner circuits, and the complete analog predistortion linearizer. Layouts of linearizer system and its components are prepared and layout effects are taken into account.